JP7391069B2 - VCSEL laser with multi-tunnel junction and manufacturing method thereof - Google Patents

Description

TECHNICAL FIELD The present application relates to the field of semiconductors, and more particularly to a VCSEL laser with a multi-tunnel junction and a method of manufacturing the same.

A VCSEL (Vertical-Cavity Surface-Emitting Laser) is a semiconductor laser that forms a resonant cavity in the vertical direction of a substrate and emits laser light in the vertical direction. VCSEL lasers, particularly VCSEL dot matrix devices containing multiple VCSEL units, are widely used in industries such as consumer electronics, industrial, and medical, for example. Based on the number of tunnel junctions, VCSEL devices can be divided into single-junction VCSEL devices and multi-junction VCSEL devices, and as the name suggests, single-junction VCSEL devices mean that the VCSEL unit in the VCSEL device is connected to one tunnel junction. A multi-junction VCSEL device indicates that a VCSEL unit in the VCSEL device has multiple tunnel junctions.

The market has a need for much higher power-converted-efficiency (PCE) for high-power VCSEL dot matrix devices. Single-junction VCSEL devices have difficulty achieving high PCE while achieving high output power due to their resistive characteristics. In addition, large currents are required to drive single-junction high-power VCSEL devices, and in practical applications, the algorithm has strict requirements on the rise time of the current pulse, which means that there are demands on the design of the driving circuit board. is difficult and technically difficult to realize.

Multi-junction VCSEL devices, compared to single-junction VCSEL devices, can alleviate some of the above deficiencies inherent in single-junction VCSEL devices under certain usage conditions. That is, for a given power requirement, a multi-junction VCSEL device can be driven with a relatively small current, and the reduction in operating current also improves the corresponding PCE.

However, since the geometric cavity length of multi-junction VCSEL devices is several times that of single-junction VCSEL devices, the far-field divergence angle of practical multi-junction VCSEL devices is difficult to meet the design requirements. In other words, it is difficult to achieve both performance in terms of photoelectric conversion efficiency and far-field divergence angle in a multi-junction VCSEL device.

Therefore, there is a need for a new VCSEL device that can achieve both photoelectric conversion efficiency and a large far-field divergence angle.

One of the advantages of the present application is to provide a VCSEL laser with a multi-tunnel junction and a method for manufacturing the same, wherein the VCSEL laser has a high photoelectric conversion efficiency while achieving a large far-field divergence angle. be able to.

To realize at least one of the above advantages, the present application provides a VCSEL laser with a multi-tunnel junction, comprising an epitaxial structure and a positive electrode and a negative electrode electrically connected to the epitaxial structure;
Here, the epitaxial structure is
A substrate and
a first reflector and a second reflector with an intervening reflection chamber located above the substrate;
a plurality of active regions and a plurality of tunnel junctions formed within the reflection chamber and alternately provided within the reflection chamber;
at least two regulation layers each having an aperture formed in the reflection chamber, wherein at least some of the apertures of the at least two regulation layers have different pore sizes.

In the VCSEL laser having a multi-tunnel junction according to the present application, the restriction layer is formed above each active region, and the number of restriction layers corresponds to the number of active regions.

In the VCSEL laser with multi-tunnel junction according to the present application, the regulation layer is selectively formed above some of the active regions, and the number of regulation layers is smaller than the number of active regions.

In the VCSEL laser with multi-tunnel junction according to the present application, the aperture diameter range is from 1 um to 100 um.

In the VCSEL laser with multi-tunnel junction according to the present application, the aperture diameter range is from 3 um to 50 um.

In the VCSEL laser with multi-tunnel junction according to the present application, the difference in hole diameter between the apertures ranges from 0.1 um to 95 um.

In the VCSEL laser with multi-tunnel junction according to the present application, the difference in hole diameter between the apertures ranges from 0.5 um to 20 um.

In the VCSEL laser having a multi-tunnel junction according to the present application, the sizes of the hole diameters between the openings of the at least two regulating layers are not equal to each other.

In the VCSEL laser with multi-tunnel junction according to the present application, the aperture of the at least one regulating layer closest to the second reflector has the smallest pore size.

In the VCSEL laser having a multi-tunnel junction according to the present application, the at least two regulation layers include at least one oxidation regulation layer formed by an oxidation process.

In the VCSEL laser having a multi-tunnel junction according to the present application, the at least two regulation layers include at least one ion regulation layer formed by an ion implantation process.

