JP2013016564A - Light emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light emitting device capable of extracting light generated from plural light emitting elements from one light emitting element.SOLUTION: A light emitting device comprises a substrate, an end face light emission type element provided on the substrate, and a light emitting diode element provided on the substrate so that it crosses a shaft almost vertical to a light emission end face while a starting point is in the light emission end face of the end face light emission type element. The end face light emission type element is provided on a side of the light emitting diode element.

Description

  The present invention relates to a light emitting device including a plurality of light emitting elements.

  Conventionally, an invention has been proposed in which three light emitting elements of red, green, and blue are incorporated, and at least the red light emitting element of the three light emitting elements is a semiconductor laser element (see Patent Document 1).

JP 2005-64163 A

  However, the conventional invention has a problem that light generated from a plurality of light emitting elements is extracted from the plurality of light emitting elements.

  Accordingly, an object of the present invention is to provide a light-emitting device that can extract light generated from a plurality of light-emitting elements from one light-emitting element.

  According to the present invention, the above problem is solved by the following means.

  The present invention provides a substrate, an end surface light emitting element provided on the substrate, and the substrate on the base so as to intersect an axis substantially perpendicular to the light emitting end surface starting from the light emitting end surface of the end surface emitting element. A light-emitting diode element provided on a side of the light-emitting diode element, wherein the edge-emitting element is provided on a side of the light-emitting diode element.

  Further, the present invention is the above light emitting device, wherein the emission wavelength of the edge-emitting element is longer than the emission peak wavelength of the light emitting diode element.

  Further, according to the present invention, the light emitting diode element has a rectangular shape in which the planar shape has a long side and a short side, and a side surface on the short side of the rectangular shape is a light emitting end surface of the end surface light emitting element. It is said light-emitting device characterized by being arrange | positioned so that it may oppose.

  Further, according to the present invention, the light-emitting diode element has a polygonal planar shape, and an angle of the polygonal shape starts from the inside of the light emission end face of the end face light emitting element and is substantially perpendicular to the light emission end face. It is arrange | positioned so that it may cross | intersect with the said light-emitting device characterized by the above-mentioned.

  In addition, the present invention is the light-emitting device described above, characterized in that a plurality of the edge-emitting elements are provided.

  Further, the present invention is the above light emitting device, wherein the plurality of end surface light emitting elements emit light to the light emitting diode element from different directions.

  The light-emitting diode element includes a substrate and a semiconductor layer constituting an element structure, and the light-emitting diode element is any one of an upper surface of the light-emitting diode element, a surface of the substrate on the semiconductor layer side, and the inside of the substrate. In addition, the light-emitting device includes an optical structure.

  Further, the present invention is characterized in that the light emitting diode element and the end surface light emitting element are sealed with a sealing material including an insulating light reflecting material while exposing an upper surface of the light emitting diode element. It is said light-emitting device.

  Further, the present invention is the above light emitting device, wherein a light shielding member is provided on the upper surface of the light emitting diode element along the periphery of the upper surface.

  Further, the present invention is the above light emitting device, wherein a wavelength conversion member including a phosphor excited by light of the light emitting diode element is provided on an upper surface of the light emitting diode element.

  ADVANTAGE OF THE INVENTION According to this invention, the light-emitting device which can take out the light produced from the several light emitting element from one light emitting element can be provided.

1 is a schematic conceptual diagram of a light emitting device according to an embodiment of the present invention. It is a top view explaining the example of arrangement of the light emitting diode element (the 2). It is a figure explaining an example of an optical structure. It is a figure which shows a mode that the light-shielding member was provided in the light-emitting device which concerns on embodiment of this invention. It is a figure which shows an example of a mode that several end surface light emitting type elements were arrange | positioned so that light might be radiate | emitted to a light emitting diode element from a different direction. It is a figure which shows the assembly method of the light-emitting device which concerns on Example 1 of this invention. It is a figure which shows the light-emitting device based on Example 2 of this invention. It is a figure which shows the light-emitting device based on Example 3 of this invention.

  EMBODIMENT OF THE INVENTION Below, the form for implementing this invention is demonstrated, referring attached drawing. Note that illustration of members that are not the subject of explanation may be omitted as appropriate.

  FIG. 1 is a schematic conceptual diagram of a light-emitting device according to an embodiment of the present invention, (a) is a plan view, and (b) is a cross-sectional view (the light-emitting device is cut by a broken line in FIG. 1 (a)). In the case).

