JP7413086B2 - semiconductor light emitting device - Google Patents

Description

The present disclosure relates to a semiconductor light emitting device .

As an example of the semiconductor light emitting device, a chip type semiconductor light emitting device includes a semiconductor light emitting element mounted on a substrate, and a transparent sealing resin formed on the substrate and sealing the semiconductor light emitting element. A device is known (for example, see Patent Document 1). In such a semiconductor light-emitting device, the semiconductor light-emitting element has a main light-emitting surface that emits light, and for example, from the main light-emitting surface in the thickness direction of the substrate, it is directed upward, which is the direction away from the main light-emitting surface. This is a configuration in which light is emitted.

Japanese Patent Application Publication No. 2005-353914

By the way, in recent years, the intensity of light from semiconductor light emitting devices (for example, luminous intensity, illuminance, or luminance) has improved, and the light emitted upward from the main surface of the device has become stronger. The difference between the intensity of light emitted upward and the intensity of light around the semiconductor light emitting element becomes large, and the semiconductor light emitting element appears to shine locally. In other words, the range of light emitted upward from the semiconductor light emitting element appears narrow, and for example, when the semiconductor light emitting device is viewed from above, the semiconductor light emitting element appears to shine as a dot.

An object of the present disclosure is to provide a semiconductor light emitting device that can suppress the appearance of strong local light.

A semiconductor light emitting device that solves the above problem includes a substrate having a main surface and a back surface, a semiconductor light emitting element mounted on the main surface and having a light emitting main surface that emits light , and provided on the main surface, a translucent sealing resin having a main resin surface facing the same side as the main surface of the substrate and sealing the semiconductor light emitting element; The semiconductor light emitting element is arranged so as to be spaced upward from the main light emitting surface in the thickness direction of the substrate and spaced downward from the main resin surface , and the entire main light emitting surface when viewed from above. a light shielding part that covers the semiconductor light emitting element, the light shielding part having a convex part protruding toward the semiconductor light emitting element, and in a cross-sectional view of the light shielding part taken along a plane along the thickness direction, The convex portion has a first curved surface and a second curved surface that curve toward each other toward the semiconductor light emitting element, the first curved surface has a first radius of curvature, and the first curved surface has a first radius of curvature, and the first curved surface has a first radius of curvature. The second curved surface has a second radius of curvature that is smaller than the first radius of curvature of the first curved surface, and the second curved surface has a second radius of curvature smaller than the first radius of curvature of the first curved surface, and when viewed from above, a first portion of the first curved surface that overlaps with the semiconductor light emitting element. The length is longer than the length of a second portion of the second curved surface that overlaps with the semiconductor light emitting element .

According to this configuration, the light shielding portion that covers at least a part of the light emitting main surface of the semiconductor light emitting element when viewed from above blocks the light emitted from the light emitting main surface, and therefore the light emitted upward from the light emitting main surface. strength becomes weaker. Therefore, the difference between the intensity of light emitted upward from the main light-emitting surface and the intensity of light around the semiconductor light-emitting element becomes small, so when the semiconductor light-emitting device is viewed from above, it appears that it is glowing locally. It can be suppressed. Additionally, the intensity of the light emitted to the surroundings can be changed.

A method for manufacturing a semiconductor light emitting device that solves the above problems includes the steps of preparing a substrate having a main surface and a back surface facing oppositely to each other in the thickness direction, and a semiconductor light emitting element having a light emitting main surface that emits light. a step of mounting the semiconductor light emitting element on a surface; The method includes a step of arranging a light shielding part so as to cover the semiconductor light emitting element, and a step of forming a transparent resin layer for sealing the semiconductor light emitting element.

According to this configuration, the light shielding portion that covers at least a part of the light emitting main surface of the semiconductor light emitting element when viewed from above blocks the light emitted from the light emitting main surface, and therefore the light emitted upward from the light emitting main surface. strength becomes weaker. Therefore, the difference between the intensity of light emitted upward from the main light-emitting surface and the intensity of light around the semiconductor light-emitting element becomes small, so when the semiconductor light-emitting device is viewed from above, it appears that it is glowing locally. It can be suppressed.

A method for manufacturing a semiconductor light emitting device that solves the above problems includes the steps of preparing a substrate having a main surface and a back surface facing oppositely to each other in the thickness direction, and a semiconductor light emitting element having a light emitting main surface that emits light. a step of mounting on a surface, a step of forming a first resin layer for sealing the semiconductor light emitting element, and a step of providing a light shielding part covering at least a part of the main light emitting surface on the first resin layer. and a step of forming a second resin layer that seals the light shielding part.

According to this configuration, the light shielding portion that covers at least a part of the light emitting main surface of the semiconductor light emitting element when viewed from above blocks the light emitted from the light emitting main surface, and therefore the light emitted upward from the light emitting main surface. strength becomes weaker. Therefore, the difference between the intensity of light emitted upward from the main light-emitting surface and the intensity of light around the semiconductor light-emitting element becomes small, so when the semiconductor light-emitting device is viewed from above, it appears that it is glowing locally. It can be suppressed.

According to the semiconductor light emitting device described above, it is possible to suppress the appearance of strong local light.

FIG. 1 is a perspective view of a semiconductor light emitting device according to a first embodiment. 2 is a side view of the semiconductor light emitting device of FIG. 1. FIG. 2 is a plan view of the semiconductor light emitting device of FIG. 1. FIG. 2 is a back view of the semiconductor light emitting device of FIG. 1. FIG. FIG. 4 is an enlarged view of a semiconductor light emitting element and its surroundings in a state in which a sealing resin and a light shielding unit are removed from the semiconductor light emitting device of FIG. 3; FIG. 4 is a sectional view taken along line 6-6 in FIG. 3. A sectional view taken along line 7-7 in FIG. 3. FIG. 2 is an explanatory diagram showing an example of a manufacturing process in the method for manufacturing the semiconductor light emitting device of the first embodiment. FIG. 2 is an explanatory diagram showing an example of a manufacturing process in a method for manufacturing a semiconductor light emitting device. FIG. 2 is an explanatory diagram showing an example of a manufacturing process in a method for manufacturing a semiconductor light emitting device. FIG. 2 is an explanatory diagram showing an example of a manufacturing process in a method for manufacturing a semiconductor light emitting device. FIG. 2 is an explanatory diagram showing an example of a manufacturing process in a method for manufacturing a semiconductor light emitting device. FIG. 2 is an explanatory diagram showing an example of a manufacturing process in a method for manufacturing a semiconductor light emitting device. FIG. 3 is a plan view of a light-shielding unit holder in a method of manufacturing a semiconductor light-emitting device. FIG. 2 is an explanatory diagram showing an example of a manufacturing process in a method for manufacturing a semiconductor light emitting device. FIG. 16 is a sectional view taken along line 16-16 in FIG. 15. FIG. 2 is an explanatory diagram showing an example of a manufacturing process in a method for manufacturing a semiconductor light emitting device. FIG. 2 is an explanatory diagram showing an example of a manufacturing process in a method for manufacturing a semiconductor light emitting device. 3 is an enlarged view of a portion of the semiconductor light emitting device of FIG. 2. FIG. 2 is an enlarged view of a portion of the semiconductor light emitting device in a side structure of the semiconductor light emitting device in FIG. 1 viewed from a direction different from that in FIG. 2. FIG. FIG. 3 is a side view of a semiconductor light emitting device according to a second embodiment. FIG. 22 is a plan view of the semiconductor light emitting device of FIG. 21. 22 is an enlarged view of the semiconductor light emitting element and its surroundings in the cross-sectional structure of the semiconductor light emitting device of FIG. 21. FIG. FIG. 7 is an explanatory diagram showing an example of a manufacturing process in a method for manufacturing a semiconductor light emitting device according to a second embodiment. FIG. 2 is an explanatory diagram showing an example of a manufacturing process in a method for manufacturing a semiconductor light emitting device. FIG. 2 is an explanatory diagram showing an example of a manufacturing process in a method for manufacturing a semiconductor light emitting device. FIG. 2 is an explanatory diagram showing an example of a manufacturing process in a method for manufacturing a semiconductor light emitting device. FIG. 2 is an explanatory diagram showing an example of a manufacturing process in a method for manufacturing a semiconductor light emitting device. FIG. 2 is an explanatory diagram showing an example of a manufacturing process in a method for manufacturing a semiconductor light emitting device. FIG. 2 is an explanatory diagram showing an example of a manufacturing process in a method for manufacturing a semiconductor light emitting device. FIG. 7 is a plan view of a semiconductor light emitting device according to a third embodiment. 32 is a back view of the semiconductor light emitting device of FIG. 31. FIG. 32 is an enlarged view of a portion of the semiconductor light emitting device of FIG. 31. FIG. FIG. 32 is a sectional view taken along line 34-34 in FIG. 31. FIG. 32 is a sectional view taken along line 35-35 in FIG. 31. FIG. 32 is a sectional view taken along line 36-36 in FIG. 31. FIG. 7 is an explanatory diagram showing an example of a manufacturing process in a method for manufacturing a semiconductor light emitting device according to a third embodiment. FIG. 2 is an explanatory diagram showing an example of a manufacturing process in a method for manufacturing a semiconductor light emitting device. FIG. 2 is an explanatory diagram showing an example of a manufacturing process in a method for manufacturing a semiconductor light emitting device. FIG. 2 is an explanatory diagram showing an example of a manufacturing process in a method for manufacturing a semiconductor light emitting device. FIG. 2 is an explanatory diagram showing an example of a manufacturing process in a method for manufacturing a semiconductor light emitting device. FIG. 2 is an explanatory diagram showing an example of a manufacturing process in a method for manufacturing a semiconductor light emitting device. FIG. 2 is an explanatory diagram showing an example of a manufacturing process in a method for manufacturing a semiconductor light emitting device. FIG. 2 is an explanatory diagram showing an example of a manufacturing process in a method for manufacturing a semiconductor light emitting device. FIG. 2 is an explanatory diagram showing an example of a manufacturing process in a method for manufacturing a semiconductor light emitting device. The side view which expanded the semiconductor light emitting element and its surroundings about the semiconductor light emitting device of a modification. The side view which expanded the semiconductor light emitting element and its surroundings about the semiconductor light emitting device of a modification. The side view which expanded the semiconductor light emitting element and its surroundings about the semiconductor light emitting device of a modification. FIG. 7 is an enlarged plan view of a semiconductor light emitting element and its surroundings in a semiconductor light emitting device of a modified example. The side view which expanded the semiconductor light emitting element and its surroundings about the semiconductor light emitting device of a modification. FIG. 7 is an enlarged side view of a semiconductor light emitting element and its surroundings in a semiconductor light emitting device of a modified example. The side view which expanded the semiconductor light emitting element and its surroundings about the semiconductor light emitting device of a modification. The side view which expanded the semiconductor light emitting element and its surroundings about the semiconductor light emitting device of a modification. The side view which expanded the semiconductor light emitting element and its surroundings about the semiconductor light emitting device of a modification. The side view which expanded the semiconductor light emitting element and its surroundings about the semiconductor light emitting device of a modification. The side view which expanded the semiconductor light emitting element and its surroundings about the semiconductor light emitting device of a modification. FIG. 57 is an enlarged plan view of the semiconductor light emitting element and its surroundings in the semiconductor light emitting device of FIG. 56; FIG. 7 is an enlarged cross-sectional view of a semiconductor light emitting element and its surroundings in a semiconductor light emitting device of a modified example. The side view which expanded the semiconductor light emitting element and its surroundings about the semiconductor light emitting device of a modification. The side view which expanded the semiconductor light emitting element and its surroundings about the semiconductor light emitting device of a modification. The side view which expanded the semiconductor light emitting element and its surroundings about the semiconductor light emitting device of a modification. The side view which expanded the semiconductor light emitting element and its surroundings about the semiconductor light emitting device of a modification. FIG. 7 is a plan view of a semiconductor light emitting device according to a modification. 64 is a sectional view taken along line 64-64 in FIG. 63. 65 is a sectional view taken along line 65-65 in FIG. 63. The side view which expanded the semiconductor light emitting element and its surroundings about the semiconductor light emitting device of a modification. The side view which expanded the semiconductor light emitting element and its surroundings about the semiconductor light emitting device of a modification. The side view which expanded the semiconductor light emitting element and its surroundings about the semiconductor light emitting device of a modification. FIG. 7 is an enlarged side view of a semiconductor light emitting element and its surroundings in a semiconductor light emitting device of a modified example. The side view which expanded the semiconductor light emitting element and its surroundings about the semiconductor light emitting device of a modification. The side view which expanded the semiconductor light emitting element and its surroundings about the semiconductor light emitting device of a modification. The side view which expanded the semiconductor light emitting element and its surroundings about the semiconductor light emitting device of a modification. The side view which expanded the semiconductor light emitting element and its surroundings about the semiconductor light emitting device of a modification. The perspective view of the semiconductor light emitting device of a modification. 75 is a side view of the semiconductor light emitting device of FIG. 74. FIG. 75 is a side view of the semiconductor light emitting device of FIG. 74 viewed from a different direction from that of FIG. 75. FIG. FIG. 7 is an explanatory diagram illustrating an example of a manufacturing process for a method for manufacturing a semiconductor light emitting device according to a modification. 78 is a sectional view taken along line 78-78 in FIG. 77. FIG. 6 is an explanatory diagram illustrating an example of a manufacturing process in a method for manufacturing a semiconductor light emitting device according to a modification. The perspective view of the semiconductor light emitting device of a modification. FIG. 7 is an explanatory diagram illustrating an example of a manufacturing process for a method for manufacturing a semiconductor light emitting device according to a modification. FIG. 7 is a side view of a semiconductor light emitting device according to a modification. FIG. 82 is a side view of the semiconductor light emitting device of FIG. 81 viewed from a different direction from that of FIG. 82; FIG. 7 is an explanatory diagram illustrating an example of a manufacturing process for a method for manufacturing a semiconductor light emitting device according to a modification. FIG. 7 is an explanatory diagram illustrating an example of a manufacturing process for a method for manufacturing a semiconductor light emitting device according to a modification. 86 is a sectional view taken along line 86-86 in FIG. 85. FIG. 7 is an explanatory diagram illustrating an example of a manufacturing process for a method for manufacturing a semiconductor light emitting device according to a modification. FIG. 7 is an explanatory diagram illustrating an example of a manufacturing process for a method for manufacturing a semiconductor light emitting device according to a modification. FIG. 7 is an enlarged plan view of a semiconductor light emitting element and its surroundings in a semiconductor light emitting device of a modified example. The side view which expanded the semiconductor light emitting element and its surroundings about the semiconductor light emitting device of a modification. 91 is an enlarged plan view of the semiconductor light emitting element and its surroundings in the semiconductor light emitting device of FIG. 90. FIG. The top view of the semiconductor light emitting element of a modification. 93 is a cross-sectional view of the element taken along line 93-93 in FIG. 92.

Hereinafter, embodiments of a semiconductor light emitting device will be described with reference to the drawings.
The embodiments shown below illustrate configurations and methods for embodying technical ideas, and do not limit the material, shape, structure, arrangement, dimensions, etc. of each component to those below. do not have. Various changes can be made to the embodiments below.

In this specification, "a state in which member A is connected to member B" refers to a case where member A and member B are physically directly connected, and a state where member A and member B are electrically connected. This includes a case where the connection is made indirectly through another member that does not affect the connection state.

[First embodiment]
(Configuration of semiconductor light emitting device)
The configuration of the semiconductor light emitting device 1A of the first embodiment will be described with reference to FIGS. 1 to 7. As shown in FIGS. 1 and 2, the semiconductor light emitting device 1A includes a substrate 10, a main surface electrode 20s, a back electrode 20r, a connection electrode 24, a main surface insulating layer 23s, a back insulating layer 23r, a semiconductor light emitting element 30, and a sealing A resin 40 is provided.

In addition, in FIGS. 3 and 4, in order to make it easier to distinguish between the main surface electrode 20s and the back surface electrode 20r, and the main surface insulating layer 23s and the back surface insulating layer 23r, the main surface insulating layer 23s and the back surface insulating layer 23r are each Dots may be added. Further, in FIG. 5, for convenience, the sealing resin 40 is omitted, and a light shielding unit 50, which will be described later, is shown with a chain double-dashed line. In the following description, the thickness direction of the substrate 10 will be referred to as the z direction, and two mutually orthogonal directions among the directions orthogonal to the z direction will be referred to as the x direction and the y direction, respectively. Here, the x direction corresponds to the first direction, and the y direction corresponds to the second direction. Further, in the z direction, the direction from the substrate 10 toward the sealing resin 40 may be referred to as the upper side, and the direction from the sealing resin 40 toward the substrate 10 may be referred to as the lower side.

As shown in FIGS. 1 to 4, the substrate 10 is a member that supports the semiconductor light emitting element 30, and is a member that is connected to a wiring board (not shown) when the semiconductor light emitting device 1A is mounted on the wiring board (not shown). It is. The substrate 10 is made of, for example, an electrically insulating material. For example, glass epoxy resin is used as the material for the substrate 10. Note that as the material of the substrate 10, ceramics having excellent thermal conductivity may be used. An example of such ceramics is AlN (aluminum nitride).

As shown in FIGS. 1 and 2, the substrate 10 is formed into a thin plate shape. As shown in FIGS. 3 and 4, the shape of the substrate 10 viewed from above is a rectangular shape in which the x direction is the long side direction and the y direction is the short side direction.

As shown in FIGS. 1 and 2, the substrate 10 includes a substrate main surface 10s and a substrate back surface 10r facing opposite to each other in the z-direction, and a 4-layer substrate provided between the substrate main surface 10s and the substrate back surface 10r in the z-direction. It has two substrate side surfaces 11 to 14. As shown in FIGS. 3 and 4, the substrate side surface 11 and the substrate side surface 12 are surfaces facing opposite to each other in the x direction. The substrate side surfaces 11 and 12 each extend along the y direction. The substrate side surfaces 13 and 14 are surfaces facing oppositely to each other in the y direction. The substrate side surfaces 13 and 14 each extend along the x direction.

As shown in FIGS. 1 to 3, the substrate 10 includes a substrate central portion 15C that overlaps with the sealing resin 40 when viewed from above, a substrate protrusion 15EA that protrudes from both sides of the sealing resin 40 in the x direction, 15EB. As shown in FIG. 2, the substrate protrusion 15EA is a portion that protrudes from the sealing resin 40 to one side in the x direction, and is defined as a portion between the sealing resin 40 and the substrate side surface 11. The substrate protrusion 15EB is a portion that protrudes from the sealing resin 40 to the other side in the x direction, and is defined as a portion between the sealing resin 40 and the substrate side surface 12.

As shown in FIGS. 3 and 4, the substrate 10 has a first through groove 16 and a second through groove 17. Each of the through grooves 16 and 17 penetrates the substrate 10 in the z direction. In this embodiment, each through groove 16, 17 has a substantially semicircular shape when viewed from above.

The first through groove 16 is provided in the substrate protrusion 15EA so as to be depressed from the substrate side surface 11 in the x direction. When viewed from above, the first through groove 16 is provided at the center of the substrate side surface 11 in the y direction.

The second through groove 17 is provided in the substrate protrusion 15EB so as to be depressed from the substrate side surface 12 in the x direction. When viewed from above, the second through groove 17 is provided at the center of the substrate side surface 12 in the y direction.

Note that the formation position and number of the through grooves 16 and 17 can be changed arbitrarily. For example, the first through groove 16 may be provided at each of a corner formed by the substrate side surface 11 and the substrate side surface 13 and a corner formed by the substrate side surface 11 and the substrate side surface 14. In this case, the first through groove 16 has a quadrant shape when viewed from above. Furthermore, for example, the second through groove 17 may be provided at each of a corner formed by the substrate side surface 12 and the substrate side surface 13 and a corner formed by the substrate side surface 12 and the substrate side surface 14. In this case, the shape of the second through groove 17 when viewed from above is a quadrant.

A connection electrode 24 is arranged in each of the through grooves 16 and 17. More specifically, the connection electrode 24 includes a first connection electrode 24A and a second connection electrode 24B. A first connection electrode 24A is arranged in each first through groove 16. The first connection electrode 24A is arranged along the inner wall of the first through groove 16. A second connection electrode 24B is arranged in each second through groove 17. The second connection electrode 24B is arranged along the inner wall of the second through groove 17.

As shown in FIG. 2, a semiconductor light emitting device 30 is mounted on the main substrate surface 10s of the substrate 10. The semiconductor light emitting device 30 is, for example, a light emitting diode (LED) device. Note that the semiconductor light emitting device 30 may be a light emitting device such as a semiconductor laser (LD: Laser Diode). As shown in FIGS. 1, 5, and 6, the semiconductor light emitting device 30 has a substantially rectangular parallelepiped shape. As shown in FIG. 6, the semiconductor light emitting device 30 has a device main surface 30s and a device back surface 30r facing oppositely to each other in the z direction. In this embodiment, the semiconductor light emitting device 30 is arranged on the substrate main surface 10s such that the device main surface 30s faces the same side as the substrate main surface 10s, and the device back surface 30r faces the same side as the substrate back surface 10r. There is. The element main surface 30s is a light emitting main surface of the semiconductor light emitting element 30 that emits light. In other words, the semiconductor light emitting device 30 emits light upward. In this embodiment, the semiconductor light emitting device 30 has a first electrode 31 formed on the main surface 30s of the device, and a second electrode 32 formed on the back surface 30r of the device. In this embodiment, the first electrode 31 is an anode electrode, and the second electrode 32 is a cathode electrode.

As shown in FIG. 5, the shape of the main surface 30s of the semiconductor light emitting device 30 when viewed from above includes a pair of first sides 30a extending in the x direction and a pair of second sides 30b extending in the y direction. It is rectangular. In this embodiment, the shape of the element main surface 30s when viewed from above is a square. Further, the shape of the semiconductor light emitting device 30 when viewed from above is a square.

Note that the shape of the element main surface 30s (semiconductor light emitting element 30) viewed from above can be arbitrarily changed. In one example, the shape of the element main surface 30s (semiconductor light emitting device 30) viewed from above is a rectangle in which one of the x and y directions is the long side direction, and the other of the x and y directions is the short side direction. There may be.

As shown in FIGS. 2 and 3, the main surface electrode 20s is arranged on the main surface 10s of the substrate 10. As shown in FIGS. The main surface electrode 20s is a conductive member for electrically connecting the semiconductor light emitting element 30 and the wiring board when the semiconductor light emitting device 1A is mounted on the wiring board. The main surface electrode 20s is made of, for example, Cu (copper) foil. The main surface electrode 20s includes a first main surface electrode 21s and a second main surface electrode 22s. The first main surface electrode 21s and the second main surface electrode 22s are arranged apart from each other in the x direction.

The first main surface electrode 21s is an electrode on which the semiconductor light emitting element 30 is mounted and connected to the first connection electrode 24A (see FIG. 3). That is, the first main surface electrode 21s is an electrode that electrically connects the second electrode 32 (see FIG. 6) of the semiconductor light emitting element 30 and the first connection electrode 24A.

As shown in FIG. 3, the first main surface electrode 21s has a die pad 21a, a first base portion 21b, and a connecting portion 21c. In this embodiment, the first main surface electrode 21s is a single component in which the die pad 21a, the first base portion 21b, and the connection portion 21c are integrally formed.

The die pad 21a is a portion on which the semiconductor light emitting device 30 is mounted. As shown in FIGS. 5 and 6, in this embodiment, the semiconductor light emitting device 30 is mounted on the die pad 21a by eutectic bonding. That is, the eutectic bonding layer BM is formed between the semiconductor light emitting element 30 and the die pad 21a in the z direction. The eutectic bonding layer BM includes, for example, AuSn (gold-tin) eutectic. That is, the device back surface 30r of the semiconductor light emitting device 30 and the first main surface electrode 21s (die pad 21a) are connected by the AuSn eutectic. In this embodiment, an Au plating layer and a Sn plating layer are provided on the back surface 30r of the semiconductor light emitting device 30. Note that an Au plating layer may be applied to the back surface 30r of the semiconductor light emitting device 30, and a Sn plating layer may be applied to the die pad 21a. Further, in this embodiment, the semiconductor light emitting element 30 and the die pad 21a are bonded by heating and pressurizing in the z direction while the element back surface 30r of the semiconductor light emitting element 30 and the die pad 21a are in contact with each other. Note that the semiconductor light emitting element 30 and the die pad 21a may be bonded using a conductive bonding material such as solder or Ag paste. The second electrode 32 of the semiconductor light emitting device 30 is electrically connected to the die pad 21a via the eutectic bonding layer BM. That is, the second electrode 32 of the semiconductor light emitting device 30 is electrically connected to the first main surface electrode 21s.

As shown in FIGS. 3 and 5, in this embodiment, the die pad 21a is arranged at the center in the x direction and the center in the y direction of the substrate center portion 15C. In other words, the die pad 21a is provided inside the sealing resin 40. In this embodiment, the die pad 21a has a rectangular shape when viewed from above, with the long side direction in the y direction and the short side direction in the x direction. Die pad 21a is connected to first base 21b via connecting portion 21c. Note that the shape of the die pad 21a viewed from above can be arbitrarily changed. In one example, the shape of the die pad 21a viewed from above may be a square, or may be a rectangle in which the x direction is the long side direction and the y direction is the short side direction.

As shown in FIG. 3, a portion of the connecting portion 21c and the first base portion 21b are arranged outside the sealing resin 40. In other words, a portion of the connecting portion 21c and the first base portion 21b are provided on the substrate protruding portion 15EA. The first base portion 21b is formed extending from the substrate side surface 13 to the substrate side surface 14 of the substrate 10 in the y direction. The first base portion 21b is provided at the end closer to the substrate side surface 11 of both ends of the substrate protrusion 15EA in the x direction. The first base portion 21b is formed to surround the first through groove 16 when viewed from above. A first connection electrode 24A is connected to the first base 21b.

As shown in FIG. 3, the second main surface electrode 22s is an electrode connected to the second connection electrode 24B. The second main surface electrode 22s has a wire pad 22a, a second base portion 22b, and a connecting portion 22c. In this embodiment, the second main surface electrode 22s is a component in which a wire pad 22a, a second base 22b, and a connecting portion 22c are integrally formed.

The wire pad 22a is a portion to which the wire W connected to the semiconductor light emitting element 30 is connected. Here, the wire W is connected to the first electrode 31 (see FIG. 6) of the semiconductor light emitting device 30. The wire W is made of a conductive metal material, such as Au, Al, or Cu. Therefore, the second main surface electrode 22s is an electrode that electrically connects the first electrode 31 of the semiconductor light emitting element 30 and the second connection electrode 24B. As shown in FIGS. 3 and 5, wire pad 22a is arranged adjacent to die pad 21a in the x direction. The wire pad 22a has a rectangular shape when viewed from above. As shown in FIG. 3, the wire pad 22a is connected to the second base 22b via a connecting portion 22c.

A portion of the connecting portion 22c and the second base portion 22b are arranged outside the sealing resin 40. In other words, a portion of the connecting portion 22c and the second base portion 22b are provided on the board protruding portion 15EB. The second base portion 22b is formed extending from the substrate side surface 13 to the substrate side surface 14 of the substrate 10 in the y direction. The second base portion 22b is provided at the end closer to the substrate side surface 12 of both ends of the substrate protrusion 15EB in the x direction. The second base portion 22b is formed to surround the second through groove 17 when viewed from above. A second connection electrode 24B is connected to the second base portion 22b.

