CN111217322B - Preparation method of rotating structure and rotating structure - Google Patents
Preparation method of rotating structure and rotating structure Download PDFInfo
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- CN111217322B CN111217322B CN202010052774.4A CN202010052774A CN111217322B CN 111217322 B CN111217322 B CN 111217322B CN 202010052774 A CN202010052774 A CN 202010052774A CN 111217322 B CN111217322 B CN 111217322B
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- 229910052710 silicon Inorganic materials 0.000 claims description 69
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- 238000005530 etching Methods 0.000 claims description 25
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B5/00—Devices comprising elements which are movable in relation to each other, e.g. comprising slidable or rotatable elements
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00198—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising elements which are movable in relation to each other, e.g. comprising slidable or rotatable elements
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00523—Etching material
- B81C1/00539—Wet etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/04—Optical MEMS
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0323—Grooves
Abstract
The embodiment of the invention provides a preparation method of a rotating structure and the rotating structure, wherein the method comprises the following steps: preparing a first semiconductor structure by adopting a wet etching process, wherein the first semiconductor structure comprises a first slope groove positioned on a first surface and a second slope groove positioned on a second surface; the slope surface of the first slope groove and the slope surface of the second slope groove are both (111) crystal faces; preparing a second semiconductor structure including a first lower electrode connection unit and a second lower electrode connection unit which are independently disposed; arranging a first semiconductor structure on a second semiconductor structure by adopting a bonding process; preparing a rotatable unit in a preset area of a first semiconductor structure; an upper electrode, a first lower electrode and a second lower electrode are prepared on the first surface side of the first semiconductor structure. According to the technical scheme provided by the embodiment of the invention, the inclination angle of the prepared slope surface can be very small, the preparation process is simple, and the preparation flexibility of the slope surface is improved.
Description
Technical Field
The embodiment of the invention relates to the technical field of micro-electro-mechanical systems, in particular to a preparation method of a rotating structure and the rotating structure.
Background
In the field of micro-electro-mechanical systems, the rotating structure can be applied to wave front correction of adaptive optics, spatial light modulation, optical element alignment, micromanipulators, optical switches, optical attenuators, optical multiplexers and the like.
The driving mode according to the revolution mechanic is different, mainly divide into: electromagnetic drive, electrothermal drive, piezoelectric drive, electrostatic drive, and the like. The electromagnetic drive uses magnetic field force generated by an electromagnet or a permanent magnet as a driving force, the driving current of the driving mode is large, the energy consumption is large, and the manufacture of a magnetic film and the application of an external magnetic field are very difficult; the electrothermal drive utilizes drive current to cause the material to be heated and expanded to generate drive force, so the electrothermal drive has low response speed, large power consumption, larger influence of environmental temperature and lower precision; in the prior art, the MEMS piezoelectric manufacturing process is not mature, the manufacturing difficulty is high, and the performance is unstable, so that the MEMS piezoelectric driving device cannot be applied to the market in a mature way; the electrostatic driving is the most studied at present, and generally one or more pairs of electrodes are introduced into the structure, and the motion is driven by the electrostatic force between the electrodes, and the driving mode needs higher working voltage (more than or equal to 50V), and the working voltage is high, which is not favorable for the integrated integration of devices and circuits.
The rotating structure using electrostatic driving mainly uses two modes of comb tooth driving and flat plate driving, the comb tooth driving is realized by manufacturing fixed comb teeth and movable comb teeth, the movable comb teeth are suspended above the fixed comb teeth or form a certain angle with the fixed comb teeth, and two-dimensional rotation can be realized by driving the comb teeth in different directions. However, the size of the comb teeth and the gaps thereof is generally in the micron level, and once dust particles fall into the comb teeth, the comb teeth can cause the structure to be stuck, and the device cannot work normally, so that special attention needs to be paid to the packaging environment and the packaging. In the parallel plate driving structure, since the magnitude of the electrostatic force is inversely proportional to the square of the distance, and in order to prevent the upper and lower electrodes from generating the pull-in effect to cause structural damage, a large electrode distance is required between the upper and lower electrode plates, which results in the parallel plate driving requiring a high driving voltage (e.g. over 200V).
In order to overcome the defect of high driving voltage of the conventional structure, the stepped flat plate structure is a better method, the structure is more similar to a slope structure when the number of steps is larger, the corresponding driving voltage is also lower, and the process is more complicated.
Therefore, the electrostatic driving rotating structure in the prior art is simple in preparation process, stable in performance and difficult in electrostatic driving rotating structure without high voltage driving voltage.
Disclosure of Invention
In view of this, embodiments of the present invention provide a method for manufacturing a rotation structure and a rotation structure, and implement an electrostatic driving rotation structure with a simple manufacturing process and stable performance, and without a high driving voltage.
In a first aspect, an embodiment of the present invention provides a method for manufacturing a rotating structure, including:
preparing a first semiconductor structure by adopting a wet etching process, wherein the first semiconductor structure comprises a first slope groove positioned on a first surface and a second slope groove positioned on a second surface; the slope surface of the first slope groove and the slope surface of the second slope groove are both (111) crystal faces, and the first surface and the second surface are oppositely arranged;
preparing a second semiconductor structure including a first lower electrode connection unit and a second lower electrode connection unit which are independently disposed;
disposing a second surface of the first semiconductor structure over the independently disposed first and second lower electrode connection units of the second semiconductor structure using a bonding process;
preparing a rotatable unit in a preset area of the first semiconductor structure;
preparing an upper electrode electrically connected to the rotatable unit, a first lower electrode electrically connected to the first lower electrode connection unit, and a second lower electrode electrically connected to the second lower electrode connection unit on a first surface side of the first semiconductor structure.
