JP7288200B2 - Light emitting device and package - Google Patents

Description

TECHNICAL FIELD The present disclosure relates to a light-emitting device, a manufacturing method thereof, and a package.

2. Description of the Related Art As a light emitting device having a light emitting element such as a light emitting diode (LED), there is known a combination of a light emitting element and a wavelength converting member arranged to face the light emitting surface of the light emitting element.

JP 2013-232503 A

In light emitting devices, there is a demand for a wavelength conversion member whose deterioration is further suppressed.

An embodiment of the present invention includes the following configurations.
a light emitting element;
a wavelength conversion member containing a resin material and phosphor particles and covering the light emitting element;
a coating layer covering at least part of the surface of the wavelength conversion member;
with
The light-emitting device, wherein the surface roughness of the coating layer is smaller than the surface roughness of at least part of the surface of the wavelength conversion member.

As described above, deterioration of the wavelength conversion member is further suppressed in the light emitting device.

BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic sectional drawing which shows an example of the light-emitting device which concerns on embodiment. BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic sectional drawing which shows an example of the light-emitting device which concerns on embodiment. BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic sectional drawing which shows an example of the light-emitting device which concerns on embodiment. BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic sectional drawing which shows an example of the light-emitting device which concerns on embodiment. It is a schematic sectional drawing which illustrates the convex part in the cut surface of a wavelength conversion member. BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic sectional drawing which shows an example of the light-emitting device which concerns on embodiment. BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic sectional drawing which shows an example of the light-emitting device which concerns on embodiment. BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic sectional drawing which shows an example of the light-emitting device which concerns on embodiment. 7A to 7D are schematic process cross-sectional views showing an example of a method for manufacturing the light emitting device shown in FIG. 6; 7A to 7D are schematic process cross-sectional views showing an example of a method for manufacturing the light emitting device shown in FIG. 6; 7A to 7D are schematic process cross-sectional views showing an example of a method for manufacturing the light emitting device shown in FIG. 6; 7A to 7D are schematic process cross-sectional views showing an example of a method for manufacturing the light emitting device shown in FIG. 6; 8A to 8D are schematic process cross-sectional views showing an example of a method for manufacturing the light emitting device shown in FIG. 7; 8A to 8D are schematic process cross-sectional views showing an example of a method for manufacturing the light emitting device shown in FIG. 7; 8A to 8D are schematic process cross-sectional views showing an example of a method for manufacturing the light emitting device shown in FIG. 7; 8A to 8D are schematic process cross-sectional views showing an example of a method for manufacturing the light emitting device shown in FIG. 7; 1A to 1D are schematic process cross-sectional views showing an example of a method for manufacturing a light emitting device according to an embodiment; 1A to 1D are schematic process cross-sectional views showing an example of a method for manufacturing a light emitting device according to an embodiment; 1A to 1D are schematic process cross-sectional views showing an example of a method for manufacturing a light emitting device according to an embodiment; 1A to 1D are schematic process cross-sectional views showing an example of a method for manufacturing a light emitting device according to an embodiment; It is a schematic sectional drawing which shows an example of the package which concerns on embodiment. It is a schematic sectional drawing which shows an example of the package which concerns on embodiment. FIG. 4A is a schematic cross-sectional view showing a light emitting device picked up from an embossed carrier; 1A to 1D are schematic process cross-sectional views showing an example of a method for manufacturing a light emitting device according to an embodiment; 1A to 1D are schematic process cross-sectional views showing an example of a method for manufacturing a light emitting device according to an embodiment; 1A to 1D are schematic process cross-sectional views showing an example of a method for manufacturing a light emitting device according to an embodiment; 15C is a schematic cross-sectional view showing a light-emitting device obtained by the steps of FIGS. 15A to 15C; FIG. 1A to 1D are schematic process cross-sectional views showing an example of a method for manufacturing a light emitting device according to an embodiment; 1A to 1D are schematic process cross-sectional views showing an example of a method for manufacturing a light emitting device according to an embodiment; 1A to 1D are schematic process cross-sectional views showing an example of a method for manufacturing a light emitting device according to an embodiment; 17C is a schematic cross-sectional view showing a light emitting device obtained by the steps of FIGS. 17A to 17C; FIG.

A mode for carrying out the present invention will be described below with reference to the drawings. However, the embodiments shown below exemplify a light-emitting device, a method for manufacturing the same, and a package for embodying the technical idea of the present invention. It is not limited to the following. Unless otherwise specified, the dimensions, materials, shapes, relative positions, etc. of components are intended to be illustrative rather than limiting the scope of the present invention. The sizes and positional relationships of members shown in each drawing may be exaggerated for ease of understanding. In addition, some drawings may be omitted from each drawing for the sake of clarity.

[Light emitting device]
FIG. 1 is a schematic cross-sectional view showing an example of a light emitting device 100 according to an embodiment. The light-emitting device 100 includes a light-emitting element 10, a wavelength conversion member 20, and a coating layer 30 as main components.