As shown in FIGS. 2 and 4, the back electrode 20r is arranged on the back surface 10r of the substrate 10. As shown in FIGS. The back electrode 20r is an electrode to which a conductive bonding material is applied when the semiconductor light emitting device 1A is mounted on a wiring board using a conductive bonding material such as solder or Ag (silver) paste. The back electrode 20r has a first back electrode 21r and a second back electrode 22r. The first back electrode 21r and the second back electrode 22r are arranged apart from each other in the x direction.

The first back electrode 21r is provided on the substrate protrusion 15EA. As shown in FIG. 2, the first back electrode 21r is arranged to overlap with the first main surface electrode 21s when viewed from below, and is connected to the first main surface electrode 21s by the first connection electrode 24A. There is. That is, the first back electrode 21r is electrically connected to the second electrode 32 (see FIG. 6) of the semiconductor light emitting device 30. As shown in FIG. 4, the first back electrode 21r is provided over the entire substrate back surface 10r of the substrate protrusion 15EA. In this embodiment, as shown in FIG. 2, of both ends of the first back electrode 21r in the x direction, the end near the center of the substrate 10 in the x direction overlaps with the sealing resin 40 when viewed from below. placed in position.

As shown in FIGS. 2 and 4, the second back electrode 22r is provided on the substrate protrusion 15EB. As shown in FIG. 2, the second back electrode 22r is arranged to overlap the second main surface electrode 22s when viewed from below, and is connected to the second main surface electrode 22s by a second connection electrode 24B. There is. That is, the second back electrode 22r is electrically connected to the first electrode 31 (see FIG. 6) of the semiconductor light emitting device 30. As shown in FIG. 4, the second back electrode 22r is provided over the entire surface of the substrate back surface 10r of the substrate protrusion 15EB. As shown in FIG. 2, of both ends of the second back electrode 22r in the x direction, the end near the center of the substrate 10 in the x direction is arranged at a position overlapping the sealing resin 40 when viewed from below. There is.

Note that the respective sizes of the first back electrode 21r and the second back electrode 22r can be changed arbitrarily. In one example, of both ends of the first back electrode 21r in the x direction, the end near the center of the substrate 10 in the x direction may be located closer to the substrate side surface 11 than the sealing resin 40. Further, of both ends of the second back electrode 22r in the x direction, the end near the center of the substrate 10 in the x direction may be located closer to the substrate side surface 12 than the sealing resin 40.

As shown in FIGS. 2 and 3, the main surface insulating layer 23s is a member that covers the main surface electrode 20s on the main surface 10s of the substrate 10. The main surface insulating layer 23s mainly covers the portion of the main surface electrode 20s that is disposed outside the sealing resin 40. In this embodiment, a portion of the main surface insulating layer 23s enters into the sealing resin 40 in the x direction. The main surface insulating layer 23s is made of a resin material having electrical insulation properties. The main surface insulating layer 23s is a resist layer, and is called a solder resist layer.

The main surface insulating layer 23s includes a first main surface insulating layer 23sa that covers a part of the first main surface electrode 21s, and a second main surface insulating layer 23sb that covers a part of the second main surface electrode 22s. ing.
As shown in FIG. 3, the first main surface insulating layer 23sa covers a part of the connecting portion 21c and the first base portion 21b of the first main surface electrode 21s. On the other hand, the first main surface insulating layer 23sa does not cover the first connection electrode 24A. In this embodiment, the end closer to the center of the substrate 10 in the x direction out of both ends in the x direction of the first main surface insulating layer 23sa enters into the sealing resin 40 . Note that, of both ends of the first main surface insulating layer 23sa in the x direction, the end closer to the center of the substrate 10 in the x direction may be arranged outside the sealing resin 40. Further, the first main surface insulating layer 23sa may cover the first connection electrode 24A.

The second main surface insulating layer 23sb covers a part of the connecting portion 22c of the second main surface electrode 22s and the second base portion 22b. On the other hand, the second main surface insulating layer 23sb does not cover the second connection electrode 24B. In this embodiment, the end closer to the center of the substrate 10 in the x direction among both ends of the second main surface insulating layer 23sb in the x direction enters into the sealing resin 40. Note that, of both ends of the second main surface insulating layer 23sb in the x direction, the end closer to the center of the substrate 10 in the x direction may be arranged outside the sealing resin 40. Further, the second main surface insulating layer 23sb may cover the second connection electrode 24B.

As shown in FIGS. 2 and 4, the back insulating layer 23r is disposed at the center of the back surface 10r of the substrate 10 in the x direction, and functions as a mark for determining the connection direction of the semiconductor light emitting device 1A. When viewed from below, the back insulating layer 23r has a convex shape that projects in the x direction toward the first back electrode 21r. The back insulating layer 23r is a resist layer.

As shown in FIGS. 1 to 3, the sealing resin 40 is provided at the center of the main surface 10s of the substrate 10 in the x direction, and includes the semiconductor light emitting element 30, a part of the main surface electrode 20s, and the wire W. is covered. The sealing resin 40 is made of a translucent resin material. Transparent or translucent epoxy resins, silicone resins, acrylic resins, polyvinyl resins, and the like are used as such resin materials.

As shown in FIGS. 1 and 3, the sealing resin 40 has a resin main surface 40s facing the same side as the substrate main surface 10s in the z direction, and a region between the substrate main surface 10s and the resin main surface 40s in the z direction. It has four resin side surfaces 41 to 44 formed in the following manner.

The resin side surfaces 41 and 42 are surfaces facing oppositely to each other in the x direction. The resin side surface 41 is a surface facing the same side as the substrate side surface 11, and the resin side surface 42 is a surface facing the same side as the substrate side surface 12. As shown in FIGS. 2 and 6, the resin side surfaces 41 and 42 are sloped surfaces that slope toward the center position CB of the sealing resin 40 in the x direction as the distance from the main surface 10s of the substrate increases in the z direction. As shown in FIG. 3, the resin side surfaces 43 and 44 are surfaces facing oppositely to each other in the y direction. The resin side surface 43 is a surface facing the same side as the substrate side surface 13, and the resin side surface 44 is a surface facing the same side as the substrate side surface 14. The resin side surfaces 43 and 44 extend along the y direction and the z direction. The resin side surface 43 is flush with the substrate side surface 13, and the resin side surface 44 is flush with the substrate side surface 14.

As shown in FIGS. 1 to 3, FIG. 6, and FIG. 7, the semiconductor light emitting device 1A includes a light blocking unit 50 that blocks light emitted upward from the semiconductor light emitting element 30.
The light blocking unit 50 blocks visible light and infrared light, and is made of a material that has light blocking properties. Examples of the light-shielding material include liquid crystal polymers, light-shielding resin materials such as nylon, and silicone, and metal materials. In this embodiment, the light blocking unit 50 is made of white liquid crystal polymer. Note that the light shielding unit 50 is not limited to white, and may be of another color (for example, black).

As shown in FIGS. 2, 6, and 7, the light shielding unit 50 is arranged closer to the main resin surface 40s than the semiconductor light emitting element 30 in the z direction. That is, the light shielding unit 50 is arranged above the semiconductor light emitting device 30. In this embodiment, the light shielding unit 50 is arranged above the wire W. More specifically, the light shielding unit 50 is arranged closer to the resin main surface 40s in the z direction than the part of the wire W that is closest to the resin main surface 40s in the z direction. In this embodiment, the light shielding unit 50 is embedded in the sealing resin 40. That is, the light shielding unit 50 is arranged inside the sealing resin 40.

As shown in FIGS. 1 and 3, the light blocking unit 50 includes a light blocking section 51 and a pair of support sections 52. In this embodiment, the light shielding unit 50 is a single component in which a light shielding part 51 and a pair of support parts 52 are integrally formed. That is, the light shielding part 51 and the pair of support parts 52 are each made of a light shielding resin material.

As shown in FIG. 6, the light shielding part 51 is disposed apart from the semiconductor light emitting element 30 upward in the z direction away from the element main surface 30s. In this embodiment, the light shielding part 51 is arranged above the wire W. More specifically, the light shielding part 51 is arranged closer to the resin main surface 40s than the part of the wire W that is closest to the resin main surface 40s in the z direction. The light shielding portion 51 is arranged to be spaced apart from the portion of the wire W that is closest to the main resin surface 40s in the z direction. The light shielding part 51 is embedded in the sealing resin 40. In this way, the sealing resin 40 seals the semiconductor light emitting element 30 while supporting the light shielding part 51.

As shown in FIGS. 3 and 5, the light shielding portion 51 is arranged to cover the entire main surface 30s of the semiconductor light emitting device 30 when viewed from above. In this embodiment, the area of the light shielding portion 51 is larger than the area of the main surface 30s of the semiconductor light emitting device 30 when viewed from above. The shape of the light shielding portion 51 when viewed from above is rectangular, and is similar to the shape of the main surface 30s of the semiconductor light emitting device 30 when viewed from above. That is, in this embodiment, the shape of the light shielding part 51 when viewed from above is a square.

As shown in FIG. 5, the light shielding part 51 has a protruding region R1 that protrudes toward the substrate side surface 11 (see FIG. 3) in the x direction with respect to the element main surface 30s of the semiconductor light emitting element 30, and On the other hand, a protruding region R2 protrudes toward the substrate side surface 12 (see FIG. 3) in the x direction, and a protruding region R3 protrudes toward the substrate side surface 13 (see FIG. 3) in the y direction with respect to the element main surface 30s. , and a protruding region R4 protruding toward the substrate side surface 14 (see FIG. 3) in the y direction with respect to the element main surface 30s.

The protruding region R1 is a portion of the region protruding from the second side 30b of the semiconductor light emitting element 30 in the x direction that is closer to the resin side surface 41 of the sealing resin 40 (see FIG. 3) than the element main surface 30s. The protruding region R2 is a portion of the region protruding from the second side 30b of the semiconductor light emitting element 30 in the x direction that is closer to the resin side surface 42 of the sealing resin 40 (see FIG. 3) than the element main surface 30s. The protruding region R3 is a portion of the region protruding from the first side 30a of the semiconductor light emitting element 30 in the y direction that is closer to the resin side surface 43 of the sealing resin 40 (see FIG. 3) than the element main surface 30s. The protruding region R4 is a portion of the region protruding from the first side 30a of the semiconductor light emitting element 30 in the y direction that is closer to the resin side surface 44 of the sealing resin 40 (see FIG. 3) than the element main surface 30s. These protruding regions R1 to R4 are formed in a frame shape surrounding the element main surface 30s from the x direction and the y direction when viewed from above.

According to such protruding regions R1 to R4, the protruding regions overlap each other at the four corners of the light shielding portion 51 when viewed from above. That is, in the corners of the light shielding portion 51 near the substrate side surface 11 (see FIG. 3) and the substrate side surface 13, the protruding region R1 and the protruding region R3 overlap. In the corner portion of the light shielding portion 51 near the substrate side surface 11 and the substrate side surface 14, the protruding region R1 and the protruding region R4 overlap. In the corner portions of the light shielding portion 51 near the substrate side surface 12 (see FIG. 3) and the substrate side surface 13, the protruding region R2 and the protruding region R3 overlap. In the corner portion of the light shielding portion 51 near the substrate side surface 12 and the substrate side surface 14, the protruding region R2 and the protruding region R4 overlap.

As shown in FIG. 5, in this embodiment, the center position CX of the light shielding part 51 is the same as the center position CA of the semiconductor light emitting element 30 when viewed from above. As a result, when viewed from above, the area of the protruding region R1, the area of the protruding region R2, the area of the protruding region R3, and the area of the protruding region R4 are each equal to each other. In other words, the areas of each of the protruding regions R1 to R4 are the same. Here, the center position CX of the light shielding part 51 is the center position of the light shielding part 51 in the x direction and the y direction when viewed from above. The center position CA of the semiconductor light emitting element 30 is the center position of the main surface 30s of the semiconductor light emitting element 30 in the x direction and the y direction when viewed from above.

Here, when viewed from above, the amount of deviation between the center position CX of the light shielding part 51 and the center position CA of the semiconductor light emitting element 30 is, for example, within 5% of the length of the light shielding part 51 in the x direction or the length in the y direction. If there is, it can be said that the center position CX of the light shielding part 51 is the same as the center position CA of the semiconductor light emitting element 30. Furthermore, if the difference between the area of the protruding region R1, the area of the protruding region R2, the area of the protruding region R3, and the area of the protruding region R4 is within 10% of the protruding region R1, then the area of the protruding region R1 is , it can be said that the area of the protruding region R2, the area of the protruding region R3, and the area of the protruding region R4 are each equal to each other.

As shown in FIG. 6, in this embodiment, the center position CA of the semiconductor light emitting element 30 is the same as the center position CB of the sealing resin 40 when viewed from above. In other words, in this embodiment, the center position CX of the light shielding part 51 is the same as the center position CB of the sealing resin 40 when viewed from above.

Here, when viewed from above, the amount of deviation between the center position CA of the semiconductor light emitting element 30 and the center position CB of the sealing resin 40 is, for example, 5% of the length of the sealing resin 40 in the x direction or the length in the y direction. If it is within this range, it can be said that the center position CA of the semiconductor light emitting element 30 is the same as the center position CB of the sealing resin 40. Also, when viewed from above, the amount of deviation between the center position CX of the light shielding part 51 and the center position CB of the sealing resin 40 is within 5% of the length of the sealing resin 40 in the x direction or the length in the y direction. If there is, it can be said that the center position CX of the light shielding part 51 is the same as the center position CB of the sealing resin 40.

As described above, in this embodiment, when viewed from above, the distance between the semiconductor light emitting element 30 and the resin side surface 41 of the sealing resin 40 in the x direction and the distance between the semiconductor light emitting element 30 and the sealing resin 40 in the x direction are determined. The distances from the resin side surface 42 are equal to each other. Also, when viewed from above, the distance between the semiconductor light emitting element 30 and the resin side surface 43 of the sealing resin 40 in the y direction, and the distance between the semiconductor light emitting element 30 and the resin side surface 44 of the sealing resin 40 in the y direction. are equal to each other.

When viewed from above, the distance between the light shielding part 51 and the resin side surface 41 in the x direction is equal to the distance between the light shielding part 51 and the resin side surface 42 in the x direction. Further, when viewed from above, the distance between the light shielding portion 51 and the resin side surface 43 in the y direction is equal to the distance between the light shielding portion 51 and the resin side surface 44 in the y direction.

As shown in FIG. 6, the light shielding portion 51 has a convex portion 51a that protrudes toward the semiconductor light emitting device 30. As shown in FIG. The convex portion 51a has a curved surface that protrudes toward the semiconductor light emitting device 30. In this embodiment, the convex portion 51a has a spherical surface that protrudes toward the semiconductor light emitting device 30. As shown in FIG. 6, the spherical surface of the convex portion 51a is formed so as to be closest to the semiconductor light emitting element 30 at the center position CX of the light shielding portion 51. As shown in FIG.

In this embodiment, the surface of the light shielding part 51 opposite to the convex part 51a in the z direction, that is, the upper surface 51b, which is the surface of the light shielding part 51 facing the same side as the main resin surface 40s, is perpendicular to the z direction. Consists of a flat surface.

As shown in FIG. 3, the pair of support parts 52 extend along the y direction from both ends of the light shielding part 51 in the y direction. The pair of support parts 52 are formed into a flat plate shape. The plate thickness of the pair of support parts 52 is thinner than the thickness of the light shielding part 51 (the length in the z direction from the upper surface 51b of the light shielding part 51 to the tip surface of the convex part 51a). The shape of each support portion 52 when viewed from above is a band shape extending in the y direction. The pair of support portions 52 includes a support portion 52A extending toward the substrate side surface 13 and a support portion 52B extending toward the substrate side surface 14. The distal end surface of the support portion 52A in the y direction is exposed from the resin side surface 43, and the distal end surface of the support portion 52B in the y direction is exposed from the resin side surface 44.

As shown in FIG. 7 , the top surface 52 a of the pair of support parts 52 facing away from the substrate 10 in the z direction is flush with the top surface 51 b of the light shielding part 51 . Note that the position of the pair of support parts 52 in the z direction with respect to the light shielding part 51 can be changed arbitrarily. In one example, the upper surfaces 52a of the pair of support parts 52 may be located below or above the upper surface 51b of the light shielding part 51 in the z direction.

(Method for manufacturing semiconductor light emitting device)
A method for manufacturing the semiconductor light emitting device 1A of this embodiment will be described with reference to FIGS. 8 to 18. In this embodiment, as shown in FIGS. 13, 15, 16, and 18, a plurality of semiconductor light emitting devices 1A are manufactured simultaneously.

As shown in FIG. 8, the method for manufacturing the semiconductor light emitting device 1A includes a step of preparing a base material 800. The base material 800 is a member forming the substrate 10 shown in FIG. The base material 800 is made of, for example, an electrically insulating material. As the material of the base material 800, for example, glass epoxy resin is used. The base material 800 has a base material main surface 801 and a base material back surface 802 facing oppositely to each other in the z direction. In this step, although not shown, a plurality of through holes 803 (see FIG. 13) are provided in the base material 800. These through holes 803 form the first through groove 16 and the second through groove 17 of the substrate 10 shown in FIG.

As shown in FIG. 9, the method for manufacturing the semiconductor light emitting device 1A includes a step of forming a main surface electrode 820s, a back surface electrode 820r, and a connection electrode 824. The main surface electrode 820s is a member forming the main surface electrode 20s shown in FIG. 3, and the back electrode 820r is a member forming the back electrode 20r shown in FIG. The connection electrode 824 is a member forming the connection electrode 24 shown in FIG.

Although not shown, each of the main surface electrode 820s, the back surface electrode 820r, and the connection electrode 824 has a metal layer and a conductive layer. In this embodiment, the main surface electrode 820s, the back surface electrode 820r, and the connection electrode 824 are each made of a laminate of a metal layer and a conductive layer. The main surface electrode 820s, the back surface electrode 820r, and the connection electrode 824 each include a step of forming a metal layer, a step of forming a mask on the metal layer by photolithography, and a step of forming a conductive layer in contact with the metal layer. It is formed through

First, a metal layer is formed by, for example, a sputtering method. The metal layer includes, for example, a Ti layer and a Cu layer. As a method for forming the metal layer, a Ti layer is formed on the main surface 801 of the base material 800, the back surface 802 of the base material, and the inner wall surface of the through hole 803, respectively, and a Cu layer is formed in contact with the Ti layer. Next, the metal layer is covered with, for example, a photosensitive resist layer (not shown), and the resist layer is exposed and developed to form a mask having an opening. Next, a conductive layer is formed by depositing plating metal on the surface of the metal layer exposed from the mask, for example, by electrolytic plating using the metal layer as a conductive path. Next, the mask is removed, and portions of the metal layer other than the portion where the conductive layer is laminated are removed, for example, by etching. Through such steps, the main surface electrode 820s, the back surface electrode 820r, and the connection electrode 824 are formed.

As shown in FIG. 10, the method for manufacturing a semiconductor light emitting device 1A includes a step of mounting a semiconductor light emitting element 30. As shown in FIG. In this embodiment, the semiconductor light emitting device 30 is mounted on the main surface electrode 820s.

More specifically, a eutectic bonding layer BM is formed in a portion of the main surface electrode 820s on which the semiconductor light emitting element 30 is placed. Then, the semiconductor light emitting device 30 is placed on the eutectic bonding layer BM. Then, the semiconductor light emitting element 30 and the main surface electrode 820s are bonded by heating and pressurizing in the z direction while the back surface 30r of the semiconductor light emitting device 30 and the main surface electrode 820s are in contact with each other.

As shown in FIG. 11, the method for manufacturing the semiconductor light emitting device 1A includes a step of forming a wire W. As shown in FIG. The wire W is formed by wire bonding using a wire bonding device. The wire W is made of, for example, Au, Cu or Al.

As shown in FIG. 12, the method for manufacturing the semiconductor light emitting device 1A includes a step of forming a main surface insulating layer 823s and a back surface insulating layer 823r. The main surface insulating layer 823s is a member forming the main surface insulating layer 23s shown in FIG. 3, and the back surface insulating layer 823r is a member forming the back surface insulating layer 23r shown in FIG.

The main surface insulating layer 823s is a resist layer, and is called a solder resist layer. As a method for forming the main surface insulating layer 823s, for example, a film-like resist is pressure-bonded and attached to the base material main surface 801 so as to cover the main surface electrode 820s, and then hardened.

The back insulating layer 823r is a resist layer. As a method for forming the back insulating layer 823r, for example, a film-like resist is pressure-bonded and attached to the back surface 802 of the base material, and then cured. Note that the main surface insulating layer 823s and the back surface insulating layer 823r may each be formed using liquid resist.

As shown in FIGS. 13 to 16, the method for manufacturing the semiconductor light emitting device 1A includes a step of arranging a light shielding unit 50. As shown in FIGS. Here, in FIG. 13, the main surface electrode 820s, the main surface insulating layer 823s, the connection electrode 824 and A through hole 803 is formed, and the semiconductor light emitting device 30 is mounted therein.

As shown in FIG. 15, a light shielding unit holder 860 is placed on the main surface 801 of the base material 800. As shown in FIG. 14, the light shielding unit holder 860 includes two light shielding unit connectors 850 in which a plurality of light shielding units 50 (three in this embodiment) are connected in the y direction, and a plurality of light shielding unit connectors 850. It has a pair of holding parts 861 that hold 850. The two light shielding unit connected bodies 850 are arranged to be spaced apart from each other in the x direction.

As shown in FIG. 15, the light-shielding unit holder 860 is arranged on the base material main surface 801 so that the light-shielding portion 51 of each light-shielding unit 50 covers the entire element main surface 30s of the semiconductor light emitting device 30 when viewed from above. has been done.

As shown in FIG. 16, the light shielding unit combination body 850 is arranged above and apart from each semiconductor light emitting element 30. The light shielding unit link body 850 is arranged above and apart from the wire W connected to each semiconductor light emitting element 30.

As shown in FIG. 17, the method for manufacturing the semiconductor light emitting device 1A includes a step of forming a resin layer 840. The resin layer 840 is a member forming the sealing resin 40 in FIG. The resin layer 840 is made of a translucent resin material. In this embodiment, the resin layer 840 is made of transparent or translucent epoxy resin, silicone resin, acrylic resin, polyvinyl resin, or the like. As shown in FIG. 18, the resin layer 840 seals a plurality of (three in this embodiment) semiconductor light emitting devices 30 and a light shielding unit assembly 850 arranged in the y direction. That is, the light shielding unit connection body 850 is embedded within the resin layer 840.

As shown in FIG. 18, the method for manufacturing a semiconductor light emitting device 1A includes a step of cutting a base material 800 and a resin layer 840. For example, the resin layer 840 and the base material 800 are cut by a dicing blade along a cutting line CL shown by a thick dashed line in FIG. 18 . Thereby, the sealing resin 40, the light shielding unit 50, and the substrate 10 are formed into individual pieces. Through the above steps, the semiconductor light emitting device 1A is manufactured.

(effect)
The operation of the semiconductor light emitting device 1A of this embodiment will be described with reference to FIGS. 19 and 20. Note that in FIGS. 19 and 20, the wire W is omitted for convenience of understanding. Further, in FIG. 20, for convenience of understanding, the second main surface electrode 22s, the main surface insulating layer 23s, and the second connection electrode 24B are omitted.

As shown in FIGS. 19 and 20, when light emitted upward from the main surface 30s of the semiconductor light emitting device 30 hits the convex portion 51a of the light shielding portion 51 near the center position CX of the light shielding portion 51, The light is reflected toward the substrate 10 at the convex portion 51a. Thereby, light directed upward from the main surface 30s of the semiconductor light emitting device 30 is blocked.

Further, as shown in FIGS. 19 and 20, when the light emitted upward from the main surface 30s of the semiconductor light emitting device 30 hits a portion of the convex portion 51a above the vicinity of the center position CX of the light shielding portion 51, , the light is reflected toward the resin side surfaces 41 to 44 at the convex portion 51a.

Further, as shown in FIG. 20, when the light emitted upward from the main surface 30s of the semiconductor light emitting device 30 hits the upper part of the convex part 51a of the light shielding part 51, it is reflected by the upper part. If the light does not hit the pair of support parts 52, it is emitted from the resin side surfaces 43, 44 near the resin main surface 40s. For this reason, when the semiconductor light emitting device 1A is viewed from above, the light at the outer peripheral portion of the main resin surface 40s becomes stronger.

In this way, when light is emitted upward from the main surface 30s of the semiconductor light emitting device 30, transmission of the light is suppressed in the portion where the main surface 30s of the device is covered by the light blocking section 51 when viewed from above. Therefore, when the semiconductor light emitting device 1A is viewed from above, the intensity of light directed upward from the element main surface 30s of the semiconductor light emitting element 30 becomes weak. Here, the intensity of light refers to brightness, luminous intensity, or illuminance. Therefore, the difference between the intensity of light directed upward from the main surface 30s of the semiconductor light emitting device 30 and the intensity of light emitted from the surroundings of the semiconductor light emitting device 1A, for example from the resin side surfaces 41 to 44 of the sealing resin 40, is small. Become.

Further, since the convex portion 51a of the light shielding portion 51 is formed in a spherical shape, the light emitted upward from the element main surface 30s of the semiconductor light emitting device 30 is reflected by the convex portion 51a and is reflected from the resin side surface 41 to The light is emitted from each of the 44. In other words, light from the main surface 30s of the semiconductor light emitting device 30 is guided to the resin side surfaces 41 to 44 by the convex portion 51a. Therefore, the difference between the intensity of light directed upward from the element principal surface 30s of the semiconductor light emitting element 30 and the intensity of light emitted from the resin side surfaces 41 to 44 of the sealing resin 40 is further reduced.

(effect)
According to the semiconductor light emitting device 1A of this embodiment, the following effects can be obtained.
(1-1) The semiconductor light emitting device 1A includes a light shielding part 51 that covers the entire main surface 30s of the semiconductor light emitting element 30 when viewed from above, and a transparent part that seals the semiconductor light emitting element 30 while supporting the light shielding part 51. A photosensitive sealing resin 40 is provided. According to this configuration, the light directed upward from the element main surface 30s of the semiconductor light emitting element 30 is blocked by the light shielding part 51, so that the intensity of the light emitted upward from the element main surface 30s is weakened. Therefore, the difference between the intensity of light emitted upward from the element main surface 30s and the intensity of light around the semiconductor light emitting device 1A becomes small, so that when the semiconductor light emitting device 1A is viewed from above, the semiconductor light emitting device It is possible to prevent the main surface 30s of the element 30 from appearing to shine locally. In addition, by using the sealing resin 40, it is possible to maintain the state in which the light shielding part 51 is supported at a distance above the semiconductor light emitting element 30.

