JP7372898B2 - 液晶高分子膜 - Google Patents
液晶高分子膜 Download PDFInfo
- Publication number
- JP7372898B2 JP7372898B2 JP2020199487A JP2020199487A JP7372898B2 JP 7372898 B2 JP7372898 B2 JP 7372898B2 JP 2020199487 A JP2020199487 A JP 2020199487A JP 2020199487 A JP2020199487 A JP 2020199487A JP 7372898 B2 JP7372898 B2 JP 7372898B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- crystal polymer
- polymer film
- metal foil
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229920000106 Liquid crystal polymer Polymers 0.000 title claims description 134
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 title claims description 134
- 238000000034 method Methods 0.000 claims description 27
- 239000011888 foil Substances 0.000 description 77
- 229910052751 metal Inorganic materials 0.000 description 74
- 239000002184 metal Substances 0.000 description 74
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 23
- 239000011889 copper foil Substances 0.000 description 22
- 230000000052 comparative effect Effects 0.000 description 20
- 229920005989 resin Polymers 0.000 description 19
- 239000011347 resin Substances 0.000 description 19
- 238000012360 testing method Methods 0.000 description 14
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 10
- FJKROLUGYXJWQN-UHFFFAOYSA-N 4-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 8
- 238000011282 treatment Methods 0.000 description 8
- 238000003466 welding Methods 0.000 description 8
- -1 aliphatic hydroxy compounds Chemical class 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 229940090248 4-hydroxybenzoic acid Drugs 0.000 description 4
- KAUQJMHLAFIZDU-UHFFFAOYSA-N 6-Hydroxy-2-naphthoic acid Chemical compound C1=C(O)C=CC2=CC(C(=O)O)=CC=C21 KAUQJMHLAFIZDU-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 229910001873 dinitrogen Inorganic materials 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 238000006640 acetylation reaction Methods 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical class OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 3
- 238000005266 casting Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- ALYNCZNDIQEVRV-UHFFFAOYSA-N 4-aminobenzoic acid Chemical compound NC1=CC=C(C(O)=O)C=C1 ALYNCZNDIQEVRV-UHFFFAOYSA-N 0.000 description 2
- PLIKAWJENQZMHA-UHFFFAOYSA-N 4-aminophenol Chemical compound NC1=CC=C(O)C=C1 PLIKAWJENQZMHA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