The light emitting element 10 is a member capable of emitting light. The light emitting device 10 includes a semiconductor light emitting device capable of emitting light of any wavelength. The wavelength conversion member 20 is a member that converts part or all of the light emitted by the light emitting element 10 into light of another wavelength. The wavelength conversion member 20 includes, for example, a resin material and phosphor particles. The wavelength conversion member 20 is arranged so as to cover the light emitting element 10 . In the example shown in FIG. 1, it is arranged so as to cover the light emitting surface 11 of the light emitting element 10 . The coating layer 30 covers at least part of the surface of the wavelength conversion member 20 .

The surface roughness of the coating layer 30 of the light emitting device 100 according to the embodiment is smaller than the surface roughness of at least part of the surface of the wavelength conversion member 20 . Specifically, the surface roughness of the portion of the coating layer 30 that covers the wavelength conversion member 20 is smaller than the surface roughness of the portion of the surface of the wavelength conversion member 20 that is covered with the coating layer 30 .

Due to the surface roughness of the coating layer 30 , deterioration of the wavelength conversion member 20 is further suppressed in the light emitting device 100 according to the embodiment. This will be explained in detail. Some phosphor particles may contain a composition with low moisture resistance. Therefore, when the phosphor particles are exposed on the surface of the wavelength conversion member 20, the characteristics of the wavelength conversion member 20 are likely to deteriorate. Moreover, when the surface of the wavelength conversion member 20 is a cut surface cut by a dicing blade or the like, some phosphor particles may be damaged as shown in FIG.

In addition, the resin material that forms the light-emitting surface of the light-emitting device is required to have excellent optical properties such as high translucency and resistance to light emitted from the light-emitting element. In some cases, the resin material selected with priority given to these optical properties is not necessarily a material with high moisture resistance or a material with low moisture permeability.

Therefore, the light-emitting device 100 according to the embodiment includes the coating layer 30 covering the surface of the wavelength conversion member 20 , and the surface roughness of the coating layer 30 is made smaller than the surface roughness of the wavelength conversion member 20 . A coating layer 30 with a small surface roughness has a relatively small specific surface area in contact with the atmosphere. Therefore, the area of the coating layer 30 that is in contact with moisture is reduced, and deterioration due to moisture can be suppressed. As a result, the light emitting device 100 according to the embodiment covers the wavelength conversion member 20 with the coating layer 30 and reduces the specific surface area of the coating layer 30, thereby more effectively suppressing deterioration of the wavelength conversion member 20. . Further, by providing the coating layer 30 having a small specific surface area and a smooth surface, it is possible to improve the pickup accuracy of the light emitting device 100 in the package 300 described later.

The coating layer 30 as described above is arranged to cover at least part of the surface of the wavelength conversion member 20 . In particular, when the surface of the wavelength conversion member 20 is a mechanically processed surface such as a cut surface or a ground surface, for example, the phosphor particles 27 are cut as shown in FIG. Alternatively, the phosphor particles 27 are likely to be exposed from the resin. In addition, the phosphor particles 27 may fall off and recesses may be formed in the resin 26 . By covering the surface of the wavelength conversion member 20 with the coating layer 30, deterioration of the wavelength conversion member 20 due to moisture absorption can be easily suppressed. In addition, when the wavelength conversion member 20 contains a large amount of phosphor particles 27, irregularities due to the phosphor particles 27 are likely to be formed on the surface of the wavelength conversion member 20 without performing processing such as cutting or grinding. Even in such a case, it is easy to suppress deterioration of the wavelength conversion member 20 due to moisture absorption by covering it with the coating layer 30 .

When the surface roughness of the wavelength conversion member 20 is, for example, Sa0.9 μm or more, the surface roughness of the coating layer 30 is preferably Sa0.7 μm or less, for example. Thereby, moisture absorption deterioration of the wavelength conversion member 20 can be suppressed more effectively. The "surface roughness Sa" is an index of roughness obtained by extending the arithmetic mean roughness Ra to the surface. That is, the surface roughness Sa represents the average of the absolute values of the height differences at each point with respect to the average surface of the target surface.

The index of the surface roughness of the coating layer is not necessarily limited only to Sa. For example, the surface roughness index may be the arithmetic mean roughness Ra. In this case, the surface roughness of the coating layer may be Ra 0.5 μm or less, thereby more effectively suppressing moisture absorption deterioration of the wavelength conversion member.

The surface roughness of the coating layer 30 and the wavelength conversion member 20 can be calculated from an image obtained with a laser microscope after the light emitting device is cut out by cutting with a dicing blade or the like. In particular, in the present disclosure, the value of surface roughness Sa refers to a value measured using Model VK-200 manufactured by Keyence.

In the light emitting device 100 according to the embodiment, the coating layer 30 may have lower tackiness than the wavelength conversion member 20 . The term “tackiness” as used herein broadly refers to “ease of sticking”, and narrowly, the target elements (i.e., the coating layer 30 and the wavelength conversion member 20) are different from other elements (e.g., , refers to the "stickiness" exhibited by the embossed carrier 200, which will be described later. If the tackiness is high, sticking becomes easy, and if the tackiness is low, sticking becomes difficult. By making the surface roughness of the coating layer 30 covering the surface of the wavelength conversion member 20 smaller than the surface roughness of the wavelength conversion member 20 , the tackiness of the coating layer 30 can be made lower than that of the wavelength conversion member 20 . As a result, the accuracy of picking up the light emitting device 100 from the embossed carrier 200 can be improved in the package 300 to be described later.