(1-2) The light shielding part 51 is embedded in the sealing resin 40. According to this configuration, compared to a configuration in which the light shielding part 51 is arranged on the resin main surface 40s of the sealing resin 40, the distance between the light shielding part 51 and the element main surface 30s of the semiconductor light emitting element 30 in the z direction is The distance can be shortened. Therefore, the light blocking portion 51 can block more light from the main surface 30s of the semiconductor light emitting device 30. Therefore, the difference between the intensity of light emitted upward from the element main surface 30s and the intensity of light around the semiconductor light emitting device 1A can be further reduced, and when the semiconductor light emitting device 1A is viewed from above, It is possible to further suppress the main surface 30s of the semiconductor light emitting device 30 from appearing to shine locally.

(1-3) The light shielding portion 51 is arranged above the wire W connected to the first electrode 31 formed on the main surface 30s of the semiconductor light emitting device 30. According to this configuration, interference between the light shielding portion 51 and the wire W due to misalignment of the light shielding unit 50 in the x direction and the y direction can be suppressed, for example, during manufacturing of the semiconductor light emitting device 1A.

(1-4) When viewed from above, the area of the light shielding portion 51 is larger than the area of the main surface 30s of the semiconductor light emitting device 30. According to this configuration, the light blocking portion 51 can block more light from the main surface 30s of the semiconductor light emitting device 30. Therefore, the difference between the intensity of light emitted upward from the element main surface 30s and the intensity of light around the semiconductor light emitting device 1A can be further reduced, and when the semiconductor light emitting device 1A is viewed from above, It is possible to further suppress the main surface 30s of the semiconductor light emitting device 30 from appearing to shine locally.

(1-5) The light shielding portion 51 has a convex portion 51a that protrudes toward the semiconductor light emitting device 30. The convex portions 51a have curved surfaces that curve toward each other toward the semiconductor light emitting device 30. According to this configuration, light directed upward from the main surface 30s of the semiconductor light emitting device 30 is reflected by the convex portion 51a and exits from one of the resin side surfaces 41 to 44 of the sealing resin 40. Therefore, the intensity of light emitted from any of the resin side surfaces 41 to 44 of the sealing resin 40 can be increased while weakening the intensity of light directed upward from the main surface 30s of the semiconductor light emitting device 30. Therefore, the difference between the intensity of light directed upward from the element principal surface 30s of the semiconductor light emitting element 30 and the intensity of light emitted from any of the resin side surfaces 41 to 44 of the sealing resin 40 is further reduced.

(1-6) The convex portion 51a has a spherical surface. According to this configuration, light from the main surface 30s of the semiconductor light emitting device 30 is reflected by the convex portion 51a and exits from the resin side surfaces 41 to 44 of the sealing resin 40. Therefore, the intensity of light emitted from the resin side surfaces 41 to 44 of the sealing resin 40 can be increased while weakening the intensity of light directed upward from the main surface 30s of the semiconductor light emitting device 30. Therefore, the difference between the intensity of light directed upward from the element principal surface 30s of the semiconductor light emitting element 30 and the intensity of light emitted from the resin side surfaces 41 to 44 of the sealing resin 40 is further reduced.

(1-7) When viewed from above, the areas of the protruding regions R1 to R4 of the light shielding portion 51 relative to the main surface 30s of the semiconductor light emitting device 30 are equal to each other. According to this configuration, light directed upward from the main surface 30s of the semiconductor light emitting device 30 is reflected by the convex portion 51a, and variations in the intensity of the light emitted from the resin side surfaces 41 to 44 of the sealing resin 40 are suppressed. can.

(1-8) The light shielding unit 50 has a pair of support parts 52. The pair of support parts 52 is made of a light-shielding material. According to this configuration, since the light from the element main surface 30s of the semiconductor light emitting element 30 is also blocked by the pair of support parts 52, the intensity of the light emitted upward from the element main surface 30s can be further weakened. I can do it.

(1-9) The pair of support parts 52 are exposed from the resin side surfaces 43 and 44 of the sealing resin 40, respectively. According to this configuration, when the semiconductor light emitting device 1A is manufactured, the light shielding unit assembly 850 in which the plurality of light shielding parts 51 are connected to the plurality of semiconductor light emitting elements 30 connects the plurality of light shielding parts to the plurality of semiconductor light emitting elements 30. 51 are individually arranged. Then, in the step of cutting the resin layer 840 to form the sealing resin 40, the portions connecting the plurality of light shielding parts 51 are also cut, thereby forming the pair of supporting parts 52. At this time, the pair of support parts 52 come to be exposed from the resin side surfaces 43 and 44. In this way, when manufacturing a plurality of semiconductor light emitting devices 1A at the same time, a plurality of light shielding parts 51 can be easily individually arranged for a plurality of semiconductor light emitting elements 30.

(1-10) The light shielding unit 50 may be made of a metal material. According to this configuration, the thickness of the light shielding section 51 having a predetermined light shielding property (the size of the light shielding section 51 in the z direction) can be made thinner than when the light shielding unit 50 is made of a resin material. Therefore, the height of the semiconductor light emitting device 1A can be reduced.

[Second embodiment]
A semiconductor light emitting device 1B of the second embodiment will be described with reference to FIGS. 21 to 30. The semiconductor light emitting device 1B of this embodiment is different from the semiconductor light emitting device 1A of the first embodiment in the configuration of the sealing resin 40 and the configuration of the light shielding unit 50. In the following description, components common to those of the semiconductor light emitting device 1A of the first embodiment are denoted by the same reference numerals, and the description thereof may be omitted.

(Configuration of semiconductor light emitting device)
The configuration of the semiconductor light emitting device 1B of this embodiment will be described with reference to FIGS. 21 to 23. As shown in FIGS. 21 and 23, the sealing resin 40 has a first resin layer 40A and a second resin layer 40B, and has a structure in which the second resin layer 40B is laminated on the first resin layer 40A. It is. The first resin layer 40A and the second resin layer 40B are made of the same material. In this embodiment, each resin layer 40A, 40B is made of a translucent resin material. Transparent or translucent epoxy resins, silicone resins, acrylic resins, polyvinyl resins, and the like are used as such resin materials. In this embodiment, each resin layer 40A, 40B is made of transparent epoxy resin.

The first resin layer 40A is a resin layer in contact with the substrate 10, and seals a portion of the main surface electrode 20s, a portion of the main surface insulating layer 23s, the semiconductor light emitting element 30, and the wire W. The first resin layer 40A has a first resin main surface 40As facing the same side as the substrate main surface 10s of the substrate 10 in the z direction. In the z direction, the first resin main surface 40As is arranged above the element main surface 30s of the semiconductor light emitting device 30 and the wire W. The first resin main surface 40As is formed apart above the element main surface 30s and the wire W in the z direction. In this embodiment, the first resin main surface 40As is a flat surface orthogonal to the z direction.

The second resin layer 40B is a resin layer in contact with the first resin main surface 40As of the first resin layer 40A, and seals the light shielding unit 50. In this way, the first resin main surface 40As constitutes an interface between the first resin layer 40A and the second resin layer 40B. The second resin layer 40B has a main resin surface 40s.

The light shielding unit 50 is placed on the first resin layer 40A and covered with the second resin layer 40B. That is, the light shielding unit 50 is embedded within the sealing resin 40. The light blocking unit 50 is made of a light blocking material, and in this embodiment, it is made of white nylon or silicone resin.

The light shielding unit 50 includes a light shielding section 51. That is, the light shielding unit 50 of this embodiment differs from the light shielding unit 50 of the first embodiment in that it does not have the pair of support parts 52 (see FIG. 1). Therefore, the light shielding unit 50 of this embodiment does not have any portion exposed from the resin side surfaces 43 and 44 of the sealing resin 40.

The light shielding part 51 is arranged on the first resin main surface 40As. As shown in FIGS. 22 and 23, in this embodiment, the light shielding portion 51 is formed into a thin plate shape having a circular shape when viewed from above. That is, the light shielding part 51 of this embodiment does not have the convex part 51a (see FIG. 6) like the first embodiment.

Note that the shape of the light shielding portion 51 viewed from above can be arbitrarily changed. In one example, the shape of the light shielding portion 51 viewed from above may be similar to the shape of the main surface 30s of the semiconductor light emitting device 30 when viewed from above.

As shown in FIG. 22, the light shielding portion 51 is provided so as to cover the entire main surface 30s of the semiconductor light emitting device 30 when viewed from above. In this embodiment, the area of the light shielding portion 51 when viewed from above is larger than the area of the element main surface 30s when viewed from above.

As shown in FIG. 21, in this embodiment, the center position CX of the light shielding part 51 is the same as the center position CA of the semiconductor light emitting element 30. Here, if the amount of deviation between the center position CX of the light shielding part 51 and the center position CA of the semiconductor light emitting element 30 is within 5% of the length of the light shielding part 51 in the x direction or the length in the y direction, the light shielding part It can be said that the center position CX of 51 is the same as the center position CA of the semiconductor light emitting element 30.

As can be seen from FIG. 22, when viewed from above, the light shielding part 51 includes a protruding area that protrudes toward the resin side surface 41 of the sealing resin 40 in the x direction with respect to the element main surface 30s of the semiconductor light emitting element 30, and an element main surface 30s of the semiconductor light emitting element 30. A protruding region that protrudes toward the resin side surface 42 of the sealing resin 40 in the x direction with respect to the surface 30s, and a protruding region that protrudes toward the resin side surface 43 of the sealing resin 40 in the y direction with respect to the element main surface 30s. and a protruding region that protrudes toward the resin side surface 44 of the sealing resin 40 in the y direction with respect to the element main surface 30s. When viewed from above, each of these protruding regions has an arcuate shape. Further, the areas of these protruding regions are equal to each other.

(Method for manufacturing semiconductor light emitting device)
A method for manufacturing the semiconductor light emitting device 1B of this embodiment will be described with reference to FIGS. 24 to 30. The method for manufacturing the semiconductor light emitting device 1B of this embodiment differs from the method for manufacturing the semiconductor light emitting device 1A of the first embodiment mainly in the step of forming the resin layer and the step of forming the light shielding unit 50. In the following description, the process of forming the resin layer and the process of forming the light shielding unit 50 will be explained in detail.

First, the manufacturing method of the semiconductor light emitting device 1B includes a step of preparing a base material 800, a step of forming the main surface electrode 820s, a back surface electrode 820r, and a connection electrode 824, a step of mounting the semiconductor light emitting element 30, and a step of preparing the base material 800. and a step of forming a main surface insulating layer 823s and a back surface insulating layer 823r. These steps are similar to the method for manufacturing the semiconductor light emitting device 1A of the first embodiment shown in FIGS. 8 to 12.

Next, as shown in FIGS. 24 and 25, the method for manufacturing the semiconductor light emitting device 1B includes a step of forming a first resin layer 840A. This step is performed after the step of forming the wire W. The first resin layer 840A is a member forming the resin layer 40A that seals the semiconductor light emitting element 30 and the wire W. The first resin layer 840A is made of a translucent resin material, and in this embodiment, is made of a transparent epoxy resin. As shown in FIG. 24, the first resin layer 840A is formed to have a substantially trapezoidal shape when viewed from the y direction. As shown in FIG. 25, the first resin layer 840A seals a plurality of (three in this embodiment) semiconductor light emitting devices 30 arranged in the y direction and wires W individually connected to these semiconductor light emitting devices 30. It is formed to stop. In this embodiment, two first resin layers 840A are formed at intervals in the x direction. In this step, the first resin layer 840A is formed by, for example, transfer molding.

As shown in FIGS. 26 and 27, the method for manufacturing the semiconductor light emitting device 1B includes a step of forming a light shielding unit 50. As shown in FIGS. As shown in FIG. 26, the light shielding unit 50 is formed on the first resin main surface 840As of the first resin layer 840A. The light shielding unit 50 is formed, for example, by potting light shielding nylon onto the first resin main surface 840As using a dispenser device. As shown in FIG. 27, a plurality of light shielding units 50 are formed on the first resin main surface 840As. More specifically, the plurality of light blocking units 50 are individually formed so as to cover the entire main surface 30s of each semiconductor light emitting device 30.

As shown in FIGS. 28 and 29, the method for manufacturing the semiconductor light emitting device 1B includes a step of forming a second resin layer 840B. The second resin layer 840B is a member forming the resin layer 40B that covers the light shielding unit 50. The second resin layer 840B is made of a translucent resin material, and in this embodiment, is made of a transparent epoxy resin. That is, in this embodiment, the second resin layer 840B is made of the same material as the first resin layer 840A. As shown in FIG. 28, the second resin layer 840B is formed to have a substantially trapezoidal shape when viewed from the y direction. As shown in FIG. 29, the second resin layer 840B is formed to seal the plurality of light shielding units 50 arranged in the y direction. In this step, the second resin layer 840B is formed by, for example, transfer molding.

As shown in FIG. 30, the method for manufacturing a semiconductor light emitting device 1B includes a step of cutting a first resin layer 840A, a second resin layer 840B, and a base material 800. For example, the second resin layer 840B, the first resin layer 840A, and the base material 800 are cut by a dicing blade along the cutting line CL shown by the thick dashed line in FIG. Thereby, the sealing resin 40 and the substrate 10 are formed into individual pieces. Through the above steps, the semiconductor light emitting device 1B is manufactured.

(effect)
According to the semiconductor light emitting device 1B of this embodiment, in addition to the effects similar to (1-1) to (1-4) of the semiconductor light emitting device 1A of the first embodiment, the following effects can be obtained.

(2-1) The light shielding portion 51 is formed on the first resin main surface 40As of the first resin layer 40A that seals the semiconductor light emitting element 30 and the wire W. According to this configuration, since the first resin main surface 40As is located above the semiconductor light emitting element 30 and the wire W, it is possible to reliably prevent the light shielding part 51 from coming into contact with the semiconductor light emitting element 30 and the wire W. can.

(2-2) The light shielding unit 50 does not have the pair of supporting parts 52 because the light shielding part 51 is formed on the first resin main surface 40As. Therefore, the shape of the light shielding part 51 can be simplified, and the light shielding part 51 can be easily formed by potting or the like.

(2-3) The light shielding portion 51 does not have the convex portion 51a. The light shielding part 51 is formed into a thin plate shape. According to this configuration, since the size of the sealing resin 40 in the z direction can be reduced, the height of the semiconductor light emitting device 1A can be reduced.

[Third embodiment]
A semiconductor light emitting device 1C of the third embodiment will be described with reference to FIGS. 31 to 45. The semiconductor light emitting device 1C of this embodiment differs from the semiconductor light emitting device 1A of the first embodiment mainly in the number of semiconductor light emitting elements 30, the configuration of the substrate 10, and the configuration of the sealing resin 40. In the following description, components common to those of the semiconductor light emitting device 1A of the first embodiment are denoted by the same reference numerals, and the description thereof may be omitted.

(Configuration of semiconductor light emitting device)
The configuration of the semiconductor light emitting device 1C of this embodiment will be described with reference to FIGS. 31 to 36. As shown in FIG. 31, the semiconductor light emitting device 1C includes a first semiconductor light emitting element 30R, a second semiconductor light emitting element 30G, and a third semiconductor light emitting element 30B as a plurality of semiconductor light emitting elements 30, and the second semiconductor light emitting element 30G is The third semiconductor light emitting element 30B includes a Zener diode 33G for avoiding application of an excessive reverse voltage, and a Zener diode 33B for avoiding application of an excessive reverse voltage to the third semiconductor light emitting element 30B.

In this embodiment, the first semiconductor light emitting element 30R is a light emitting diode that emits red light, the second semiconductor light emitting element 30G is a light emitting diode that emits green light, and the third semiconductor light emitting element 30B is a light emitting diode that emits blue light. It is a light emitting diode that emits light. The semiconductor light emitting device 1C emits light of a color obtained by mixing the light emitted from each of the semiconductor light emitting elements 30R, 30G, and 30B, the light emitted from two of the semiconductor light emitting elements 30R, 30G, and 30B, and the light of each color. White light is emitted by mixing the emitted light from the semiconductor light emitting elements 30R, 30G, and 30B.

As shown in FIG. 33, the first semiconductor light emitting element 30R is configured as a one-wire type LED chip having, for example, a GaAs substrate and an AlGaInP semiconductor layer. A first electrode 31 (anode electrode) serving as a back electrode is formed on the first element back surface 30Rr of the first semiconductor light emitting element 30R, and a first electrode 31 (anode electrode) serving as a main surface electrode is formed on the element main surface 30Rs of the first semiconductor light emitting element 30R. A second electrode 32 (cathode electrode) is formed. Note that a high-brightness type light emitting diode in which a conductive substrate such as Ge (germanium) or Si (silicon) and an AlGaInP semiconductor layer are bonded with a metal layer (reflection layer) may be used as the first semiconductor light emitting element 30R. good. The shape of the element main surface 30Rs of the first semiconductor light emitting element 30R when viewed from above is a rectangular shape having a pair of first sides 30a extending in the x direction and a pair of second sides 30b extending in the y direction. In this embodiment, the shape of the element main surface 30Rs when viewed from above is a square. Further, in this embodiment, the element main surface 30Rs of the first semiconductor light emitting element 30R is a light emitting main surface of the first semiconductor light emitting element 30R that emits light. In other words, the first semiconductor light emitting element 30R emits light upward.

The second semiconductor light emitting element 30G is configured as a two-wire type LED chip having, for example, a sapphire substrate or a SiC substrate and a GaN-based semiconductor layer. A first electrode 31 (anode electrode) and a second electrode 32 (cathode electrode) are formed as two main surface electrodes on the main surface 30Gs of the second semiconductor light emitting device 30G. Note that as the second semiconductor light emitting element 30G, a high brightness type light emitting diode in which a conductive substrate such as Ge or Si and a GaN-based semiconductor layer are bonded with a metal layer (reflection layer) may be used. The shape of the element main surface 30Gs of the second semiconductor light emitting element 30G when viewed from above is a rectangular shape having a pair of first sides 30a extending in the x direction and a pair of second sides 30b extending in the y direction. In this embodiment, the shape of the element main surface 30Gs when viewed from above is a square. Further, in this embodiment, the element main surface 30Gs of the second semiconductor light emitting element 30G is a light emitting main surface of the second semiconductor light emitting element 30G that emits light. In other words, the second semiconductor light emitting element 30G emits light upward.

The third semiconductor light emitting element 30B is configured as a two-wire type LED chip having, for example, a sapphire substrate or a SiC substrate and a GaN-based semiconductor layer. A first electrode 31 (anode electrode) and a second electrode 32 (cathode electrode) are formed as two main surface electrodes on the main surface 30Bs of the third semiconductor light emitting device 30B. Note that as the third semiconductor light emitting element 30B, a high brightness type light emitting diode in which a conductive substrate such as germanium or silicon and a GaN-based semiconductor layer are bonded with a metal layer (reflection layer) may be used. The shape of the element main surface 30Bs of the third semiconductor light emitting element 30B when viewed from above is a rectangular shape having a pair of first sides 30a extending in the x direction and a pair of second sides 30b extending in the y direction. In this embodiment, the shape of the element main surface 30Bs when viewed from above is a square. Further, in this embodiment, the element main surface 30Bs of the third semiconductor light emitting element 30B is a light emitting main surface of the third semiconductor light emitting element 30B that emits light. In other words, the third semiconductor light emitting element 30B emits light upward.

As shown in FIG. 31, the Zener diode 33G is electrically connected to the second semiconductor light emitting element 30G. In this embodiment, the Zener diode 33G is connected in antiparallel to the second semiconductor light emitting element 30G. More specifically, the Zener diode 33G has a main surface electrode (anode electrode) and a back surface electrode (cathode electrode). The main surface electrode of the Zener diode 33G is electrically connected to the second electrode 32 (cathode electrode) of the second semiconductor light emitting element 30G, and the back surface electrode of the Zener diode 33G is connected to the first electrode 31 of the second semiconductor light emitting element 30G. (anode electrode).

Zener diode 33B is electrically connected to third semiconductor light emitting element 30B. In this embodiment, the Zener diode 33B is connected in antiparallel to the third semiconductor light emitting element 30B. More specifically, the Zener diode 33B has a main surface electrode (anode electrode) and a back surface electrode (cathode electrode). The main surface electrode of the Zener diode 33B is electrically connected to the second electrode 32 (cathode electrode) of the third semiconductor light emitting element 30B, and the back surface electrode of the Zener diode 33B is connected to the first electrode 31 of the third semiconductor light emitting element 30B. (anode electrode).

The semiconductor light emitting device 1C includes a lead 60 that supports each semiconductor light emitting element 30R, 30G, 30B and each Zener diode 33G, 33B, a holding member 70 (see FIG. 32) that holds the lead 60, and each semiconductor light emitting element 30R, 30G, 30B and a transparent sealing resin 80 for sealing each Zener diode 33G, 33B. In this embodiment, the lead 60 and the holding member 70 constitute the substrate. In the following description, in the z direction, the direction from the holding member 70 (lead 60) to the sealing resin 80 may be referred to as upward, and the direction from the sealing resin 80 to the holding member 70 (lead 60) may be referred to as downward. .

As shown in FIGS. 31 and 32, the holding member 70 is made of an electrically insulating material, and in this embodiment is made of, for example, black epoxy resin. The holding member 70 is formed into a flat plate shape. The shape of the holding member 70 when viewed from above is rectangular. The holding member 70 includes a main surface 70s and a back surface 70r (see FIG. 34) facing opposite to each other in the z direction, and four side surfaces 71 to 74 provided between the main surface 70s and the back surface 70r in the z direction. have.

The side surface 71 and the side surface 72 are surfaces facing opposite to each other in the x direction. When viewed from above, side surface 71 and side surface 72 each extend along the y direction. The side surface 73 and the side surface 74 are surfaces facing oppositely to each other in the y direction. When viewed from above, side surface 73 and side surface 74 each extend along the x direction.

The lead 60 constitutes a terminal of the semiconductor light emitting device 1C. The lead 60 is made of, for example, Cu, Ni, or an alloy thereof. The lead 60 includes an anode lead 60A that constitutes an anode terminal of each semiconductor light emitting element 30R, 30G, 30B, and a cathode lead 60K that constitutes a cathode terminal of each semiconductor light emitting element 30R, 30G, 30B. There is.

The anode lead 60A is arranged closer to the side surface 72 of the holding member 70 in the x direction. More specifically, the anode lead 60A is arranged closer to the side surface 72 than to the center of the holding member 70 in the x direction. The anode lead 60A is connected to the first anode lead 60AR, which is connected to the first electrode 31 (anode electrode) of the first semiconductor light emitting element 30R, and to the first electrode 31 (anode electrode) of the second semiconductor light emitting element 30G. and a third anode lead 60AB connected to the first electrode 31 (anode electrode) of the third semiconductor light emitting element 30B. The first anode lead 60AR, the second anode lead 60AG, and the third anode lead 60AB are aligned in the x direction and spaced apart from each other in the y direction. The first anode lead 60AR is arranged at the center of the holding member 70 in the y direction. The second anode lead 60AG is arranged closer to the side surface 74 than the first anode lead 60AR in the y direction. The third anode lead 60AB is arranged closer to the side surface 73 than the first anode lead 60AR in the y direction. Each anode lead 60AR, 60AG, 60AB is electrically insulated from each other by a holding member 70.

The first anode lead 60AR extends in the x direction. The first anode lead 60AR has a first anode terminal portion 61AR and a first anode support portion 62AR. In this embodiment, the first anode lead 60AR is a single component in which the first anode terminal portion 61AR and the first anode support portion 62AR are integrally formed. In the x direction, the first anode terminal portion 61AR is located near the side surface 72 of the holding member 70, and the first anode support portion 62AR is located near the center of the holding member 70 in the x direction. The tip of the first anode terminal portion 61AR protrudes from the side surface 72 of the holding member 70 in the x direction. As shown in FIG. 32, the entire first anode terminal portion 61AR is exposed from the back surface 70r of the holding member 70 when viewed from below.

As shown in FIG. 31, the first anode support portion 62AR is a dotted portion of the first anode lead 60AR. In the present embodiment, the width of the first anode support section 62AR (the size of the first anode support section 62AR in the y direction) is the same as the width of the first anode terminal section 61AR (the size of the first anode terminal section 61AR). (size in the y direction). As shown in FIG. 34, the thickness of the first anode support part 62AR (the size of the first anode support part 62AR in the z direction) is the thickness of the first anode terminal part 61AR (the size of the first anode terminal part 61AR in the z direction). (size in direction). The surface of the first anode support part 62AR facing the same side as the main surface 70s of the holding member 70 and the surface of the first anode support part 62AR facing the same side as the main surface 70s of the holding member 70 are flush with each other. . The surface of the first anode support portion 62AR facing the same side as the back surface 70r of the holding member 70 is covered by the holding member 70. Therefore, as shown in FIG. 32, the first anode support portion 62AR is not exposed from the back surface 70r of the holding member 70 when viewed from below.

As shown in FIGS. 31 and 33, the first anode support section 62AR supports the first semiconductor light emitting element 30R. More specifically, the first semiconductor light emitting element 30R is mounted on the first anode support portion 62AR via a conductive bonding material BJ such as solder or Ag paste. In this embodiment, the first semiconductor light emitting element 30R is arranged near the tip of the first anode support part 62AR in the x direction.

The second anode lead 60AG extends in the x direction. The second anode lead 60AG has a second anode terminal portion 61AG and a second anode support portion 62AG. In this embodiment, the second anode lead 60AG is a single component in which the second anode terminal portion 61AG and the second anode support portion 62AG are integrally formed. In the x direction, the second anode terminal portion 61AG is located near the side surface 72 of the holding member 70, and the second anode support portion 62AG is located near the center of the holding member 70 in the x direction. The tip of the second anode terminal portion 61AG protrudes from the side surface 72 of the holding member 70 in the x direction. As shown in FIG. 32, the entire second anode terminal portion 61AG is exposed from the back surface 70r of the holding member 70 when viewed from below.

As shown in FIG. 31, the second anode support portion 62AG is a dotted portion of the second anode lead 60AG. In this embodiment, the width of the second anode support section 62AG (the size of the second anode support section 62AG in the y direction) is the same as the width of the second anode terminal section 61AG (the size of the second anode terminal section 61AG). (size in the y direction). Although not shown, like the first anode lead 60AR, the thickness of the second anode support part 62AG (the size of the second anode support part 62AG in the z direction) is the same as the thickness of the second anode terminal part 61AG. (the size of the second anode terminal portion 61AG in the z direction). The surface of the second anode support portion 62AG that faces the same side as the main surface 70s of the holding member 70 and the surface of the second anode terminal portion 61AG that faces the same side as the main surface 70s of the holding member 70 are flush with each other. . The surface of the second anode support portion 62AG facing the same side as the back surface 70r of the holding member 70 is covered by the holding member 70. Therefore, as shown in FIG. 32, the second anode support portion 62AG is not exposed from the back surface 70r of the holding member 70 when viewed from below.

As shown in FIG. 31, the second anode support section 62AG supports the Zener diode 33G. More specifically, the Zener diode 33G is mounted on the second anode support portion 62AG via, for example, a conductive bonding material BJ. That is, the back electrode (anode electrode) of the Zener diode 33G is connected to the second anode support portion 62AG via the conductive bonding material BJ. Thereby, the back electrode (anode electrode) of the Zener diode 33G and the second anode lead 60AG are electrically connected. In this embodiment, the Zener diode 33G is arranged closer to the side surface 74 of the holding member 70 than the first semiconductor light emitting element 30R in the y direction, and closer to the side surface 74 of the holding member 70 than the first semiconductor light emitting element 30R in the x direction. It is arranged near the side surface 72.

