JPH07106638A - Manufacture of light emitting diode chip - Google Patents

Manufacture of light emitting diode chip

Info

Publication number
JPH07106638A
JPH07106638A JP5244591A JP24459193A JPH07106638A JP H07106638 A JPH07106638 A JP H07106638A JP 5244591 A JP5244591 A JP 5244591A JP 24459193 A JP24459193 A JP 24459193A JP H07106638 A JPH07106638 A JP H07106638A
Authority
JP
Japan
Prior art keywords
light emitting
emitting diode
synthetic resin
plate
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5244591A
Other languages
Japanese (ja)
Inventor
Nobuyuki Nakamura
信之 中村
Yuji Sakamoto
雄二 坂本
Junji Imai
淳史 今井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP5244591A priority Critical patent/JPH07106638A/en
Publication of JPH07106638A publication Critical patent/JPH07106638A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Led Device Packages (AREA)

Abstract

PURPOSE:To increase the yield in manufacture while lowering the taping cost by filling, drying and curing the sealing synthetic resin and dicing individual light emitting diode under a state where a laminate of a material board and a material frame plate is applied to the surface of a film stretched over a ring body. CONSTITUTION:A material frame plate is bonded through an adhesive to the upper surface of a material board to produce a laminate 13 which is then applied to the surface of a film 15 stretched on the inside of a rigid ring body 14 made of a metal plate, for example. Each frame is then filled with a sealing synthetic resin. At the time of filling, the film 15 is sucked and the planarity of the laminate 13 is corrected. It is then placed in a heating furnace in order to dry and cure the sealing synthetic resin. Subsequently, individual light emitting diode chips are diced by means of a high speed rotary dicing cutter under a state where the laminate 13 is applied to the film 15. Thus diced LED chip is picked up by means of a vacuum suction collect prior to taping work.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、発光ダイオードのうち
面実装に適するようにチップ型に構成した発光ダイオー
ドを製造する方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a light emitting diode, which is a chip type light emitting diode suitable for surface mounting.

【0002】[0002]

【従来の技術】この種のチップ型発光ダイオード1は、
実開平5−4529号公報に記載され、且つ、図1〜図
3に示すように、ガラスエポキシ樹脂又はセラミック等
の耐熱材料製のチップ型絶縁基板2の上面に左右一対の
上面電極3,4を、下面に左右一対の下面電極5a,6
aを各々形成し、前記絶縁基板2の左右両端面に、一方
の上面電極3と一方の下面電極5aとを接続するスルー
ホール電極5b、及び他方の上面電極4と他方の下面電
極6aとを接続するスルーホール電極6bを形成する一
方、前記一方の上面電極3にダイボンディングした半導
体チップ7と他方の上面電極4との間を金属線8による
ワイヤボンディングにて接続し、更に、前記絶縁基板2
の上面に非透明合成樹脂製の枠体9を固着して、この枠
体9内に、透明又は半透明の封止用合成樹脂10を充填
すると言う構成にしている。
2. Description of the Related Art A chip type light emitting diode 1 of this type is
As described in Japanese Utility Model Application Laid-Open No. 5-4529, and as shown in FIGS. 1 to 3, a pair of left and right upper surface electrodes 3, 4 are provided on the upper surface of a chip-type insulating substrate 2 made of a heat-resistant material such as glass epoxy resin or ceramic. A pair of left and right lower surface electrodes 5a, 6 on the lower surface.
a is formed respectively, and through-hole electrodes 5b connecting one upper surface electrode 3 and one lower surface electrode 5a, and the other upper surface electrode 4 and the other lower surface electrode 6a are formed on both left and right end surfaces of the insulating substrate 2. While forming a through-hole electrode 6b to be connected, the semiconductor chip 7 die-bonded to the one upper surface electrode 3 and the other upper surface electrode 4 are connected by wire bonding with a metal wire 8, and further, the insulating substrate Two
A frame body 9 made of non-transparent synthetic resin is fixed to the upper surface of the above, and a transparent or semitransparent synthetic resin 10 for sealing is filled in the frame body 9.