  As shown in FIG. 1, the light emitting device according to the embodiment of the present invention includes a base body 11, and a light emitting diode element 12 and an end surface light emitting element 13 provided on the base body 11. The light emitting diode element 12 is provided so as to cross an axis substantially perpendicular to the light emitting end face of the end face light emitting element 13. This axis is within the light emitting end face of the edge emitting element 13, more preferably within the light emitting region within the light emitting end face of the edge emitting element 13 (area corresponding to the end face of the optical waveguide of the edge emitting element 13). The starting point. Hereinafter, this axis is also referred to as an optical axis of the edge-emitting element 13.

  In the light emitting device according to the embodiment of the present invention, the end surface light emitting element 13 is provided on the side of the light emitting diode element 12 on the substrate 11, and the light of the end surface light emitting element 13 enters the side surface of the light emitting diode element 12 to emit light. It is taken out from the diode element 12.

  Therefore, according to the light emitting device according to the embodiment of the present invention, light generated from a plurality of light emitting elements (light emitting diode element 12 and end surface light emitting element 13) can be extracted from one light emitting element (light emitting diode element 12). it can. For this reason, light generated from a plurality of light-emitting elements can be extracted from a minute region corresponding to one light-emitting element.

  In the case of taking out light generated from a plurality of light emitting elements from each of the plurality of light emitting elements, color unevenness occurs when the optical system (lens) is passed through, thereby reducing the optical performance of a system such as a lighting device or a liquid crystal backlight. Cause. However, according to the light emitting device according to the embodiment of the present invention, such color unevenness can be effectively suppressed. Further, in the case of using a plurality of light emitting elements emitting substantially the same color, uneven luminance can be effectively suppressed.

  In the light emitting device according to the embodiment of the present invention, the upper surface of the light emitting diode element 12 is a main light extraction surface from which light from the light emitting diode element 12 and the end surface light emitting element 13 is extracted. In this way, the region from which light is extracted can be more limited than when light from a plurality of light emitting elements is extracted from the entire light emitting diode element 12.

  Details will be described below.

[Substrate]
As the base 11, for example, a mounting substrate provided with wiring can be used. Alternatively, the package may include a lead frame and a molded body that integrally holds the lead frame. A light emitting diode element 12 and an end surface light emitting element 13 are provided on the base 11. The light-emitting diode element 12 and the edge-emitting element 13 can be directly provided on the base 11 by being placed on the top surface of the base 11, a submount placed on the top surface of the base 11, or the like. It can also be indirectly provided on the substrate 11 by placing it on the substrate 11.

[Light emitting diode element]
(Example of light-emitting diode element)
As the light emitting diode element 12, for example, an element including a substrate and a semiconductor layer constituting an element structure can be used. The thickness of the semiconductor layer is usually about several μm. If the substrate is provided in addition to the semiconductor layer, the thickness of the entire light emitting diode element 12 is increased, so that the light emitted from the edge emitting element 13 is incident on the light emitting diode element 12. Incidence becomes easy.

<Semiconductor layer>
As the semiconductor layer, for example, a nitride semiconductor layer can be used. The nitride semiconductor can change the band gap energy in a range corresponding to the ultraviolet region to the visible / infrared region depending on its composition. In particular, a nitride semiconductor can constitute a semiconductor layer capable of efficiently emitting short-wavelength light such as ultraviolet light and blue light. Such a nitride semiconductor layer capable of efficiently emitting short-wavelength light is unlikely to absorb longer-wavelength light such as green and red light. For this reason, by using a nitride semiconductor layer for the semiconductor layer of the light emitting diode element 12, it is easy to suppress loss due to light absorption of the edge-emitting element 13 and to easily extract light from the edge-emitting element 13 efficiently. it can.

<Board>
As the substrate, a translucent substrate is preferably used. Moreover, the thickness of a board | substrate shall be 50 micrometers-200 micrometers, for example. Note that the substrate may be a growth substrate used for growing the semiconductor layer, or may be a substrate attached to the semiconductor layer. When the substrate is attached to the semiconductor layer, for example, the growth substrate is peeled off from the semiconductor layer by lift-off or the like. After that, if a substrate is attached to the semiconductor layer directly through a light-transmitting adhesive or by thermocompression bonding or surface activation bonding, light can be easily extracted efficiently. As the growth substrate, for example, a sapphire substrate or a GaN substrate can be used. In addition to these, a glass substrate or the like can be used as the substrate attached to the semiconductor layer, and the substrate may contain a phosphor.

