JP7369399B2 - Method for manufacturing a vibration element, method for manufacturing a vibration power generation element, vibration element, and vibration power generation element - Google Patents

Description

The present invention relates to a method for manufacturing a vibration element, a method for manufacturing a vibration power generation element, a vibration element, and a vibration power generation element.

As one of the energy harvesting techniques for harvesting energy from environmental vibrations, a method of generating power from environmental vibrations using a vibration power generation element, which is a MEMS (Micro Electro Mechanical Systems) vibration element, is known.
In a vibration power generation element, for example, a movable electrode is supported by an elastic support member such as a cantilever, and power is generated by the movable electrode vibrating relative to a fixed electrode.
In order to improve the power generation efficiency of the vibration power generation element, it is desirable to have the movable electrode and the fixed electrode closely facing each other. For this reason, a manufacturing method is used in which the movable electrode and the fixed electrode are integrally formed from the same substrate by etching.
Further, each of the movable electrode and the fixed electrode needs to have appropriate conductivity, and the movable electrode and the fixed electrode need to be electrically insulated (see Patent Document 1).

International Publication No. 2019/031565

In Patent Document 1, in order to ensure electrical insulation between a movable electrode and a fixed electrode, a predetermined distance from the surface of an SOI (Silicon On Insulator) substrate or an intrinsic silicon substrate with low conductivity is used as a substrate. A substrate is used in which a P-type or N-type conductive layer is formed by doping only in a thick region.

However, SOI substrates are expensive, and there is a problem in that the use of SOI substrates increases the manufacturing cost of vibration power generation elements and the like. Further, even if a conductive layer is formed on the surface of an intrinsic silicon substrate by doping, the thickness of the conductive layer is thin, and therefore it is difficult to obtain a sufficiently low electrical resistance. In addition, in order to form a sufficiently thick conductive layer by doping, it is necessary to increase the acceleration voltage of the implanted ions and increase the processing time, which also raises the problem of increased manufacturing costs.

According to a first aspect, a method for manufacturing a vibration element includes preparing a conductive substrate, forming a gap in a first region of the substrate, and applying an insulating member to the gap formed in the first region. forming an insulating portion by filling the substrate; removing a second region in contact with the first region from the substrate to form a first supporting portion mechanically connected to the insulating portion; a second support part that is electrically connected to the first support part and insulated from the first support part; a first electrode supported by the first support part; and a second electrode supported by the second support part. and forming.
According to a second aspect, a method for manufacturing a vibration power generation element includes the method for manufacturing a vibration power generation element according to the first aspect, and in which one of the first electrode and the second electrode faces the other electrode. forming an electret on the portion.
According to the third aspect, the vibrating element includes an insulating section, a conductive first support section mechanically connected to the insulating section, and a conductive first support section mechanically connected to the insulating section and the first support section mechanically connected to the insulating section. a conductive second support part insulated from the second support part, a first electrode supported by the first support part, and a second electrode supported by the second support part; The first electrode and the second electrode are arranged facing each other with a distance of 10 μm or less.
According to a fourth aspect, the vibration power generation element includes the vibration element according to the third aspect, and an electret is formed in a portion of one of the first electrode and the second electrode facing the other electrode. has been done.

According to the present invention, a vibration element and a vibration power generation element can be manufactured at low cost.
Furthermore, the in-plane insulation of the conductive substrate can be achieved using an inexpensive method.

FIG. 1 is a diagram illustrating a first embodiment of a method for manufacturing a vibration element and a vibration power generation element. FIG. 2 is a diagram illustrating a first embodiment of the method for manufacturing a vibration element and a vibration power generation element following FIG. 1 . 3 is a diagram illustrating a first embodiment of the method for manufacturing a vibration element and a vibration power generation element following FIG. 2. FIG. FIG. 4(a) is a diagram illustrating a first embodiment of the method for manufacturing a vibration element and a vibration power generation element following FIG. 2. FIG. 4(b) and FIG. 4(c) are diagrams showing a vibration element and a vibration power generation element manufactured by the manufacturing method of the first embodiment. FIG. 5A is a diagram illustrating a second embodiment of a method for manufacturing a vibration element and a vibration power generation element. FIG. 5(b) is a diagram showing a vibration element and a vibration power generation element manufactured by the manufacturing method of the second embodiment. FIG. 6A is a diagram illustrating a third embodiment of a method for manufacturing a vibration element and a vibration power generation element. FIG. 6(b) is a diagram showing a vibration element and a vibration power generation element manufactured by the manufacturing method of the third embodiment. FIG. 7A is a diagram illustrating a second modification of the method for manufacturing a vibration element and a vibration power generation element. FIG. 7(b) is a diagram illustrating a third modification of the method for manufacturing a vibration element and a vibration power generation element. FIG. 7 is a diagram illustrating a fourth modification of the method for manufacturing a vibration element and a vibration power generation element. FIG. 7 is a diagram illustrating a sixth modification of the method for manufacturing a vibration element and a vibration power generation element.

(First embodiment of the method for manufacturing a vibration power generation element)
Hereinafter, a first embodiment of a method for manufacturing the vibration power generation element 50 will be described with reference to FIGS. 1 to 4. The X direction, Y direction, and Z direction indicated by arrows in FIG. 1(a) to FIG. 4(c) and each figure after FIG. 5 indicate the same direction, and the direction pointed by the arrow is the + direction. shall be. The X direction, the Y direction, and the Z direction are directions perpendicular to each other, and the X direction and the Y direction are directions parallel to the surface of the substrate 10, which will be described later.

(Step 1)
As shown in FIG. 1(a), a conductive substrate 10 such as a silicon wafer, which is a substantially circular silicon substrate, is prepared. When the substrate 10 is a silicon substrate, a silicon substrate having N-type or P-type conductivity by containing impurities therein is prepared. The thickness of the substrate 10 in the Z direction is, for example, about 10 μm to 800 μm.
The volume resistivity of the conductive substrate 10 is, for example, 100 [Ω·cm] or less.

(Step 2)
As shown in FIG. 1A, voids 14, which are through holes, are formed in the two first regions 11 of the substrate 10, respectively.
FIG. 1(b) is a diagram illustrating the process of forming the void 14, and shows an XZ cross section of the substrate 10 along the line AA passing through one first region 11 shown in FIG. 1(a) from the −Y direction. This is the view.
The width of the first region 11 in the X direction is, for example, about 10 μm to about 10 mm. The width of the first region 11 in the Y direction is, for example, about 0.5 mm to 10 mm.
Further, the width of the first region 11 in the Z direction is equal to the thickness of the substrate 10.