If the surface of the wavelength conversion member 20 is a mechanically processed surface such as a cut surface or a ground surface, the tackiness tends to be higher than that of a surface that is not mechanically processed. This phenomenon occurs when the resin used for the wavelength conversion member is a resin (for example, a silicone resin) that is cured by an addition-curing reaction using a catalyst. In such a wavelength conversion member, there are cases where the curing reaction is not sufficient inside the member, particularly around the phosphor particles. A surface that is cut or ground after curing is a surface on which such insufficiently cured resin material is exposed. Therefore, the tackiness tends to be higher than that of a surface that is not mechanically processed. By covering such a surface with the coating layer 30, the tackiness of the light emitting device 100 can be reduced.

For the tackiness, for example, the method disclosed in JP-A-2017-226782 can be used. Specifically, as a tool for measuring the tackiness, a tool having a flat tip surface of about 1 to 3 mm is prepared. A resin sheet obtained by curing the wavelength conversion member is prepared as a measurement sample. Then, the tip surface of the tool is pressed against the resin sheet for a certain period of time, and then peel strength is measured when the resin sheet is peeled off. Thereby, tackiness can be measured.

The formation position of the coating layer will be described by taking the light emitting device 100 (100A to 100F) shown in FIGS. 1 to 4, 6 and 7 as an example. In addition to the light emitting element 10, the wavelength converting member 20, and the coating layer 30, the light emitting device 100 exemplified here has the following configuration.

The light-emitting device can include a light-reflective covering member in addition to the above constituent members. For example, the light emitting device 100 (100A to 100E) shown in FIGS. 1 to 4 and 6 includes a sealing member 40 as a covering member covering the side surfaces of the semiconductor laminate 15 and the electrode 16 of the light emitting element 10. FIG. Further, the light-emitting device 100 (100F) shown in FIG. 7 includes a sealing member 50 as a covering member that covers the side surfaces of the electrodes 16 of the light-emitting element 10 . Alternatively, a light-emitting device without a covering member may be used.

In addition, the light emitting device 100 can include a conductive member 17 electrically connected to the electrodes 16 of the light emitting element 10, as shown in FIG. Furthermore, the light emitting device 100 can include a translucent member (not shown) on the upper surface of the wavelength converting member 20 . Also, a bonding member (not shown) that bonds the wavelength conversion member 20 and the light emitting element 10 can be provided.

Each light-emitting device 100 has an upper surface 21 and a side surface 23 as surfaces of the wavelength conversion member 20 . In the light-emitting devices 100A to 100E, the wavelength conversion member 20 covers the upper surface of the light-emitting element 10 directly or indirectly. A sealing member 40 is arranged on the side of the light emitting element 10 .

In the light-emitting device 100F shown in FIG. 7, the wavelength conversion member 20 directly or indirectly covers the upper surface 11 and the side surface 13 of the semiconductor laminate 15 of the light-emitting element 10 . A sealing member 50 is arranged on the side of the electrode 16 of the light emitting element 10 .

In the light emitting device 100 (100A) shown in FIG. 1, the coating layer 30 continuously covers the side surface 23 of the wavelength conversion member 20 from top to bottom. A portion of coating layer 30 extends from side surface 23 of wavelength conversion member 20 and also partially covers side surface 43 of sealing member 40 . Furthermore, part of the coating layer 30 also covers part of the upper surface 21 of the wavelength converting member 20 . For example, when the side surface 23 of the wavelength conversion member 20 is the cut surface, it is preferable to cover the entire side surface 23 in this manner. Furthermore, by continuously covering not only the side surface 23 but also a portion of the side surface 43 of the sealing member 40 continuing from the side surface 23 with the coating layer 30, the coating layer 30 can be made difficult to peel off. Moreover, since the interface between the sealing member 40 and the wavelength conversion member 20 is covered with the coating layer 30, it is possible to prevent moisture from entering from this interface. Further, by continuing to the upper surface 21 of the wavelength conversion member 20 , the corners of the wavelength conversion member 20 that become the corners of the light emitting device 100 are covered with the coating layer 30 . Thereby, the coating layer 30 can be made difficult to peel off. Moreover, only the outer peripheral portion of the upper surface 21 of the wavelength conversion member 20 is covered with the coating layer 30, and the central portion of the upper surface 21 of the wavelength conversion member 20 is exposed. In particular, the upper surface of the wavelength conversion member 20 directly above the light emitting element 10 is exposed. For example, when the coating layer 30 absorbs part of the light, not covering the wavelength conversion member 20 with the coating layer 30 in this way can suppress a decrease in light extraction efficiency. Further, when the upper surface 21 of the wavelength conversion member 20 has high tackiness, the upper surface of the coating layer 30 covering the outer peripheral portion of the upper surface 21 is higher than the upper surface of the wavelength conversion member 20 as shown in FIG. Therefore, for example, the embossed carrier 200 or the cover tape, which will be described later, and the upper surface 21 of the wavelength conversion member 20 are less likely to come into contact with each other. This can suppress deterioration in pick-up performance.