As shown in FIG. 31, the third anode lead 60AB extends in the x direction. The third anode lead 60AB has a third anode terminal portion 61AB and a third anode support portion 62AB. In this embodiment, the third anode lead 60AB is a single component in which the third anode terminal portion 61AB and the third anode support portion 62AB are integrally formed. In the x direction, the third anode terminal portion 61AB is located near the side surface 72 of the holding member 70, and the third anode support portion 62AB is located near the center of the holding member 70 in the x direction. The tip of the third anode terminal portion 61AB protrudes from the side surface 72 of the holding member 70 in the x direction. As shown in FIG. 32, the entire third anode terminal portion 61AB is exposed from the back surface 70r of the holding member 70 when viewed from below.

As shown in FIG. 31, the third anode support portion 62AB is a dotted portion of the third anode lead 60AB. In this embodiment, the width of the third anode support portion 62AB (the size of the third anode support portion 62AB in the y direction) is the width of the third anode terminal portion 61AB (the size of the third anode terminal portion 61AB). (size in the y direction). Although not shown, similarly to the first anode lead 60AR, the thickness of the third anode support portion 62AB (the size of the third anode support portion 62AB in the z direction) is equal to the thickness of the third anode terminal portion 61AB. (the size of the third anode terminal portion 61AB in the z direction). The surface of the third anode support portion 62AB that faces the same side as the main surface 70s of the holding member 70 and the surface of the third anode terminal portion 61AB that faces the same side as the main surface 70s of the holding member 70 are flush with each other. . The surface of the third anode support portion 62AB facing the same side as the back surface 70r of the holding member 70 is covered by the holding member 70. Therefore, as shown in FIG. 32, the third anode support portion 62AB is not exposed from the back surface 70r of the holding member 70 when viewed from below.

As shown in FIG. 31, the third anode support portion 62AB supports the Zener diode 33B. More specifically, the Zener diode 33B is mounted on the third anode support portion 62AB via, for example, a conductive bonding material BJ. That is, the back electrode (anode electrode) of the Zener diode 33B is connected to the third anode support portion 62AB via the conductive bonding material BJ. Thereby, the back electrode (anode electrode) of the Zener diode 33B and the third anode lead 60AB are electrically connected. In this embodiment, the Zener diode 33B is arranged closer to the side surface 73 of the holding member 70 than the first semiconductor light emitting element 30R in the y direction, and closer to the side surface 73 of the holding member 70 than the first semiconductor light emitting element 30R in the x direction. It is arranged near the side surface 72. Furthermore, the Zener diode 33B is aligned with the Zener diode 33G in the x direction.

The cathode lead 60K is arranged closer to the side surface 71 of the holding member 70 in the x direction. More specifically, the cathode lead 60K is arranged closer to the side surface 71 than the center of the holding member 70 in the x direction. The cathode lead 60K is connected to the first cathode lead 60KR, which is connected to the second electrode 32 (cathode electrode) of the first semiconductor light emitting element 30R, and the second electrode 32 (cathode electrode) of the second semiconductor light emitting element 30G. and a third cathode lead 60KB connected to the second electrode 32 (cathode electrode) of the third semiconductor light emitting element 30B. The first cathode lead 60KR, the second cathode lead 60KG, and the third cathode lead 60KB are arranged apart from each other in the y direction. The first cathode lead 60KR is arranged at the center of the holding member 70 in the y direction. The second cathode lead 60KG is arranged closer to the side surface 74 than the first cathode lead 60KR in the y direction. The third cathode lead 60KB is arranged closer to the side surface 73 than the first cathode lead 60KR in the y direction. The cathode leads 60KR, 60KG, and 60KB are electrically insulated from each other by the holding member 70.

The first cathode lead 60KR extends in the x direction. The shape of the first cathode lead 60KR when viewed from above is T-shaped. The first cathode lead 60KR has a first cathode terminal portion 61KR and a first cathode support portion 62KR. In this embodiment, the first cathode lead 60KR is a single component in which the first cathode terminal portion 61KR and the first cathode support portion 62KR are integrally formed. In the x direction, the first cathode terminal portion 61KR is located near the side surface 71 of the holding member 70, and the first cathode support portion 62KR is located near the center of the holding member 70 in the x direction. The tip of the first cathode terminal portion 61KR protrudes from the side surface 71 of the holding member 70 in the x direction. As shown in FIG. 32, the entire first cathode terminal portion 61KR is exposed from the back surface 70r of the holding member 70 when viewed from below. In the y direction, the first cathode terminal portion 61KR is aligned with the first anode terminal portion 61AR of the first anode lead 60AR.

As shown in FIG. 31, the first cathode support portion 62KR is a dotted portion of the first cathode lead 60KR. In this embodiment, the width of the first cathode support portion 62KR (the size of the first cathode support portion 62KR in the y direction) is the same as the width of the first cathode terminal portion 61KR (the size of the first cathode support portion 61KR). (size in the y direction). As shown in FIG. 34, the thickness of the first cathode support part 62KR (the size of the first cathode support part 62KR in the z direction) is the thickness of the first cathode terminal part 61KR (the size of the first cathode terminal part 61KR in the z direction). (size in direction). The surface of the first cathode support part 62KR that faces the same side as the main surface 70s of the holding member 70 and the surface of the first cathode support part 62KR that faces the same side as the main surface 70s of the holding member 70 are flush with each other. . The surface of the first cathode support portion 62KR facing the same side as the back surface 70r of the holding member 70 is covered by the holding member 70. Therefore, as shown in FIG. 32, the first cathode support portion 62KR is not exposed from the back surface 70r of the holding member 70 when viewed from below.

As shown in FIG. 31, the first cathode lead 60KR and the second electrode 32 of the first semiconductor light emitting element 30R are connected by a conductive wire W1. Thereby, the first cathode lead 60KR and the second electrode 32 of the first semiconductor light emitting element 30R are electrically connected.

As shown in FIG. 31, the shape of the second cathode lead 60KG when viewed from above is L-shaped. The second cathode lead 60KG is formed to surround the first cathode lead 60KR from the side surface 74 of the holding member 70 in the y direction and from the side surface 72 of the holding member 70 in the x direction. The second cathode lead 60KG has a second cathode terminal portion 61KG and a second cathode support portion 62KG. In this embodiment, the second cathode lead 60KG is a single component in which the second cathode terminal portion 61KG and the second cathode support portion 62KG are integrally formed. In the x direction, the second cathode terminal portion 61KG is located near the side surface 71 of the holding member 70, and the second cathode support portion 62KG is located near the center of the holding member 70 in the x direction. The tip of the second cathode terminal portion 61KG protrudes from the side surface 71 of the holding member 70 in the x direction. As shown in FIG. 32, like the first cathode lead 60KR, the entire second cathode terminal portion 61KG is exposed from the back surface 70r of the holding member 70 when viewed from below. In the y direction, the second cathode terminal portion 61KG is aligned with the second anode terminal portion 61AG of the second anode lead 60AG.

As shown in FIG. 31, the second cathode support portion 62KG has an L-shape when viewed from above. That is, the second cathode support part 62KG includes a first part of the first cathode lead 60KR that overlaps with the first cathode support part 62KR when viewed from the y direction, and a second part that overlaps with the first cathode support part 62KR when seen from the x direction. It has a part. This second portion is located between the first cathode lead 60KR and the first anode lead 60AR in the x direction. In this embodiment, the width of the second cathode support portion 62KG (the size of the second cathode support portion 62KG in the y direction) is the width of the second cathode terminal portion 61KG (the size of the second cathode support portion 61KG). (size in the y direction). Although not shown, like the first cathode lead 60KR, the thickness of the second cathode support part 62KG (the size of the second cathode support part 62KG in the z direction) is the same as the thickness of the second cathode terminal part 61KG. (the size of the second cathode terminal portion 61KG in the z direction). The surface of the second cathode support part 62KG that faces the same side as the main surface 70s of the holding member 70 and the surface of the second cathode support part 62KG that faces the same side as the main surface 70s of the holding member 70 are flush with each other. . The surface of the second cathode support portion 62KG facing the same side as the back surface 70r of the holding member 70 is covered by the holding member 70. Therefore, as shown in FIG. 32, the second cathode support portion 62KG is not exposed from the back surface 70r of the holding member 70 when viewed from below.

As shown in FIG. 31, the second cathode support portion 62KG supports the second semiconductor light emitting element 30G. More specifically, the second semiconductor light emitting element 30G is mounted on the second cathode support portion 62KG via a conductive bonding material BJ. The second semiconductor light emitting element 30G is arranged closer to the center of the holding member 70 in the y direction than the second cathode terminal portion 61KG. The second semiconductor light emitting element 30G is arranged between the first cathode lead 60KR and the first anode lead 60AR in the x direction.

The first electrode 31 (anode electrode) of the second semiconductor light emitting element 30G and the second anode lead 60AG are connected by a conductive wire W2. More specifically, the wire W2 connected to the first electrode 31 of the second semiconductor light emitting element 30G is connected to the second cathode lead 60KG more than the Zener diode 33G in the second anode support part 62AG of the second anode lead 60AG. It is connected to the nearby part. Thereby, the first electrode 31 of the second semiconductor light emitting element 30G and the second anode lead 60AG are electrically connected.

The second electrode 32 (cathode electrode) of the second semiconductor light emitting element 30G and the second cathode lead 60KG are connected by a wire W3. More specifically, the wire W3 connected to the second electrode 32 of the second semiconductor light emitting element 30G is connected to the boundary between the second cathode support part 62KG and the second cathode terminal part 61KG of the second cathode lead 60KG. has been done. Thereby, the second electrode 32 of the second semiconductor light emitting element 30G and the second cathode lead 60KG are electrically connected.

As shown in FIG. 31, the third cathode lead 60KB has an L-shape when viewed from above. The third cathode lead 60KB is formed to surround the first cathode lead 60KR from the side surface 73 of the holding member 70 in the y direction and from the side surface 72 of the holding member 70 in the x direction. The third cathode lead 60KB has a third cathode terminal portion 61KB and a third cathode support portion 62KB. In this embodiment, the third cathode lead 60KB is a single component in which the third cathode terminal portion 61KB and the third cathode support portion 62KB are integrally formed. In the x direction, the third cathode terminal portion 61KB is located near the side surface 71 of the holding member 70, and the third cathode support portion 62KB is located near the center of the holding member 70 in the x direction. The tip of the third cathode terminal portion 61KB protrudes from the side surface 71 of the holding member 70 in the x direction. As shown in FIG. 32, similarly to the first cathode lead 60KR, the third cathode terminal portion 61KB is entirely exposed from the back surface 70r of the holding member 70 when viewed from below. In the y direction, the third cathode terminal portion 61KB is aligned with the third anode terminal portion 61AB of the third anode lead 60AB.

As shown in FIG. 31, the third cathode support portion 62KB has an L-shape when viewed from above. That is, the third cathode support part 62KB includes a first part of the first cathode lead 60KR that overlaps with the first cathode support part 62KR when viewed from the y direction, and a second part that overlaps with the first cathode support part 62KR when seen from the x direction. It has a part. This second portion is located between the first cathode lead 60KR and the first anode lead 60AR in the x direction. In this embodiment, the width of the third cathode support portion 62KB (the size of the third cathode support portion 62KB in the y direction) is the width of the third cathode terminal portion 61KB (the size of the third cathode support portion 61KB). (size in the y direction). Although not shown, like the first cathode lead 60KR, the thickness of the third cathode support part 62KB (the size of the third cathode support part 62KB in the z direction) is the same as the thickness of the third cathode terminal part 61KB. (The size of the third cathode terminal portion 61KB in the z direction). The surface of the third cathode support part 62KB that faces the same side as the main surface 70s of the holding member 70 and the surface of the third cathode support part 62KB that faces the same side as the main surface 70s of the holding member 70 are flush with each other. . The surface of the third cathode support portion 62KB facing the same side as the back surface 70r of the holding member 70 is covered by the holding member 70. Therefore, as shown in FIG. 32, the third cathode support portion 62KB is not exposed from the back surface 70r of the holding member 70 when viewed from below.

As shown in FIG. 31, the third cathode support portion 62KB supports the third semiconductor light emitting element 30B. More specifically, the third semiconductor light emitting element 30B is mounted on the third cathode support portion 62KB via a conductive bonding material BJ. The third semiconductor light emitting element 30B is arranged closer to the center of the holding member 70 in the y direction than the third cathode terminal portion 61KB. The third semiconductor light emitting element 30B is arranged between the first cathode lead 60KR and the first anode lead 60AR in the x direction.

The first electrode 31 (anode electrode) of the third semiconductor light emitting element 30B and the third anode lead 60AB are connected by a wire W4. More specifically, the wire W4 connected to the first electrode 31 of the third semiconductor light emitting element 30B is connected to the third cathode lead 60KB from the Zener diode 33B of the third anode support part 62AB of the third anode lead 60AB. It is connected to the nearby part. Thereby, the first electrode 31 of the third semiconductor light emitting element 30B and the third anode lead 60AB are electrically connected.

The second electrode 32 (cathode electrode) of the third semiconductor light emitting element 30B and the third cathode lead 60KB are connected by a wire W5. More specifically, the wire W5 connected to the second electrode 32 of the third semiconductor light emitting element 30B is connected to the boundary between the third cathode support part 62KB and the third cathode terminal part 61KB of the third cathode lead 60KB. has been done. Thereby, the second electrode 32 of the third semiconductor light emitting element 30B and the third cathode lead 60KB are electrically connected.

The surface electrode (cathode electrode) of the Zener diode 33G and the second cathode lead 60KG are connected by a wire W6. More specifically, the wire W6 connected to the surface electrode of the Zener diode 33G is connected to the second cathode support portion 62KG of the second cathode lead 60KG. Thereby, the surface electrode (cathode electrode) of the Zener diode 33G and the second cathode lead 60KG are electrically connected.

The surface electrode (cathode electrode) of the Zener diode 33B and the third cathode lead 60KB are connected by a wire W7. More specifically, the wire W7 connected to the surface electrode of the Zener diode 33B is connected to the third cathode support portion 62KB of the third cathode lead 60KB. Thereby, the surface electrode (cathode electrode) of the Zener diode 33B and the third cathode lead 60KB are electrically connected.

Each of the above-mentioned wires W1 to W7 is made of a conductive metal material, such as Au, Al, or Cu. Each of the wires W1 to W7 is formed by wire bonding.

The sealing resin 80 is made of a transparent or semitransparent material, and in this embodiment, it is made of a transparent epoxy resin. As shown in FIGS. 34 to 36, the sealing resin 80 is disposed on the lead 60 and the main surface 70s of the holding member 70. The sealing resin 80 is formed into a rectangular parallelepiped shape.

The sealing resin 80 has a main resin surface 80s facing the same side in the z direction as the main surface 70s of the holding member 70, and resin side surfaces 81 to 84 (see FIG. 31). As shown in FIG. 31, the resin side surface 81 and the resin side surface 82 face oppositely to each other in the x direction. The resin side surface 81 faces the same side as the side surface 71 of the holding member 70, and the resin side surface 82 faces the same side as the side surface 72 of the holding member 70. When viewed from above, resin side surface 81 and resin side surface 82 each extend along the y direction. In this embodiment, the resin side surface 81 is flush with the side surface 71 of the holding member 70, and the resin side surface 82 is flush with the side surface 72 of the holding member 70. The resin side surface 83 and the resin side surface 84 face opposite to each other in the y direction. The resin side surface 83 faces the same side as the side surface 73 of the holding member 70, and the resin side surface 84 faces the same side as the side surface 74 of the holding member 70. When viewed from above, resin side surface 83 and resin side surface 84 each extend along the x direction. In this embodiment, the resin side surface 83 is flush with the side surface 73 of the holding member 70, and the resin side surface 84 is flush with the side surface 74 of the holding member 70.

As shown in FIG. 31, the semiconductor light emitting device 1C includes a plurality of light shielding units 50. In the present embodiment, the semiconductor light emitting device 1C includes a first light shielding unit 50R that blocks light emitted upward from the first semiconductor light emitting element 30R, and a first light shielding unit 50R that blocks light emitted upward from the first semiconductor light emitting element 30G, as a plurality of light shielding units 50; It has a second light-shielding unit 50G that blocks light emitted upward from the third semiconductor light-emitting element 30B, and a third light-shielding unit 50B that blocks light emitted upward from the third semiconductor light-emitting element 30B. These light blocking units 50R, 50G, and 50B block visible light and infrared light, and are made of, for example, liquid crystal polymer, nylon, silicon, metal material, or the like. In this embodiment, each light shielding unit 50R, 50G, 50B is made of white liquid crystal polymer. Note that each of the light shielding units 50R, 50G, and 50B is not limited to white, and may be of another color (for example, black).

As shown in FIG. 34, the first light shielding unit 50R is arranged above and apart from the first semiconductor light emitting element 30R. In this embodiment, the first light shielding unit 50R is arranged closer to the resin main surface 80s in the z direction than the part of the wire W1 that is closest to the resin main surface 80s in the z direction. In other words, the first light shielding unit 50R is arranged above and apart from the wire W1. In this embodiment, the first light shielding unit 50R is embedded in the sealing resin 80. That is, the first light shielding unit 50R is arranged inside the sealing resin 80.

The first light blocking unit 50R includes a light blocking portion 51R and a pair of support portions 52R. In this embodiment, the first light blocking unit 50R is a single component in which a light blocking portion 51R and a pair of support portions 52R are integrally formed.

As shown in FIG. 33, the light shielding part 51R is disposed apart from the first semiconductor light emitting element 30R upward in the z direction away from the element main surface 30Rs. The light shielding part 51R is arranged above the wire W1. More specifically, the light shielding portion 51R is arranged closer to the resin main surface 80s than the part of the wire W1 that is closest to the resin main surface 80s in the z direction. The light shielding portion 51R is disposed apart from the portion of the wire W1 that is closest to the main resin surface 80s in the z direction. The light shielding part 51R is embedded in the sealing resin 80. That is, the light shielding part 51R is arranged inside the sealing resin 80.

As shown in FIG. 31, the light shielding part 51R is arranged at the center of the holding member 70 in the y direction. The light shielding portion 51R is arranged closer to the resin side surface 82 than the center of the sealing resin 80 in the x direction. As shown in FIG. 33, the light shielding portion 51R is arranged to cover the entire main surface 30Rs of the first semiconductor light emitting device 30R when viewed from above. In the present embodiment, when viewed from above, the area of the light shielding portion 51R is larger than the area of the element main surface 30Rs of the first semiconductor light emitting element 30R. The shape of the light shielding portion 51R when viewed from above is a rectangular shape, and is similar to the shape of the element main surface 30Rs of the first semiconductor light emitting element 30R when viewed from above. That is, in this embodiment, the shape of the light shielding part 51R when viewed from above is a square.

The light shielding portion 51R includes a protruding region Rr1 that protrudes toward the resin side surface 81 (see FIG. 31) of the sealing resin 80 in the x direction with respect to the element main surface 30Rs of the first semiconductor light emitting element 30R, and a protruding region Rr1 that protrudes toward the resin side surface 81 (see FIG. 31) of the sealing resin 80 with respect to the element main surface 30Rs of the first semiconductor light emitting element 30R. In contrast, there is a protruding region Rr2 that protrudes toward the resin side surface 82 of the sealing resin 80 (see FIG. 31) in the x direction, and a resin side surface 83 of the sealing resin 80 in the y direction with respect to the element main surface 30Rs (see FIG. 31). (see FIG. 31), and a protrusion region Rr4 that protrudes toward the resin side surface 84 (see FIG. 31) of the sealing resin 80 in the y direction with respect to the element main surface 30Rs.

The protruding region Rr1 is a portion of the region protruding in the x direction from the second side 30b of the element main surface 30Rs of the first semiconductor light emitting element 30R, which is closer to the resin side surface 81 of the sealing resin 80 than the element main surface 30Rs. . The protruding region Rr2 is a portion of the region protruding in the x direction from the second side 30b of the element main surface 30Rs of the first semiconductor light emitting element 30R, which is closer to the resin side surface 82 of the sealing resin 80 than the element main surface 30Rs. . The protruding region Rr3 is a portion of the region protruding in the y direction from the first side 30a of the element main surface 30Rs of the first semiconductor light emitting element 30R, which is closer to the resin side surface 83 of the sealing resin 80 than the element main surface 30Rs. . The protruding region Rr4 is a portion of the region protruding in the y direction from the first side 30a of the element main surface 30Rs of the first semiconductor light emitting element 30R, which is closer to the resin side surface 84 of the sealing resin 80 than the element main surface 30Rs. .

According to such protruding regions Rr1 to Rr4, the protruding regions overlap each other at the four corners of the light shielding portion 51R when viewed from above. That is, in the corner portion of the light shielding portion 51R near the resin side surface 81 and the resin side surface 83 of the sealing resin 80, the protrusion region Rr1 and the protrusion region Rr3 overlap. In the corner portion of the light shielding portion 51R near the resin side surface 81 and the resin side surface 84 of the sealing resin 80, the protrusion region Rr1 and the protrusion region Rr4 overlap. In the corner portion of the light shielding portion 51R near the resin side surface 82 and the resin side surface 83 of the sealing resin 80, a protruding region Rr2 and a protruding region Rr3 overlap. In the corner portion of the light shielding portion 51R near the resin side surface 82 and the resin side surface 84 of the sealing resin 80, the protruding region Rr2 and the protruding region Rr4 overlap.

As shown in FIG. 33, in this embodiment, the center position CXr of the light shielding part 51R is the same as the center position CAr of the first semiconductor light emitting element 30R. As a result, when viewed from above, the area of the protruding region Rr1, the area of the protruding region Rr2, the area of the protruding region Rr3, and the area of the protruding region Rr4 are each equal to each other. In other words, the areas of each of the protruding regions Rr1 to Rr4 are the same.

Here, the center position CAr of the first semiconductor light emitting element 30R is the center position of the main surface 30Rs of the first semiconductor light emitting element 30R in the x direction and the y direction when viewed from above. Further, if the amount of deviation between the center position CXr of the light shielding part 51R and the center position CAr of the first semiconductor light emitting element 30R is within 5% of the length in the x direction or the length in the y direction of the light shielding part 51R, the light shielding It can be said that the center position CXr of the portion 51R is the same as the center position CAr of the first semiconductor light emitting element 30R. Further, if the difference between the area of the protruding region Rr1, the area of the protruding region Rr2, the area of the protruding region Rr3, and the area of the protruding region Rr4 is within 10% of the protruding region Rr1, then the area of the protruding region Rr1 is , it can be said that the area of the protruding region Rr2, the area of the protruding region Rr3, and the area of the protruding region Rr4 are each equal to each other.

As shown in FIG. 34, the light shielding portion 51R has a convex portion 51Ra that protrudes toward the first semiconductor light emitting element 30R. The protrusion 51Ra has a curved surface that protrudes toward the first semiconductor light emitting element 30R. In this embodiment, the convex portion 51Ra has a spherical surface that protrudes toward the first semiconductor light emitting element 30R. As shown in FIG. 34, the spherical surface of the convex portion 51Ra is formed to be closest to the first semiconductor light emitting element 30R at the center position CXr of the light shielding portion 51R.

In this embodiment, the surface of the light shielding part 51R opposite to the convex part 51Ra in the z direction, that is, the upper surface 51Rb of the light shielding part 51R facing the same side as the main resin surface 80s, is separated from the flat surface perpendicular to the z direction. Become.

As shown in FIG. 31, the pair of support parts 52R are arranged at the center of the holding member 70 in the y direction. The pair of support portions 52R extend along the x direction from both ends of the light shielding portion 51R in the x direction. The pair of support portions 52R are formed into a flat plate shape. The plate thickness of the pair of support parts 52R is thinner than the thickness of the light shielding part 51R (the length in the z direction from the upper surface 51Rb of the light shielding part 51R to the tip surface of the convex part 51Ra). The shape of each support portion 52R when viewed from above is a band shape extending in the x direction. The pair of support portions 52R includes a support portion 52RA extending toward the resin side surface 81 of the sealing resin 80 and a support portion 52RB extending toward the resin side surface 82 of the sealing resin 80. The distal end surface of the support portion 52RA in the x direction is exposed from the resin side surface 81 of the sealing resin 80, and the distal end surface of the support portion 52RB in the x direction is exposed from the resin side surface 82 of the sealing resin 80. In this embodiment, the length of the support portion 52RA in the x direction is longer than the length of the support portion 52RB in the x direction.

As shown in FIG. 34, the upper surface 52Ra of the pair of support parts 52R facing away from the holding member 70 in the z direction is flush with the upper surface 51Rb of the light shielding part 51R. Note that the position of the pair of support parts 52R in the z direction with respect to the light shielding part 51R can be changed arbitrarily. In one example, in the z direction, the upper surface 52Ra of the pair of support parts 52R may be located below or above the upper surface 51Rb of the light shielding part 51R.

As shown in FIG. 35, the second light shielding unit 50G is arranged above and apart from the second semiconductor light emitting element 30G. In this embodiment, the second light shielding unit 50G is arranged closer to the resin main surface 80s in the z direction than the part of the wires W2 (see FIG. 31) and W3 that is closest to the resin main surface 80s in the z direction. There is. That is, the second light shielding unit 50G is arranged above and apart from the wires W2 and W3. In this embodiment, the second light shielding unit 50G is embedded in the sealing resin 80. That is, the second light shielding unit 50G is arranged inside the sealing resin 80.

The second light blocking unit 50G includes a light blocking portion 51G and a pair of support portions 52G. In this embodiment, the second light blocking unit 50G is a single component in which a light blocking portion 51G and a pair of support portions 52G are integrally formed.

As shown in FIG. 34, the light shielding portion 51G is disposed apart from the second semiconductor light emitting element 30G upward in the z direction away from the element main surface 30Gs. The light shielding part 51G is arranged above the wires W2 and W3. More specifically, the light shielding portion 51G is arranged closer to the resin main surface 80s than the portion of the wires W2 and W3 (see FIG. 31) that is closest to the resin main surface 80s in the z direction. The light shielding portion 51G is arranged to be spaced apart in the z direction from the portion of the wires W2 and W3 that is closest to the main resin surface 80s in the z direction. The light shielding part 51G is embedded in the sealing resin 80. That is, the light shielding part 51G is arranged inside the sealing resin 80.

As shown in FIG. 31, the light shielding part 51G is arranged closer to the resin side surface 81 of the sealing resin 80 than the light shielding part 51R of the first light shielding unit 50R in the x direction. The light shielding part 51G is arranged closer to the resin side surface 84 of the sealing resin 80 than the light shielding part 51R is in the y direction. When viewed from the x direction, the end of the light shielding portion 51G in the y direction, which is closer to the resin side surface 83 of the sealing resin 80, is closer to the resin side surface 83 of the light shielding portion 51R in the y direction. It is arranged so as to overlap with the end portion closer to the resin side surface 84 of. The light shielding portion 51G is arranged to cover the entire main surface 30Gs of the second semiconductor light emitting device 30G when viewed from above.