【0003】そして、このチップ型発光ダイオードの製
造に際して、従来は、先づ、一つのチップ型発光ダイオ
ードを構成する絶縁基板2の多数個を一体化した素材基
板を用意し、この素材基板における各絶縁基板の箇所の
各々に前記両上面電極3,4、前記両下面電極5a,6
a及び前記両スルーホール電極5b,6bを各々形成
し、次いで、半導体チップ7のダイボンディングと、金
属線8によるワイヤボンディングを行う一方、この素材
基板の上面に、一つのチップ型発光ダイオードを構成す
る枠体9の多数個を一体化した素材枠体板を接着剤にて
張り合わせて積層板にし、この積層板のうち前記素材枠
体板における各枠体9内に封止用合成樹脂10を充填
し、この封止用合成樹脂10を乾燥・硬化したのち、前
記積層板を、各チップ型発光ダイオード1ごとに切断す
ると言う方法を採用している。
In the manufacture of this chip type light emitting diode, conventionally, a material substrate in which a large number of insulating substrates 2 constituting one chip type light emitting diode are integrated is prepared in advance. The upper surface electrodes 3 and 4 and the lower surface electrodes 5a and 6 are respectively provided on the insulating substrate.
a and the through-hole electrodes 5b and 6b are formed respectively, and then die bonding of the semiconductor chip 7 and wire bonding with the metal wire 8 are performed, while one chip type light emitting diode is formed on the upper surface of the material substrate. The material frame plates in which a large number of the frame bodies 9 to be integrated are stuck together with an adhesive to form a laminated plate, and the sealing synthetic resin 10 is provided in each frame body 9 of the material frame plate among the laminated plates. A method is used in which after filling and sealing and drying the synthetic resin 10, the laminated plate is cut into each chip type light emitting diode 1.

【0004】[0004]

【発明が解決しようとする課題】しかし、この従来の製
造方法は、 .前記素材基板に対して素材枠体板を接着剤にて張り
合わせたとき、この積層板が、前記素材基板及び素材枠
体板における熱膨張率の差によって、湾曲状にそり変形
し、この湾曲状にそり変形した状態で、素材枠体板にお
ける各枠体9内への封止用合成樹脂10の充填と、積層
板の各発光ダイオードごとの切断とを行うようにしてい
ることにより、封止用合成樹脂10の充填に際して、こ
の封止用合成樹脂10が枠体9内から溢れ出すことが多
発することになり、また、切断したあとににおける発光
ダイオードの形状が傾いた歪な形状になるから、製品の
歩留り率が低い。 .積層板のうち素材枠体板における各枠体9内に充填
した封止用合成樹脂10を乾燥・硬化するに際しては、
複数枚の積層板を積み重ねることができず、複数枚の積
層板を平面状に並べるようにしなければならず、前記の
乾燥・硬化に広いスペースを必要とするから、設備が大
型化する。 .前記積層板を、各チップ型発光ダイオード1ごとに
切断したとき、各チップ型発光ダイオード1がバラバラ
になるので、このチップ型発光ダイオード1を、キャリ
アテープにその長手方向に沿って適宜ピッチの間隔で凹
み形成した部品収納部に、当該チップ型発光ダイオード
の方向を揃えて一個ずつ収納すると言ういわゆるテーピ
ング作業がきわめて困難で、テーピングに要するコスト
が大幅にアップする。 と言う問題があった。
However, the conventional manufacturing method is as follows. When the material frame plate is attached to the material substrate with an adhesive, this laminated plate is warped and deformed due to the difference in the coefficient of thermal expansion between the material substrate and the material frame plate. By sealing the synthetic resin 10 for sealing into each frame 9 in the material frame plate and cutting each light emitting diode of the laminated plate in a state of being warped and deformed, sealing is performed. When the synthetic resin 10 for filling is filled, the synthetic resin 10 for sealing often overflows from the inside of the frame body 9, and the shape of the light emitting diode after cutting becomes an inclined and distorted shape. Therefore, the product yield rate is low. . When drying and curing the sealing synthetic resin 10 filled in each frame 9 of the material frame plate of the laminated plate,
Since a plurality of laminated plates cannot be stacked and the plurality of laminated plates must be arranged in a plane, a large space is required for the drying / curing, so that the equipment becomes large. . When the laminated plate is cut into each chip type light emitting diode 1, each chip type light emitting diode 1 becomes disjointed. Therefore, the chip type light emitting diodes 1 are arranged on the carrier tape at appropriate pitch intervals along the longitudinal direction thereof. Thus, the so-called taping work of accommodating the chip type light emitting diodes one by one in the recessed and formed component storage portion is extremely difficult, and the cost required for taping increases significantly. There was a problem to say.