In the VCSEL laser having a multi-tunnel junction according to the present application, the at least two regulation layers include at least one oxidation regulation layer formed by an oxidation process, and the at least two regulation layers are formed by an ion implantation process. It includes at least one ion regulation layer.

In the VCSEL laser having a multi-tunnel junction according to the present application, the at least two regulation layers are all oxidation regulation layers formed by an oxidation process.

In the VCSEL laser with multi-tunnel junction according to the present application, the pitch between the oxidation control layers is equal to 0.5*the weighted sum of an integer multiple of the wavelength of the laser light by the VCSEL laser divided by the refractive index of the semiconductor therebetween. .

According to other aspects of the present application,
A substrate, a first reflector and a second reflector located above the substrate, and alternately provided between the first reflector and the second reflector are formed by an epitaxial growth process. forming an epitaxial structure including a plurality of active regions and a plurality of tunnel junctions;
forming at least two oxidation control layers each having an opening between the first reflector and the second reflector by an oxidation process, the step of forming at least two oxidation control layers each having an opening, the gap between at least some of the openings; and having different hole sizes.

In the manufacturing method according to the present application, the oxidation limiting layer is formed above each of the active regions, and the number of the oxidation limiting layers matches the number of the active regions.

In the manufacturing method according to the present application, the oxidation control layer is selectively formed above some of the active regions, and the number of the oxidation control layers is smaller than the number of the active regions.

In the manufacturing method according to the present application, the pore diameter range of the opening is 1 um to 100 um.

In the manufacturing method according to the present application, the pore diameter range of the opening is 3 um to 50 um.

In the manufacturing method according to the present application, the difference in pore diameter between the openings ranges from 0.1 um to 95 um.

In the manufacturing method according to the present application, the difference in pore diameter between the openings ranges from 0.5 um to 20 um.

In the manufacturing method according to the present application, the opening in the oxidation control layer closest to the second reflector among the at least two oxidation control layers has the smallest pore size.

Further objects and advantages of the present application will be fully realized through an understanding of the following description and drawings.

These and other objects, features, and advantages of the present application are fully realized by the following detailed description, drawings, and claims.

These and/or other aspects and advantages of the present application will become more clearly and understandable with reference to the following drawings and detailed description of the embodiments of the present application. Here,
1 illustrates a structural schematic diagram of a conventional single junction VCSEL unit. 1 illustrates a structural schematic diagram of a conventional multi-junction VCSEL unit. FIG. 2 illustrates another structural schematic diagram of a conventional multi-junction VCSEL unit. 1 illustrates a schematic structural diagram of a VCSEL laser according to an embodiment of the present application. 1 illustrates a structural schematic diagram of one variant implementation of a VCSEL laser according to an embodiment of the present application; FIG. Figure 3 illustrates a structural schematic diagram of another variant implementation of a VCSEL laser according to an embodiment of the present application; 1 illustrates a performance curve diagram of a VCSEL laser according to an embodiment of the present application; FIG. FIG. 3 illustrates another performance curve diagram of a VCSEL laser according to an embodiment of the present application. FIG. 4 illustrates a structural schematic diagram of a VCSEL laser according to another embodiment of the present application. Figure 3 illustrates a structural schematic diagram of a VCSEL laser according to a further embodiment of the present application; Figure 3 illustrates a structural schematic diagram of a VCSEL laser according to a further embodiment of the present application; 1 illustrates an explanatory diagram of a method for manufacturing a VCSEL laser according to an embodiment of the present application.

The terms and language used in the following specification and claims are not limited to their literal meaning, but are used solely by the applicant to provide a clear and consistent understanding of the present application. It is. Accordingly, those skilled in the art will appreciate the following description of the various embodiments of the present application for purposes of illustration only, and not for the purpose of limiting the present application, as defined by the appended claims and their equivalents. It is clear that an explanation is provided.

The term "one" should be understood as "at least one" or "one or more," i.e., in one embodiment, the number of an element may be one, and in other embodiments, the number of elements may be one. The number of elements may be plural, and the term "one" cannot be understood as a restriction on the number.

For example, ordinal numbers such as "first", "second", etc. are used to describe various components, but are not intended to limit those components herein. This term is only used to distinguish one component from another. For example, a first component may be referred to as a second component, and likewise a second component may be referred to as a first component, without departing from the teachings of the utility model concept. . The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.

The terminology used herein is for the purpose of describing various embodiments only and is not intended to be limiting. As used herein, the singular includes the plural unless the context clearly dictates otherwise. Additionally, the terms "comprising" and/or "having" as used herein refer to one or more other features, quantities, steps, operations, components, elements, or combinations thereof. It can be understood to specify the presence of said features, quantities, steps, operations, components, elements, or combinations thereof without excluding their presence or addition.