In this embodiment, when viewed from above, the area of the light shielding portion 51G is larger than the area of the element main surface 30Gs of the second semiconductor light emitting element 30G. The shape of the light shielding portion 51G when viewed from above is a rectangular shape, and is similar to the shape of the element main surface 30Gs of the second semiconductor light emitting element 30G when viewed from above. That is, in this embodiment, the shape of the light shielding part 51G when viewed from above is a square. In this embodiment, the area of the light shielding part 51G viewed from above is smaller than the area of the light shielding part 51R of the first light shielding unit 50R viewed from above. Note that the size of the area of the light shielding portion 51G viewed from above can be arbitrarily changed. In one example, the area of the light shielding part 51G viewed from above may be equal to the area of the light shielding part 51R viewed from above.

As shown in FIG. 33, the light shielding portion 51G includes a protruding region Rg1 that protrudes toward the resin side surface 81 of the sealing resin 80 (see FIG. 31) in the x direction with respect to the main surface 30Gs of the second semiconductor light emitting device 30G. , a protruding region Rg2 that protrudes toward the resin side surface 82 (see FIG. 31) of the sealing resin 80 in the x direction with respect to the element main surface 30Gs, and a protruding region Rg2 of the sealing resin 80 in the y direction with respect to the element main surface 30Gs. A protruding region Rg3 protrudes toward the resin side surface 83 (see FIG. 31) of the encapsulating resin 80 in the y direction with respect to the element main surface 30Gs. ,have.

The protruding region Rg1 is a portion of the region protruding in the x direction from the second side 30b of the element main surface 30Gs of the second semiconductor light emitting element 30G, which is closer to the resin side surface 81 of the sealing resin 80 than the element main surface 30Gs. . The protruding region Rg2 is a portion of the region protruding in the x direction from the second side 30b of the element main surface 30Gs of the second semiconductor light emitting element 30G, which is closer to the resin side surface 82 of the sealing resin 80 than the element main surface 30Gs. . The protruding region Rg3 is a region protruding in the y direction from the first side 30a of the element main surface 30Gs of the second semiconductor light emitting element 30G, which is closer to the resin side surface 83 of the sealing resin 80 than the element main surface 30Gs. . The protruding region Rg4 is a region protruding in the y direction from the first side 30a of the element main surface 30Gs of the second semiconductor light emitting element 30G, which is closer to the resin side surface 84 of the sealing resin 80 than the element main surface 30Gs. .

According to such protruding regions Rg1 to Rg4, the protruding regions overlap each other at the four corners of the light shielding portion 51G when viewed from above. That is, in the corner portion of the light shielding portion 51G near the resin side surface 81 and the resin side surface 83 of the sealing resin 80, the protrusion region Rg1 and the protrusion region Rg3 overlap. In the corner portion of the light shielding portion 51G near the resin side surface 81 and the resin side surface 84 of the sealing resin 80, the protrusion region Rg1 and the protrusion region Rg4 overlap. In the corner portion of the light shielding portion 51G near the resin side surface 82 and the resin side surface 83 of the sealing resin 80, the protrusion region Rg2 and the protrusion region Rg3 overlap. In the corner portion of the light shielding portion 51G near the resin side surface 82 and the resin side surface 84 of the sealing resin 80, the protrusion region Rg2 and the protrusion region Rg4 overlap.

As shown in FIG. 33, in this embodiment, the center position CXg of the light shielding part 51G is the same as the center position CAg of the second semiconductor light emitting element 30G. As a result, when viewed from above, the area of the protruding region Rg1, the area of the protruding region Rg2, the area of the protruding region Rg3, and the area of the protruding region Rg4 are each equal to each other. In other words, the areas of each of the protruding regions Rg1 to Rg4 are the same.

Here, the center position CAg of the second semiconductor light emitting element 30G is the center position of the main surface 30Gs of the second semiconductor light emitting element 30G in the x direction and the y direction when viewed from above. Further, if the amount of deviation between the center position CXg of the light shielding part 51G and the center position CAg of the second semiconductor light emitting element 30G is within 5% of the length in the x direction or the length in the y direction of the light shielding part 51G, the light shielding It can be said that the center position CXg of the portion 51G is the same as the center position CAg of the second semiconductor light emitting element 30G. Furthermore, if the difference between the area of the protruding region Rg1, the area of the protruding region Rg2, the area of the protruding region Rg3, and the area of the protruding region Rg4 is within 10% of the protruding region Rg1, then the area of the protruding region Rg1 is , it can be said that the area of the protruding region Rg2, the area of the protruding region Rg3, and the area of the protruding region Rg4 are each equal to each other.

As shown in FIG. 35, the light blocking portion 51G has a convex portion 51Ga that projects toward the second semiconductor light emitting element 30G. The convex portion 51Ga has a curved surface that protrudes toward the second semiconductor light emitting element 30G. In this embodiment, the convex portion 51Ga has a spherical surface that protrudes toward the second semiconductor light emitting element 30G. As shown in FIG. 34, the spherical surface of the convex portion 51Ga is formed to be closest to the second semiconductor light emitting element 30G at the center position CXg of the light shielding portion 51G.

In the present embodiment, the surface of the light shielding portion 51G opposite to the convex portion 51Ga in the z direction, that is, the upper surface 51Gb of the light shielding portion 51G facing the same side as the main resin surface 80s is separated from the flat surface perpendicular to the z direction. Become.

As shown in FIG. 31, the pair of support parts 52G are arranged closer to the resin side surface 84 of the sealing resin 80 than the first light shielding unit 50R in the y direction. The pair of support portions 52G extend along the x direction from both ends of the light shielding portion 51G in the x direction. The pair of support parts 52G are formed into a flat plate shape. As shown in FIG. 35, the plate thickness of the pair of support parts 52G is thinner than the thickness of the light shielding part 51G (the length in the z direction from the upper surface 51Gb of the light shielding part 51G to the tip surface of the convex part 51Ga). As shown in FIG. 31, each support portion 52G has a band shape extending in the x direction when viewed from above. The pair of support portions 52G includes a support portion 52GA extending toward the resin side surface 81 of the sealing resin 80 and a support portion 52GB extending toward the resin side surface 82 of the sealing resin 80. The distal end surface of the support portion 52GA is exposed from the resin side surface 81 of the sealing resin 80, and the distal end surface of the support portion 52GB is exposed from the resin side surface 82 of the sealing resin 80. In this embodiment, the length of the support portion 52GB in the x direction is shorter than the length of the support portion 52GA in the x direction.

As shown in FIG. 35, the upper surface 52Ga of the pair of support parts 52G facing away from the holding member 70 in the z direction is flush with the upper surface 51Gb of the light shielding part 51G. Note that the position of the pair of support parts 52G in the z direction with respect to the light shielding part 51G can be changed arbitrarily. In one example, in the z direction, the upper surface 52Ga of the pair of support parts 52G may be located below or above the upper surface 51Gb of the light shielding part 51G.

As shown in FIG. 36, the third light shielding unit 50B is arranged above the third semiconductor light emitting element 30B. In this embodiment, the third light shielding unit 50B is arranged closer to the resin main surface 80s in the z direction than the part of the wires W4 and W5 (see FIG. 31) that is closest to the resin main surface 80s in the z direction. There is. That is, the third light shielding unit 50B is arranged above and apart from the wires W4 and W5. In this embodiment, the third light shielding unit 50B is embedded in the sealing resin 80. That is, the third light shielding unit 50B is arranged inside the sealing resin 80.

The third light blocking unit 50B includes a light blocking portion 51B and a pair of support portions 52B. In this embodiment, the third light shielding unit 50B is a single component in which a light shielding part 51B and a pair of support parts 52B are integrally formed.

As shown in FIG. 36, the light shielding part 51B is disposed apart from the third semiconductor light emitting element 30B upward in the z direction away from the element main surface 30Bs. The light shielding part 51B is arranged above the wires W4 and W5. More specifically, the light shielding portion 51B is arranged closer to the resin main surface 80s than the portion of the wires W4 (see FIG. 31) and W5 that is closest to the resin main surface 80s in the z direction. The light shielding portion 51B is arranged to be spaced apart in the z direction from the portion of the wires W4 and W5 that is closest to the main resin surface 80s in the z direction. The light shielding part 51B is embedded in the sealing resin 80.

As shown in FIG. 33, the light shielding portion 51B is arranged to cover the entire main surface 30Bs of the third semiconductor light emitting device 30B when viewed from above. As shown in FIG. 31, the light shielding part 51B is arranged closer to the resin side surface 81 of the sealing resin 80 than the light shielding part 51R of the first light shielding unit 50R in the x direction. The light shielding part 51B is arranged closer to the resin side surface 83 of the sealing resin 80 than the light shielding part 51R in the y direction. More specifically, when viewed from the x direction, the end of the light shielding portion 51B that is closer to the resin side surface 84 of the sealing resin 80 is the same as the end of the light shielding portion 51B in the y direction. It is arranged so as to overlap the end portion of the sealing resin 80 that is closer to the resin side surface 83 .

In this embodiment, when viewed from above, the area of the light shielding portion 51B is larger than the area of the main surface 30Bs of the third semiconductor light emitting device 30B. The shape of the light shielding portion 51B when viewed from above is a rectangular shape, and is similar to the shape of the element main surface 30Bs of the third semiconductor light emitting element 30B when viewed from above. That is, in this embodiment, the shape of the light shielding part 51B when viewed from above is a square. In this embodiment, the area of the light shielding part 51B viewed from above is smaller than the area of the light shielding part 51R of the first light shielding unit 50R viewed from above. Further, the area of the light shielding portion 51B viewed from above is equal to the area of the light shielding portion 51G of the second light shielding unit 50G viewed from above. Here, if the difference between the area of the light shielding part 51B seen from above and the area of the light shielding part 51G seen from above is within 5% of the area of the light shielding part 51G seen from above, then the light shielding part seen from above It can be said that the area of 51B is equal to the area of the light shielding part 51G of the second light shielding unit 50G when viewed from above. Note that the size of the area of the light shielding portion 51B viewed from above can be arbitrarily changed. In one example, the area of the light shielding part 51B viewed from above may be equal to the area of the light shielding part 51R viewed from above. The area of the light shielding portion 51B viewed from above may be larger or smaller than the area of the light shielding portion 51G viewed from above.

As shown in FIG. 33, the light shielding portion 51B has a protruding region Rb1 that protrudes toward the resin side surface 81 of the sealing resin 80 (see FIG. 31) in the x direction with respect to the element main surface 30Bs of the third semiconductor light emitting element 30B. , a protruding region Rb2 that protrudes toward the resin side surface 82 (see FIG. 31) of the sealing resin 80 in the x direction with respect to the element main surface 30Bs, and a protruding region Rb2 of the sealing resin 80 in the y direction with respect to the element main surface 30Bs. A protruding region Rb3 protruding toward the resin side surface 83 (see FIG. 31) of the element main surface 30Bs, and a protruding region Rb4 protruding toward the resin side surface 84 of the sealing resin 80 (see FIG. 31) in the y direction with respect to the element main surface 30Bs. ,have.

The protruding region Rb1 is a portion of the region protruding in the x direction from the second side 30b of the element main surface 30Bs of the third semiconductor light emitting element 30B that is closer to the resin side surface 81 of the sealing resin 80 than the element main surface 30Bs. . The protruding region Rb2 is a portion of the region protruding in the x direction from the second side 30b of the element main surface 30Bs of the third semiconductor light emitting element 30B, which is closer to the resin side surface 82 of the sealing resin 80 than the element main surface 30Bs. . The protruding region Rb3 is a portion of the region protruding in the y direction from the first side 30a of the element main surface 30Bs of the third semiconductor light emitting element 30B that is closer to the resin side surface 83 of the sealing resin 80 than the element main surface 30Bs. . The protruding region Rb4 is a portion of the region protruding in the y direction from the first side 30a of the element main surface 30Bs of the third semiconductor light emitting element 30B that is closer to the resin side surface 84 of the sealing resin 80 than the element main surface 30Bs. .

According to such protruding regions Rb1 to Rb4, the protruding regions overlap each other at the four corners of the light shielding portion 51B when viewed from above. That is, in the corner portion of the light shielding portion 51B near the resin side surface 81 and the resin side surface 83 of the sealing resin 80, the protruding region Rb1 and the protruding region Rb3 overlap. In the corner portion of the light shielding portion 51B near the resin side surface 81 and the resin side surface 84 of the sealing resin 80, the protrusion region Rb1 and the protrusion region Rb4 overlap. In the corner portion of the light shielding portion 51B near the resin side surface 82 and the resin side surface 83 of the sealing resin 80, the protrusion region Rb2 and the protrusion region Rb3 overlap. In the corner portion of the light shielding portion 51B near the resin side surface 82 and the resin side surface 84 of the sealing resin 80, the protrusion region Rb2 and the protrusion region Rb4 overlap.

As shown in FIG. 33, in this embodiment, the center position CXb of the light shielding part 51B is the same as the center position CAb of the third semiconductor light emitting element 30B. As a result, when viewed from above, the area of the protruding region Rb1, the area of the protruding region Rb2, the area of the protruding region Rb3, and the area of the protruding region Rb4 are each equal to each other. In other words, the areas of each of the protruding regions Rb1 to Rb4 are the same.

Here, the center position CAb of the third semiconductor light emitting element 30B is the center position of the main surface 30Bs of the third semiconductor light emitting element 30B in the x direction and the y direction when viewed from above. Further, if the amount of deviation between the center position CXb of the light shielding part 51B and the center position CAb of the third semiconductor light emitting element 30B is within 5% of the length in the x direction or the length in the y direction of the light shielding part 51B, the light can be blocked. It can be said that the center position CXb of the portion 51B is the same as the center position CAb of the third semiconductor light emitting element 30B. Furthermore, if the difference between the area of the protruding region Rb1, the area of the protruding region Rb2, the area of the protruding region Rb3, and the area of the protruding region Rb4 is within 10% of the protruding region Rb1, then the area of the protruding region Rb1 is , it can be said that the area of the protruding region Rb2, the area of the protruding region Rb3, and the area of the protruding region Rb4 are each equal to each other.

As shown in FIG. 36, the light shielding portion 51B has a convex portion 51Ba that protrudes toward the third semiconductor light emitting element 30B. The protrusion 51Ba has a curved surface that protrudes toward the third semiconductor light emitting element 30B. In this embodiment, the convex portion 51Ba has a spherical surface that protrudes toward the third semiconductor light emitting element 30B. As shown in FIG. 36, the spherical surface of the convex portion 51Ba is formed to be closest to the third semiconductor light emitting element 30B at the center position CXb of the light shielding portion 51B.

In this embodiment, the surface of the light shielding part 51B opposite to the convex part 51Ba in the z direction, that is, the upper surface 51Bb of the light shielding part 51B facing the same side as the main resin surface 80s, is separated from the flat surface perpendicular to the z direction. Become.

As shown in FIG. 31, the pair of support parts 52B are arranged closer to the resin side surface 83 of the sealing resin 80 than the first light shielding unit 50R in the y direction. The pair of support parts 52B extend along the x direction from both ends of the light shielding part 51B in the x direction. The pair of support parts 52B are formed into a flat plate shape. As shown in FIG. 36, the plate thickness of the pair of support parts 52B is thinner than the thickness of the light shielding part 51B (the length in the z direction from the upper surface 51Bb of the light shielding part 51B to the tip surface of the convex part 51Ba). As shown in FIG. 31, each support portion 52B has a band shape extending in the x direction when viewed from above. The pair of support portions 52B includes a support portion 52BA extending toward the resin side surface 81 of the sealing resin 80 and a support portion 52BB extending toward the resin side surface 82 of the sealing resin 80. The distal end surface of the support portion 52BA is exposed from the resin side surface 81 of the sealing resin 80, and the distal end surface of the support portion 52BB is exposed from the resin side surface 82 of the sealing resin 80. In this embodiment, the length of the support portion 52BB in the x direction is shorter than the length of the support portion 52BA in the x direction.

As shown in FIG. 36, the upper surface 52Ba of the pair of support parts 52B facing away from the holding member 70 in the z direction is flush with the upper surface 51Bb of the light shielding part 51B. Note that the position of the pair of support parts 52B in the z direction with respect to the light shielding part 51B can be changed arbitrarily. In one example, in the z direction, the upper surfaces 52Ba of the pair of support parts 52B may be located below or above the upper surface 51Bb of the light shielding part 51B.

(Method for manufacturing semiconductor light emitting device)
A method for manufacturing the semiconductor light emitting device 1C of this embodiment will be described with reference to FIGS. 37 to 45.

As shown in FIGS. 37 to 39, the method for manufacturing the semiconductor light emitting device 1C includes a step of forming leads 960. In this step, for example, by pressing the metal plate 900, an anode lead 960A and a cathode lead 960K are formed as the leads 960.

More specifically, as shown in FIG. 37, a metal plate 900 is set in a lower die (not shown) of a press machine. The metal plate 900 is a material for the anode lead 960A and the cathode lead 960K, and is made of Cu, Ni, or an alloy thereof. The metal plate 900 has an opening 901 penetrating the metal plate 900 in the thickness direction (z direction), three anode protrusions 902 forming an anode lead 960A, and one cathode lead 960K. A cathode protrusion 903 is formed. Three anode protrusions 902 and one cathode protrusion 903 each extend in the x direction within the opening 901. The three anode protrusions 902 are portions for forming the respective support portions 62AR, 62AG, and 62AB (see FIG. 31) of the anode leads 60AR, 60AG, and 60AB as the anode lead 960A. The cathode protrusion 903 is a portion for forming the support portions 62KR, 62KG, and 62KB of the cathode leads 60KR, 60KG, and 60KB (see FIG. 31 for both) as the cathode lead 960K.

Next, as shown in FIG. 38, the three anode protrusions 902 and one cathode protrusion 903 are pressurized using a press machine. Thereby, each anode protrusion 902 and cathode protrusion 903 are extended in the x direction and the y direction. As a result, the plate thickness of each anode protrusion 902 and cathode protrusion 903 becomes thinner. In addition, from FIG. 38 onward, dots are attached to regions where the plate thickness is thinner among each of the anode protrusion 902 and cathode protrusion 903.

Next, the three anode protrusions 902 and one cathode protrusion 903 are punched out using a press machine, and a portion of the metal plate 900 that is outside the three anode protrusions 902 and one cathode protrusion 903 is punched out. . Thereby, as shown in FIG. 39, an anode lead 60A and a cathode lead 60K are respectively formed. The tips of the anode terminal parts 61AR, 61AG, 61AB of the anode leads 60AR, 60AG, 60AB and the cathode terminal parts 61KR, 61KG, 61KB of the cathode leads 60KR, 60KG, 60KB are as follows. Each is connected to a metal plate 900.

As shown in FIG. 40, the method for manufacturing the semiconductor light emitting device 1C includes a step of forming a holding member 70. The holding member 70 is made of an electrically insulating material and is formed by molding the anode lead 60A and the cathode lead 60K. In this embodiment, the holding member 70 is made of black epoxy resin. The holding member 70 is formed to fill the through hole between the anode leads 60AR, 60AG, 60AB and the cathode leads 60KR, 60KG, 60KB in the opening 901. Further, the holding member 70 covers one side in the z direction of each anode support part 62AR, 62AG, 62AB of each anode lead 60AR, 60AG, 60AB, and covers each cathode support part 62KR of each cathode lead 60KR, 60KG, 60KB. , 62KG, and 62KB, one side in the z direction is covered. As a result, when viewed from one side in the z direction, the anode terminal portions 61AR, 61AG, 61AB of the anode leads 60AR, 60AG, 60AB are exposed from the holding member 70, while the anode support portions 62AR, 62AG, 62AB are exposed. It is not exposed from the holding member 70. Also, when viewed from one side in the z direction, the cathode terminal portions 61KR, 61KG, and 61KB of the cathode leads 60KR, 60KG, and 60KB are exposed from the holding member 70, while the cathode support portions 62KR, 62KG, and 62KB are exposed from the holding member. It has not been exposed since 70.

As shown in FIG. 41, the method for manufacturing the semiconductor light emitting device 1C includes a step of mounting semiconductor light emitting elements 30R, 30G, 30B and Zener diodes 33G, 33B.
In this step, the first semiconductor light emitting element 30R is mounted on the first anode lead 60AR, the second semiconductor light emitting element 30G is mounted on the second cathode lead 60KG, and the third semiconductor light emitting element is mounted on the third cathode lead 60KB. Implement 30B. Further, a Zener diode 33G is mounted on the second anode lead 60AG, and a Zener diode 33B is mounted on the third anode lead 60AB.

More specifically, conductive bonding material BJ is applied to each anode support part 62AR, 62AG, 62AB of each anode lead 60AR, 60AG, 60AB, and each cathode support part 62KG, 62KB of each cathode lead 60KG, 60KB. applied. Then, the first semiconductor light emitting element 30R is placed on the conductive bonding material BJ of the first anode support section 62AR, the Zener diode 33G is placed on the conductive bonding material BJ of the second anode support section 62AG, and the third anode support The Zener diode 33B is placed on the conductive bonding material BJ of the portion 62AB, the second semiconductor light emitting element 30G is placed on the conductive bonding material BJ of the second cathode support portion 62KG, and the conductive bonding material BJ of the third cathode support portion 62KB is placed on the Zener diode 33B. The third semiconductor light emitting element 30B is placed on the bonding material BJ. Then, after each conductive bonding material BJ is brought into a liquid phase state by a reflow process, each conductive bonding material BJ is solidified by cooling. Thereby, each conductive bonding material BJ and each semiconductor light emitting element 30R, 30G, 30B and Zener diode 33G, 33B are bonded.

As shown in FIG. 42, the method for manufacturing the semiconductor light emitting device 1C includes a step of forming wires W1 to W7. Wires W1 to W7 are formed by wire bonding using a wire bonding device. Each of the wires W1 to W7 is made of, for example, Au, Cu or Al.

As shown in FIG. 43, the method for manufacturing the semiconductor light emitting device 1C includes a step of arranging a light shielding unit holder 950. The light shielding unit holder 950 is arranged on the metal plate 900. The light shielding unit holder 950 includes a first light shielding unit 950R, a second light shielding unit 950G, a third light shielding unit 950B, and a pair of unit holding parts 953. When viewed from above, the first light shielding unit 950R, the second light shielding unit 950G, and the third light shielding unit 950B are arranged so as to be aligned with each other in the x direction and spaced apart from each other in the y direction. The pair of unit holding parts 953 are arranged to sandwich the first light shielding unit 950R, the second light shielding unit 950G, and the third light shielding unit 950B from the x direction. It holds each of three light shielding units 950B.

In the light shielding unit holder 950, the light shielding part 951R of the first light shielding unit 950R covers the entire main surface 30Rs of the first semiconductor light emitting element 30R, and the light shielding part 951G of the second light shielding unit 950G covers the entire main surface 30Rs of the first semiconductor light emitting element 30R. The light blocking portion 951B of the third light blocking unit 950B is arranged to cover the entire device main surface 30Gs of the third semiconductor light emitting device 30B.

The first light shielding unit 950R has a pair of support parts 952R. The pair of support parts 952R connects the light shielding part 951R and the pair of unit holding parts 953. Thereby, the light shielding part 951R is held by the pair of unit holding parts 953.

The second light shielding unit 950G has a pair of support parts 952G. The pair of support parts 952G connects the light shielding part 951G and the pair of unit holding parts 953. Thereby, the light shielding part 951G is held by the pair of unit holding parts 953.

The third light shielding unit 950B has a pair of support parts 952B. The pair of support parts 952B connects the light shielding part 951B and the pair of unit holding parts 953. Thereby, the light shielding part 951B is held by the pair of unit holding parts 953.

As shown in FIG. 44, the method for manufacturing the semiconductor light emitting device 1C includes a step of forming a resin layer 980. The resin layer 980 is a member that becomes the sealing resin 80 shown in FIG. The resin layer 980 is made of, for example, epoxy resin. In this step, the resin layer 980 is formed by, for example, transfer molding. The resin layer 980 is provided, for example, between a pair of unit holding parts 953 of the light shielding unit holding body 950.

As shown in FIG. 45, the method for manufacturing the semiconductor light emitting device 1C includes a step of cutting the leads 960, the holding member 70, and the resin layer 980. For example, the resin layer 980 and the holding member 70 are cut with a dicing blade along the cutting line CL1 shown by the dashed line in FIG. Further, the light shielding unit holder 950 is cut with a dicing blade along the cutting line CL2 shown by the dashed line in FIG. As a result, each of the light shielding units 950R, 950G, and 950B of the light shielding unit holder 950 and the pair of unit holding parts 953 are separated. Then, the anode lead 60A and the cathode lead 60K are cut by a dicing blade along the cutting line CL3 shown by the dashed line in FIG. 45. Through the above steps, the semiconductor light emitting device 1C is manufactured.

(effect)
According to the semiconductor light emitting device 1C of the present embodiment, in addition to the effects similar to (1-1) to (1-9) of the semiconductor light emitting device 1A of the first embodiment, the following effects can be obtained.

(3-1) The plurality of light shielding parts 51R, 51G, and 51B are individually arranged on the device main surfaces 30Rs, 30Gs, and 30Bs of the semiconductor light emitting devices 30R, 30G, and 30B. According to this configuration, the light shielding portions 51R, 51G, 51B can be formed in shapes suitable for the main surfaces 30Rs, 30Gs, 30Bs of the semiconductor light emitting devices 30R, 30G, 30B. Moreover, the light shielding parts 51R, 51G, and 51B can be arranged at suitable positions with respect to the main surfaces 30Rs, 30Gs, and 30Bs of the semiconductor light emitting devices 30R, 30G, and 30B.

[Example of change]
Each of the embodiments described above is an example of a form that a semiconductor light emitting device according to the present disclosure can take, and is not intended to limit the form. A semiconductor light emitting device according to the present disclosure may take a form different from the forms exemplified in each of the above embodiments. An example thereof is a form in which a part of the structure of each of the above embodiments is replaced, changed, or omitted, or a form in which a new structure is added to each of the above embodiments. Furthermore, the following modifications can be combined with each other unless technically inconsistent. In each of the following modified examples, parts common to each of the above embodiments are given the same reference numerals as in each of the above embodiments, and the explanation thereof will be omitted.

- In the first embodiment, the shape of the light shielding part 51 of the light shielding unit 50 can be changed arbitrarily. In one example, the shape of the light shielding part 51 can be changed as shown in (A1) to (A5) below.
(A1) The light shielding portion 51 may be formed into a flat plate shape. As shown in FIG. 46, the shape of the convex portion 51a viewed from the y direction is a rectangular shape in which the x direction is the long side direction and the z direction is the short side direction. The thickness of the convex portion 51a (the size of the convex portion 51a in the z direction) is thicker than the thickness of the support portion 52 (the size of the support portion 52 in the z direction).

(A2) The light shielding portion 51 may be formed in a truncated quadrangular pyramid shape that becomes smaller toward the semiconductor light emitting device 30 in the z direction. As shown in FIG. 47, the shape of the convex portion 51a of the light shielding portion 51 when viewed from the y direction is a trapezoid. When viewed from the y direction, the convex portion 51a has a tapered surface 51c that is a side surface that slopes toward each other toward the semiconductor light emitting element 30 in the z direction. In this modified example, although not shown, when viewed from the x direction, the convex portion 51a has a tapered surface that is a side surface that slopes toward each other toward the semiconductor light emitting element 30 in the z direction. There is.