In a second aspect, an embodiment of the present invention provides a rotating structure, which is prepared by any of the methods in the first aspect, and includes:
a second semiconductor structure including a first lower electrode connection unit and a second lower electrode connection unit independently provided;
a first semiconductor structure located above the first lower electrode connection unit and the second lower electrode connection unit of the second semiconductor structure, which are independently arranged, the first semiconductor structure including a rotatable unit, the rotatable unit including a first slope groove and a second slope groove, a slope surface of the first slope groove and a slope surface of the second slope groove both being (111) crystal planes;
the rotatable unit is electrically connected with the upper electrode, the first lower electrode is electrically connected with the first lower electrode connecting unit, and the second lower electrode is electrically connected with the second lower electrode connecting unit.
According to the rotating structure and the manufacturing method thereof provided by the embodiment of the invention, the first semiconductor structure and the second semiconductor structure are manufactured by adopting a wet etching process, and then the first semiconductor structure is arranged on the second semiconductor structure by adopting a bonding process, wherein the first surface and the second surface in the first semiconductor structure are etched by adopting the wet etching process, the etching is stopped at a (111) crystal face, and a first slope groove and a second slope groove are formed, wherein the slope groove can be understood as a groove structure comprising a slope face. Meanwhile, the included angle between the first surface and the (111) crystal plane, the second surface and the (111) crystal plane, so that the included angle between the slope surface of the first slope groove and the included angle between the slope surface of the second slope groove and the horizontal direction are controllable, and the inclination angle of the slope surfaces can be small, for example, smaller than 14 degrees. Compared with the slope surface prepared by the photoetching process in the prior art, the slope surface is limited by photoetching precision, the inclination angle of the slope surface is generally larger than 14 degrees, the inclination angle cannot be further reduced, and the setting freedom degree of the slope surface is limited.
Drawings
Fig. 1 is a schematic flow chart of a method for manufacturing a rotary structure according to an embodiment of the present invention;
FIGS. 2-6 are cross-sectional views of steps of a method for fabricating a rotating structure according to an embodiment of the present invention;
FIG. 7 is a schematic flow chart illustrating another method for fabricating a rotary structure according to an embodiment of the present invention;
FIGS. 8-15 are cross-sectional views of alternative methods for fabricating a rotating structure according to embodiments of the present invention;
FIG. 16 is a schematic flow chart illustrating a method for fabricating a rotary structure according to another embodiment of the present invention;
FIGS. 17-26 are cross-sectional views of steps of a method for fabricating a rotary structure according to an embodiment of the present invention;
FIG. 27 is a schematic flow chart illustrating a method for fabricating a rotary structure according to an embodiment of the present invention;
FIG. 28 is a cross-sectional view of another method for fabricating a rotary structure according to an embodiment of the present invention;
fig. 29 is a schematic structural diagram of a rotating structure according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
An embodiment of the present invention provides a method for manufacturing a rotating structure, and fig. 1 shows a schematic flow chart of the method for manufacturing a rotating structure according to the embodiment of the present invention, and the method for manufacturing a rotating structure according to the embodiment of the present invention is used for manufacturing an electrostatically-driven rotating structure, and referring to fig. 1, the method includes the following steps:
Referring to fig. 2, a wet etching process is used to prepare a first semiconductor structure 1, wherein the first semiconductor structure 1 includes a first slope groove 11 located on a first surface 100 and a second slope groove 12 located on a second surface 101; the slope surface 110 of the first slope groove 11 and the slope surface 120 of the second slope groove 12 are both (111) crystal planes, and the first surface 100 and the second surface 101 are oppositely arranged. In this embodiment, by using the principle of crystal structure, because different crystal planes have different included angles, and because the etching of the silicon wafer has anisotropy, the first semiconductor structure 1 is prepared by using a wet etching process in the embodiment of the present invention, wherein the first surface 100 and the second surface 101 in the first semiconductor structure 1 are etched by using the wet etching process, and the etching is stopped at the (111) crystal plane, so as to form the first slope groove 11 and the second slope groove 12, where the slope groove can be understood as a groove structure including a slope surface. Meanwhile, the included angles between the (111) crystal plane and the first and second surfaces 100 and 101 are controllable, so that the included angles between the slope surface 110 of the first slope groove 11 and the slope surface 120 of the second slope groove 12 and the horizontal direction are controllable, and the slope angles of the slope surfaces can be small, for example, smaller than 14 °. Compared with the slope surface prepared by the photoetching process in the prior art, the slope surface is limited by photoetching precision, the inclination angle of the slope surface is generally larger than 14 degrees, the inclination angle cannot be further reduced, and the setting freedom degree of the slope surface is limited.
And step 120, preparing a second semiconductor structure, wherein the second semiconductor structure comprises a first lower electrode connecting unit and a second lower electrode connecting unit which are independently arranged.
Referring to fig. 3, a second semiconductor structure 2 is prepared, the second semiconductor structure 2 including a first lower electrode connection unit 21 and a second lower electrode connection unit 22 independently disposed.
Referring to fig. 4, the second surface 101 of the first semiconductor structure 1 is disposed over the independently disposed first and second lower electrode connection units 21 and 22 of the second semiconductor structure 2 using a bonding process.
Referring to fig. 5, the rotatable unit 13 is prepared at a preset area a1 of the first semiconductor structure 1.
Referring to fig. 6, an upper electrode 30, a first lower electrode 40, and a second lower electrode 41 are prepared on the first surface 100 side of the first semiconductor structure 1, the upper electrode 30 is electrically connected to the rotatable unit 13, the first lower electrode 40 is electrically connected to the first lower electrode connection unit 21, and the second lower electrode 41 is electrically connected to the second lower electrode connection unit 22. In the present embodiment, the rotatable unit 13 is configured to rotate according to the electrostatic force between the upper electrode 30 and the first lower electrode 40, and between the upper electrode 30 and the second lower electrode 41, to implement corresponding functions.
The sequence of step 110, step 120, step 130, step 140, and step 150 is not limited in the embodiment of the present invention.
