JP7308254B2 - holding device - Google Patents

Description

The technology disclosed in this specification relates to a holding device that holds an object.

For example, an electrostatic chuck is used as a holding device for holding a wafer when manufacturing semiconductors. The electrostatic chuck comprises: a ceramic member having a substantially planar surface (hereinafter referred to as "adsorption surface") substantially perpendicular to a predetermined direction (hereinafter referred to as "first direction"); and a ceramic member provided inside the ceramic member. The wafer is attracted to and held by the attraction surface of the ceramic member using electrostatic attraction generated by applying a voltage to the chuck electrode. In such an electrostatic chuck, a plurality of protrusions are formed on the attracting surface of the ceramic member, and the semiconductor wafer is supported by the plurality of protrusions. Further, heat is transferred between the ceramic member and the semiconductor wafer through the gas present between the adsorption surface of the ceramic member and the semiconductor wafer (see Patent Documents 1 and 2 below).

If the temperature of the wafer held on the attraction surface of the electrostatic chuck does not reach the desired temperature, the precision of each process (film formation, etching, etc.) on the wafer may decrease. The ability to control the distribution is required.

WO2014/156619 JP-A-2002-222851

In an electrostatic chuck including a ceramic member having a plurality of protrusions formed on its attracting surface, there may be a high temperature or low temperature singular point due to, for example, the internal structure of the ceramic member. Therefore, in the conventional electrostatic chuck, there is room for improvement in terms of controllability of the temperature distribution of the attracting surface of the ceramic member (and thus controllability of the temperature distribution of the wafer).

Such a problem is not limited to an electrostatic chuck that holds a wafer using electrostatic attraction. This is a problem common to holding devices in general.

This specification discloses a technology capable of solving at least part of the above-described problems.

The technology disclosed in this specification can be implemented as the following modes.

(1) A holding device disclosed in the present specification includes a ceramic member having a substantially planar first surface substantially perpendicular to a first direction and having a plurality of protrusions formed on the first surface. In the holding device for holding an object on the first surface of the ceramic member, the first surfaces of the ceramic member are positioned at mutually different positions and have the same number (two or more) of A first surface region and a second surface region including the protrusions are included, and of the first surface region, a non-formation portion where the protrusions are not formed includes the first surface region of the protrusions. or having a depth greater than or equal to the length of the projection in the first direction and being non-circular when viewed in the first direction and at least one of a recess that satisfies either one of the above and a protrusion that has a projection length that is less than the length of the projection in the first direction and that is non-annular when viewed in the first direction. In the non-formation portion of the second surface region, neither the recesses nor the protrusions are formed. In the holding device, the object is supported by a plurality of protrusions formed on the first surface of the ceramic member. Further, heat transfer between the ceramic member and the object is performed through the gas existing between the first surface of the ceramic member and the object. In this holding device, the first surface of the ceramic member includes a first surface region and a second surface region which are positioned at different positions and include the same number (two or more) of protrusions. At least one of a concave portion and a convex portion is formed in the non-formed portion of the first surface region where the projection is not formed. The recess has a depth less than the length of the protrusion in the first direction, a depth greater than or equal to the length of the protrusion in the first direction, and is non-circular when viewed in the first direction. Satisfy one or the other of being. The protrusion has a protrusion length that is less than the length of the protrusion in the first direction, and the shape of the protrusion when viewed in the first direction is non-circular. On the other hand, in the non-formation portion of the second surface region, neither recesses nor protrusions are formed. If a recess is formed in the first surface region, the distance between the bottom surface of the recess and the object held on the first surface is the distance between the unformed portion of the second surface region and the object. longer than the distance between Therefore, the heat transfer efficiency from the recess of the first surface region to the object is lower than the heat transfer efficiency from the second surface region to the object. Further, when a convex portion is formed on the first surface region, the distance between the projecting tip of the convex portion and the object is the same as the distance between the non-formed portion of the second surface region and the object. short in comparison. Therefore, the efficiency of heat transfer from the projections of the first surface region to the object is higher than the efficiency of heat transfer from the second surface region to the object. Therefore, according to the present holding device, by forming at least one of the concave portion and the convex portion in the non-formed portion of the first surface region, it is possible to suppress the occurrence of a temperature singularity of high temperature or low temperature, The temperature distribution on the first surface of the ceramic member can be controlled.

(2) In the holding device, the ceramic member has a second surface arranged opposite the first surface in the first direction, and the holding device further has a third surface. a base member arranged such that the third surface faces the second surface of the ceramic member; and the second surface of the ceramic member and the third surface of the base member. and a joining portion that joins the ceramic member and the base member. For example, due to the structure of the base member, etc., a difference in heat absorption effect from the ceramic member to the base member occurs between a specific position on the third surface of the base member and other positions, resulting in so-called uneven heat absorption. Sometimes. Even if such heat absorption unevenness occurs in the base member, according to the present holding device, in the non-formed portion of the first surface region, for example, recesses and protrusions are formed at positions corresponding to locations where a difference occurs in the heat absorption effect. By forming at least one of them, it is possible to suppress the generation of a high-temperature or low-temperature singular point, and to control the temperature distribution on the first surface of the ceramic member.

(3) In the above-described holding device, between the second surface of the ceramic member and the third surface of the base member, there is a joint region where the joint portion intervenes and a non-contact region where the joint portion does not intervene. A bonded region may be present, and the non-bonded region overlaps at least a portion of the recess formed in the first surface region when viewed from the first direction. Between the second surface of the ceramic member and the third surface of the base member, there is a difference in the heat absorption effect from the ceramic member to the base member between the bonded region where the bonded portion intervenes and the non-bonded region where the bonded portion does not intervene. may occur, resulting in uneven heat absorption. Even if such heat absorption unevenness occurs, according to the present holding device, recesses are formed in the non-formed portion of the first surface region, for example, at positions corresponding to the non-bonded regions, so that the non-bonded regions are It is possible to suppress the occurrence of a high-temperature singularity due to the existence of the ceramic member, and to control the temperature distribution on the first surface of the ceramic member.

(4) The holding device further includes a heat generating resistor provided on the ceramic member, the heat generating resistor having a first heat generating portion and a second heat generating portion having a larger unit heat generation amount than the first heat generating portion. and, when viewed in the first direction, the second heat generating portion of the heat generating resistor overlaps at least a portion of the recess formed in the first surface region. It is good also as a structure with. According to this holding device, in the non-formation portion of the first surface region, the recess is formed at the position corresponding to the second heat generating portion of the heating resistor having a relatively large unit heat generation amount. It is possible to suppress the occurrence of a high-temperature singularity due to the presence of the heat generating portion 2, and control the temperature distribution on the first surface of the ceramic member.