Further, in one example, when viewed from the y direction, the convex portion 51a of the light shielding portion 51 has a tapered surface 51c, which is a side surface that slopes closer to each other as the convex portion 51a goes toward the center of the convex portion 51a in the x direction. The protrusion 51a may be provided so that the protrusion 51a has a rectangular flat shape when viewed from the direction.

In one example, when viewed from the x direction, the convex portion 51a of the light shielding portion 51 has a tapered surface 51c that is a side surface that slopes toward the center of the convex portion 51a in the y direction. The protrusion 51a may be provided so that the protrusion 51a has a rectangular flat shape when viewed from the direction.

(A3) The convex portion 51a of the light shielding portion 51 may be formed of a curved surface other than a spherical surface. In one example, as shown in FIG. 48, when viewed from the y direction, the convex portion 51a has a first curved surface 51d having a first radius of curvature, and a second curved surface having a second radius of curvature larger than the first radius. It consists of a curved surface having a surface 51e. The first curved surface 51d is a curved surface extending from the upper surface 51b of the convex portion 51a toward the substrate 10 in the z direction. The second curved surface 51e is a curved surface connected to the first curved surface 51d. The second curved surface 51e forms at least the tip of the convex portion 51a.

In one example, when viewed from the y direction, the convex portion 51a of the light shielding portion 51 has a curved surface that curves toward the semiconductor light emitting element 30 as it goes toward the center of the convex portion 51a in the x direction; The convex portion 51a may be provided so that the portion 51a has a rectangular flat plate shape.

In one example, when viewed from the x direction, the convex portion 51a of the light shielding portion 51 has a curved surface that curves toward the semiconductor light emitting element 30 as it approaches the center of the convex portion 51a in the y direction; The convex portion 51a may be provided so that the portion 51a has a rectangular flat plate shape.

(A4) The shape of the light shielding part 51 when viewed from above is not limited to a rectangular shape, and may be circular, for example, as shown in FIG. 49. In this case, the shape of the convex portion 51a is arbitrary, but preferably spherical. Note that the shape of the light shielding part 51 when viewed from above may be an oval, an ellipse, or an n (n≧5) polygon instead of a circle or a rectangle.

(A5) In the first embodiment, the entire convex portion 51a of the light shielding portion 51 is formed of a spherical surface, but the present invention is not limited to this. For example, only the tip of the protrusion 51a may be formed into a spherical surface, or a portion including the tip of the protrusion 51a may be formed into a spherical surface.

Further, for example, in the modified example (A1) shown in FIG. 46 and the modified example (A2) shown in FIG. 47, the lower surface 51x of the convex portion 51a is a plane perpendicular to the z direction, but is not limited to this. The lower surface 51x of the convex portion 51a may be a curved surface or a spherical surface. Further, the lower surface 51x of the convex portion 51a may be an inclined surface that slopes toward one of the resin side surfaces 41 to 44 as it goes downward.

In the modified examples (A1) to (A5) above, the convex portion 51a covers the entire main surface 30s of the semiconductor light emitting device 30 when viewed from above. Note that, when viewed from above, the convex portion 51a may be configured to cover a part of the element main surface 30s of the semiconductor light emitting element 30. In short, when viewed from above, the convex portion 51a only needs to cover at least a portion of the main surface 30s of the semiconductor light emitting device 30.

Note that at least one of the light shielding parts 51R, 51G, and 51B of each of the light shielding units 50R, 50G, and 50B in the third embodiment is also modified like the light shielding parts 51 in (A1) to (A5) above. Good too.

- In the first and second embodiments, the respective sizes of the light shielding portion 51 of the light shielding unit 50 in the x direction and the y direction can be changed arbitrarily.
In an example of a modification of the first embodiment, as shown in FIG. 50, the light shielding part 51 is formed over the entire portion of the sealing resin 40 that is at the same position as the light shielding part 51 in the z direction. In other words, the light shielding portion 51 is in contact with each of the resin side surfaces 41 to 44. Although not shown, the shape of the light shielding part 51 when viewed from above is rectangular. In this case, the pair of support parts 52 is omitted from the light shielding unit 50.

Further, in an example of a modification of the second embodiment, as shown in FIG. 51, the light shielding portion 51 is formed over the entire first resin main surface 40As of the first resin layer 40A. In other words, the light shielding portion 51 is exposed to each of the resin side surfaces 41 to 44. In this case, the first resin layer 40A and the second resin layer 40B are separated by a light shielding part 51.

- In the second embodiment, the shape of the light shielding part 51 of the light shielding unit 50 viewed from the y direction can be arbitrarily changed. In one example, the shape of the light shielding part 51 viewed from the y direction can be changed as shown in (B1) to (B3) below.

(B1) As shown in FIG. 52, the light shielding portion 51 has a convex portion 51a having a spherical surface, like the convex portion 51a of the first embodiment. In this case, the first resin layer 40A is provided with a spherical recess 45A that is recessed toward the semiconductor light emitting element 30 from the center of the first resin main surface 40As in the x and y directions. The light shielding part 51 is formed so as to be embedded in the recess 45A. In other words, the upper surface 51b of the light shielding portion 51 facing the same side as the resin main surface 40s in the z direction is flush with the first resin main surface 40As. The second resin layer 40B is formed so as to be in contact with the upper surface 51b of the light shielding part 51 and the first resin main surface 40As. Further, the spherical surface of the convex portion 51a and the curved inner surface which is the inner surface of the recessed portion 45A are in contact with each other. In other words, the curved inner surface of the recess 45A is a spherical surface.

(B2) As shown in FIG. 53, the light shielding part 51 has a convex part 51a in the shape of a truncated quadrangular pyramid that becomes smaller toward the semiconductor light emitting element 30. In this case, the first resin layer 40A is provided with a truncated quadrangular pyramid-shaped recess 45B that is recessed toward the semiconductor light emitting element 30 from the center of the first resin main surface 40As in the x and y directions. The light shielding part 51 is formed so as to be embedded in the recessed part 45B. In other words, the upper surface 51b of the light shielding portion 51 facing the same side as the resin main surface 40s in the z direction is flush with the first resin main surface 40As. The second resin layer 40B is formed so as to be in contact with the upper surface 51b of the light shielding part 51 and the first resin main surface 40As. Further, the surface of the convex portion 51a and the tapered inner surface, which is the inner surface of the recessed portion 45B, are in contact with each other. That is, the tapered inner surface of the recess 45B has a truncated quadrangular pyramid shape.

(B3) As shown in FIG. 54, the light shielding part 51 has a flat convex part 51a. In this case, the first resin layer 40A is provided with a rectangular parallelepiped-shaped recess 45C that is recessed toward the semiconductor light emitting element 30 from the center of the first resin main surface 40As in the x and y directions. The light shielding part 51 is formed so as to be embedded in the recess 45C. In other words, the upper surface 51b of the light shielding portion 51 facing the same side as the resin main surface 40s in the z direction is flush with the first resin main surface 40As. The second resin layer 40B is formed so as to be in contact with the upper surface 51b of the light shielding part 51 and the first resin main surface 40As. Further, the surface of the convex portion 51a and the inner surface of the concave portion 45C are in contact with each other. In other words, the inner surface of the recess 45C has a flat plate shape.

- In the above modification examples (B1) to (B3), the position of the upper surface 51b of the light shielding part 51 in the z direction can be changed arbitrarily. The upper surface 51b of the light shielding part 51 may be formed closer to the semiconductor light emitting element 30 than the first resin main surface 40As. In this case, a portion of the second resin layer 40B enters the recesses 45A, 45B, and 45C of the first resin layer 40A. In short, the light blocking portion 51 only needs to enter at least a portion of each of the recesses 45A, 45B, and 45C.

Further, the upper surface 51b of the light shielding portion 51 may be formed closer to the resin main surface 40s than the first resin main surface 40As. In other words, a portion of the light shielding portion 51 may protrude from the recesses 45A, 45B, and 45C in the z direction. In this case, when viewed from the z direction, a portion of the light shielding portion 51 may protrude from the recesses 45A, 45B, and 45C in at least one of the x direction and the y direction. Portions of the light shielding portion 51 that protrude from the recesses 45A, 45B, and 45C are arranged on the first resin main surface 40As.

- In the above modification examples (B1) to (B3), the shapes of the recesses 45A, 45B, and 45C can be changed arbitrarily. For example, the shape of the recess 45B may be changed so that the light shielding portion 51 has the shape of the light shielding portion 51 in (A2) above. Further, the shape of the concave portion 45C may be changed so that the light shielding portion 51 has the shape of the light shielding portion 51 described above (A3).

Further, the bottom of the recess 45A may be formed from a spherical surface, and a portion closer to the first resin main surface 40As than the bottom may be formed from a tapered surface. In short, the recess 45A only needs to have at least a spherical bottom. In this case, the light shielding portion 51 may be provided only in the portion corresponding to the spherical surface.

In the modified examples (B1) to (B3) above, the convex portion 51a covers the entire main surface 30s of the semiconductor light emitting device 30 when viewed from above. Note that, when viewed from above, the convex portion 51a may be configured to cover a part of the element main surface 30s of the semiconductor light emitting element 30. In short, when viewed from above, the convex portion 51a only needs to cover at least a portion of the main surface 30s of the semiconductor light emitting device 30.

- In the second embodiment, the material of the light shielding part 51 of the light shielding unit 50 may be a reflective member that reflects light from the semiconductor light emitting element 30, such as a metal material. In one example, as shown in FIG. 55, the reflective member 90 is formed in a curved shape. In the illustrated example, the outer surface of the reflective member 90 is formed into a spherical shape. In this case, the first resin layer 40A is provided with a spherical recess 45A that is recessed toward the semiconductor light emitting element 30 from the center of the first resin main surface 40As in the x and y directions. The reflecting member 90 is attached to the inner surface of the recess 45A. A portion of the second resin layer 40B enters the recess 45A.

According to this configuration, when light from the main surface 30s of the semiconductor light emitting device 30 hits the reflective member 90, all of the light that hits the reflective member 90 is reflected by the reflective member 90, and the resin side surface 41 of the sealing resin 40 It emits from ~44. Therefore, light from the main surface 30s of the semiconductor light emitting device 30 is easily emitted to the resin side surfaces 41 to 44.

- In the first and third embodiments, a reflective member that reflects light from the semiconductor light emitting element 30 may be attached to the surface of the convex portion 51a of the light shielding portion 51 of the light shielding unit 50.
- In each embodiment, a reflecting member that reflects light from the semiconductor light emitting device 30 may be attached to at least the surface of the light blocking portion 51 of the light blocking unit 50 that faces the semiconductor light emitting device 30 in the z direction.

- In the first embodiment, the light shielding section 51 was provided for the semiconductor light emitting element 30 so that the light from the semiconductor light emitting element 30 is emitted substantially equally to both sides in the x direction and both sides in the y direction. Not limited to. For example, the light shielding part 51 may be provided so that the light from the semiconductor light emitting element 30 is biased in a specific direction. Examples of this configuration include the following (C1) to (C4). Note that the second and third embodiments may be similarly modified.

(C1) As shown in FIG. 56, the center position CA of the semiconductor light emitting element 30 and the center position CX of the light shielding part 51 may be different from each other. In the illustrated example, the center position CX of the light shielding part 51 is shifted closer to the resin side surface 42 than the center position CA of the semiconductor light emitting element 30 in the x direction. Therefore, as shown in FIG. 57, the area of the protruding region R2 of the light shielding portion 51 with respect to the semiconductor light emitting element 30 in the x direction is larger than the area of the protruding region R1. In other words, the area of the protruding region R1 is smaller than the area of the protruding region R2. More specifically, the length of the protruding region R2 in the x direction is longer than the length of the protruding region R1 in the x direction. In other words, the length of the protruding region R1 in the x direction is shorter than the length of the protruding region R2 in the x direction. Further, the area of the protruding region R2 is larger than the protruding regions R3 and R4 of the light shielding portion 51 with respect to the semiconductor light emitting element 30 in the y direction. Further, the area of the protruding region R1 is smaller than the area of the protruding regions R3 and R4. More specifically, the length of the protruding region R2 in the x direction is longer than the length of the protruding regions R3 and R4 in the y direction. In other words, the length of the protruding region R1 in the x direction is shorter than the length of the protruding regions R3 and R4 in the y direction. In this way, the areas of the protruding region R1 and the protruding region R2 protruding from the main surface 30s of the semiconductor light emitting device 30 in the x direction may be different from each other. Alternatively, the areas of the protruding regions R1 and R2 may be different from the areas of the protruding regions R3 and R4 that protrude from the main surface 30s of the semiconductor light emitting device 30 in the y direction.

According to this configuration, when light from the element main surface 30s of the semiconductor light emitting element 30 hits the light shielding part 51, it is easier to emit from the resin side surface 42 than the resin side surfaces 41, 43, and 44. That is, the intensity of the light emitted from the resin side surface 42 is stronger than the intensity of the light emitted from the resin side surfaces 41, 43, and 44. On the other hand, when light from the main surface 30s of the semiconductor light emitting device 30 hits the light shielding portion 51, it is less likely to be emitted from the resin side surface 41 than from the resin side surfaces 42 to 44. In other words, the intensity of the light emitted from the resin side surface 41 is weaker than the intensity of the light emitted from the resin side surfaces 42 to 44. In this way, the intensity of the light emitted in the x direction can be changed.

Note that in the x direction, the center position CX of the light shielding part 51 may be shifted closer to the resin side surface 41 than the center position CA of the semiconductor light emitting element 30. According to this configuration, when light from the element main surface 30s of the semiconductor light emitting element 30 hits the light shielding part 51, it is easier to emit from the resin side surface 41 than from the resin side surfaces 42 to 44. In other words, the intensity of the light emitted from the resin side surface 41 is stronger than the intensity of the light emitted from the resin side surfaces 42 to 44. On the other hand, when light from the main surface 30s of the semiconductor light emitting device 30 hits the light shielding portion 51, it is less likely to be emitted from the resin side surface 42 than from the resin side surfaces 41, 43, and 44. That is, the intensity of the light emitted from the resin side surface 42 is weaker than the intensity of the light emitted from the resin side surfaces 41, 43, and 44. In this way, the intensity of the light emitted in the x direction can be changed.

Further, in the y direction, the center position CX of the light shielding part 51 and the center position CA of the semiconductor light emitting element 30 may be shifted from each other. According to this configuration, the intensity of light emitted in the y direction can be changed in the same way as when the center position CX of the light shielding part 51 and the center position CA of the semiconductor light emitting element 30 are shifted from each other in the x direction. can.

Further, the center position CX of the light shielding portion 51 may be shifted from the center position CA of the semiconductor light emitting element 30 in both the x direction and the y direction. According to this configuration, the intensity of light emitted in the x direction and the y direction can be changed.

(C2) The shape of the convex portion 51a of the light shielding portion 51 may be asymmetrical in the x direction. That is, the convex portion 51a has a first slope portion and a second slope portion that slope toward each other toward the semiconductor light emitting element 30. When viewed from above, the length of one of the portion of the first slope that overlaps with the semiconductor light emitting device 30 and the portion of the second slope that overlaps with the semiconductor light emitting device 30 is longer than the length of the portion of the first slope that overlaps with the semiconductor light emitting device 30. The length is longer than the other of the portion overlapping with the semiconductor light emitting element 30 and the portion of the second slope portion overlapping with the semiconductor light emitting element 30 . As an example of this, as shown in FIG. 58, the light shielding is performed such that the end of the convex portion 51a closest to the semiconductor light emitting element 30 in the z direction is located closer to the resin side surface 42 than the center position CX of the light shielding portion 51. A section 51 is provided. More specifically, the surface of the convex portion 51a has a first curved surface 51f having a first radius of curvature, and a second curved surface 51g having a second radius of curvature smaller than the first radius of curvature. . The first curved surface 51f is formed to extend from the end in the direction closer to the resin side surface 41 of both ends of the light shielding section 51 in the x direction to a point closer to the resin side surface 42 than the center position CX of the light shielding section 51. Here, the first curved surface 51f corresponds to, for example, a first slope, and the second curved surface 51g corresponds to, for example, a second slope.

As can be seen from FIG. 58, when viewed from above, the length of the portion of the first curved surface 51f that overlaps with the semiconductor light emitting device 30 is longer than the length of the portion of the second curved surface 51g that overlaps with the semiconductor light emitting device 30. .

According to this configuration, light from the main surface 30s of the semiconductor light emitting device 30 easily hits the first curved surface 51f. Therefore, light from the main surface 30s of the semiconductor light emitting device 30 is easily emitted from the resin side surface 41 due to the first curved surface 51f. On the other hand, light from the main surface 30s of the semiconductor light emitting device 30 is less likely to hit the second curved surface 51g. Therefore, the light from the main surface 30s of the semiconductor light emitting device 30 is difficult to exit from the resin side surface 42 due to the second curved surface 51g. In this way, the intensity of the light emitted from the resin side surface 41 becomes stronger than the intensity of the light emitted from the resin side surface 42. In this way, the intensity of the light emitted in the x direction can be changed.

Note that the light shielding part 51 may be provided such that the end of the convex part 51a closest to the semiconductor light emitting element 30 in the x direction is located closer to the resin side surface 41 than the center position CX of the light shielding part 51. More specifically, the surface of the convex portion 51a has a first curved surface 51f having a first radius of curvature, and a second curved surface 51g having a second radius of curvature larger than the first radius of curvature. . The second curved surface 51g is formed to extend from the end in the direction closer to the resin side surface 42 of both ends of the light shielding section 51 in the x direction to closer to the resin side surface 41 than the center position CX of the light shielding section 51.

According to this configuration, light from the main surface 30s of the semiconductor light emitting device 30 easily hits the second curved surface 51g. Therefore, light from the main surface 30s of the semiconductor light emitting device 30 is easily emitted from the resin side surface 42 due to the second curved surface 51g. On the other hand, light from the main surface 30s of the semiconductor light emitting device 30 is less likely to hit the first curved surface 51f. Therefore, light from the main surface 30s of the semiconductor light emitting device 30 is difficult to exit from the resin side surface 41 due to the first curved surface 51f. In this way, the intensity of the light emitted from the resin side surface 42 becomes stronger than the intensity of the light emitted from the resin side surface 41. Therefore, the intensity of light emitted in the x direction can be changed.

Furthermore, the shape of the convex portion 51a of the light shielding portion 51 may be asymmetrical in the y direction. According to this configuration, the intensity of the light emitted in the y direction can be changed in the same way as when the shape of the convex part 51a of the light shielding part 51 is asymmetrical in the x direction.

(C3) As shown in FIG. 59, the light shielding portion 51 may be formed such that the protruding regions R1 and R2 of the light shielding portion 51 with respect to the semiconductor light emitting element 30 have different sizes in the x direction. In the illustrated example, the size of the protruding region R1 in the x direction is larger than the size of the protruding region R2 in the x direction. According to this configuration, light from the main surface 30s of the semiconductor light emitting device 30 hits the protruding region R1 more easily than the protruding regions R2 to R4. Therefore, light from the main surface 30s of the semiconductor light emitting device 30 is easily emitted from the resin side surface 41 due to the protrusion region R1. In this way, the intensity of the light emitted from the resin side surface 41 becomes stronger than the intensity of the light emitted from the resin side surfaces 42 to 44. Therefore, the intensity of light emitted in the x direction can be changed.

Note that the size of the protruding region R1 in the x direction may be smaller than the size of the protruding region R2 in the x direction. In other words, the size of the protruding region R2 in the x direction is larger than the size of the protruding region R1 in the x direction. According to this configuration, light from the main surface 30s of the semiconductor light emitting device 30 hits the protruding region R2 more easily than the protruding regions R1, R3, and R4. Therefore, light from the main surface 30s of the semiconductor light emitting device 30 is easily emitted from the resin side surface 42 due to the protrusion region R2. In this way, the intensity of the light emitted from the resin side surface 42 becomes stronger than the intensity of the light emitted from the resin side surfaces 41, 43, and 44. Therefore, the intensity of light emitted in the x direction can be changed.

Further, the light shielding section 51 may be formed such that the protruding regions R3 and R4 of the light shielding section 51 with respect to the semiconductor light emitting element 30 have different sizes in the y direction. According to this configuration, the intensity of the light emitted in the y direction can be changed in the same way as when the sizes of the protruding regions R1 and R2 in the x direction are different.

Further, the light shielding portion 51 may be formed such that the protruding regions R1 to R4 of the light shielding portion 51 with respect to the semiconductor light emitting element 30 have different sizes in the x direction and the y direction. According to this configuration, the intensity of the light emitted in the x direction and the y direction can be changed.

(C4) The shape of the light shielding part 51 seen from above does not have to be similar to the shape of the semiconductor light emitting element 30 seen from above, and the protruding regions R1 and R2 of the light shielding part 51 with respect to the semiconductor light emitting element 30 in the x direction The area and the area of the protruding regions R3 and R4 of the light shielding part 51 with respect to the semiconductor light emitting element 30 in the y direction may be different from each other. In one example, the shape of the light shielding part 51 when viewed from above is a rectangular shape in which the x direction is the long side direction and the y direction is the short side direction. The center position CX of the light shielding part 51 and the center position CA of the semiconductor light emitting element 30 match. In this case, the area of the protruding region R1 and the area of the protruding region R2 are equal to each other, the area of the protruding region R3 is equal to the area of the protruding region R4, and the area of the protruding regions R1 and R2 is equal to the area of the protruding regions R3 and R4. becomes larger than In another example, the shape of the light shielding part 51 when viewed from above is a rectangle with the long side direction in the y direction and the short side direction in the x direction. The center position CX of the light shielding part 51 and the center position CA of the semiconductor light emitting element 30 match. In this case, the area of the protruding region R1 and the area of the protruding region R2 are equal to each other, the area of the protruding region R3 is equal to the area of the protruding region R4, and the area of the protruding regions R3 and R4 is the area of the protruding regions R1 and R2. becomes larger than

- In the first embodiment, the arrangement position of the light shielding unit 50 in the z direction can be changed arbitrarily. In one example, as shown in FIG. 60, the light shielding part 51 may be arranged on the main resin surface 40s. In the illustrated example, the light shielding portion 51 is formed over the entire resin main surface 40s. The light shielding part 51 is formed into a flat plate shape. In this case, the light shielding unit 50 does not have the pair of support parts 52.

In another example, the light shielding part 51 may be arranged so that a part thereof overlaps with the wire W when viewed from the x direction or the y direction. In this case, the light shielding part 51 is arranged so as not to interfere with the wire W.

In addition, regarding at least one of the light shielding parts 51R, 51G, and 51B of each of the light shielding units 50R, 50G, and 50B of the third embodiment, the light shielding part 51 and a part of the light shielding part 51 are connected to the wire W from the x direction and the y direction. The arrangement may be changed so that they overlap when viewed.

- In the modified example of FIG. 60, the shape of the light shielding part 51 can be changed arbitrarily. In one example, as shown in FIG. 61, the light shielding part 51 may have a convex part 51a. In the illustrated example, the convex portion 51a has a truncated quadrangular pyramid shape that becomes smaller toward the semiconductor light emitting device 30. When viewed from above, the convex portion 51a is formed to cover the entire main surface 30s of the semiconductor light emitting device 30. Note that the shape of the convex portion 51a can be changed arbitrarily. In one example, the convex portion 51a may have a spherical shape or a flat plate shape.

- In the first and second embodiments, the shape of the sealing resin 40 can be changed arbitrarily. For example, as shown in FIG. 62, the shape of the sealing resin 40 viewed from the y direction may be semicircular.

- In the third embodiment, as shown in FIG. 63, the semiconductor light emitting device 1C may include a case 100 that surrounds the semiconductor light emitting elements 30R, 30G, 30B and the Zener diodes 33G, 33B from the x direction and the y direction. good. The case 100 is made of a resin material having electrical insulation properties, and in the illustrated example, it is made of white epoxy resin. The shape of the case 100 when viewed from above is a square frame shape with a bottom.

As shown in FIGS. 64 and 65, the case 100 is integrally formed with the holding member 70 (see FIG. 34) of the third embodiment. That is, the semiconductor light emitting device 1C of the modified example includes the case 100 instead of the holding member 70. For this reason, the case 100 is configured to hold the lead 60 similarly to the holding member 70. In this case, the leads 60 and the case 100 constitute a substrate.

As shown in FIG. 63, the case 100 is provided with a light shielding unit 50. More specifically, the case 100 is provided with a first light shielding unit 50R, a second light shielding unit 50G, and a third light shielding unit 50B, respectively. The case 100, the first light shielding unit 50R, the second light shielding unit 50G, and the third light shielding unit 50B are integrated. In this case, each light shielding unit 50R, 50G, 50B and case 100 may be formed integrally, or each light shielding unit 50R, 50G, 50B and case 100 may be formed separately and then each light shielding unit 50R, 50G, 50B and case 100 may be joined to each other.

Case 100 has a peripheral wall portion 101 . The peripheral wall portion 101 is provided so as to rise from the lead 60 in the z direction. The inner wall surface 102 of the peripheral wall portion 101 is an inclined surface that slopes inward toward the lead 60 in the z direction.

As shown in FIGS. 64 and 65, the opening 103 of the peripheral wall 101 is filled with a sealing resin 80. As shown in FIGS. Each light shielding unit 50R, 50G, 50B is embedded in sealing resin 80. The sealing resin 80 has a main resin surface 80s. In the illustrated example, the main resin surface 80s is flush with the upper surface of the peripheral wall portion 101.

As shown in FIG. 64, similarly to the third embodiment, the light shielding portion 51R of the first light shielding unit 50R is disposed closer to the resin main surface 80s than the first semiconductor light emitting element 30R in the z direction, and is arranged upwardly. It covers the entire element main surface 30Rs of the first semiconductor light emitting element 30R when viewed from above. Further, similarly to the third embodiment, the light shielding portion 51R is arranged closer to the resin main surface 80s than the wire W1 connected to the element main surface 30Rs.

As shown in FIG. 65, similarly to the third embodiment, the light shielding part 51G of the second light shielding unit 50G is arranged closer to the resin main surface 80s than the second semiconductor light emitting element 30G in the z direction, and is arranged upwardly. It covers the entire element main surface 30Gs of the second semiconductor light emitting element 30G when viewed from above. Further, similarly to the third embodiment, the light shielding portion 51G is arranged closer to the resin main surface 80s than the wires W2 and W3 (see FIG. 63) connected to the element main surface 30Gs.

The light shielding part 51B of the third light shielding unit 50B is arranged closer to the resin main surface 80s than the third semiconductor light emitting element 30B in the z direction, and is closer to the element main surface 30Bs of the third semiconductor light emitting element 30B when viewed from above. It covers the whole thing. Further, similarly to the third embodiment, the light shielding portion 51B is arranged closer to the resin main surface 80s than the wires W4 and W5 (see FIG. 63) connected to the element main surface 30Bs.