Illustratively, in this embodiment, by using the principle of crystal structure, because different crystal planes have different included angles and because the etching of the silicon wafer has anisotropy, the embodiment of the present invention employs a wet etching process to prepare the first semiconductor structure and the second semiconductor structure, and then employs a bonding process to dispose the first semiconductor structure on the second semiconductor structure, wherein the wet etching process is used to etch the first surface 100 and the second surface 101 in the first semiconductor structure 1, and the etching is stopped at the (111) crystal plane to form the first slope groove 11 and the second slope groove 12, where the slope groove can be understood as a groove structure including a slope surface. Meanwhile, the included angles between the (111) crystal plane and the first and second surfaces 100 and 101 are controllable, so that the included angles between the slope surface 110 of the first slope groove 11 and the slope surface 120 of the second slope groove 12 and the horizontal direction are controllable, and the slope angles of the slope surfaces can be small, for example, smaller than 14 °. Compared with the slope surface prepared by the photoetching process in the prior art, the slope surface is limited by photoetching precision, the inclination angle of the slope surface is generally larger than 14 degrees, the inclination angle cannot be further reduced, and the setting freedom degree of the slope surface is limited.
The method for manufacturing the first semiconductor structure 1 will be specifically described below.
Alternatively, on the basis of the above technical solution, referring to fig. 7, the step 110 of preparing the first semiconductor structure by using a wet etching process includes:
step 1101, providing a first silicon substrate, wherein the first silicon substrate comprises a first surface and a second surface which are oppositely arranged, the first surface and a (111) crystal plane of the first silicon substrate form a first included angle, and the second surface and the (111) crystal plane of the first silicon substrate form a second included angle.
Referring to fig. 8, a first silicon substrate 10 is provided, the first silicon substrate 10 includes a first surface 100 and a second surface 101 disposed opposite to each other, the first surface 100 and a (111) crystal plane of the first silicon substrate 10 form a first included angle α, and the second surface 101 and the (111) crystal plane of the first silicon substrate 10 form a second included angle β.
Referring to fig. 9, a first oxide layer 14 is grown on the first surface 100 and the second surface 101. Specifically, the first oxide layer 14 may be grown on the first surface 100 and the second surface 101 by thermal growth and setting a suitable growth temperature.
Referring to fig. 10, a portion of the first oxide layer 14 on the first surface 100 side and a portion of the first oxide layer 14 on the second surface 101 side are removed, respectively, to expose a portion of the first surface 100 and a portion of the second surface 101. Specifically, a portion of the first oxide layer 14 on the first surface 100 side and a portion of the first oxide layer 14 on the second surface 101 side may be exposed by photolithography and development, and then the exposed portion of the first oxide layer 14 on the first surface 100 side and a portion of the first oxide layer 14 on the second surface 101 side may be etched and removed.
And 1104, performing wet etching on the first surface and the second surface to expose part of the (111) crystal face respectively to obtain a first slope groove and a second slope groove, wherein the slope face of the first slope groove and the slope face of the second slope groove are both the (111) crystal face.
Referring to fig. 11, wet etching is performed on the first surface 100 and the second surface 101 to expose a portion of the (111) crystal plane respectively, so as to obtain a first slope groove 11 and a second slope groove 12, where both the slope surface 110 of the first slope groove 11 and the slope surface 120 of the second slope groove 12 are the (111) crystal plane.
Step 1105, removing the remaining first oxide layer on the first surface and the first oxide layer on the second surface.
Referring to fig. 12, in particular, the remaining first oxide layer 14 on the first surface 100 and the first oxide layer 14 on the second surface 101 may be removed by photolithography and development.
Referring to fig. 13, specifically, a thermal growth method may be used, and a suitable growth temperature is set, so that the second oxide layer 15 is grown on the first surface 100, the slope surface 120 of the first slope groove 11 on the first surface 100 side, the second surface 101, and the slope surface of the second slope groove on the second surface side.
Referring to fig. 14, specifically, the second oxide layer 15 on the second surface 101 side in the predetermined region a1 may be removed by photolithography and development. The second oxide layer 15 on the second surface 101 side in the predetermined area a1 is removed to prevent it from accumulating charges and affecting the rotation of the rotatable unit 13 according to the electrostatic force between the upper electrode 30 and the first lower electrode 40, and between the upper electrode 30 and the second lower electrode 41, so as to achieve the corresponding function.
Referring to fig. 15, a bonding layer 16 is prepared on a surface of the second oxide layer 15 away from the second surface 101, resulting in the first semiconductor structure 1.
Alternatively, the material used for bonding layer 16 may be germanium.
The ridge line of the slope surface 110 of the first slope groove 11 is parallel to the ridge line of the slope surface 120 of the second slope groove 12, and the slope surface 110 of the first slope groove 11 may be parallel to the slope surface 120 of the second slope groove 12, or may not be parallel.
In the embodiment of the present invention, the sequence of step 1101, step 1102, step 1103, step 1104, step 1105, step 1106, step 1107, and step 1108 is not limited.
The method of fabricating the second semiconductor structure 2 is described in detail below.
Alternatively, on the basis of the above technical solution, referring to fig. 16, the step 120 of preparing the second semiconductor structure includes:
Referring to fig. 17, a second silicon substrate 20 is provided, the second silicon substrate 20 includes a third surface 200 disposed opposite to the third surface 200 and a fourth surface 201 disposed opposite to the third surface 200, and the third surface 200 and a (111) crystal plane of the second silicon substrate 20 form a third included angle δ.
And step 1202, growing a third oxide layer on the third surface and the fourth surface.
Referring to fig. 18, specifically, a thermal growth method may be adopted, and a suitable growth temperature is set to grow the third oxide layer 23 on the third surface 200 and the fourth surface 201.
Referring to fig. 19, specifically, a portion of the third oxide layer 23 on the third surface 200 side may be removed by photolithography and development.
And 1204, performing wet etching on the third surface to expose part of the (111) crystal face to obtain a third slope groove, wherein the slope face of the third slope groove is the (111) crystal face.
Referring to fig. 20, wet etching is performed on the third surface 200 to expose a part of the (111) crystal plane, so as to obtain a third inclined groove 24, where an inclined plane 240 of the third inclined groove 24 is the (111) crystal plane.
