JP6702280B2 - Light emitting device, method for manufacturing covering member, and method for manufacturing light emitting device - Google Patents

Description

The present disclosure relates to a light emitting device, a method for manufacturing a covering member, and a method for manufacturing a light emitting device.

2. Description of the Related Art In recent years, light emitting diodes have been used in various forms in general lighting fields, in-vehicle lighting fields, etc. as their quality has improved. For example, there is known a light emitting device that is made thin by disposing a plate-shaped optical member having an outer frame on a light emitting element. (Patent Document 1)

JP2012-134355A

There is a demand for a light emitting device that is thinner than conventional light emitting devices. An embodiment of the present invention aims to provide a light emitting device that can be thinned, a method of manufacturing the same, and a method of manufacturing a covering member.

(1) A method for manufacturing a covering member according to an embodiment of the present invention is
A step of preparing a first light reflecting member having a through hole,
In the through hole, a step of disposing a translucent resin containing a wavelength conversion substance,
A step of unevenly distributing the wavelength conversion substance in the translucent resin on one opening side of the through hole;
After unevenly distributing the wavelength conversion substance, a step of removing a part of the translucent resin from the other opening side of the through hole,
including.
(2) A method for manufacturing a covering member according to another embodiment of the present invention is
A step of preparing a first light reflecting member having a recess, and
A step of disposing a translucent resin containing a wavelength conversion substance in the recess,
A step of unevenly distributing the wavelength conversion substance in the translucent resin on the bottom surface side of the recess;
After unevenly distributing the wavelength conversion material, a step of removing a part of the transparent resin from the opening side of the recess,
After unevenly distributing the wavelength conversion material, a part of the first light reflecting member is removed from the surface opposite to the surface on which the recess is formed, and the transparent resin is applied to the opposite surface. Exposing step,
including.
(3) The light emitting device according to the embodiment of the present invention is
A covering member having a first light reflecting member having a through hole and a translucent resin arranged in the through hole;
A light emitting element provided so as to face the translucent resin,
A second light reflecting member which covers a side surface of the light emitting element and is provided to face a first light reflecting member around the light emitting element,
The translucent resin includes a wavelength conversion substance that is unevenly distributed on the lower surface side facing the light emitting element or on the upper surface side away from the light emitting element.

According to an embodiment of the present invention, it is possible to provide a light emitting device that can be made thin.

FIG. 1A is a cross-sectional view showing the method of manufacturing the covering member in the method of manufacturing the light emitting device according to the first embodiment. 1B is a cross-sectional view taken along the line BB of FIG. 1A. FIG. 2A is a sectional view showing a state in which the first light reflecting member is held during punching in the method for manufacturing the covering member according to the first embodiment. FIG. 2B is a cross-sectional view showing a state when the upper die is driven in at the time of punching in the method for manufacturing the covering member according to the first embodiment. FIG. 2C is an enlarged view of a dotted line portion of FIG. 2B. FIG. 3A is a cross-sectional view when a translucent resin containing a wavelength conversion substance is arranged in the through hole of the first light reflecting member in the method for manufacturing the covering member according to the first embodiment. FIG. 3B is a cross-sectional view when the wavelength conversion substance is unevenly distributed in the through hole of the first light reflecting member in the method for manufacturing the covering member according to the first embodiment. FIG. 3C is a cross-sectional view when a part of the translucent resin and the first light reflecting member is removed in the method for manufacturing the covering member according to the first embodiment. FIG. 4A is a cross-sectional view when the light emitting element is fixed in the method for manufacturing the light emitting device according to the first embodiment. FIG. 4B is a cross-sectional view when the second light reflecting member is formed in the method for manufacturing the light emitting device according to the first embodiment. FIG. 4C is a cross-sectional view when the second light reflecting member is formed in the case where the bonding member is included in the method for manufacturing the light emitting device according to the first embodiment. FIG. 4D is a cross-sectional view when the second light reflecting member is formed so as to embed the electrode of the light emitting element in the method for manufacturing the light emitting device according to the first embodiment. FIG. 5A is a plan view showing a cutting line when dividing each light emitting device in the method for manufacturing a light emitting device according to the first embodiment. 5B is a cross-sectional view taken along the line CC of FIG. 5A. FIG. 6A is a plan view showing the light emitting device after being divided into individual pieces in the method for manufacturing the light emitting device according to the first embodiment. FIG. 6B is a cross-sectional view taken along the line DD of FIG. 6A. FIG. 6C is a cross-sectional view showing a modified example of individualizing the light emitting device manufacturing method according to the first embodiment. FIG. 7A is a cross-sectional view when a first light reflecting member having a recess is formed on a supporting member in the method for manufacturing a covering member according to the second embodiment. FIG. 7B is a cross-sectional view when a translucent resin containing a wavelength conversion substance is arranged in the recess in the method for manufacturing the covering member according to the second embodiment. FIG. 7C is a cross-sectional view when the wavelength conversion substance is unevenly distributed in the translucent resin in the recess in the method for manufacturing the covering member according to the second embodiment. FIG. 7D is a cross section when the support member of the first light reflecting member is peeled off and the support member is attached to the surface on the opposite side of the first light reflecting member in the method for manufacturing a covering member according to the second embodiment. It is a figure. FIG. 7E is a cross-sectional view when the first light reflecting member is removed so that the recess penetrates in the method for manufacturing the covering member according to the second embodiment. FIG. 8A is a plan view of the light emitting device according to the fourth embodiment. 8B is a cross-sectional view taken along the line AA of FIG. 8A. FIG. 9 is a sectional view of the light emitting device according to the fifth embodiment. FIG. 10 is a sectional view of the light emitting device according to the sixth embodiment. FIG. 11 is a sectional view of the light emitting device according to the seventh embodiment. FIG. 12 is a sectional view of the light emitting device according to the eighth embodiment. FIG. 13A is a cross-sectional view of a light emitting device according to the first modification of the eighth embodiment. FIG. 13B is a cross-sectional view of a light emitting device according to Modification 2 of Embodiment 8. FIG. 13C is a sectional view of a light emitting device according to Modification 3 of Embodiment 8. FIG. 14A is a cross-sectional view of the light emitting device according to the ninth embodiment. FIG. 14B is a sectional view of a light emitting device according to a modification of the ninth embodiment. FIG. 15A is a sectional view of a light emitting device according to the tenth embodiment. FIG. 15B is a sectional view of a light emitting device according to a modification of the tenth embodiment.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the following description, terms indicating a specific direction or position (for example, “upper”, “lower”, and other terms including those terms) are used as necessary. The use of those terms is for facilitating the understanding of the invention with reference to the drawings, and the technical scope of the present invention is not limited by the meanings of the terms. Further, the portions having the same reference numerals appearing in a plurality of drawings indicate the same portions or members.

Embodiment 1.
Next, a method of manufacturing the light emitting device according to the first embodiment will be described with reference to FIGS. 1A to 6C.

The method for manufacturing the light emitting device according to the first embodiment includes
(1) A first light reflecting member having a plurality of through holes, a translucent resin provided in the through hole so as to have substantially the same thickness as the first light reflecting member, and one of the through holes. A manufacturing process of a covering member having a wavelength conversion substance contained in a translucent resin so as to be unevenly distributed on the opening side,
(2) A step of fixing the light emitting element on each of the transparent resins provided in the through holes,
(3) a step of forming a second light reflecting member between the light emitting elements provided on the translucent resin,
(4) dividing the light emitting elements into individual light emitting devices by cutting the first light reflecting member and the second light reflecting member.
According to the method for manufacturing a light emitting device of the embodiment configured as described above, the wavelength conversion material is used with the covering member containing the translucent resin contained so as to be unevenly distributed on one opening side of the through hole. Since the light emitting device is manufactured, a thin light emitting device can be manufactured.
Hereinafter, the method for manufacturing the light emitting device of the present embodiment will be specifically described.