SUMMARY OF THE APPLICATION As mentioned above, single-junction VCSEL devices have difficulty achieving high PCE while achieving high output power due to their resistive characteristics. FIG. 1 illustrates a structural schematic diagram of a single-junction VCSEL unit in a conventional single-junction VCSEL device. As shown in FIG. 1, the conventional single junction VCSEL unit includes, from top to bottom, a negative electrode 1P, a substrate 2P, an N-DBR 3P, an active region 4P, an oxidation regulating layer 5P, a P-DBR 6P, and a positive electrode 7P. Here, during operation, if population inversion exists in the active region 4P and the gain provided by the laser medium sufficiently exceeds the loss, when current is injected from the positive electrode 7P and the negative electrode 1P, As the light intensity continues to increase and the electrons at the bottom of the conduction band in the high energy state transition to the low energy band, an amplification process occurs as light of a specific wavelength is reflected back and forth between P-DBR 6P and N-DBR 3P. is repeated to form a laser beam. In particular, in conventional single-junction VCSEL units, a single tunnel junction is formed in the active region.

FIG. 2 illustrates a structural schematic diagram of a conventional multi-junction VCSEL unit. As shown in FIG. 2, compared to the single-junction VCSEL unit shown in FIG. It includes an active region 4P and a plurality of tunnel junctions 8P. For example, in the multi-junction VCSEL unit shown in FIG. 2, the multi-junction VCSEL unit is implemented in a three-junction VCSEL unit and includes three active regions 4P and two tunnel junctions 8P, where the tunnel junction 8P is Two active regions are interposed between each 4P.

It should be known to those skilled in the art that tunnel junctions operate on the basis of tunneling effects, the so-called tunneling effect is when the carrier energy is low (less than the potential barrier height, i.e. E<V), when the thin film material itself indicates that carriers can pass through the thin film material with a certain probability because the thickness is thin (10 nm or less). When compared to single-junction VCSEL devices, multi-junction VCSEL devices can be driven with relatively small currents for a given power requirement, and the reduction in operating current also improves the corresponding PCE. Specifically, for a given power requirement, if a single-junction VCSEL device requires 10A of current drive, a two-junction VCSEL device only requires about 5A of current drive, and three Junction VCSEL devices require only 3A to 4A drive current.

However, since the geometric cavity length of multi-junction VCSEL devices is several times that of single-junction VCSEL devices, the far-field divergence angle of practical multi-junction VCSEL devices becomes difficult to meet the design requirements. In order to solve the problem that the far-field divergence angle of multi-junction VCSEL devices is too large, some manufacturers try to reduce the number of oxidation control layers 5P, as shown in FIG. In the multi-junction VCSEL unit shown in FIG. 3, only one oxidation control layer 5P is disposed. However, in the actual test process, the inventor of the present application found that reducing the number of oxidation regulating layers reduces the luminous efficiency, that is, the photoelectric conversion efficiency becomes very low again, and in this way, the multi-layer The advantages inherent to junction VCSEL lasers are eliminated. According to the analysis, the purpose of the oxidation regulation layer is to limit carriers, and if the number of oxidation regulation layers is reduced more than necessary, carriers will be restricted too little, the current threshold will increase, and the photoelectric conversion efficiency will decrease. It ends up. In other words, the conventional solutions still cannot balance the performance performance of multi-junction VCSEL devices in both photoelectric conversion efficiency and far-field divergence angle.

Therefore, the inventor of the present application attempted to change the arrangement form of the regulation layer (the regulation layer here includes not only the oxidation regulation layer but also the ion regulation layer formed by the ion implantation process). We aimed to achieve both performance in terms of photoelectric conversion efficiency and far-field divergence angle.

Through theoretical studies and experimental tests, the inventors of the present application have determined that the photovoltaic conversion of VCSEL devices can be improved by changing the pore size of the opening in the regulating layer and/or by changing the positioning of the regulating layer with respect to the active region and the tunnel junction. We have discovered that it is possible to achieve both performance in terms of efficiency and far-field divergence angle. Specifically, theoretically, as mentioned above, the purpose of the oxidation regulating layer is to limit carriers, and if there is too little restriction on carriers, the threshold value will increase and the photoelectric conversion efficiency will decrease, but vice versa. On the other hand, too many restrictions affect the carrier distribution, which in turn affects the optical mode, and furthermore, the far-field divergence angle becomes uncontrolled. Therefore, the inventors of the present application adjust the pore sizes of the openings in the regulation layer (more specifically, make the pore sizes of some openings in the regulation layer unequal) and/or By changing the location (that is, adjusting the number and location of the regulating layers), it is possible to achieve both the photoelectric conversion efficiency and the far-field spread angle of the VCSEL device.