In the light emitting device 100 (100B) shown in FIG. 2, the upper surface 21 of the wavelength converting member 20 is covered with the coating layer 30. As shown in FIG. For example, when the upper surface 21 of the wavelength conversion member 20 is a ground surface, it is preferable to cover the entire surface of the upper surface 21 in this manner.

In the light emitting device 100 (100C) shown in FIG. 3, only the side surface 23 of the wavelength converting member 20 is covered with the coating layer 30. As shown in FIG. For example, when the side surface 23 of the wavelength conversion member 20 has a large surface roughness, in other words, when the side surface 23 has large unevenness, the coating layer 30 can be in contact with the coating layer 30 over a wide area due to these unevenness. Therefore, even if the coating layer 30 covers only the wavelength conversion member 20, it can be made difficult to peel off.

In the light-emitting device 100 (100D) shown in FIG. 4, the entire upper surface 21 and the entire side surface 23 of the wavelength conversion member 20 are covered with the coating layer 30 . For example, when the side surface 23 of the wavelength conversion member 20 is the cut surface, the surface of the wavelength conversion member 20 is covered with a large area, similarly to the light emitting device 100A shown in FIG. 1, thereby more efficiently suppressing moisture absorption. be able to.

In the light emitting device 100 (100E) shown in FIG. 6, the coating layer 30 is provided so as to cover the side surface 23 of the wavelength conversion member 20 and the side surface 43 of the sealing member 40. As shown in FIG. As a result, the smoothness of the side surface of the light emitting device 100 as a whole is improved, so that the accuracy of picking up the light emitting device 100 from the embossed carrier 200 in the package 300 described later can be improved.

In the light-emitting device 100 (100F) shown in FIG. 7, the wavelength conversion member 20 covers the upper surface 11 and the side surface (third surface) 13 of the semiconductor laminate 15 of the light-emitting element 10. As shown in FIG. In the light emitting device 100</b>F, the coating layer 30 is provided so as to cover the side surface 23 of the wavelength conversion member 20 . As a result, the smoothness of the side surface of the light emitting device 100 is improved, so that the accuracy of picking up the light emitting device 100 from the embossed carrier 200 in the package 300 described later can be improved.

Each component of the light emitting device 100 according to the embodiment will be described in detail below.

・Light emitting element 10
The light emitting device 10 includes a semiconductor laminate 15 and electrodes 16 . As shown in FIG. 1, the light-emitting element 10 includes a light-emitting surface 11 (also referred to as a main light-emitting surface), a side surface 13 extending in a different direction (for example, perpendicular direction) to the light-emitting surface 11, and a surface opposite to the light-emitting surface 11. and an electrode forming surface 12 which is a side surface and on which a pair of positive and negative electrodes 16 are provided.

As the light emitting element 10, a semiconductor light emitting element capable of emitting light of any wavelength can be selected. For example, a light emitting diode or the like can be selected as the light emitting element 10 . As an example, the light emitting element 10 may be one that emits blue light. Without being limited to this, the light emitting element 10 may be one that emits light of a color other than blue light.

For example, a nitride semiconductor (In _x Al _y Ga _1-xy N, 0≦X, 0≦Y, X+Y≦1) is used as the semiconductor laminate 15 of the light emitting element 10 capable of emitting blue light. can be used. In this case, the nitride-based semiconductor light-emitting device has, for example, a sapphire substrate and a nitride-based semiconductor laminated structure laminated on the sapphire substrate. The nitride-based semiconductor multilayer structure includes a light-emitting layer, and an n-type nitride-based semiconductor layer and a p-type nitride-based semiconductor layer positioned to sandwich the light-emitting layer. An n-side electrode and a p-side electrode, which are electrodes 16, are electrically connected to the n-type nitride semiconductor layer and the p-type nitride semiconductor layer, respectively.

The light emitting element 10 may have any shape in plan view, for example, a shape such as a square or a rectangle. Furthermore, polygons such as triangles or hexagons may be used. The size of the light emitting element 10 in plan view can be, for example, 250 μm or more and 1000 μm or less, preferably 500 μm or more and 750 μm or less. The thickness of the light emitting element 10 can be 100 μm or more and 500 μm or less, preferably 150 μm or more and 340 μm or less.

