JP7403944B2 - LED light emitting device - Google Patents
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- JP7403944B2 JP7403944B2 JP2018104046A JP2018104046A JP7403944B2 JP 7403944 B2 JP7403944 B2 JP 7403944B2 JP 2018104046 A JP2018104046 A JP 2018104046A JP 2018104046 A JP2018104046 A JP 2018104046A JP 7403944 B2 JP7403944 B2 JP 7403944B2
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- 238000000576 coating method Methods 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 239000004332 silver Substances 0.000 claims description 10
- 229920002050 silicone resin Polymers 0.000 claims description 6
- 239000003822 epoxy resin Substances 0.000 claims description 4
- -1 fluororesin Polymers 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 9
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- 239000000919 ceramic Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
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- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
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- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
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Description
本発明は、４３５ｎｍ以下の波長の光を射出するＬＥＤ素子を備えたＬＥＤ発光装置に関するものである。 The present invention relates to an LED light emitting device including an LED element that emits light with a wavelength of 435 nm or less.
ＬＥＤ発光装置の基板にＬＥＤ素子を取り付ける方法として、銀などの金属を含有するペースト状の導電性接合材を用いる方法が知られている。
この方法で基板にＬＥＤ素子を取り付ける場合、特許文献１に記載されているように、前記導電性接合材に含まれる銀などの金属が空気中の硫黄と反応して硫化されることがある。
硫化が起こると、前記導電性接合材が黒変して製品の見た目が悪くなるだけでなく、前記導電性接合材の導電性、熱伝導性、接合強度などが低下してしまう。
そこで、前記導電性接合材が空気に触れないように、樹脂等の封止材を用いてＬＥＤ素子全体を覆うように封止して、前記導電性接合材の硫化を防ぐことが考えられる。
As a method for attaching an LED element to a substrate of an LED light emitting device, a method using a paste-like conductive bonding material containing a metal such as silver is known.
When attaching an LED element to a substrate using this method, as described in Patent Document 1, metals such as silver contained in the conductive bonding material may react with sulfur in the air and become sulfurized.
When sulfidation occurs, the conductive bonding material not only turns black and the appearance of the product becomes poor, but also the conductivity, thermal conductivity, bonding strength, etc. of the conductive bonding material decreases.
Therefore, in order to prevent the conductive bonding material from coming into contact with the air, it may be possible to seal the LED element using a sealing material such as resin so as to cover the entire LED element to prevent the conductive bonding material from sulfiding.
しかしながら、従来からＬＥＤ素子を封止する封止材として使用されている樹脂は波長が４３５ｎｍ以下の紫光や紫外光などの短波長の光に対する耐性が低い。
ＬＥＤ素子が４３５ｎｍ以下の波長の光を射出するものである場合、ＬＥＤ素子全体をこのような封止材で覆ってしまうと、前記ＬＥＤ素子から射出される光によって該封止材が劣化し、クラックや変色が生じてしまうことがある。
前記封止材にクラックが発生すると、ボンディングワイヤが切断されてＬＥＤ素子が不点灯になったり、前記封止材の切片が剥離して屑が出たりする恐れがある。
また、前記封止材が変色するとＬＥＤ素子からの光出力が低下するという問題がある。
However, resins conventionally used as sealants for sealing LED elements have low resistance to short wavelength light such as violet light or ultraviolet light having a wavelength of 435 nm or less.
When the LED element emits light with a wavelength of 435 nm or less, if the entire LED element is covered with such a sealing material, the sealing material will be deteriorated by the light emitted from the LED element, Cracks and discoloration may occur.
If a crack occurs in the sealing material, there is a possibility that the bonding wire may be cut and the LED element will not light up, or a piece of the sealing material may peel off and debris may come out.
Furthermore, there is a problem in that when the sealing material changes color, the light output from the LED element decreases.
