JP7353765B2 - 光検出装置、光検出システム及び移動体 - Google Patents

光検出装置、光検出システム及び移動体 Download PDF

Info

Publication number
JP7353765B2
JP7353765B2 JP2019022355A JP2019022355A JP7353765B2 JP 7353765 B2 JP7353765 B2 JP 7353765B2 JP 2019022355 A JP2019022355 A JP 2019022355A JP 2019022355 A JP2019022355 A JP 2019022355A JP 7353765 B2 JP7353765 B2 JP 7353765B2
Authority
JP
Japan
Prior art keywords
avalanche
avalanche diodes
quench
photoelectric conversion
diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2019022355A
Other languages
English (en)
Japanese (ja)
Other versions
JP2019192903A (ja
JP2019192903A5 (enExample
Inventor
旬史 岩田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to US16/385,466 priority Critical patent/US10833207B2/en
Publication of JP2019192903A publication Critical patent/JP2019192903A/ja
Publication of JP2019192903A5 publication Critical patent/JP2019192903A5/ja
Application granted granted Critical
Publication of JP7353765B2 publication Critical patent/JP7353765B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
JP2019022355A 2018-04-24 2019-02-12 光検出装置、光検出システム及び移動体 Active JP7353765B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/385,466 US10833207B2 (en) 2018-04-24 2019-04-16 Photo-detection device, photo-detection system, and mobile apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018082796 2018-04-24
JP2018082796 2018-04-24

Publications (3)

Publication Number Publication Date
JP2019192903A JP2019192903A (ja) 2019-10-31
JP2019192903A5 JP2019192903A5 (enExample) 2022-02-10
JP7353765B2 true JP7353765B2 (ja) 2023-10-02

Family

ID=68390943

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019022355A Active JP7353765B2 (ja) 2018-04-24 2019-02-12 光検出装置、光検出システム及び移動体

Country Status (1)

Country Link
JP (1) JP7353765B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7492338B2 (ja) 2020-01-30 2024-05-29 キヤノン株式会社 光電変換装置、光電変換システム及び移動体
JP7592538B2 (ja) * 2020-07-21 2024-12-02 キヤノン株式会社 光検出システム
JP2022054553A (ja) * 2020-09-28 2022-04-07 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および、撮像装置
CN112945379B (zh) * 2021-02-03 2024-03-12 中国科学院长春光学精密机械与物理研究所 一种单光子探测器死时间设置与噪声滤除的系统
WO2023067755A1 (ja) 2021-10-21 2023-04-27 ソニーセミコンダクタソリューションズ株式会社 光検出装置、撮像装置および測距装置
CN116131833B (zh) * 2022-04-15 2024-06-14 浙桂(杭州)半导体科技有限责任公司 雪崩二极管控制电路
CN116960133B (zh) * 2022-04-15 2024-06-21 浙桂(杭州)半导体科技有限责任公司 一种高填充系数雪崩二极管传感器
TWI836678B (zh) * 2022-10-22 2024-03-21 國立陽明交通大學 具深度資訊之影像感測晶片
WO2025234314A1 (ja) * 2024-05-08 2025-11-13 ソニーセミコンダクタソリューションズ株式会社 光検出装置および測距装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010536165A (ja) 2007-08-06 2010-11-25 マックス プランク ゲゼルシャフト ツゥアー フェデルゥン デル ヴィッセンシャフテン エー フォー アバランシェフォトダイオード
WO2016166002A1 (en) 2015-04-15 2016-10-20 Ams Ag Avalanche diode arrangement and method for providing a detection signal
WO2017004663A1 (en) 2015-07-08 2017-01-12 The Commonwealth Of Australia Spad array structures and methods of operation
JP2018064086A (ja) 2016-10-13 2018-04-19 キヤノン株式会社 光検出装置および光検出システム

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010536165A (ja) 2007-08-06 2010-11-25 マックス プランク ゲゼルシャフト ツゥアー フェデルゥン デル ヴィッセンシャフテン エー フォー アバランシェフォトダイオード
WO2016166002A1 (en) 2015-04-15 2016-10-20 Ams Ag Avalanche diode arrangement and method for providing a detection signal
WO2017004663A1 (en) 2015-07-08 2017-01-12 The Commonwealth Of Australia Spad array structures and methods of operation
JP2018064086A (ja) 2016-10-13 2018-04-19 キヤノン株式会社 光検出装置および光検出システム

Also Published As

Publication number Publication date
JP2019192903A (ja) 2019-10-31

Similar Documents

Publication Publication Date Title
JP7353765B2 (ja) 光検出装置、光検出システム及び移動体
US10833207B2 (en) Photo-detection device, photo-detection system, and mobile apparatus
JP7657885B2 (ja) 光検出装置および光検出システム
US11309440B2 (en) Imaging device and imaging system
JP7242234B2 (ja) 光検出装置、光検出システム
JP7129199B2 (ja) 光検出装置、光検出システム及び移動体
JP7630985B2 (ja) 光電変換装置及びその駆動方法
US10283651B2 (en) Photodetection device and system having avalanche amplification
JP7114244B2 (ja) 光検出装置、光検出システム、及び移動体
JP7224823B2 (ja) 光検出装置
JP7379000B2 (ja) 光電変換装置、光電変換システム、および移動体
US20230258776A1 (en) Photoelectric conversion device and photoelectric conversion system
US20240379697A1 (en) Light detection device and light detection system
US20200213542A1 (en) Photo-detection device and imaging system
JP7492338B2 (ja) 光電変換装置、光電変換システム及び移動体
JP2022112912A (ja) 光電変換装置、光電変換システムおよび移動体
JP7739108B2 (ja) 光電変換装置、光検出システム及び移動体
JP2025070130A (ja) 光電変換装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220202

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220202

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20220630

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20230222

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230228

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230425

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230822

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230920

R151 Written notification of patent or utility model registration

Ref document number: 7353765

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151