Referring to fig. 21, specifically, the remaining third oxide layer 23 on the third surface 200 and the third oxide layer 23 on the fourth surface 201 may be removed by photolithography and development.
And 1206, growing a fourth oxide layer on the third surface, the slope surface of the third slope groove and the fourth surface.
Referring to fig. 22, specifically, a thermal growth method may be adopted, and a suitable growth temperature is set, so as to grow the fourth oxide layer 25 on the third surface 200, the slope surface 240 of the third slope groove 24, and the fourth surface 201.
Referring to fig. 23, a first electrode connection layer 26 is formed on the slope surface 240 of the third slope groove 24 and the third surface 200 of the first side of the third slope groove 24, a second electrode connection layer 27 is formed on the third surface of the second side of the third slope groove, the third slope groove 24 is located between the third surface 200 of the first side of the third slope groove 24 and the third surface 200 of the second side of the third slope groove 24, and the first electrode connection layer 26 and the second electrode connection layer 27 are insulated from each other, so that the second semiconductor structure 2 is obtained.
The first electrode connection layer 26 and the second electrode connection layer 27 may be exemplified by metal film layers having good electrical conductivity.
In the embodiment, by using the principle of crystal structure, because different crystal planes have different included angles, and because the etching of the silicon wafer has anisotropy, the embodiment of the invention performs wet etching on the third surface of the second silicon substrate by using a wet etching process, and the etching is stopped at the (111) crystal plane to form the third inclined groove 24, wherein the inclined groove can be understood as a groove structure including an inclined plane. Meanwhile, the angle between the third surface and the (111) crystal plane is controllable, so that the angle between the slope 240 of the third sloped recess 24 and the horizontal direction is controllable, and the slope angle can be small, for example, smaller than 14 °. Compared with the slope surface prepared by the photoetching process in the prior art, the slope surface is limited by photoetching precision, the inclination angle of the slope surface is generally larger than 14 degrees, the inclination angle cannot be further reduced, and the setting freedom degree of the slope surface is limited.
The sequence of step 1201, step 1202, step 1203, step 1204, step 1205, step 1206, and step 1207 is not limited in the embodiment of the present invention.
Alternatively, on the basis of the above technical solution, the (111) plane is deviated from the (001) plane to be a positive angle, the deviation from the (001) plane to be a negative angle, and the first included angle α satisfies greater than or equal to-35.3 ° and less than or equal to 0 °, or greater than 0 ° and less than or equal to 54.7 °; the second included angle β satisfies greater than or equal to-35.3 ° and less than or equal to 0 °, or greater than 0 ° and less than or equal to 54.7 °; the third included angle δ satisfies greater than or equal to-35.3 ° and less than or equal to 0 °, or greater than 0 ° and less than or equal to 54.7 °;
the slope face 110 of the first slope groove 11 has an inclination angle θ, where θ is greater than 0 ° and less than or equal to 90 °; the inclination angle of the slope face 120 of the second slope groove 12 is phi greater than 0 deg. and less than or equal to 90 deg.; the inclination angle of the slope surface 110 of the first slope groove 11 is the included angle between the slope surface 110 of the first slope groove 11 and the horizontal direction, and the inclination angle of the slope surface 120 of the second slope groove 12 is the included angle between the slope surface 120 of the second slope groove 12 and the horizontal direction; the slope surface 240 of the third sloped groove 24 has an inclination angle γ, where γ is greater than 0 ° and less than or equal to 90 °, and the inclination angle of the slope surface 240 of the third sloped groove 24 is an angle between the slope surface 240 of the third sloped groove 24 and the horizontal direction.
It should be noted that, when the first included angle α and/or the second included angle β is equal to-35.3 °, the first surface 100 and/or the second surface 101 is (110) crystal plane, and when the included angle is greater than or equal to-35.3 ° and less than or equal to 0 °, the bottom of the trench during the complete etching is a bottom of a line formed by 2 (111) crystal planes, and the included angle formed by two (111) crystal planes is 109.47 °, and at this time, the inclination angle of the slope surface 110 of the first slope groove 11 and/or the slope surface 120 of the second slope groove 12 may be 0 to 70.53 °. When the first included angle α and/or the second included angle β is equal to 54.7 °, the first surface 100 and/or the second surface 101 is (001) plane, and when greater than 0 ° and less than or equal to 54.7 °, the bottom of the trench at the time of complete etching is a four-sided pyramid bottom formed by 4 (111) planes, wherein the included angle of two (111) planes is 70.53 °, and when the inclined plane 110 of the first slope groove 11 and/or the inclined plane 120 of the second slope groove 12 may have an inclination angle of 0 to 109.47 °. Therefore, a first angle between the first surface 100 and the (111) crystal plane of the first silicon substrate and a second angle between the second surface 101 and the (111) crystal plane of the first silicon substrate 10 can be set reasonably according to the requirements of the inclination angles of the slope surface 110 of the first slope groove 11 and the slope surface 120 of the second slope groove 12, and a slope of 0-90 ° can be manufactured.
When the third included angle δ is equal to-35.3 °, the third surface 200 is a (110) crystal plane, and when the third included angle δ is greater than or equal to-35.3 ° and less than or equal to 0 °, the bottom of the trench during full etching is a bottom of a line formed by 2 (111) crystal planes, and an included angle formed by two (111) crystal planes is 109.47 °, and the slope of the third slope groove may be 0 to 70.53 °. When the third included angle δ is equal to 54.7 °, the third surface 200 is a (001) crystal plane, and when the third included angle δ is greater than 0 ° and less than or equal to 54.7 °, the bottom of the trench during full etching is a tetrahedral bottom formed by 4 (111) crystal planes, wherein the included angle between the two (111) planes is 70.53 °, and the inclined angle of the slope 240 of the third sloping groove 24 may be 0 to 109.47 °. Therefore, the third included angle δ between the third surface 200 and the (111) crystal plane can be reasonably set according to the requirement of the inclination angle of the slope surface 240 of the third slope groove 24, and a slope with the inclination angle of 0-90 ° can be manufactured.