In forming the void 14, a resist 12a is first formed on the entire surface of the +Z side (hereinafter referred to as "front surface") of the substrate 10. Then, the resist 12a formed on the first region 11 is removed, and an opening 13 is formed. The resist 12a is removed by, for example, a photolithography process including exposure and development.
Then, by etching the substrate 10 using the resist 12a as an etching mask, a gap 14 penetrating the substrate 10 is formed in the first region 11, as shown in FIG. 1(c). After that, the resist 12a is removed.

(Step 3)
A gap 14 formed in the first region 11 is filled with an insulating member to form an insulating portion 15 in the first region 11 .
2(a) and 2(b) are diagrams illustrating a method for forming the insulating portion 15, and are XZ diagrams showing the vicinity of the first region 11 of the substrate 10 on a larger scale than in FIG. 1(c). FIG.

As shown in FIG. 2A, first, the voids 14 formed in the first region 11 are filled with powdered silicon 16 having a grain size of about 0.5 μm to 2 μm. Then, for several hours in a steam atmosphere at a temperature of about 800°C to 1200°C, for example about 950°C, at least the vicinity of the surface of the powdered silicon 16 is thermally oxidized and fused together to form an insulating silicon dioxide (silica glass). ) into an integral insulating part 15 including:
The volume resistivity of the insulating portion 15 is, for example, 1 [MΩ·cm] or more.

Since the volume of the powdered silicon 16 expands due to oxidation, the inside of the gap 14 can be filled with the insulating part 15, and the volume-expanded insulating part 15 pushes the side walls 101 and 102 of the substrate 10, and as a result, the insulating part 15 are in close contact with the side walls 101 and 102.
If the substrate 10 is a substrate on which an oxide film is formed by thermal oxidation, such as a silicon substrate, the side walls 101 and 102 of the substrate 10 facing the gap 14 are also oxidized in the above-mentioned thermal oxidation. Since it is fused to the oxide of the powdered silicon 16 described above, the adhesion between the insulating portion 15 and the side walls 101 and 102 of the substrate 10 can be further improved.

FIG. 2C shows a diagram of the substrate 10 in which the insulating portions 15 are formed inside the two first regions 11, viewed from the +Z direction. The above-mentioned FIG. 2(b) is a diagram of the XZ cross section of the substrate 10 taken along the line BB shown in FIG. 2(c), viewed from the -Y direction.

(Step 4)
As shown in FIG. 3A, a resist 12b is formed on the entire front surface of the substrate 10. Then, by a photolithography process including exposure and development, for example, the resist 12b formed in the internal region 17a that is in contact with both the two first regions 11 in the XY plane is removed.
Note that the insulating portion 15 formed in the first region 11 is not shown in FIG. 3(a) because it is covered with the resist 12b. However, in order to show the positional relationship between the internal region 17a and the first region 11, the first region 11 is shown by a broken line in FIG. 3(a).

The shape of the internal region 17a is determined according to the shape of the members constituting the vibration power generation element 50 to be manufactured, as will be described later. However, as described above, the internal region 17a is in contact with each of the two first regions 11.

(Step 5)
The internal region 17a of the substrate 10 is removed by etching the substrate 10 using the resist 12b formed on the front surface of the substrate 10 as an etching mask. After that, the resist 12b is removed. FIG. 3(b) shows the substrate 10 with the internal region 17a and the resist 12b removed.

FIG. 4(a) is a diagram showing the substrate 10 in basically the same state as that shown in FIG. 3(b) described above. However, for ease of explanation, each part on the substrate 10 corresponding to each part constituting the completed vibration power generation element 50 shown in FIG. It is attached.

By removing the internal region 17a described above, the first electrode 19, second electrode 23, etc. in the completed vibration power generation element 50 are formed in a form that remains on the substrate 10.
Both the first electrode 19 and the second electrode 23 have a comb-like shape in the XY plane, and both have a plurality of comb teeth. The comb tooth portions are interlocked with each other. That is, each end surface of each comb-teeth portion of the second electrode 23 in the ±Y direction is arranged to face the end surface of each comb-teeth portion of the first electrode 19 in the ±Y direction.
Note that in the above-described etching, a portion of the insulating portion 15 may also be removed from the substrate 10 as the internal region 17a. In this case, the first region is a region of the insulating portion 15 that remains on the substrate 10 after etching the internal region 17a.

(Step 6)
The electret 24 is formed by performing a known charging process (for example, the charging process described in JP 2014-049557A) on the end faces of the second electrode 23 in the +Y direction and the -Y direction on the substrate 10. . That is, the electret 24 is formed in a portion of each comb tooth of the second electrode 23 that faces each comb tooth of the first electrode 19 .

Note that the electret 24 is not placed in a portion of each comb tooth of the second electrode 23 that faces each comb tooth of the first electrode 19 , but on each comb of the second electrode 23 of each comb tooth of the first electrode 19 . It may be formed on the part facing the teeth.
In addition, when the substrate 10 is not a silicon substrate, after forming a silicon or polysilicon film on the portion of the surface of the first electrode 19 or the second electrode 23 where the electret 24 is to be formed, the above-mentioned known charging method may be used. An electret 24 is formed by the treatment.

(Step 7)
From the substrate 10, the external region 17b which is the region on the -X side of the cutting line SL1, the +X side of the cutting line SL2, the +Y side of the cutting line SL3, and the -Y side of the cutting line SL4 shown in FIG. Remove. The external region 17b as a whole is in contact with each of the two first regions 11.
Note that the cutting line SL3 may be a line that is on the −Y side rather than the +Y side end of the insulating portion 15 and passes through the inside of the insulating portion 15. Further, the cutting line SL4 may be a line that is on the +Y side of the -Y side end of the insulating section 15 and passes through the inside of the insulating section 15. In these cases, a portion of the insulating portion 15 is also removed from the substrate 10 along with the external region 17b. Note that in these cases, the first region is a region of the insulating portion 15 that remains on the substrate 10 after the above-mentioned removal.
By removing the external region 17b, the vibration power generating element 50 is completed.

The external region 17b may be removed by cutting the substrate 10 with a dicing saw along the cutting lines SL1 to SL4, or may be removed by etching using lithography including etching in the same manner as the internal region 17a described above. good. When the external region 17b is removed from the substrate 10 by lithography including etching, it may be removed at the same time as the internal region 17a described above.

In this specification, a region of the substrate 10 that is in contact with the first region 11 and that is removed from the substrate 10 in the manufacturing process is referred to as a "second region" 17.
Both the inner region 17a and the outer region 17b are regions that are in contact with each of the two first regions 11, and are regions that are removed from the substrate 10. Therefore, both the inner region 17a and the outer region 17b are second regions. In addition, the inner region 17a and the outer region 17b are also referred to as the second region 17, either together or individually.

