JP7391069B2 - マルチトンネル接合を有するｖｃｓｅｌレーザ及びその製造方法 - Google Patents

マルチトンネル接合を有するｖｃｓｅｌレーザ及びその製造方法 Download PDF

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Publication number
JP7391069B2
JP7391069B2 JP2021181614A JP2021181614A JP7391069B2 JP 7391069 B2 JP7391069 B2 JP 7391069B2 JP 2021181614 A JP2021181614 A JP 2021181614A JP 2021181614 A JP2021181614 A JP 2021181614A JP 7391069 B2 JP7391069 B2 JP 7391069B2
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Prior art keywords
vcsel laser
layers
reflector
vcsel
regulation
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Japanese (ja)
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JP2022098436A (ja
Inventor
立 王
念宜 李
銘浩 郭
珊珊 林
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Zhejiang Rayseasc Technology Co Ltd
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Zhejiang Rayseasc Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
    • H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2021181614A 2020-11-18 2021-11-08 マルチトンネル接合を有するｖｃｓｅｌレーザ及びその製造方法 Active JP7391069B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN202011292202 2020-11-18
CN202011519982.7 2020-12-21
CN202011519982.7A CN114520461B (zh) 2020-11-18 2020-12-21 具有多隧道结的vcsel激光器及其制备方法

Publications (2)

Publication Number Publication Date
JP2022098436A JP2022098436A (ja) 2022-07-01
JP7391069B2 true JP7391069B2 (ja) 2023-12-04

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Country Link
JP (1) JP7391069B2 (ko)
KR (1) KR102556555B1 (ko)
CN (1) CN114520461B (ko)
TW (1) TWI770913B (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115986562B (zh) * 2023-03-20 2023-07-25 苏州长光华芯半导体激光创新研究院有限公司 高功率低发散角垂直腔面发射半导体发光器件及制备方法
CN117424070B (zh) * 2023-12-18 2024-03-01 苏州长光华芯光电技术股份有限公司 一种多结垂直腔面发光结构及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004253408A (ja) 2002-02-22 2004-09-09 Ricoh Co Ltd 面発光レーザ素子、該面発光レーザ素子を用いた面発光レーザアレイ、電子写真システム、面発光レーザモジュール、光通信システム、光インターコネクションシステム、および面発光レーザ素子の製造方法
JP2013175712A (ja) 2012-01-24 2013-09-05 Fuji Xerox Co Ltd 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置
US20170256915A1 (en) 2016-03-04 2017-09-07 Princeton Optronics, Inc. High-Speed VCSEL Device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100584542B1 (ko) * 2000-02-24 2006-05-30 삼성전자주식회사 표면광 레이저
WO2001093387A2 (en) * 2000-05-31 2001-12-06 Sandia Corporation Long wavelength vertical cavity surface emitting laser
JP2005044964A (ja) * 2003-07-28 2005-02-17 Ricoh Co Ltd 面発光レーザ素子および面発光レーザアレイおよび面発光レーザモジュールおよび電子写真システムおよび光インターコネクションシステムおよび光通信システムおよび面発光レーザ素子の製造方法
CN1588717A (zh) * 2004-07-16 2005-03-02 北京工业大学 高效大功率多波长隧道级联多有源区垂直腔面发射激光器
US9088134B2 (en) * 2011-07-27 2015-07-21 Vixar Inc. Method and apparatus including improved vertical-cavity surface-emitting lasers
CN104577711A (zh) * 2013-10-24 2015-04-29 中国科学院苏州纳米技术与纳米仿生研究所 垂直腔面发射激光器及其制作方法
CN113490998A (zh) * 2018-08-09 2021-10-08 阵列光子学公司 用于混合式半导体生长的氢扩散屏障
US11563307B2 (en) * 2018-10-01 2023-01-24 Mellanox Technologies, Ltd. High speed high bandwidth vertical-cavity surface-emitting laser
US20220069546A1 (en) * 2019-01-17 2022-03-03 Array Photonics, Inc. Control of vcsel spatial modes and output beam
CN111478179A (zh) * 2020-05-25 2020-07-31 长春中科长光时空光电技术有限公司 一种垂直腔面发射激光器及其制作方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004253408A (ja) 2002-02-22 2004-09-09 Ricoh Co Ltd 面発光レーザ素子、該面発光レーザ素子を用いた面発光レーザアレイ、電子写真システム、面発光レーザモジュール、光通信システム、光インターコネクションシステム、および面発光レーザ素子の製造方法
JP2013175712A (ja) 2012-01-24 2013-09-05 Fuji Xerox Co Ltd 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置
US20170256915A1 (en) 2016-03-04 2017-09-07 Princeton Optronics, Inc. High-Speed VCSEL Device

Also Published As

Publication number Publication date
KR20220089619A (ko) 2022-06-28
TWI770913B (zh) 2022-07-11
CN114520461B (zh) 2023-03-28
CN114520461A (zh) 2022-05-20
KR102556555B1 (ko) 2023-07-17
TW202221994A (zh) 2022-06-01
JP2022098436A (ja) 2022-07-01

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