(Arrangement of light emitting diode elements)
The light emitting diode element 12 can be arranged in various ways. For example, if the light emitting diode element 12 is arranged as in the following arrangement example (part 1) or arrangement example (part 2), the light incident from the edge-emitting element 13 is changed. It can be easily taken out from the entire top surface of the light emitting diode element 12.

<Arrangement example (1)>
An arrangement example (part 1) is the arrangement shown in FIG. In the arrangement example (No. 1), the planar shape of the light emitting diode element 12 is a rectangular shape having a long side and a short side, and the side surface on the short side of the rectangular shape is opposed to the light emitting end face of the edge-emitting element 13. Thus, the light emitting diode element 12 is arranged.

  In this case, since the light emitting diode element 12 is long in the direction parallel to the optical axis of the end surface light emitting element 13, the light of the end surface light emitting element 13 is easily guided to a wide range in the light emitting diode element. The uniformity of the light intensity of the edge-emitting element 13 on the upper surface of the element 12 can be improved.

<Arrangement example (2)>
FIG. 2 is a plan view for explaining an arrangement example (No. 2) of the light emitting diode elements. As shown in FIG. 2, in the arrangement example (No. 2), the planar shape of the light emitting diode element 12 is a polygonal shape such as a rectangular shape, and the corners of this polygonal shape intersect with the optical axis of the edge-emitting element 13. A light emitting diode element 12 is arranged.

  In this way, the angle component of the light traveling in the light emitting diode element is larger than that in the case where the light from the edge emitting element 13 is incident on the two side surfaces of the light emitting diode element 12 and incident on one side surface. Therefore, the uniformity of the light intensity of the end surface light emitting element 13 on the upper surface of the light emitting diode element 12 can be improved.

(Light-emitting diode element shape)
Note that at least one of the side surfaces of the light emitting diode element 12 may be inclined with respect to the upper surface thereof. Thereby, the light of the edge-emitting element 13 can be prevented from being vertically reflected by the side surface of the light emitting diode element 12, and can be easily extracted from the upper surface of the light emitting diode element 12. In particular, the angle formed between the side surface and the upper surface of the light emitting diode element 12 (the angle including the light emitting diode element 12) is preferably an acute angle. In this way, the light is efficiently reflected toward the upper surface of the light emitting diode element 12, so that the light utilization efficiency of the light emitting diode element 12 and the end surface light emitting element 13 can be improved. The inclined side surface of the light emitting diode element 12 is preferably the side surface opposite to the side facing the end surface light emitting element 13, and more preferably all side surfaces.

(Light-emitting diode element mounting)
For example, the light-emitting diode element 12 can be flip-chip mounted on the base 11 using a gold bump or the like by providing a positive electrode and a negative electrode on the same surface side. This eliminates the need for an electrode or wire on the upper surface side of the light emitting diode element 12, thereby improving the light utilization efficiency of the light emitting diode element 12 and the end surface light emitting element 13.

  In this case, as the electrode of the light emitting diode element 12, for example, a highly reflective conductive material such as silver or aluminum can be used. In this way, light is efficiently reflected by the electrodes and travels toward the upper surface of the light emitting diode element 12, so that the light utilization efficiency of the light emitting diode element 12 and the end surface light emitting element 13 can be improved.

  Further, an insulating light reflecting material can be filled under the electrode of the light emitting diode element 12 (for example, between the electrode and the mounting substrate). In this way, light is efficiently reflected by the insulating light reflecting material and travels toward the upper surface of the light emitting diode element 12, so that the light utilization efficiency of the light emitting diode element 12 and the edge emitting element 13 can be improved. In this case, the electrode of the light emitting diode element 12 may be a translucent electrode using a translucent conductive material such as ITO.

  The insulating light reflecting material may be provided in a dot pattern. In this way, the light is reflected according to the pattern by the insulating light reflecting material, so that the uniformity of the light intensity on the upper surface of the light emitting diode element 12 can be improved.

  In the case where the light emitting diode element 12 includes a substrate and a semiconductor layer, for example, a positive electrode and a negative electrode are provided on the same surface side, or a positive electrode and a negative electrode are provided on opposite surfaces, respectively. It can also be mounted so that is on the upper surface side. In this case, the electrode on the upper surface side of the light emitting diode element 12 is preferably a translucent electrode using a translucent conductive material such as ITO. The electrode on the upper surface side is connected to the wiring of the base 11 and the lead frame by a wire.