(First embodiment of vibration power generation element)
FIG. 4(b) is a diagram of the vibration power generation element 50 completed through the above steps, viewed from the +Z direction. The vibration power generation element 50 includes two insulating parts 15 , a conductive first support part 18 which is mechanically connected to the insulating part 15 , and a first conductive support part 18 which is mechanically connected to the insulating part 15 and is connected to the insulating part 15 . The first support part 18 includes a conductive second support part 22 that is insulated from the first support part 18 . Here, the second support section 22 includes a support frame 20 that is mechanically connected to the insulating section 15 and an electrode support section 21 that is connected to the support frame 20.

The vibration power generation element 50 further includes a first electrode 19 supported by the first support part 18 and a second electrode 23 supported by the electrode support part 21 of the second support part 22. One of the first electrode 19 and the second electrode 23 is provided with an electret 24 in a portion facing the other.

Note that the number of comb teeth of each of the first electrode 19 and the second electrode 23 is not limited to that shown in FIG. 4(b) and the like.
Further, the shape of the first electrode 19 and the second electrode 23 in the XY plane is not limited to the above-mentioned comb-like shape. For example, each of the two electrodes may have an end face parallel to the YZ plane, and the two end faces may be arranged to face each other in the X direction, which is the in-plane direction of the substrate 10.

The first support portion 18, the second support portion 22 (the support frame 20 and the electrode support portion 21), the first electrode 19, and the second electrode 23 are connected from the substrate 10 to the second region 17 (internal region 17a and external region 17a). It is formed by removing the region 17b). Therefore, by setting the shape of the second region 17 to a desired shape, the first support portion 18, the second support portion 22 (the support frame 20 and the electrode support portion 21), the first electrode 19, and the second electrode 23 can be Each shape in the XY plane can be made into a desired shape.

Further, the first electrode 19 and the second electrode 23 are held by the first support part 18 and the second support part 22, respectively, and the first support part 18 and the second support part 22 are electrically connected to each other by the insulating part 15. Since they are insulated, the first electrode 19 and the second electrode 23 are electrically insulated.

When the vibration power generation element 50 vibrates with a vibration having a vibration component in the Z direction, this causes the electrode support part 21, which is long in the X direction, to vibrate in the Z direction using the support frame 20 as a fulcrum. Therefore, the second electrode 23 that is integrally held by the electrode support 21 vibrates in the Z direction relative to the first electrode 19 that is fixedly held with respect to the first support 18. do.

As a result, the length of the opposing portion OA1 between the first electrode 19 and the second electrode 23 in the Z direction changes, and therefore the area of the opposing portion OA1 changes. Due to the change in the area of the opposing portion OA1, the induced charge induced in the first electrode 19 (or the second electrode 23) facing the second electrode 23 (or the first electrode 19) on which the electret is formed changes, The voltage between the first electrode 19 and the second electrode 23 changes and an electromotive force is generated.

The distance D between the end surfaces of the comb-teeth portions of the first electrode 19 and the second electrode 23 that face each other in the Y direction is, for example, a distance of 10 μm or less. Further, the length in the X direction of the facing portion OA1 where the first electrode 19 and the second electrode 23 face each other in the Y direction is, for example, about 0.5 mm to 10 mm. The vibration power generating element 50 including the first electrode 19 and the second electrode 23 has a thickness in the Z direction of about 10 μm to 800 μm, for example, like the substrate 10 used.

In the first embodiment of the manufacturing method described above, the first electrode 19 and the second electrode 23 are formed at once by removing the second region 17 from one substrate 10 by lithography including etching. There is. As a result, the comb-like portions of the first electrode 19 and the second electrode 23 of the vibration power generation element 50 are maintained over a length of several mm in the X direction and a distance of 10 μm or less in the Y direction, resulting in high precision. It can be formed opposite to.

As a result, more induced charges can be generated in the second electrode 23 (or the first electrode 19) facing the first electrode 19 (or the second electrode 23) on which the electret is formed, and vibration power generation The power generation efficiency of the element 50 can be increased.
Note that, like the second electrode 23, the first electrode 19 may also be supported by the first support part 18 via an electrode support part (not shown).

Note that, as disclosed in Patent Document 1 mentioned above, at least a portion of the electrode support portion 21 may be locally etched to reduce its thickness. This reduces the rigidity of the electrode support part 21 and increases the amount of relative movement in the Z direction between the first electrode 19 and the second electrode 23 when the vibration power generation element 50 vibrates with vibration having a vibration component in the Z direction. Therefore, the power generation efficiency of the vibration power generation element 50 can be further improved.
When the first electrode 19 is supported by the first support part 18 via an electrode support part (not shown), the electrode support part (not shown) that directs the first electrode 19 is also locally supported in the same manner as above. Alternatively, etching may be performed to reduce the thickness.

Local etching of the electrode support portion 21 may be performed from the front surface of the substrate 10 or from the back surface (-Z side surface).
For example, the local etching of the electrode support portion 21 may be performed at any time from step 2 to step 6 in the first embodiment of the manufacturing method described above.

FIG. 4(c) is a side view of the vibration power generating element 50 shown in FIG. 4(b) as viewed from the -Y direction. In the first embodiment of the manufacturing method described above, the insulating part 15 is formed in the gap 14 (see FIG. 2(b) etc.) provided in the first region 11 of the substrate 10. Therefore, the upper surface of the first support part 18 (+Z side surface) and the upper surface of the second support part 22 are within the first plane PU, and the upper end part of the insulating part 15 (the end part on the +Z side) is closer to the first plane PU. is also located below (-Z side). The lower surface of the first support section 18 (-Z side) and the lower surface of the second support section 22 are within the second plane PD, and the lower end of the insulating section 15 (the end on the -Z side) is within the second plane PD. It is located above the PD (on the +Z side).

Therefore, the insulating part 15 does not protrude above (+Z side) and below (-Z side) from the first support part 18 and the second support part 22, is miniaturized in the Z direction, and has unnecessary It is possible to realize a vibration power generation element 50 that has no protrusions and is easy to handle.
Note that if the insulating part 15 may protrude from the first support part 18 and the second support part 22 in the +Z direction or the -Z direction, the insulating part 15 may extend beyond the first region 11 described above to the +Z side or the -Z direction. It may also be formed in an area protruding from the −Z side.

(First embodiment of a method for manufacturing a vibration element and a first embodiment of a vibration element)
Hereinafter, a first embodiment of a method for manufacturing a vibration element and a first embodiment of a vibration element will be described. However, the first embodiment of the method for manufacturing a vibration element has most of the same features as the first embodiment of the method for manufacturing the vibration power generation element described above. Further, the first embodiment of the vibration element has most of the same features as the first embodiment of the vibration power generation element described above. Therefore, only the differences will be described below.