<Production of covering member>
A manufacturing process of the covering member 70 according to the embodiment will be described with reference to FIGS. 1A to 3C. The covering member 70 manufactured in this manufacturing process includes the first light reflecting member 10 and the translucent resin 30 containing the wavelength conversion substance 20.

Step 1-1. Preparation of First Light Reflecting Member Having Through Holes First light reflecting member 10 having through holes 106 is prepared. The through hole 106 penetrates the first surface 101 of the first light reflecting member 10 and the second surface 102 that is the back surface of the first surface (FIGS. 1A and 1B ). Note that only one through hole 106 may be formed in the first light reflecting member 10 or a plurality of through holes 106 may be formed.
When forming the through hole 106 in the first light reflecting member 10, any method known in the art may be used. For example, irradiation or drawing of laser light, punching, etching, blasting, etc. may be mentioned. It is preferable that a convex portion is formed on the side wall of the through hole 106, and the convex portion can increase the adhesive force between the translucent resin 30 and the first light reflecting member 10, as described later. .. When resin or metal is used for the first light reflecting member 10, the through hole 106 is formed by punching, so that the convex portion 103 can be easily formed on the side wall of the through hole 106. That is, at the time of punching, as shown in FIG. 2A, the first light reflecting member 10 is held by sandwiching the upper and lower sides with the presser 91 and the lower die 92. In such a held state, the upper die 90 is driven downward to form the through hole 106 in the first light reflecting member 10. At this time, by controlling the distance of the gap d between the upper die 90 and the lower die 92, the convex portion 103 can be formed at a predetermined position. The gap d between the upper die 90 and the lower die 92 indicates the distance between the upper die 90 and the lower die 92 in the x direction (horizontal direction) in FIG. 2A. For example, when the through hole 106 is formed from the upper side to the lower side, by adjusting the gap d, it is possible to form the convex portion 103 that is a downwardly protruding (inclined) protruding portion (FIGS. 2B and 2C ). ). In other words, the convex portion 103 may be inclined downward. This is because the force applied from the upper mold 90 and the force applied from the lower mold 92 to the first light reflecting member 10 are separated by the gap d between the upper mold 90 and the lower mold 92. Further, by adjusting the distance of the gap d, it is possible to form a through hole having a plurality of convex portions 103 in the side wall. The distance of the gap d between the upper mold 90 and the lower mold 92 is not particularly limited, but is preferably 1 to 30 μm in order to form an inclined convex portion, and is required to form a plurality of convex portions. It is preferably 0 to 30 μm (not including 0). Further, the distance of the gap d between the upper mold 90 and the lower mold 92 with respect to the thickness of the first light reflecting member 10 is preferably 1 to 30% in order to form an inclined convex portion, In order to form a plurality of protrusions, it is preferably 0 to 30% (not including 0).

The first light reflecting member 10 having the through hole 106 may be formed by compression molding using a mold, transfer molding, or injection molding. By forming in this way, it is possible to prevent variations in the shape of the first light reflecting member 10 having the through holes 106.

After the first light reflecting member 10 having the through holes 106 is prepared, the first light reflecting member 10 having the through holes 106 is placed on the support member 80 made of a heat resistant sheet or the like.

Step 1-2. Arrangement of Translucent Resin 30 Containing Wavelength Converting Material 20 Next, the translucent resin 30 containing the wavelength converting material 20 is arranged in each through hole 106 (FIG. 3A). When disposing the translucent resin 30 containing the wavelength conversion substance 20, any method known in the art may be used. Examples include printing and potting. The transparent resin 30 may be in any state as long as the wavelength conversion substance 20 can move in the transparent resin 30. That is, the translucent resin 30 may be in a liquid state before curing or in a semi-cured state. However, it is preferable that the translucent resin 30 is in a liquid state because the wavelength conversion substance 20 is easily moved. Further, the translucent resin 30 may contain a light diffusing material.

Step 1-3. Uneven distribution of the wavelength conversion material 20 The wavelength conversion material 20 in the translucent resin 30 is unevenly distributed on the first surface 101 side by natural sedimentation or forced sedimentation (FIG. 3B). The forced sedimentation includes centrifugal sedimentation in which the wavelength conversion substance 20 is sedimented by a centrifugal force generated by rotation, for example. After the wavelength conversion substance 20 is allowed to settle, the translucent resin 30 is cured by heating or the like. Thereby, the transparent resin 30 in which the wavelength conversion substance 20 is unevenly distributed on the first surface 101 side is obtained. When the light transmissive resin 30 contains a light diffusing material, the light diffusing material may be unevenly distributed in the same manner as the wavelength conversion substance 20, but is dispersed in the light transmissive resin 30 without uneven distribution. It is preferably arranged.

Step 1-4. Removal of First Light Reflecting Member and Translucent Resin The portion above the Ct-Ct line (broken line) in FIG. 3B is removed. That is, the “first light reflecting member 10 on the second surface side” and the “transparent resin 30 on the side opposite to the side where the wavelength conversion material 20 is unevenly distributed” are removed (FIG. 3C). When removing the first light reflecting member 10 and the transparent resin 30, a method known in the art can be used. For example, etching, cutting, grinding, polishing, blasting, etc. may be mentioned. Thereby, the transparent resin 30 can be thinned without substantially changing the content of the wavelength conversion substance 20. That is, the thinned covering member 70 can be obtained. Further, when removing the first light reflecting member and the transparent resin by etching, cutting, grinding, polishing, blasting or the like, the “first light reflecting member 10 on the second surface side” and the “wavelength conversion material 20” are removed. The translucent resin 30″ on the side opposite to the unevenly distributed side may be roughened. The rough surface reduces the tackiness (adhesiveness) and, for example, facilitates handling during mounting.
Here, in the present specification, the surface on the side where the wavelength conversion substance 20 is unevenly distributed in the first light reflecting member 10 is referred to as a first surface regardless of before and after the removal of the translucent resin 30 and the like. The opposite surface is called the second surface.
Through the above steps, the covering member 70 held by the supporting member 80 can be obtained.

<Production of light emitting device>
Process A-1. Fixing Light-Emitting Element 40 The light-emitting element is fixed on the transparent resin 30 of the covering member 70 manufactured by the method described above (FIG. 4A). For example, the translucent resin 30 and the light extraction surface 401 of the light emitting element 40 are bonded via the joining member 60 (FIG. 4C). By using the joining member 60, the light-transmissive resin 30 can be bonded to the light emitting element 40 even if it does not have adhesiveness. Further, since the bonding member 60 is formed up to the side surface of the light emitting element 40, the adhesive force between the light emitting element 40 and the transparent resin 30 is improved, which is preferable. The surface of the translucent resin 30 on which the wavelength conversion material 20 is unevenly distributed may be adhered to the light extraction surface 401 of the light emitting element 40, or the wavelength conversion material 20 of the translucent resin 30 may be bonded. The surface opposite to the unevenly distributed surface and the light extraction surface 401 of the light emitting element may be bonded.

Step A-2. Formation of Second Light Reflecting Member A second light reflecting member 50 that covers a part of the side surface of the light emitting element 40 and the first light reflecting member 10 is formed (FIG. 4B). The second light reflecting member 50 is joined to the first light reflecting member 10 around the light emitting element 40. When the light emitting element 40 and the translucent resin 30 are bonded together using the joining member 60, the second light reflecting member 50 may cover the joining member 60 (FIG. 4C). Further, a portion of the electrode formation surface 402 of the light emitting element 40 which is not covered with the electrodes 43 and 44 may be covered with the second light reflecting member 50. At this time, the thickness (dimension in the z direction) of the second light reflecting member 50 may be adjusted so that the electrodes 43 and 44 are partially exposed from the second light reflecting member 50. That is, when the first surface 101 of the first light reflecting member 10 is used as a reference, the height of the second light reflecting member 50 to the surface 52 opposite to the surface facing the first light reflecting member 10 is: The height may be less than or equal to the height of the exposed surfaces 431 and 441 of the electrodes 43 and 44.