(Insulating light reflecting material on the side of the light emitting diode element)
An insulating light reflecting material can be provided in at least a partial region on the side surface of the light emitting diode element 12. In particular, the side surface of the light emitting diode element 12 is preferably the side surface opposite to the side facing the end surface light emitting element 13, and insulating light is applied to all side surfaces other than the side surface facing the end surface light emitting element 13. More preferably, a reflective material is provided.

  In this case, the light of the edge-emitting element 13 that has entered the light-emitting diode element 12 is easily reflected from the insulating light reflecting material and extracted from the upper surface of the light-emitting diode element 12. Utilization efficiency can be improved. Further, since the light reflected by the insulating light reflecting material is scattered, the uniformity of the light intensity on the upper surface of the light emitting diode element 12 can be improved.

  The insulating light reflecting material is fixed to at least a partial region on the side surface of the light emitting diode element 12 by being mixed and adhered to the light transmitting member or by electrophoretic electrodeposition.

(Wavelength selective material on the side of the light emitting diode element)
A wavelength-selective material (for example, a dielectric multilayer film) that transmits light from the edge-emitting element 13 and reflects other light can be provided in at least a partial region on the side surface of the light-emitting diode element 12. In particular, it is preferable to provide a wavelength selective material on the side surface of the light emitting diode element 12 facing the end surface light emitting element 13.

  In this way, the light from the edge-emitting element 13 can be easily extracted from the upper surface of the light emitting diode element 12 through the wavelength selective material, and the light from the light emitting diode element 12 is reflected by the wavelength selective material. Since it becomes easy to take out from the upper surface of the light emitting diode element 12, the light utilization efficiency of the light emitting diode element 12 and the end surface light emitting element 13 can be improved.

(Optical structure)
<Top surface of light emitting diode element>
An optical structure can be formed on the upper surface of the light emitting diode element 12. In this way, the light of the light emitting diode element 12 and the end surface light emitting element 13 changes its traveling direction on the upper surface of the light emitting diode element 12 and is easily extracted from the upper surface of the light emitting diode element 12. The uniformity of the light intensity can be improved.

  When the light emitting diode element 12 including the substrate and the semiconductor layer is used and the substrate is on the upper surface side, a method of directly processing the substrate by etching, laser processing, or blasting, or a light transmitting member is printed on the substrate. The optical structure can be formed by a method or the like.

  Further, when the light emitting diode element 12 including the substrate and the semiconductor layer is used and the semiconductor layer is on the upper surface side, a method of directly processing the semiconductor layer and the electrode of the light emitting diode element 12 by etching or the like, or a translucent member The above-mentioned optical structure can be formed by a method of printing on a semiconductor layer or an electrode.

<Semiconductor layer side surface of light emitting diode element substrate>
When the light emitting diode element 12 includes a substrate and a semiconductor layer, an optical structure can also be formed on the surface of the substrate of the light emitting diode element 12 on the semiconductor layer side. In this way, the light of the light emitting diode element 12 and the end surface light emitting element 13 changes its traveling direction on the surface of the substrate on the semiconductor layer side, and is easily extracted from the upper surface of the light emitting diode element 12. The uniformity of light intensity on the upper surface can be improved.

<Inside of light emitting diode element substrate>
When the light emitting diode element 12 includes a substrate and a semiconductor layer, an optical structure can also be formed inside the substrate of the light emitting diode element 12. This makes it possible to change the traveling direction of light inside the substrate and to be easily extracted from the upper surface of the light emitting diode element 12 and to improve the uniformity of light intensity on the upper surface of the light emitting diode element 12. The optical structure in this case can be formed using a femtosecond laser or the like.

<Example of optical structure>
FIG. 3 is a diagram illustrating an example of an optical structure. As the optical structure, for example, convex and / or concave can be preferably used. Convex and concave portions can be formed regularly or irregularly. As the convexes and concaves formed regularly, for example, those composed of a single convex or concave such as a lens shown in FIG. 3A and a prism shown in FIG. An example in which a plurality of protrusions and recesses are configured by a pattern can be given. Each of the plurality of projections and depressions may be the lens or prism described above, or a polyhedron having a trapezoidal cross-sectional view (preferably the side surface is inclined or curved) as shown in FIG. But you can. Examples of irregularly formed protrusions and depressions include, for example, unevenness on the roughened surface (FIG. 3D) and the like.