In the first embodiment of the method for manufacturing a vibration element, unlike the first embodiment of the method for manufacturing a vibration power generation element described above, the formation of the electret in step 6 described above is not performed. However, the other steps are the same as in the first embodiment of the method for manufacturing the vibration power generation element described above. Therefore, in the vibration element of the first embodiment, the electret 24 is excluded from the vibration power generation element 50 of the first embodiment shown in FIGS. 4(b) and 4(c).

Conversely, it can be said that the vibration power generation element 50 of the first embodiment is one in which the electret 24 is formed on the surface of the first electrode 19 or the second electrode 23 of the vibration element of the first embodiment.
In the following, the vibration element of the first embodiment will also be described with reference numeral 50, similar to the vibration power generation element 50 of the first embodiment.

In the vibration element 50, similarly to the vibration power generation element 50 described above, when the vibration element 50 vibrates with a vibration having a vibration component in the Z direction, the positions of the second electrode 23 and the first electrode 19 in the Z direction become relative to each other. , and the area of the opposing portion OA1 between the first electrode 19 and the second electrode 23 changes. Therefore, the vibration element 50 can be used, for example, as a capacitance-type vibration detection element in which the capacitance between the first electrode 19 and the second electrode 23 changes depending on the vibration including the Z-direction component. I can do it. Since the distance in the Y direction between the first electrode 19 and the second electrode 23 is as small as 10 μm or less, a large capacitance can be formed between the first electrode 19 and the second electrode 23, resulting in high sensitivity. A vibration detection element can be realized.

(Second embodiment of the method for manufacturing a vibration power generation element)
Hereinafter, a second embodiment of a method for manufacturing a vibration power generation element will be described with reference to FIG. However, the second embodiment of the method for manufacturing a vibration power generation element has many configurations in common with the first embodiment of the method for manufacturing the vibration power generation element described above. Therefore, the differences will be mainly explained below, and common components will be given the same reference numerals and explanations will be omitted as appropriate.

In the second embodiment of the method for manufacturing a vibration power generation element, steps 1 to 3 described above are the same as in the first embodiment described above.
In the second embodiment, the shapes of the region from which the resist 12b is removed in step 4 described above and the region from which the substrate 10 is removed in step 5 are different from those of the first embodiment described above.

FIG. 5A is a diagram showing the shape of the internal region 17a formed in the substrate 10 after the above-described step 5 is completed in the second embodiment. Moreover, FIG. 5(b) is a diagram showing the vibration power generation element 50a after completion. Note that in FIG. 5(a), similar to FIG. 4(a) shown in the first embodiment, each part on the substrate 10 corresponding to each part constituting the vibration power generation element 50a after completion is shown. , are hatched and labeled respectively.

In the second embodiment, in the above-described steps 4 and 5, as shown in FIG. 5(a), in addition to the internal region 17a, the additional region 17c is also removed from the substrate 10. As a result, the electrode support portion 21b in the second embodiment is held at both ends in the Y direction by the support frame 20 via elastic support portions 21s narrow in the X direction. The second electrode 23 is supported by an electrode support portion 21b. For example, the supplementary region 17c is a region on the opposite side in the X direction from the internal region 17a when viewed from the electrode support section 21b and the elastic support section 21s.

In the second embodiment, the second support section 22a includes a support frame 20 mechanically connected to the insulating section 15, an elastic support section 21s connected to the support frame 20, and an electrode support section 21b. Contains.
Subsequently, similarly to the first embodiment, the electret 24 is formed on the first electrode 19 or the second electrode 23 in the above-mentioned step 6, and the external region 17b is removed from the substrate 10 in the above-mentioned step 7. By removing the external region 17b, the vibration power generating element 50a shown in FIG. 5(b) is completed.

Hereinafter, the inner region 17a in contact with the first region 11 and the outer region 17b in contact with the first region 11 will be collectively or individually referred to as a "main region" 17m. In the second embodiment, the second region 17 includes, in addition to the main region 17m, an auxiliary region 17c separated from the main region 17m.
In the second embodiment, in addition to the main region 17m, the ancillary region 17c is also removed from the substrate 10, so it is possible to form the second support portion 22a with a more complicated shape.

(Second embodiment of vibration power generation element)
In the vibration power generation element 50a of the second embodiment, the electrode support part 21b that supports the second electrode 23 is held by the support frame 20 at both ends in the Y direction via elastic support parts 21s narrow in the X direction. ing. Therefore, when the vibration power generating element 50a vibrates with a vibration having a vibration component in the X direction, the elastic support portion 21s deforms in the X direction, and the electrode support portion 21b vibrates in the X direction relative to the support frame 20. Therefore, the second electrode 23 that is integrally held on the electrode support part 21b is relatively fixed to the first electrode 19 that is fixedly and integrally held on the first support part 18. Vibrates in the X direction.

As a result, the length of the opposing portion OA2 between the first electrode 19 and the second electrode 23 in the X direction changes, and therefore the area of the opposing portion OA2 changes. Due to the change in the area of the opposing portion OA2, the induced charge induced in the second electrode 23 (or the first electrode 19) facing the first electrode 19 (or the second electrode 23) on which the electret is formed changes, The voltage between the first electrode 19 and the second electrode 23 changes and an electromotive force is generated.

Similar to the vibration power generation element 50 of the second embodiment described above, the distance D between the end faces of the comb teeth of the first electrode 19 and the second electrode 23 facing each other in the Y direction is, for example, a distance of 10 μm or less. be. Further, the length in the X direction of the facing portion OA2 where the first electrode 19 and the second electrode 23 face each other in the Y direction is, for example, about 3 mm to 10 mm. The vibration power generation element 50a including the first electrode 19 and the second electrode 23 has a thickness in the Z direction of, for example, about 10 μm to 800 μm, like the substrate 10 used.

Also in the second embodiment of the manufacturing method described above, the first electrode 19 and the second electrode 23 are formed at once by removing the second region 17 from one substrate 10 by lithography including etching. There is. As a result, the comb-like portions of the first electrode 19 and the second electrode 23 of the vibration power generation element 50a are maintained over a length of several mm in the X direction and a distance of 10 μm or less in the Y direction, resulting in high precision. It can be formed opposite to.

As a result, more induced charges can be generated in the second electrode 23 (or the first electrode 19) facing the first electrode 19 (or the second electrode 23) on which the electret is formed, and vibration power generation The power generation efficiency of the element 50a can be increased.