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- GOGZBMRXLADNEV-UHFFFAOYSA-N naphthalene-2,6-diamine Chemical compound C1=C(N)C=CC2=CC(N)=CC=C21 GOGZBMRXLADNEV-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
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- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
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- 238000012545 processing Methods 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- MCTWTZJPVLRJOU-UHFFFAOYSA-N 1-methyl-1H-imidazole Chemical compound CN1C=CN=C1 MCTWTZJPVLRJOU-UHFFFAOYSA-N 0.000 description 1
- JUPXISQAWLNMLW-UHFFFAOYSA-N 3-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=CC(O)=C1.OC(=O)C1=CC=CC(O)=C1 JUPXISQAWLNMLW-UHFFFAOYSA-N 0.000 description 1
- QGNGOGOOPUYKMC-UHFFFAOYSA-N 4-hydroxy-6-methylaniline Chemical compound CC1=CC(O)=CC=C1N QGNGOGOOPUYKMC-UHFFFAOYSA-N 0.000 description 1
- BOXYODYSHAHWPN-UHFFFAOYSA-N 4-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1.OC(=O)C1=CC=C(O)C=C1 BOXYODYSHAHWPN-UHFFFAOYSA-N 0.000 description 1
- DRNSWCJVNHUPHS-UHFFFAOYSA-N 6-hydroxynaphthalene-2-carboxylic acid Chemical compound C1=C(O)C=CC2=CC(C(=O)O)=CC=C21.C1=C(O)C=CC2=CC(C(=O)O)=CC=C21 DRNSWCJVNHUPHS-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229960004050 aminobenzoic acid Drugs 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical group C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000003851 corona treatment Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
- YVSCCMNRWFOKDU-UHFFFAOYSA-N hexanedioic acid Chemical compound OC(=O)CCCCC(O)=O.OC(=O)CCCCC(O)=O YVSCCMNRWFOKDU-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- KBWUXUSGYHVTSX-UHFFFAOYSA-N naphthalene-2,6-dicarboxylic acid Chemical compound C1=C(C(O)=O)C=CC2=CC(C(=O)O)=CC=C21.C1=C(C(O)=O)C=CC2=CC(C(=O)O)=CC=C21 KBWUXUSGYHVTSX-UHFFFAOYSA-N 0.000 description 1
- MNZMMCVIXORAQL-UHFFFAOYSA-N naphthalene-2,6-diol Chemical compound C1=C(O)C=CC2=CC(O)=CC=C21 MNZMMCVIXORAQL-UHFFFAOYSA-N 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
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- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002987 primer (paints) Substances 0.000 description 1
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 1
- 229960001755 resorcinol Drugs 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- NCPXQVVMIXIKTN-UHFFFAOYSA-N trisodium;phosphite Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])[O-] NCPXQVVMIXIKTN-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
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Description