【0005】本発明は、これらの問題を解消した製造方
法を提供することを技術的課題とするものである。
The present invention has a technical object to provide a manufacturing method which solves these problems.

【0006】[0006]

【課題を解決するための手段】この技術的課題を達成す
るため本発明は、「一つの発光ダイオードを構成する絶
縁基板の多数個を一体化した素材基板に、前記各絶縁基
板ごとに電極を形成したのち、この素材基板に、一つの
発光ダイオードを構成する枠体の多数個を一体化した素
材枠体板を張り合わせて積層板にし、この積層板のうち
前記素材枠体板における各枠体内に封止用合成樹脂を充
填し、次いで、この封止用合成樹脂を乾燥・硬化したの
ち、前記積層板を、各発光ダイオードごとに切断するよ
うにした製造方法において、前記素材基板と素材枠体板
とを張り合わせた積層板を、リング体の内側に張設して
成るフィルムの表面に貼着し、この状態で、前記各枠体
内への封止用合成樹脂の充填、及びこの封止用合成樹脂
の乾燥・硬化、並びに前記積層板の各発光ダイオードご
との切断を行う。」と言う方法を採用した。
In order to achieve this technical object, the present invention provides a "material substrate in which a large number of insulating substrates constituting one light emitting diode are integrated, and an electrode is provided for each insulating substrate. After being formed, a material frame plate in which a large number of frame bodies constituting one light emitting diode are integrated is laminated to the material substrate to form a laminated plate, and each frame in the material frame plate of the laminated plate is formed. In the manufacturing method, in which the sealing synthetic resin is filled in, then, the sealing synthetic resin is dried and cured, and the laminated plate is cut into each light emitting diode. A laminated plate laminated with a body plate is attached to the surface of a film stretched on the inside of a ring body, and in this state, the synthetic resin for sealing is filled into each of the frame bodies, and this sealing is performed. Drying and curing of synthetic resin for normal use For cutting of each light-emitting diode of the laminates. Adopting a way of saying ".

【0007】[0007]