また、紫外光に対して耐性を有する、例えばフッ素系樹脂を前記封止材として使用することも考えられるが、このような素材は原料価格が高い。
また、封止作業時によれたり気泡を含んだりしやすかったり、ＬＥＤ素子やセラミックスおよび金属に対する密着性が低い傾向にあり、従来からＬＥＤを封止するために使用されている封止材を使用する場合よりも作業が難しく新たな工夫も必要になるので、ＬＥＤ発光装置の製造コストが上昇してしまう。
さらに、紫外光に対して耐性を有する樹脂の中には、光吸収が大きいものもあり、光出力が低下してしまうという問題もある。
It is also conceivable to use, for example, a fluororesin that is resistant to ultraviolet light as the sealing material, but such a material is expensive as a raw material.
In addition, it tends to twist or contain bubbles during the sealing process, and its adhesion to LED elements, ceramics, and metals tends to be low. Since the work is more difficult than in the case of conventional methods and new measures are required, the manufacturing cost of the LED light emitting device increases.
Furthermore, some resins that are resistant to ultraviolet light have a large amount of light absorption, resulting in a reduction in light output.
本発明は、上記課題に鑑みてなされたものであり、製造コストの上昇を抑えながら、信頼性の高いＬＥＤ発光装置を提供することを目的とするものである。 The present invention has been made in view of the above problems, and an object of the present invention is to provide a highly reliable LED light emitting device while suppressing an increase in manufacturing costs.
すなわち、本発明に係るＬＥＤ発光装置は、基板と、該基板に取り付けられた４３５ｎｍ以下の波長の光を射出するＬＥＤ素子と、前記基板と前記ＬＥＤ素子との間に配置されてこれらを電気的に接続する導電性接合材とを備えたものであり、さらに前記導電性接合材を被覆する被覆材を備え、前記被覆材が、前記ＬＥＤ素子の側面の一部又は全部を覆い、前記ＬＥＤ素子の前記基板とは反対側の面が露出していることを特徴とするものである。 That is, the LED light emitting device according to the present invention includes a substrate, an LED element attached to the substrate that emits light with a wavelength of 435 nm or less, and an electrically connected LED element disposed between the substrate and the LED element. and a conductive bonding material that is connected to the conductive bonding material, and further includes a coating material that covers the conductive bonding material, and the coating material covers part or all of the side surface of the LED element, and the LED element The surface of the substrate opposite to the substrate is exposed.
このように構成されたＬＥＤ発光装置によれば、前記ＬＥＤ発光装置が前記導電性接合材を被覆する被覆材を備えているので、前記導電性接合材の硫化を防止もしくは低減することができる。
さらに、前記被覆材が、前記ＬＥＤ素子の表面のうち、前記ＬＥＤ素子の側面の一部又は全部を覆うものであり、前記ＬＥＤ素子の前記基板とは反対側の面が露出しているので、前記被覆材に対して前記ＬＥＤ素子から照射される紫光や紫外光の量を減らして、前記被覆材の紫外光による劣化を抑えることができる。
According to the LED light emitting device configured in this manner, since the LED light emitting device includes a coating material that covers the conductive bonding material, sulfurization of the conductive bonding material can be prevented or reduced.
Furthermore, the covering material covers part or all of the side surface of the LED element among the surfaces of the LED element, and the surface of the LED element opposite to the substrate is exposed. By reducing the amount of violet light or ultraviolet light irradiated onto the coating material from the LED element, it is possible to suppress deterioration of the coating material due to ultraviolet light.
本発明の効果が特に顕著になる具体的な実施態様としては、前記導電性接合材が銀を含有するものを挙げることができる。 A specific embodiment in which the effects of the present invention are particularly significant is one in which the conductive bonding material contains silver.
