JP7432620B2 - Euv用パターン化レジストの形成方法 - Google Patents
Euv用パターン化レジストの形成方法 Download PDFInfo
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- JP7432620B2 JP7432620B2 JP2021568866A JP2021568866A JP7432620B2 JP 7432620 B2 JP7432620 B2 JP 7432620B2 JP 2021568866 A JP2021568866 A JP 2021568866A JP 2021568866 A JP2021568866 A JP 2021568866A JP 7432620 B2 JP7432620 B2 JP 7432620B2
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- 238000000034 method Methods 0.000 title claims description 51
- -1 ester compound Chemical class 0.000 claims description 161
- 239000002253 acid Substances 0.000 claims description 60
- 239000000203 mixture Substances 0.000 claims description 47
- 125000000524 functional group Chemical group 0.000 claims description 25
- 229920000642 polymer Polymers 0.000 claims description 24
- 125000006239 protecting group Chemical group 0.000 claims description 21
- 239000004971 Cross linker Substances 0.000 claims description 20
- 150000001875 compounds Chemical class 0.000 claims description 19
- 239000000178 monomer Substances 0.000 claims description 14
- 239000003431 cross linking reagent Substances 0.000 claims description 13
- 239000002904 solvent Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 12
- 125000004184 methoxymethyl group Chemical group [H]C([H])([H])OC([H])([H])* 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 11
- 125000003118 aryl group Chemical group 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 10
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- 125000002777 acetyl group Chemical class [H]C([H])([H])C(*)=O 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims description 7
- 229920005989 resin Polymers 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 7
- 125000000217 alkyl group Chemical group 0.000 claims description 6
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 claims description 6
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- 125000005745 ethoxymethyl group Chemical group [H]C([H])([H])C([H])([H])OC([H])([H])* 0.000 claims description 5
- 229910052736 halogen Inorganic materials 0.000 claims description 5
- 150000002367 halogens Chemical class 0.000 claims description 5
- 125000001072 heteroaryl group Chemical group 0.000 claims description 5
- YXHKONLOYHBTNS-UHFFFAOYSA-N Diazomethane Chemical compound C=[N+]=[N-] YXHKONLOYHBTNS-UHFFFAOYSA-N 0.000 claims description 4
- JHRWWRDRBPCWTF-OLQVQODUSA-N captafol Chemical compound C1C=CC[C@H]2C(=O)N(SC(Cl)(Cl)C(Cl)Cl)C(=O)[C@H]21 JHRWWRDRBPCWTF-OLQVQODUSA-N 0.000 claims description 4
- 125000006222 dimethylaminomethyl group Chemical group [H]C([H])([H])N(C([H])([H])[H])C([H])([H])* 0.000 claims description 4
- 125000002485 formyl group Chemical group [H]C(*)=O 0.000 claims description 4
- 125000000555 isopropenyl group Chemical group [H]\C([H])=C(\*)C([H])([H])[H] 0.000 claims description 4
- 125000001064 morpholinomethyl group Chemical group [H]C([H])(*)N1C([H])([H])C([H])([H])OC([H])([H])C1([H])[H] 0.000 claims description 4
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 4
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical compound [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 claims description 3
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 3
- 125000001931 aliphatic group Chemical group 0.000 claims description 3
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical class I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims description 3
- AHHWIHXENZJRFG-UHFFFAOYSA-N oxetane Chemical compound C1COC1 AHHWIHXENZJRFG-UHFFFAOYSA-N 0.000 claims description 3
- AFEQENGXSMURHA-UHFFFAOYSA-N oxiran-2-ylmethanamine Chemical compound NCC1CO1 AFEQENGXSMURHA-UHFFFAOYSA-N 0.000 claims description 3
- 150000003457 sulfones Chemical class 0.000 claims description 3
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 claims description 2
- 125000002723 alicyclic group Chemical group 0.000 claims description 2
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- 125000000753 cycloalkyl group Chemical group 0.000 claims description 2
- CSYSRRCOBYEGPI-UHFFFAOYSA-N diazo(sulfonyl)methane Chemical compound [N-]=[N+]=C=S(=O)=O CSYSRRCOBYEGPI-UHFFFAOYSA-N 0.000 claims description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 2
- WLOQLWBIJZDHET-UHFFFAOYSA-N triphenylsulfonium Chemical class C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 WLOQLWBIJZDHET-UHFFFAOYSA-N 0.000 claims description 2