Accordingly, the present application includes an epitaxial structure and a positive electrode and a negative electrode electrically connected to the epitaxial structure, wherein the epitaxial structure includes a substrate and a reflection chamber located above the substrate. an intervening first reflector and a second reflector, a plurality of active regions and a plurality of tunnel junctions formed within the reflection chamber and alternating within the reflection chamber; and a plurality of tunnel junctions formed within the reflection chamber; at least two regulation layers each having an opening, wherein at least some of the openings in the at least two regulation layers have different pore diameters, the VCSEL having a multi-tunnel junction. Suggest laser.

Schematic VCSEL Laser FIG. 4A illustrates a structural schematic diagram of a VCSEL laser according to an embodiment of the present application. As shown in FIG. 4A, the VCSEL laser according to an embodiment of the present application has a multi-tunnel junction. Here, the tunnel junction operates based on the tunnel effect, and the so-called tunnel effect means that when the carrier energy is low (less than the potential barrier height, that is, E<V), the thin film material itself is thin (10 nm). In the following case), carriers can pass through the thin film material with a certain probability.

In particular, in the VCSEL laser shown in FIG. 4A, the VCSEL laser includes one VCSEL unit, and the VCSEL unit has three tunnel junctions.

In other examples of the present application, the VCSEL laser may include a greater number of VCSEL units, and of course the VCSEL units may include a greater or lesser number of tunnel junctions; It should be understood that this application is not limiting in this regard. Usually, in a VCSEL laser, the number of tunnel junctions is one more than the number of active regions, for example, in the VCSEL laser shown in FIG. 4A, the VCSEL unit has three tunnel junctions and two active regions. has.

In the VCSEL laser shown in FIG. 4A, the VCSEL laser includes an epitaxial structure 10 produced by an epitaxial growth process (e.g., chemical vapor deposition of a metal-organic compound) and electrically connected to the epitaxial structure 10. a positive electrode 20 and a negative electrode 30, wherein the epitaxial structure 10 includes a substrate 11 and a first reflector 12 and a second reflector positioned above the substrate 11 with a reflection chamber 100 interposed therebetween. a reflector 13 , a plurality of active regions 14 and a plurality of tunnel junctions 15 formed within the reflection chamber 100 and arranged alternately within the reflection chamber 100 , and respective openings formed within the reflection chamber 100 . 160, wherein at least some of the openings 160 of the at least two regulating layers 16 have different hole diameters.

Specifically, in the VCSEL laser shown in FIG. 4A, the VCSEL laser includes three active regions 14 and two tunnel junctions 15, where the two tunnel junctions 15 and the Three active regions 14 are provided alternately within the reflection chamber 100 formed by the first reflector 12 and the second reflector 13, i.e. two active regions per layer of the tunnel junction 15. The active region 14 is interposed between the active regions 14 .

In the VCSEL laser, the active region 14 includes quantum wells (of course, in other examples herein, the active region 14 can include quantum dots) and includes AlInGaAs (e.g., AlInGaAs, GaAs, AlGaAs, and InGaAs). ), InGaAsP (e.g. InGaAsP, GaAs, InGaAs, GaAsP and GaP), GaAsSb (e.g. GaAsSb, GaAs and GaSb), InGaAsN (e.g. InGaAsN, GaAs, InGaAs, GaAsN and GaN) or AlInGaAsP ( For example, AlInGaAsP, AlInGaAs , AlGaAs, InGaAs, InGaAsP, GaAs, InGaAs, GaAsP and GaP). Of course, in embodiments of the present application, the active region 14 may also be made of other compositions for forming quantum well layers.

In the VCSEL laser, the first reflector 12 and the second reflector 13 each include a system of alternating layers of materials with different refractive indices, and this system is a distributed Bragg reflector. form. The material selection for the alternating layers depends on the required operating wavelength of the laser. In a specific example of the present application, the first reflector 12 and the second reflector 13 may be formed of alternating layers of high aluminum content AlGaAs and low aluminum content AlGaAs. Note that the optical thickness of the alternating layers is equal to or approximately equal to 1/4 of the operating wavelength of the laser. In particular, in the present embodiment, the first reflector 12 is an N-doped distributed Bragg reflector, ie, an N-DBR, and the second reflector 13 is a P-doped distributed Bragg reflector. A Bragg reflector, namely a P-DBR, where the materials of the P-type doped DBR and the N-type doped DBR 03 are InGaAsP/InP, AlGaInAs/AlInAs, AlGaAsSb/AlAsSb, GaAs/AlGaAs. , Si/MgO, Si/Al2O3, etc., but are not limited to these.