前記ＬＥＤ素子が、支持基板層と、該支持基板層の前記基板とは反対側の表面に取り付けられた半導体層とを備えたものであって、前記支持基板層の前記半導体層が取り付けられている面とは反対側の面が前記基板に取り付けられており、前記被覆材が前記支持基板層の側面の一部又は全部を被覆するものであれば、前記半導体層中に存在する発光層から射出された紫光や紫外光が前記被覆材に照射されにくいので、前記被覆材の紫光や紫外光による劣化をより低減することができる。 The LED element includes a support substrate layer and a semiconductor layer attached to a surface of the support substrate layer opposite to the substrate, and the semiconductor layer of the support substrate layer is attached to the surface of the support substrate layer opposite to the substrate. If the surface opposite to the side surface that is attached to the substrate is attached to the substrate, and the coating material covers part or all of the side surface of the supporting substrate layer, the light-emitting layer present in the semiconductor layer Since the emitted violet light or ultraviolet light is less likely to be irradiated onto the coating material, deterioration of the coating material due to the violet light or ultraviolet light can be further reduced.
前記被覆材が、さらに前記半導体層の側面の一部又は全部を覆うものであっても良い。 The covering material may further cover part or all of the side surface of the semiconductor layer.
前記被覆材が、シリコーン樹脂、フッ素樹脂、エポキシ樹脂からなる群より選ばれる１種又は２種以上の化合物を含有するものであれば、前記被覆材に高いガスバリア性を持たせることができるので、前記導電性接合材の硫化をより効果的に抑えることができる。 If the coating material contains one or more compounds selected from the group consisting of silicone resin, fluororesin, and epoxy resin, the coating material can have high gas barrier properties. Sulfurization of the conductive bonding material can be suppressed more effectively.
前記支持基板層が、金属を含有するものであれば、金属は非透光性であるので、前記被覆材に照射される光をさらに低減することができる。 If the supporting substrate layer contains a metal, the light irradiated onto the coating material can be further reduced since the metal is non-transparent.
本発明によれば、導電性接合材を被覆材により被覆しているので、前記導電性接合材の硫化を防止もしくは低減することができる。
さらに、ＬＥＤ素子の基板とは反対側の面を露出させているので、被覆材がＬＥＤ素子の全体を覆っている場合に比べ、ＬＥＤ素子から被覆材に照射される紫光や紫外光の量を減らすことができる。
その結果、ＬＥＤ素子として、高出力のものを使用したとしても、被覆材の紫光や紫外光による劣化を抑えることができる。
According to the present invention, since the conductive bonding material is covered with the coating material, sulfidation of the conductive bonding material can be prevented or reduced.
Furthermore, since the side of the LED element opposite to the substrate is exposed, the amount of violet and ultraviolet light irradiated from the LED element to the coating material is reduced compared to when the coating material covers the entire LED element. can be reduced.
As a result, even if a high-power LED element is used, deterioration of the coating material due to violet light or ultraviolet light can be suppressed.
被覆材として、従来からＬＥＤ素子の封止材として使用されている樹脂を問題なく使用することができるので、製造コストを抑えながら、信頼性が高く、高出力なＬＥＤ発光装置を提供することができる。 As the coating material, the resin that has been conventionally used as a sealing material for LED elements can be used without any problems, so it is possible to provide a highly reliable and high output LED light emitting device while keeping manufacturing costs down. can.
以下に、本発明の一実施形態について、図面を用いて説明する。
本実施形態に係るＬＥＤ発光装置１００は、例えば、表面実装型のものであり、印刷、接着、コーティング等の分野をはじめとした様々な用途に広く使用できるものである。
An embodiment of the present invention will be described below with reference to the drawings.
The LED light emitting device 100 according to the present embodiment is, for example, a surface-mounted device, and can be widely used in various applications including fields such as printing, adhesion, and coating.
本実施形態に係るＬＥＤ発光装置１００は、図１及び図２に示すように、基板１と、該基板１の表面上に取り付けられたＬＥＤ素子２と、該ＬＥＤ素子２と前記基板１とを電気的に接続する導電性接合材３とを備えたものである。
以下に各部について詳述する。
As shown in FIGS. 1 and 2, the LED light emitting device 100 according to the present embodiment includes a substrate 1, an LED element 2 mounted on the surface of the substrate 1, and the LED element 2 and the substrate 1. It is provided with a conductive bonding material 3 for electrical connection.