Moreover, you may form the 2nd light reflection member 50 of the thickness which embeds the electrodes 43 and 44 (FIG. 4D). After that, the upper side of the Ct-Ct line (broken line) in FIG. 4D is removed. That is, the second light reflecting member 50 may be removed and the electrodes 43 and 44 may be exposed. When removing the second light reflecting member 50, any method known in the art may be used. For example, etching, cutting, grinding, polishing, blasting, etc. may be mentioned. By removing the second light reflecting member 50 by etching, cutting, grinding, polishing, blasting or the like, the surface 52 of the second light reflecting member 50 opposite to the surface facing the first light reflecting member 10 is made flat. It is preferable because it is possible.

Step A-3. Dividing the light emitting device into individual light emitting devices is divided into individual light emitting devices by cutting the first light reflecting member and the second light reflecting member between the light emitting elements. Specifically, along the broken line X ₁ , the broken line X ₂ , the broken line X ₃ and the broken line X ₄ (FIGS. 5A and 5B) passing through the middles of the adjacent light emitting elements 40, the first light reflecting member 10 and the second light reflecting member 10 The light reflection member 50 and the support member 80 are cut into individual pieces by, for example, a dicer. Finally, the support member 80 is removed (peeled) to obtain a light emitting device (FIGS. 6A and 6B). Further, it is preferable that the support member 80 is not completely cut when the first light reflection member 10, the second light reflection member 50, and the support member 80 are cut. That is, as shown in FIG. 6C, it is preferable that the cutting portion 108 separates the first light reflecting member 10 and the second light reflecting member 50, and the supporting member 80 is not separated. By doing so, the support member 80 is not divided into a plurality of parts, so that the support member 80 can be removed (peeled) at once. The support member 80 may be removed before cutting, and then the first light reflecting member 10 and the second light reflecting member 50 may be cut. Thereby, a plurality of light emitting devices including one light emitting element 40 can be simultaneously manufactured. Moreover, you may cut|disconnect at the position containing several light emitting element 40.

In the above-described first embodiment, through the steps 1-4, the first light reflecting member and/or the translucent resin 30 is removed to use the thinned covering member 70, and the steps A-1 to A-3 are performed. I am trying to carry out.
However, in the method for manufacturing the light emitting device of the first embodiment, after performing steps A-1 and A-2 after step 1-3, the first light reflecting member and/or the translucent resin 30 is removed. The covering member 70 may be thinned. Further, in the method for manufacturing a light emitting device of Embodiment 1, after performing steps A-1 to A-3 after step 1-3, the first light reflecting member and/or the translucent property is provided in each light emitting device. The resin 30 may be removed to thin the covering member 70.

Embodiment 2.
Hereinafter, a method for manufacturing the light emitting device according to the second embodiment will be described.
The manufacturing method of the light emitting device of the second embodiment is the same as the manufacturing method of the light emitting device of the first embodiment except that the covering member is manufactured by a method different from the manufacturing method of the covering member of the first embodiment.
Hereinafter, a method for manufacturing the covering member according to the embodiment will be described.

<Production of covering member>
Step 2-1. Preparation of First Light Reflecting Member The first light reflecting member 10 having the recess 107 is formed on the support member 80 made of a heat resistant sheet or the like. When the surface of the first light reflecting member 10 facing the support member 80 is the first surface 101 and the surface opposite to the first surface is the second surface 102, the recess 107 is on the second surface 102 side. Is formed by opening (FIG. 7A).

Step 2-2. Arrangement of Translucent Resin 30 Containing Wavelength Converting Material 20 Next, the translucent resin 30 containing the wavelength converting material 20 is arranged in each recess 107 (FIG. 7A). When disposing the translucent resin 30 containing the wavelength conversion substance 20, any method known in the art may be used. Examples include printing and potting. The transparent resin 30 may be in any state as long as the wavelength conversion substance 20 can move in the transparent resin 30. That is, the translucent resin 30 may be in a liquid state before curing or in a semi-cured state. However, it is preferable that the translucent resin 30 is in a liquid state because the wavelength conversion substance 20 is easily moved.

Step 2-3. Uneven distribution of the wavelength conversion material 20 The wavelength conversion material 20 in the translucent resin 30 is unevenly distributed on the first surface 101 side (bottom surface side of the recess) by natural sedimentation or forced sedimentation (FIG. 7C). Then, the translucent resin 30 is cured by heating or the like. Thereby, the translucent resin in which the wavelength conversion substance 20 is unevenly distributed on the first surface 101 side is obtained.

Step 2-4. Removal of First Light Reflecting Member and Translucent Resin The portion above the Ct1-Ct1 line (broken line) in FIG. 7C is removed. That is, the “first light reflecting member on the second surface side” and the “transparent resin 30 on the side opposite to the side where the wavelength conversion material 20 is unevenly distributed” are removed. When removing the first light reflecting member 10 and the translucent resin 30, any method known in the art may be used. Etching, cutting, grinding, polishing, blasting and the like can be mentioned. Accordingly, it is possible to make the wavelength conversion substance 20 thin while having the light-transmissive resin 30 on the side where the wavelength conversion substance 20 is unevenly distributed. Further, when removing the first light reflecting member and the transparent resin by etching, cutting, grinding, polishing, blasting or the like, the “first light reflecting member 10 on the second surface side” and the “wavelength conversion material 20” are removed. The translucent resin 30″ on the side opposite to the unevenly distributed side may be roughened. A rough surface reduces tackiness and makes handling easier.

Step 2-5. Removal of First Light Reflecting Member The support member 80 is peeled off from the first surface of the first light reflecting member 10 to form a second surface (a surface opposite to the first surface) of the first light reflecting member 10. The support member 80 is attached (FIG. 7D). At this time, another support member 80 may be attached to the second surface of the first light reflecting member 10 and then the support member 80 may be peeled off from the first surface. Next, the “first light reflecting member on the first surface side” above the Ct2-Ct2 line (broken line) in FIG. 7D is removed (FIG. 7E). When removing the first light reflecting member 10, any method known in the art may be used. Etching, cutting, grinding, polishing, blasting and the like can be mentioned. Thereby, the translucent resin 30 containing the wavelength conversion substance 20 is exposed from the first surface 101 side. That is, the thinned covering member 70 can be obtained. Either of steps 2-4 and 2-5 may be performed first.

Embodiment 3.
The manufacturing method of the light emitting device of the third embodiment is different from the manufacturing method of the first embodiment in the following points.
(1) In the first embodiment, the transparent resin 30 is cured in the step 1-3, whereas in the method for manufacturing the light emitting device of the third embodiment, the transparent resin 30 is processed in the step 1-3. Is set in a semi-cured state, and the translucent resin 30 maintains the adhesive property until the light emitting element 40 is fixed.
(2) In the first embodiment, the light emitting element 40 and the translucent resin 30 are bonded by the adhesive member in the step A-1, whereas in the method for manufacturing the light emitting device of the third embodiment, the step A- 1, the light emitting element 40 and the translucent resin 30 are fixed by utilizing the adhesiveness of the translucent resin 30 in the semi-cured state.
The manufacturing method of the light emitting device of the third embodiment is configured in the same manner as the manufacturing method of the first embodiment except for the above (1) and (2).

In the manufacturing method of the light emitting device of the third embodiment, in the manufacturing method of the first embodiment, the light emitting element 40 and the translucent resin 30 are fixed by utilizing the adhesiveness of the semi-cured translucent resin 30. ..
However, in the manufacturing method of the second embodiment, the light emitting element 40 and the translucent resin 30 may be fixed by utilizing the adhesiveness of the translucent resin 30 in the semi-cured state.

In addition, in the method for manufacturing a light-emitting device of Embodiment 3 described above, after performing Steps A-1 to A-2 after Step 1-3, the first light reflecting member and/or the translucent resin 30 is added. It is preferable that the covering member 70 is thinned by removing it.

