JP7316066B2 - Semiconductor device and method for manufacturing semiconductor device - Google Patents

Description

The present invention relates to a semiconductor device and a method for manufacturing a semiconductor device.

2. Description of the Related Art As a semiconductor device, there is known one in which a second semiconductor chip is mounted on a first semiconductor chip via bump electrodes (see, for example, Japanese Unexamined Patent Application Publication No. 2002-200011). In manufacturing such a semiconductor device, bump electrodes are provided on each of the first semiconductor chip and the second semiconductor chip, and the second semiconductor chip is formed on the first semiconductor chip by bonding the bump electrodes to each other. may be implemented.

JP 2017-28216 A

In the manufacturing process as described above, for example, when the second semiconductor chip is warped, the bump electrodes provided on the edge side of the second semiconductor chip are formed before the bump electrodes provided on the central side of the second semiconductor chip. By contacting the bump electrodes of the chip, there is a risk that the bump electrodes will be too crushed (excessively deformed) on the edge side. If the bump electrode is crushed too much, for example, the bump electrode may come into contact with another nearby bump electrode, resulting in a short circuit. Such a situation is particularly likely to occur when bump electrodes are arranged at a narrow pitch. In order to improve reliability, it is required to suppress excessive crushing of the bump electrode. Further, in order to improve reliability, it is also required to increase the bonding strength between the first semiconductor chip and the second semiconductor chip.

An object of the present invention is to provide a semiconductor device with improved reliability and a method of manufacturing such a semiconductor device.

A semiconductor device of the present invention comprises a first element that is one of a support and a semiconductor chip facing each other, a second element that is the other of the support and the semiconductor chip, and a first bump electrode disposed on the first element. , a second bump electrode arranged on the second element and joined to the first bump electrode, and arranged between the first element and the second element, and the gap between the first element and the second element is a spacer defining the a gap extending along a portion of the outer edge of the second element is formed between the facing surface and the second element, and the underfill resin fills the gap getting into

In this semiconductor device, the space between the first element and the second element is defined by the spacer arranged between the first element and the second element. Therefore, even if the semiconductor chip (at least one of the first element and the second element) is warped, for example, when the first bump electrode and the second bump electrode are bonded, the first bump electrode and the second bump Excessive deformation of the electrodes can be suppressed. As a result, good bonding is achieved between the first bump electrode and the second bump electrode. Further, the spacer has a first side surface positioned inside the outer edge of the second element and a facing surface facing the second element, and between the facing surface and the second element, the second A gap is formed that extends along a portion of the outer edge of the two elements, and the underfill resin enters the gap. Since the underfill resin enters the gap between the second element and the spacer, it is possible to improve the bonding strength between the first element and the second element. As described above, according to this semiconductor device, reliability can be improved.

In the semiconductor device of the present invention, the second element may be formed in the shape of a polygonal plate, and part of the outer edge of the second element may form corners of the second element. In this case, the joint strength between the first element and the second element can be effectively improved.

In the semiconductor device of the present invention, the spacer may be L-shaped when viewed from the direction in which the first element and the second element face each other. In this case, the joint strength between the first element and the second element can be improved more effectively.

In the semiconductor device of the present invention, the spacer may have a first portion bonded to the first element and a second portion bonded to the second element and in contact with the first portion. In this case, the above operational effect that the reliability can be improved is remarkably exhibited.

In the semiconductor device of the present invention, the spacer may further have a second side surface continuous with the opposing surface and located outside the outer edge of the second element. In this case, the underfill resin can easily enter the gap, and the bonding strength between the first element and the second element can be improved more effectively.

In the semiconductor device of the present invention, the width of the gap may increase with distance from the second element. In this case, the joint strength between the first element and the second element can be improved more effectively.

In the semiconductor device of the present invention, the underfill resin may enter the gap and be in contact with the first side surface. In this case, the joint strength between the first element and the second element can be improved more effectively.

A semiconductor device of the present invention comprises: a resin frame disposed on the surface of the first element so as to surround the second element when viewed from the direction in which the first element and the second element face each other; and an electrode pad provided on the surface of the first element so as to be positioned at the position of the electrode pad. In this case, the resin frame can prevent the uncured underfill resin from spreading and coming into contact with the electrode pads.

In the semiconductor device of the present invention, a plurality of first bump electrodes are arranged on the first element, a plurality of second bump electrodes are arranged on the second element, and the spacer comprises a plurality of first bump electrodes. It may have at least one of a separation portion arranged to separate the electrodes from each other and a separation portion arranged to separate the plurality of second bump electrodes from each other. In this case, at least one of a short circuit between the first bump electrodes and a short circuit between the second bump electrodes can be suppressed by the separating portion.

A method of manufacturing a semiconductor device according to the present invention comprises a first bump electrode arranged on a first element which is one of a support and a semiconductor chip, and a second bump electrode arranged on a second element which is the other of the support and a semiconductor chip. a first step of bonding the second bump electrode to each other while maintaining a gap between the first element and the second element by a spacer disposed between the first element and the second element; followed by a second step of forming a closed space between the first element and the second element by disposing an underfill resin material along the outer edge of the second element in an environment of the first atmospheric pressure; After the two steps, a third step of filling the closed space with the underfill resin material by disposing to a second atmospheric pressure higher than the first atmospheric pressure and curing the filled underfill resin material; In the above, a spacer having a first side surface positioned inside the outer edge of the second element and an opposing surface facing the second element provides a space between the opposing surface and the second element on one side of the outer edge of the second element. A gap extending along the portion is formed, and in at least one of the second step and the third step, the underfill resin material enters the gap. According to this manufacturing method, it is possible to obtain a semiconductor device whose reliability is improved for the reasons described above.

In the method of manufacturing a semiconductor device according to the present invention, in the first step, the first portion arranged on the first element and the second portion arranged on the second element are brought into contact with each other to form the first portion and the second portion. A spacer may be configured having a second portion. In this case, the above operational effect that the reliability can be improved is remarkably exhibited.

In the method of manufacturing a semiconductor device according to the present invention, in the first step, the first bump electrode and the second bump electrode may contact each other before the first portion and the second portion contact each other. In this case, the first bump electrode and the second bump electrode can be more reliably bonded.

According to the present invention, it is possible to provide a semiconductor device with improved reliability and a method of manufacturing such a semiconductor device.

1 is a perspective view of a semiconductor device according to an embodiment; FIG. 1 is a cross-sectional view of a semiconductor device; FIG. FIG. 3 is a view of the first semiconductor chip and the second semiconductor chip as seen from the second semiconductor chip side; 3 is a cross-sectional view of a first semiconductor chip and a second semiconductor chip; FIG. 3 is a cross-sectional view of the first semiconductor chip and the second semiconductor chip before bonding; FIG. 4 is a cross-sectional view of the first semiconductor chip and the second semiconductor chip before being filled with an underfill resin material; FIG. FIG. 10 is a cross-sectional view of a first semiconductor chip and a second semiconductor chip according to a modification; FIG. 10 is a cross-sectional view of a second bump electrode and spacers according to a modification;

An embodiment of the present invention will be described in detail below with reference to the drawings. In the following description, the same reference numerals are used for the same or corresponding elements, and overlapping descriptions are omitted.
[Structure of semiconductor device]

As shown in FIGS. 1 and 2, the semiconductor device 1 includes a support substrate 10, a first semiconductor chip (first element, support, substrate with bumps) 20, and a second semiconductor chip (second element, support). body) 30; The semiconductor device 1 is, for example, a back-illuminated area image sensor or linear image sensor. The first semiconductor chip 20 is, for example, a CMOS readout circuit (ROIC: readout integrated circuit). The second semiconductor chip 30 is, for example, an InGaAs photodiode array. The first semiconductor chip 20 and the second semiconductor chip 30 are bonded together by flip chip bonding.

The support substrate 10 is a substrate that supports the first semiconductor chip 20 and the second semiconductor chip 30 . A plurality of electrode pads 11 are provided on the surface 10 a of the support substrate 10 .

The first semiconductor chip 20 is a semiconductor chip in which a circuit section 22 is built in a portion of a semiconductor substrate 21 on the side of the front surface 21a. The first semiconductor chip 20 is arranged on the surface 10 a of the support substrate 10 . The circuit section 22 includes a plurality of electrode pads 23 and a plurality of electrode pads 24 provided on the surface 21a. The corresponding electrode pads 23 and electrode pads 24 are electrically connected to each other through wiring built into the semiconductor substrate 21 . Each electrode pad 23 is electrically connected to the electrode pad 11 of the support substrate 10 via the wire 5 . The semiconductor substrate 21 is formed, for example, in a rectangular plate shape.

The second semiconductor chip 30 is a semiconductor chip in which a light receiving portion 32 is built in a portion of a semiconductor substrate 31 on the side of the surface 31a. The light receiving section 32 includes a plurality of pixels 33 composed of photodiodes. Each pixel 33 is electrically connected to an electrode pad 34 provided on the surface 31a. The semiconductor substrate 31 is formed in, for example, a rectangular plate shape.

The second semiconductor chip 30 faces the first semiconductor chip 20 with a gap therebetween. A plurality of electrode pads 24 provided on the surface 21a of the semiconductor substrate 21 and a plurality of electrode pads provided on the surface 31a of the semiconductor substrate 31 in the facing direction A in which the first semiconductor chip 20 and the second semiconductor chip 30 face each other. 34 faces one-on-one. The electrode pads 24 and electrode pads 34 facing each other are electrically connected via the first bump electrode 41 and the second bump electrode 51 .

The first semiconductor chip 20 and the second semiconductor chip 30 will be further described with reference to FIGS. 3 to 6. FIG. As shown in FIG. 3, the first semiconductor chip 20 (semiconductor substrate 21) is larger than the second semiconductor chip 30 (semiconductor substrate 31) when viewed from the facing direction A. As shown in FIG. The size of each of the first semiconductor chip 20 and the second semiconductor chip 30 when viewed from the opposing direction A is, for example, approximately 10 to 20 mm×10 to 20 mm. Each thickness of the first semiconductor chip 20 and the second semiconductor chip 30 is, for example, about several hundred μm.

A plurality of first bump electrodes 41 are arranged on the surface 21 a of the semiconductor substrate 21 . The first bump electrode 41 is arranged, for example, within a rectangular region R shown in FIG. Although only two first bump electrodes 41 are shown in FIGS. 4 to 6 for convenience of explanation, a large number of first bump electrodes 41 are actually arranged.

The first bump electrodes 41 are arranged, for example, in a grid pattern (matrix pattern). The number of first bump electrodes 41 is approximately equal to the number of pixels 33 . The first bump electrodes 41 are arranged, for example, in 640 rows and 512 columns or 1280 rows and 1024 columns. The center-to-center distance between adjacent first bump electrodes 41 is, for example, about 10 μm to 20 μm. The first bump electrode 41 is made of, for example, indium (In), but may be made of SbAgCu (tin-silver-copper) solder or gold (Au).

The first bump electrode 41 is composed of, for example, four columnar bumps 42 arranged adjacent to each other. The four columnar bumps 42 are arranged, for example, at four corners of an imaginary quadrangle when viewed from the facing direction A, respectively. Each columnar bump 45 is formed, for example, in a substantially truncated quadrangular pyramid shape.

A plurality of second bump electrodes 51 are arranged on the surface 31 a of the semiconductor substrate 31 . The second bump electrode 51 is composed of, for example, one columnar bump having a substantially truncated cone shape. The outer surface of the second bump electrode 51 is inclined so that the second bump electrode 51 is tapered. The second bump electrode 51 is made of, for example, the same metal material as the first bump electrode 41 .

The plurality of second bump electrodes 51 are bonded to the plurality of first bump electrodes 41 respectively. That is, one first bump electrode 41 and one second bump electrode 51 are bonded to each other. The first bump electrode 41 and the second bump electrode 51 are bonded to each other, for example, by thermocompression bonding. In this example, the second bump electrode 51 is arranged between four columnar bumps 42 forming the first bump electrode 41 and joined to the first bump electrode 41 .

The semiconductor device 1 further includes four spacers 60 , an underfill resin 70 and a resin frame 80 . Each spacer 60 is arranged between the first semiconductor chip 20 and the second semiconductor chip 30 and defines the spacing between the first semiconductor chip 20 and the second semiconductor chip 30 . The distance between the first semiconductor chip 20 and the second semiconductor chip 30 is, for example, about 3 μm.

The four spacers 60 are arranged at the corners of the semiconductor substrate 31, respectively. In this example, each spacer 60 is formed in an L shape when viewed from the facing direction A, and has two side portions forming corner portions of the semiconductor substrate 31 (corner portions of the second semiconductor chip 30). are placed along the These side portions are part of the outer edge 31b of the semiconductor substrate 31 (the outer edge of the second semiconductor chip 30). Each spacer 60 is arranged outside the region R where the first bump electrode 41 and the second bump electrode 51 are arranged. The “outside” is the side where the outer edge 31b is located with respect to the center of the semiconductor substrate 31 when viewed from the facing direction A, and the “inner side” is the side where the outer edge 31b is positioned when viewed from the facing direction A. This is the side where the center of the semiconductor substrate 31 is located with respect to 31b.

One spacer 60 will be described below, but the other spacers 60 have the same configuration as the one spacer 60 concerned. 1 and 2, illustration of the spacer 60, the underfill resin 70, etc. is omitted.

The spacer 60 has a first portion 61 bonded to the surface 21 a of the semiconductor substrate 21 and a second portion 62 bonded to the surface 31 a of the semiconductor substrate 31 . Each of the first portion 61 and the second portion 62 is formed in an L shape when viewed from the opposing direction A. As shown in FIG. Each of the first portion 61 and the second portion 62 is formed in layers from a resin material such as polyimide, for example.

The first portion 61 is arranged along two sides forming corners of the semiconductor substrate 31 . The first portion 61 includes a portion located outside the outer edge 31b of the semiconductor substrate 31 and a portion located inside the outer edge 31b when viewed from the facing direction A. As shown in FIG. That is, the first portion 61 is arranged so as to straddle the inner side and the outer side of the outer edge 31b when viewed from the facing direction A. As shown in FIG. The thickness of the first portion 61 is, for example, about 1.5 μm.

The second portion 62 is arranged along the two sides forming the corners of the semiconductor substrate 31 . The second portion 62 is arranged along the outer edge 31b of the semiconductor substrate 31 at a predetermined distance from the outer edge 31b. That is, the second portion 62 is arranged slightly inside the outer edge 31b. The thickness of the second portion 62 is, for example, about 1.5 μm. The second portion 62 overlaps the first portion 61 when viewed from the facing direction A. As shown in FIG. The second portion 62 is in contact with the first portion 61 .

The spacer 60 has a first side surface 63 positioned inside the outer edge 31b of the semiconductor substrate 31, a facing surface 64 facing the surface 31a of the semiconductor substrate 31, and a second side surface 65 positioned outside the outer edge 31b. have. The first side surface 63 is configured by the second portion 62 and extends along the opposing direction A. As shown in FIG. In this example, the first side surface 63 is inclined inwardly as the distance from the semiconductor substrate 31 increases, and is convexly curved toward the side opposite to the semiconductor substrate 31 . The facing surface 64 is configured by the first portion 61, continues to the first side surface 63, and extends in a direction perpendicular to the facing direction A. As shown in FIG. The second side surface 65 is configured by the first portion 61, continues to the facing surface 64, and extends along the facing direction A. As shown in FIG. In this example, the second side surface 65 is inclined inwardly as the distance from the semiconductor substrate 21 increases, and is convexly curved toward the side opposite to the semiconductor substrate 21 .

A gap G is formed between the facing surface 64 and the surface 31 a of the semiconductor substrate 31 . Gap G is defined by surface 31 a , first side surface 63 and opposing surface 64 . The gap G extends along the two sides forming the corners of the semiconductor substrate 31 and is substantially L-shaped when viewed from the opposing direction A. As shown in FIG. In this example, the width of the gap G (that is, the distance from the outer edge 31 b of the semiconductor substrate 31 to the first side surface 63 ) increases with distance from the semiconductor substrate 31 .

Gap G extends into each opening P formed between semiconductor substrate 21 and semiconductor substrate 31 by two spacers 60 adjacent to each other. In other words, a gap W is formed between the facing surface 64 and the surface 31a of the semiconductor substrate 31 in the opening P. As shown in FIG. Gap W is defined by surface 31 a , first side surface 63 and opposing surface 64 .

The underfill resin 70 is arranged between the first semiconductor chip 20 and the second semiconductor chip 30 . Specifically, the underfill resin 70 fills the space S formed between the semiconductor substrate 21 and the semiconductor substrate 31 . The underfill resin 70 enters the gap W. The underfill resin 70 has a fillet portion 71 arranged along the outer edge 31b of the semiconductor substrate 31 outside the outer edge 31b of the semiconductor substrate 31 when viewed from the facing direction A. As shown in FIG. Fillet portion 71 is provided so as to surround semiconductor substrate 31 .

The fillet portion 71 extends over the side surface 31 c of the semiconductor substrate 31 . The fillet portion 71, for example, extends from the front surface 31a of the semiconductor substrate 31 to the side surface 31c by several hundred μm. The fillet portion 71 is connected to the underfill resin 70 filled in the space S through an opening P formed between the semiconductor substrates 21 and 31 by two adjacent spacers 60 .

As shown in FIG. 4, the fillet portion 71 enters the gap G. As shown in FIG. In this example, the underfill resin 70 enters the gap G so as to fill the entire gap G and contacts the first side surface 63 (reaches the first side surface 63).

The resin frame 80 is arranged on the surface 21 a of the first semiconductor chip 20 so as to surround the second semiconductor chip 30 when viewed from the facing direction A. As shown in FIG. The resin frame 80 is formed in layers from the same resin material as the spacer 60, for example. The resin frame 80 is formed in, for example, a rectangular frame shape. The underfill resin 70 runs over the resin frame 80 . The electrode pads 23 described above are provided outside the resin frame 80 .
[Method for manufacturing a semiconductor device]

The first bump electrodes 41 arranged on the first semiconductor chip 20 and the second bump electrodes 51 arranged on the second semiconductor chip 30 are interposed between the first semiconductor chip 20 and the second semiconductor chip 30. The first semiconductor chip 20 and the second semiconductor chip 30 are bonded to each other while maintaining a space between them by the arranged spacers 60 (first step, FIGS. 5 and 6). In the first step, the first bump electrode 41 and the second bump electrode 51 are bonded by, for example, thermocompression bonding.

In the first step, the first portion 61 arranged on the first semiconductor chip 20 and the second portion 62 arranged on the second semiconductor chip 30 are brought into contact with each other so that the first portion 61 and the second portion A spacer 60 having 62 is constructed. As described above, between the first semiconductor chip 20 and the second semiconductor chip 30, the spacer 60 forms the gap G extending along the two sides forming the corners of the second semiconductor chip 30. be done.

In the first step, the first bump electrode 41 and the second bump electrode 51 are brought into contact before the first portion 61 and the second portion 62 are brought into contact. Before bonding the first bump electrode 41 and the second bump electrode 51, the height of the first bump electrode 41 (columnar bump 45) is, for example, about 2 μm, and the height of the second bump electrode 51 is, for example, about 5 μm. is. Before bonding, the height of the first bump electrode 41 is higher than the height of the first portion 61 of the spacer 60 , and the height of the second bump electrode 51 is higher than the height of the second portion 62 of the spacer 60 .

Subsequently, the underfill resin 70 is placed between the first semiconductor chip 20 and the second semiconductor chip 30 by vacuum filling. First, by arranging the underfill resin material along the outer edge 31b of the second semiconductor chip 30 in a vacuum environment (environment of pressure lower than atmospheric pressure maintained at a predetermined degree of vacuum) (environment of first atmospheric pressure) , forming a closed space between the first semiconductor chip 20 and the second semiconductor chip 30 (second step). The underfill resin material is supplied using, for example, a dispenser. The underfill resin material is arranged so as to close the opening P formed between the first semiconductor chip 20 and the second semiconductor chip 30 by two spacers 60 adjacent to each other.

Subsequently, the vacuum environment is released to the atmospheric pressure, so that the first semiconductor chip 20 and the second semiconductor chip 30 with the closed space formed therebetween by the underfill resin material are arranged in the atmospheric pressure environment. The closed space is filled with the underfill resin material by this placement in the atmospheric pressure environment (placement in the second pressure higher than the first pressure). Subsequently, the filled underfill resin material is cured to form the underfill resin 70, and the underfill resin 70 is arranged between the first semiconductor chip 20 and the second semiconductor chip 30 (third step). After the third step, the first semiconductor chip 20 and the second semiconductor chip 30 are mounted on the support substrate 10 . The semiconductor device 1 is obtained by the above steps.

In the second step, part of the underfill resin material arranged along the outer edge 31b of the second semiconductor chip 30 enters the gap G due to capillary action. That is, the width of the gap G formed in the first step is narrowed to such an extent that part of the underfill resin material enters the gap G by capillary action in the second step. The underfill resin material may enter the gap G by capillary action after placement in the atmospheric pressure environment in the third step. The underfill resin material may enter the gap G by capillary action during curing in the third step. That is, the underfill resin material should just enter the gap G in at least one of the second step and the third step. In the semiconductor device 1 of this embodiment, the first side surface 63 of the spacer 60 is inclined and curved (it is a curved surface), and the width of the gap G becomes wider as the distance from the semiconductor substrate 31 increases. That is, the gap G becomes narrower toward the inner part of the gap G (the boundary between the first side surface 63 and the opposing surface 64). Therefore, capillarity is likely to occur, and the resin is likely to be filled up to the innermost part of the gap G. As shown in FIG. In addition, since the second side surface 65 is curved and inclined, a capillary phenomenon is likely to occur, and the resin can be easily filled into the deep part of the gap.
[Effect]

In the semiconductor device 1 , the space between the first semiconductor chip 20 and the second semiconductor chip 30 is defined by the spacer 60 arranged between the first semiconductor chip 20 and the second semiconductor chip 30 . Therefore, even if the second semiconductor chip 30 is warped, for example, the first bump electrode 41 and the second bump electrode 51 are excessively deformed when the first bump electrode 41 and the second bump electrode 51 are joined together. can be suppressed. As a result, good bonding is achieved between the first bump electrode and the second bump electrode. Further, the spacer 60 has a first side surface 63 positioned inside the outer edge 31b of the second semiconductor chip 30 and a facing surface 64 facing the second semiconductor chip 30. The facing surface 64 and the second A gap G extending along a part of the outer edge 31b of the second semiconductor chip 30 is formed between it and the semiconductor chip 30, and the underfill resin 70 enters the gap G. As shown in FIG. Since the underfill resin 70 enters the gap G between the second semiconductor chip 30 and the spacer 60, the bonding strength between the first semiconductor chip 20 and the second semiconductor chip 30 can be improved. As described above, the reliability of the semiconductor device 1 can be improved.

A gap G is arranged along two sides forming corners of the second semiconductor chip 30 . Thereby, the bonding strength between the first semiconductor chip 20 and the second semiconductor chip 30 can be effectively increased.

The spacer 60 is formed in an L shape when viewed from the opposing direction A. As shown in FIG. Thereby, the bonding strength between the first semiconductor chip 20 and the second semiconductor chip 30 can be improved more effectively. Moreover, since the spacers 60 are arranged along the two sides forming the corners of the second semiconductor chip 30, warping of the second semiconductor chip 30 can be effectively suppressed. Furthermore, the area of the region R in which the first bump electrode 41 and the second bump electrode 51 are arranged can be increased.

A spacer 60 has a first portion 61 bonded to the first semiconductor chip 20 and a second portion 62 bonded to the second semiconductor chip 30 and in contact with the first portion 61 . In the semiconductor device 1, since the underfill resin 70 enters the gap G, the contact portion between the first portion 61 and the second portion 62 can be strengthened.

The spacer 60 has a second side surface 65 that continues to the opposing surface 64 and is located outside the outer edge 31 b of the second semiconductor chip 30 . As a result, the underfill resin 70 can easily enter the gap G, and the bonding strength between the first semiconductor chip 20 and the second semiconductor chip 30 can be improved more effectively.

The width of the gap G increases with distance from the second semiconductor chip 30 . Thereby, the bonding strength between the first semiconductor chip 20 and the second semiconductor chip 30 can be improved more effectively. A gap W is formed between the facing surface 64 and the surface 31a of the semiconductor substrate 31 in the opening P, and the underfill resin 70 enters the gap W. As shown in FIG. This makes it easier for the underfill resin material to enter the gap W, so that the bonding strength between the first semiconductor chip 20 and the second semiconductor chip 30 can be improved more effectively.

The underfill resin 70 enters the gap G and contacts the first side surface 63 . The underfill resin 70 fills the entire gap G. Thereby, the bonding strength between the first semiconductor chip 20 and the second semiconductor chip 30 can be improved more effectively.

The semiconductor device 1 includes a resin frame 80 arranged on the front surface 21a of the first semiconductor chip 20 so as to surround the second semiconductor chip 30 when viewed from the facing direction A, and a resin frame 80 positioned outside the resin frame 80 so as to surround the second semiconductor chip 30. and electrode pads 23 provided on the surface 21a. Accordingly, the resin frame 80 can prevent the uncured underfill resin 70 (underfill resin material) from spreading on the surface 21 a and contacting the electrode pads 23 . That is, even when the underfill resin material spreads and reaches the resin frame 80, the surface tension prevents the underfill resin material from further spreading.

The height of the resin frame 80 is lower than the height of the second semiconductor chip 30 . This can prevent the underfill resin material from running over the second semiconductor chip 30 . The underfill resin 70 runs over the resin frame 80. - 特許庁This makes it easier for the fillet portion 71 to creep up on the side surface 31c of the semiconductor substrate 31, so that the bonding strength between the first semiconductor chip 20 and the second semiconductor chip 30 can be improved more effectively. In the semiconductor device 1 , the underfill resin material is arranged so that the underfill resin material rides on the resin frame 80 .
[Modification]

A spacer 60A of the first modified example shown in FIGS. The first separating portion 66 is provided so as to separate the plurality of second bump electrodes 51 from each other. The spacer 60</b>A has a structure in which the four spacers 60 of the above-described embodiment are joined together by the first separating portion 66 . According to such a first modified example, reliability can be improved as in the above-described embodiment. Furthermore, the first separation portion 66 can prevent the second bump electrodes 51 from being short-circuited. In the first modification, the spacer 60A may further include a second separating portion arranged on the surface 21a of the semiconductor substrate 21 so as to separate the plurality of first bump electrodes 41 from each other. The spacer 60A may not include the first separation portion 66 and may include only the second separation portion. That is, the spacer 60A may have at least one of the first separating portion and the second separating portion.

As another modification, the spacer 60 may be arranged along a part of the outer edge 31b of the second semiconductor chip 30, for example, along a side portion of the second semiconductor chip 30 that does not constitute a corner portion. may be In this case, the gap G also extends along the side. Such a modified example can also improve reliability in the same manner as the above-described embodiment. At least one spacer 60 should be provided, and the number of spacers 60 is not limited.

Although the first portion 61 and the second portion 62 forming the spacer 60 are not joined in the above embodiment, they may be joined. In the above-described embodiment, the spacer 60 is configured by contacting the first portion 61 and the second portion 62 which are separately formed. may have been In this case, the spacer 60 may be bonded to one of the first semiconductor chip 20 and the second semiconductor chip 30 and not bonded to the other. However, if the first portion 61 and the second portion 62 are configured separately, even if the first semiconductor chip 20 or the second semiconductor chip 30 before bonding is dropped, the first portion 61 or the second semiconductor chip 30 may be dropped. The second portion 62 can protect the first bump electrode 41 or the second bump electrode 51 .

The material and shape of each element are not limited to the materials and shapes described above, and various materials and shapes can be adopted. For example, the first bump electrode 41 may be composed of one columnar bump. The second side surface 65 of the spacer 60 may be positioned inside the outer edge 31 b of the second semiconductor chip 30 . That is, the outer portion of the facing surface 64 may be inclined inwardly as the distance from the semiconductor substrate 21 increases, and may be convexly curved toward the side opposite to the semiconductor substrate 21 . In this case as well, capillary action is likely to occur, and the gap G is easily filled with the resin to the depths thereof. The underfill resin 70 only needs to enter the gap G, and does not have to be in contact with the first side surface 63 . In the above embodiments, the support of the present invention is the first semiconductor chip 20 or the second semiconductor chip 30, but the support may be a wiring board, an electronic component, or the like. In the above embodiment, the first element of the present invention is the first semiconductor chip 20, and the second element is the second semiconductor chip 30. It may also be a structured support. The first bump electrode 41 may be arranged on the support and the second bump electrode 51 may be arranged on the semiconductor chip, or the second bump electrode 51 may be arranged on the support and the semiconductor chip. , the first bump electrode 41 may be arranged.

In the method for manufacturing the semiconductor device 1 described above, the second step is performed in a vacuum environment and the third step is performed in an atmospheric pressure environment. If it is performed in an environment of a second atmospheric pressure higher than the first atmospheric pressure, the pressure difference between the inside and outside of the closed space formed between the first semiconductor chip 20 and the second semiconductor chip 30 by the underfill resin material causes the closed space to close. An underfill resin material can be advanced into the space.

DESCRIPTION OF SYMBOLS 1... Semiconductor device 20... First semiconductor chip (first element, support) 21a... Surface 23... Electrode pad 30... Second semiconductor chip (second element, support) 31b... Outer edge 41... First bump electrode 51 Second bump electrode 60, 60A Spacer 61 First portion 62 Second portion 63 First side 64 Opposite side 65 Second side 66 Second 1 Separation Part 70 Underfill resin 80 Resin frame A Opposing direction G Gap

Claims (12)

a first element being one of a support and a semiconductor chip facing each other;
a second element that is the other of the support and the semiconductor chip;
a first bump electrode disposed on the first element;
a second bump electrode disposed on the second element and bonded to the first bump electrode;
a spacer disposed between the first element and the second element and defining a spacing between the first element and the second element;
an underfill resin disposed between the first element and the second element;
the width of the spacer is greater than the height of the spacer;
The spacer has a first side facing outward and located inside the outer edge of the second element, and a first side located outside the first side and facing the second element. and a gap extending along a portion of the outer edge of the second element is formed between the facing surface and the second element, the gap being the a length extending along a portion of the outer edge of the second element is greater than the width of the spacer;
The semiconductor device, wherein the underfill resin fills the gap. The second element is formed in a polygonal plate shape,
2. The semiconductor device according to claim 1, wherein said part of said outer edge of said second element constitutes a corner of said second element. 3. The semiconductor device according to claim 1, wherein said spacer is formed in an L shape when viewed from a facing direction in which said first element and said second element face each other. 4. The spacer according to any one of claims 1 to 3, wherein said spacer has a first portion joined to said first element and a second portion joined to said second element and in contact with said first portion. 1. The semiconductor device according to claim 1. 5. The semiconductor device according to claim 1, wherein said spacer further has a second side surface continuous with said facing surface and positioned outside said outer edge of said second element. 6. The semiconductor device according to claim 1, wherein the width of said gap increases with increasing distance from said second element. 7. The semiconductor device according to claim 1, wherein said underfill resin enters said gap and contacts said first side surface. a resin frame arranged on the surface of the first element so as to surround the second element when viewed from the direction in which the first element and the second element face each other;
8. The semiconductor device according to claim 1, further comprising an electrode pad provided on said surface of said first element so as to be positioned outside said resin frame. A plurality of the first bump electrodes are arranged on the first element,
A plurality of the second bump electrodes are arranged on the second element,
The spacer has at least one of a separation portion arranged to separate the plurality of first bump electrodes and a separation portion arranged to separate the plurality of second bump electrodes. The semiconductor device according to any one of claims 1 to 8, comprising: A first bump electrode arranged on a first element that is one of a support and a semiconductor chip, and a second bump electrode arranged on a second element that is the other of the support and the semiconductor chip, a first step of joining the first element and the second element together while maintaining a distance between the first element and the second element by a spacer disposed between the first element and the second element;
After the first step, a closed space is formed between the first element and the second element by arranging an underfill resin material along the outer edge of the second element in an environment of a first atmospheric pressure. a second step of
a third step of, after the second step, filling the closed space with the underfill resin material by placing the closed space at a second atmospheric pressure higher than the first atmospheric pressure and curing the filled underfill resin material; with
the width of the spacer is greater than the height of the spacer;
In the first step, the first side surface facing outward and located inside the outer edge of the second element and the second element located outside the first side surface a gap extending along a portion of the outer edge of the second element is formed between the facing surface and the second element by the spacer having a facing surface facing the a length extending along a portion of the outer edge of the second element is greater than the width of the spacer;
In at least one of the second step and the third step, the method of manufacturing a semiconductor device, wherein the underfill resin material enters the gap. In the first step, the first portion arranged on the first element and the second portion arranged on the second element are brought into contact to form the first portion and the second portion. 11. The method of manufacturing a semiconductor device according to claim 10, wherein said spacer is formed. 12. The method of manufacturing a semiconductor device according to claim 11, wherein in said first step, said first bump electrode and said second bump electrode are brought into contact with each other before said first portion and said second portion are brought into contact with each other.

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