Each part will be explained in detail below.
前記基板１は、例えば、面板部が略正方形状のものであり、例えば、ベースとなるセラミックと、銅などからなる電極パターンと、ニッケル、パラジウム、金などからなるボンディングパッド等を備えたものである。この基板１の表面中央部には、前記ＬＥＤ素子２が取り付けられている。 The substrate 1 has, for example, a substantially square face plate portion, and includes, for example, a ceramic base, an electrode pattern made of copper, etc., and bonding pads made of nickel, palladium, gold, etc. be. The LED element 2 is attached to the center of the surface of the substrate 1.
該ＬＥＤ素子２は、例えば、波長が４３５ｎｍ以下の高出力の光を射出するものであり、直方体形状をしている。
前記ＬＥＤ素子２は、図２に示すように、金属を含有し導電性を有する支持基板層２１と、該支持基板層２１の一表面に取り付けられた半導体層２２とを備えたものである。
The LED element 2 emits high-output light having a wavelength of 435 nm or less, for example, and has a rectangular parallelepiped shape.
As shown in FIG. 2, the LED element 2 includes a support substrate layer 21 containing metal and having conductivity, and a semiconductor layer 22 attached to one surface of the support substrate layer 21.
前記支持基板層２１は、例えば、金、銀、ニッケル、銅モリブデン合金、銅タングステン合金、シリコン、金錫合金などの金属からなるものであり、前記半導体層２２が取り付けられた面とは反対側が前記基板１側に向くように、前記導電性接合材３を介して前記基板１に取り付けられている。
この実施形態では、前記支持基板層２１は、前記半導体層２２から前記支持基板層２１側に向けて射出される光を前記半導体層２２側に向けて反射する反射層を備えている。
前記反射層は、例えば、銀等の金属からなる薄板状のものであり、前記支持基板層２１の前記半導体層２２と接している表面を形成するように設けられている。
前記半導体層２２は、窒化ガリウム等からなるものであり、そのｎ電極又はｐ電極の一方が、前記支持基板層２１と前記導電性接合材３を介して前記基板１と電気的に接続されている。前記ｎ電極又はｐ電極のうちのもう一方は、例えば、図示しないボンディングワイヤを介して前記基板１と電気的に接続されている。
The support substrate layer 21 is made of a metal such as gold, silver, nickel, copper-molybdenum alloy, copper-tungsten alloy, silicon, or gold-tin alloy, and has a surface opposite to the surface on which the semiconductor layer 22 is attached. It is attached to the substrate 1 via the conductive bonding material 3 so as to face the substrate 1 side.
In this embodiment, the support substrate layer 21 includes a reflective layer that reflects light emitted from the semiconductor layer 22 toward the support substrate layer 21 side toward the semiconductor layer 22 side.
The reflective layer is, for example, a thin plate made of metal such as silver, and is provided so as to form a surface of the support substrate layer 21 that is in contact with the semiconductor layer 22 .
The semiconductor layer 22 is made of gallium nitride or the like, and one of its n-electrode and p-electrode is electrically connected to the substrate 1 via the support substrate layer 21 and the conductive bonding material 3. There is. The other one of the n-electrode and the p-electrode is electrically connected to the substrate 1 via, for example, a bonding wire (not shown).
前記導電性接合材３は、例えば、銀と、樹脂と、溶剤とを含有するペースト状の接合材であり、前記基板１と前記ＬＥＤ素子２との間に配置されて、前記ＬＥＤ素子２を前記基板１に固定するものである。
前記導電性接合材３に含まれる樹脂としては、例えば、エポキシ樹脂やシリコーン樹脂などを挙げることができる。
The conductive bonding material 3 is a paste-like bonding material containing, for example, silver, resin, and a solvent, and is disposed between the substrate 1 and the LED element 2 to bond the LED element 2. It is fixed to the substrate 1.
Examples of the resin contained in the conductive bonding material 3 include epoxy resin and silicone resin.