In the VCSEL laser, the substrate 1101 may include, but is not limited to, a silicon substrate 11, a sapphire substrate 11, a gallium arsenide substrate 11, and the like.

As shown in FIG. 4A, the plurality of active regions 14 are interposed in the reflection chamber 100 between the first reflector 12 and the second reflector 13, where photons are excited. After that, the light is reflected back and forth in the reflection chamber 100 and amplified continuously to form laser oscillation, thereby forming a laser beam. Depending on the arrangement and design of the first reflector 12 and the second reflector 13, the emission direction of the laser beam, for example, the emission direction from the second reflector 13 (that is, the emission from the upper surface of the VCSEL laser) Those skilled in the art should know that it is possible to selectively control whether the laser beam is emitted from the first reflector 12 (ie, emitted from the bottom of the VCSEL laser). In the embodiment of the present application, the first reflector 12 and the second reflector 13 are designed such that the laser light is emitted from the second reflector 13 after being oscillated within the reflection chamber 100. In other words, the VCSEL laser is a semiconductor laser that extracts light from the front.

In order to limit the current mode and emission mode of the VCSEL laser, the VCSEL laser according to embodiments of the present application further includes at least two constraining layers 16 formed in the reflection chamber 100, each having an aperture 160. Here, at least some of the openings 160 of the at least two regulating layers 16 have different hole diameters. Particularly, in the VCSEL laser shown in FIG. 4A, the at least two regulation layers 16 are at least two oxidation regulation layers 16A formed above part of the active region 14 by an oxidation process. In addition, the size of the hole diameter of the opening 160 of the oxidation control layer 16A is determined by the degree of oxidation of the oxidation control layer 16A.

More specifically, in the VCSEL laser shown in FIG. 4A, the number of oxidation control layers 16A is equal to the number of active regions 14, that is, in the VCSEL laser shown in FIG. The VCSEL laser includes three oxidation control layers 16A formed above each active region 14, respectively.

In the embodiment of the present application, at least some of the apertures 160 of the at least two oxidation control layers 16A have different hole diameters, that is, in the embodiment of the present application, the VCSEL laser is asymmetric. It differs from conventional multi-junction VCSEL units in that it has a structure of the oxidation control layer 16A.

It has been found through measurements that the asymmetric oxide layer structure arrangement allows the VCSEL laser to achieve both performance in terms of photoelectric conversion efficiency and far-field divergence angle. Specifically, as shown in FIGS. 5 and 6, the VCSEL laser has a far-field divergence angle of 19 degrees, an optical power of 6.5 W, and a photovoltaic power output of 2.7 A drive current. Conversion efficiency can reach up to 47%.

More specifically, in the embodiment of the present application, the pore diameters of the plurality of openings 160 in the at least two oxidation control layers 16A do not have to be equal; for example, in the example shown in FIG. 4A, , the three openings 160 have their pore diameters gradually decreasing from top to bottom. Alternatively, in the example shown in FIG. 4B, the hole diameter sizes of the three openings 160 increase sequentially from top to bottom. Alternatively, in the example shown in FIG. 4C, the pore size of the three apertures 160 first decreases and then increases from top to bottom. Of course, in other examples of the present application, the sizes of the pore diameters of the plurality of openings 160 of the plurality of oxidation control layers 16A may be partially equal, and this is not limited in the present application.

More specifically, in the embodiment of the present application, the pore size range of the aperture 160 is 1 um to 100 um, preferably, the pore size range of the aperture 160 is 3 um to 50 um. Further, in an embodiment of the present application, the range of the difference in pore diameter between the openings 160 is 0.1 um to 95 um, and preferably the range of the difference in pore diameter between the openings 160 is 0.5 um to 20 um. . Further, in the embodiment of the present application, the pitch between the oxidation control layers 16A is equal to the weighted sum of 0.5*integer multiple of the wavelength of the laser light from the VCSEL laser divided by the refractive index of the semiconductor therebetween, where: , the semiconductor between them indicates the semiconductor material between the two oxidation control layers 16A, and the weighted sum indicates the sum of values obtained by multiplying the refractive index of the semiconductor by a preset weight. The distance between the oxidation control layer 16A and the active region 14 is determined by dividing 0.25*odd multiple of the wavelength of the laser beam from the VCSEL laser by the refractive index of the substrate 11. For example, when the GaAs substrate 11 has a refractive index of 3.4 and the multiple is 3, the distance between the oxidation control layer 16A and the active region 14 is 0.25*940/3.4*3~ It is 200 nm.