In the second embodiment as well, at least a portion of the elastic support portion 21s may be locally etched from the +Z direction or the −Z direction to reduce its thickness. This further reduces the rigidity of the elastic support portion 21s, and reduces the amount of relative movement between the first electrode 19 and the second electrode 23 in the X direction when the vibration power generation element 50 vibrates with vibration having a vibration component in the X direction. The power generation efficiency of the vibration power generation element 50a can be further improved.
For example, the local etching of the electrode support portion 21 may be performed at any time from step 2 to step 6 in the second embodiment of the manufacturing method described above.
Note that the length (thickness) of the elastic support section 21s in the X direction may be changed by changing the shape of the main region 17m, thereby changing the rigidity of the elastic support section 21s.

(Second embodiment of method for manufacturing a vibration element and second embodiment of vibration element)
The second embodiment of the method for manufacturing a vibration element is similar to the first embodiment of the method for manufacturing a vibration element described above, in which the formation of the electret 24 in step 6 is omitted in the second embodiment of the method for manufacturing a vibration power generation element. This is what I did.
Further, in the second embodiment of the vibration element, the electret 24 is excluded from the vibration power generation element 50a of the second embodiment shown in FIG. 5(b).

(Third embodiment of method for manufacturing vibration power generation element)
Hereinafter, a third embodiment of a method for manufacturing a vibration power generation element will be described with reference to FIG. However, the second embodiment of the method for manufacturing a vibration power generation element has many configurations in common with the first embodiment or the second embodiment of the method for manufacturing a vibration power generation element described above. Therefore, the differences will be mainly explained below, and common components will be given the same reference numerals and explanations will be omitted as appropriate.

FIG. 6(a) is a diagram showing the shapes of the first region 11 (11a to 11d), internal region 17a (17L, 17R), etc. formed on the substrate 10 after the above-described step 5 in the third embodiment. It is. Moreover, FIG.6(b) is a figure which shows the vibration power generation element 50b after completion in 3rd Embodiment. Note that in FIG. 6(a), similar to FIG. 4(a) shown in the first embodiment, each part on the substrate 10 corresponding to each part constituting the vibration power generation element 50b after completion is shown. , are hatched and labeled respectively.

In the third embodiment of the method for manufacturing a vibration power generation element, in step 2 described above, voids 14, which are through holes, are formed in the four first regions 11 (11a to 11d) shown in FIG. 6(a) of the substrate 10. (not shown in FIG. 6(a)) are formed respectively. Then, the four first regions 11a to 11d in which the voids 14 were formed in step 3 described above are filled with an insulating member to form insulating parts 15a to 15d.

Thereafter, in step 4, the resist 12b is removed from the parts of the substrate 10 corresponding to the two separate inner regions 17a (17L, 17R) shown in FIG. Remove. As a result, the two first support parts 18 (18a, 18b), the two first electrodes 19 (19a, 19b), the one second support part 22a, and the two second electrodes 23 (23a, 23b), It is formed remaining on the substrate 10. The second support part 22a includes a support frame 20 that is mechanically connected to any two of the insulating parts 15a to 15d, and an elastic support part that is connected to the support frame 20, as in the second embodiment described above. 21s and an electrode support part 21b.

Of the two internal regions 17a, the internal region 17L located on the -X side is located on the -X side of the four first regions 11a to 11d. It is in contact with regions 11a and 11b. The internal region 17R located on the +X side of the electrode support portion 21b is the two first regions 11c and 11d located on the +X side of the electrode support portion 21b among the four first regions 11a to 11d. It is in contact with

By removing the internal region 17L, both the first electrode 19a and the second electrode 23a, which are arranged on the -X side of the electrode support part 21b, have a comb-like shape, and the width of the electrodes in the ±Y direction is reduced. The end faces are arranged close to each other. By removing the other internal region 17R, both the first electrode 19b and the second electrode 23b, which are arranged on the +X side of the electrode support part 21b, have a comb-teeth shape, and both electrodes are arranged in the ±Y direction. are formed such that their end faces are disposed close to each other.

Subsequently, similarly to the second embodiment, the electret 24 is formed on the first electrodes 19a, 19b or the second electrodes 23a, 23b in the above-mentioned step 6, and the external region 17b is removed from the substrate 10 in the above-mentioned step 7. do. By removing the external region 17b, the vibration power generating element 50b shown in FIG. 6(b) is completed.

Also in the third embodiment, the external region 17b is a region in contact with the four first regions 11a to 11d.
Also in the third embodiment, the distance between the first electrode 19a and the second electrode 23a and the first electrode 19b and the second electrode 23b in the Y direction, the length of the opposing portion in the X direction, and the length of the substrate 10 are also determined. The thickness is the same as each value in the second embodiment described above.

In the third embodiment, two of the vibration power generation elements 50a of the second embodiment described above are inverted in the X direction, and the second support part 22a is shared. It can also be said that they are formed side by side.

(Third embodiment of vibration power generation element)
Also in the vibration power generation element 50b of the third embodiment, when the vibration power generation element 50b vibrates with a vibration having a vibration component in the X direction, the electrode support part 21b supports It vibrates in the X direction relative to the frame 20. Therefore, the second electrodes 23a and 23b, which are integrally held by the electrode support part 21b, are fixedly and integrally held by the first electrode 19a, which is held fixedly and integrally with respect to each of the first support parts 18a and 18b. , 19b, respectively, vibrate in the X direction relative to each other.

Therefore, similarly to the vibration power generation element 50a of the second embodiment described above, the voltage between the first electrode 19a and the second electrode 23a and the voltage between the first electrode 19b and the second electrode 23b change. An electromotive force is generated.
As an example, when the electrode support portion 21b swings in the +X direction, the area of the opposing portion between the first electrode 19b and the second electrode 23b increases, and the area of the opposing portion between the first electrode 19a and the second electrode 23a increases. The area of will decrease. Therefore, when the potentials of the second electrodes 23a and 23b are set as a reference (for example, 0V), voltages with opposite signs are generated in the two first electrodes 19a and 19b, respectively.

The vibration power generation element 50b of the third embodiment has two of the vibration power generation elements 50a of the second embodiment described above, one of which is inverted in the X direction, and the second support part 22a is shared. It can also be said that two pieces are arranged in the X direction.

(Third embodiment of method for manufacturing a vibration element and third embodiment of vibration element)
The third embodiment of the method for manufacturing a vibration element is similar to the first embodiment of the method for manufacturing a vibration element described above, in which the formation of the electret 24 in step 6 is omitted in the third embodiment of the method for manufacturing a vibration power generation element. This is what I did.
Further, in the third embodiment of the vibration element, the electret 24 is excluded from the vibration power generation element 50b of the third embodiment shown in FIG. 6(b).