例を挙げると、芳香族または脂肪族ヒドロキシ化合物(例えば、ヒドロキノン(hydroquinone)、レゾルシノール(resorcin)、2,6-ナフタレンジオール(2,6-naphthalenediol)、エチレングリコール(ethanediol)、1,4-ブタンジオール(1,4-butanediol)、1,6-ヘキサンジオール(1,6-hexanediol))、芳香族または脂肪族ジカルボン酸(例えば、テレフタル酸(terephthalic acid)、イソフタル酸(isophthalic acid)、2,6-ナフタレンジカルボン酸(2,6-naphthalenedicarboxylic acid)、2-クロロテレフタル酸(2-chloroterephthalic acid)、アジピン酸(adipic acid))、芳香族ヒドロキシカルボン酸(例えば、3-ヒドロキシ安息香酸(3-hydroxybenzoic acid)、4-ヒドロキシ安息香酸(4-hydroxybenzoic acid)、6-ヒドロキシ-2-ナフタレンカルボン酸(6-hydroxy-2-naphthalene carboxylic acid)、4’-ヒドロキシ-4-ビフェニルカルボン酸(4’-hydroxy-4-biphenylcarboxylic acid))、芳香族アミン化合物(例えば、p-フェニレンジアミン(p-phenylenediamine)、4,4’-ジアミノビフェニル(4,4’-diaminobiphenyl)、2,6-ナフタレンジアミン(naphthalene-2,6-diamine)、4-アミノフェノール(4-aminophenol)、4-アミノ-3-メチルフェノール(4-amino-3-methyl phenol)、4-アミノ安息香酸(4-aminobenzoic acid))を原料として使用し、液晶高分子樹脂を調製でき、さらにこの液晶高分子樹脂を利用して本発明の液晶高分子膜を製造する。
本発明の一実施態様において、6-ヒドロキシ-2-ナフタレンカルボン酸、4-ヒドロキシ安息香酸および無水酢酸(acetyl anhydride)を用いて、本発明の液晶高分子膜を調製する液晶高分子樹脂を得ることができる。一実施態様において、液晶高分子樹脂の融点は約250℃から360℃である。
当業者は下記実施例および比較例の内容により、本発明が達成できる利点および効果を容易に理解できる。本明細書で列挙する実施例は本発明の実施方式を模範的に説明するために用いたに過ぎず、本発明の範囲を制限するのではないことを理解すべきであり、当業者はその通常の知識に基づき、本発明の主旨を逸脱せずに各種手直し、変更を行い、本発明の内容を実施または応用できる。
調製例1:液晶高分子樹脂
3リットルの圧力釜で、700グラムの6-ヒドロキシ-2-ナフタレンカルボン酸、954グラムの4-ヒドロキシ安息香酸、1085グラムの無水酢酸および1.3グラムの亜リン酸ナトリウム(sodium phosphite)を、窒素ガス雰囲気、160℃、常圧の環境下で約2時間アセチル化反応させる。続いて、1時間当たり30℃の昇温速度で320℃まで昇温させ、さらにこの温度条件下で圧力を760トール(torr)から3torr以下までゆっくりと低下させ、温度を320℃から340℃まで昇温させる。その後、撹拌出力を上昇させ、昇圧、吐出、ストランド、ペレット化を行い、融点が約265℃、粘度(@300℃)が約60パスカル・秒(Pa・s)の液晶高分子樹脂が得られる。
3リットルの圧力釜で、440グラムの6-ヒドロキシ-2-ナフタレンカルボン酸、1145グラムの4-ヒドロキシ安息香酸、1085グラムの無水酢酸および1.3グラムの亜リン酸ナトリウムを、窒素ガス雰囲気、160℃、常圧の環境下で約2時間アセチル化反応させる。続いて、1時間当たり30℃の昇温速度で320℃まで昇温させ、さらにこの温度条件下で圧力を760torrから3torr以下までゆっくりと低下させ、温度を320℃から340℃まで昇温させる。その後、撹拌出力を上昇させ、昇圧、吐出、ストランド、ペレット化を行い、融点が約305℃、粘度(@300℃)が約40Pa・sの液晶高分子樹脂が得られる。
3リットルの圧力釜で、540グラムの6-ヒドロキシ-2-ナフタレンカルボン酸、1071グラムの4-ヒドロキシ安息香酸、1086グラムの無水酢酸、1.3グラムの亜リン酸ナトリウムおよび0.3グラムの1-メチルイミダゾール(1-methylimidazole)を、窒素ガス雰囲気、160℃、常圧の環境下で約2時間アセチル化反応させる。続いて、1時間当たり30℃の昇温速度で320℃まで昇温させ、さらにこの温度条件下で圧力を760torrから3torr以下までゆっくりと低下させ、温度を320℃から340℃まで昇温させる。その後、撹拌出力を上昇させ、昇圧、吐出、ストランド、ペレット化を行い、融点が約278℃、粘度(@300℃)が約45Pa・sの液晶高分子樹脂が得られる。
実施例1から13、比較例1から5:液晶高分子膜
前記調製例1から3で得られた液晶高分子樹脂を原料として用い、さらに基本的に下記の方法により、それぞれ実施例1から13および比較例1から5で得られる液晶高分子膜を調製する。
本試験例は前記実施例1から13および比較例1から5で製造した液晶高分子膜を被験サンプルとし、レーザ顕微鏡(型番:LEXT OLS5000-SAF、Olympusより購入、対物レンズはMPLAPON-50xLEXT)を利用し、光源波長405ナノメートル、対物レンズ50倍、光学ズーム1.0倍の条件において、24±3℃の温度、63±3%の相対湿度下で、各被験サンプルの表面形態を観察して、そのイメージを取り込む。被験サンプルのRa、RyおよびRzはJIS B 0601:1994の方法に基づき、さらに分析の過程で、各被験サンプルの評価長さ(evaluation length)を4ミリメートルに設定し、カットオフ値(cutoff value、λc)を0.8ミリメートルに設定して、各被験サンプルの1つの表面のRa、RyおよびRzを算出する。その結果は下表2に示す通りである。