【作 用】このように、素材基板と素材枠体板とを張
り合わせた積層板を、リング体の内側に張設して成るフ
ィルムの表面に貼着することにより、前記積層板のうち
素材枠体板における各枠体内への封止用合成樹脂の充填
に際しては、前記フィルムの裏面側に、真空吸着孔を多
数個穿設した平面板を接触し、この平面板に対して前記
フィルムを真空吸着することで、当該フィルムの表面側
に貼着されている積層板を平面状に矯正することが簡単
にでき、換言すると、前記積層板に、その素材基板と素
材枠体板との両方における熱膨張差のために湾曲状のそ
り変形が存在しても、この湾曲状のそり変形を、簡単に
平面状に矯正することができ、この状態で、素材枠体板
における各枠体内に封止用合成樹脂を充填することがで
きるから、封止用合成樹脂が溢れ出すことを確実に低減
できるのである。
[Operation] In this way, by sticking the laminated plate obtained by laminating the material substrate and the material frame body plate to the surface of the film stretched inside the ring body, the material frame of the laminated plate can be obtained. At the time of filling the synthetic resin for sealing into each frame in the body plate, a flat plate having a large number of vacuum suction holes is brought into contact with the back surface of the film, and the flat film is vacuumed against the flat plate. By adsorbing, it is possible to easily correct the laminated plate stuck to the front surface side of the film into a flat shape, in other words, in the laminated plate, in both the material substrate and the material frame body plate. Even if there is a curved warp deformation due to the difference in thermal expansion, this curved warp deformation can be easily corrected to a flat shape, and in this state, it is sealed in each frame of the material frame plate. Since it can be filled with a synthetic resin for stopping, It is possible to reliably reduce resin overflow.

【0008】また、前記積層板を、各発光ダイオードご
とに切断するに際しても、前記と同様に、フィルムの裏
面側に、真空吸着孔を多数個穿設した平面板を接触し、
この平面板に対して前記フィルムを真空吸着すること
で、当該フィルムの表面側に貼着されている積層板を平
面状に矯正することが簡単にできから、切断後における
発光ダイオードの形状が傾いた歪な形状になることを確
実に防止できるのである。
When the laminated plate is cut into individual light emitting diodes, a flat plate having a large number of vacuum suction holes is brought into contact with the back surface of the film in the same manner as above.
By vacuum-sucking the film to the flat plate, the laminated plate attached to the front surface side of the film can be easily corrected into a flat form, so that the shape of the light emitting diode after cutting is inclined. It is possible to reliably prevent a distorted shape.

【0009】しかも、前記封止用合成樹脂の乾燥・硬化
に際しては、前記フィルムを支持するリング体を、マガ
ジンラック等を利用して多段状に積み重ねることができ
るから、狭いスペースで多数枚の乾燥・硬化を行うこと
ができるのである。その上、前記積層板の各発光ダイオ
ードごとの切断を、当該積層板をフィルムに貼着した状
態で行うことにより、切断した後における各発光ダイオ
ードがバラバラになることがないから、この各発光ダイ
オードを、テープ状マガジンに対して一定方向に揃えて
テーピングすることが容易にできるのである。
Moreover, when the sealing synthetic resin is dried and cured, the ring bodies supporting the film can be stacked in multiple stages by using a magazine rack or the like, so that a large number of sheets can be dried in a narrow space. -It can be cured. Furthermore, by cutting each light emitting diode of the laminated plate in a state where the laminated plate is adhered to the film, the light emitting diodes after cutting do not become disjointed, so that each light emitting diode It is possible to easily align and tape the tape-shaped magazine in a certain direction.

【0010】[0010]

【発明の効果】従って、チップ型発光ダイオードの製造
に際して、製品の歩留り率を大幅に向上できると共に、
設備を小型化することができ、しかも、各チップ型ダイ
オードのテーピングに要するコストを大幅に低減できる
効果を有する。
As described above, when the chip type light emitting diode is manufactured, the yield rate of the product can be greatly improved, and
The equipment can be downsized, and the cost required for taping each chip type diode can be significantly reduced.

【0011】[0011]

【実施例】以下、本発明の実施例を、図〜図12の図面
について説明する。この図4において符号11は、前記
図1〜図3に示す一つのチップ型発光ダイオード1を構
成する絶縁基板2の多数個を一体化して成る素材基板を
示す。また、符号12は、前記一つのチップ型発光ダイ
オード1を構成する枠体9の多数個を一体化して成る素
材枠体板を示す。
Embodiments of the present invention will be described below with reference to the drawings of FIGS. In FIG. 4, reference numeral 11 denotes a material substrate formed by integrating a large number of insulating substrates 2 constituting one chip type light emitting diode 1 shown in FIGS. Further, reference numeral 12 denotes a material frame plate which is formed by integrating a large number of frame bodies 9 constituting the one chip type light emitting diode 1.