(5) The holding device further includes a heat generating resistor provided on the ceramic member, the heat generating resistor having a first heat generating portion and a third heat generating portion having a unit heat generation amount smaller than that of the first heat generating portion. and, when viewed in the first direction, the third heat generating portion of the heat generating resistor overlaps at least part of the convex portion formed on the first surface region. It is good also as a structure with. According to this holding device, in the non-formation portion of the first surface region, the convex portion is formed at the position corresponding to the third heat generating portion of the heating resistor having a relatively small unit heat generation amount. It is possible to suppress the occurrence of a low-temperature singular point due to the presence of the heat generating portion 3, and to control the temperature distribution on the first surface of the ceramic member.

(6) In the above holding device, the ceramic member may further include a cavity, and when viewed in the first direction, the cavity corresponds to at least one of the recesses formed in the first surface region. It is good also as a structure which overlaps with a part. According to this holding device, in the non-formed portion of the first surface region, a recess is formed at a position corresponding to the cavity formed in the ceramic member, so that a high-temperature temperature singularity caused by the presence of the cavity is formed. can be suppressed, and the temperature distribution on the first surface of the ceramic member can be controlled.

(7) The holding device further includes a porous portion at least partially disposed inside the ceramic member and having a porosity higher than that of the ceramic member. The structure may be characterized in that the texture portion overlaps at least a portion of the convex portion formed on the first surface region. According to this holding device, in the non-formed portion of the first surface region, a convex portion is formed at a position corresponding to the porous portion, thereby generating a low-temperature temperature singularity due to the existence of the porous portion. can be suppressed, and the temperature distribution on the first surface of the ceramic member can be controlled.

1 is a perspective view schematically showing an appearance configuration of an electrostatic chuck 10 according to a first embodiment; FIG. It is an explanatory view showing roughly the XZ section composition of electrostatic zipper 10 in a 1st embodiment. It is an explanatory view showing roughly XY section composition of electrostatic chuck 10 in a 1st embodiment. It is an explanatory view showing roughly XY section composition of electrostatic chuck 10 in a 1st embodiment. FIG. 2 is an explanatory diagram schematically showing a configuration on an attraction surface S1 of the electrostatic chuck 10; 2 is an explanatory view partially showing the XZ cross-sectional configuration of the electrostatic chuck 10; FIG. 2 is an explanatory view partially showing the XZ cross-sectional configuration of the electrostatic chuck 10; FIG. 2 is an explanatory view partially showing the XZ cross-sectional configuration of the electrostatic chuck 10; FIG. It is an explanatory view partially showing the XZ cross-sectional configuration of the electrostatic chuck 10a in the second embodiment. It is explanatory drawing which shows partially the XZ cross-sectional structure of the electrostatic chuck 10b in a modification.

A. First embodiment:
A-1. Configuration of electrostatic chuck 10:
FIG. 1 is a perspective view schematically showing the external configuration of an electrostatic chuck 10 according to the first embodiment, and FIG. 2 is an explanatory view schematically showing the XZ cross-sectional configuration of the electrostatic chuck 10 according to the first embodiment. 3 and 4 are explanatory diagrams schematically showing the XY cross-sectional configuration of the electrostatic chuck 10 in the first embodiment. 2 shows the XZ cross-sectional configuration of the electrostatic chuck 10 at the position II-II in FIG. 3, and FIG. 3 shows the XY cross-sectional configuration of the electrostatic chuck 10 at the position III-III in FIG. , and FIG. 4 shows the XY cross-sectional configuration of the electrostatic chuck 10 at the position IV-IV in FIG. Each figure shows mutually orthogonal XYZ axes for specifying directions. In this specification, for the sake of convenience, the positive direction of the Z-axis is referred to as the upward direction, and the negative direction of the Z-axis is referred to as the downward direction. may be

The electrostatic chuck 10 is a device that attracts and holds an object (for example, a semiconductor wafer W) by electrostatic attraction, and is used, for example, to fix the semiconductor wafer W within a vacuum chamber of a semiconductor manufacturing apparatus. The electrostatic chuck 10 includes a ceramic member 100 and a base member 200 arranged side by side in a predetermined arrangement direction (vertical direction (Z-axis direction) in this embodiment). The ceramic member 100 and the base member 200 are arranged such that the lower surface S2 of the ceramic member 100 and the upper surface S3 of the base member 200 face each other in the arrangement direction. The lower surface S2 of the ceramic member 100 corresponds to the second surface in the claims, and the upper surface S3 of the base member 200 corresponds to the third surface in the claims.

The ceramic member 100 is, for example, a circular planar plate-like member, and is made of ceramics (eg, alumina, aluminum nitride, or the like). The diameter of the ceramic member 100 is, for example, about 50 mm to 500 mm (usually about 200 mm to 450 mm), and the thickness of the ceramic member 100 is, for example, about 1 mm to 10 mm.

A pair of chuck electrodes 400 made of a conductive material (for example, tungsten, molybdenum, etc.) is provided inside the ceramic member 100 (only one chuck electrode 400 is shown in FIG. 2). When a voltage is applied to the pair of chuck electrodes 400 from a power source (not shown), electrostatic attraction is generated, and the electrostatic attraction causes the semiconductor wafer W to move toward the surface of the ceramic member 100 opposite to the lower surface S2 (hereinafter referred to as , “attraction surface S1”). The attraction surface S1 of the ceramic member 100 is a substantially planar surface that is substantially perpendicular to the arrangement direction (Z-axis direction) described above. However, in this embodiment, a plurality of minute projections 170 (not shown in FIGS. 1 and 2) are formed on the attraction surface S1 of the ceramic member 100. As shown in FIG. It is preferable that the plurality of protrusions 170 are arranged at equal intervals in at least one plane direction. In the state where the semiconductor wafer W is sucked and fixed on the chucking surface S1, the tips of the plurality of projections 170 are in contact with the semiconductor wafer W, and the non-formation portion 172 of the chucking surface S1 where the projections 170 are not formed and the semiconductor wafer are separated from each other. There is a small space between the W surface. The shape of the tip of the protrusion 170 may be, for example, substantially flat (see FIG. 6, etc., which will be described later) or substantially convex. The adsorption surface S1 of the ceramic member 100 corresponds to the first surface in the claims, and the Z-axis direction corresponds to the first direction in the claims. Also, in this specification, the direction perpendicular to the Z-axis (that is, the direction parallel to the attraction surface S1) is referred to as the “plane direction”.