しかして、前記ＬＥＤ発光装置１００は、さらに前記導電性接合材３を被覆する被覆材４を備えたものである。
該被覆材４は、例えば、シリコーン等の樹脂であり、前記導電性接合材３が空気にふれないように、前記基板１と前記ＬＥＤ素子２との間からはみ出した部分である前記導電性接合材３のフィレット部分３１を完全に覆うように配置されている。
Thus, the LED light emitting device 100 further includes a coating material 4 that covers the conductive bonding material 3.
The covering material 4 is, for example, a resin such as silicone, and the conductive bonding material 3 protrudes from between the substrate 1 and the LED element 2 to prevent the conductive bonding material 3 from coming into contact with air. It is arranged so as to completely cover the fillet portion 31 of the material 3.
このとき前記被覆材４は、前記導電性接合材３だけではなく、前記基板１の表面の一部及び前記ＬＥＤ素子２の側面２ｓの一部をも覆っており、例えば、図２に示すように、前記ＬＥＤ素子２の前記支持基板層２１の高さまでを覆うようにしてある。前記ＬＥＤ素子の側面２ｓとは、前記ＬＥＤ素子の前記基板と対向する面及び前記基板と対向する面とは反対側の面を除く表面のことである。 At this time, the covering material 4 covers not only the conductive bonding material 3 but also a part of the surface of the substrate 1 and a part of the side surface 2s of the LED element 2, for example, as shown in FIG. In addition, it is designed to cover up to the height of the support substrate layer 21 of the LED element 2. The side surface 2s of the LED element refers to the surface of the LED element excluding the surface facing the substrate and the surface opposite to the surface facing the substrate.
本実施形態に係るＬＥＤ発光装置１００の製造方法は以下のようなものである。
前記基板１に、適量の前記導電性接合材３を塗布する。
次に、前記ＬＥＤ素子２の前記支持基板層２１を前記基板１側に向けた状態で前記導電性接合材３に押し付け、前記導電性接合材を熱硬化させることで前記ＬＥＤ素子２を前記基板１に取り付ける。
前記基板１と前記ＬＥＤ素子２との間から外側にはみ出した前記導電性接合材３のフィレット部分３１を全て覆うように、前記基板１の表面から前記ＬＥＤ素子２の側面２ｓにわたって前記被覆材４を塗布し、熱硬化させる。
前記被覆材４は、およそ１０μｍ以上５００μｍ以下の厚みで塗布することが好ましい。
The method for manufacturing the LED light emitting device 100 according to this embodiment is as follows.
An appropriate amount of the conductive bonding material 3 is applied to the substrate 1 .
Next, the support substrate layer 21 of the LED element 2 is pressed against the conductive bonding material 3 with the supporting substrate layer 21 facing the substrate 1 side, and the conductive bonding material is thermally cured, thereby attaching the LED element 2 to the substrate. Attach to 1.
The covering material 4 is applied from the surface of the substrate 1 to the side surface 2s of the LED element 2 so as to completely cover the fillet portion 31 of the conductive bonding material 3 that protrudes outward from between the substrate 1 and the LED element 2. Apply and heat cure.
The coating material 4 is preferably applied to a thickness of approximately 10 μm or more and 500 μm or less.
このように構成したＬＥＤ発光装置１００によれば、前記被覆材４が、前記支持基板層２１の高さまでを被覆し、前記半導体層２２が露出するようにしてあるので、前記半導体層２２中に存在する発光層から射出される光の多くはそのまま外部に放出され、前記被覆材４に対して照射される光の量を少なく抑えることができる。
前記被覆材４がシリコーン樹脂であれば、厚く塗布することが容易であり、しかも、ＬＥＤ素子２に対する密着性が高いので、密着性を高めるための特別な工夫をしなくても、結果としてガスバリア性が高まり、前記導電性接合材３の硫化を効率的に抑えることができる。
According to the LED light emitting device 100 configured in this way, the covering material 4 covers up to the height of the supporting substrate layer 21 and the semiconductor layer 22 is exposed. Most of the light emitted from the existing light-emitting layer is emitted to the outside as it is, and the amount of light irradiated onto the covering material 4 can be suppressed to a small level.