(Modified example 1 of manufacturing method)
Hereinafter, a first modification of each embodiment of the above-described vibration power generation element or vibration element manufacturing method will be described.
In Modification 1, the thermal oxidation of the powdered silicon 16 in Step 3 of each embodiment of the manufacturing method described above is performed using vapor of an aqueous solution containing an alkali metal such as K (potassium) or Na (sodium), that is, water vapor containing an alkali metal. Do it in an atmosphere. Specifically, water vapor containing an alkali metal, obtained by evaporating or bubbling an aqueous solution containing an alkali metal hydroxide such as KOH, is supplied to the inside of a furnace that performs thermal oxidation, for example.

In Modification 1, an alkali metal is mixed into the quartz glass formed at least near the surface of the powdered silicon 16, and the melting point and softening point of the quartz glass are lowered. Therefore, the fusion properties between the particles of the powdered silicon 16 constituting the insulating portion 15 and the adhesion with the side walls 101 and 102 can be further improved.
In Modification 1 of the manufacturing method as well, each step other than the thermal oxidation in Step 3 is the same as any of the embodiments of the manufacturing method described above, so a description thereof will be omitted.

(Modified example 2 of manufacturing method)
Hereinafter, with reference to FIG. 7(a), a second modification of each embodiment of the above-described vibration power generation element or vibration element manufacturing method will be described. In modification 2 of the manufacturing method, in step 3 of each embodiment of the manufacturing method described above, the void 14 formed in the first region 11 is further filled with powdered glass 26 in addition to the powdered silicon 16 described above. . The powder glass 26 is a powdered glass with a particle size of about 0.5 μm to 2 μm, and in addition to silicon oxide, the above-mentioned alkali metals, alkaline earth metals such as Ca (calcium) or Ba (barium), Contains at least one of a Group 13 element such as B (boron) or a Group 15 element such as P (phosphorus).

After filling the void 14 with powdered silicon 16 and powdered glass 26, the powdered silicon 16 is thermally oxidized to form the insulating portion 15 in the same manner as in step 3 above. The melting or softening point of powdered glass 26 is lower than that of quartz glass. Therefore, in Modification 2, the fusion properties between the particles constituting the insulating part 15 and the adhesion with the side walls 101 and 102 can be further improved compared to the case where only powdered silicon 16 is filled.
Note that the void 14 formed in the first region 11 may be filled with only the powdered glass 26 without using the powdered silicon 16.

Also in Modification 1 of the manufacturing method, each step other than Step 3 is the same as any of the embodiments of the manufacturing method described above, so a description thereof will be omitted.
Note that in both Modification 1 and Modification 2 of the manufacturing method described above, the main component of the insulating portion 15 is silicon oxide, which is the same as in any of the embodiments described above.

(Variation 3 of manufacturing method)
Hereinafter, with reference to FIG. 7(b), a third modification of each embodiment of the above-described vibration power generation element or vibration element manufacturing method will be described. Modification 3 of the manufacturing method is different from each embodiment of the manufacturing method described above and the method of forming the void 14 in Step 2 of each modification.

FIG. 7B is a diagram of the substrate 10 in the vicinity of the first region 11 in which the void 14 and the additional void 14a are formed, viewed from the +Z direction. In Modified Example 3, when forming the void 14 in the substrate 10 in Step 2, an additional void is formed around the void 14, particularly at both ends in the X direction, which is an uneven structure that increases the surface area of the side walls 101 and 102 described above. 14a are combined to form.

Specifically, first in step 2, the resist 12a formed on the first region 11 including the void 14 and the additional void 14a shown in FIG. 7(b) is removed. Then, by etching the substrate 10 using the remaining resist 12a as an etching mask, a void 14 and an additional void 14a having the shape shown in FIG. 7(b) are formed. The three-dimensional shape of the formed void 14 and additional void 14a is such that the cross-sectional shape in the XY plane shown in FIG. 7(b) extends in the Z direction.

In step 3, the powdered silicon 16 and the like filled into the void 14 are also filled into the additional void 14a. Then, in step 4, the powdered silicon 16 is thermally oxidized to become quartz glass and expands in volume, and the additional void 14a is filled with the insulating portion 15 containing the above-mentioned quartz glass.
Therefore, in the manufacturing method of Modified Example 3, the adhesion between the insulating portion 15 and the side walls 101 and 102, that is, the substrate 10, can be further improved due to the so-called anchor effect.

The diameter of the plurality of additional gaps 14a formed in each of the side walls 101 and 102 is, for example, about 10 μm to 200 μm, and the interval between them in the Y direction is about 2 to 5 times the above-mentioned diameter.

Also in the third modification of the manufacturing method, except for filling the additional void 14a with the insulating portion 15 in the above-mentioned steps 2 and 3, the other steps are the same as in each embodiment of the manufacturing method described above, and any of the modified examples, so a description thereof will be omitted.

(Variation 4 of manufacturing method)
Hereinafter, with reference to FIG. 8, a fourth modification of each embodiment of the above-described vibration power generation element or vibration element manufacturing method will be described. Modified example 4 of the manufacturing method is different from each of the embodiments and modified examples of the manufacturing method described above in the method of forming the void 14 in step 2 of the manufacturing method described above.

8(a) to 8(d) are XZ cross-sectional views showing the vicinity of the first region 11 of the substrate 10, similar to FIGS. 2(a) and 2(b) described above.
In modification example 4, as shown in FIG. 8(a), in the step 2 described above, a gap 14 is formed in the first region 11 not through a through hole but up to the terminal surface RS, which is the XY plane indicated by a broken line. Form as a non-through hole. In Modification 4, the width of the first region 11 in the Z direction is the width from the front surface of the substrate 10 to the end surface RS.

Thereafter, in step 3 described above, as shown in FIG. 8(b), the void 14, which is a non-through hole, is filled with powdered silicon 16 or the like. Then, the powdered silicon 16 and the like in the gap 14 are thermally oxidized and fused to form an insulating part 15 in the gap 14, as shown in FIG. 8(c).
After forming the insulating portion 15, the back surface (-Z side surface) of the substrate 10 is ground, polished, or etched to remove the back surface of the substrate 10 to the position of the termination surface RS.

FIG. 8(d) is an XZ cross-sectional view showing the vicinity of the first region 11 of the substrate 10 in a state where removal of the back surface up to the termination surface RS shown in FIG. 8(c) etc. has been completed. Also in Modification 4, the insulating portion 15 can be formed in the first region of the substrate 10, similar to the state shown in FIG. 2(b).
Note that the above-described grinding of the back side of the substrate 10 and the like may be performed in any of the steps from step 4 to step 7 described above, and does not necessarily need to be performed immediately after the formation of the insulating portion 15.

The removed portion RP removed from the back side of the substrate 10 by the above-mentioned grinding or the like is in contact with the first region 11 in which the insulating portion 15 is formed, and is a region removed from the substrate 10 in the manufacturing process. Therefore, the removed portion RP is included in the second region 17, together with the inner region 17a and the outer region 17b.