More preferably, in the embodiment of the present application, the opening 160 of the at least one oxidation control layer 16A closest to the second reflector 13 has the smallest pore diameter.
Specifically, under the same oxidation process conditions, the oxidation control layer 16A having different pore diameters can be formed by controlling the thickness of the oxidation control layer 16A or the aluminum content in the oxidation control layer 16A. It can be realized. In particular, in the embodiment of the present application, the aluminum content of the oxidation control layer 16A is in the range of 95% to 100%, and the thickness thereof is in the range of 10 nm to 50 nm.

In the embodiment of the present application, since the oxidation control layer 16A has different pore diameters, the amount of oxidation of the oxidation control layer 16A as a whole can be reduced, and thereby the overall stress caused by the oxidation control layer 16A can be reduced. smaller, thus increasing the reliability of the VCSEL laser.

In order to further avoid the problem of lack of reliability due to too many oxidation control layers 16A, in another example of the present application, the relative positional relationship between the oxidation control layer 16A and the active region 14 and the tunnel junction 15 is can be changed. FIG. 7 illustrates a structural schematic diagram of a VCSEL laser according to another embodiment of the present application, wherein the VCSEL laser shown in FIG. 7 is a modification of the VCSEL laser shown in FIGS. 4A to 4C. This is an example. Specifically, in the VCSEL laser shown in FIG. 7, the oxidation control layer 16A is selectively formed above some of the active regions 14, that is, the number of the oxidation control layer 16A is It is smaller than the number of active regions 14 (the number of oxidation control layers 16A here still has to be 2 or more).

In other words, in another example of the present application, one oxidation control layer 16A is not arranged for each active region 14, and in this way, not only can the photoelectric conversion efficiency of the VCSEL laser be ensured, but also its stability can be ensured. Can be secured. Such a configuration is more important for VCSEL devices with more junction tunnel junctions 15.

In this embodiment, when one oxidation control layer 16A is not arranged for each active region 14, the pore diameters of the oxidation control layers 16A may all be arranged the same. That is, when one oxidation control layer 16A is not arranged for each active region 14, the oxidation control layer 16A may be arranged to have a symmetrical structure, but this is not limited in the present application.

Furthermore, in embodiments of the present application, the VCSEL laser further includes a positive electrode 20 and a negative electrode 30 electrically connected to the epitaxial structure 10 in order to conduct the epitaxial structure 10 to generate laser light. The positive electrode 20 is formed on the top surface of the epitaxial structure 10 and the negative electrode 30 is formed on the bottom surface of the epitaxial structure 10. More specifically, in the embodiment of the present application, the positive electrode 20 is formed above the second reflector 13 of the epitaxial structure 10, and the negative electrode 30 is formed above the substrate 11 of the epitaxial structure 10. Formed downwards.

Note that in other examples of the present application, the positive electrode 20 and the negative electrode 30 may be formed at other positions of the VCSEL laser, and the present application is not limited to this.

FIG. 8 illustrates a structural schematic diagram of a VCSEL laser according to a further embodiment of the present application. Compared to the VCSEL laser shown in FIGS. 4A-4B and FIG. 7, in the present embodiment, the regulation layer 16 in the VCSEL laser is an ion regulation layer 16 formed by an ion implantation process.

As shown in FIG. 8, in the embodiment of the present application, the number of ion regulating layers 16 is equal to the number of active regions 14, i.e., for each active region 14 in the VCSEL laser shown in FIG. It includes three ion regulation layers 16B formed above. Accordingly, in the embodiment of the present application, at least some of the apertures 160 of the at least two ion regulating layers 16B have different hole diameters, that is, the VCSEL laser has asymmetric ion It has a regulation layer 16B structure.

More specifically, in the embodiment of the present application, the pore diameters of the plurality of openings 160 of the plurality of ion regulation layers 16B do not have to be equal; The sizes of the pore diameters of the openings 160 may be partially equal, and this is not limited in this application.

More specifically, in the embodiment of the present application, the pore size range of the aperture 160 is 1 um to 100 um, preferably, the pore size range of the aperture 160 is 3 um to 50 um. Further, in an embodiment of the present application, the range of the difference in pore diameter between the openings 160 is 0.1 um to 95 um, and preferably the range of the difference in pore diameter between the openings 160 is 0.5 um to 20 um. . More preferably, the opening 160 of the at least one ion regulating layer 16B closest to the second reflector 13 has the smallest pore diameter.