In summary, the first included angle α, the second included angle β, and the third included angle δ are controllable, so that the inclination angle of the slope surface 110 of the first slope groove 11, the inclination angle of the slope surface 120 of the second slope groove 12, and the inclination angle of the slope surface 240 of the third slope groove 24 are all adjustable and controllable, and can be very small, for example, smaller than 14 °, such as 3 °, 5 °, or 10 °, however, in the prior art, the slope surface is prepared by using a photolithography process, which is limited by process accuracy, the obtained inclination angle is generally larger than 14 °, the inclination angle cannot be further reduced, and the freedom degree of design of the slope unit is limited.
The method of manufacturing the first semiconductor structure 1 and the second semiconductor structure 2 bonded together is described in detail below.
Optionally, on the basis of the foregoing technical solution, the step 130 of disposing the second surface of the first semiconductor structure on the independently disposed first lower electrode connection unit and second lower electrode connection unit of the second semiconductor structure by using a bonding process includes:
and adopting a eutectic bonding process to position the second surface side of the first silicon substrate on the third surface side of the second silicon substrate, wherein the third slope groove is positioned right below the first slope groove, the ridge line of the slope surface of the second slope groove is parallel to the ridge line of the slope surface of the third slope groove, and the inclination angle of the slope surface of the second slope groove is equal to the inclination angle of the slope surface of the third slope groove.
Referring to fig. 24, the second surface 101 side of the first silicon substrate 10 is located on the third surface 200 side of the second silicon substrate 20 by using a eutectic bonding process, wherein the third inclined groove 24 is located right below the first inclined groove 11, a ridge line of the inclined surface 120 of the second inclined groove 12 is parallel to a ridge line of the inclined surface 240 of the third inclined groove 24, and an inclination angle of the inclined surface 120 of the second inclined groove 12 is equal to an inclination angle of the inclined surface 240 of the third inclined groove 24.
The method for preparing the rotatable unit, the upper electrode, the first lower electrode and the second lower electrode is described in detail below.
Alternatively, on the basis of the above technical solution, the step 140 of preparing the rotatable unit on the first surface side of the first semiconductor structure comprises:
and carrying out deep silicon etching on the first surface of the first silicon substrate along the straight line where the ridge line of the first slope groove is located and the straight line where the ridge line of the second slope groove is located until the first silicon substrate penetrates through the second surface of the first silicon substrate, and thinning the first surface of the first silicon substrate and the slope surface of the first slope groove along a preset area to obtain a rotatable unit, wherein the preset area covers the first slope groove and the second slope groove.
Referring to fig. 25, the first surface 100 of the first silicon substrate 10 is subjected to deep silicon etching along a straight line where the ridge line of the first slope groove 11 and a straight line where the ridge line of the second slope groove 12 are located until penetrating through the second surface 101 of the first silicon substrate 10, and the first surface 100 of the first silicon substrate 10 and the slope surface 110 of the first slope groove 11 are thinned along a preset area a1, so that the rotatable unit 13 is obtained, and the preset area a1 covers the first slope groove 11 and the second slope groove 12.
Optionally, on the basis of the foregoing technical solution, performing deep silicon etching on the first surface of the first silicon substrate along a straight line where a ridge line of the first slope groove is located and a straight line where a ridge line of the second slope groove is located until the first surface penetrates through the second surface of the first silicon substrate, and thinning the first surface of the first silicon substrate and the slope surface of the first slope groove along a preset region to obtain a rotatable unit, where the preset region covers the first slope groove and the second slope groove, the method further includes:
and carrying out deep silicon etching on the first silicon substrate along the first preset position to form a first through hole and a second through hole, wherein the first through hole is positioned on the first lower electrode connecting unit, and the second through hole is positioned on the second lower electrode connecting unit.
Referring to fig. 26, the first silicon substrate 10 is subjected to deep silicon etching along the first predetermined position to form a first via 170 and a second via 171, the first via 170 is located on the first lower electrode connecting unit 21, and the second via 171 is located on the second lower electrode connecting unit 22.
Alternatively, on the basis of the above technical solution, referring to fig. 27, the step 150 of preparing an upper electrode, a first lower electrode and a second lower electrode on the first surface side of the first semiconductor structure includes:
Referring to fig. 28, the second oxide layer 15 on the first surface 100 side of the first silicon substrate 10 is etched along the second predetermined position to form a third groove 18;
Referring to fig. 28, an upper electrode 30 is formed, the upper electrode 30 covering the rotatable unit 13 and the third groove 18.
And 1503, forming a first lower electrode, wherein the first lower electrode covers the bottom surface and the side wall of the first through hole.
Referring to fig. 28, the first lower electrode 40 is formed, and the first lower electrode 40 covers the bottom surface and the sidewall of the first via hole 170.
Referring to fig. 28, the second lower electrode 41 is formed, and the second lower electrode 41 covers the bottom surface and the sidewall of the second via hole 171.
The embodiment of the present invention does not limit the manufacturing processes of the first lower electrode, the second lower electrode, and the upper electrode. The sequence of step 1501, step 1502, step 1503 and step 1504 is not limited.
Optionally, on the basis of the foregoing technical solution, before the step 1501 etches the second oxide layer on the first surface side of the silicon substrate along the second preset position to form the third groove, the method further includes:
and growing a fifth oxidation layer on the first surface side of the first silicon substrate to cover the side walls of the first through hole and the second through hole.
Referring to fig. 28, a fifth oxide layer 19 is grown on the first surface 100 side of the first silicon substrate 10, covering the sidewalls of the first via 170 and the second via 171.