【0012】前記素材基板11の表面には、その各絶縁
基板2の箇所の各々に両上面電極3,4、両下面電極5
a,6a及び両スルーホール電極5b,6bを各々形成
したのち、半導体チップ7のダイボンディングと、金属
線8によるワイヤボンディングを行う。なお、前記半導
体チップ7のダイボンディング及び金属線8によるワイ
ヤボンディングは、後述する素材枠体板12の張り合わ
せ後において行うようにしても良い。
On the surface of the material substrate 11, both upper surface electrodes 3 and 4 and both lower surface electrodes 5 are provided at respective positions of the respective insulating substrates 2.
After forming a and 6a and both through-hole electrodes 5b and 6b, respectively, die bonding of the semiconductor chip 7 and wire bonding with the metal wire 8 are performed. The die bonding of the semiconductor chip 7 and the wire bonding with the metal wire 8 may be performed after the material frame plate 12 to be described later is bonded.

【0013】そして、前記素材基板11の上面に対して
前記素材枠体板12を、図5〜図7に示すように、接着
剤にて張り合わせて積層板13にする。次いで、この積
層板13を、図8及び図9に示すように、金属板等の剛
体製リング体14の内側に張設して成るフィルム15の
表面に貼着したのち、この状態で、当該積層板13のう
ち素材枠体板12における各枠体9内に、封止用合成樹
脂10をデスペンサーノズル16からの注入にて充填す
るのである。
Then, the material frame plate 12 is bonded to the upper surface of the material substrate 11 with an adhesive to form a laminated plate 13, as shown in FIGS. Next, as shown in FIGS. 8 and 9, the laminated plate 13 is attached to the surface of the film 15 stretched inside the rigid ring body 14 such as a metal plate, and then in this state, The synthetic resin 10 for sealing is filled in each frame 9 in the material frame plate 12 of the laminated plate 13 by injection from the dispenser nozzle 16.

【0014】この封止用合成樹脂10の充填に際して
は、前記フィルム15の裏面側に、真空吸着孔17を多
数個穿設した平面板18を接触し、この平面板18に対
して前記フィルム15を真空吸着することにより、この
フィルム15の表面側に貼着されている積層板13を平
面状に矯正することができ、換言すると、前記積層板1
3に、その素材基板11と素材枠体板12との両方にお
ける熱膨張差のために図6に二点鎖線で示すような湾曲
状のそり変形が存在しても、このそり変形を平面状に矯
正でき、この状態で、素材枠体板12における各枠体9
内に封止用合成樹脂10を充填することができるのであ
る。
When the synthetic resin 10 for sealing is filled, a flat plate 18 having a large number of vacuum suction holes 17 is brought into contact with the back surface of the film 15 and the film 15 is attached to the flat plate 18. By vacuum adsorbing, the laminated plate 13 adhered to the front surface side of the film 15 can be corrected into a flat shape. In other words, the laminated plate 1
3, even if there is a curved warp deformation as shown by the chain double-dashed line in FIG. 6 due to the difference in thermal expansion between both the material substrate 11 and the material frame plate 12, this warp deformation is caused by the planar deformation. Each frame 9 in the material frame plate 12 can be corrected to
The sealing synthetic resin 10 can be filled therein.

【0015】この封止用合成樹脂10の充填が完了する
と、加熱炉に入れてこの封止用合成樹脂10を乾燥・硬
化するのであるが、この乾燥・硬化に際しては、図10
に示すように、マガジンラック19を使用し、このマガ
ジンラック19内に多段状に重ねて収納することによ
り、狭いスペースで多数枚の乾燥・硬化を行うことがで
きるのである。
When the filling of the sealing synthetic resin 10 is completed, the sealing synthetic resin 10 is placed in a heating oven to dry and cure the sealing synthetic resin 10.
As shown in, by using a magazine rack 19 and stacking and accommodating the magazine rack 19 in multiple stages, it is possible to dry and cure a large number of sheets in a narrow space.