  In the embodiment of the present invention, various patterns can be adopted as a pattern constituting a plurality of projections and depressions. The light intensity on the upper surface of the light emitting diode element 12 depends on what pattern is adopted. Can be controlled. For example, in the embodiment of the present invention, a pattern in which the number of concaves and convexes decreases as the distance from the edge-emitting element 13 decreases, while an increasing pattern can be used. According to the configuration, it is possible to further improve the uniformity of the light intensity on the upper surface of the light emitting diode element 12 as compared with the former configuration.

[Edge-emitting device]
(Edge-emitting elements and directivity)
The edge-emitting element 13 is a light-emitting element that emits directional light from the end face, and has an optical waveguide that extends in a direction substantially perpendicular to the light-emitting end face in a semiconductor layer constituting the element structure. As the specific edge emitting element 13, for example, a light emitting element such as a semiconductor laser element or a super luminescence diode can be used. If these are used, the light from the edge-emitting element 13 can be efficiently incident on the side surface of the light-emitting diode element 12.

(Wavelength of light emitted from the edge-emitting element)
The emission wavelength of the edge-emitting element 13 is preferably longer than the emission peak wavelength of the light-emitting diode element 12. In general, the light emitting diode element extremely easily absorbs light in a wavelength region shorter than the emission peak wavelength. Therefore, in this case, the light from the edge-emitting element 13 is not easily absorbed by the light-emitting diode element 12, so that the light from the edge-emitting element 13 can be easily extracted from the light-emitting diode element 12. Use efficiency improves.

[Between light-emitting diode element and edge-emitting element]
(Translucent member)
The light emitting diode element 12 and the end surface light emitting element 13 can be connected by a translucent member. In this way, since the translucent member acts as an optical waveguide, the light utilization efficiency of the edge-emitting element 13 can be improved.

  The translucent member is provided between the light emitting diode element 12 and the end surface light emitting element 13 by, for example, a dispenser.

  The light transmissive member can include an insulating light scattering material. In this way, the light from the edge-emitting element 13 can be scattered by the insulating light scattering material and incident on the light-emitting diode element 12, thereby improving the uniformity of light intensity on the upper surface of the light-emitting diode element 12. be able to.

(Light reflecting material)
A light reflecting material can be provided on the upper surface of the base 11 between the light emitting diode element 12 and the edge emitting element 13. In this way, the light emitted downward from the edge-emitting element 13 is reflected by the light reflecting material and enters the light-emitting diode element 12, so that the light utilization efficiency of the edge-emitting element 13 can be improved. .

(Optical parts)
An optical component can be provided between the light emitting diode element 12 and the end surface light emitting element 13. In this way, since the direction of the light emitted from the edge-emitting element 13 can be adjusted, the light utilization efficiency of the edge-emitting element 13 can be improved. For example, a rod lens or an optical waveguide can be used as the optical component.

  Moreover, it is preferable to provide a light reflecting material on the upper surface of the optical component. In this way, light leakage upward of the optical component is suppressed, so that light can be efficiently incident on the side surface of the light emitting diode element 12.

[Closing out]
(Encapsulant)
The light emitting diode element 12 and the end surface light emitting element 13 are preferably sealed with a sealing material including an insulating light reflecting material while the upper surface of the light emitting diode element 12 is exposed. In this way, it is possible to clearly specify the upper surface of the light emitting diode element 12 as the light emitting region by giving up the sealing material. Further, the light of the light emitting diode element 12 and the end surface light emitting element 13 can be reflected by the sealing material and efficiently guided to the upper surface of the light emitting diode element 12.

  In addition, when the light emitting diode element 12 and the end surface light emitting element 13 are connected by a translucent member, an insulating light reflecting material that may be included in the sealing material is interposed between the light emitting diode element 12 and the end surface light emitting element 13. Since penetration can be suppressed, the assembly of the light emitting device is facilitated. Further, the above-described optical component provided between the light emitting diode element 12 and the end surface light emitting element 13 is disposed in contact with the light emitting diode element 12 or at a distance of less than 10 μm from the light emitting diode element 12, or the light emitting diode element 12 and the end surface An insulating light reflecting material that may be included in the sealing material even if the light emitting element 13 is in contact with or disposed at an interval of less than 10 μm penetrates between the light emitting diode element 12 and the end surface light emitting element 13. This makes it possible to prevent the light emitting device from being assembled.

(Light shielding member)
4A and 4B are views showing a state where a light-shielding member is provided in the light-emitting device according to the embodiment of the present invention. FIG. 4A is a plan view, and FIG. 4B is a cross-sectional view (the light-emitting device is shown in FIG. It is a cross section when cut by a broken line in the middle).

