JP7372814B2 - フォトマスク、フォトマスクの製造方法、および、電子デバイスの製造方法 - Google Patents

フォトマスク、フォトマスクの製造方法、および、電子デバイスの製造方法 Download PDF

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Publication number
JP7372814B2
JP7372814B2 JP2019192028A JP2019192028A JP7372814B2 JP 7372814 B2 JP7372814 B2 JP 7372814B2 JP 2019192028 A JP2019192028 A JP 2019192028A JP 2019192028 A JP2019192028 A JP 2019192028A JP 7372814 B2 JP7372814 B2 JP 7372814B2
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Japan
Prior art keywords
photomask
transmission control
pattern
exposure
light
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JP2019192028A
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Japanese (ja)
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JP2020067660A (ja
Inventor
周平 小林
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Hoya Corp
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Hoya Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Toxicology (AREA)
  • Public Health (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2019192028A 2018-10-22 2019-10-21 フォトマスク、フォトマスクの製造方法、および、電子デバイスの製造方法 Active JP7372814B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018198734 2018-10-22
JP2018198734 2018-10-22

Publications (2)

Publication Number Publication Date
JP2020067660A JP2020067660A (ja) 2020-04-30
JP7372814B2 true JP7372814B2 (ja) 2023-11-01

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JP2019192028A Active JP7372814B2 (ja) 2018-10-22 2019-10-21 フォトマスク、フォトマスクの製造方法、および、電子デバイスの製造方法

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Country Link
JP (1) JP7372814B2 (zh)
KR (1) KR20200045413A (zh)
CN (1) CN111077727B (zh)
TW (1) TWI712851B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI731685B (zh) * 2020-05-19 2021-06-21 友達光電股份有限公司 顯示面板及其黑矩陣層的形成方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012058324A (ja) 2010-09-06 2012-03-22 Nsk Technology Co Ltd 近接露光用マスク及び近接露光装置ならびに近接露光方法
JP2013246340A (ja) 2012-05-28 2013-12-09 Toppan Printing Co Ltd フォトマスクとその製造方法、およびパターン露光方法
WO2014111983A1 (ja) 2013-01-21 2014-07-24 パナソニック株式会社 フォトマスク及びそれを用いたパターン形成方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW480367B (en) * 2000-02-16 2002-03-21 Shinetsu Chemical Co Photomask blank, photomask and method of manufacture
JP2006292840A (ja) * 2005-04-06 2006-10-26 Advanced Lcd Technologies Development Center Co Ltd 露光方法及びハーフトーン型位相シフトマスク
JP5588633B2 (ja) * 2009-06-30 2014-09-10 アルバック成膜株式会社 位相シフトマスクの製造方法、フラットパネルディスプレイの製造方法及び位相シフトマスク
CN108267927B (zh) * 2011-12-21 2021-08-24 大日本印刷株式会社 大型相移掩膜
JP6139826B2 (ja) * 2012-05-02 2017-05-31 Hoya株式会社 フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法
JP6093117B2 (ja) * 2012-06-01 2017-03-08 Hoya株式会社 フォトマスク、フォトマスクの製造方法及びパターンの転写方法
JP6089604B2 (ja) 2012-11-06 2017-03-08 大日本印刷株式会社 位相シフトマスクの製造方法
JP2014191323A (ja) * 2013-03-28 2014-10-06 Toppan Printing Co Ltd プロキシミティ露光用フォトマスクおよびそれを用いるパターン露光方法
JP6522277B2 (ja) * 2013-11-19 2019-05-29 Hoya株式会社 フォトマスク、フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法
JP5668168B1 (ja) * 2014-06-17 2015-02-12 株式会社エスケーエレクトロニクス プロキシミティ露光用フォトマスク
JP6726553B2 (ja) * 2015-09-26 2020-07-22 Hoya株式会社 フォトマスクの製造方法、及び表示装置の製造方法
JP6500791B2 (ja) * 2016-01-22 2019-04-17 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク及びその製造方法
JP6557638B2 (ja) 2016-07-06 2019-08-07 株式会社エスケーエレクトロニクス ハーフトーンマスクおよびハーフトーンマスクブランクス
JP6716427B2 (ja) * 2016-11-07 2020-07-01 Hoya株式会社 フォトマスク、近接露光用フォトマスクの製造方法、及び、表示装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012058324A (ja) 2010-09-06 2012-03-22 Nsk Technology Co Ltd 近接露光用マスク及び近接露光装置ならびに近接露光方法
JP2013246340A (ja) 2012-05-28 2013-12-09 Toppan Printing Co Ltd フォトマスクとその製造方法、およびパターン露光方法
WO2014111983A1 (ja) 2013-01-21 2014-07-24 パナソニック株式会社 フォトマスク及びそれを用いたパターン形成方法

Also Published As

Publication number Publication date
TWI712851B (zh) 2020-12-11
KR20200045413A (ko) 2020-05-04
CN111077727A (zh) 2020-04-28
CN111077727B (zh) 2024-06-11
TW202022482A (zh) 2020-06-16
JP2020067660A (ja) 2020-04-30

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