Specifically, the ions to be injected include, but are not limited to, hydrogen ions, oxygen ions, etc., and may be injected into the reflection chamber 100 from the upper surface of the second reflector 13. The depth at which the ions are implanted can be based on energy control during implantation. Specifically, when implanting deeply, the energy is increased so that the implanted ions approach the first reflector 12, and when implanting shallowly, the implanted ions move closer to the second reflector 13. The energy can be reduced to get closer. Accordingly, the size of the opening 160 in the ion regulating layer 16B can be controlled based on the ion implantation energy and the ion implantation amount.

In addition, in another example of the present application, as shown in FIG. 9, the regulation layer 16 may further include a combination of an ion regulation layer 16B and the oxidation regulation layer 16A, that is, the at least two regulation layers 16 are It includes an oxidation regulation layer 16A formed by at least one oxidation process, and the at least two regulation layers 16 include an ion regulation layer 16B formed by at least one ion implantation process.

From the above, the VCSEL laser according to embodiments of the present application has been described, and by adjusting the pore size of the opening 160 of the regulation layer 16 and/or the regulation layer 16 between the active region 14 and the tunnel junction 15. By adjusting the position and installation, it is possible to achieve both the photoelectric conversion efficiency and the far-field divergence angle of the VCSEL device.

Schematic Manufacturing Method FIG. 10 illustrates an explanatory diagram of a method for manufacturing a VCSEL laser according to an embodiment of the present application.

As shown in FIG. 10, in the manufacturing process according to the embodiment of the present application, first, by an epitaxial growth process, a substrate 11, a first reflector 12 and a second reflector 13 located above the substrate 11, and the forming an epitaxial structure 10 formed between a first reflector 12 and said second reflector 13 and comprising a plurality of alternating active regions 14 and a plurality of tunnel junctions 15; , forming at least two oxidation control layers 16A each having an opening 160 between the first reflector 12 and the second reflector 14 by an oxidation process, the step of forming at least two oxidation control layers 16A each having an opening 160; At least some of the openings 160 have different hole diameters.

In one example, in the method for manufacturing a VCSEL laser described above, the oxidation control layer 16A is formed above each of the active regions 14, and the number of the oxidation control layers 16A matches the number of the active regions 14.

In one example, in the method for manufacturing a VCSEL laser described above, the oxidation control layer 16A is selectively formed above some of the active regions 14, and the number of the oxidation control layers 16A is equal to the number of the active regions 14. less than.

In one example, in the method for manufacturing a VCSEL laser described above, the diameter range of the aperture 160 is 1 um to 100 um.

In one example, in the method for manufacturing a VCSEL laser described above, the diameter range of the aperture 160 is 3 um to 50 um.

In one example, in the method for manufacturing a VCSEL laser described above, the difference in hole diameter between the apertures 160 ranges from 0.1 um to 95 um.

In one example, in the method for manufacturing a VCSEL laser described above, the difference in hole diameter between the apertures 160 ranges from 0.5 um to 20 um.

In one example, in the method for manufacturing a VCSEL laser described above, the opening 160 of the oxidation control layer 16A closest to the second reflector 13 among the at least two oxidation control layers 16A has the smallest hole diameter.

From the above, a method for manufacturing the VCSEL laser according to an embodiment of the present application has been described and is capable of manufacturing a VCSEL laser as described above. It should be noted that the manufacturing process shown in FIG. It should be understood that if the layer 16 is a combination of an ion control layer 16B and an oxidation control layer 16A, the corresponding manufacturing process can be seen with simple variations, and a description thereof will be omitted.

The basic principles of the present application have been explained above by linking specific examples, but the advantages, advantages, effects, etc. mentioned in this application are merely illustrative and not limiting. It is noted that no advantage, effect, etc. is considered essential to each embodiment of the present application. Furthermore, the specific details disclosed above are for an exemplary role and an easy-to-understand role only, and are not limiting; This does not limit what must be achieved by adopting the above.

Any block diagrams of devices, apparatus, equipment, or systems to which this application relates are illustrative examples only and are not intended to require or imply that the devices, apparatus, equipment, or systems must be connected, laid out, or arranged in accordance with the block diagrams. Not yet. Those skilled in the art will recognize that these devices, apparatus, equipment, and systems can be connected, laid out, and arranged in any manner. Words such as "comprising," "containing," "having," and the like are open words meaning "including, but not limited to," and can be used interchangeably. As used herein, the terms "or" and "and" mean the terms "and/or" and may be used interchangeably, unless the context clearly indicates otherwise. As used herein, the term "for example" refers to, and can be used interchangeably with, the phrase "for example, but not limited to."

