JP7308885B2 - 音響操作を用いるマイクロ流体デバイスおよびシステム - Google Patents
音響操作を用いるマイクロ流体デバイスおよびシステム Download PDFInfo
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Description
この出願は、2015年6月25日に出願された米国仮特許出願第62/184,526号への優先権及び利益を請求し、その開示はその全体において参照によって本明細書に組み込まれる。
Claims (7)
- マイクロ流体粒子処理チップアセンブリであって、
基板と;
前記基板において形成された流路であって、前記流路が、
前記流路内で粒子の流れを集束するための集束領域;
前記集束領域の少なくとも部分的に下流の検査領域;及び、
前記検査領域の少なくとも部分的に下流のスイッチング領域;
を有する、流路と;
前記集束領域における前記流路において表面音響波を生成するように前記流路の第1の側面に隣接した集束表面音響波発生器と;
前記集束表面音響波発生器の反対側の前記流路の第2の側面に隣接した前記集束領域に位置する音響波反射素子と;
前記基板の上に形成された減衰素子であって、前記減衰素子が、前記集束表面音響波発生器と関連し、且つ、前記減衰素子が、前記基板を通る前記表面音響波の伝送を減衰するように構成されている、減衰素子と;
を備えることを特徴とするマイクロ流体粒子処理チップアセンブリ。 - 前記音響波反射素子は、前記流路の壁内に直接組み込まれることを特徴とする請求項1に記載のマイクロ流体粒子処理チップアセンブリ。
- 前記集束表面音響波発生器は、嵌合変換器(IDT)を含むことを特徴とする請求項1に記載のマイクロ流体粒子処理チップアセンブリ。
- 前記IDTは、先細IDTであることを特徴とする請求項3に記載のマイクロ流体粒子処理チップアセンブリ。
- 前記スイッチング領域と関連し、前記基板において表面音響波と、前記流路の前記スイッチング領域の流れにおいて圧力パルスと、を生成するスイッチング表面音響波発生器をさらに備えることを特徴とする請求項3に記載のマイクロ流体粒子処理チップアセンブリ。
- 前記基板は、圧電材料層をさらに備え、前記集束表面音響波発生器が前記圧電材料層の上にあることを特徴とする請求項1に記載のマイクロ流体粒子処理チップアセンブリ。
- 前記流路は、前記基板において形成された複数の流路の1つであり、前記複数の流路それぞれは、
前記流路内で粒子の流れを集束するための集束領域;
前記集束領域の少なくとも部分的に下流の検査領域;及び、
前記検査領域の少なくとも部分的に下流のスイッチング領域;
を有し、
前記集束表面音響波発生器は、複数の集束表面音響波発生器の1つであり、各集束表面音響波発生器は、前記集束領域におけるそれぞれの流路において表面音響波を生成するように前記複数の流路のそれぞれの第1の側面に隣接しており、
前記音響波反射素子は、前記集束表面音響波発生器それぞれの反対側の前記複数の流路における各流路の第2の側面に隣接して位置することを特徴とする請求項1に記載のマイクロ流体粒子処理チップアセンブリ。
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