Referring to fig. 28, the upper electrode 30 is connected to an upper electrode electrical signal, the first lower electrode 40 is connected to a first lower electrode electrical signal, the second lower electrode 41 is connected to a second lower electrode electrical signal, the upper electrode 30 and the first lower electrode 40 generate a first electrostatic force under the action of the upper electrode electrical signal and the first lower electrode electrical signal, the upper electrode 30 and the second lower electrode 41 generate a second electrostatic force under the action of the upper electrode electrical signal and the second lower electrode electrical signal, and the rotatable unit 13 rotates under the action of the first electrostatic force and the second electrostatic force to implement corresponding functions.
In this embodiment, by using the principle of crystal structure, because different crystal planes have different included angles, and because the etching of a silicon wafer has anisotropy, the embodiment of the present invention uses a wet etching process to prepare a first semiconductor structure and a second semiconductor structure, and then uses a bonding process to dispose the first semiconductor structure on the second semiconductor structure, wherein the wet etching process is used to etch the first surface 100 and the second surface 101 of the first semiconductor structure 1, and the etching is stopped at the (111) crystal plane to form a first slope groove 11 and a second slope groove 12, where the slope grooves can be understood as groove structures including slope surfaces. Meanwhile, the included angles between the (111) crystal plane and the first and second surfaces 100 and 101 are controllable, so that the included angles between the slope surface 110 of the first slope groove 11 and the slope surface 120 of the second slope groove 12 and the horizontal direction are controllable, and the slope angles of the slope surfaces can be small, for example, smaller than 14 °. Compared with the slope surface prepared by the photoetching process in the prior art, the slope surface is limited by photoetching precision, the inclination angle of the slope surface is generally larger than 14 degrees, the inclination angle cannot be further reduced, and the setting freedom degree of the slope surface is limited. Therefore, in the embodiment of the present invention, the wet etching process is used to perform wet etching on the third surface of the second silicon substrate, and the etching is stopped at the (111) crystal plane to form the third sloped recess 24, where the sloped recess may be understood as a recess structure including a sloped surface. Meanwhile, the angle between the third surface and the (111) crystal plane is controllable, so that the angle between the slope 240 of the third sloped recess 24 and the horizontal direction is controllable, and the slope angle can be small, for example, smaller than 14 °. Compared with the slope surface prepared by the photoetching process in the prior art, the slope surface is limited by photoetching precision, the inclination angle of the slope surface is generally larger than 14 degrees, the inclination angle cannot be further reduced, and the setting freedom degree of the slope surface is limited. And a eutectic bonding process is adopted, the second surface 101 side of the first silicon substrate 10 is positioned on the third surface 200 side of the second silicon substrate 20, wherein the third inclined groove 24 is positioned right below the first inclined groove 11, the ridge line of the inclined surface 120 of the second inclined groove 12 is parallel to the ridge line of the inclined surface 240 of the third inclined groove 24, and the inclination angle of the inclined surface 120 of the second inclined groove 12 is equal to the inclination angle of the inclined surface 240 of the third inclined groove 24. The upper electrode 30 is connected to an upper electrode electrical signal, the first lower electrode 40 is connected to a first lower electrode electrical signal, the second lower electrode 41 is connected to a second lower electrode electrical signal, the upper electrode 30 and the first lower electrode 40 generate a first electrostatic force under the action of the upper electrode electrical signal and the first lower electrode electrical signal, the upper electrode 30 and the second lower electrode 41 generate a second electrostatic force under the action of the upper electrode electrical signal and the second lower electrode electrical signal, and the rotatable unit 13 rotates under the action of the first electrostatic force and the second electrostatic force to realize corresponding functions.
Fig. 29 is a schematic structural view of a rotating structure according to an embodiment of the present invention, and the rotating structure shown in fig. 29 is prepared by using the above-mentioned method for preparing a rotating structure, as shown in fig. 28 and 29, the rotating structure according to an embodiment of the present invention further includes a support frame 50 and a torsion beam 60; in the above manufacturing method, the portion of the first semiconductor structure 1 outside the rotatable unit 13 and the portions of the second semiconductor structure 2 outside the first and second lower electrode connection units 21 and 22 are the support frames 50 of the rotatable structure.
Based on the same inventive concept, an embodiment of the present invention further provides a rotating structure, which is obtained by using the method for manufacturing a rotating structure provided by the embodiment of the present invention, with reference to fig. 28 and 29, and the rotating structure includes:
a second semiconductor structure 2, the second semiconductor structure 2 including a first lower electrode connection unit 21 and a second lower electrode connection unit 22 independently provided; a first semiconductor structure 1 located above a first lower electrode connection unit 21 and a second lower electrode connection unit 22 of a second semiconductor structure 2, the first semiconductor structure 1 including a rotatable unit 13, the rotatable unit 13 including a first slope groove 11 and a second slope groove 12, a slope surface 110 of the first slope groove 11 and a slope surface 120 of the second slope groove 12 both being (111) crystal planes; the display device includes an upper electrode 30, a first lower electrode 40, and a second lower electrode 41, wherein the upper electrode 30 is electrically connected to the rotatable unit 13, the first lower electrode 40 is electrically connected to the first lower electrode connection unit 21, and the second lower electrode 22 is electrically connected to the second lower electrode connection unit 22.
Alternatively, on the basis of the above technical solution, referring to fig. 28 and 29, the second semiconductor structure 2 includes: the first electrode connection layer 26 is located on the slope surface 240 of the third slope groove 24 and on the first side of the third slope groove 24, the second electrode connection layer 27 is located on the second side of the third slope groove 24, and the first electrode connection layer 26 and the second electrode connection layer 27 are arranged in an insulating manner.
Alternatively, on the basis of the above technical solution, referring to fig. 28 and 29, the third slope groove 24 is located right below the first slope groove 11, the ridge line of the slope surface 120 of the second slope groove 12 is parallel to the ridge line of the slope surface 240 of the third slope groove 24, and the inclination angle of the slope surface 120 of the second slope groove 12 is equal to the inclination angle of the slope surface 240 of the third slope groove 24.