If the coating material 4 is a silicone resin, it is easy to apply it thickly and the adhesiveness to the LED element 2 is high, so that the gas barrier can be improved without any special measures to improve the adhesiveness. The conductive bonding material 3 can be effectively prevented from being sulfurized.
また、前記被覆材４が前記ＬＥＤ素子２の前記支持基板層２１の高さまでを覆うようにしてあるので、前記被覆材４の厚みが十分確保されており、前記導電性接合材３の硫化をより効果的に抑えることができる。
さらに、シリコーン樹脂は、光の取り出し効率が高いので、紫外ＬＥＤ発光装置１００の光出力を低下させる恐れがない。
Furthermore, since the covering material 4 covers up to the height of the support substrate layer 21 of the LED element 2, the thickness of the covering material 4 is ensured sufficiently, and the sulfidation of the conductive bonding material 3 is prevented. can be suppressed more effectively.
Furthermore, since silicone resin has high light extraction efficiency, there is no risk of reducing the light output of the ultraviolet LED light emitting device 100.
前記導電性接合材３の大半は銀から構成されており、揮発性成分が金属微粉末と、フラックスと、溶剤とからなる半田ペーストに比べて非常に少ないため、前記導電性接合材３のボイド率を低減することができる。その結果、前記紫外ＬＥＤ発光装置１００の放熱効率を向上させることができる。
前記支持基板層２１が、金属からなるものであるので、前記基板１と前記半導体層２２とを電気的に接続する際に、電流を前記ＬＥＤ素子のｎ型半導体層、発光層及びｐ型半導体層の積層方向に流せる垂直構造とすることができ、その結果、電流密度の集中を防ぎ、発光効率および信頼性を向上させる機能を果たしている。
前記支持基板層２１が、金属からなるものであることにより、前記支持基板層２１の線膨張係数を前記半導体層２２の線膨張係数に近づけることができる、さらに、前記支持基板層２１の放熱性を向上させることができる等の効果も奏することができる。
前記支持基板層２１が、銀等の金属からなる反射層を備えているので、前記半導体層２２から、前記支持基板層２１側に向けて射出される光を前記半導体層２２側に向けて反射することができる。
その結果、光の取り出し効率を向上させるとともに、前記被覆材４に照射される光をさらに低減することができる。
さらに、前記反射層が、銀等の前記半導体層とオーミック接触が可能な金属からなるものであるので、前記反射層が前記半導体層と前記支持基板層とを電気的に接続するｎ電極又はｐ電極としての役割を兼ねることも可能である。
Most of the conductive bonding material 3 is composed of silver, and since the volatile components are very small compared to the solder paste consisting of fine metal powder, flux, and solvent, voids in the conductive bonding material 3 are rate can be reduced. As a result, the heat dissipation efficiency of the ultraviolet LED light emitting device 100 can be improved.
Since the supporting substrate layer 21 is made of metal, when electrically connecting the substrate 1 and the semiconductor layer 22, current is passed through the n-type semiconductor layer, the light emitting layer and the p-type semiconductor layer of the LED element. It can have a vertical structure that allows current to flow in the stacking direction of the layers, thereby preventing concentration of current density and improving luminous efficiency and reliability.
Since the support substrate layer 21 is made of metal, the coefficient of linear expansion of the support substrate layer 21 can be made close to the coefficient of linear expansion of the semiconductor layer 22, and furthermore, the heat dissipation property of the support substrate layer 21 can be improved. It is also possible to achieve effects such as being able to improve.
Since the support substrate layer 21 includes a reflective layer made of metal such as silver, light emitted from the semiconductor layer 22 toward the support substrate layer 21 side is reflected toward the semiconductor layer 22 side. can do.
As a result, the light extraction efficiency can be improved and the light irradiated onto the coating material 4 can be further reduced.