The base member 200 is, for example, a circular planar plate member having the same diameter as the ceramic member 100 or having a larger diameter than the ceramic member 100, and is made of metal (aluminum, aluminum alloy, etc.), for example. The diameter of the base member 200 is, for example, approximately 220 mm to 550 mm (usually 220 mm to 470 mm), and the thickness of the base member 200 is, for example, approximately 20 mm to 40 mm.

A coolant channel 210 is formed inside the base member 200 (see FIG. 2). When a coolant (for example, a fluorine-based inert liquid, water, or the like) is caused to flow through the coolant channel 210, the base member 200 is cooled, and heat transfer between the base member 200 and the ceramic member 100 via the adhesive layer 300 causes The ceramic member 100 is cooled, and the semiconductor wafer W held on the suction surface S1 of the ceramic member 100 is cooled. Thereby, the temperature control of the semiconductor wafer W is realized.

The ceramic member 100 and the base member 200 are joined together by an adhesive layer 300 arranged between the lower surface S2 of the ceramic member 100 and the upper surface S3 of the base member 200. As shown in FIG. The adhesive layer 300 is made of an adhesive such as silicone-based resin, acrylic-based resin, or epoxy-based resin. The thickness of the adhesive layer 300 is, for example, about 0.1 mm to 1 mm. The adhesive layer 300 corresponds to a joint in the claims.

As shown in FIGS. 2 and 4, inside the ceramic member 100, there is provided a heater electrode 500 composed of a resistance heating element made of a conductive material (for example, tungsten, molybdenum, etc.). When a voltage is applied to the heater electrode 500 from a power source (not shown), the heater electrode 500 generates heat, thereby warming the ceramic member 100 and warming the semiconductor wafer W held on the suction surface S1 of the ceramic member 100. . Thereby, the temperature control of the semiconductor wafer W is realized. The heater electrode 500 corresponds to a heating resistor in claims.

In this embodiment, the heater electrode 500 includes a first heater 500L and a second heater 500R in order to control the temperature of the attracting surface S1 of the ceramic member 100 with high accuracy. The first heater 500L and the second heater 500R are arranged independently of each other on one imaginary plane (for example, the XY plane in FIG. 4) substantially perpendicular to the Z-axis direction. In other words, each of the heaters 500L and 500R is provided in each segment (region) when at least part of the ceramic member 100 is virtually divided into a plurality of segments (regions) arranged in a direction substantially perpendicular to the Z-axis direction. It is an arranged heating resistor. As a mode for setting the segments, a mode is used in which all or part of the ceramic member 100 is divided into a plurality of segments arranged in a circumferential direction around the center point of the attraction surface S1. Each of the heaters 500L and 500R includes a linear heater line portion 506 and a pair of heater pad portions 508 joined to both ends of the heater line portion 506 when viewed in the vertical direction (Z direction). The heater line portion 506 is centered on the center point of the attraction surface S1 and includes arc portions 506C having different diameters and straight portions 506D connecting the arc portions 506C. According to such a configuration, by individually controlling the heaters 500L and 500R arranged in each segment, the temperature can be controlled for each segment. can be performed with high accuracy.

A-2. Configuration for supplying gas:
In addition, the electrostatic chuck 10 enhances the heat transfer between the ceramic member 100 and the semiconductor wafer W to further enhance the uniformity of the temperature distribution of the semiconductor wafer W. Arrangements are provided for supplying gas to the space existing between the surfaces. In this embodiment, helium gas (He gas) is used as such gas. A configuration for supplying helium gas will be described below with reference to FIGS. 1 to 3. FIG.

A-2-1. Configuration for supplying gas in base member 200:
As shown in FIGS. 2 and 4, the lower surface S4 of the base member 200 is formed with a gas source connection hole 221 connected to a helium gas source (not shown), and the upper surface S3 of the base member 200 is provided with a gas supply port. A hole 222 is open. A gas supply passage 220 is formed inside the base member 200 to communicate between the gas source connection hole 221 and the gas supply hole 222 .

A-2-2. Configuration for supplying gas in the adhesive layer 300:
Further, as shown in FIG. 2, the adhesive layer 300 is formed with a through hole 310 communicating with the gas supply hole 222 formed in the base member 200 and penetrating the adhesive layer 300 in the thickness direction (vertical direction). It is

A-2-3. Configuration for supplying gas in ceramic member 100:
Further, as shown in FIGS. 1 and 2, the adsorption surface S1 of the ceramic member 100 has eight gas ejection holes 102 open. Further, inside the ceramic member 100, gas is provided to connect an upper surface 144 (FIG. 4) of an accommodation chamber 140 (described later) formed in the ceramic member 100 and a gas ejection hole 102 opening to the adsorption surface S1 of the ceramic member 100. A jet flow path 110 is formed. As shown in FIGS. 2 and 3, the gas ejection channel 110 communicates with the first vertical channel 111 extending upward from the upper surface 144 of the storage chamber 140 and extends in the plane direction. It is composed of a lateral channel 114 extending in an annular shape and a second longitudinal channel 112 extending upward from the lateral channel 114 and communicating with the gas ejection holes 102 .

Note that the electrostatic chuck 10 of the present embodiment has two helium gas supply paths. That is, as shown in FIG. 3, two lateral channels 114 are formed inside the ceramic member 100 . As shown in FIGS. 2 and 3, of the two horizontal flow paths 114, the horizontal flow path 114 closer to the center of the ceramic member 100 passes through the first vertical flow path 111 into the storage chamber 140 shown in FIG. and communicates with the four gas ejection holes 102 near the center of the ceramic member 100 among the eight gas ejection holes 102 opening to the adsorption surface S1 via the second vertical flow path 112. ing. Among the two horizontal flow paths 114, the horizontal flow path 114 farther from the center of the ceramic member 100 communicates with the storage chamber 140 (not shown) via the first vertical flow path 111, of the eight gas ejection holes 102 open to the adsorption surface S1, the four gas ejection holes 102 far from the center of the ceramic member 100 are communicated with each other through the vertical flow passages 112 of . Note that the later-described filling member 160 may be arranged in each of the two systems of the helium gas supply path, or may be arranged in only one of the two systems.

Moreover, as shown in FIGS. 2 and 4, a storage chamber 140 is formed inside the ceramic member 100 . As described above, the gas ejection channel 110 (the first vertical channel 111 forming the gas ejection channel 110) opens in the upper surface of the storage chamber 140. As shown in FIG. On the other hand, the lower end side of the accommodation chamber 140 is open to the lower surface S2 of the ceramic member 100 and communicates with the through hole 310 of the adhesive layer 300 . In the present embodiment, the area of the opening of the storage chamber 140 toward the adhesive layer 300 is larger than the area of the opening of the through hole 310 toward the ceramic member 100 (see FIG. 6 described later). Further, in the present embodiment, the shape of the storage chamber 140 (internal space of the storage chamber 140) is substantially columnar. Therefore, the area of the upper surface 144 of the storage chamber 140, the area of the lower surface 145 of the storage chamber 140, and the area of any cross section of the storage chamber 140 orthogonal to the vertical direction (Z-axis direction) are substantially the same.

