JP7292100B2 - 弾性表面波素子、フィルタ回路及び電子部品 - Google Patents

弾性表面波素子、フィルタ回路及び電子部品 Download PDF

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Publication number
JP7292100B2
JP7292100B2 JP2019092973A JP2019092973A JP7292100B2 JP 7292100 B2 JP7292100 B2 JP 7292100B2 JP 2019092973 A JP2019092973 A JP 2019092973A JP 2019092973 A JP2019092973 A JP 2019092973A JP 7292100 B2 JP7292100 B2 JP 7292100B2
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Prior art keywords
surface acoustic
electrode
acoustic wave
thickness
piezoelectric material
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JP2019092973A
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Japanese (ja)
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JP2020188408A (ja
JP2020188408A5 (enExample
Inventor
直人 松岡
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NDK Saw Devices Inc
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NDK Saw Devices Inc
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Priority to JP2019092973A priority Critical patent/JP7292100B2/ja
Priority to US16/868,526 priority patent/US11088671B2/en
Priority to CN202010381485.9A priority patent/CN111953309B/zh
Publication of JP2020188408A publication Critical patent/JP2020188408A/ja
Publication of JP2020188408A5 publication Critical patent/JP2020188408A5/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02866—Means for compensation or elimination of undesirable effects of bulk wave excitation and reflections
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02244—Details of microelectro-mechanical resonators
    • H03H9/02259—Driving or detection means
    • H03H9/02275—Comb electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02582—Characteristics of substrate, e.g. cutting angles of diamond substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02992—Details of bus bars, contact pads or other electrical connections for finger electrodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538—Formation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6406—Filters characterised by a particular frequency characteristic

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
JP2019092973A 2019-05-16 2019-05-16 弾性表面波素子、フィルタ回路及び電子部品 Active JP7292100B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2019092973A JP7292100B2 (ja) 2019-05-16 2019-05-16 弾性表面波素子、フィルタ回路及び電子部品
US16/868,526 US11088671B2 (en) 2019-05-16 2020-05-06 Surface acoustic wave device, filter circuit, and electronic component
CN202010381485.9A CN111953309B (zh) 2019-05-16 2020-05-08 表面声波元件、滤波电路以及电子零件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019092973A JP7292100B2 (ja) 2019-05-16 2019-05-16 弾性表面波素子、フィルタ回路及び電子部品

Publications (3)

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JP2020188408A JP2020188408A (ja) 2020-11-19
JP2020188408A5 JP2020188408A5 (enExample) 2022-05-10
JP7292100B2 true JP7292100B2 (ja) 2023-06-16

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US (1) US11088671B2 (enExample)
JP (1) JP7292100B2 (enExample)
CN (1) CN111953309B (enExample)

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CN111602337B (zh) * 2018-01-12 2023-09-12 株式会社村田制作所 弹性波装置、多工器、高频前端电路及通信装置
US11750172B2 (en) 2019-08-21 2023-09-05 Skyworks Solutions, Inc. Multilayer piezoelectric substrate
US11722122B2 (en) * 2019-11-22 2023-08-08 Skyworks Solutions, Inc. Multilayer piezoelectric substrate with high density electrode
CN112653417A (zh) * 2020-12-18 2021-04-13 广东广纳芯科技有限公司 声表面波谐振器及该声表面波谐振器的制造方法
KR102825967B1 (ko) * 2020-12-18 2025-06-26 가부시키가이샤 무라타 세이사쿠쇼 탄성파 장치 및 래더형 필터
CN116584040A (zh) * 2021-02-04 2023-08-11 株式会社村田制作所 弹性波装置
CN116584041A (zh) * 2021-02-04 2023-08-11 株式会社村田制作所 弹性波装置
WO2022264933A1 (ja) * 2021-06-16 2022-12-22 株式会社村田製作所 弾性波装置
CN118077145A (zh) * 2021-10-08 2024-05-24 株式会社村田制作所 弹性波装置
US12483226B2 (en) 2021-12-29 2025-11-25 Skyworks Solutions, Inc. Acoustic wave device with tilted multilayer interdigital transducer electrode
US20230223910A1 (en) 2022-01-13 2023-07-13 Skyworks Solutions, Inc. Method of making acoustic wave device with vertically mass loaded multi-layer interdigital transducer electrode for transverse mode suppression
WO2023204250A1 (ja) * 2022-04-20 2023-10-26 株式会社村田製作所 弾性波装置
CN117200743A (zh) * 2022-05-31 2023-12-08 华为技术有限公司 滤波器及电子设备
CN117375554A (zh) * 2022-06-30 2024-01-09 华为技术有限公司 声表面波滤波器、装置和电子设备
JP2024047202A (ja) * 2022-09-26 2024-04-05 株式会社村田製作所 弾性波装置
CN115395918B (zh) * 2022-10-27 2023-08-29 中国科学技术大学 声波谐振器及其设计方法、制造方法
WO2024119507A1 (zh) * 2022-12-09 2024-06-13 中国科学技术大学 体声波谐振器及其制备方法
CN116827298A (zh) * 2023-06-28 2023-09-29 中国科学技术大学 一种声波谐振器
CN117013984B (zh) * 2023-08-21 2024-05-28 天通瑞宏科技有限公司 一种键合晶圆及薄膜声表面波器件
CN117498826B (zh) * 2023-11-03 2025-10-21 上海馨欧集成微电有限公司 一种声波谐振器、滤波器及通信器件
CN119182379B (zh) * 2023-12-27 2025-10-21 上海馨欧集成微电有限公司 一种声波滤波器及其制备方法
CN119582799B (zh) * 2024-10-29 2025-12-02 锐石创芯(重庆)微电子有限公司 声表面波器件、射频前端模组和电子设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006025396A (ja) 2004-06-09 2006-01-26 Seiko Epson Corp 弾性表面波装置、その製造方法、および電子機器
WO2008078481A1 (ja) 2006-12-25 2008-07-03 Murata Manufacturing Co., Ltd. 弾性境界波装置
US20170033756A1 (en) 2015-07-28 2017-02-02 Rf Micro Devices, Inc. Methods for fabrication of bonded wafers and surface acoustic wave devices using same
WO2018097016A1 (ja) 2016-11-25 2018-05-31 国立大学法人東北大学 弾性波デバイス

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JPS5574660A (en) 1978-11-29 1980-06-05 Shinko Electric Co Ltd Handy type memo unit
JP3952666B2 (ja) 2000-06-23 2007-08-01 株式会社日立製作所 弾性表面波素子
US7161448B2 (en) * 2004-06-14 2007-01-09 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Acoustic resonator performance enhancements using recessed region
JP2011166259A (ja) * 2010-02-05 2011-08-25 Murata Mfg Co Ltd 弾性表面波装置
EP2658123B1 (en) 2010-12-24 2019-02-13 Murata Manufacturing Co., Ltd. Elastic wave device and method for manufacturing the same.
WO2013141168A1 (ja) * 2012-03-23 2013-09-26 株式会社村田製作所 弾性波装置及びその製造方法
JP6360847B2 (ja) * 2016-03-18 2018-07-18 太陽誘電株式会社 弾性波デバイス

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2006025396A (ja) 2004-06-09 2006-01-26 Seiko Epson Corp 弾性表面波装置、その製造方法、および電子機器
WO2008078481A1 (ja) 2006-12-25 2008-07-03 Murata Manufacturing Co., Ltd. 弾性境界波装置
US20170033756A1 (en) 2015-07-28 2017-02-02 Rf Micro Devices, Inc. Methods for fabrication of bonded wafers and surface acoustic wave devices using same
WO2018097016A1 (ja) 2016-11-25 2018-05-31 国立大学法人東北大学 弾性波デバイス

Also Published As

Publication number Publication date
JP2020188408A (ja) 2020-11-19
US20200366270A1 (en) 2020-11-19
CN111953309A (zh) 2020-11-17
CN111953309B (zh) 2023-08-18
US11088671B2 (en) 2021-08-10

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