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- 125000005842 heteroatom Chemical group 0.000 claims 1
- 125000005931 tert-butyloxycarbonyl group Chemical group [H]C([H])([H])C(OC(*)=O)(C([H])([H])[H])C([H])([H])[H] 0.000 claims 1
- 239000000463 material Substances 0.000 description 34
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- 239000004593 Epoxy Substances 0.000 description 24
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 17
- 238000006243 chemical reaction Methods 0.000 description 13
- 238000009472 formulation Methods 0.000 description 13
- 230000035945 sensitivity Effects 0.000 description 13
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 12
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- 229920000647 polyepoxide Polymers 0.000 description 12
- 125000003700 epoxy group Chemical group 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 125000002057 carboxymethyl group Chemical group [H]OC(=O)C([H])([H])[*] 0.000 description 8
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 7
- 238000002329 infrared spectrum Methods 0.000 description 7
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- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 6
- 238000004132 cross linking Methods 0.000 description 6
- 238000011161 development Methods 0.000 description 6
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
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- 230000005012 migration Effects 0.000 description 5
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- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 150000007513 acids Chemical class 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 125000004183 alkoxy alkyl group Chemical group 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 4
- 238000001459 lithography Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- GPIUUMROPXDNRH-UHFFFAOYSA-N 3647-74-3 Chemical compound C1C2C3C(=O)NC(=O)C3C1C=C2 GPIUUMROPXDNRH-UHFFFAOYSA-N 0.000 description 3
- GZVHEAJQGPRDLQ-UHFFFAOYSA-N 6-phenyl-1,3,5-triazine-2,4-diamine Chemical class NC1=NC(N)=NC(C=2C=CC=CC=2)=N1 GZVHEAJQGPRDLQ-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
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- 229940079877 pyrogallol Drugs 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 241000894007 species Species 0.000 description 3
- 125000005409 triarylsulfonium group Chemical group 0.000 description 3
- 150000003672 ureas Chemical class 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- WDKXCMCPUBYZBF-UHFFFAOYSA-N (2,5-dioxo-3,4-diphenylpyrrol-1-yl) 2-(trifluoromethyl)benzenesulfonate Chemical compound FC(F)(F)C1=CC=CC=C1S(=O)(=O)ON1C(=O)C(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)C1=O WDKXCMCPUBYZBF-UHFFFAOYSA-N 0.000 description 2
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 2
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- CPEXFJVZFNYXGU-UHFFFAOYSA-N 2,4,6-trihydroxybenzophenone Chemical compound OC1=CC(O)=CC(O)=C1C(=O)C1=CC=CC=C1 CPEXFJVZFNYXGU-UHFFFAOYSA-N 0.000 description 2
- OJVAMHKKJGICOG-UHFFFAOYSA-N 2,5-hexanedione Chemical compound CC(=O)CCC(C)=O OJVAMHKKJGICOG-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- BNCADMBVWNPPIZ-UHFFFAOYSA-N 2-n,2-n,4-n,4-n,6-n,6-n-hexakis(methoxymethyl)-1,3,5-triazine-2,4,6-triamine Chemical compound COCN(COC)C1=NC(N(COC)COC)=NC(N(COC)COC)=N1 BNCADMBVWNPPIZ-UHFFFAOYSA-N 0.000 description 2
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- PLIKAWJENQZMHA-UHFFFAOYSA-N 4-aminophenol Chemical compound NC1=CC=C(O)C=C1 PLIKAWJENQZMHA-UHFFFAOYSA-N 0.000 description 2
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XZMCDFZZKTWFGF-UHFFFAOYSA-N Cyanamide Chemical compound NC#N XZMCDFZZKTWFGF-UHFFFAOYSA-N 0.000 description 2
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
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- 238000010894 electron beam technology Methods 0.000 description 2
- 238000001803 electron scattering Methods 0.000 description 2
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- 230000006870 function Effects 0.000 description 2
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- VPVSTMAPERLKKM-UHFFFAOYSA-N glycoluril Chemical class N1C(=O)NC2NC(=O)NC21 VPVSTMAPERLKKM-UHFFFAOYSA-N 0.000 description 2
- 125000001188 haloalkyl group Chemical group 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