Optionally, on the basis of the above technical solution, referring to fig. 28 and fig. 29, the first semiconductor structure 1 further includes a first via 170 and a second via 171, the first via 170 is located on the first lower electrode connection unit 21, and the second via 171 is located on the second lower electrode connection unit 22. Optionally, on the basis of the above technical solution, referring to fig. 28 and 29, an upper electrode 30 is further included, and the upper electrode 30 covers the rotatable unit 13; a first lower electrode 40, the first lower electrode 40 covering the bottom surface and the sidewall of the first via hole 170; and a second lower electrode 41, the second lower electrode 41 covering the bottom surface and the sidewall of the second via hole 171. Optionally, on the basis of the above technical solution, referring to fig. 28 and 29, the rotating structure further includes a support frame 50 and a torsion beam 60; the part outside the rotatable unit 13 in the first semiconductor structure 1 and the part outside the first lower electrode connecting unit 21 and the second lower electrode connecting unit 22 in the second semiconductor structure 2 are the supporting frame 50 of the rotating structure, one end of the torsion beam 60 is connected with the rotatable unit 13 along the ridge line direction of the slope surface 110 of the first slope groove 11, and the other end of the torsion beam 60 is connected with the supporting frame 50; the first disconnection point of the rotatable unit 13 from the support frame 50 is located on a straight line where the ridge line of the first slope groove 11 is located, and the second disconnection point is located on a straight line where the ridge line of the second slope groove 12 is located.
The rotating structure provided by the embodiment of the invention is obtained by adopting the preparation method of the rotating structure provided by the embodiment of the invention, has corresponding beneficial effects, and is not repeated herein.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments illustrated herein, but is capable of various obvious modifications, rearrangements, combinations and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (15)
1. A method of making a rotating structure, comprising:
preparing a first semiconductor structure by adopting a wet etching process, wherein the first semiconductor structure comprises a first slope groove positioned on a first surface and a second slope groove positioned on a second surface; the slope surface of the first slope groove and the slope surface of the second slope groove are both (111) crystal faces, and the first surface and the second surface are oppositely arranged;
preparing a second semiconductor structure including a first lower electrode connection unit and a second lower electrode connection unit which are independently disposed;
disposing a second surface of the first semiconductor structure over the independently disposed first and second lower electrode connection units of the second semiconductor structure using a bonding process;
preparing a rotatable unit in a preset area of the first semiconductor structure, comprising: carrying out deep silicon etching on the first surface along a straight line where a ridge line of the first slope groove is located and a straight line where a ridge line of the second slope groove is located until the first surface penetrates through the second surface, and thinning the first surface and a slope surface of the first slope groove along a preset area to obtain the rotatable unit, wherein the preset area covers the first slope groove and the second slope groove;
preparing an upper electrode electrically connected to the rotatable unit, a first lower electrode electrically connected to the first lower electrode connection unit, and a second lower electrode electrically connected to the second lower electrode connection unit on a first surface side of the first semiconductor structure.
2. The method of claim 1, wherein the step of fabricating the first semiconductor structure using a wet etching process comprises:
providing a first silicon substrate, wherein the first silicon substrate comprises a first surface and a second surface which are oppositely arranged, the first surface and a (111) crystal plane of the first silicon substrate form a first included angle, and the second surface and the (111) crystal plane of the first silicon substrate form a second included angle;
growing a first oxide layer on the first surface and the second surface;
respectively removing a part of the first oxidation layer on one side of the first surface and a part of the first oxidation layer on one side of the second surface to expose a part of the first surface and a part of the second surface;
wet etching is carried out on the first surface and the second surface, and partial (111) crystal faces are respectively exposed to obtain a first slope groove and a second slope groove, wherein both the slope face of the first slope groove and the slope face of the second slope groove are (111) crystal faces;
removing the first oxide layer remaining on the first surface and the first oxide layer on the second surface;
growing a second oxide layer on the first surface, a slope surface of a first slope groove on the first surface side, the second surface, and a slope surface of a second slope groove on the second surface side;
removing the second oxide layer on the second surface side in the preset area;
and preparing a bonding layer on the surface of the second oxide layer far away from the second surface to obtain a first semiconductor structure.
3. The method of claim 2, wherein fabricating a second semiconductor structure comprises:
providing a second silicon substrate, wherein the second silicon substrate comprises a third surface and a fourth surface, the third surface is arranged opposite to the fourth surface, and the third surface and a (111) crystal plane of the second silicon substrate form a third included angle;
growing a third oxide layer on the third surface and the fourth surface;
removing a part of the third oxide layer on one side of the third surface;
performing wet etching on the third surface to expose a part of the (111) crystal face to obtain a third slope groove, wherein the slope face of the third slope groove is the (111) crystal face;
removing the third oxide layer remaining on the third surface and the third oxide layer on the fourth surface;
growing a fourth oxide layer on the third surface, the slope surface of the third slope groove and the fourth surface;
the slope of third slope recess and the third surface of the first side of third slope recess prepares first electrode connection layer the third surface of the second side of third slope recess prepares second electrode connection layer, the third slope recess be located the third surface of the first side of third slope recess with between the third surface of the second side of third slope recess, first electrode connection layer with the insulating setting of second electrode connection layer obtains second semiconductor structure.
4. The method for producing a rotating structure according to claim 3, wherein the deviation of the (111) plane from the (001) plane is a positive angle and the deviation of the (001) plane is a negative angle, and the first angle satisfies-35.3 ° or more and 0 ° or less, or 0 ° or more and 54.7 ° or less; the second included angle is greater than or equal to-35.3 degrees and less than or equal to 0 degrees, or greater than 0 degrees and less than or equal to 54.7 degrees; the third included angle is greater than or equal to-35.3 degrees and less than or equal to 0 degrees, or greater than 0 degrees and less than or equal to 54.7 degrees;
the inclination angle of the slope surface of the first slope groove is theta, wherein theta is larger than 0 degree and smaller than or equal to 90 degrees; the inclination angle of the slope surface of the second slope groove is phi larger than 0 DEG and smaller than or equal to 90 DEG; the inclination angle of the slope surface of the first slope groove is the included angle between the slope surface of the first slope groove and the horizontal direction, and the inclination angle of the slope surface of the second slope groove is the included angle between the slope surface of the second slope groove and the horizontal direction; the inclination angle of the slope surface of the third slope groove is gamma, wherein gamma is larger than 0 degree and smaller than or equal to 90 degrees, and the inclination angle of the slope surface of the third slope groove is the included angle between the slope surface of the third slope groove and the horizontal direction.