・Wavelength conversion member 20
The wavelength conversion member 20 is a member that functions as a light extraction surface of the light emitting device. The wavelength conversion member 20 is a member capable of absorbing light emitted from the light emitting element 10 and converting it into light of a different wavelength. The wavelength conversion member 20 includes a resin material 26 and phosphor particles 27 contained therein (see FIG. 5). In the wavelength conversion member 20 , the resin material 26 is a base material containing the phosphor particles 27 . For example, the resin material 26 may include at least one selected from the group consisting of silicone resins, epoxy resins, phenol resins, polycarbonate resins, acrylic resins, TPX resins, polynorbornene resins, modified resins thereof, and hybrid resins. can. The phosphor constituting the phosphor particles 27 is, for example, a cerium-activated yttrium-aluminum-garnet-based phosphor (YAG:Ce) or a cerium-activated phosphor that can be excited by a blue light-emitting element or an ultraviolet light-emitting element. lutetium-aluminum-garnet phosphor (LAG:Ce), nitrogen-containing calcium aluminosilicate phosphor (CaO- _{Al2O3 - SiO2} :Eu) activated with europium and/or chromium, activated with europium silicate-based phosphor ((Sr, Ba) ₂ SiO ₄ :Eu), β-sialon phosphor, CaAlSiN ₃ :Eu CASN-based phosphor, (Sr, Ca)AlSiN ₃ :Eu At least one selected from nitride-based phosphors such as SCASN-based phosphors, KSF-based phosphors represented by K ₂ SiF ₆ :Mn, sulfide-based phosphors, and quantum dot phosphors can be mentioned. . The wavelength conversion member 20 may contain a single type of phosphor particles, or may contain a plurality of types of phosphor particles.

・Coating layer 30
The coating layer 30 is a layer that covers at least the surface of the wavelength conversion member 20 . The coating layer is preferably a transparent layer. For example, the coating layer 30 may be made of transparent resin. As the transparent resin, at least one selected from the group consisting of silicone resins, acrylic resins, polycarbonate resins, polyester resins, epoxy resins and vinyl chloride resins can be used.

Coating layer 30 preferably has a thickness of about 2 μm or greater, such as a thickness of about 5 μm or greater. By setting the thickness to be greater than 2 μm, the coating layer 30 can be easily formed as a layer that does not easily conform to irregularities caused by the surface roughness of the wavelength conversion member 20 . Thereby, it is easy to form the coating layer 30 having a surface roughness smaller than that of the wavelength conversion member 20 . The upper limit of the thickness of the coating layer 30 can be 10 μm. Therefore, the thickness of the coating layer 30 can be, for example, 2 μm or more and 10 μm or less, preferably 2 μm or more and 5 μm or less. The thickness of the coating layer 30 is measured, for example, as shown in FIG. ), the film thickness of the coating layer 30 is determined by averaging the values obtained by measuring the film thickness of the coating layer 30 .

The coating layer 30 may be, for example, silicone resin. In the case of silicone resin, the surface roughness of coating layer 30 tends to be smaller than the surface roughness of wavelength conversion member 20 . Also, the coating layer 30 formed from a silicone resin tends to be a layer with low tackiness. As the silicone resin, for example, a type that is cured by heat or ultraviolet rays can be used. Alternatively, a room-temperature-curable silicone resin, that is, a silicone resin that cures without heat treatment (for example, substantially completes curing within one hour at room temperature) can be used. Such a silicone resin particularly tends to form the coating layer 30 having a surface roughness smaller than that of the wavelength conversion member 20 . For example, when the resin used for the wavelength conversion member 20 is an addition-curable silicone resin with a catalyst, the uncured component (eg, Si—OH) present on the cut surface exposed by cutting and the coating layer 30 It reacts with the room temperature curing type silicone resin to form new Si--O--Si bonds. That is, the reaction between the cut surface of the wavelength conversion member 20 and the coating layer 30 forms the coating layer 30 having excellent adhesion to the wavelength conversion member 20 as compared with a coating layer that simply covers the cut surface. . Furthermore, the uncured component of the wavelength conversion member 20, which is one of the causes of low water resistance, reacts with the coating layer 30, thereby improving the water resistance.

・sealing member 40
The sealing member 40 is a member arranged to cover the side surface and/or the bottom surface of the light emitting element. The sealing member 40 contains, for example, a resin material as a base material. As the resin material, at least one selected from the group consisting of silicone resins, epoxy resins, phenolic resins, polycarbonate resins, acrylic resins, TPX resins, polynorbornene resins, modified resins and hybrid resins thereof can be used. Of these, silicone resins are preferable because they are excellent in heat resistance and/or light resistance. If necessary, the sealing member may contain light-reflecting particles from the viewpoint of imparting light reflectivity. Materials for such light-reflective particles include, for example, titanium oxide, silicon oxide, zirconium oxide, magnesium oxide, yttrium oxide, yttria-stabilized zirconia, calcium carbonate, calcium hydroxide, calcium silicate, niobium oxide, and zinc oxide. , barium titanate, potassium titanate, magnesium fluoride, alumina, and the like can be used. In addition, in order to improve heat dissipation, fillers such as aluminum nitride, boron nitride and mullite may be contained.

[Method for manufacturing light-emitting device]
Next, a method for manufacturing the light emitting device according to the embodiment will be described. A manufacturing method according to an embodiment is a method for manufacturing the light-emitting device described above,
Cutting a device precursor having a plurality of light emitting elements arranged on a wavelength conversion material and a sealing material covering the plurality of light emitting elements, or a device precursor having a wavelength conversion material covering the plurality of light emitting elements a step of singulating by
and providing a coating layer having a surface roughness smaller than the surface roughness of the cut surface obtained by cutting.