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- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
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- KZNICNPSHKQLFF-UHFFFAOYSA-N succinimide Chemical compound O=C1CCC(=O)N1 KZNICNPSHKQLFF-UHFFFAOYSA-N 0.000 description 2
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- KFMMMYHKGPIRON-UHFFFAOYSA-N (1,3-dioxo-3a,4,7,7a-tetrahydro-octahydro-1h-4,7-epoxyisoindol-2-yl) trifluoromethanesulfonate Chemical compound C1=CC2OC1C1C2C(=O)N(OS(=O)(=O)C(F)(F)F)C1=O KFMMMYHKGPIRON-UHFFFAOYSA-N 0.000 description 1
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- FLBURFVEHMDJPO-UHFFFAOYSA-N (1,3-dioxoisoindol-2-yl) 2-(trifluoromethyl)benzenesulfonate Chemical compound FC(F)(F)C1=CC=CC=C1S(=O)(=O)ON1C(=O)C2=CC=CC=C2C1=O FLBURFVEHMDJPO-UHFFFAOYSA-N 0.000 description 1
- YBZYOFPXWKUXEX-UHFFFAOYSA-N (1,3-dioxoisoindol-2-yl) 4-fluorobenzenesulfonate Chemical compound C1=CC(F)=CC=C1S(=O)(=O)ON1C(=O)C2=CC=CC=C2C1=O YBZYOFPXWKUXEX-UHFFFAOYSA-N 0.000 description 1
- MMZCYVBYIOUFEO-UHFFFAOYSA-N (1,3-dioxoisoindol-2-yl) 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)ON1C(=O)C2=CC=CC=C2C1=O MMZCYVBYIOUFEO-UHFFFAOYSA-N 0.000 description 1
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- 238000002164 ion-beam lithography Methods 0.000 description 1
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- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 125000005928 isopropyloxycarbonyl group Chemical group [H]C([H])([H])C([H])(OC(*)=O)C([H])([H])[H] 0.000 description 1
- 150000003903 lactic acid esters Chemical class 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 125000000400 lauroyl group Chemical group O=C([*])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 125000003099 maleoyl group Chemical group C(\C=C/C(=O)*)(=O)* 0.000 description 1
- 125000000346 malonyl group Chemical group C(CC(=O)*)(=O)* 0.000 description 1
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- 125000004092 methylthiomethyl group Chemical group [H]C([H])([H])SC([H])([H])* 0.000 description 1
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- 239000011733 molybdenum Substances 0.000 description 1
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- 125000001038 naphthoyl group Chemical group C1(=CC=CC2=CC=CC=C12)C(=O)* 0.000 description 1
- 125000004957 naphthylene group Chemical group 0.000 description 1
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- 239000010955 niobium Substances 0.000 description 1
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- 125000006502 nitrobenzyl group Chemical group 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- 229910052755 nonmetal Inorganic materials 0.000 description 1
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- 238000003199 nucleic acid amplification method Methods 0.000 description 1
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- AUBNVERMHFAAKM-UHFFFAOYSA-M octane-1-sulfonate;triphenylsulfanium Chemical class CCCCCCCCS([O-])(=O)=O.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 AUBNVERMHFAAKM-UHFFFAOYSA-M 0.000 description 1
- 125000002811 oleoyl group Chemical group O=C([*])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])/C([H])=C([H])\C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 description 1
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- 235000006408 oxalic acid Nutrition 0.000 description 1
- 125000003452 oxalyl group Chemical group *C(=O)C(*)=O 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
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- 230000000737 periodic effect Effects 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 description 1
- 150000004714 phosphonium salts Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- XKJCHHZQLQNZHY-UHFFFAOYSA-N phthalimide Chemical compound C1=CC=C2C(=O)NC(=O)C2=C1 XKJCHHZQLQNZHY-UHFFFAOYSA-N 0.000 description 1
- 125000000612 phthaloyl group Chemical group C(C=1C(C(=O)*)=CC=CC1)(=O)* 0.000 description 1
- 125000004591 piperonyl group Chemical group C(C1=CC=2OCOC2C=C1)* 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052699 polonium Inorganic materials 0.000 description 1
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- 230000002250 progressing effect Effects 0.000 description 1