According to the method for manufacturing a light emitting device of Embodiments 1 to 3 described above, since the covering member 70 can be thinned by grinding, polishing, etc., it is possible to easily manufacture a thin light emitting device.

In addition, in the method for manufacturing a light-emitting device according to Embodiments 1 to 3 described above, after the wavelength conversion substance 20 is unevenly distributed on one surface side of the transparent resin 30, the wavelength conversion substance 20 is unevenly distributed in the transparent resin 30. The covering member 70 is thinned by removing the non-coated region. As a result, it is possible to form a thin coating member 70 with a small variation in the content of the wavelength conversion substance 20, and it is possible to reduce the variation in color tone of the light emitting device.
That is, if the thin wavelength-converting material 20 is unevenly distributed and a thin covering member containing the wavelength-converting material is produced without removing the region in which the wavelength-converting material 20 is not unevenly distributed, a through hole of the thin first light-reflecting member is formed. Alternatively, a small amount of translucent resin is applied to the opening to manufacture.
However, when the coating amount of the resin is small, the dispersion of the coating amount tends to be large, and as a result, the dispersion of the wavelength conversion substance contained in the translucent resin also becomes large. After the wavelength conversion substance 20 is unevenly distributed on one surface side of the translucent resin 30, the region where the wavelength conversion substance 20 is not unevenly distributed in the translucent resin 30 is removed to reduce the thickness of the covering member 70. As a result of being able to relatively increase the amount of the translucent resin applied to the through hole or opening of the single light reflecting member, it is possible to form the thin covering member 70 in which the variation in the content of the wavelength conversion substance 20 is small. ..

In addition, in the method for manufacturing a light-emitting device according to Embodiments 1 to 3 described above, after the wavelength conversion substance 20 is unevenly distributed on one surface side of the transparent resin 30, the wavelength conversion substance 20 is unevenly distributed in the transparent resin 30. The covering member 70 is thinned by removing the non-coated region. As a result, it is possible to form the thin covering member 70 with good processing accuracy.
That is, when a thin first light reflecting member having a through hole or opening is used to fill the through hole or opening with the light-transmissive resin 30 to make a thin covering member, in the manufacturing process, for example, Deformation of the thin first light-reflecting member in a state where the transparent resin 30 is not filled in the through hole or opening, and the thin first light when the transparent resin 30 is filled in the through hole or opening and cured It is difficult to manufacture the covering member with high processing accuracy due to deformation of the reflecting member.
However, in the method for manufacturing a light emitting device according to Embodiments 1 to 3 described above, the through hole or the opening is filled with the transparent resin 30 by using the relatively thick first light reflecting member that is easy to handle in the manufacturing process. Further, since the covering member having high strength after being hardened is thinned by polishing or grinding, the light emitting device can be manufactured by manufacturing the thin covering member with high processing accuracy.
Therefore, according to the method for manufacturing a light emitting device of Embodiments 1 to 3, the light emitting device can be manufactured with high processing accuracy.

Furthermore, in the method for manufacturing a light emitting device according to Embodiments 1 to 3 described above, as described above, the light emitting device is manufactured by manufacturing the thin covering member with high processing accuracy. As a result, it is possible to manufacture a light emitting device with less variation in light distribution characteristics.
That is, a thin first light reflecting member having a through hole or an opening is used, and the through hole or the opening is filled with a translucent resin, so that a thin covering member can be formed without thinning by polishing or grinding. If it is attempted to be manufactured, there is a concern that the shape of the translucent resin after curing tends to become large and the dispersion of the light distribution characteristics may become large.
For example, when a translucent resin is applied to the through hole or the opening of the first light reflecting member by potting or the like and cured, a phenomenon called so-called shrinkage may occur and the surface may have a concave shape. When the surface has a concave shape as described above, the light extraction efficiency of the light emitting device is deteriorated. When the surface shape (for example, the amount of depression in the concave shape) varies due to the variation in the amount of shrinkage, the light distribution characteristics also vary.
However, in the method for manufacturing a light emitting device according to Embodiments 1 to 3 described above, since the region where the wavelength conversion substance 20 is not unevenly distributed in the translucent resin 30 is removed to reduce the thickness of the covering member 70, the covering member 70 is formed by shrinking. The recessed portion of the surface thus formed can be removed to make the surface flat, and variations in the surface shape can be reduced.
Therefore, it becomes possible to manufacture a light emitting device with high light extraction efficiency and small variation in light distribution characteristics.

<Embodiment 4>
The light emitting device 1000 according to the fourth embodiment is an example of the light emitting device manufactured by the method for manufacturing the light emitting device according to the first to third embodiments. The light emitting device 1000 according to the fourth embodiment includes a first light reflecting member 10 having a through hole, and a translucent resin 30 containing the wavelength conversion substance 20 arranged in the through hole of the first light reflecting member 10. A light-emitting element 40 arranged to face the translucent resin 30, a side surface of the light-emitting element 40, and a first light-reflecting member around the light-emitting element 40 facing the first light-reflecting member. And two light reflecting members 50. The wavelength conversion substance 20 is unevenly distributed in the translucent resin 30 on the side facing the light emitting element 40. That is, the surface of the translucent resin 30 on which the wavelength conversion material 20 is unevenly distributed faces the light extraction surface 401 of the light emitting element 40. The light extraction surface 401 of the light emitting element 40 is a surface opposite to the surface of the light emitting element 40 facing the base when the light emitting element 40 is mounted on the base. In other words, when the light emitting element 40 is mounted face down, the surface opposite to the surface having the electrode of the light emitting element 40 is shown. Further, when the light emitting element 40 is mounted face up, the surface having the electrodes of the light emitting element 40 is shown. In addition, the surface having the electrode is the electrode formation surface.

8B is a cross-sectional view taken along the line AA of FIG. 8A. As shown in FIG. 8B, the light emitting element 40 includes a transparent substrate 41 and a semiconductor laminated body 42 formed on the lower surface side of the transparent substrate 41. The light emitting element 40 has a light extraction surface 401 (upper surface) on the transparent substrate 41 side and an electrode formation surface 402 (lower surface) opposite to the light extraction surface, and the electrode formation surface 402 (lower surface). And a pair of electrodes 43 and 44. Each of the two electrodes 43 and 44 forming the pair of electrodes can have any shape. In the present specification, the “electrode formation surface” of the light emitting element 40 refers to the surface of the light emitting element 40 in a state where the electrodes 43 and 44 are not included. In the present embodiment, the electrode formation surface 402 coincides with the lower surface of the semiconductor stacked body 42.

Further, the shape of the through hole formed in the first light reflecting member 10 is a shape including a curved line such as a circle, an ellipse, a semicircle, and a semi-ellipse, a polygon such as a triangle or a quadrangle, and irregularities such as T and L. Any shape such as a geometrical shape may be used. Further, the size of the translucent resin 30 arranged in the through hole is preferably larger than the outer edge of the light emitting element 40 in order to improve the light extraction efficiency from the light emitting element 40. This is because the translucent resin 30 is larger than the outer edge of the light emitting element 40, so that the amount of light reflected by the first light reflecting member 10 and returning to the light emitting element 40 can be reduced. Further, in order to improve the parting property of the light emitting device, it is preferable that the light transmitting resin 30 is smaller than the outer edge of the light emitting element 40. This is because the light transmissive resin 30 is smaller than the outer edge of the light emitting element 40, so that the area from which light is extracted becomes smaller.

The second light reflecting member 50 covers the side surface of the light emitting element 40 and the first light reflecting member 10. The second light reflecting member 50 may cover the electrode formation surface 402 of the light emitting element 40 so that the electrodes 43 and 44 are partially exposed.

In the light emitting device 1000, the wavelength conversion substance 20 is unevenly distributed on the first surface 101 side in the translucent resin 30. Therefore, even if the side where the wavelength conversion material 20 of the first light reflecting member 10 and the transparent resin 30 is not unevenly distributed (the side of the second surface 102) is removed, the wavelength contained in the transparent resin 30. A decrease in the content of the conversion substance 20 can be suppressed. That is, the light emitting device is thinned without largely changing the amount of the wavelength conversion substance 20 contained in the translucent resin 30. Further, even if the thickness of the translucent resin 30 varies to some extent, the amount of the wavelength conversion substance 20 contained in the translucent resin 30 does not change significantly. Further, the surface (upper surface) of the translucent resin 30 on the side where the wavelength conversion substance 20 is not unevenly distributed (the second surface 102 side) and the second surface 102 which is the upper surface of the first light reflecting member 10 are substantially. Are preferably on the same plane (flush), and both surfaces are flat with no step. By doing so, the light emitting device can be further thinned. It should be noted that the term "no flush or stepped" here means that one of them is not positively processed to project from the other, and even if there is unevenness of about 50 μm, preferably about 30 μm. There is one or no step.

In the light emitting device 1000, the surface of the translucent resin 30 on which the wavelength conversion material 20 is unevenly distributed and the light extraction surface 401 of the light emitting element 40 face (oppose) each other. That is, the surface of the translucent resin 30 exposed to the outside air, which constitutes a part of the upper surface of the light emitting device 1000, is the surface of the translucent resin 30 on which the wavelength conversion substance 20 is not unevenly distributed. Therefore, the wavelength conversion substance 20 does not substantially exist near the surface of the translucent resin 30 exposed to the outside air. Thereby, for example, even if the wavelength conversion substance 20 that is weak against moisture is used, the light-transmissive resin 30 functions as a protective layer, so that the wavelength conversion substance 20 is prevented from being deteriorated and a good color is obtained. You can keep the degree. For example, as the wavelength conversion substance 20 that is weak against moisture, there are a fluoride-based phosphor, a sulfide-based phosphor, a chloride-based phosphor, a silicate-based phosphor, a phosphate-based phosphor, and the like. In particular, K ₂ SiF ₆ :Mn, which is a fluoride-based phosphor, is a phosphor suitable as a red phosphor, but its application range is limited because it is weak against moisture. However, even if the light emitting device of Embodiment 4 contains K ₂ SiF ₆ :Mn, which is a fluoride-based phosphor, it is possible to suppress a change in chromaticity due to use. Further, the light emitted from the light emitting element 40 is refracted and scattered when it hits the wavelength conversion substance 20. Since the upper surface of the light emitting device 1000 is formed by the surface of the light transmissive resin 30 in which the wavelength conversion material 20 is not unevenly distributed, the light conversion device in which the wavelength conversion material 20 is dispersed and arranged in the light transmissive resin 30. Compared with, the place where scattering mainly occurs is on the lower side of the light emitting device. Therefore, if the upper surface of the light emitting device is formed by the surface of the translucent resin 30 on which the wavelength conversion material 20 is not unevenly distributed, the parting property is improved.

<Embodiment 5>
As shown in FIG. 9, the light emitting device 2000 according to the fifth embodiment is different from the light emitting device 1000 according to the fourth embodiment in that a surface of the translucent resin 30 on the side where the wavelength conversion material 20 is unevenly distributed. Is different in that the surface on the opposite side and the light extraction surface 401 of the light emitting element 40 are arranged to face each other. The other points are similar to those of the first embodiment.

In addition, the first light reflecting member 10 and the transparent resin 30 forming the side where the wavelength conversion material 20 is not unevenly distributed (the side of the second surface 102) are flush with each other, that is, there is no step on both surfaces and they are flat. Preferably. By doing so, the light emitting device can be further thinned. It is to be noted that, as in the case of the first embodiment, the absence of the flush surface and the level difference means that one of them is not actively processed so as to project from the other, and the thickness is about 50 μm, preferably about 30 μm. Unevenness may be included.

In the fifth embodiment, the translucent resin 30 in which the wavelength conversion material 20 is not unevenly distributed is arranged between the side where the wavelength conversion material 20 is unevenly distributed and the light emitting element 40. By doing so, the distance between the light emitting device 40 and the wavelength conversion substance 20 can be made larger than that in the case where the wavelength conversion substance 20 is dispersed and arranged in the translucent resin 30. Thereby, for example, even if the wavelength conversion material 20 which is weak to heat or the wavelength conversion material 20 whose excitation efficiency changes greatly with temperature is used, it is possible to suppress the heat generated from the light emitting element 40 from being transmitted to the wavelength conversion material 20. Therefore, good chromaticity can be maintained. Examples of the wavelength conversion substance 20 that is weak against heat or the wavelength conversion substance 20 that has a large change in excitation efficiency due to temperature include a quantum dot phosphor, a chlorosilicate phosphor, a β-sialon phosphor, and the like.

<Sixth Embodiment>
The light emitting device 3000 according to the sixth embodiment shown in FIG. 10 is different from the light emitting device 1000 according to the fourth embodiment in that the upper surface of the light emitting device 3000 is rougher than the lower surface of the light emitting device 3000. Be different. In other words, the lower surface of the light emitting device 3000 is flatter than the upper surface of the light emitting device 3000. The other points are the same as in the fourth embodiment.

The upper surface of the light emitting device 3000 includes a second surface of the first light reflecting member 10 and a surface opposite to the surface of the translucent resin 30 on which the wavelength conversion substance is unevenly distributed. The lower surface of the light emitting device 3000 is a surface 52 of the second light reflecting member 50 opposite to the surface facing the first light reflecting member 10, and one surface of the electrode of the light emitting element exposed from the second light reflecting member. And exposed surfaces 431 and 441. The second surface 102 of the first light reflecting member 10 that constitutes the upper surface of the light emitting device 3000 is preferably roughened than the exposed surfaces 431 and 441. Alternatively, the surface of the translucent resin 30 forming the upper surface of the light emitting device 3000 opposite to the surface on which the wavelength conversion material is unevenly distributed is preferably roughened from the exposed surfaces 431 and 441.

By roughening the upper surface of the light emitting device 3000, the tackiness is reduced, and for example, when the light emitting device 3000 is mounted, it becomes easy to handle. In addition, it is preferable that exposed surfaces 431 and 441, which are the one surface of the electrodes of the light emitting element exposed from the second light reflecting member, which form the lower surface of the light emitting device 3000, are flat. Further, it is preferable that the exposed surfaces 431 and 441 have higher specular reflectance than the lower surface of the second light reflecting member (the surface around the exposed surfaces 431 and 441). As a result, the contrast difference with the second light reflecting member 50 increases. Since the contrast difference between the exposed surfaces 431 and 441 and the surfaces around the exposed surfaces 431 and 441 becomes large, the electrodes 43 and 44 can be easily recognized. The arithmetic mean roughness Ra of the second surface 102 and the surface of the translucent resin 30 opposite to the surface on which the wavelength conversion substance is unevenly distributed is not particularly limited, but is easy to handle. Of the second surface preferably has an arithmetic average roughness Ra of 0.05 to 10 μm, more preferably 0.07 to 5 μm. The arithmetic mean roughness Ra of the surface of the translucent resin 30 opposite to the side on which the wavelength conversion substance 20 is unevenly distributed is not particularly limited, but is 0.05 to 10 μm for easy handling. It is more preferably 0.07 to 5 μm. The arithmetic average roughness Ra of the exposed surfaces 431 and 441 is not particularly limited, but the arithmetic average roughness Ra is preferably 0.1 μm or less, and 0.05 μm or less for easy recognition. More preferably, it is even more preferably 0.025 μm or less.

Ra can be measured according to the measuring method of JIS0601-1976 surface roughness. Specifically, Ra is obtained by extracting a portion of the measurement length L from the roughness curve in the direction of the center line, the center line of the extracted portion as the X axis, and the vertical magnification direction as the Y axis. It is expressed by the following equation when y=f(x).