前記実施例1から13および比較例1から5の液晶高分子膜を用いて、市販の銅箔と重ね合わせ、それぞれ実施例1Aから13Aおよび比較例1Aから5Aの積層板を製造する。前記市販の銅箔の型番および関連説明は、以下の通りである。
銅箔1:CF-T49A-HD2、福田金属箔粉工業株式会社より購入。Rzは約1.2μm。
銅箔2:CF-H9A-HD2、福田金属箔粉工業株式会社より購入。Rzは約1.0μm。
銅箔3:3EC-M2S-HTE-SP2、三井金属鉱業株式会社より購入。Rzは約1.1μm。
銅箔4:TQ-M7-VSP、三井金属鉱業株式会社より購入。Rzは約1.1μm。
本試験例はIPC-TM-650 No.:2.4.9の測定方法に基づき、前記実施例1Aから13Aおよび比較例1Aから5Aの積層板を、長さ約228.6ミリメートル、幅約3.2ミリメートルのエッチング試験片(etched specimen)に作製し、さらに各エッチング試験片を23±2℃の温度、50±5%の相対湿度下に24時間置き、安定させる。続いて、各エッチング試験片を両面テープで測定機(装置の型番:HT-9102、弘達儀器股▲分▼有限公司(Hung Ta Instrument Co.,Ltd.)より購入)の治具に貼り付け、50.8ミリメートル/分(mm/min)の引き剥がし速度で治具上のエッチング試験片を引き剥がし、さらに引き剥がし過程における引き剥がし張力を続けて記録する。ここで、引き剥がし張力は測定機の許容範囲の15%から85%に制御し、引き剥がし長さは少なくとも57.2ミリメートルを超えるべきであり、さらに最初に6.4ミリメートルを引き剥がす引き剥がし張力は無視して計算しない。その結果は下表2に示す通りである。
本試験例は前記実施例1Aから13Aおよび比較例1Aから5Aの積層板を、長さ約100ミリメートル、幅約140ミリメートル、抵抗約50オーム(Ω)のストリップライン試験片(strip line specimen)に作製し、マイクロ波ネットワークアナライザ(装置の型番:8722ES、アジレントテクノロジー(Agilent Technology)社より購入)、プローブ(型番:ACP40-250、Cascade Microtech社より購入)を使用し、各試験片の10GHz下における信号損失を測定する。
表2に示すように、実施例1から13の液晶高分子膜における1つの表面のRz/Ryはいずれも0.30から0.62に制御されるため、この種の液晶高分子膜および各種低粗度の市販銅箔を圧接して形成される積層板(実施例1Aから13A)は、いずれも高い引き剥がし強さを示すことができる。表3の結果のように、実施例1Aから7Aの積層板の測定結果を例とすると、液晶高分子膜の1つの表面のRz/Ryを0.30から0.62に制御すると、実施例1Aから7Aの積層板の信号損失も-3.1dB以下に制御できる。
Claims (8)
- 相対する第1表面および第2表面を有し、
該第1表面における最大高さは0.5マイクロメートル以上1.8マイクロメートル以下であるとともに該第1表面における最大高さに対する十点平均粗さの比率は0.361から0.548であり、
前記十点平均粗さおよび前記最大高さは、いずれもJIS B 0601:1994の方法、定義に基づくことを特徴とする、
液晶高分子膜。 - 該第1表面の算術平均粗さは0.09マイクロメートル以下であることを特徴とする、請求項1に記載の液晶高分子膜。
- 該第1表面の算術平均粗さは0.02マイクロメートル以上0.08マイクロメートル以下であることを特徴とする、請求項1または2に記載の液晶高分子膜。
- 該第1表面の十点平均粗さは1.186マイクロメートル未満であることを特徴とする、請求項1~3のいずれか1項に記載の液晶高分子膜。
- 該第1表面の十点平均粗さは0.390マイクロメートル以上0.864マイクロメートル以下であることを特徴とする、請求項4に記載の液晶高分子膜。
- 該第2表面における最大高さに対する十点平均粗さの比率は0.30から0.62であることを特徴とする、請求項1~5のいずれか1項に記載の液晶高分子膜。
- 該第2表面における最大高さは2.0マイクロメートル以下であることを特徴とする、請求項1~6のいずれか1項に記載の液晶高分子膜。
- 該第2表面の算術平均粗さは0.09マイクロメートル以下であることを特徴とする、請求項1~7のいずれか1項に記載の液晶高分子膜。
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JP6804673B1 (ja) | 2020-12-23 |
TWI697549B (zh) | 2020-07-01 |
JP2021098842A (ja) | 2021-07-01 |
US20210189075A1 (en) | 2021-06-24 |
CN113096900A (zh) | 2021-07-09 |
US20220032575A1 (en) | 2022-02-03 |
TW202124678A (zh) | 2021-07-01 |
JP2021098832A (ja) | 2021-07-01 |
KR102197515B9 (ko) | 2022-10-11 |
KR102197515B1 (ko) | 2021-01-04 |
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