It should also be noted that in the devices, equipment, and methods of the present application, each component or each step can be disassembled and/or recombined. These decompositions and/or recombinations should be considered as equivalent proposals for the present application.

The previous description of the disclosed aspects is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be very obvious to those skilled in the art, and the general principles defined herein may be applied to other embodiments without departing from the scope of this application. It is. Accordingly, this application is not intended to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

For the benefit of illustration and explanation, the above description has already been given. Furthermore, the description is not intended to limit the embodiments of the application to the form disclosed herein. While many exemplary aspects and embodiments have been discussed above, several variations, amendments, changes, additions, and subcombinations thereof will be recognized by those skilled in the art.

Claims (18)

comprising an epitaxial structure and a positive electrode and a negative electrode electrically connected to the epitaxial structure,
The epitaxial structure is
A substrate and
a first reflector and a second reflector with an intervening reflection chamber located above the substrate;
a plurality of active regions and a plurality of tunnel junctions formed within the reflection chamber and alternately provided within the reflection chamber;
at least two regulation layers each having an opening formed in the reflection chamber, wherein at least some of the openings of the at least two regulation layers have different pore diameters;
The regulation layer is formed above some of the active regions, and the number of regulation layers is smaller than the number of active regions.
A VCSEL laser having a multi-tunnel junction characterized by: The pore diameter range of the opening is 1 um to 100 um,
A VCSEL laser having a multi-tunnel junction according to claim 1. The pore diameter range of the opening is 3um to 50um,
A VCSEL laser having a multi-tunnel junction according to claim 2. The range of the difference in pore diameter between the openings is 0.1 um to 95 um,
4. A VCSEL laser having a multi-tunnel junction according to claim 3. The range of the difference in pore diameter between the openings is 0.5 um to 20 um,
A VCSEL laser having a multi-tunnel junction according to claim 4. 3. The VCSEL laser having a multi-tunnel junction according to claim 2, wherein the sizes of the hole diameters between the openings of the at least two regulating layers are not equal to each other. of the at least two regulation layers, the opening in the regulation layer closest to the second reflector has the smallest pore size;
A VCSEL laser having a multi-tunnel junction according to claim 1. The at least two regulation layers include at least one oxidation regulation layer.
A VCSEL laser having a multi-tunnel junction according to claim 1. The at least two regulation layers include at least one ion regulation layer.
A VCSEL laser having a multi-tunnel junction according to claim 1. The multi-tunnel junction according to claim 1, wherein the at least two regulation layers include at least one oxidation regulation layer, and the at least two regulation layers include at least one ion regulation layer. VCSEL laser with the at least two regulation layers are all oxidation regulation layers;
A VCSEL laser having a multi-tunnel junction according to claim 8. The pitch between the oxidation control layers is equal to the weighted sum of 0.5*integral multiples of the wavelength of laser light from the VCSEL laser divided by the refractive index of the semiconductor therebetween;
A VCSEL laser with a multi-tunnel junction according to claim 11. A substrate, a first reflector and a second reflector located above the substrate, and alternately provided between the first reflector and the second reflector are formed by an epitaxial growth process. forming an epitaxial structure including a plurality of active regions and a plurality of tunnel junctions;
forming at least two oxidation control layers each having an opening between the first reflector and the second reflector by an oxidation process, the step of forming at least two oxidation control layers each having an opening, the gap between at least some of the openings; have different pore sizes;
The oxidation control layer is formed above some of the active regions, and the number of the oxidation control layers is smaller than the number of the active regions.
A method for manufacturing a VCSEL laser having a multi-tunnel junction, characterized in that:
The pore diameter range of the opening is 1 um to 100 um,
The manufacturing method according to claim 13, characterized in that: The pore diameter range of the opening is 3um to 50um,
The manufacturing method according to claim 13, characterized in that: The range of the difference in pore diameter between the openings is 0.1 um to 95 um,
The manufacturing method according to claim 15, characterized in that: The range of the difference in pore diameter between the openings is 0.5 um to 20 um,
The manufacturing method according to claim 16, characterized in that: of the at least two oxidation control layers, the opening in the oxidation control layer closest to the second reflector has the smallest pore size;
The manufacturing method according to claim 13, characterized in that: