JP7313851B2 - 共鳴プロセスモニタ - Google Patents
共鳴プロセスモニタ Download PDFInfo
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- JP7313851B2 JP7313851B2 JP2019048400A JP2019048400A JP7313851B2 JP 7313851 B2 JP7313851 B2 JP 7313851B2 JP 2019048400 A JP2019048400 A JP 2019048400A JP 2019048400 A JP2019048400 A JP 2019048400A JP 7313851 B2 JP7313851 B2 JP 7313851B2
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 1
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- 229910052782 aluminium Inorganic materials 0.000 description 3
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- 229910018514 Al—O—N Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910007733 Zr—O—N Inorganic materials 0.000 description 2
- 150000002222 fluorine compounds Chemical class 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
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- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
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- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
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- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
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- Drying Of Semiconductors (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
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Description
Claims (16)
- 共鳴プロセスモニタであって、
第1の開口及び第2の開口を備えたフレーム、
前記フレームの前記第1の開口を密封する共鳴体であって、前記共鳴体の第1の表面上の第1の電極が、前記フレームに接触し、第2の電極が、前記共鳴体の第2の表面上にあり、前記第2の電極のみが前記共鳴体の前記第2の表面に接触する、共鳴体、及び
前記フレームの前記第2の開口を密封する背板であって、前記フレームに機械的に連結され且つ前記フレームから電気的に隔離された背板
を備え、前記共鳴体、前記背板、及び前記フレームの内部表面が、空洞を画定し、前記第2の電極と、前記共鳴体の前記第2の表面の一部と、前記共鳴体の側面とが、前記空洞に露出される、共鳴プロセスモニタ。 - 前記第1の電極の少なくとも一部の上にバリア層をさらに含み、前記バリア層が、耐エッチングコーティングである、請求項1に記載の共鳴プロセスモニタ。
- 前記バリア層が、Y2O3、Al2O3、HfO2、ZrO2、La2O3のうちの1つ又は複数、若しくはこれらの組み合わせ、又はY-O-N、Al-O-N、Hf-O-N、Zr-O-N、La-O-N、若しくはこれらの組み合わせの窒化物、又はY-O-F、Al-O-F、Hf-O-F、Zr-O-F、La-O-F、若しくはこれらの組み合わせのフッ化物、又はAlN、又は1つ若しくは複数のバリア層材料の積層体を含む、請求項2に記載の共鳴プロセスモニタ。
- 前記バリア層が、前記フレームの前記第1の開口を通して視認可能な前記第1の電極の全体を覆う、請求項2に記載の共鳴プロセスモニタ。
- 前記バリア層が、前記フレームの部分の上に形成される、請求項4に記載の共鳴プロセスモニタ。
- 前記空洞が密閉されている、請求項1に記載の共鳴プロセスモニタ。
- 前記背板から前記第2の電極へと延びる接触アセンブリをさらに含み、前記接触アセンブリに沿った軸力が前記第2の電極に加えられる、請求項1に記載の共鳴プロセスモニタ。
- 前記軸力が10N未満である、請求項7に記載の共鳴プロセスモニタ。
- 前記軸力が、前記第1の電極を前記フレームに対して固定させる、請求項7に記載の共鳴プロセスモニタ。
- 前記第1の電極が、前記フレームに拡散接合される、請求項1に記載の共鳴プロセスモニタ。
- 処理ツールであって、
チャンバ、
サセプタ、
前記サセプタの周りの端部リング、及び
共鳴プロセスモニタであって、
第1の開口及び第2の開口を備えたフレームと、
前記フレームの前記第1の開口を密封する共鳴体であって、前記共鳴体の第1の表面上の第1の電極が、前記フレームに接触し、第2の電極が、前記共鳴体の第2の表面上にあり、前記第2の電極のみが前記共鳴体の前記第2の表面に接触する、共鳴体と、
前記フレームの前記第2の開口を密封する背板であって、前記フレームに機械的に連結され且つ前記フレームから電気的に隔離された背板と
を備え、前記共鳴体、前記背板、及び前記フレームの内部表面が、空洞を画定し、前記第2の電極と、前記共鳴体の前記第2の表面の一部と、前記共鳴体の側面とが、前記空洞に露出される、共鳴プロセスモニタ
を備えている処理ツール。 - 前記共鳴プロセスモニタが、前記第1の電極の少なくとも一部の上にバリア層をさらに含む、請求項11に記載の処理ツール。
- 前記共鳴プロセスモニタが、前記端部リング内に一体化されている、請求項11に記載の処理ツール。
- 前記共鳴プロセスモニタが、前記チャンバの壁内に一体化されている、請求項11に記載の処理ツール。
- 共鳴プロセスモニタを形成する方法であって、
共鳴体の第1の表面上の第1の電極をフレームと接触させることであって、前記共鳴体が、前記フレームにおける第1の開口を密封する、フレームと接触させることと、
接触アセンブリの第1の端部を前記共鳴体の第2の表面上の第2の電極と接触させることであって、前記第2の電極のみが前記共鳴体の前記第2の表面に接触し、前記接触アセンブリの第2の端部が、背板によって支持されている、前記共鳴体上の第2の電極と接触させることと、
前記フレームに前記背板を固定することであって、前記背板が、前記フレームにおける第2の開口を密封し、前記背板が前記フレームから電気的に隔離され、前記共鳴体、前記背板、及び前記フレームの内部側壁が、空洞を画定し、前記第2の電極と、前記共鳴体の前記第2の表面の一部と、前記共鳴体の側面とが、前記空洞に露出される、前記背板を固定することと、
前記第1の電極の少なくとも一部の上にバリア層を形成することと
を含む方法。 - 前記フレーム又はグランドに電気的に連結される第1の端子と、前記背板に電気的に連結される第2の端子と、を有する周波数ブリッジ、をさらに備え、
前記第2の電極が前記背板に電気的に連結される、
請求項1に記載の共鳴プロセスモニタ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US15/925,739 US11551905B2 (en) | 2018-03-19 | 2018-03-19 | Resonant process monitor |
US15/925,739 | 2018-03-19 |
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JP2019197884A JP2019197884A (ja) | 2019-11-14 |
JP7313851B2 true JP7313851B2 (ja) | 2023-07-25 |
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US (1) | US11551905B2 (ja) |
JP (1) | JP7313851B2 (ja) |
KR (1) | KR20190110052A (ja) |
CN (1) | CN110289228A (ja) |
TW (1) | TWI801525B (ja) |
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US20230360889A1 (en) * | 2022-05-03 | 2023-11-09 | Tokyo Electron Limited | Apparatus for Edge Control During Plasma Processing |
US12020915B1 (en) * | 2024-01-16 | 2024-06-25 | King Faisal University | Resonant frequency shift as etch stop of gate oxide of MOSFET transistor |
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KR20190110052A (ko) | 2019-09-27 |
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US11551905B2 (en) | 2023-01-10 |
TW202004946A (zh) | 2020-01-16 |
TWI801525B (zh) | 2023-05-11 |
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