  As shown in FIG. 4, a light shielding member 14 may be provided on the upper surface of the light emitting diode element 12 along the periphery of the upper surface. In this way, it is possible to clearly specify the upper surface of the light emitting diode element 12 as the light emitting region with the light shielding member 14 being parted. The light shielding member 14 can be provided by sputtering silver or aluminum in a frame shape, or mounting a frame member made of an insulating light reflecting material. Further, the light shielding member 14 can also prevent the sealing material from flowing on the upper surface of the light emitting diode element 12 when the light emitting diode element 12 and the end surface light emitting element 13 are sealed with the sealing material.

[Multiple edge-emitting devices]
A plurality of edge-emitting elements 13 can be provided. In this way, it is possible to easily increase the number of wavelengths by using elements that emit light of different wavelengths as the respective edge-emitting elements 13. In addition, since it is possible to supply power separately to the plurality of edge-emitting elements 13, the heat source (edge-emitting element 13) can be dispersed.

  A white light source can be easily obtained by providing two end surface light emitting elements 13 whose emission wavelengths are green and red and one light emitting diode element 12 whose emission wavelength is blue.

  FIG. 5 is a plan view showing an example of a state in which a plurality of end surface light emitting elements are arranged to emit light to the light emitting diode elements from different directions.

  As shown in FIG. 5, the plurality of end surface light emitting elements 13 can be arranged to emit light to the light emitting diode elements 12 from different directions. In this way, the heat source can be more dispersed and multi-wavelength can be easily achieved. In particular, it is preferable that the plurality of end surface light emitting elements 13 are arranged so that the optical axes of the end surface light emitting elements 13 intersect in the light emitting diode element 12 in a top view. Thereby, it is easy to improve the uniformity of the light intensity on the upper surface of the light emitting diode element 12.

  At this time, one end surface light emitting element 13 may be arranged corresponding to one side surface of the light emitting diode element 12. In this way, it is easy to disperse the heat source, and when the emission wavelengths of the end surface light emitting elements 13 are different, it is easy to provide a wavelength selective material and to improve the light utilization efficiency.

  On the other hand, a plurality of end surface light emitting elements 13 may be arranged corresponding to one side surface of the light emitting diode element 12. In this way, the light from the plurality of end surface light emitting elements 13 can be collectively guided to the light emitting diode element 12, and the light emitting device can be downsized.

[Wavelength conversion member containing phosphor]
A wavelength conversion member including a phosphor can be provided on the upper surface of the light emitting diode element 12. In this way, the wavelength of light from the light-emitting diode element 12 and the edge-emitting element 13 can be converted, so that it is easy to increase the number of wavelengths.

  The phosphor is fixed to the upper surface of the light-emitting diode element 12 by, for example, blending with a translucent member and bonding or electrophoretic electrodeposition. The phosphor may be any material that is excited by the light from the light emitting diode element 12.

  Further, if one light emitting diode element 12 whose emission wavelength is blue, one end light emitting element 13 whose emission wavelength is red, and a phosphor whose emission wavelength is yellow, a light emitting diode element 12 is provided. In addition, redness can be added to the white light obtained from the phosphor, and light emission with higher color rendering can be achieved.

[Various materials]
Although the light emitting device according to the embodiment of the present invention has been described above, the insulating light reflecting material, the light reflecting material, the light transmitting member, the insulating light scattering material, and the phosphor described above include, for example, the following: Things can be used.

(Insulating light reflector)
As the insulating light reflecting material, for example, inorganic powder of silicon dioxide, titanium dioxide, aluminum oxide, calcium carbonate, barium sulfate, or a mixture thereof can be used.

(Light reflecting material)
As the light reflecting material, in addition to the insulating light reflecting material described above, for example, a metallic reflecting material such as aluminum or silver can be used.

(Translucent member)
As the translucent member, for example, an alicyclic epoxy resin, a silicone resin, a fluororesin, a glass precursor, or a mixture thereof can be used.

(Insulating light scattering material)
Examples of the insulating light scattering material include silicon or acrylic resin fine particles, hollow glass beads, or inorganic powders of silicon dioxide, titanium dioxide, zirconium dioxide, aluminum oxide, zinc oxide, lead carbonate, barium sulfate, and zinc sulfide. Or mixtures thereof.

(Phosphor)
As the phosphor, for example, YAG, TAG, and silicate phosphors can be used.