- In the first embodiment, the light shielding portion 51 of the light shielding unit 50 may be provided with a recessed portion 51h that opens downward. In one example, the shape of the concave portion 51h of the light shielding portion 51 can be changed as shown in (D1) to (D7) below. Note that at least one of the light shielding portions 51R, 51G, and 51B of the light shielding units 50R, 50G, and 50B of the third embodiment may also be provided with a recessed portion 51h.

(D1) The recessed portion 51h of the light shielding portion 51 may be formed in the shape of a truncated quadrangular pyramid that becomes smaller from the lowest portion of the light shielding portion 51 toward the top. As shown in FIG. 66, the shape of the recessed portion 51h of the light shielding portion 51 when viewed from the y direction is a trapezoid. When viewed from the y direction, the recessed portion 51h has a tapered surface 51j that is a side surface that slopes toward each other as it goes upward from the bottom of the light shielding portion 51. In this modification, although not shown, when viewed from the x direction, the recessed portion 51h has a tapered surface that is a side surface that slopes toward each other as it goes upward from the bottom of the light shielding portion 51. There is.

In one example, when viewed from the y direction, the concave portion 51h of the light shielding portion 51 has a tapered surface 51j that is a side surface that slopes toward the center of the concave portion 51h in the x direction. The recess 51h may be provided so that the recess 51h has a rectangular concave shape with side surfaces extending along the z direction.

In one example, when viewed from the x direction, the concave portion 51h of the light shielding portion 51 has a tapered surface 51j that is a side surface that slopes toward the center of the concave portion 51h in the y direction. The recess 51h may be provided so that the recess 51h has a rectangular concave shape with side surfaces extending along the z direction.

(D2) The recessed portion 51h of the light shielding portion 51 may be formed of a curved surface having a single radius of curvature, as shown in FIG. 67. In FIG. 67, the inner surface of the recess 51h is formed of a spherical surface.

(D3) The recessed portion 51h of the light shielding portion 51 may be formed of a curved surface having a plurality of radii of curvature. In one example, as shown in FIG. 68, when viewed from the y direction, the recess 51h has a first curved surface 51k having a first radius of curvature, and a second curved surface having a second radius of curvature larger than the first radius. It consists of a curved surface having 51l. The first curved surface 51k is a curved surface extending upward from the lower surface of the recess 51h in the z direction. The second curved surface 51l is a curved surface connected to the first curved surface 51k. The second curved surface 51l forms at least the bottom surface of the recess 51h.

In one example, when viewed from the y direction, the concave portion 51h of the light shielding portion 51 has a curved surface that curves upward toward the center of the concave portion 51h in the x direction; The concave portion 51h may be provided in a rectangular concave shape having parallel side surfaces.

In one example, when viewed from the x direction, the recess 51h of the light shielding portion 51 has a curved surface that curves upward toward the center of the recess 51h in the y direction, and when viewed from the y direction, the recess 51h extends in the z direction. The concave portion 51h may be provided in a rectangular concave shape having parallel side surfaces.

(D4) As shown in FIG. 69, the concave portion 51h of the light shielding portion 51 may be formed in a triangular pyramid shape that becomes smaller from the bottom of the light shielding portion 51 toward the top.
In one example, when viewed from the y direction, the recessed portion 51h of the light shielding portion 51 has a triangular inner surface that slopes upward toward the center of the recessed portion 51h in the x direction; The recessed portion 51h may be provided in a rectangular recessed shape having side surfaces along the z direction.

In one example, when viewed from the x direction, the recessed portion 51h of the light shielding portion 51 has a triangular inner surface that slopes upward toward the center of the recessed portion 51h in the y direction; The recessed portion 51h may be provided in a rectangular recessed shape having side surfaces along the z direction.

(D6) In (D1) to (D5) above, the shape of the light shielding portion 51 when viewed from the x direction or the y direction is a rectangular flat plate shape, but the shape is not limited to this. For example, as shown in FIG. 70, the light shielding portion 51 may be formed in the shape of a truncated quadrangular pyramid that becomes smaller toward the semiconductor light emitting element 30 in the z direction. The shape of the convex portion 51a of the light shielding portion 51 when viewed from the y direction is a trapezoid. When viewed from the y direction, the convex portion 51a has a tapered surface 51c that is a side surface that slopes toward each other toward the semiconductor light emitting element 30 in the z direction. In this modified example, although not shown, when viewed from the x direction, the convex portion 51a has a tapered surface that is a side surface that slopes toward each other toward the semiconductor light emitting element 30 in the z direction. There is. A concave portion 51h is provided on the lower surface 51x of the convex portion 51a. The shape of the recessed portion 51h is, for example, a truncated quadrangular pyramid like (D1).

(D7) In (D1) to (D6) above, the shape of the light shielding portion 51 when viewed from above is rectangular, but it is not limited to this. For example, the shape of the light shielding part 51 viewed from above may be circular as shown in FIG. 49, for example. In this case, the shape of the recessed portion 51h is arbitrary, but preferably a spherical concave shape. Note that the shape of the light shielding part 51 when viewed from above may be an oval, an ellipse, or an n (n≧5) polygon instead of a circle or a rectangle.

(D8) In the modified example of (D2) shown in FIG. 67, the entire concave portion 51h of the light shielding portion 51 is formed of a spherical surface, but the present invention is not limited to this. For example, only the bottom surface of the recess 51h may be formed into a spherical surface, or a portion including the bottom surface of the recess 51h may be formed into a spherical surface. In short, it is sufficient that at least the bottom surface of the recess 51h is formed into a spherical surface.

In the modified examples (D1) to (D7) above, the recess 51h covers the entire main surface 30s of the semiconductor light emitting device 30 when viewed from above. Note that, when viewed from above, the recessed portion 51h may be configured to cover a part of the element main surface 30s of the semiconductor light emitting element 30.

In the modification example (D8) above, the recessed portion 51h covers a part of the element main surface 30s of the semiconductor light emitting element 30 when viewed from above. Note that the recessed portion 51h may be configured to cover the entire element main surface 30s of the semiconductor light emitting element 30 when viewed from above. In short, the recess 51h only needs to cover at least a portion of the main surface 30s of the semiconductor light emitting device 30 when viewed from above.

- In the second embodiment, the shape of the light shielding part 51 of the light shielding unit 50 viewed from the y direction may be a concave shape concave upward. In one example, the shape of the light shielding portion 51 viewed from the y direction can be changed as shown in (E1) to (E3) below.

(E1) As shown in FIG. 71, the light shielding part 51 has a recessed part 51h made of a spherical surface. In this case, the first resin layer 40A is provided with a spherical convex portion 45D that protrudes upward from the center of the first resin main surface 40As in the x and y directions. The light blocking portion 51 is formed to cover the surface of the convex portion 45D. The second resin layer 40B is formed so as to be in contact with the upper surface 51b of the light shielding part 51 and the first resin main surface 40As. Moreover, the spherical surface of the recessed portion 51h and the surface of the convex portion 45D are in contact with each other. In other words, the surface of the convex portion 45D is a spherical surface.

(E2) As shown in FIG. 72, the light shielding part 51 has a recess 51h in the shape of a truncated quadrangular pyramid that becomes smaller toward the top. In this case, the first resin layer 40A is provided with a truncated quadrangular pyramid-shaped convex portion 45E that protrudes upward from the center of the first resin main surface 40As in the x and y directions. The light shielding portion 51 is formed to cover the surface of the convex portion 45E. The second resin layer 40B is formed so as to be in contact with the upper surface 51b of the light shielding part 51 and the first resin main surface 40As. Further, the inner surface of the recessed portion 51h and the tapered surface serving as the surface of the convex portion 45E are in contact with each other. In other words, the convex portion 45E has a truncated quadrangular pyramid shape.

(E3) As shown in FIG. 73, the light shielding part 51 has a flat recessed part 51h. In this case, the first resin layer 40A is provided with a rectangular parallelepiped-shaped convex portion 45F that protrudes upward from the center of the first resin main surface 40As in the x and y directions. The light shielding portion 51 is formed to cover the surface of the convex portion 45F. The second resin layer 40B is formed so as to be in contact with the upper surface 51b of the light shielding part 51 and the first resin main surface 40As. Further, the inner surface of the recessed portion 51h and the surface of the convex portion 45F are in contact with each other. In other words, the convex portion 45F has a flat plate shape.

Further, in the modification of (E1) above, the tip of the convex portion 45D may be formed from a spherical surface, and the portion closer to the first resin main surface 40As than the tip may be formed from a tapered surface. In short, it is sufficient that the convex portion 45F has at least a spherical tip. In this case, the light shielding portion 51 may be provided only in the portion corresponding to the spherical surface.

In the modified examples (E1) to (E3) above, the recess 51h covers the entire main surface 30s of the semiconductor light emitting device 30 when viewed from above. Note that, when viewed from above, the recessed portion 51h may be configured to cover a part of the element main surface 30s of the semiconductor light emitting element 30. In short, the recess 51h only needs to cover at least a portion of the main surface 30s of the semiconductor light emitting device 30 when viewed from above.

- In the first and second embodiments, the configurations of the discrete type semiconductor light emitting devices 1A and 1B can be changed arbitrarily. Examples include modifications of the semiconductor light emitting device 1A of the first embodiment shown in FIGS. 74 to 81, and modifications of the semiconductor light emitting device 1B of the second embodiment shown in FIGS. 82 to 88.

Modifications of the semiconductor light emitting device 1A of the first embodiment will be described with reference to FIGS. 74 to 79.
As shown in FIG. 74, the sealing resin 40 of the semiconductor light emitting device 1A is formed in a rectangular parallelepiped shape so as to cover the entire main surface 10s of the substrate 10. As shown in FIG. In this case, the main surface insulating layer 23s (see FIG. 1) may be omitted from the semiconductor light emitting device 1A. As shown in FIGS. 74 and 75, the resin side surface 41 is flush with the substrate side surface 11 of the substrate 10, the resin side surface 42 is flush with the substrate side surface 12 of the substrate 10, and the resin side surface 43 is flush with the substrate side surface 11 of the substrate 10. The resin side surface 44 is flush with the substrate side surface 14 of the substrate 10.

In the illustrated example, the first through groove 16 and the second through groove 17 (see FIG. 3) are omitted from the substrate 10. Although not shown, the substrate 10 is provided with a first through hole and a second through hole. The first through hole is provided at the end closer to the substrate side surface 11 of both ends of the substrate 10 in the x direction. A first connection electrode (not shown) is provided on the inner wall surface of the first through hole. This first connection electrode electrically connects the first main surface electrode 21s and the first back electrode 21r. The second through hole is provided at the end closer to the substrate side surface 12 of both ends of the substrate 10 in the x direction. A second connection electrode (not shown) is provided on the inner wall surface of the second through hole. This second connection electrode electrically connects the second main surface electrode 22s and the second back electrode 22r.

The light shielding unit 50 has a flat light shielding part 51. In the illustrated example, the light shielding unit 50 does not have the pair of support parts 52. As shown in FIGS. 75 and 76, similarly to the first embodiment, the light shielding unit 50 is arranged closer to the resin main surface 40s than the semiconductor light emitting element 30 in the z direction. The light shielding unit 50 is arranged closer to the main resin surface 40s than the wire W connected to the semiconductor light emitting element 30 in the z direction.

As shown in FIG. 76, the light shielding portion 51 is formed extending from the resin side surface 43 to the resin side surface 44. As shown in FIG. The shape of the light shielding part 51 when viewed from above is a rectangular shape with the long side direction in the y direction and the short side direction in the x direction. Similar to the first embodiment, the light shielding section 51 is arranged to cover the entire main surface 30s of the semiconductor light emitting device 30 when viewed from above.

Next, with reference to FIGS. 77 to 79, a method for manufacturing the modified semiconductor light emitting device 1A shown in FIGS. 74 to 76 will be described.
Similar to the first embodiment, the manufacturing method of the semiconductor light emitting device 1A of the modified example includes the step of preparing the base material 800, and the steps of preparing the main surface electrode 820s, the back surface electrode 820r (see FIG. 78), and the connection electrode (not shown). The process includes a step of forming a semiconductor light emitting element 30, a step of mounting a semiconductor light emitting element 30, a step of forming a wire W, and a step of forming a back insulating layer 823r (see FIG. 78). Note that, unlike the first embodiment, the method for manufacturing the semiconductor light emitting device 1A of the modified example does not include a step of forming the main surface insulating layer 823s.

The method for manufacturing the semiconductor light emitting device 1A of the modified example includes a step of arranging a light shielding unit holder 860 on the base material 800. In one example, as shown in FIG. 77, the light shielding unit holder 860 is arranged on the base material main surface 801 of the base material 800. The light-shielding unit holder 860 includes a frame 870 surrounding the plurality of semiconductor light emitting elements 30, a plurality of (four in the illustrated example) light-shielding unit connectors 880 provided in the opening 871 of the frame 870, have.

Each light-shielding unit connector 880 extends so as to pass through the opening 871 of the frame 870 in the y direction, and is integrated with the frame 870. In this case, the plurality of light-shielding part connected bodies 880 and the frame body 870 may be formed integrally, or the plurality of light-shielding part connected bodies 880 and the frame body 870 may be formed individually and then each light-shielding part connected body 880 is formed. The frame body 870 may be joined to each other. The plurality of light shielding unit connectors 880 are arranged to be spaced apart from each other in the x direction.

The light-shielding unit holder 860 is arranged on the base material main surface 801 of the base material 800 so that each light-shielding part connection body 880 covers the entire element main surface 30s of the semiconductor light emitting element 30 when viewed from above. In other words, each light-shielding section connection body 880 is a member forming the light-shielding section 51 shown in FIG. 74. As shown in FIG. 78, the plurality of light-shielding unit connectors 880 are arranged apart from each other above each semiconductor light-emitting element 30 in the z direction. Further, the plurality of light shielding unit connectors 880 are arranged apart from each other above each wire W1 in the z direction.

The method for manufacturing the semiconductor light emitting device 1A of the modified example includes a step of forming a resin layer 840. The resin layer 840 is a member that becomes the sealing resin 40 shown in FIG. The resin layer 840 is made of a translucent resin material. In the illustrated example, resin layer 840 is made of, for example, transparent or translucent epoxy resin. In this step, the resin layer 840 is formed by, for example, transfer molding.

As shown in FIG. 79, the method for manufacturing a semiconductor light emitting device 1A according to the modification includes a step of cutting a resin layer 840 and a base material 800. For example, the resin layer 840 and the base material 800 are cut by a dicing blade along a cutting line CL shown by a thick dashed line in FIG. 79 . Thereby, the sealing resin 40, the light shielding unit 50, and the substrate 10 are formed into individual pieces. Through the above steps, a modified semiconductor light emitting device 1A shown in FIG. 74 is manufactured.

Note that in the modified semiconductor light emitting device 1 shown in FIG. 74, the light shielding unit 50 extends over the entirety of the sealing resin 40 in the y direction, and is provided in a part of the sealing resin 40 in the x direction. However, it is not limited to this. For example, as shown in FIG. 80, the light shielding unit 50 may extend over the entirety of the sealing resin 40 in the x direction, and may be provided in a part of the sealing resin 40 in the y direction.

In this case, in the method for manufacturing the semiconductor light emitting device 1 of the modified example, the light shielding unit holder 860 is attached to a frame 870 surrounding the plurality of semiconductor light emitting elements 30 and an opening 871 of the frame 870, as shown in FIG. A plurality of (three in the illustrated example) light shielding unit connectors 880 are provided. The light-shielding unit holder 860 is arranged on the base material main surface 801 of the base material 800 so that each light-shielding part connection body 880 covers the entire element main surface 30s of the semiconductor light emitting element 30 when viewed from above. In other words, each light-shielding section connection body 880 is a member forming the light-shielding section 51 shown in FIG. 74. Although not shown, the plurality of light shielding unit connectors 880 are arranged above and apart from each semiconductor light emitting element 30 in the z direction. Further, the plurality of light shielding unit connectors 880 are arranged apart from each other above each wire W1 in the z direction.

Modifications of the semiconductor light emitting device 1B of the second embodiment will be described with reference to FIGS. 82 to 88.
As shown in FIG. 82, the sealing resin 40 of the semiconductor light emitting device 1B is formed in the shape of a rectangular parallelepiped so as to cover the entire main surface 10s of the substrate 10. As shown in FIG. In this case, the main surface insulating layer 23s may be omitted from the semiconductor light emitting device 1A. As shown in FIG. 82, the resin side surface 41 is flush with the substrate side surface 11 of the substrate 10, and the resin side surface 42 is flush with the substrate side surface 12 of the substrate 10. Further, as shown in FIG. 83, the resin side surface 43 is flush with the substrate side surface 13 of the substrate 10, and the resin side surface 44 is flush with the substrate side surface 14 of the substrate 10.

As shown in FIGS. 82 and 83, the sealing resin 40 includes a first resin layer 40A that covers the semiconductor light emitting element 30 and the wire W, and a first resin layer 40A that is formed on the first resin main surface 40As of the first resin layer 40A. 2 resin layer 40B. In the illustrated example, the first resin layer 40A and the second resin layer 40B are made of the same material. The first resin layer 40A and the second resin layer 40B are each made of a translucent resin material. In the illustrated example, the first resin layer 40A and the second resin layer 40B are each made of, for example, transparent or translucent epoxy resin.

As shown in FIGS. 82 and 83, the light shielding unit 50 has a flat light shielding portion 51. As shown in FIGS. In the illustrated example, the light shielding unit 50 does not have the pair of support parts 52. Similar to the first embodiment, the light shielding unit 50 is arranged closer to the resin main surface 40s than the semiconductor light emitting element 30 in the z direction. The light shielding unit 50 is arranged closer to the main resin surface 40s than the wire W connected to the semiconductor light emitting element 30 in the z direction.

The shape of the light shielding part 51 when viewed from above is a rectangular shape with the long side direction in the y direction and the short side direction in the x direction. Similar to the first embodiment, the light shielding section 51 is arranged to cover the entire main surface 30s of the semiconductor light emitting device 30 when viewed from above.

The structure of the substrate 10, the main surface electrode 20s, the back electrode 20r, and the back insulating layer 23r is the same as the structure of the substrate 10, the main surface electrode 20s, the back electrode 20r, and the back insulating layer 23r of the semiconductor light emitting device 1A shown in FIGS. 74 to 76. is the same as

Next, a method for manufacturing the modified semiconductor light emitting device 1B shown in FIGS. 82 and 83 will be described with reference to FIGS. 84 to 88.
Similar to the first and second embodiments, the method for manufacturing the semiconductor light emitting device 1B of the modified example includes a step of preparing a base material 800, a step of forming a main surface electrode 820s, a back surface electrode 820r, and a connection electrode 824, The process includes a process of mounting the semiconductor light emitting element 30, a process of forming the wire W, and a process of forming the back insulating layer 823r. Note that, unlike the first embodiment, the method for manufacturing the semiconductor light emitting device 1A of the modified example does not include a step of forming the main surface insulating layer 823s.

The method for manufacturing the semiconductor light emitting device 1B of the modified example includes a step of arranging a frame 890 on a base material 800. In one example, as shown in FIG. 84, the frame 890 is arranged on the base material main surface 801 of the base material 800. The frame body 890 surrounds the plurality of semiconductor light emitting elements 30.

The method for manufacturing the semiconductor light emitting device 1B of the modified example includes a step of forming a first resin layer 840A. The first resin layer 840A is a member that becomes the first resin layer 40A shown in FIG. 82. The first resin layer 840A is made of, for example, transparent or translucent epoxy resin. In this step, the first resin layer 840A is formed within the opening 891 of the frame 890 by, for example, transfer molding.

As shown in FIG. 85, the method for manufacturing the semiconductor light emitting device 1B of the modified example includes a step of forming the light shielding unit 50 on the first resin layer 840A. In one example, as shown in FIG. 86, the light shielding unit 50 is formed on the first resin main surface 840As of the first resin layer 840A. The light shielding unit 50 is formed, for example, by potting light shielding nylon onto the first resin main surface 840As using a dispenser device. In this way, a plurality of light shielding units 50 are formed on the first resin main surface 840As. More specifically, as shown in FIG. 85, the plurality of light blocking units 50 are individually formed to cover the entire main surface 30s of each semiconductor light emitting device 30.

As shown in FIG. 87, the method for manufacturing a semiconductor light emitting device 1B according to the modification includes a step of forming a second resin layer 840B. The second resin layer 840B is a member forming the resin layer 40B that covers the light shielding unit 50. In this embodiment, the second resin layer 40B is made of transparent or translucent epoxy resin. In this step, the second resin layer 840B is formed within the opening 891 of the frame 890 by, for example, transfer molding.

As shown in FIG. 88, the method for manufacturing a semiconductor light emitting device 1B according to the modification includes a step of cutting a resin layer 840 and a base material 800. For example, the resin layer 840 and the base material 800 are cut with a dicing blade along the cutting line CL shown by the thick dashed line in FIG. Thereby, the sealing resin 40, the light shielding unit 50, and the substrate 10 are formed into individual pieces. Through the above steps, the semiconductor light emitting device 1B of the modified example is manufactured.

- In the first and third embodiments, the direction in which the pair of support parts 52, 52R, 52G, 52B in the light shielding units 50, 50R, 50G, 50B extends can be arbitrarily changed. In one example, the pair of support parts 52 may extend from the light shielding part 51 in the x direction. The pair of support parts 52 may extend from the light shielding part 51 in a direction different from the x direction and the y direction among the directions orthogonal to the z direction. Each of the pair of support parts 52R, 52G, and 52B may extend along the y direction. In this case, each light shielding unit 50G, 50B is formed integrally.

Moreover, the number of each of the support parts 52, 52R, 52G, and 52B is not limited to two, and can be changed arbitrarily. For example, three or more supporting parts 52, 52R, 52G, 52B may extend from the light shielding parts 51, 51R, 51G, 51B, respectively.

In short, the supporting parts 52, 52R, 52G, and 52B each have a resin layer that allows the light shielding unit 50 in the light shielding unit connection body 850 and the light shielding unit holder 950 to emit semiconductor light when the resin layer is formed in the manufacturing process of the semiconductor light emitting devices 1A to 1C. Any configuration that can suppress movement toward the elements 30, 30R, 30G, and 30B may be used.

- In the first and third embodiments, the material of the pair of support parts 52, 52R, 52G, 52B may be different from the material of the light shielding parts 51, 51R, 51G, 51B. In one example, the pair of supports 52, 52R, 52G, and 52B may be made of a translucent material, such as a transparent or translucent epoxy resin. In this way, if the material of the pair of support parts 52, 52R, 52G, 52B is different from the material of the light shielding parts 51, 51R, 51G, 51B, the material of the pair of support parts 52, 52R, 52G, 52B can be formed by two-color molding, for example. The supporting parts 52, 52R, 52G, and 52B may be integrally formed.

- In the first and third embodiments, the shape of the pair of support parts 52, 52R, 52G, 52B viewed from above can be arbitrarily changed. In one example, as shown in FIG. 89, in a semiconductor light emitting device 1A, the support part 52A of the pair of support parts 52 increases in the x direction as it goes from the resin side surface 43 of the sealing resin 40 toward the light shielding part 51. It may also be formed into a tapered shape that increases in height. Further, when viewed from above, the support portion 52B of the pair of support portions 52 may be formed in a tapered shape such that the size in the x direction increases from the resin side surface 44 of the sealing resin 40 toward the light shielding portion 51.

According to this configuration, the light from the element main surface 30s of the semiconductor light emitting element 30 hits the pair of support parts 52 more easily, so that the intensity of the light emitted upward from the element main surface 30s can be weakened. . Therefore, the difference between the intensity of light emitted upward from the element main surface 30s and the intensity of light around the semiconductor light emitting device 1A becomes small, so that when the semiconductor light emitting device 1A is viewed from above, the semiconductor light emitting device It is possible to prevent the main surface 30s of the element 30 from appearing to shine locally.

- In the first and third embodiments, the size of the convex portion 51a relative to the light shielding portion 51 can be arbitrarily changed. In one example, as shown in FIGS. 90 and 91, the area of the convex portion 51a viewed from above may be smaller than the area of the light shielding portion 51 viewed from above. In the illustrated example, the convex portion 51a has a spherical shape. Note that the shape of the convex portion 51a can be changed arbitrarily.

As shown in FIG. 91, when viewed from above, the area of the convex portion 51a is larger than the area of the element main surface 30s of the semiconductor light emitting element 30. That is, when viewed from above, the convex portion 51a covers the entire main surface 30s of the semiconductor light emitting device 30. Note that the area of the convex portion 51a viewed from above can be changed arbitrarily. In one example, the area of the convex portion 51a viewed from above may be equal to the area of the element main surface 30s of the semiconductor light emitting element 30, or may be smaller than the area of the element main surface 30s.

- In the modified example of FIG. 90 and FIG. 91, the position of the convex part 51a with respect to the light shielding part 51 can be changed arbitrarily when viewed from the z direction. In one example, the convex portion 51a is formed on the light shielding portion 51 such that the center position of the convex portion 51a is different from the center position CX of the light shielding portion 51 in at least one of the x direction and the y direction when viewed from the z direction. You may.

- In each embodiment, the area of the light shielding part 51 viewed from above may be equal to the area of the element principal surface 30s of the semiconductor light emitting element 30 viewed from above.
- In each embodiment, a diffusion plate or a diffusion material for diffusing light may be provided between the semiconductor light emitting elements 30, 30R, 30G, 30B and the light shielding parts 51, 51R, 51G, 51B in the z direction.

- In the first and second embodiments, the semiconductor light emitting device 30 may be changed to a configuration that allows flip-chip mounting, for example. In this case, the wire W is omitted. In one example, the semiconductor light emitting device 30 is packaged so that the first electrode 31 and the second electrode 32 are exposed toward the substrate 10 in the z direction.

(Configuration of semiconductor light emitting device)
- In each embodiment, the configurations of the semiconductor light emitting devices 30, 30R, 30G, and 30B can be changed arbitrarily. In one example, the semiconductor light emitting elements 30, 30R, 30G, and 30B may be configured to emit light in a direction perpendicular to the z direction.

FIG. 92 shows a planar structure of the semiconductor light emitting device 30, and FIG. 93 schematically shows an example of a cross-sectional structure of the semiconductor light emitting device 30 taken along line 93-93 in FIG.
As shown in FIG. 93, the semiconductor light emitting device 30 includes a substrate 300, a metal layer 310, a transparent conductive layer 320, a compound semiconductor layer 330, an anode electrode layer 340, and a cathode electrode layer 350. ing. The semiconductor light emitting device 30 has a structure in which a substrate 300, a metal layer 310, a transparent conductive layer 320, a compound semiconductor layer 330, an anode electrode layer 340, and a cathode electrode layer 350 are laminated in the z direction.

The substrate 300 has a substrate main surface 300s and a substrate back surface 300r facing oppositely to each other in the z direction. The substrate 300 may include a conductive substrate made of a metal material. The conductor substrate may contain at least one of Al, Cu, Au, and Ag as a metal material. The substrate 300 may include a semiconductor substrate made of a semiconductor material instead of or in addition to the conductor substrate. The semiconductor substrate may contain at least one of Si, SiC, Ge, a compound semiconductor, or a nitride semiconductor as a semiconductor material. An example in which the substrate 300 is made of a Si semiconductor substrate will be described below.