【0016】そして、この封止用合成樹脂10の乾燥・
硬化が完了すると、前記積層板13を、当該積層板13
をフィルム15に対して貼着した状態のままで、図11
に示すように、高速回転式のダイシングカッタ20,2
1によって、各チップ型発光ダイオード1ごとに切断す
るのであり、ここに切断された各チップ型発光ダイオー
ド1は、前記フィルム15に貼着したままであるから、
バラバラになることが防止できる。
Then, the sealing synthetic resin 10 is dried.
When the curing is completed, the laminated plate 13 is replaced with the laminated plate 13
11 is still attached to the film 15 as shown in FIG.
As shown in FIG.
1, each chip type light emitting diode 1 is cut, and each chip type light emitting diode 1 cut here is still attached to the film 15.
It can be prevented from falling apart.

【0017】また、この積層板13を、前記ダイシング
カッタ20,21によって各チップ型発光ダイオード1
ごとに切断するに際しても、前記封止用合成樹脂10を
充填する場合と同様に、フィルム15の裏面側に、真空
吸着孔17を多数個穿設した平面板18を接触し、この
平面板18に対して前記フィルム15を真空吸着するこ
とにより、このフィルム15の表面側に貼着されている
積層板13を平面状に矯正することができるのである。
The laminated plate 13 is attached to each chip type light emitting diode 1 by the dicing cutters 20 and 21.
Also in the case of cutting into individual pieces, similar to the case where the sealing synthetic resin 10 is filled, a flat plate 18 having a large number of vacuum suction holes 17 formed therein is brought into contact with the back surface of the film 15, and the flat plate 18 is cut. On the other hand, by vacuum-adsorbing the film 15, the laminated plate 13 attached to the surface side of the film 15 can be straightened.

【0018】次に、この各チップ型発光ダイオード1
を、図12に示すように、針状体22等の突き上げによ
って真空吸着式コレット23にて真空吸着してピックア
ップしたのち、送りローラ24に移送されるキャリアテ
ープ25における部品収納部25a内に一定の方向に揃
えた状態で一個ずつ装填すると言うテーピンク作業を行
うのである。
Next, each chip type light emitting diode 1
As shown in FIG. 12, after being picked up by vacuum suction by the vacuum suction collet 23 by pushing up the needle-shaped body 22 or the like, the carrier tape 25 transferred to the feed roller 24 is fixed in the component storage portion 25a. The tapering work of loading one by one in a state aligned in the direction is performed.

【図面の簡単な説明】[Brief description of drawings]

【図1】チップ型発光ダイオードの斜視図である。FIG. 1 is a perspective view of a chip type light emitting diode.

【図2】図1のII−II視断面図である。FIG. 2 is a sectional view taken along line II-II of FIG.

【図3】図2のIII −III 視断面図である。FIG. 3 is a sectional view taken along line III-III in FIG.

【図4】素材基板及び素材枠体板の斜視図である。FIG. 4 is a perspective view of a material substrate and a material frame plate.

【図5】前記素材基板及び素材枠体板を張り合わせた積
層板の斜視図である。
FIG. 5 is a perspective view of a laminated plate in which the material substrate and the material frame plate are attached to each other.

【図6】図5の側面図である。FIG. 6 is a side view of FIG.

【図7】図5のVII −VII 視拡大断面図である。FIG. 7 is an enlarged sectional view taken along line VII-VII of FIG.

【図8】前記積層板をフィルムに貼着した状態の斜視図
である。
FIG. 8 is a perspective view showing a state in which the laminated plate is attached to a film.

【図9】図8のIX−IX視断面図である。9 is a sectional view taken along line IX-IX in FIG.