Note that in each of the embodiments and Modifications 1 to 3 of the manufacturing method described above, the front surface or the back surface of the substrate 10 is ground, polished, or etched in any of the steps 2 to 6. In this way, the thickness of the substrate 10 may be reduced.
In each of the embodiments and modifications 1 to 4 of the manufacturing method described above, the material to be filled into the void 14 may be powder if it is a material that forms the integral insulating portion 15 by heat treatment or oxidation treatment. Any material other than silicon 16 may be used. For example, aluminum powder may be used.

(Variation example 5 of manufacturing method)
In each embodiment and each modification of the manufacturing method described above, the insulating portion 15 is formed by filling the void 14 formed in the substrate 10 with powdered silicon 16 or the like and heating the powdered silicon 16 or the like. did. In modification 5 of the manufacturing method, instead of this, the insulating portion 15 is formed by filling the void 14 with a liquid or gel organic silane compound such as tetraethoxysilane and heating it.

(Variation 6 of manufacturing method)
In each embodiment and each modification of the above-described manufacturing method, the shape in the XY plane of one first region 11 that forms the void 14 and the insulating part 15 in the above-mentioned steps 2 and 3 is approximately rectangular. And so. In contrast, in Modification 6, the shape of the first region 11 in the XY plane is a shape other than a rectangle.

FIG. 9 is a diagram showing the shapes of the first region 11 and the void 14 in the XY plane in Modification 6. The first region 11 in Modified Example 6 is a region 10R on the +X side of the first region 11 on the substrate 10 and a region 10L on the −X side of the first region 11 on the substrate 10, which are removed from the substrate 10. These are areas that are separated so that they interlock with each other.

The region 10R is, for example, a region surrounded by the dotted line shown in FIG. 9 and the first region 11, and its boundary in the +X direction may be at any position on the +X side of the first region 11. The region 10L is, for example, a region surrounded by the dashed line shown in FIG. 9 and the first region 11, and its boundary in the −X direction may be at any position on the −X side of the first region 11. The range of the region 10R and the region 10L in the Y direction is equal to the range of the first region 11 in the Y direction.

The widths Wx and Wy of each portion of the first region 11 in Modification 6 may be, for example, about 10 μm to about 10 mm, similarly to each of the above-described embodiments and modifications.
Also, in Modification 6, similarly to Modification 3 described above, the void 14 has a structure around the void 14 that increases the surface area of the side surface (side wall) of the substrate 10 in contact with the void 14, as shown in FIG. It may also include an uneven structure 14a.

Also in the sixth modification, in step 3, the first region 11 is filled with an insulating member to form the insulating portion 15. The steps after step 4 are the same as in each of the above-described embodiments and modifications.
In Modification 6, the first region 11 has a shape that separates the region 10R and the region 10L in the substrate 10 so as to mesh with each other, so that the insulating portion is smaller than the case where the first region 11 has a simple rectangular shape. The contact area between 15 and the surrounding substrate 10 increases. Further, due to the volumetric expansion due to the above-mentioned oxidation or the like of the insulating member filled in each part of the first region 11, the adhesion between the insulating part 15 and the surrounding substrate 10 further increases.

Note that the insulating portion 15 included in the vibration power generation element and the vibration elements 50, 50a, and 50b of each of the above-described embodiments is also formed by any one or more of the manufacturing methods from Modification Example 1 to Modification Example 6 described above. It's okay.

In each embodiment and each modification of the manufacturing method described above, one vibration power generation element 50, 50a, 50b or one vibration element 50, 50a, 50b is formed from the substrate 10. A plurality of vibration power generation elements 50, 50a, 50b or vibration elements 50, 50a, 50b may be formed in the X direction and in a plurality of rows in the X direction. When cutting the substrate 10 along the cutting lines SL1 to SL4 in step 7, the plurality of vibration power generation elements 50, 50a, 50b or the vibration elements 50, 50a, 50b are individually cut. It is separated into vibrating elements 50, 50a, and 50b.

In each embodiment and each modification of the manufacturing method described above, two or more first regions 11 are formed on the substrate 10. However, the number of first regions 11 formed on the substrate 10 may be one.

For example, in the first embodiment of the manufacturing method described above, two first regions 11 arranged apart in the Z direction as shown in FIG. 1(a), FIG. 2(a), FIG. 4(a), etc. Of these, the first region 11 is not arranged on the −Z side, and therefore the insulating portion 15 does not need to be formed. In this case, the region that was the first region 11 on the -Z side is included in the internal region 17a and removed from the substrate 10 in step 5 described above. Thereby, one first region 11 and one insulating section 15 can form the first support section 18 and the second support section 22 which are electrically insulated from each other.

Note that when two first regions 11 are formed on the substrate 10 as in each of the above-described embodiments and modifications, the first support portion 18 and the second support portions 22, 22a are It is mechanically connected to and supported by insulating parts 15 formed on each of the parts 11 and 11, respectively. Therefore, the first support portion 18 and the second support portions 22, 22a can form the vibrating element 50 that is more firmly held.

(Effects of each embodiment and each modification of the method for manufacturing a vibration element)
(1) Each embodiment and each modification of the method for manufacturing a vibration element includes preparing a conductive substrate 10, forming a gap 14 in the first region 11 of the substrate 10, and forming a gap in the first region 11. The second region 17 in contact with the first region 11 is removed from the substrate 10 to form a first region mechanically connected to the first region 15. A supporting portion 18 , second supporting portions 22 and 22 a that are mechanically connected to the insulating portion 15 and insulated from the first supporting portion 18 , and a first electrode 19 supported by the first supporting portion 18 . , and a second electrode 23 supported by the second support portions 22, 22a.
With this configuration, the vibration element 50 including the insulating part 15 can be formed without using an SOI substrate or a substrate in which a doped conductive layer is formed on an intrinsic silicon substrate, and therefore the vibration element 50 can be manufactured at low cost. can do.

(2) Two first regions 11 that are separated from each other may exist on the substrate 10, and the second region 17 may be a region that is in contact with both of the two first regions 11. In this case, the first support portion 18 and the second support portions 22, 22a are mechanically connected to the insulating portions 15 formed in the two first regions 11, so the first support portion 18 and the second support portion 22, 22a are The portions 22 and 22a can form the vibrating element 50 that is more firmly held.

(3) Since the substrate 10 is a silicon substrate and the main component of the insulating portion 15 is silicon oxide, a so-called silicon process that is common in the semiconductor industry can be used. Thereby, inexpensive manufacturing equipment and materials can be used, and the manufacturing cost of the vibration element 50 can be further reduced.
(4) The insulating portion 15 may be formed by filling the void 14 formed in the first region 11 with powdered silicon 16 and oxidizing the filled powdered silicon 16 to form silicon oxide. Thereby, the insulating portion 15 can be formed at a lower cost.