- NLDFTWSUPLJCQD-UHFFFAOYSA-N prop-1-en-2-yl propanoate Chemical compound CCC(=O)OC(C)=C NLDFTWSUPLJCQD-UHFFFAOYSA-N 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 125000001501 propionyl group Chemical group O=C([*])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229940090181 propyl acetate Drugs 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
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- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
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- 150000003254 radicals Chemical class 0.000 description 1
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- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
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- 238000007761 roller coating Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 125000003548 sec-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
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- 229910052709 silver Inorganic materials 0.000 description 1
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- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- 125000003696 stearoyl group Chemical group O=C([*])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 229960002317 succinimide Drugs 0.000 description 1
- 125000002730 succinyl group Chemical group C(CCC(=O)*)(=O)* 0.000 description 1
- 150000003459 sulfonic acid esters Chemical class 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052713 technetium Inorganic materials 0.000 description 1
- GKLVYJBZJHMRIY-UHFFFAOYSA-N technetium atom Chemical compound [Tc] GKLVYJBZJHMRIY-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 125000001973 tert-pentyl group Chemical group [H]C([H])([H])C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 125000003718 tetrahydrofuranyl group Chemical group 0.000 description 1
- 125000001412 tetrahydropyranyl group Chemical group 0.000 description 1
- 125000004632 tetrahydrothiopyranyl group Chemical group S1C(CCCC1)* 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 125000005147 toluenesulfonyl group Chemical group C=1(C(=CC=CC1)S(=O)(=O)*)C 0.000 description 1
- 125000005425 toluyl group Chemical group 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- CLUKQZWNNHBNCR-UHFFFAOYSA-N trifluoromethanesulfonate;tris(4-hydroxyphenyl)sulfanium Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC(O)=CC=C1[S+](C=1C=CC(O)=CC=1)C1=CC=C(O)C=C1 CLUKQZWNNHBNCR-UHFFFAOYSA-N 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 125000000025 triisopropylsilyl group Chemical group C(C)(C)[Si](C(C)C)(C(C)C)* 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 1
- 125000002221 trityl group Chemical group [H]C1=C([H])C([H])=C([H])C([H])=C1C([*])(C1=C(C(=C(C(=C1[H])[H])[H])[H])[H])C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
- 125000003774 valeryl group Chemical group O=C([*])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
Description
本出願は、「増強されたEUVフォトレジスト材料、配合物およびプロセス」と題する、2018年2月24日に出願の米国仮特許出願第62/634,827号の35USCセクション119(e)に基づく優先権の利益を主張し、その内容のすべてを本出願明細書中に参照により援用する。
従来の化学増幅型レジスト(CAR)材料は、このニーズを満たすための試行錯誤がなされ延命してきたが、解像度の向上により感度が大幅に低下し、たとえば、サイズあたりのCARの線量の典型量は14nmハーフピッチ(hp)で30~40mJ/cm2の範囲になってしまう。EUV光子の吸収を高めるために、金属系のレジスト材料が徹底的に検討されてきたが、一方で金属レジスト一本化に対する業界の懸念を和らげ、Fabに優しいプロセスを提供する大事な作業が進められている。16nmハーフピッチで25mJ/cm2未満、13nmhpで35mJ/cm2未満の線量が報告されている。RLS問題に対処するため、業界では、ますます新しいアプローチと抜本的な化学的手法が求められる。従来の化学増幅レジストに金属添加剤を加えて光学密度を高めようとする研究によれば、22nmのハーフピッチを有するコンタクトホールにおけるコンタクトホールのパターニング感度が、50から43mJ/cm2に向上することが示されているが、一方でホールサイズのばらつきの大きさが犠牲となる。PSCARプロセスと言って、初期のEUV露光を介し、フラッドUVを使って酸の生成を増幅するプロセスでは、18nmのhpで30mJ/cm2から17mJ/cm2という線量要件に対して大幅な減少が見られたが、露光許容範囲の大幅な削減とLWRも併せて報告された。
-(アルキル)j-(アリール)k-(O)p-(COO)q-LG
を含む(式中、j、k、p、およびqは図1の表に記載される値をとり、ここで、アルキル基は、鎖中に置換された0~16個の複素原子を有する1~16個の炭素原子を有する、分岐または非分岐、置換または非置換の二価のアルキル鎖であり、アリール基は、置換または非置換の二価のフェニル基、二価の複素芳香族基、または二価の縮合芳香族または縮合複素芳香族基であり、そしてLGが第三級アルキルまたは第三級シクロアルキル基、脂環式基、ケタールまたは環状脂肪族ケタールであり、またはアセタールは脱離基である。
実施例で使用した材料を図9に示す。
図9のxMT分子樹脂化合物を、分子架橋剤および乳酸エチル中の光酸発生剤と0.2:2:1の重量比で混合した。この組成物をカーボンコートされた自前のシリコンウェーハ上にスピンコーティングし、ホットプレート上で75℃、5分間加熱して、約25nmのフィルムを得た。次に、コーティング後のウエハーを、13~14nm波長のシンクロトロン系EUV光により画像様に露光し、露光後、90℃で3分間ベークした。未露光領域をモノクロロベンゼンとイソプロピルアルコールの50:50ブレンドで20秒間パドル現像した後に、イソプロピルアルコールでリンスすることによって除去した。未露光領域をモノクロロベンゼンとイソプロピルアルコールの50:50ブレンドで20秒間パドル現像した後に、イソプロピルアルコールでリンスすることによって除去した。
組成物1に2.5%消光剤を加えて使用した。
LWRが約3nm未満の市販の材料はほとんどないので、より高感度のフォトレジストを開発する必要がある。たとえば、ほとんどの市販のフォトレジストシステムでは、適切なコンタクトホールを印刷するために35~40mJ/cm2が必要となる(使用可能なプロセスウィンドウを採用)。
Claims (5)
- パターン化レジストを形成する方法であって、以下の工程:
a.基板を準備する工程、
b.