9A to 9D and 10A to 10D are schematic process cross-sectional views showing an example of the manufacturing method according to the embodiment, respectively. In the manufacturing method according to the embodiment, the device precursor 100' to be singulated has the configuration shown in FIG. 9A or FIG. 10A. The device precursor 100 ′ of FIG. 9A comprises a plurality of light emitting elements 10 disposed on a wavelength converting material 20 ′ and an encapsulant 40 ′ covering the plurality of light emitting elements 10 . That is, in the device precursor 100' of FIG. 9A, the plurality of light emitting elements 10 are covered with the sealing material 40' on the wavelength conversion material 20'. On the other hand, the device precursor 100' of FIG. That is, in the device precursor 100' of FIG. 10A, the plurality of light emitting elements 10 are entirely covered with the wavelength conversion material 20'.

The wavelength conversion material 20 ′ corresponds to a member that becomes the wavelength conversion member 20 of the light emitting device 100 . The wavelength conversion material 20' contains a resin material and phosphor particles, and has a sheet form that enables arrangement of a plurality of light emitting elements. The sealing material 40 ′ corresponds to a member that becomes the sealing member 40 of the light emitting device 100 . The encapsulant 40' contains a resin material, and if necessary, the resin material contains a filler.

In the manufacturing method according to the embodiment, in the step of singulating the device precursor 100′, the device precursor 100′ includes at least one light emitting element 10, as shown in FIGS. 9B and 9C and FIGS. is disconnected.

Mechanical means may be used to singulate the device precursor 100'. For example, a dicing blade can be used as a mechanical means. In the singulation of the device precursor 100' shown in Figures 9B and 9C, both the wavelength converting material 20' and the encapsulant 40' of the device precursor 100' are cut. In the singulation of the device precursor 100' shown in Figures 10B and 10C, the wavelength converting material 20' of the device precursor 100' is cut.

Next, a coating layer is formed. A spray method or a dipping method may be used to form the coating layer 30 . A resin raw material, which is a coating raw material, is cured after being applied to the surface of the wavelength conversion member. By spraying or dipping, the coating layer 30 can be formed not only on the cut surface of the device precursor 100' but also on its upper surface. Also, in such a technique, a solvent may be added to the resin raw material that is the coating raw material. Thereby, the resin raw material can be more preferably applied to the surface of the wavelength conversion member.

By providing the coating layer 30, the desired light-emitting device 100 can be finally obtained. From the device precursor 100' shown in FIG. 9A, the light emitting device 100 (100E) shown in FIG. 6 can be finally obtained through the steps of FIGS. 9B to 9D. Further, from the device precursor 100' shown in FIG. 10A, the light emitting device 100 (100F) shown in FIG. 7 can be finally obtained through the steps of FIGS. 10B to 10D.

The manufacturing method according to the embodiment is not limited to the process of FIGS. 9A-9D and FIGS. 10A-10D, but may follow the process shown in FIGS. 11A-11D, for example. In the process of FIGS. 11A-11D, the device precursor 100' subjected to singulation has an orientation reversed from that shown in FIGS. 9A-9D and 10A-10D. Specifically, the device precursor 100' of FIGS. 11A to 11D is oriented so that the electrodes 16 of the light emitting elements 10 are positioned higher during the singulation process. As a result, the division line for singulation can be determined with reference to the position of the electrode 16 from above, and a more suitable singulation process can be performed.

11A-11D, the device precursor 100' is oriented such that the electrode 16 of the light emitting element 10 is positioned lower during the formation of the coating layer 30 after singulation. Such orientation change can be implemented by interposing a so-called transfer process. Similarly, when the process moves from FIG. 9A to FIG. 9B or from FIG. 10A to FIG. can be done with

[Package]
Next, a package according to the embodiment will be described. A package according to an embodiment includes the above-described light emitting device and an embossed carrier,
A light emitting device is housed in the recess of the embossed carrier, and the coating layer of the light emitting device faces the inner surface of the recess of the embossed carrier.

FIG. 12 is a schematic cross-sectional view of the package 300 according to the embodiment. As illustrated, in the package 300 , the embossed carrier 200 houses the light emitting device 100 . More specifically, each recess 250 of the embossed carrier 200 accommodates the light emitting device 100 described above.

The embossed carrier 200 is a member having a plurality of recesses 250 that accommodate the light emitting device 100 . The embossed carrier 200 has an elongated tape shape. The plurality of recesses 250 of the embossed carrier 200 are arranged at predetermined intervals in the longitudinal direction of the embossed carrier 200 . The embossed carrier in which the light-emitting device is housed in each recess 250 can be wound up, for example, on a reel and transported to a supply place of the light-emitting device. The embossed carrier 200 may further include a cover member 270 that closes the recesses 250 from above (see FIG. 13). Cover member 270 may be, for example, a transparent member.

In the package 300 according to the embodiment, the light emitting device 100 is housed so that the coating layer 30 faces the inner surface 250a of the recess 250 of the embossed carrier 200 . That is, the light emitting device 100 is housed in the embossed carrier 200 so that the coating layer 30 having a surface roughness less than that of the wavelength conversion member directly faces the side surface 255 and/or the bottom surface 257 of each recess 250 .