  FIG. 6 is a diagram illustrating an assembling method of the light emitting device according to the first embodiment of the invention. Note that some drawings include a cross-sectional view (a cross section when the light-emitting device is cut along a broken line in the plan view) in addition to the plan view.

  First, as shown in FIG. 6A, the semiconductor laser element 103 is mounted on the mounting substrate 102 with the wiring 101 by gold tin solder, and the upper surface electrode of the semiconductor laser element 103 and the wiring 101 are connected by the wire 104. To do.

  Next, as shown in FIG. 6B, the light-emitting diode element 105 is flip-chip mounted on the mounting substrate 102 by conductive adhesive, solder paste, or ultrasonic bonding. At this time, bumps (not shown) exist between both electrodes of the light emitting diode element 105 and the wiring 101. The light emitting diode element 105 has a rectangular shape having a long side and a short side in a planar shape, and is arranged so that the side surface on the short side of the rectangular shape faces the light emitting end face of the semiconductor laser element 103. .

  Next, as shown in FIG. 6C, a translucent member 106 is applied between the semiconductor laser element 103 and the light emitting diode element 105. Note that a silicone resin is used for the translucent member 106.

  Next, as shown in FIG. 6 (d), a dam material 107 is provided by applying resin in a frame shape or mounting a frame-like member on the mounting substrate 102 to form a cavity 108.

  Next, as shown in FIG. 6E, the cavity 108 is filled with a sealing material 109 containing an insulating light reflecting material. Silicone resin is used as the sealing material 109, and titanium dioxide is used as the insulating light reflecting material. The sealing material 109 covers at least the middle of the side surface of the light emitting diode element 105, and preferably covers substantially all of the side surface. In this way, the upper surface of the light emitting diode element 105 can be clearly specified as the light emitting region. Note that the surface of the sealing material 109 is preferably substantially flat or depressed, or inclined toward the mounting substrate 102 side. In this way, the upper surface of the light emitting diode element 105 protrudes from the surface of the encapsulant 109 or is substantially flush with the surface of the encapsulant 109, so that the emitted light can be blocked by the encapsulant 109. Can be suppressed. In addition, the wire 104 of the semiconductor laser element 103 is preferably embedded in the sealing material 109.

The light-emitting device according to Example 1 of the present invention thus assembled can be configured, for example, as shown in 1-3 shown in the following table. In Table 1, LD is the semiconductor laser element 103, and LED is the light emitting diode element 105. Note that the LD and the LED can emit light simultaneously or independently. Moreover, in the structure (3) in Table 1, it is preferable that the light emission wavelength of LD is longer than the light emission peak wavelength of LED in a blue region.

  In the light emitting device according to the first embodiment of the present invention, as shown in FIG. 6 (f), the semiconductor laser element 103 can be placed in contact with the light emitting diode element 105 or at a distance of less than 10 μm. . In this way, the light of the semiconductor laser element 103 can be used more efficiently, and even if the sealing material 109 is filled without applying the translucent member 106, the semiconductor laser element 103 It is easy to couple light to the light emitting diode element 105.

  Further, in the light emitting device according to Example 1 of the present invention, after the semiconductor laser element 103 and the light emitting diode element 105 are mounted on the mounting substrate 102 (see FIG. 6B), as shown in FIG. The cap 111 with the window glass 110 can be put on and used.

  7A and 7B are diagrams showing a light-emitting device according to Example 2 of the present invention, where FIG. 7A is a plan view, and FIG. 7B is a cross-sectional view (the light-emitting device is cut by a broken line in FIG. 7A). In the case).

  The light emitting device according to the second embodiment of the present invention is different from the light emitting device according to the first embodiment of the present invention in that the wavelength conversion member 112 is provided on the upper surface of the light emitting diode element 105. The wavelength conversion member 112 is obtained by printing a silicone resin containing a phosphor.

The light-emitting device according to Example 2 of the present invention thus assembled can be configured as shown in 1 and 2 shown in the following table, for example. In Table 2, LD is the semiconductor laser element 103, and LED is the light emitting diode element 105. In the configuration (1) in Table 2, the LD and the LED can emit light simultaneously or independently. By simultaneously emitting light and changing only the light intensity of the LD whose emission wavelength is red, the color rendering property can be changed. Further, in the configuration (2) in Table 2, the emission wavelength of the LD is preferably longer than the emission peak wavelength of the LED in the blue region.