As shown in FIGS. 2 and 4, a storage chamber 140 formed in the ceramic member 100 is filled with a filling member (also called a “breathable plug”) 160 made of an insulating material and having air permeability. ing. Since the filling member 160 has a higher porosity than the ceramic member 100, the thermal conductivity of the filling member 160 is lower than that of the ceramic member 100, which is relatively dense. As a material for forming the filling member 160, for example, a ceramic porous body, glass fiber, heat-resistant polytetrafluoroethylene resin sponge, or the like can be used. In this embodiment, the shape of the filling member 160 is substantially columnar like the shape of the storage chamber 140 . In addition, the filling member 160 is embedded in the storage chamber 140 with almost no gap. The filling member 160 corresponds to the porous portion in the claims.

In this way, since the filling member 160 made of an insulating material is filled in the storage chamber 140 , discharge between the ceramic member 100 and the base member 200 via the storage chamber 140 and discharge in the storage chamber 140 generation of helium gas discharge is suppressed.

As shown in FIGS. 2 and 3, helium gas supplied from a helium gas source (not shown) flows into gas supply channel 220 inside base member 200 through gas source connection hole 221 . The helium gas that has flowed into the gas supply channel 220 flows from the gas supply channel 220 through the gas supply holes 222 into the through holes 310 of the adhesive layer 300 . The helium gas that has flowed into the through hole 310 passes through the inside of the filling member 160 that fills the storage chamber 140 of the ceramic member 100, and forms the first gas ejection flow path 110 inside the ceramic member 100. The gas flows into the vertical flow path 111, passes through the horizontal flow path 114 and the second vertical flow path 112, and is jetted out from each gas jetting hole 102 formed in the adsorption surface S1. In this manner, helium gas is supplied to the space existing between the attraction surface S1 and the surface of the semiconductor wafer W. As shown in FIG.

A-3. Configuration for controlling the temperature distribution on the adsorption surface S1 of the ceramic member 100:
FIG. 5 is an explanatory diagram schematically showing the configuration on the attraction surface S1 of the electrostatic chuck 10. As shown in FIG. FIG. 5 shows the structure of the electrostatic chuck 10 viewed from above, and also shows an enlarged view of the structure (concavo-convex state) of the four surface regions X1 to X4 on the attraction surface S1. The four surface regions X1 to X4 each include the same number of protrusions 170 (2 or more, 4 in FIG. 5). 6 to 8 are explanatory views partially showing the XZ cross-sectional configuration of the electrostatic chuck 10. FIG. 6 partially shows the XZ cross-sectional configuration of the electrostatic chuck 10 including the hole forming region X1 at the position VI-VI of FIG. 5, and FIG. 7 shows the position VII-VII of FIG. 8 partially shows the XZ cross-sectional configuration of the electrostatic chuck 10 including the heater high temperature corresponding region X3 in FIG. Configuration is shown.

A-3-1. Configuration of hole forming region X1 on adsorption surface S1:
As shown in FIGS. 5 and 6, the hole formation region X1 on the adsorption surface S1 includes the plurality of protrusions 170 as well as openings of the gas ejection passages 110 (gas ejection holes 102). Specifically, the gas ejection channel 110 opens in a non-formation portion 172 where the projection 170 is not formed in the hole formation region X1. In addition, in the non-formation portion 172 of the hole formation region X1, a ring-shaped first recess 182 surrounding the gas ejection hole 102 when viewed in the vertical direction (Z direction) is formed. The first recess 182 is recessed toward the lower surface S2 of the ceramic member 100 with respect to the surrounding portion of the first recess 182 in the non-formed portion 172 . Also, the vertical depth H2 of the first recess 182 from the peripheral portion of the first recess 182 is shorter than the length H1 of the protrusion 170 from the peripheral portion of the first recess 182 . The depth H2 of the first recess 182 is preferably 10% or more of the length H1 of the projection 170, and preferably 90% or less of the length H1 of the projection 170. In addition, the inner periphery of the first recess 182 is adjacent to the gas ejection holes 102 over the entire periphery when viewed from the top and bottom direction. If reduced, there is no protrusion between the first recess 182 and the gas ejection hole 102 . Here, as described above, the filling member 160 is filled in the storage chamber 140 communicating with the gas ejection passage 110 . The first recess 182 overlaps with the gas ejection channel 110 , the filling member 160 , and the through hole 310 formed in the adhesive layer 300 when viewed in the up-down direction. In addition, when viewed in the vertical direction, the outer peripheral line of the first recess 182 and the outer peripheral line of the filling member 160 overlap each other over the entire circumference. The gas ejection channel 110 corresponds to the cavity in the claims. The portion of the adhesive layer 300 other than the through hole 310 corresponds to the bonded region in the claims, and the through hole 310 in the adhesive layer 300 corresponds to the non-bonded region in the claims.

A-3-2. Configuration of the heater high temperature corresponding region X3 on the adsorption surface S1:
As shown in FIGS. 5 and 7, the heater high temperature corresponding region X3 on the attraction surface S1 includes a plurality of protrusions 170. As shown in FIG. In addition, in the non-formation portion 172 where the projection 170 is not formed in the heater high temperature corresponding region X3, a substantially circular second recess 184 is formed when viewed in the vertical direction (Z direction). A second recess 184 is formed at a position away from the gas ejection hole 102 . The second recess 184 is recessed toward the lower surface S2 of the ceramic member 100 with respect to the surrounding portion of the second recess 184 in the non-formed portion 172 . Also, the vertical depth H3 of the second recess 184 from the peripheral portion of the second recess 184 is shorter than the length H1 of the projection 170 . The depth H3 of the second recess 184 is preferably 10% or more of the length H1 of the protrusion 170, and preferably 90% or less of the length H1 of the protrusion 170. Here, as shown in FIG. 5, in the heater line portion 506, the arc portion 506C and the linear portion 506D are connected via the broken line portion 506E. The second recess 184 overlaps the polygonal line portion 506E of the heater line portion 506 when viewed in the vertical direction. The arc portion 506C and the straight portion 506D correspond to the first heat generating portion in the claims, and the polygonal line portion 506E corresponds to the second heat generating portion in the claims.

A-3-3. Configuration of Path Corresponding Region X4 on Attraction Surface S1:
As shown in FIGS. 5 and 8, the route corresponding region X4 on the attraction surface S1 includes a plurality of projections 170. As shown in FIG. In addition, a substantially rectangular third recess 186 as viewed in the vertical direction (Z direction) is formed in the non-formation portion 172 in which the projection 170 is not formed in the path corresponding region X4. A third recess 186 is formed at a position away from the gas ejection hole 102 . The third recess 186 is recessed toward the lower surface S2 of the ceramic member 100 with respect to the surrounding portion of the third recess 186 in the non-forming portion 172 . Also, the vertical depth H4 of the third recess 186 from the peripheral portion of the third recess 186 is shorter than the length H1 of the protrusion 170 . The depth H4 of the third recess 186 is preferably 10% or more of the length H1 of the protrusion 170, and preferably 90% or less of the length H1 of the protrusion 170. Here, as shown in FIG. 5, the third recess 186 as a whole overlaps the lateral flow path 114 when viewed in the vertical direction. The lateral channel 114 corresponds to the cavity in the claims.

A-3-4. Configuration of reference area X2 on attraction surface S1:
As shown in FIG. 5, the reference area X2 on the attraction surface S1 includes a plurality of protrusions 170. As shown in FIG. In addition, the non-formation portion 172 in which the projection 170 is not formed in the reference region X2 has a substantially flat shape in which neither the concave portion nor the convex portion is formed. Further, unlike the surface regions X1, X3, and X4, the reference region X2 (the non-formation portion 172) is a cavity formed in the electrostatic chuck 10 (the gas jet flow path 110, It does not overlap storage chamber 140 , through hole 310 ) or bent line portion 506</b>E of heater line portion 506 . That is, the reference area X2 is a surface area located at a position different from a portion that becomes a high-temperature temperature singularity due to the internal structure of the electrostatic chuck 10 (ceramic member 100) when viewed in the vertical direction. Note that the position of the reference region X2 shown in FIG. 5 is an example, and the internal structure of the electrostatic chuck 10 (cavities, the presence of members having a lower heat transfer coefficient than the ceramic member 100, and the high-temperature portion of the heater) on the attraction surface S1. A reference region X2 is a surface region located at a position different from the portion that becomes a high-temperature temperature singularity due to . The hole forming region X1, the heater high temperature corresponding region X3, and the path corresponding region X4 correspond to the first surface region in the claims, and the reference region X2 corresponds to the second surface region in the claims. Note that the second surface region (reference region X2) may be a region that shares at least one protrusion 170 with the first surface region.

The recesses 182, 184, and 186 described above can be formed, for example, by polishing the suction surface S1 on which the projections 170 are formed by embossing.

A-4. Effect of this embodiment:
As described above, in the electrostatic chuck 10 of the present embodiment, the semiconductor wafer W is supported by the plurality of projections 170 formed on the attraction surface S1 of the ceramic member 100. As shown in FIG. A slight space exists between the non-formation portion 172 on the attraction surface S1 and the surface of the semiconductor wafer W, and the gas is supplied from the gas ejection holes 102 to this space. Therefore, heat transfer between the attraction surface S1 (especially the non-formation portion 172) and the semiconductor wafer W is mainly performed through gas. Here, as shown in FIGS. 5 to 8, in the electrostatic chuck 10 according to the present embodiment, the first surface region (the hole forming region X1, the heater high temperature corresponding region X3, the path Recesses (182, 184, 186) are formed in the non-formation portion 172 of the corresponding region X4). On the other hand, no recess is formed in the reference area X2 on the attraction surface S1 of the ceramic member 100. As shown in FIG. The distance between the bottom surface of the recess formed in the first surface region and the semiconductor wafer W supported by the attraction surface S1 is the distance between the non-formation portion 172 of the second surface region and the semiconductor wafer W. long compared to Therefore, the efficiency of heat transfer from the recess of the first surface region to the semiconductor wafer W is lower than the efficiency of heat transfer to the semiconductor wafer W from the second surface region. Therefore, according to the electrostatic chuck 10 of the present embodiment, the recesses are formed in the non-formed portion 172 of the first surface region, thereby suppressing the occurrence of a high-temperature singular point, and The temperature distribution on the adsorption surface S1 of 100 can be controlled. A specific description will be given below.

A-4-1. Effect of hole formation region X1 on adsorption surface S1:
As shown in FIGS. 5 and 6, the electrostatic chuck 10 has cavities (the gas ejection flow path 110, the through holes 310 formed in the adhesive layer 300, and the There is a gas supply channel 220). In general, the thermal conductivity of the air present in the cavity is lower than the thermal conductivity of the materials (ceramics, metals, etc.) forming the ceramic member 100 , the base member 200 and the adhesive layer 300 . Therefore, the heat absorption effect from the ceramic member 100 to the base member 200 in the portion of the electrostatic chuck 10 directly below the hole forming region X1 overlapping the cavity in the vertical direction (Z direction) is the reference region X2 not overlapping the cavity. is lower than the heat absorbing effect from the ceramic member 100 to the base member 200 in the portion immediately below (see the white arrow in FIG. 6). Therefore, the portion directly above the cavity in the hole forming region X1 is likely to become a high-temperature singular point due to the internal structure (cavity) of the electrostatic chuck 10 . Furthermore, a filling member 160 is present directly below the hole forming region X1 in the electrostatic chuck 10 . As described above, the heat transfer coefficient of the filler member 160 is relatively low and may be lower than that of the cavity depending on the material of construction. Therefore, the heat absorption effect from the ceramic member 100 to the base member 200 in the portion immediately below the hole forming region X1 is particularly low, and the portion immediately above the cavity in the hole forming region X1 is the internal structure (cavity) of the electrostatic chuck 10. It is easy to become a high temperature singularity due to

On the other hand, a first recess 182 is formed in a portion directly above the cavity in the hole forming region X1. The distance between the bottom surface of the first recess 182 and the semiconductor wafer W supported by the suction surface S1 is longer than the distance between the semiconductor wafer W and the non-formation portion 172 of the reference region X2. Therefore, the heat transfer efficiency from the first recess 182 of the hole forming region X1 to the semiconductor wafer W is lower than the heat transfer efficiency from the reference region X2 to the semiconductor wafer W (see black arrow in FIG. 6). . Therefore, by forming the first recesses 182 at positions corresponding to the cavities formed in the ceramics member 100, it is possible to suppress the occurrence of high-temperature singularities due to the existence of the cavities. The uniformity of the temperature distribution on the attraction surface S1 of the member 100 can be improved. Also, the depth H2 of the first recess 182 is shorter than the length H1 of the projection 170 . Therefore, compared to the case where the depth H2 of the first recess 182 is equal to or greater than the length H1 of the protrusion 170, the first recess 182 itself is prevented from becoming a temperature singular point of low temperature. The same is true for the second recess 184 and the third recess 186 . Moreover, since there is no projecting portion between the first recess 182 and the gas ejection hole 102, the occurrence of a high-temperature temperature singularity due to this projecting portion is suppressed.

A-4-2. Effect of the heater high temperature corresponding region X3 on the adsorption surface S1:
As shown in FIGS. 5 and 7, a polygonal line portion 506E of the heater line portion 506 exists directly below the high temperature heater corresponding region X3 on the adsorption surface S1. This polygonal line portion 506E has a higher temperature than the portions (arc portion 506C, straight portion 506D) of the heater line portion 506 other than the polygonal line portion 506E (see the white arrow in FIG. 7) due to current concentration at the corners. ). Therefore, the portion directly above the polygonal line portion 506E in the heater high temperature corresponding region X3 is likely to become a high temperature singular point caused by the internal structure of the electrostatic chuck 10 (heater electrode 500).

On the other hand, a second recess 184 is formed in a portion directly above the polygonal line portion 506E in the heater high temperature corresponding region X3. The distance between the bottom surface of the second recess 184 and the semiconductor wafer W supported by the suction surface S1 is longer than the distance between the semiconductor wafer W and the non-formation portion 172 of the reference area X2. Therefore, the heat transfer efficiency from the second recess 184 of the heater high temperature corresponding region X3 to the semiconductor wafer W is lower than the heat transfer efficiency from the reference region X2 to the semiconductor wafer W (see black arrow in FIG. 7). ). Therefore, by forming the second recess 184 at a position corresponding to the high temperature portion (folded line portion 506E) in the heater electrode 500 provided in the ceramic member 100, the high temperature caused by the existence of the high temperature portion in the heater electrode 500 is reduced. temperature singularity can be suppressed, and for example, the uniformity of the temperature distribution on the attraction surface S1 of the ceramic member 100 can be improved.

A-4-3. Effect of path corresponding region X4 on attraction surface S1:
As shown in FIGS. 5 and 8, a lateral flow path 114 exists directly below the route corresponding region X4 on the attraction surface S1. Since the horizontal flow path 114 is also hollow, the heat absorption effect from the ceramic member 100 to the base member 200 in the portion of the electrostatic chuck 10 immediately below the path corresponding region X4 overlapping the horizontal flow path 114 when viewed in the vertical direction (Z direction) is , is lower than the heat absorbing effect from the ceramics member 100 to the base member 200 in the portion immediately below the reference region X2 that does not overlap with the lateral channel 114 (see white arrow in FIG. 8). Therefore, the portion directly above the lateral flow path 114 in the path corresponding region X4 is likely to become a high-temperature singular point due to the internal structure of the electrostatic chuck 10 (the lateral flow path 114).

On the other hand, a third recess 186 is formed in a portion directly above the lateral flow channel 114 in the route corresponding region X4. The distance between the bottom surface of the third recess 186 and the semiconductor wafer W supported by the suction surface S1 is longer than the distance between the semiconductor wafer W and the non-formation portion 172 of the reference area X2. Therefore, the heat transfer efficiency from the third recess 186 of the path corresponding region X4 to the semiconductor wafer W is lower than the heat transfer efficiency from the reference region X2 to the semiconductor wafer W (see black arrow in FIG. 8). . Therefore, by forming the third recess 186 at a position corresponding to the cavity (lateral channel 114) formed in the ceramic member 100, it is possible to suppress the occurrence of a high-temperature singularity due to the presence of the cavity. Therefore, for example, the uniformity of the temperature distribution on the attracting surface S1 of the ceramic member 100 can be improved.

B. Second embodiment:
FIG. 9 is an explanatory diagram partially showing the XZ cross-sectional configuration of the electrostatic chuck 10a in the second embodiment. Among the configurations of the electrostatic chuck 10a of the second embodiment, the same configurations as those of the above-described electrostatic chuck 10 of the first embodiment are denoted by the same reference numerals, and descriptions thereof are omitted.

B-1. Configuration of heater low temperature corresponding region X5 on adsorption surface S1:
As shown in FIG. 9 , the heater low temperature corresponding region X5 on the attraction surface S1 includes a plurality of projections 170. As shown in FIG. Further, in the non-formation portion 172 in which the projection 170 is not formed in the heater low temperature corresponding region X5, a convex portion 190 having a non-annular shape (for example, a substantially rectangular shape or a substantially circular shape) is formed when viewed in the vertical direction (Z direction). It is The convex portion 190 protrudes from the surrounding portion of the convex portion 190 in the non-formed portion 172 to the side opposite to the lower surface S2 of the ceramic member 100a. Also, the length H5 of protrusion 190 in the vertical direction from the peripheral portion of protrusion 190 is shorter than the length H1 of protrusion 170 . Therefore, compared to the case where the protrusion length H5 of the protrusion 190 is equal to or longer than the length H1 of the protrusion 170, the protrusion 190 itself is suppressed from becoming a high-temperature temperature singular point. The protruding length H5 of the protrusion 190 is preferably 10% or more of the length H1 of the protrusion 170, and preferably 90% or less of the length H1 of the protrusion 170. Here, a part or the whole of the convex portion 190 overlaps the heater pad portion 508 of the heater electrode 500 when viewed in the vertical direction. The heater low temperature corresponding region X5 corresponds to the first surface region in the claims. The heater line portion 506 corresponds to the first heat generating portion in the claims, and the heater pad portion 508 corresponds to the third heat generating portion in the claims.

The protrusions 190 can be formed, for example, by polishing the suction surface S1 on which protrusions 170 and non-formation portions 172 are formed with protrusions 170 by embossing.

B-2. Effect of heater low temperature corresponding region X5 on adsorption surface S1:
As shown in FIG. 9, the heater pad portion 508 of the heater electrode 500 exists directly under the heater low temperature support region X5 on the adsorption surface S1. Since the heater pad portion 508 has a lower electric resistance than the heater line portion 506, the unit heat generation amount is small (see the white arrow in FIG. 9). A unit calorific value means a calorific value per unit area in a vertical view. For example, in order to determine the magnitude of the unit calorific value of A and B, the calorific value of A and B in the same area area when viewed in the vertical direction is compared. The amount of heat generated can be obtained by multiplying the resistance value of the region and the amount of current flowing through the region. However, when the amount of current flowing through each other is substantially the same as in the heater line portion 506 and the heater pad portion 508 described above, the unit heat generation amount is determined only by the magnitude of the resistance values of the heater pad portion 508 and the heater line portion 506 . can determine the size of Therefore, the portion directly above the heater pad portion 508 in the heater low temperature corresponding region X5 is likely to become a low temperature singular point due to the internal structure (heater electrode 500) of the electrostatic chuck 10. FIG. Note that the heater pad portion 508 is electrically connected to a power supply terminal (not shown) through the via 600 .

On the other hand, a convex portion 190 is formed in a portion directly above the heater pad portion 508 in the heater low temperature compatible region X5. The distance between the upper surface of the protrusion 190 and the semiconductor wafer W supported by the suction surface S1 is shorter than the distance between the semiconductor wafer W and the non-formation portion 172 of the reference area X2. For this reason, the heat transfer efficiency from the convex portion 190 of the heater low temperature compatible region X5 to the semiconductor wafer W is higher than the heat transfer efficiency from the reference region X2 to the semiconductor wafer W (see black arrow in FIG. 9). Therefore, the formation of the protrusion 190 at a position corresponding to the low temperature portion (heater pad portion 508) in the heater electrode 500 provided on the ceramic member 100 reduces the low temperature caused by the presence of the low temperature portion in the heater electrode 500. The occurrence of singular points can be suppressed, and the uniformity of the temperature distribution on the attraction surface S1 of the ceramic member 100 can be improved, for example.

C. Variant:
The technology disclosed in this specification is not limited to the above-described embodiments, and can be modified in various forms without departing from the scope of the invention. For example, the following modifications are possible.

The configuration of the electrostatic chuck 10 in each of the above embodiments is merely an example, and various modifications are possible. For example, in the first embodiment, one or two of the hole formation region X1, the heater high temperature corresponding region X3, and the path corresponding region X4 on the attraction surface S1 are recessed in the non-formation portion 172, similar to the reference region X2. It may have a substantially flat shape in which neither a place nor a protrusion is formed. Also, in the above embodiment, the four surface regions X1 to X4 each include four protrusions 170, but may include two protrusions, three protrusions, or five or more protrusions.

In the above-described first embodiment, the first recess 182 formed in the hole forming region X1 is not limited to an annular shape that is continuously connected over the entire circumference, and may be a substantially annular shape or a substantially arc shape that is not partially connected. may be The first recess 182 has a vertical depth H2 equal to or greater than the length H1 of the protrusion 170, and has a non-circular shape (for example, a substantially circular shape or a substantially rectangular shape) when viewed in the vertical direction. There may be. Further, in the first embodiment described above, a configuration may be adopted in which a projecting portion is interposed over the entire circumference or part of the gap between the first recess 182 and the gas ejection hole 102 . In addition, in the first embodiment, a part of the first recess 182 overlaps the cavity (the gas ejection channel 110, the filling member 160, the through hole 310 formed in the adhesive layer 300) when viewed in the vertical direction. It may be Even with such a configuration, it is possible to suppress the occurrence of a high-temperature singular point due to the existence of the cavity, compared to a configuration in which the first recess 182 is not formed in the hole forming region X1. Further, in the above-described first embodiment, the electrostatic chuck 10 may have a configuration in which the storage chamber 140 and the filling member 160 are not provided directly below the hole forming region X1. Furthermore, the electrostatic chuck 10 may have a configuration in which the gas ejection flow path 110 is not provided directly below the hole forming region X1. Even in such a configuration, due to the existence of the through holes 310 formed in the adhesive layer 300, the portion directly above the through holes 310 in the hole forming region X1 is exposed to a high temperature caused by the internal structure (through holes 310) of the electrostatic chuck 10. temperature singularity. Therefore, the first recess 182 formed in the hole forming region X1 can suppress the generation of a high-temperature singular point due to the existence of the cavity. Moreover, although the shape of the filling member 160 is described as substantially cylindrical, the shape is not limited to this, and may be, for example, substantially conical or prismatic.

Further, in the first embodiment, the second recess 184 formed in the heater high temperature corresponding region X3 may be substantially rectangular, for example. The second recess 184 has a vertical depth H3 equal to or greater than the length H1 of the projection 170, and has a non-circular shape (for example, a substantially circular shape or a substantially rectangular shape) when viewed in the vertical direction. There may be. Further, in the above-described first embodiment, the entire second recess 184 may overlap the polygonal line portion 506E of the heater line portion 506 when viewed in the vertical direction. Also, the second heat generating portion is not limited to the polygonal line portion 506E of the heater line portion 506, and may be, for example, the high temperature portion of the arc portion 506C or the linear portion 506D of the heater line portion 506.

Further, in the first embodiment, the third recess 186 formed in the path corresponding region X4 may be, for example, substantially circular, or may be substantially arc-shaped extending along the lateral flow channel 114. good. The third recess 186 has a vertical depth H4 equal to or greater than the length H1 of the projection 170, and has a non-circular shape (for example, a substantially circular shape or a substantially rectangular shape) when viewed in the vertical direction. There may be. Moreover, in the above-described first embodiment, the third recess 186 formed in the path corresponding region X4 is particularly formed at a position overlapping the first vertical flow channel 111 in the gas ejection flow channel 110. preferable. This is because the portion of the horizontal flow path 114 where the first vertical flow path 111 is formed is particularly likely to cause a high-temperature temperature singular point. Further, in the above-described first embodiment, a part of the third recess 186 may overlap the horizontal flow path 114 when viewed in the up-down direction. Even with such a configuration, it is possible to suppress the occurrence of a high-temperature singular point due to the presence of the cavity, compared to a configuration in which the third recess 186 is not formed in the path corresponding region X4.

In each of the above embodiments, the attracting surface S1 of the ceramic member 100 may be formed with both recesses and protrusions. In addition, a depression having a depth equal to or greater than the length H1 of the projection 170 in the first direction is formed in the attracting surface S1 of the ceramic member 100, and a protrusion is formed on the bottom surface of the depression. may be configured. Also, the area of the concave portion and the area of the convex portion as viewed in the first direction may be larger or smaller than the area of one projection. Also, the cavity may be, for example, a concave portion (terminal receiving hole) formed in the second surface of the ceramic member.

FIG. 10 is an explanatory view partially showing the XZ cross-sectional configuration of an electrostatic chuck 10b in a modified example. As shown in FIG. 10, the low endothermic region X6 on the attraction surface S1 includes a plurality of projections 170. As shown in FIG. Further, in the non-formation portion 172 in which the projection 170 is not formed in the low endothermic region X6, a substantially rectangular or substantially round fourth recess 192 is formed when viewed in the vertical direction (Z direction). there is A fourth recess 192 is formed at a position away from the gas ejection hole 102 . The fourth recess 192 is recessed toward the lower surface S2 of the ceramic member 100 with respect to the surrounding portion of the fourth recess 192 in the non-forming portion 172 . Also, the vertical depth H6 of the fourth recess 192 from the peripheral portion of the fourth recess 192 is shorter than the length H1 of the projection 170 . The depth H6 of the fourth recess 192 is preferably 10% or more of the length H1 of the protrusion 170, and preferably 90% or less of the length H1 of the protrusion 170. Here, as viewed in the vertical direction, part or the whole of the fourth recess 192 overlaps the non-refrigerant channel portion 230 between the coolant channels 210 of the base member 200 .