Since the light-emitting device 100 includes the coating layer 30 having a surface roughness smaller than that of the wavelength conversion member 20 , the package 300 improves the accuracy of picking up the light-emitting device 100 from the embossed carrier 200 . In other words, if the surface roughness of the outer surface of the light-emitting device is large, when the light-emitting device comes into contact with the side surface of the concave portion of the embossed carrier, the effect of the frictional force with the side surface may become excessive, resulting in the adsorption of the light-emitting device. A light-emitting device picked up by a nozzle or the like causes misalignment. In particular, misalignment is likely to occur between pickup means such as a suction nozzle and the light emitting device. In the package 300 according to the embodiment, the surface roughness of the outer surface of the light-emitting device 100 is reduced due to the coating layer 30, so excessive interference with the concave side surface 255 of the embossed carrier 200 is reduced. (See FIG. 14). Therefore, the positional deviation of the light emitting device 100 picked up by the suction nozzle 400 of the mounter is suppressed. Thereby, the light-emitting device 100 can be used for a desired application (for example, secondary mounting).

In the package 300 according to the embodiment, the light-emitting device 100 may be housed in the concave portion 250 of the embossed carrier 200 in the orientation shown in FIG. That is, the light emitting device 100 may be housed in the recess 250 with the wavelength conversion member 20 facing the bottom surface 257 of the recess 250 .

When the coating layer 30 faces the bottom surface 257 of the concave portion 250 of the embossed carrier 200 in this way, excessive interference received from the bottom surface 257 of the light emitting device 100 is reduced. In other words, since the coating layer 30 is less likely to stick to the bottom surface 257, mistakes in picking out from the embossed carrier 200 are reduced, and the pickup accuracy is further improved.

Although the embodiments of the present invention have been described above, they are merely examples of typical examples. Therefore, the present invention is not limited to this, but can be applied to various aspects.

For example, a method of manufacturing a light emitting device according to embodiments may follow the process illustrated in FIGS. 15A-15C. In the process of Figures 15A-15C, a coating layer 30 is formed on a half-cut device precursor 100'. In other words, the cutting in the singulation process is divided into two stages. In the former cutting, the wavelength conversion material 20' is not cut by a full cut, but is cut up to the position where the wavelength conversion material 20' is cut. In such a process, the light-emitting device 100 (100G) shown in FIG. 16 can be obtained.

Similarly, a method of manufacturing a light emitting device according to embodiments may follow the process shown in FIGS. 17A-17C. The process of Figures 17A-17C also forms a coating layer 30 on a half-cut device precursor 100'. Specifically, cutting in singulation processing is divided into two stages. In the former cutting, full cutting is not performed, but the wavelength conversion material 20′ is cut further downward until it exceeds the cut position. In such a process, the light emitting device 100 (100H) shown in FIG. 18 can be obtained.
It should be noted that the above-described present invention includes the following aspects.
A first aspect: a light-emitting element;
a wavelength conversion member that includes a resin material and phosphor particles and covers the light emitting element;
a coating layer covering at least part of the surface of the wavelength conversion member;
with
The light-emitting device, wherein the surface roughness of the coating layer is smaller than the surface roughness of the at least part.
Second Aspect: The light-emitting device according to the first aspect, wherein the surface of the wavelength conversion member includes a top surface and side surfaces, and the coating layer is disposed on at least one of the top surface and the side surfaces.
Third Aspect: The light-emitting device according to the second aspect, wherein the side surface of the wavelength conversion member is a cut surface, and the coating layer covers the cut surface.
Fourth Aspect: The light-emitting device according to the second aspect or the third aspect, wherein the upper surface of the wavelength conversion member is a polished surface, and the coating layer covers the polished surface.
Fifth Aspect: The light-emitting device according to any one of the first to fourth aspects, wherein the coating layer has lower tackiness than the wavelength conversion member.
Aspect 6: The light-emitting device of any one of Aspects 1 to 5, wherein the coating layer has a smooth outer surface.
Aspect 7: The light-emitting device according to any one of Aspects 1 to 6, wherein the surface roughness of the coating layer is Sa of 0.7 μm or less.
Eighth Aspect: Any one of the first to seventh aspects, wherein the at least part of the surface of the wavelength conversion member has a plurality of projections, and the projections include part of the phosphor particles. A light-emitting device.
Ninth Aspect: The light-emitting device according to any one of the third to eighth aspects depending on the second aspect, wherein the surface roughness of the side surface of the wavelength conversion member is Sa of 0.9 μm or more.
Tenth aspect: the light-emitting element is
a semiconductor laminate comprising a first surface, a second surface opposite to the first surface, and a third surface between the first surface and the second surface;
a pair of positive and negative electrodes arranged on the second surface;
including
The light emitting device according to any one of the first to ninth aspects, wherein the wavelength conversion member covers the first surface of the semiconductor laminate.
Eleventh aspect: The light-emitting device according to the tenth aspect, wherein the wavelength conversion member covers the third surface of the semiconductor laminate.
Twelfth mode: The light-emitting device according to the tenth mode, further comprising a sealing member that covers the third surface of the semiconductor laminate.
Thirteenth Aspect: The light-emitting device according to the twelfth aspect, wherein the side surface of the sealing member is covered with the coating layer.
Fourteenth aspect: A package comprising the light emitting device according to any one of the first aspect to the thirteenth aspect and an embossed carrier,
A package, wherein the light emitting device is housed in a recess of the embossed carrier, and the coating layer of the light emitting device faces an inner surface of the recess.
Fifteenth mode: In the light-emitting device, the top surface of the wavelength conversion member is further covered with the coating layer, and the coating layer faces the bottom surface of the recess. Embodiment package.
Sixteenth aspect: A device precursor having a plurality of light emitting elements arranged on a wavelength conversion material and a sealing material covering the plurality of light emitting elements, or a device having a wavelength conversion material covering the plurality of light emitting elements a step of cutting the precursor into individual pieces;
A step of providing a coating layer having a surface roughness smaller than the surface roughness of the cut surface on the cut surface obtained by the cutting;
A method of manufacturing a light emitting device, comprising:
Seventeenth aspect: the wavelength conversion material includes a resin material and phosphor particles,
The method for manufacturing a light-emitting device according to the sixteenth aspect, wherein the cut surface has a plurality of projections, and the projections include part of the phosphor particles.
Eighteenth mode: The method of manufacturing a light-emitting device according to the sixteenth or seventeenth mode, wherein the coating layer forms a smooth outer surface on the cut surface.
Nineteenth mode: The method of manufacturing a light-emitting device according to any one of the 116th to the 18th modes, wherein the surface roughness of the coating layer is Sa of 0.7 μm or less.