  As the wavelength conversion member 112, in addition to printing a silicone resin blended with a phosphor, a solid body (silicone resin or glass material) blended with a phosphor can be mounted.

  In the above description, the upper and side surfaces of the wavelength conversion member 112 are exposed. However, after the wavelength conversion member 112 is placed on the light emitting diode element 105, the wavelength conversion member 112 is sealed with a sealing material including an insulating light reflecting material. By doing so, the side surface of the wavelength conversion member 112 may also be covered with the sealing material. At this time, the upper surface of the wavelength conversion member 112 is exposed from the sealing material.

  8A and 8B are diagrams showing a light-emitting device according to Example 3 of the present invention, where FIG. 8A is a plan view, and FIG. 8B is a cross-sectional view (the light-emitting device is cut by a broken line in FIG. 8A). In the case). In the plan view of FIG. 8A, the semiconductor laser element 103 and the translucent member 106 are drawn transparently by broken lines.

  The light emitting device according to the third embodiment of the present invention is different from the light emitting device according to the first embodiment of the present invention in that it includes three semiconductor laser elements 103.

The light-emitting device according to Example 3 of the present invention thus assembled can be configured, for example, as shown in 1 and 2 shown in the following table. In Table 3, LD is the semiconductor laser element 103, and LED is the light emitting diode element 105. Each LD and LED can emit light simultaneously or independently. In the configuration (2) in Table 3, the emission wavelength of each LD is preferably longer than the emission peak wavelength of the LED in the blue region.

  The light emitting devices according to the first to third embodiments of the present invention described above can be used for various applications by appropriately selecting the wavelengths of light emitted from a plurality of elements. For example, when emitting red, green and blue light from multiple elements, lighting device, liquid crystal backlight, portable strobe, CIS scanner, amusement (light decoration such as pachinko), self-luminous display, projection display (Pico projector, projector, etc.), retinal scanning display, etc.

  As mentioned above, although embodiment and the Example of this invention were described, these description is related to an example of this invention, and this invention is not limited at all by these description.

DESCRIPTION OF SYMBOLS 11 Base body 12 Light emitting diode element 13 End surface light emitting element 14 Light shielding member 101 Wiring 102 Mounting substrate 103 Semiconductor laser element 104 Wire 105 Light emitting diode element 106 Translucent member 107 Dam material 108 Cavity 109 Sealing material 110 Window glass 111 Cap 112 Wavelength conversion member

Claims (10)

A substrate;
An edge-emitting element provided on the substrate;
A light emitting diode element provided on the base so as to cross an axis substantially perpendicular to the light emitting end face starting from the inside of the light emitting end face of the end face light emitting element;
With
The edge-emitting element is provided on a side of the light-emitting diode element;
A light emitting device characterized by that.   The light emitting device according to claim 1, wherein an emission wavelength of the edge-emitting element is longer than an emission peak wavelength of the light emitting diode element.   The light emitting diode element has a rectangular shape having a long side and a short side in a planar shape, and the side surface on the short side of the rectangular shape is arranged to face the light emitting end face of the end surface light emitting element. The light emitting device according to claim 1, wherein the light emitting device is a light emitting device.   The light emitting diode element is arranged so that the planar shape thereof is a polygonal shape, and the corner of the polygonal shape intersects with an axis substantially perpendicular to the light emitting end face starting from the inside of the light emitting end face of the end face light emitting element. The light emitting device according to claim 1, wherein the light emitting device is a light emitting device.   The light-emitting device according to claim 1, comprising a plurality of the edge-emitting elements.   The light emitting device according to claim 5, wherein the plurality of end surface light emitting elements emit light to the light emitting diode elements from different directions. The light emitting diode element includes a substrate and a semiconductor layer constituting an element structure,
7. The optical structure according to claim 1, further comprising an optical structure on any one of an upper surface of the light emitting diode element, a surface of the substrate on the side of the semiconductor layer, and the inside of the substrate. Light emitting device.   The said light emitting diode element and the said edge-emitting element are sealed with the sealing material containing an insulating light reflection material, exposing the upper surface of the said light emitting diode element. Item 8. The light emitting device according to any one of Item 7.   9. The light emitting device according to claim 1, wherein a light shielding member is provided on an upper surface of the light emitting diode element along a periphery of the upper surface.   The wavelength conversion member containing the fluorescent substance excited by the light of this light emitting diode element is provided in the upper surface of the said light emitting diode element, The any one of Claims 1-9 characterized by the above-mentioned. Light emitting device.

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