(Effects of each embodiment and each modification of the method for manufacturing a vibration power generation element)
(5) Each embodiment and each modification of the method for manufacturing a vibration power generation element includes the method for manufacturing a vibration element in any one of (1) to (4) above, and one of the first electrode 19 and the second electrode 23. An electret 24 is formed on a portion of one electrode facing the other electrode.
Thereby, in combination with the effects described in any one of (1) to (4) above, the vibration power generation elements 50, 50a can be manufactured at low cost.

(Effects of each embodiment and each modification of the vibration element)
(6) Each embodiment and each modification of the vibrating element includes an insulating section 15, a conductive first support section 18 that is mechanically connected to the insulating section 15, and a conductive first support section 18 that is mechanically connected to the insulating section 15. , and conductive second support parts 22 and 22a that are insulated from the first support part 18, the first electrode 19 supported by the first support part 18, and the first electrode 19 supported by the second support part 22 and 22a. The first electrode 19 and the second electrode 23 are arranged facing each other with a distance of 10 μm or less.
With this configuration, a large capacitance can be formed between the first electrode 19 and the second electrode 23. This makes it possible to realize a vibration element that can be used, for example, as a high-sensitivity or high-precision vibration sensor.

(7) The upper surface of the first support section 18 and the upper surface of the second support sections 22, 22a are within the first plane PU, the upper end of the insulating section 15 is below the first plane PU, and the first support section The lower surface of the insulating portion 18 and the lower surfaces of the second support portions 22, 22a may be located within the second plane PD, and the lower end portion of the insulating portion 15 may be located above the second plane PD. With this configuration, the insulating part 15 does not protrude above or below the first support part 18 and the second support part 22, is downsized in the Z direction, and is easy to handle without unnecessary protrusions. It is possible to realize vibration power generation elements 50, 50a that are easy to use.

(Effects of each embodiment and each modification of the method for manufacturing a vibration power generation element)
(8) Each embodiment and each modification of the vibration power generation element includes the vibration element according to any one of (5) to (7) above, and has one of the first electrode 19 and the second electrode 23. , an electret 24 is formed in a portion facing the other electrode.
Thereby, together with the effects described in any one of (5) to (7) above, it is possible to realize the vibration power generation elements 50, 50a with high power generation efficiency.

Although various embodiments and modifications have been described above, the present invention is not limited to these. Moreover, each embodiment and modification may be applied individually, or may be used in combination. Other embodiments considered within the technical spirit of the present invention are also included within the scope of the present invention.

50... Vibration power generation element (vibration element), 10... Substrate , 1 1 ... First region, 14... Gap, 15... Insulating part, 16... Powdered silicon, 17... Second region, 17a... Internal region, 17b... External region , 17c... ancillary area, 17m... main area, 18... first support part, 19... first electrode, 20... support frame, 21... electrode support part, 22, 22a... second support part, 23... second electrode, 24...Electret

Claims (15)

Prepare a conductive substrate,
forming a void in a first region of the substrate;
filling the gap formed in the first region with an insulating member to form an insulating part;
A second region in contact with the first region is removed from the substrate to provide a first support portion mechanically connected to the insulating portion, and a first support portion mechanically connected to the insulating portion and the first support portion. forming a second support part insulated from the second support part, a first electrode supported by the first support part, and a second electrode supported by the second support part;
A method for manufacturing a vibration element, comprising: In the method for manufacturing a vibration element according to claim 1,
There are two first regions spaced apart from each other on the substrate,
The method for manufacturing a vibration element, wherein the second region is a region in contact with both of the two first regions. Prepare a conductive substrate,
forming a void in a first region of the substrate;
filling the gap formed in the first region with an insulating member to form an insulating part;
A second region including a main region in contact with the first region and an incidental region not in contact with the first region is removed from the substrate to form a first support portion mechanically connected to the insulating portion. , a second support part mechanically connected to the insulating part and insulated from the first support part, a first electrode supported by the first support part, and supported by the second support part. forming a second electrode;
A method for manufacturing a vibration element, comprising: In the method for manufacturing a vibration element according to any one of claims 1 to 3,
The substrate is a silicon substrate,
A method for manufacturing a vibration element, wherein the main component of the insulating part is silicon oxide. In the method for manufacturing a vibration element according to claim 4,
The method for manufacturing a vibration element, wherein the insulating portion is formed by filling the void formed in the first region with powdered silicon and oxidizing the filled powdered silicon to form silicon oxide. In the method for manufacturing a vibration element according to claim 5,
A method for manufacturing a vibration element, wherein the gap is filled with powdered glass in addition to the powdered silicon. In the method for manufacturing a vibration element according to any one of claims 1 to 6,
The method for manufacturing a vibration element, wherein the first region is a region in which the first support portion and the second support portion are meshed with each other and separated with the first region interposed therebetween. In the method for manufacturing a vibration element according to any one of claims 1 to 7,
A method of manufacturing a vibration element, wherein the first electrode and the second electrode are formed to face each other in an in-plane direction of the substrate. The method for manufacturing a vibration element according to claim 8,
A method for manufacturing a vibration element, wherein the first electrode and the second electrode are formed to face each other in a comb-teeth shape. In the method for manufacturing a vibration element according to claim 8 or 9,
A method of manufacturing a vibration element, wherein the first electrode and the second electrode are formed facing each other with a distance of 10 μm or less. A method for manufacturing a vibration element according to any one of claims 8 to 10,
A method for manufacturing a vibration power generation element, comprising forming an electret in a portion of one of the first electrode and the second electrode facing the other electrode. an insulating section;
a conductive first support part mechanically connected to the insulating part;
a conductive second support part that is mechanically connected to the insulating part and insulated from the first support part;
a first electrode supported by the first support part;
a second electrode supported by the second support part;
Equipped with
The insulating part is provided in close contact between opposing surfaces of the first support part and the second support part, and
In the vibration element, the first electrode and the second electrode are arranged to face each other with a distance of 10 μm or less in a direction perpendicular to a vibration direction used for power generation. The vibration element according to claim 12,
The first support portion and the second support portion are in mesh with each other via the insulating portion. The vibration element according to claim 12 or 13,
The upper surface of the first support part and the upper surface of the second support part are in a first plane, and the upper end part of the insulating part is below the first plane,
A lower surface of the first support portion and a lower surface of the second support portion are within a second plane, and a lower end portion of the insulating portion is above the second plane. comprising the vibration element according to any one of claims 12 to 14,
A vibration power generation element, wherein an electret is formed in a portion of one of the first electrode and the second electrode facing the other electrode.

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