【図10】マガジンラックを示す斜視図である。FIG. 10 is a perspective view showing a magazine rack.

【図11】前記積層板を発光ダイオードごとに切断して
いる状態を示す斜視図である。
FIG. 11 is a perspective view showing a state in which the laminated plate is cut into individual light emitting diodes.

【図12】フィルムにおける発光ダイオードをキャリア
テープにテーピングしている状態を示す断面図である。
FIG. 12 is a cross-sectional view showing a state in which a light emitting diode in a film is taped to a carrier tape.

【符号の説明】[Explanation of symbols]

1 チップ型発光ダイオード 2 絶縁基板 3,4 電極 7 半導体チップ 8 金属線 9 枠体 10 封止用合成樹脂 11 素材基板 12 素材枠体板 13 積層板 14 リング体 15 フィルム 16 デスペンサーノズル 18 真空吸着式平面板 19 マガジンラック 20,21 ダイシングカッタ 23 真空吸着式コレット 25 キャリアテープ 1 Chip type light emitting diode 2 Insulating substrate 3,4 Electrode 7 Semiconductor chip 8 Metal wire 9 Frame 10 Synthetic resin for sealing 11 Material substrate 12 Material frame plate 13 Laminated plate 14 Ring body 15 Film 16 Dispenser nozzle 18 Vacuum adsorption Flat plate 19 Magazine rack 20,21 Dicing cutter 23 Vacuum suction collet 25 Carrier tape

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】一つの発光ダイオードを構成する絶縁基板
の多数個を一体化した素材基板に、前記各絶縁基板ごと
に電極を形成したのち、この素材基板に、一つの発光ダ
イオードを構成する枠体の多数個を一体化した素材枠体
板を張り合わせて積層板にし、この積層板のうち前記素
材枠体板における各枠体内に封止用合成樹脂を充填し、
次いで、この封止用合成樹脂を乾燥・硬化したのち、前
記積層板を、各発光ダイオードごとに切断するようにし
た製造方法において、前記素材基板と素材枠体板とを張
り合わせた積層板を、リング体の内側に張設して成るフ
ィルムの表面に貼着し、この状態で、前記各枠体内への
封止用合成樹脂の充填、及びこの封止用合成樹脂の乾燥
・硬化、並びに前記積層板の各発光ダイオードごとの切
断を行うことを特徴とするチップ型発光ダイオードの製
造方法。
1. A frame for constituting one light emitting diode after forming an electrode for each insulating substrate on a material substrate in which a large number of insulating substrates constituting one light emitting diode are integrated. A material frame body plate in which a large number of bodies are integrated is laminated to form a laminated plate, and a synthetic resin for sealing is filled in each frame body in the material frame body plate of the laminated plate,
Then, after drying and curing the synthetic resin for sealing, the laminated plate, in the manufacturing method so as to be cut for each light emitting diode, a laminated plate obtained by bonding the material substrate and the material frame plate, Affixed to the surface of the film stretched inside the ring body, in this state, filling the sealing synthetic resin into each of the frame body, and drying and curing of the sealing synthetic resin, and the A method of manufacturing a chip type light emitting diode, which comprises cutting each light emitting diode of a laminated plate.
JP5244591A 1993-09-30 1993-09-30 Manufacture of light emitting diode chip Pending JPH07106638A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5244591A JPH07106638A (en) 1993-09-30 1993-09-30 Manufacture of light emitting diode chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5244591A JPH07106638A (en) 1993-09-30 1993-09-30 Manufacture of light emitting diode chip

Publications (1)

Publication Number Publication Date
JPH07106638A true JPH07106638A (en) 1995-04-21

Family

ID=17121005

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5244591A Pending JPH07106638A (en) 1993-09-30 1993-09-30 Manufacture of light emitting diode chip

Country Status (1)

Country Link
JP (1) JPH07106638A (en)

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