In the illustrated example, the shape of the substrate 300 when viewed from above is approximately square. Note that the shape of the substrate 300 viewed from above can be arbitrarily changed. In one example, the shape of the substrate 300 viewed from above may be a rectangle in which one of the x direction and the y direction is the long side direction, and the other of the x direction and the y direction is the short side direction. The thickness of the substrate 300 (the size of the substrate 300 in the z direction) is, for example, 50 μm or more and 300 μm or less.

An anode electrode layer 340 is formed on the back surface 300r of the substrate 300. In the illustrated example, the anode electrode layer 340 is formed to cover the entire back surface 300r of the substrate. The anode electrode layer 340 is made of, for example, Au or an alloy containing Au. More specifically, the anode electrode layer 340 includes a Ti layer in contact with the substrate back surface 300r and an Au layer in contact with the Ti layer. That is, the anode electrode layer 340 has a laminated structure of a Ti layer and an Au layer.

A metal layer 310 is formed on the main substrate surface 300s of the substrate 300. In the illustrated example, the metal layer 310 is formed to cover the entire main surface 300s of the substrate. The thickness of the metal layer 310 (the size of the metal layer 310 in the z direction) is, for example, 0.1 μm or more and 3.0 μm or less.

The metal layer 310 is made of, for example, Au or an alloy containing Au. The metal layer 310 may be a single layer of each of an Au layer and an Au alloy layer (for example, AuBeNi, etc.), or may be a layer in which a plurality of these layers and other metal layers are laminated. When the metal layer 310 has a multilayer structure, it is preferable that at least the contact surface with the transparent conductive layer 320 is made of an Au layer or an Au alloy layer. An example may be an Au/Ti stacked structure in which a Ti layer is formed on the main surface 300s of the substrate and an Au layer is formed in contact with the Ti layer. In this case, the Au layer becomes a layer in contact with the transparent conductive layer 320.

A transparent conductive layer 320 is formed on the metal layer 310. Transparent conductive layer 320 is formed to cover the entire surface of metal layer 310. The thickness of the light-transmitting conductive layer 320 (the size of the light-transmitting conductive layer 320 in the z direction) is, for example, 0.05 μm or more and 0.5 μm or less.

The light-transmitting conductive layer 320 is made of a material that is transparent to the emission wavelength of the light-emitting layer 331, which will be described later. Examples of this material include ITO (indium tin oxide), ZnO (zinc oxide) or IZO (indium zinc oxide).

A compound semiconductor layer 330 is formed on the transparent conductive layer 320. The compound semiconductor layer 330 is made of an epitaxial layer formed by epitaxial growth, for example. The compound semiconductor layer 330 has a main surface 330s and a back surface 330r facing oppositely to each other in the z direction. The back surface 330r of the compound semiconductor layer 330 is in contact with the light-transmitting conductive layer 320.

The compound semiconductor layer 330 includes a light emitting layer 331, a p-type semiconductor layer 332, and an n-type semiconductor layer 333. In the z direction, the p-type semiconductor layer 332 is arranged closer to the substrate 300 than the light-emitting layer 331, and the n-type semiconductor layer 333 is arranged on the opposite side of the substrate 300 than the light-emitting layer 331 is. As can be seen from FIG. 93, the p-type semiconductor layer 332 is in contact with the light-emitting layer 331, and the n-type semiconductor layer 333 is arranged in contact with the light-emitting layer 331 in the z direction. In this way, a double heterojunction is formed from the structure in which the light emitting layer 331 is sandwiched between the p-type semiconductor layer 332 and the n-type semiconductor layer 333 in the z direction. Electrons are injected into the light emitting layer 331 from the n-type semiconductor layer 333 and holes are injected from the p-type semiconductor layer 332. When these are recombined in the light emitting layer 331, light is generated.

The p-type semiconductor layer 332 has a structure in which a p-type contact layer 332a, a p-type window layer 332b, and a p-type cladding layer 332c are laminated in order from the substrate 300 side. The n-type semiconductor layer 333 has a structure in which an n-type cladding layer 333a, an n-type window layer 333b, and an n-type contact layer 333c are laminated in order from the substrate 300 side.

P-type contact layer 332a and n-type contact layer 333c are low resistance layers for making ohmic contact with transparent conductive layer 320 and cathode electrode layer 350, respectively. The p-type contact layer 332a is formed to cover the entire surface of the transparent conductive layer 320 when viewed from above. The p-type contact layer 332a becomes a p-type semiconductor by doping GaP (gallium phosphide) with, for example, C (carbon) as a p-type dopant at a high concentration. The thickness of the p-type contact layer 332a (the size of the p-type contact layer 332a in the z direction) is, for example, 0.1 μm or more and 2.5 μm or less. The n-type contact layer 333c is formed to cover the entire surface of the n-type cladding layer 333a when viewed from above. The n-type contact layer 333c becomes an n-type semiconductor by doping GaAs (gallium arsenide) with, for example, Si as an n-type dopant at a high concentration. The thickness of the n-type contact layer 333c (the size of the n-type contact layer 333c in the z direction) is, for example, 0.1 μm or more and 2.5 μm or less.

The p-type window layer 332b becomes a p-type semiconductor by doping GaP with, for example, Mg (magnesium) as a p-type dopant. The thickness of the p-type window layer 332b (the size of the p-type window layer 332b in the z direction) is 0.1 μm or more and 2.5 μm or less. The n-type window layer 333b becomes an n-type semiconductor by doping AlInGaP with, for example, Si as an n-type dopant. The thickness of the n-type window layer 333b (the size of the n-type window layer 333b in the z direction) is, for example, 2.0 μm or more and 5.0 μm or less.

The p-type cladding layer 332c may be made into a p-type semiconductor by doping GaP with, for example, Mg as a p-type dopant. The thickness of the p-type cladding layer 332c (the size of the p-type cladding layer 332c in the z direction) is, for example, 0.1 μm or more and 2.5 μm or less. The n-type cladding layer 333a becomes an n-type semiconductor by doping GaAs with, for example, Si as an n-type dopant. The thickness of the n-type cladding layer 333a (the size of the n-type cladding layer 333a in the z direction) is, for example, 0.1 μm or more and 2.5 μm or less.

The light-emitting layer 331 has an MQW (Multiple-Quantum Well) structure containing, for example, InGaP, and light is generated when electrons recombine with holes, and the light is amplified. This is the layer of

The light emitting layer 331 has a multiple quantum well structure configured by alternately stacking quantum well layers made of InGaP layers and barrier layers made of AlInGaP layers in a plurality of cycles. In this case, by setting the In composition ratio to 5% or more, the quantum well layer has a relatively small band gap, and the barrier layer has a relatively large band gap. For example, the light emitting layer 331 having a multi-quantum well structure is constructed by alternately stacking quantum well layers and barrier layers repeatedly for 10 to 40 cycles. The thickness of the quantum well layer (the size of the quantum well layer in the z direction) is, for example, 5 nm, and the thickness of the barrier layer (the size of the barrier layer in the z direction) is, for example, 4 nm.

The emission wavelength of the light emitting layer 331 corresponds to the band gap of the quantum well layer, and the band gap is adjusted by adjusting the composition ratio of In. As the composition ratio of In increases, the band gap decreases and the emission wavelength increases. In one example, the emission wavelength is set to 610 nm or more and 680 nm or less (for example, 625 nm) by adjusting the In composition in the quantum well layer.

As shown in FIG. 93, a portion of the compound semiconductor layer 330 is removed to form a mesa portion 334. More specifically, by etching, parts of the n-type semiconductor layer 333, the light-emitting layer 331, and the p-type semiconductor layer 332 are etched from the main surface 330s of the compound semiconductor layer 330 to the entire circumference of the compound semiconductor layer 330 in the x direction and the y direction. has been removed. As a result, a square mesa portion 334 is formed when viewed from the x direction or the y direction. Note that the shape of the mesa portion 334 viewed from the x direction or the y direction can be arbitrarily changed. In one example, the mesa portion 334 has a trapezoidal shape when viewed from the x direction or the y direction.

As shown in FIGS. 92 and 93, in the semiconductor light emitting device 30, a light-transmitting layer 360 is formed to surround the mesa portion 334 from the x direction and the y direction. As shown in FIG. 92, the shape of the light-transmitting layer 360 when viewed from above is a square frame shape. Note that in FIG. 92, dots are attached to the light-transmitting layer 360 so that the light-transmitting layer 360 can be easily distinguished from other layers. The light-transmitting layer 360 is made of an electrically insulating material, such as SiO ₂ (silicon dioxide). As shown in FIG. 93, the surface of the light-transmitting layer 360 is flush with the surface of the n-type contact layer 333c. Here, the surface is a surface facing the same side as the substrate main surface 300s in the z direction.

As shown in FIG. 93, the cathode electrode layer 350 constitutes a main surface electrode, and is made of, for example, Au or an alloy containing Au. In one example, the cathode electrode layer 350 includes an Au layer in contact with the compound semiconductor layer 330 and the light-transmitting layer 360, and an AuGeNi layer in contact with this Au layer. A wire (not shown) is connected to the cathode electrode layer 350. As shown in FIG. 92, the cathode electrode layer 350 is formed to cover the entire surface of the n-type contact layer 333c of the compound semiconductor layer 330 and the entire surface of the light-transmitting layer 360.

According to the semiconductor light emitting device 30 having such a configuration, light generated in the light emitting layer 331 is emitted toward the cathode electrode layer 350, but is reflected by the cathode electrode layer 350 and emitted toward the light transmitting layer 360. be done. That is, the semiconductor light emitting device 30 emits light laterally, which is a direction perpendicular to the z direction. In this way, the cathode electrode layer 350 constitutes a light shielding portion that blocks light from the light emitting layer 331. Note that in a semiconductor light emitting device using the semiconductor light emitting element 30 having such a configuration, the light shielding units 50, 50R, 50G, and 50B may be omitted.

Note that although the semiconductor light emitting device 30 has been described as having a cathode electrode layer 350 serving as a main surface electrode and an anode electrode layer 340 serving as a back surface electrode, the configuration of the semiconductor light emitting device 30 is not limited to this. For example, the semiconductor light emitting device 30 may be configured such that the anode electrode layer 340 is located between the main substrate surface 300s of the substrate 300 and the cathode electrode layer 350 in the z direction.

[Additional notes]
The technical ideas that can be understood from each of the above embodiments and each modification example described above will be described below.

(Additional Note 1) A substrate, a metal layer formed on the substrate, a light emitting layer formed on the metal layer, and a first conductivity type layer disposed near the substrate with respect to the light emitting layer. , a semiconductor layer including a second conductivity type layer disposed on a side opposite to the substrate with respect to the light emitting layer, an electrode layer formed on the second conductivity type layer, the metal layer and the semiconductor layer. a light-transmitting layer formed to surround the light-emitting layer and the second conductivity type layer in a direction perpendicular to the lamination direction, and the electrode layer is arranged to surround the light-emitting layer and the second conductivity type layer when viewed from the lamination direction. A semiconductor light emitting device formed to cover the entire surface of a 2-conductivity type layer.

According to this configuration, light from the light-emitting layer is reflected from the electrode layer and exits from the light-transmitting layer. Therefore, the light from the light emitting layer is blocked by the electrode layer, and the intensity of the light emitted from the light emitting layer in the stacking direction becomes weak. On the other hand, since the light reflected from the electrode layer is emitted from the light-transmitting layer, the intensity of the light emitted from the light-emitting layer in the direction perpendicular to the stacking direction is increased. Therefore, the difference between the intensity of light emitted from the light-emitting layer in the stacking direction and the intensity of light around the semiconductor light-emitting element becomes small, so when the semiconductor light-emitting element is viewed from the stacking direction, the center of the semiconductor light-emitting element It is possible to suppress the appearance of locally shining strongly.

(Additional Note 2) In the semiconductor light emitting device, when viewed from the stacking direction, the light emitting layer and the second conductivity type layer among the semiconductor layers are smaller than the first conductivity type layer and the metal layer over the entire circumference. The semiconductor light emitting device according to appendix 1, which has a mesa portion, and wherein the light-transmitting layer is formed so as to surround the entire circumference of the mesa portion when viewed from the stacking direction.

According to this configuration, it is possible to suppress the semiconductor light emitting device from increasing in size in the direction perpendicular to the stacking direction due to the light-transmitting layer.
(Supplementary note 3) The semiconductor light emitting device according to supplementary note 1 or 2, wherein the electrode layer is formed so as to cover the entire surface of the light-transmitting layer when viewed from the stacking direction.

According to this configuration, light from the light-emitting layer is suppressed from being emitted from the light-transmitting layer in the stacking direction, and the electrode layer makes it easier for light to be emitted from the light-transmitting layer in a direction perpendicular to the stacking direction. Therefore, the difference between the intensity of light emitted from the light-emitting layer in the stacking direction and the intensity of light around the semiconductor light-emitting element becomes smaller, so that when the semiconductor light-emitting element is viewed from the stacking direction, It is possible to further suppress the appearance of a strong local glow in the center.
(Appendix A1)
a substrate having a main surface and a back surface facing oppositely to each other in the thickness direction;
a semiconductor light emitting element having a light emitting main surface that is mounted on the main surface and emits light;
a light shielding part that is disposed apart from the semiconductor light emitting element upward in the thickness direction away from the main light emitting surface and covers at least a portion of the main light emitting surface when viewed from above;
A transparent sealing resin sealing the semiconductor light emitting element while supporting the light shielding part.
Semiconductor light emitting device.
(Appendix A2)
The light shielding portion is embedded within the sealing resin.
The semiconductor light emitting device according to Appendix A1.
(Appendix A3)
When viewed from above, the area of the light shielding portion is larger than the area of the light emitting main surface.
The semiconductor light emitting device according to appendix A1 or A2.
(Appendix A4)
When viewed from above, the light shielding portion covers the entire light emitting main surface.
The semiconductor light emitting device according to any one of appendices A1 to A3.
(Appendix A5)
The light shielding portion has a convex portion protruding toward the semiconductor light emitting element,
The convex portion has a side surface that slopes such that the width of the convex portion in a direction perpendicular to the thickness direction becomes narrower toward the semiconductor light emitting element.
The semiconductor light emitting device according to any one of appendices A1 to A4.
(Appendix A6)
The light shielding portion has a convex portion protruding toward the semiconductor light emitting element,
The convex portion has a curved surface that curves toward each other toward the semiconductor light emitting device.
The semiconductor light emitting device according to any one of appendices A1 to A4.
(Appendix A7)
The light shielding portion has a convex portion protruding toward the semiconductor light emitting element,
At least the tip of the convex portion has a spherical surface.
The semiconductor light emitting device according to any one of appendices A1 to A4.
(Appendix A8)
When viewed from above, the convex portion covers at least a portion of the main light emitting surface.
The semiconductor light emitting device according to any one of appendices A5 to A7.
(Appendix A9)
When viewed from above, the convex portion covers the entire main light emitting surface.
The semiconductor light emitting device according to appendix A8.
(Appendix A10)
The light shielding portion has a concave portion recessed upward, and
The recess has side surfaces that slope such that the width of the recess in a direction perpendicular to the thickness direction becomes narrower toward the semiconductor light emitting element.
The semiconductor light emitting device according to any one of appendices A1 to A4.
(Appendix A11)
The light shielding portion has a concave portion recessed upward, and
The recesses have curved surfaces that curve closer to each other as they move upward.
The semiconductor light emitting device according to any one of appendices A1 to A4.
(Appendix A12)
The light shielding portion has a concave portion recessed upward, and
At least a bottom portion of the recess is made of a spherical surface.
The semiconductor light emitting device according to any one of appendices A1 to A4.
(Appendix A13)
When viewed from above, the recess covers at least a portion of the main light emitting surface.
The semiconductor light emitting device according to any one of appendices A10 to A12.
(Appendix A14)
When viewed from above, the recess covers the entire main light emitting surface.
The semiconductor light emitting device according to appendix A13.
(Appendix A15)
Among the directions orthogonal to the thickness direction, two mutually orthogonal directions are respectively defined as a first direction and a second direction,
The shape of the light emitting main surface viewed from above is a rectangular shape having a pair of first sides extending in the first direction and a pair of second sides extending in the second direction,
When viewed from above, the areas of two regions of the light shielding portion that protrude from the pair of first sides toward the second direction are equal to each other, and the areas of the two regions that respectively protrude from the pair of second sides toward the first direction are equal to each other. The areas of the two protruding areas are equal to each other
The semiconductor light emitting device according to any one of appendices A4 to A14.
(Appendix A16)
When viewed from above, the area of two regions of the light shielding portion that protrude from the pair of first sides toward the second direction, and the area of two regions that protrude from the pair of second sides toward the first direction, respectively. the areas of the two regions are equal to each other
The semiconductor light emitting device according to appendix A15.
(Appendix A17)
When viewed from above, the light shielding section is arranged biased with respect to the semiconductor light emitting element.
The semiconductor light emitting device according to any one of appendices A1 to A14.
(Appendix A18)
Among the directions orthogonal to the thickness direction, two mutually orthogonal directions are respectively defined as a first direction and a second direction,
The shape of the light emitting main surface viewed from above is a rectangular shape having a pair of first sides extending in the first direction and a pair of second sides extending in the second direction,
When viewed from above, the areas of two regions of the light shielding portion that protrude from the pair of first sides toward the second direction are different from each other.
The semiconductor light emitting device according to any one of appendices A4 to A14.
(Appendix A19)
When viewed from above, the areas of two regions of the light shielding portion that protrude from the pair of second sides toward the first direction are different from each other.
The semiconductor light emitting device according to appendix A18.
(Appendix A20)
The light shielding portion has a convex portion protruding toward the semiconductor light emitting element,
In a cross-sectional view of the light shielding portion along a plane along the thickness direction, the convex portion has a first slope portion and a second slope portion that slope toward each other toward the semiconductor light emitting element. and
When viewed from above, the length of one of the portion of the first slope that overlaps with the semiconductor light emitting device and the portion of the second slope that overlaps with the semiconductor light emitting device is equal to the length of the portion of the first slope that overlaps with the semiconductor light emitting device. longer than the other of the portion that overlaps with the semiconductor light emitting device and the portion of the second slope that overlaps with the semiconductor light emitting device;
The semiconductor light emitting device according to any one of appendices A4 to A9.
(Appendix A21)
The semiconductor light emitting device has a holding portion extending from the light shielding portion in a direction perpendicular to the thickness direction.
The semiconductor light emitting device according to any one of appendices A1 to A20.
(Appendix A22)
The holding portion is exposed from a side surface of the sealing resin in a direction perpendicular to the thickness direction.
The semiconductor light emitting device according to appendix A21.
(Appendix A23)
When viewed from above, the light shielding portion covers the entire portion of the sealing resin at the same position as the light shielding portion in the thickness direction.
The semiconductor light emitting device according to any one of appendices A1 to A22.
(Appendix A24)
The semiconductor light emitting device includes a wire connecting the main light emitting surface and the substrate,
The light shielding part is arranged above the wire.
The semiconductor light emitting device according to any one of appendices A1 to A23.
(Appendix A25)
The sealing resin is
a first resin layer covering the semiconductor light emitting device;
a second resin layer disposed above the first resin layer,
The light shielding part is arranged on the first resin layer and covered by the second resin layer.
The semiconductor light emitting device according to any one of appendices A1 to A4.
(Appendix A26)
The first resin layer has a first resin main surface facing the same side as the main surface,
The light shielding portion covers the entire first resin main surface.
The semiconductor light emitting device according to appendix A25.
(Appendix A27)
The first resin layer has a recess that is recessed toward the semiconductor light emitting element,
At least a portion of the light shielding portion is accommodated in the recess.
The semiconductor light emitting device according to appendix A25 or A26.
(Appendix A28)
The recess has tapered inner surfaces that slope toward each other toward the semiconductor light emitting device, and
The light shielding portion is formed along the tapered inner surface.
The semiconductor light emitting device according to appendix A27.
(Appendix A29)
The recess has a curved inner surface that curves closer to each other toward the semiconductor light emitting element,
The light shielding portion is formed along the curved inner surface.
The semiconductor light emitting device according to appendix A27.
(Appendix A30)
At least the bottom of the recess is made of a spherical surface,
The light shielding portion is formed along the spherical surface.
The semiconductor light emitting device according to appendix A27.
(Appendix A31)
The light shielding section includes a reflecting member that reflects light from the semiconductor light emitting element.
The semiconductor light emitting device according to any one of Appendices A1 to A30.
(Appendix A32)
The semiconductor light emitting device includes a plurality of the semiconductor light emitting elements and a plurality of the light shielding parts,
The plurality of light shielding parts are individually arranged with respect to the plurality of semiconductor light emitting elements.
The semiconductor light emitting device according to any one of appendices A1 to A31.
(Appendix A33)
The light shielding part is made of a light shielding resin material.
The semiconductor light emitting device according to any one of appendices A1 to A32.
(Appendix A34)
The light shielding part is made of a metal material.
The semiconductor light emitting device according to any one of appendices A1 to A32.
(Appendix A35)
The holding portion is made of a light-shielding resin material.
The semiconductor light emitting device according to appendix A21 or A22.
(Appendix A36)
preparing a substrate having a main surface and a back surface facing oppositely to each other in the thickness direction;
a step of mounting a semiconductor light emitting element having a light emitting main surface that emits light on the main surface;
A light shielding portion is arranged with respect to the semiconductor light emitting element so as to be spaced upward in the thickness direction away from the main light emitting surface, and to cover at least a portion of the main light emitting surface when viewed from above. process and
forming a translucent resin layer for sealing the semiconductor light emitting element.
A method for manufacturing a semiconductor light emitting device.
(Appendix A37)
preparing a substrate having a main surface and a back surface facing opposite to each other in the thickness direction;
a step of mounting a semiconductor light emitting element having a light emitting main surface that emits light on the main surface;
forming a first resin layer for sealing the semiconductor light emitting device;
providing a light shielding portion on the first resin layer that covers at least a portion of the light emitting main surface;
forming a second resin layer for sealing the light shielding part.
A method for manufacturing a semiconductor light emitting device.
(Appendix A38)
The light shielding portion is formed on the first resin layer by potting.
A method for manufacturing a semiconductor light emitting device according to appendix A37.

1A, 1B, 1C...Semiconductor light emitting device 10...Substrate 10s...Substrate main surface (main surface)
10r…Back side of board (back side)
30... Semiconductor light emitting element 30a... First side 30b... Second side 30s... Element main surface (light emitting main surface)
30r...Element back surface 30R...First semiconductor light emitting element 30Rs...Element main surface (light emitting main surface)
30G...Second semiconductor light emitting element 30Gs...Element main surface (light emitting main surface)
30B...Third semiconductor light emitting element 30Bs...Element main surface (light emitting main surface)
40... Sealing resin 40A... First resin layer 40As... First resin main surface 40B... Second resin layer 41-44... Resin side surface (side surface of sealing resin)
45, 45A, 45B, 45C... Concave portion 51, 51R, 51G, 51B... Light blocking portion 51a, 51Ra, 51Ga, 51Ba... Convex portion 51c... Tapered surface 51h... Concave portion 52, 52R, 52G, 52B... Holding portion 80... Sealing Resin 90... Reflective member 840... Resin layer 840A... First resin layer 840As... First resin main surface 840B... Second resin layer 951R, 951G, 951B... Light shielding part 980... Resin layer W, W1 to W5... Wire R1, Rr1 , Rg1, Rb1...Protruding area (protruding area)
R2, Rr2, Rg2, Rb2...Protruding area (protruding area)
R3, Rr3, Rg3, Rb3...Protruding area (protruding area)
R4, Rr4, Rg4, Rb4...Protruding area (protruding area)

Claims (13)

a substrate having a main surface and a back surface;
a semiconductor light emitting element having a light emitting main surface that is mounted on the main surface and emits light ;
a translucent sealing resin provided on the main surface, having a resin main surface facing the same side as the main surface of the substrate, and sealing the semiconductor light emitting element;
embedded in the sealing resin, and spaced apart upward from the light emitting main surface and downward from the resin main surface with respect to the semiconductor light emitting element in the thickness direction of the substrate. a light shielding portion that covers the entire light emitting main surface when viewed from above;
Equipped with
The light-shielding portion has a convex portion that protrudes toward the semiconductor light-emitting element, and in a cross-sectional view of the light-shielding portion taken along a plane along the thickness direction, the convex portion protrudes toward the semiconductor light-emitting element. It has a first curved surface and a second curved surface that curve toward each other as they move toward the surface,
the first curved surface has a first radius of curvature;
The second curved surface has a second radius of curvature smaller than the first radius of curvature of the first curved surface,
When viewed from above, the length of the first portion of the first curved surface that overlaps with the semiconductor light emitting device is longer than the length of the second portion of the second curved surface that overlaps with the semiconductor light emitting device.
Semiconductor light emitting device. The semiconductor light emitting device according to claim 1 , wherein the area of the light shielding portion is larger than the area of the main light emitting surface when viewed from above. Among the directions orthogonal to the thickness direction, two mutually orthogonal directions are respectively defined as a first direction and a second direction,
The shape of the light emitting main surface viewed from above is a rectangular shape having a pair of first sides extending in the first direction and a pair of second sides extending in the second direction,
When viewed from above, the areas of two regions of the light shielding portion that protrude from the pair of first sides toward the second direction are equal to each other, and the areas of the two regions that respectively protrude from the pair of second sides toward the first direction The semiconductor light emitting device according to claim 1 or 2, wherein the areas of the two protruding regions are equal to each other. When viewed from above, the area of two regions of the light shielding portion that protrude from the pair of first sides toward the second direction, and the area of two regions that protrude from the pair of second sides toward the first direction, respectively. 4. The semiconductor light emitting device according to claim 3 , wherein the areas of the two regions are equal to each other. The semiconductor light emitting device according to any one of claims 1 to 4 , wherein the semiconductor light emitting device has a holding portion extending from the light shielding portion in a direction perpendicular to the thickness direction. The semiconductor light emitting device according to claim 5 , wherein the holding portion is exposed from a side surface of the sealing resin in a direction perpendicular to the thickness direction. The semiconductor according to any one of claims 1 to 6 , wherein the light shielding portion covers the entire portion of the sealing resin at the same position as the light shielding portion in the thickness direction when viewed from above. Light emitting device. The semiconductor light emitting device includes a wire connecting the main light emitting surface and the substrate,
The semiconductor light emitting device according to any one of claims 1 to 7 , wherein the light shielding part is arranged above the wire. The semiconductor light emitting device according to any one of claims 1 to 8 , wherein the light shielding section includes a reflecting member that reflects light from the semiconductor light emitting element. The semiconductor light emitting device includes a plurality of the semiconductor light emitting elements and a plurality of the light shielding parts,
The semiconductor light emitting device according to any one of claims 1 to 9 , wherein the plurality of light shielding parts are individually arranged with respect to the plurality of semiconductor light emitting elements. The semiconductor light emitting device according to any one of claims 1 to 10 , wherein the light shielding portion is made of a light shielding resin material. The semiconductor light emitting device according to any one of claims 1 to 10 , wherein the light shielding part is made of a metal material. The semiconductor light emitting device according to claim 5 or 6 , wherein the holding portion is made of a light-shielding resin material.