As shown in FIG. 10, a non-refrigerant channel portion 230 is present on the adsorption surface S1 immediately below the low endothermic corresponding region X6. Since the coolant does not flow in the non-coolant channel portion 230, the ceramic member 100 in the portion of the electrostatic chuck 10 immediately below the low endothermic corresponding region X6 that overlaps the non-coolant channel portion 230 when viewed in the vertical direction (Z direction). The heat absorption effect from the base member 200 to the base member 200 is lower than the heat absorption effect from the ceramics member 100 to the base member 200 in the portion immediately below the reference region X2 overlapping the coolant flow path 210 (see the white arrow in FIG. 10). Therefore, the portion directly above the non-coolant channel portion 230 in the low endothermic region X6 is likely to become a high temperature singular point due to the internal structure (non-coolant channel portion 230) of the electrostatic chuck 10. FIG.

On the other hand, a fourth recess 192 is formed in a portion directly above the non-refrigerant channel portion 230 in the low endothermic region X6. Therefore, the heat transfer efficiency from the fourth recess 192 of the low endothermic region X6 to the semiconductor wafer W is lower than the heat transfer efficiency from the reference region X2 to the semiconductor wafer W (see black arrow in FIG. 10). ). Therefore, by forming the fourth recess 192 in the base member 200 at a position corresponding to the non-coolant channel portion 230, occurrence of a high-temperature temperature singularity caused by the presence of the non-coolant channel portion 230 is suppressed. For example, the uniformity of the temperature distribution on the attracting surface S1 of the ceramic member 100 can be improved. The fourth recess 192 has a vertical depth H6 equal to or greater than the length H1 of the protrusion 170, and has a non-circular shape (for example, a substantially circular shape or a substantially rectangular shape) when viewed in the vertical direction. There may be.

Further, for example, in each of the above-described embodiments, the heater electrode 500 is arranged so as to avoid the filling member 160 when viewed in the vertical direction (specifically, the distance between the pair of heaters is the filling member 160 when viewed in the vertical direction). 160), the portion of the adsorption surface S1 of the ceramics member 100 directly above the filling member 160 becomes a temperature singular point of low temperature. In such a configuration, it is preferable to form a convex portion in a portion directly above the filling member 160 on the adsorption surface S1.

Further, in each of the above embodiments, at least one of the chuck electrode 400 and the heater electrode 500 may not be provided inside the ceramic member 100 . Also, the heater electrode 500 may be arranged on the base member 200 side of the ceramic member 100 (between the ceramic member 100 and the adhesive layer 300) instead of inside the ceramic member 100. FIG.

Further, in each of the above-described embodiments, the coolant channel 210 is formed inside the base member 200, but the coolant channel 210 is formed not inside the base member 200 but on the surface of the base member 200 (for example, the surface of the base member 200). and the adhesive layer 300).

Further, in the above-described embodiment, the ceramic member 100 and the base member 200 may be joined by a plurality of joining portions instead of the integral adhesive layer 300 . Specifically, a plurality of joints are discretely formed between the ceramic member 100 and the base member 200 and arranged on one virtual plane perpendicular to the facing direction of the ceramic member 100 and the base member 200. It may be These multiple joint portions correspond to the joint portions in the claims. Further, in each of the above embodiments, the ceramic member 100 and the base member 200 are joined by the adhesive layer 300, but other methods (for example, brazing) may be used to join the ceramic member 100 and the base member 200 together. or mechanical bonding, etc.) may be employed.

Further, in each of the above embodiments, the bipolar method in which the pair of chuck electrodes 400 are provided inside the ceramic member 100 is adopted, but the unipolar method in which one chuck electrode 400 is provided inside the ceramic member 100 is adopted. may be adopted. In addition, the material forming each member in each of the above embodiments is merely an example, and each member may be formed of another material.

Further, the present invention is applicable not only to the electrostatic chuck 10 that holds the semiconductor wafer W using electrostatic attraction, but also to other holding devices (such as vacuum chucks) and heater devices that do not have a base member. be.

10, 10a, 10b: Electrostatic Chuck 100, 100a: Ceramic Member 102: Gas Ejection Hole 110: Gas Ejection Channel 111: First Vertical Channel 112: Second Vertical Channel 114: Horizontal Channel 140: Storage Chamber 144: Upper surface 145: Lower surface 160: Filling member 170: Protrusion 172: Non-forming part 182: First recess 184: Second recess 186: Third recess 190: Protrusion 192: Fourth recess 200: Base member 210: Coolant channel 220: Gas supply channel 221: Gas source connection hole 222: Gas supply hole 230: Non-coolant channel portion 300: Adhesive layer 310: Through hole 400: Chuck electrode 500: Heater electrode 500L : first heater 500R: second heater 506: heater line portion 506C: arc portion 506D: linear portion 506E: polygonal line portion 508: heater pad portion 600: via H1: length H2, H3, H4, H6: depth H5: Protrusion length S1: Attraction surface S2: Bottom surface S3: Top surface S4: Bottom surface W: Semiconductor wafer X1: Hole forming area X2: Reference area X3: Heater high temperature compatible area X4: Route corresponding area X5: Heater low temperature compatible area X6: Area corresponding to low endotherm

Claims (1)

A ceramic member having a substantially planar first surface substantially perpendicular to a first direction and having a plurality of protrusions formed on the first surface; and a heating resistor provided on the ceramic member. ,
In a holding device that holds an object on the first surface of the ceramic member,
The first surface of the ceramic member includes a first surface region and a second surface region located at different positions and including the same number (two or more) of the protrusions,
a non-formation portion of the first surface region where the projection is not formed has a depth less than the length of the projection in the first direction; Having a depth equal to or greater than the length and satisfying either one of being non-circular when viewed in the first direction, and having a substantially planar bottom surface substantially perpendicular to the first direction and a recess is formed in which the area of the substantially planar bottom surface is larger than the cross-sectional area of each projection perpendicular to the first direction,
The recess is not formed in the non-formed portion of the second surface region,
The heat generating resistor has a first heat generating portion and a second heat generating portion having a larger unit heat generation amount than the first heat generating portion,
When viewed from the first direction, the second heat generating portion of the heat generating resistor overlaps at least part of the recess formed in the first surface region.
A holding device characterized by:

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