The value of Ra is expressed in micrometers. This Ra can be measured using a contact-type surface roughness measuring device or a laser microscope. In this specification, the value of arithmetic average roughness: Ra is a value measured using SURFCOM480A-12 manufactured by Tokyo Seimitsu.

In addition, the first surface 101 of the first light reflecting member 10 which is the upper surface of the light emitting device 2000 and the surface of the translucent resin 30 on the side where the wavelength conversion material 20 is unevenly distributed form the lower surface of the light emitting device 2000. It is preferable that the exposed surfaces 431 and 441 to be formed are rough surfaces. By doing so, it becomes easy to handle like the light emitting device 3000.

<Embodiment 7>
The light emitting device 4000 according to the seventh embodiment shown in FIG. 11 is different from the light emitting device 1000 according to the fourth embodiment in that the light emitting element 40 and the translucent resin 30 are bonded via the bonding member 60. It makes a difference. The other points are the same as in the fourth embodiment.

It is preferable to dispose the translucent joining member 60 between the light emitting element 40 and the translucent resin 30 because the light emitting element 40 and the translucent resin 30 can be easily joined. Further, through the joining member 60, refraction or reflection occurs at the interface between the joining member 60 and the translucent resin 30. As a result, color unevenness and brightness unevenness can be suppressed. By increasing the refractive index of the bonding member 60 to be closer to the refractive index of the light extraction surface 401 of the light emitting element 40 than the refractive index of the translucent resin 30, the efficiency of extracting light from the light emitting element 40 is improved. It is possible to do so, which is preferable.

Further, when the joining member 60 is formed up to the side surface of the light emitting element 40, the light emitted from the side surface of the light emitting element 40 can be extracted from the light emitting device 4000 through the joining member 60, so that the light extraction efficiency can be improved. it can.

When the translucent resin 30 is larger than the outer edge of the light emitting element 40, the joining member 60 is preferably joined to the translucent resin 30 in an area larger than the area of the light extraction surface 401 of the light emitting element 40. .. As a result, the light emitted from the light emitting element 40 is introduced in the area where the bonding member 60 and the translucent resin 30 are bonded to each other, which is larger than the light extraction surface 401. Can be suppressed. Further, it is more preferable that the bonding member 60 covers the entire surface of the translucent resin 30 facing the light emitting element 40. By doing so, the light emitted from the light emitting element 40 can be introduced into all of the surfaces of the translucent resin 30 facing the light emitting element 40, so that color unevenness and brightness unevenness can be further suppressed.

In addition, as in the light emitting device 2000 according to the fifth embodiment, the surface of the translucent resin 30 opposite to the surface on which the wavelength conversion material 20 is unevenly distributed and the light extraction surface 401 of the light emitting element 40 are formed. Even if they are arranged facing each other, the above effects can be obtained.

<Embodiment 8>
The light emitting device 5000 according to the eighth embodiment shown in FIGS. 12, 13A, 13B, and 13C is different from the light emitting device 1000 according to the fourth embodiment in that a protrusion is formed on the sidewall of the through hole of the first light reflecting member 10. The difference is that it has 103. The other points are the same as in the fourth embodiment.

By providing the convex portion 103 on the side wall of the through hole, the light emitted from the light emitting element 40 is reflected by the convex portion 103, and more light impinges on the wavelength conversion material 20, which improves color unevenness, which is preferable. Although the position of the convex portion 103 is not particularly limited, when the upper surface of the light emitting device is formed by the second surface 102 of the first light reflecting member 10 as in the light emitting device 5000 shown in FIG. Is preferably formed at a position closer to the second surface 102 than the first surface 101 of the first light reflecting member 10. By doing so, the light reflected from the convex portion 103 is more likely to hit the wavelength conversion material 20, and thus color unevenness is improved. Further, it is preferable that the convex portion 103 is formed at a position closer to the upper surface of the light emitting device than the light extraction surface of the light emitting element. This improves the parting property of the light emitting device. Since the amount of the light-transmissive resin 30 can be increased by increasing the parting property by using the convex portion 103, it is possible to suppress color unevenness. In the present specification, the position of the convex portion 103 is the position of the tip of the convex portion 103.

By having the convex portion 103 on the side wall of the through hole, the adhesion area between the first light reflection member 10 and the translucent resin 30 containing the wavelength conversion substance 20 is increased, and the adhesion is also increased, which is preferable. Further, as shown in FIG. 13A, the convex portion 103 may be inclined and projected toward the first surface 101 side. In other words, the convex portion 103 may be inclined toward the first surface 101 side. Since the convex portion 103 is inclined, the adhesive area is increased and the adhesive force can be increased. In addition, as shown in FIG. 13B, the convex portion 103 may be inclined and projected toward the second surface 102 side. In other words, the convex portion 103 may be inclined toward the second surface 102 side. Also by doing so, the adhesion area between the first light reflecting member 10 and the translucent resin 30 is increased, and the adhesive force can be increased. Further, since the light emitted from the light emitting element 40 is reflected by the convex portion 103, it becomes easier to go to the upper surface of the light emitting device, so that the light can be taken out better. Further, as shown in FIG. 13C, the light emitting element 40 and the translucent resin 30 may be joined via the joining member 60. By doing so, refraction or reflection occurs at the interface between the joining member 60 and the translucent resin 30, and reflection also occurs at the convex portions 103, so that color unevenness is further improved.

<Embodiment 9>
The light emitting device 6000 according to the embodiment shown in FIG. 14 is different from the light emitting device 1000 according to the fourth embodiment in that the translucent resin 30 contains a light diffusing material. In FIG. 14A, the transparent resin 30 contains the first light diffusing material 31, and in FIG. 14B, the transparent resin 30 contains the first light diffusing material 31 and the second light diffusing material 32. The other points are the same as in the fourth embodiment.

It is preferable to include the first light diffusing material 31 in the transparent resin 30 as shown in FIG. 14A because the refractive index of the transparent resin 30 can be adjusted. Further, the refractive index of the first light diffusing material at 25° C. (normal temperature) is preferably higher than the refractive index of the translucent resin at 25° C. (normal temperature). As a result, the difference in refractive index between the translucent resin 30 and the first light diffusing material 31 becomes larger at high temperature (100° C.) than at room temperature (25° C.). This is because when the temperature rises due to driving or the like, the refractive index of the transparent resin 30 decreases due to thermal expansion. In general, the refractive index of the first light diffusing material 31 does not decrease as compared with the translucent resin 30 even when the temperature rises. Further, the wavelength conversion efficiency of the wavelength conversion material 20 decreases as the temperature rises. At a high temperature (100° C.), the difference in refractive index between the translucent resin 30 and the first light diffusing material 31 becomes large, so that the rate of light emitted from the light emitting element 40 being reflected by the first light diffusing material 31 increases. As a result, the light path length of the light emitted from the light emitting element 40 that passes through the transparent resin 30 can be increased. As a result, the amount of light that hits the wavelength conversion substance 20 increases, so that color unevenness can be suppressed even if the fluorescence emission efficiency of the wavelength conversion substance 20 decreases.

Further, it is preferable that the first light diffusing material 31 is uniformly dispersed in the transparent resin 30. Since the first light diffusing material 31 is dispersed, it is possible to suppress color unevenness in the transparent resin 30. The first light diffusing material 31 is dispersed in the transparent resin 30, and the wavelength conversion substance 20 is unevenly distributed between the first light diffusing material 31 and the light extraction surface 401 of the light emitting element 40. Preferably. That is, in the translucent resin, it is preferable that the first light diffusing material is included in the region excluding the region where the wavelength conversion substance is unevenly distributed. With such an arrangement, the light emitted from the light emitting element 40 is reflected by the first light diffusing material 31 and easily hits the wavelength conversion material 20, so that color unevenness in the translucent resin 30 can be further suppressed. Therefore, the wavelength conversion substance 20 is unevenly distributed, but the first light diffusing material 31 is less likely to settle in the uncured or semi-cured translucent resin 30 as compared with the wavelength conversion substance 20, and is uniformly dispersed. It is preferable to select a material that can maintain the above state. Specifically, when selecting phosphor particles having an average particle size in the range of 5 μm to 20 μm as the wavelength conversion substance 20, the first light diffusing material 31 has, for example, an average particle size of 0.1 μm to 3 μm. A powder material in the range, preferably, a powder material having an average particle diameter in the range of 0.2 μm to 1 μm can be used. Furthermore, by including the first light diffusing material 31, the viscosity of the transparent resin 30 can be adjusted. This is preferable because it facilitates the molding of the translucent resin 30.

