JP7341373B1 - 電磁波検出器、電磁波検出器アレイ及び画像センサ - Google Patents

電磁波検出器、電磁波検出器アレイ及び画像センサ Download PDF

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JP7341373B1
JP7341373B1 JP2023525554A JP2023525554A JP7341373B1 JP 7341373 B1 JP7341373 B1 JP 7341373B1 JP 2023525554 A JP2023525554 A JP 2023525554A JP 2023525554 A JP2023525554 A JP 2023525554A JP 7341373 B1 JP7341373 B1 JP 7341373B1
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electrode
electromagnetic wave
layer
wave detector
dimensional material
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JPWO2023181593A5 (https=
JPWO2023181593A1 (https=
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政彰 嶋谷
昌一郎 福島
新平 小川
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H10N15/10Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
    • H10N15/15Thermoelectric active materials

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  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2023525554A 2022-03-25 2023-01-12 電磁波検出器、電磁波検出器アレイ及び画像センサ Active JP7341373B1 (ja)

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JP2022049678 2022-03-25
JP2022049678 2022-03-25
PCT/JP2023/000638 WO2023181593A1 (ja) 2022-03-25 2023-01-12 電磁波検出器、電磁波検出器アレイ及び画像センサ

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JP7341373B1 true JP7341373B1 (ja) 2023-09-08
JPWO2023181593A1 JPWO2023181593A1 (https=) 2023-09-28
JPWO2023181593A5 JPWO2023181593A5 (https=) 2024-02-29

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US (1) US20250185515A1 (https=)
JP (1) JP7341373B1 (https=)
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025163982A1 (ja) * 2024-01-31 2025-08-07 太陽誘電株式会社 光センサおよび光センサの製造方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12468074B2 (en) * 2023-12-20 2025-11-11 Toyota Motor Engineering & Manufacturing North America, Inc. Plasmonic borophene nanoribbon metal-insulator-metal structure for quantum imaging

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180166590A1 (en) * 2014-08-06 2018-06-14 Samsung Electronics Co., Ltd. Photosensor including multiple detection mode and method of operating the same
JP2019121687A (ja) * 2018-01-05 2019-07-22 国立研究開発法人理化学研究所 光電変換素子、光センサ、発電装置、及び光電変換方法
WO2019171622A1 (ja) * 2018-03-06 2019-09-12 三菱電機株式会社 電磁波検出器及びそれを備えた電磁波検出器アレイ
JP2021168332A (ja) * 2020-04-09 2021-10-21 富士通株式会社 光センサ、及びこれを用いた撮像装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180166590A1 (en) * 2014-08-06 2018-06-14 Samsung Electronics Co., Ltd. Photosensor including multiple detection mode and method of operating the same
JP2019121687A (ja) * 2018-01-05 2019-07-22 国立研究開発法人理化学研究所 光電変換素子、光センサ、発電装置、及び光電変換方法
WO2019171622A1 (ja) * 2018-03-06 2019-09-12 三菱電機株式会社 電磁波検出器及びそれを備えた電磁波検出器アレイ
JP2021168332A (ja) * 2020-04-09 2021-10-21 富士通株式会社 光センサ、及びこれを用いた撮像装置

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
CHEN, Y.Y. et al.,Modulation of carrier density in graphene on polycrystalline PZT ceramic,Diamond and Related Materials,2017年,Vol.77,pp.10-15
CHEN, Y.Y. ET AL.: "Modulation of carrier density in graphene on polycrystalline PZT ceramic", DIAMOND AND RELATED MATERIALS, vol. 77, JPN6023007306, 2017, pages 10 - 15, ISSN: 0005120278 *
ZHANG, Yong et al.,Lateral Graphene p-n Junctions Realized by Nanoscale Bipolar Doping Using Surface Electric Dipoles a,ADVANCED MATERIALS INTERFACES,2019年,Vol.6,pp.1801380-1 - 1801380-7
ZHANG, YONG ET AL.: "Lateral Graphene p-n Junctions Realized by Nanoscale Bipolar Doping Using Surface Electric Dipoles a", ADVANCED MATERIALS INTERFACES, vol. 6, JPN6023007307, 2019, pages 1801380 - 1, ISSN: 0005120277 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025163982A1 (ja) * 2024-01-31 2025-08-07 太陽誘電株式会社 光センサおよび光センサの製造方法

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CN118901146A (zh) 2024-11-05
JPWO2023181593A1 (https=) 2023-09-28
US20250185515A1 (en) 2025-06-05

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