5. The method of claim 3, wherein disposing the second surface of the first semiconductor structure over the independently disposed first and second lower electrode connection units of the second semiconductor structure using a bonding process comprises:
and positioning the second surface side of the first silicon substrate on the third surface side of the second silicon substrate by adopting a eutectic bonding process, wherein the third slope groove is positioned right below the first slope groove, the ridge line of the slope surface of the second slope groove is parallel to the ridge line of the slope surface of the third slope groove, and the inclination angle of the slope surface of the second slope groove is equal to the inclination angle of the slope surface of the third slope groove.
6. The method according to claim 2, wherein the deep silicon etching is performed on the first surface of the first silicon substrate along a straight line where a ridge line of the first slope groove is located and a straight line where a ridge line of the second slope groove is located until the first surface penetrates through the second surface of the first silicon substrate, and the first surface of the first silicon substrate and the slope surface of the first slope groove are thinned along a preset region to obtain the rotatable unit, and when the preset region covers the first slope groove and the second slope groove, the method further comprises:
and carrying out deep silicon etching on the first silicon substrate and the second oxide layer on one side of the second surface along a first preset position to form a first through hole and a second through hole, wherein the first through hole is positioned on the first lower electrode connecting unit, and the second through hole is positioned on the second lower electrode connecting unit.
7. The method for manufacturing a rotary structure according to claim 6, wherein preparing an upper electrode electrically connected to the rotatable unit, a first lower electrode electrically connected to the first lower electrode connection unit, and a second lower electrode electrically connected to the second lower electrode connection unit on a first surface side of the first semiconductor structure comprises:
etching the second oxide layer on the first surface side of the first silicon substrate along a second preset position to form a third groove;
forming an upper electrode covering the rotatable unit and the third groove;
forming a first lower electrode covering the bottom surface and the side wall of the first through hole;
and forming a second lower electrode which covers the bottom surface and the side wall of the second through hole.
8. The method for producing a rotary structure according to claim 7,
etching the second oxide layer on the first surface side of the silicon substrate along a second preset position, and before forming a third groove, the method further comprises:
and growing a fifth oxidation layer on the first surface side of the first silicon substrate to cover the side walls of the first through hole and the second through hole.
9. The method of manufacturing a rotating structure according to claim 3, wherein the rotating structure further comprises a support frame and a torsion beam;
the part of the first semiconductor structure outside the rotatable unit and the part of the second semiconductor structure outside the first lower electrode connection unit and the second lower electrode connection unit are support frames of the rotatable structure;
the preparation method further comprises the following steps:
preparing a torsion beam, wherein one end of the torsion beam is connected with the rotatable unit along the ridge line direction of the slope surface of the first slope groove, and the other end of the torsion beam is connected with the supporting frame.
10. A rotating structure, prepared by the method of any one of claims 1-9, comprising:
a second semiconductor structure including a first lower electrode connection unit and a second lower electrode connection unit independently provided;
a first semiconductor structure located above the first lower electrode connection unit and the second lower electrode connection unit of the second semiconductor structure, which are independently arranged, the first semiconductor structure including a rotatable unit, the rotatable unit including a first slope groove and a second slope groove, a slope surface of the first slope groove and a slope surface of the second slope groove both being (111) crystal planes;
the rotatable unit is electrically connected with the upper electrode, the first lower electrode is electrically connected with the first lower electrode connecting unit, and the second lower electrode is electrically connected with the second lower electrode connecting unit.
11. The rotary structure of claim 10, wherein the second semiconductor structure comprises: first electrode connection layer, second electrode connection layer and third slope recess, first electrode connection layer is located the slope of third slope recess and the first side of third slope recess, second electrode connection layer is located the second side of third slope recess, first electrode connection layer with the insulating setting of second electrode connection layer.
12. The rotary structure according to claim 11, wherein the third slope groove is located directly below the first slope groove, a ridge line of a slope surface of the second slope groove is parallel to a ridge line of a slope surface of the third slope groove, and an inclination angle of the slope surface of the second slope groove is equal to an inclination angle of the slope surface of the third slope groove.
13. The rotary structure according to claim 12, wherein the first semiconductor structure further comprises a first via hole and a second via hole, the first via hole being located above the first lower electrode connection unit, the second via hole being located above the second lower electrode connection unit.
14. The rotating structure according to claim 13, further comprising an upper electrode covering the rotatable unit;
a first lower electrode covering a bottom surface and a sidewall of the first via hole;
and the second lower electrode covers the bottom surface and the side wall of the second through hole.
15. The rotating structure of claim 12, further comprising a support frame and a twist beam; the part of the first semiconductor structure outside the rotatable unit and the part of the second semiconductor structure outside the first lower electrode connecting unit and the second lower electrode connecting unit are support frames of the rotatable structure, one end of the torsion beam is connected with the rotatable unit along the ridge line direction of the slope surface of the first slope groove, and the other end of the torsion beam is connected with the support frames; the first disconnection position of the rotatable unit and the support frame is located on the straight line where the ridge line of the first slope groove is located, and the second disconnection position of the rotatable unit and the support frame is located on the straight line where the ridge line of the second slope groove is located.
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Denomination of invention: A kind of preparation method of rotating structure and rotating structure Effective date of registration: 20220816 Granted publication date: 20210209 Pledgee: Bank of China Limited Shanghai Jiading Sub-branch Pledgor: Shanghai Core Technology Co.,Ltd. Registration number: Y2022310000178 |
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