JP7341373B1 - 電磁波検出器、電磁波検出器アレイ及び画像センサ - Google Patents
電磁波検出器、電磁波検出器アレイ及び画像センサ Download PDFInfo
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- JP7341373B1 JP7341373B1 JP2023525554A JP2023525554A JP7341373B1 JP 7341373 B1 JP7341373 B1 JP 7341373B1 JP 2023525554 A JP2023525554 A JP 2023525554A JP 2023525554 A JP2023525554 A JP 2023525554A JP 7341373 B1 JP7341373 B1 JP 7341373B1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
- H10N15/15—Thermoelectric active materials
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- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022049678 | 2022-03-25 | ||
| JP2022049678 | 2022-03-25 | ||
| PCT/JP2023/000638 WO2023181593A1 (ja) | 2022-03-25 | 2023-01-12 | 電磁波検出器、電磁波検出器アレイ及び画像センサ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP7341373B1 true JP7341373B1 (ja) | 2023-09-08 |
| JPWO2023181593A1 JPWO2023181593A1 (https=) | 2023-09-28 |
| JPWO2023181593A5 JPWO2023181593A5 (https=) | 2024-02-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023525554A Active JP7341373B1 (ja) | 2022-03-25 | 2023-01-12 | 電磁波検出器、電磁波検出器アレイ及び画像センサ |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20250185515A1 (https=) |
| JP (1) | JP7341373B1 (https=) |
| CN (1) | CN118901146A (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025163982A1 (ja) * | 2024-01-31 | 2025-08-07 | 太陽誘電株式会社 | 光センサおよび光センサの製造方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12468074B2 (en) * | 2023-12-20 | 2025-11-11 | Toyota Motor Engineering & Manufacturing North America, Inc. | Plasmonic borophene nanoribbon metal-insulator-metal structure for quantum imaging |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180166590A1 (en) * | 2014-08-06 | 2018-06-14 | Samsung Electronics Co., Ltd. | Photosensor including multiple detection mode and method of operating the same |
| JP2019121687A (ja) * | 2018-01-05 | 2019-07-22 | 国立研究開発法人理化学研究所 | 光電変換素子、光センサ、発電装置、及び光電変換方法 |
| WO2019171622A1 (ja) * | 2018-03-06 | 2019-09-12 | 三菱電機株式会社 | 電磁波検出器及びそれを備えた電磁波検出器アレイ |
| JP2021168332A (ja) * | 2020-04-09 | 2021-10-21 | 富士通株式会社 | 光センサ、及びこれを用いた撮像装置 |
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2023
- 2023-01-12 US US18/845,462 patent/US20250185515A1/en active Pending
- 2023-01-12 JP JP2023525554A patent/JP7341373B1/ja active Active
- 2023-01-12 CN CN202380028949.XA patent/CN118901146A/zh active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180166590A1 (en) * | 2014-08-06 | 2018-06-14 | Samsung Electronics Co., Ltd. | Photosensor including multiple detection mode and method of operating the same |
| JP2019121687A (ja) * | 2018-01-05 | 2019-07-22 | 国立研究開発法人理化学研究所 | 光電変換素子、光センサ、発電装置、及び光電変換方法 |
| WO2019171622A1 (ja) * | 2018-03-06 | 2019-09-12 | 三菱電機株式会社 | 電磁波検出器及びそれを備えた電磁波検出器アレイ |
| JP2021168332A (ja) * | 2020-04-09 | 2021-10-21 | 富士通株式会社 | 光センサ、及びこれを用いた撮像装置 |
Non-Patent Citations (4)
| Title |
|---|
| CHEN, Y.Y. et al.,Modulation of carrier density in graphene on polycrystalline PZT ceramic,Diamond and Related Materials,2017年,Vol.77,pp.10-15 |
| CHEN, Y.Y. ET AL.: "Modulation of carrier density in graphene on polycrystalline PZT ceramic", DIAMOND AND RELATED MATERIALS, vol. 77, JPN6023007306, 2017, pages 10 - 15, ISSN: 0005120278 * |
| ZHANG, Yong et al.,Lateral Graphene p-n Junctions Realized by Nanoscale Bipolar Doping Using Surface Electric Dipoles a,ADVANCED MATERIALS INTERFACES,2019年,Vol.6,pp.1801380-1 - 1801380-7 |
| ZHANG, YONG ET AL.: "Lateral Graphene p-n Junctions Realized by Nanoscale Bipolar Doping Using Surface Electric Dipoles a", ADVANCED MATERIALS INTERFACES, vol. 6, JPN6023007307, 2019, pages 1801380 - 1, ISSN: 0005120277 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025163982A1 (ja) * | 2024-01-31 | 2025-08-07 | 太陽誘電株式会社 | 光センサおよび光センサの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN118901146A (zh) | 2024-11-05 |
| JPWO2023181593A1 (https=) | 2023-09-28 |
| US20250185515A1 (en) | 2025-06-05 |
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