Further, as shown in FIG. 14B, the translucent resin 30 may contain a first light diffusing material 31 and a second light diffusing material 32. At this time, the refractive index of the first light diffusing material at 25° C. (normal temperature) is higher than the refractive index of the transparent resin 30 at 25° C. (normal temperature), and the refractive index of the second light diffusing material at 100° C. (high temperature). However, it is preferably lower than the refractive index of the transparent resin 30 at 100° C. (high temperature). By doing so, the difference in refractive index between the transparent resin 30 and the first light diffusing material 31 at the high temperature (100° C.) becomes larger than that at the normal temperature (25° C.), and the transparent resin 30 The difference in refractive index between the second light diffusing material 32 and By doing so, the refractive index difference between the translucent resin 30 and the first light diffusing material 31 and the refractive index difference between the translucent resin 30 and the second light diffusing material 32 have a complementary relationship. Thus, color unevenness due to temperature change can be further suppressed. Further, it is preferable that the first light diffusing material 31 and the second light diffusing material 32 are dispersed in the light transmissive resin 30. Since the first light diffusing material 31 and the second light diffusing material 32 are dispersed, color unevenness in the transparent resin 30 can be suppressed. Further, the translucent resin 30 may contain two or more kinds of light diffusing materials.

In the present specification, unless otherwise specified, the refractive index is a value at the peak wavelength of the light emitting element. Further, unless otherwise limited, the difference in refractive index is an absolute value. The refractive index can be measured with, for example, an Abbe refractometer. When the Abbe refractometer cannot measure due to the size of the member or the like, the member can be specified, and the refractive index can be obtained from the measurement result of the member similar to the specified member.

<Embodiment 10>
The light emitting device 7000 according to the tenth embodiment shown in FIG. 15A is that the upper surface of the light emitting device 7000 is rougher than the lower surface of the light emitting device 7000 as compared with the light emitting device 1000 according to the fourth embodiment. The light emitting element 40 and the transparent resin 30 are bonded to each other via the bonding member 60, the convex portion 103 is provided on the side wall of the through hole of the first light reflecting member 10, and the transparent resin 30 The difference is that a light diffusing material is contained. The other points are the same as in the fourth embodiment.

The upper surface of the translucent resin 30 forming the upper surface of the light emitting device 7000 is roughened. The light emitted from the light emitting element 40 is easily reflected by the upper surface of the translucent resin 30. Thereby, color unevenness in the translucent resin 30 can be suppressed. Further, the light emitting element 40 and the translucent resin 30 are joined via the joining member 60. Through the joining member 60, a part of the light emitted from the light emitting element 40 is refracted or reflected at the interface between the joining member 60 and the translucent resin 30, so that color unevenness can be suppressed. The first light reflecting member 10 has a convex portion 103 on the side wall of the through hole. As a result, part of the light emitted from the light emitting element 40 is reflected by the convex portion 103, so that color unevenness can be suppressed. The translucent resin 30 contains a light diffusion material (first light diffusion material 31, second light diffusion material 32). As a result, a part of the light emitted from the light emitting element 40 is refracted or reflected by the light diffusing material, so that color unevenness can be suppressed. With such a configuration, the optical path length of the light emitted from the light emitting element 40 in the translucent resin 30 can be increased, and thus color unevenness can be further suppressed.

A light emitting device 7000 according to the embodiment shown in FIG. 15B is a modified example of FIG. 15A, and includes a surface of the translucent resin 30 opposite to the surface on which the wavelength conversion material 20 is unevenly distributed, and the light emitting element 40. The light extraction surface 401 and the light extraction surface 401 are different from each other. The other points are the same as in FIG. 15A. Even with such a configuration, the optical path length of the light emitted from the light emitting element 40 in the translucent resin 30 can be lengthened, so that color unevenness can be suppressed.

Materials suitable for the constituent members of the light emitting devices of the fourth to tenth embodiments will be described below.
(Light emitting element 40)
As the light emitting element 40, for example, a semiconductor light emitting element such as a light emitting diode can be used. The semiconductor light emitting device may include a translucent substrate 41 and a semiconductor laminated body 42 formed thereon.

(Transparent substrate 41)
The light-transmissive substrate 41 of the light-emitting element 40 transmits a light-transmissive insulating material such as sapphire (Al ₂ O ₃ ) or spinel (MgA1 ₂ O ₄ ) or light emitted from the semiconductor stacked body 42. A semiconductor material (for example, a nitride-based semiconductor material) can be used.

(Semiconductor laminate 42)
The semiconductor stacked body 42 includes a plurality of semiconductor layers. An example of the semiconductor stacked body 42 includes three semiconductor layers of a first conductive type semiconductor layer (for example, an n type semiconductor layer), a light emitting layer (active layer), and a second conductive type semiconductor layer (for example, a p type semiconductor layer). be able to. The semiconductor layer can be formed of a semiconductor material such as a III-V group compound semiconductor or a II-VI group compound semiconductor. Specifically, a nitride-based semiconductor material such as In _X Al _Y Ga _1-X-Y N (0≦X, 0≦Y, X+Y≦1) (for example, InN, AlN, GaN, InGaN, AlGaN, InGaAlN). Etc.) can be used.

(Electrodes 43, 44)
As the electrodes 43 and 44 of the light emitting element 40, a good electric conductor can be used, and for example, a metal such as Cu is suitable.

(First light reflecting member 10)
The first light reflecting member may be a member having a reflectance of 60% or more, preferably 70% or more, with respect to the light from the light emitting element. By doing so, the light that reaches the first light reflecting member is reflected, and the light goes toward the outside of the translucent resin, so that the light extraction efficiency of the light emitting device can be improved.

Examples of the material of the first light reflecting member include a metal and a light reflecting substance (for example, titanium oxide, silicon dioxide, titanium dioxide, zirconium dioxide, potassium titanate, alumina, aluminum nitride, boron nitride, mullite, niobium oxide, barium sulfate). , Various rare earth oxides (eg, yttrium oxide, gadolinium oxide) and the like. Further, a resin, an inorganic material, glass or the like or a composite thereof containing a light reflecting substance may be used. The amount of the light-reflecting substance contained in the resin, the inorganic material, the glass or the like or a composite thereof is not particularly limited, but the light-reflecting substance is 10 to 10 parts by weight of the first light-reflecting member. It is preferable to contain 95% by weight, preferably 30 to 80% by weight, more preferably 40 to 70% by weight. In addition, it is preferable to disperse the light-reflecting substance in the resin to form the first light-reflecting member, because processing such as etching, cutting, grinding, polishing, and blasting becomes easy.

Examples of the resin material that can be used for the first light reflecting member include thermosetting resins such as silicone resin, silicone modified resin, epoxy resin, and phenol resin, polycarbonate resin, acrylic resin, methylpentene resin, polynorbornene resin, and the like. A plastic resin can be used. In particular, a silicone resin having excellent light resistance and heat resistance is suitable.

As the inorganic material that can be used for the first light reflecting member, a single layer film containing ceramics such as aluminum oxide, aluminum nitride, zirconium oxide, zirconium nitride, titanium oxide, titanium nitride, zinc oxide, or a mixture thereof, or low temperature firing ceramics, etc. Alternatively, a laminated film may be used.

(Second light reflecting member 50)
The material of the second light reflecting member can be formed using the same material as that of the first light reflecting member. The material of the second light reflecting member may be the same as the material of the first light reflecting member, but may be changed according to the characteristics. For example, you may change the content of the light-reflecting substance contained in a 1st light reflection member and a 2nd light reflection member. Since the second light reflecting member covers the side surface of the light emitting element, strength may be required more than that of the first light reflecting member. For this reason, when forming the first light reflecting member and the second light reflecting member from the resin containing the light reflecting substance, the amount of the light reflecting substance contained in the second light reflecting member is set to the first amount. The strength may be increased by reducing the amount of the light-reflecting substance contained in the single light-reflecting member. By doing so, it is possible to increase the reflectance of the first light reflecting member which is required to have higher reflectivity. Further, the first light reflection member may be required to have strength because it has a step of removing a part thereof. In this case, the amount of the light reflecting substance contained in the first light reflecting member may be smaller than the amount of the light reflecting substance contained in the second light reflecting member. By doing so, the strength of the first light reflecting member can be made higher than the strength of the second light reflecting member. The first light reflecting member may be made of a metal or a light reflecting substance, and the second light reflecting member may be made of a different material such as a resin containing a light reflecting substance.

(Translucent resin 30)
The translucent resin is a member disposed on the light extraction surface side of the light emitting element in order to protect the light emitting element from the external environment and to optically control the light output from the light emitting element. As a material of the light-transmitting resin, a thermosetting resin such as a silicone resin, a silicone-modified resin, an epoxy resin, or a phenol resin, a thermoplastic resin such as a polycarbonate resin, an acrylic resin, a methylpentene resin, or a polynorbornene resin may be used. it can. In particular, a silicone resin having excellent light resistance and heat resistance is suitable. The translucent resin preferably has a high light transmittance. Therefore, it is usually preferable that the light-transmissive resin is not added with an additive that reflects, absorbs, or scatters light. However, in some cases it may be preferable to add additives to the translucent resin to impart the desired properties.

(Wavelength conversion material 20)
As the wavelength conversion substance, for example, phosphor particles that can be excited by light emission from a light emitting element are used. For example, as a phosphor that can be excited by a blue light emitting element or an ultraviolet light emitting element, a cerium-activated yttrium-aluminum-garnet-based phosphor (Ce:YAG), a cerium-activated lutetium-aluminum-garnet-based phosphor (Ce:LAG), a nitrogen-containing calcium aluminosilicate phosphor activated by europium and/or chromium (CaO—Al ₂ O ₃ —SiO ₂ ), a silicate phosphor activated by europium ((Sr,Ba)) ₂ SiO ₄ ), β-sialon phosphor, nitride phosphor such as CASN phosphor, SCASN phosphor; fluoride phosphor such as KSF phosphor, sulfide phosphor, chloride phosphor , Silicate-based phosphors, phosphate-based phosphors, quantum dot phosphors, and the like. The general formula of the KSF-based phosphor can be represented by A ₂ [M _1-a Mn ⁴⁺ _a F ₆ ]... (I). (In the formula, A represents at least one cation selected from the group consisting of K ⁺ , Li ⁺ , Na ⁺ , Rb ⁺ , Cs ^+, and NH ₄ ⁺ , and M represents a Group 4 element and a group 4 element. At least one element selected from the group consisting of Group 14 elements is shown, and a satisfies 0.01<a<0.20.) Further, A in the general formula (I) includes K ⁺ , and M is A fluoride-based phosphor containing Si may be used. By combining these phosphors with a blue light emitting element or an ultraviolet light emitting element, a light emitting device of various colors (for example, a white light emitting device) can be manufactured.

(Joining member 60)
The joining member can be formed of a translucent resin. The material of the joining member is preferably a thermosetting light-transmitting resin such as silicone resin, silicone-modified resin, epoxy resin, or phenol resin. Since the joining member is in contact with the side surface of the light emitting element, it is easily affected by heat generated in the light emitting element during lighting. Thermosetting resins have excellent heat resistance and are suitable for joining members. The joining member preferably has a high light transmittance. Therefore, it is usually preferable that an additive that reflects, absorbs, or scatters light is not added to the bonding member. However, in some cases it may be preferable to add additives to the joining members to impart the desired properties. For example, various fillers may be added to adjust the refractive index of the joining member or to adjust the viscosity of the joining member before curing.

(First light diffusing material 31, second light diffusing material 32)
As the material of the first light diffusing material 31 and the second light diffusing material 32, specifically, SiO ₂ , Al ₂ O ₃ , Al(OH) ₃ , MgCO ₃ , TiO ₂ , ZrO ₂ , ZnO, Nb _{2 are used. O 5, MgO, Mg (OH} ) 2, SrO, in 2 O 3, TaO 2, HfO, SeO, Y 2 O 3, CaO, Na 2 O, B 2 O 3, SnO, oxides such as ZrSiO _4, Examples thereof include nitrides such as SiN, AlN and AlON, and fluorides such as MgF ₂ , CaF ₂ , NaF, LiF and Na ₃ AlF ₆ . These may be used alone or may be melt-mixed with each other and used as glass or the like. Alternatively, it may be divided into a plurality of layers and laminated.

Especially when glass is used, the refractive index can be arbitrarily controlled. The particle diameter of the light diffusing material can be arbitrarily selected from 0.01 to 100 μm. Further, the content of the light diffusing material needs to be adjusted, and cannot be uniquely determined by the volume of the coating resin and the particle diameter of the light diffusing material.

Although some embodiments according to the present invention have been exemplified above, it is needless to say that the present invention is not limited to the above-mentioned embodiments and may be any one without departing from the gist of the present invention. ..

1000, 2000, 3000, 4000, 5000, 6000, 7000 Light emitting device 10 First light reflecting member 20 Wavelength conversion material 30 Light transmissive resin 31 First light diffusing material 32 Second light diffusing material 40 Light emitting element 41 Light transmissive substrate 42 semiconductor laminated body 43, 44 electrode 50 second light reflecting member 60 joining member 70 covering member 80 supporting member 90 upper mold 91 pressing 92 lower mold 101 first surface 102 second surface 103 convex portion 106 through hole 107 Recessed portion 108 Cut portion 401 Light extraction surface 402 Electrode formation surface

Claims (8)

A light emitting element,
A translucent joining member that covers the upper surface and the side surface of the light emitting element,
A translucent member bonded to the bonding member in an area larger than the upper surface of the light emitting element;
A first light reflecting member that covers a side surface of the translucent member, and a light reflecting member that includes a second light reflecting member that covers a part of a lower surface of the light emitting element,
The translucent member, possess the wavelength converting material-containing region disposed on a lower surface side opposed to the light emitting element, and a wavelength conversion member-free region disposed on the upper surface side remote from the light emitting element,
The light emitting device in which the upper surface of the first light reflecting member is a rough surface . The light emitting device according to claim 1, wherein the second light reflecting member further covers a side surface of the joining member. The light emitting device according to claim 1, wherein an upper surface of the light reflecting member and an upper surface of the translucent member are located substantially on the same plane. The light emitting device according to claim 1, wherein an upper surface of the translucent member is a rough surface. The side of the first light reflecting member, the light emitting device according to any one of claims 1 to 4 having the convex portions. The light emitting element has an electrode on the lower surface,
The second light reflecting member covers the lower surface of the light emitting device excluding the electrode forming portion and a part of the electrode so as to be exposed,
Exposed surface from said second light reflecting member of said electrodes, the light emitting device according to any one of the second light reflective claim mirror reflectivity is higher than the lower surface of the member 1 to 5. The first light reflecting member and the second light reflecting member is made of the same material, the light-emitting device according to any one of claims 1-6. Wherein the light-transmitting member first light diffusion material into the light-emitting device according to any one of claims 1-7.

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