Furthermore, since the reflective layer is made of a metal such as silver that can make ohmic contact with the semiconductor layer, the reflective layer may be an n-electrode or a p-electrode that electrically connects the semiconductor layer and the supporting substrate layer. It is also possible to serve as an electrode.
なお、本発明は前記実施形態に限られるものではない。
前記被覆材４による被覆高さは、前記導電性接合材３のフィレット部が全て覆われ、かつ、前記ＬＥＤ素子２の前記半導体層２２の表面が外部に露出する高さであれば良い。
例えば、図３（ａ）に示すように、前記ＬＥＤ素子２の側面２ｓを全て覆う高さまで被覆していてもよいし、図３（ｂ）に示すように、前記支持基板層２１の側面２１ｓの全てと、前記半導体層２２の側面２２ｓの一部を覆う高さまで被覆してもよいし、図３（ｃ）に示すように、前記フィレット部分３１の全てと前記支持基板層２１の側面２１ｓの一部を覆う高さまで被覆するようにしても良い。
Note that the present invention is not limited to the above embodiments.
The covering height of the covering material 4 may be such that the fillet portion of the conductive bonding material 3 is completely covered and the surface of the semiconductor layer 22 of the LED element 2 is exposed to the outside.
For example, as shown in FIG. 3(a), the coating may be applied to a height that completely covers the side surface 2s of the LED element 2, or as shown in FIG. 3(b), the side surface 21s of the support substrate layer 21 It may be coated to a height that covers all of the fillet portion 31 and a part of the side surface 22s of the semiconductor layer 22, or as shown in FIG. It may be covered to a height that covers part of the area.
図３（ａ）に示すように、前記ＬＥＤ素子２の側面２ｓを全部覆う高さまで前記被覆材４で覆う場合には、高湿環境下で異物がＬＥＤ素子２の側面２ｓに付着する、又は析出する等という問題を回避できるという効果もある。 As shown in FIG. 3(a), when covering the side surface 2s of the LED element 2 with the covering material 4 to a height that completely covers the side surface 2s of the LED element 2, foreign matter may adhere to the side surface 2s of the LED element 2 in a high humidity environment, or Another effect is that problems such as precipitation can be avoided.
前記反射層は、前記支持基板層の前記半導体層と接する表面を形成するように設けられているものに限らず、前記支持基板層の内部に設けられていても良い。
前記支持基板層は金属からなるものに限らず、金属を含むものであれば良く、例えば、サファイア等からなる透光性を有する層を含むものであっても良い。
前記支持基板層が、サファイア等からなる層を含むものである場合には、前記反射層は、前記支持基板層の前記半導体層と接する側の表面ではなく、前記支持基板層の前記サファイアからなる層よりも前記導電性接合材と接する面側に設けられている。
前記基板１やＬＥＤ素子２の形状は、上述のものに限定されず、各種の形状を採用することができる。
The reflective layer is not limited to being provided so as to form the surface of the supporting substrate layer that is in contact with the semiconductor layer, but may be provided inside the supporting substrate layer.
The supporting substrate layer is not limited to being made of metal, but may be anything that contains metal, for example, it may include a transparent layer made of sapphire or the like.
When the supporting substrate layer includes a layer made of sapphire or the like, the reflective layer is not on the surface of the supporting substrate layer that is in contact with the semiconductor layer, but rather on the surface of the supporting substrate layer that is made of sapphire. is also provided on the side of the surface in contact with the conductive bonding material.
The shapes of the substrate 1 and the LED elements 2 are not limited to those described above, and various shapes can be adopted.
前記ＬＥＤ素子２は、４３５ｎｍ以下の波長（紫～紫外領域）の光を（射出するものであれば良く、よりエネルギーが高い４０５ｎｍ以下、３８０ｎｍ以下等の波長の光を射出するＬＥＤ素子を使用する場合には、本願発明の効果をより顕著に発揮することができる。 The LED element 2 may be any device that emits light with a wavelength of 435 nm or less (violet to ultraviolet region), and an LED element that emits light with a higher energy wavelength of 405 nm or less, 380 nm or less, etc. is used. In this case, the effects of the present invention can be more clearly exhibited.