REFERENCE SIGNS LIST 10 light emitting element 11 light emitting surface/first surface 12 electrode forming surface/second surface 13 side surface/third surface 15 semiconductor laminate 16 electrode 17 conductive member 20 wavelength conversion member 20a surface forming an interface with the coating layer 21 upper surface 22 light emission Incidence surface facing the element 23 Side surface 25 Plural convex portions 26 Resin material 27 Phosphor particles 20' Wavelength conversion material 30 Coating layer 30a Outer surface 40 Sealing member (coating member)
43 side surface of sealing member 40' sealing material 50 sealing member (covering member)
REFERENCE SIGNS LIST 100 light emitting device 100' device precursor 200 embossed carrier 250 recess 250a inner side surface of recess 255 side surface of recess 257 bottom surface of recess 270 cover member 300 package 400 suction nozzle

Claims (9)

a light-emitting element having an upper surface serving as a light-emitting surface ;
a wavelength conversion member that includes a resin material and phosphor particles and is arranged to cover the light emitting surface of the light emitting element;
a sealing member arranged to cover the side surface of the light emitting element;
a coating layer covering at least part of the surface of the wavelength conversion member;
with
the at least part of the surface of the wavelength conversion member has a plurality of protrusions, the protrusions including a portion of the phosphor particles;
the surface roughness of the coating layer in the portion covering the wavelength conversion member is smaller than the surface roughness of the portion covered with the coating layer in the surface of the wavelength conversion member;
The coating layer has a thickness of 2 μm or more and 10 μm or less,
The coating layer covers the entire side surface of the wavelength conversion member, continuously covers from the side surface of the wavelength conversion member to the side surface of the sealing member, and continues to the upper surface of the wavelength conversion member. The light-emitting device according to claim 1, wherein the wavelength conversion member is covered up to a corner, and the coating layer covers the outer peripheral portion of the upper surface of the wavelength conversion member directly above the light-emitting element so that the upper surface is exposed. The light emitting device according to claim 1, wherein the side surface of the wavelength conversion member is a cut surface, and the coating layer covers the cut surface. 3. The light-emitting device according to claim 1, wherein said upper surface of said wavelength conversion member is a polished surface, and said coating layer covers said polished surface. 4. The coating layer of the portion covering the wavelength conversion member according to any one of claims 1 to 3, wherein the coating layer has lower tackiness than the portion of the surface of the wavelength conversion member covered with the coating layer. luminous device. 5. The light-emitting device according to claim 1, wherein said surface roughness of said coating layer is Sa of 0.7 μm or less. The light emitting device according to any one of claims 1 to 5, wherein the surface roughness of the side surface of the wavelength conversion member is Sa of 0.9 µm or more. The light emitting element is
A semiconductor laminate comprising a first surface corresponding to the light emitting surface of the light emitting element , a second surface opposite to the first surface, and a third surface between the first surface and the second surface. and,
a pair of positive and negative electrodes arranged on the second surface;
including
7. The light emitting device according to claim 1, wherein said wavelength conversion member covers said first surface of said semiconductor laminate. A package comprising the light emitting device according to any one of claims 1 to 7 and an embossed carrier,
A package, wherein the light emitting device is housed in a recess of the embossed carrier, and the coating layer of the light emitting device faces an inner surface of the recess. 9. The package according to claim 8, wherein said coating layer provided on said upper surface of said wavelength conversion member in said light emitting device faces the bottom surface of said recess.

Images