i.少なくとも一種のエステル化合物であって、2つ以上の架橋性官能基を含み、前記架橋性官能基の少なくとも90%が酸不安定保護基に結合している、少なくとも一種のエステル化合物、
ii.少なくとも一種の酸活性化架橋剤、
iii.少なくとも一種の光酸発生剤、および
iv.少なくとも一種の溶媒、を含む、
追加の酸拡散制御成分を含まない複合トリガーレジスト組成物を塗工する工程、
c.前記塗工後の基板を加熱して実質的に乾燥した塗布体を形成し、所望の厚さにする工程、
d.前記塗工後の基板を化学線により画像様に露光する工程、
e.溶媒現像剤を使用して、前記塗布体の未露光領域を除去する工程であって、残りの光画像化パターンは、前記塗布体の前記未露光領域を除去した後に、加熱される工程、
を含み、
前記d.の工程と前記e.の工程の間には、露光された前記基板を加熱する工程を含まず、
前記エステル化合物が、以下の構造のうち1つの化合物を含む、レジストの形成方法:
- 少なくとも1つの光酸発生剤が、極端紫外線により露光された場合に酸を生成することができる、オニウム塩化合物、スルホニウム塩、トリフェニルスルホニウム塩、スルホンイミド、ハロゲン含有化合物、スルホン、スルホンイミド、スルホン酸エステル、キノンジアジド、ジアゾメタン、ヨードニウム塩、オキシムスルホネート、ジカルボキシイミジルサルフェートエステル、イリデンアミノオキシスルホン酸エステル、スルホニルジアゾメタン、またはそれらの混合物である、請求項1に記載の方法。
- 前記少なくとも1つの酸活性化架橋剤が、グリシジルエーテル、グリシジルエステル、オキセタン、グリシジルアミン、メトキシメチル基、エトキシメチル基、ブトキシメチル基、ベンジルオキシメチル基、ジメチルアミノメチル基、ジエチルアミノメチルアミノ基、ジアルキロールメチルアミノ基、ジブトキシメチルアミノ基、ジメチロールメチルアミノ基、ジエチロールメチルアミノ基、ジブチロールメチルアミノ基、モルホリノメチル基、アセトキシメチル基、ベンジルオキシメチル基、ホルミル基、アセチル基、ビニル基またはイソプロペニル基のうちの少なくとも1つを含む、脂肪族、芳香族またはアラルキルモノマー、オリゴマー、樹脂またはポリマーを含む、請求項1に記載の方法。
- 前記酸不安定保護基がtert-ブトキシカルボニル基を含む、請求項1に記載の方法。
- 前記少なくとも1つの酸活性化架橋剤が、グリシジルエーテル、グリシジルエステル、オキセタン、グリシジルアミン、メトキシメチル基、エトキシメチル基、ブトキシメチル基、ベンジルオキシメチル基、ジメチルアミノメチル基、ジエチルアミノメチルアミノ基、ジアルキロールメチルアミノ基、ジブトキシメチルアミノ基、ジメチロールメチルアミノ基、ジエチロールメチルアミノ基、ジブチロールメチルアミノ基、モルホリノメチル基、アセトキシメチル基、ベンジルオキシメチル基、ホルミル基、アセチル基、ビニル基またはイソプロペニル基のうちの少なくとも1つを含む、脂肪族、芳香族またはアラルキルモノマー、オリゴマー、樹脂またはポリマーを含む、請求項4に記載の方法。
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