前記被覆材４は、ガスバリア性が高く、光取り出し効率が良く、ＬＥＤ素子２との密着性も高い樹脂であれば特に限られないが、具体的には、シリコーン樹脂、フッ素樹脂、エポキシ樹脂などを挙げることができる。
前記実施形態では、前記被覆材４は、前記基板１の表面の一部を覆うようにしていたが、これに限らず、前記基板１の表面の全部を覆うようにしても良い。
The coating material 4 is not particularly limited as long as it is a resin that has high gas barrier properties, good light extraction efficiency, and high adhesion to the LED element 2, but specifically, silicone resin, fluororesin, epoxy resin, etc. can be mentioned.
In the embodiment, the covering material 4 covers a part of the surface of the substrate 1, but is not limited to this, and may cover the entire surface of the substrate 1.
前記ＬＥＤ発光装置１００は、前記基板１の中央部に前記ＬＥＤ素子２を取り付けたものに限られず、例えば、前記ＬＥＤ素子２が前記基板１の端部に取り付けられているようなものであっても良い。
また、１つの基板上に１つの前記ＬＥＤ素子を取り付けたものに限られず、図４に示すように、１つの基板上に複数のＬＥＤ素子を取り付けたチップオンボード型のものとしても良い。
その他、本発明の趣旨に反しない限りにおいて、種々の変形や実施形態の組合せを行ってもかまわない。
The LED light emitting device 100 is not limited to one in which the LED element 2 is attached to the center of the substrate 1, but may be one in which the LED element 2 is attached to an end of the substrate 1, for example. Also good.
Further, the present invention is not limited to one in which one LED element is mounted on one substrate, but may be a chip-on-board type in which a plurality of LED elements are mounted on one substrate, as shown in FIG. 4.
In addition, various modifications and combinations of embodiments may be made as long as they do not go against the spirit of the present invention.
１００・・・ＬＥＤ発光装置
１ ・・・基板
２ ・・・ＬＥＤ素子
２１ ・・・支持基板層
２２ ・・・半導体層
３ ・・・導電性接合材
３１ ・・・フィレット部分
４ ・・・被覆材
100...LED light emitting device 1...Substrate
2 ...LED element
2 1...Support substrate layer
2 2...Semiconductor layer
3... Conductive bonding material
31...Fillet part
4...Covering material
Claims (5)
該基板に取り付けられた４３５ｎｍ以下の波長の光を射出するＬＥＤ素子と、
前記基板と前記ＬＥＤ素子との間に配置されてこれらを電気的に接続する導電性接合材とを備えたＬＥＤ発光装置であり、
前記ＬＥＤ発光装置が、さらに前記導電性接合材を被覆する被覆材を備え、
前記ＬＥＤ素子が、支持基板層と、該支持基板層の表面に取り付けられた半導体層とを備えたものであって、
前記支持基板層の前記半導体層が取り付けられた面とは反対側の面が前記基板に取り付けられており、
前記被覆材が、前記支持基板層の側面の一部又は全部を被覆するものであり、
前記ＬＥＤ素子の前記基板とは反対側の面と、前記半導体層の側面が露出しており、
前記被覆材が、光透過性のものであることを特徴とするＬＥＤ発光装置。 A substrate and
an LED element attached to the substrate that emits light with a wavelength of 435 nm or less;
An LED light emitting device comprising a conductive bonding material disposed between the substrate and the LED element to electrically connect them;
The LED light emitting device further includes a coating material that covers the conductive bonding material,
The LED element includes a support substrate layer and a semiconductor layer attached to the surface of the support substrate layer,
A surface of the supporting substrate layer opposite to the surface to which the semiconductor layer is attached is attached to the substrate,
The coating material covers part or all of the side surface of the support substrate layer,
a surface of the LED element opposite to the substrate and a side surface of the semiconductor layer are exposed;
An LED light-emitting device characterized in that the covering material is light-transmissive .
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