JP7288041B2 - 発光素子 - Google Patents
発光素子 Download PDFInfo
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- JP7288041B2 JP7288041B2 JP2021506742A JP2021506742A JP7288041B2 JP 7288041 B2 JP7288041 B2 JP 7288041B2 JP 2021506742 A JP2021506742 A JP 2021506742A JP 2021506742 A JP2021506742 A JP 2021506742A JP 7288041 B2 JP7288041 B2 JP 7288041B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
- H01L33/0016—Devices characterised by their operation having p-n or hi-lo junctions having at least two p-n junctions
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- H01—ELECTRIC ELEMENTS
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0756—Stacked arrangements of devices
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
Description
。
Claims (16)
- 第1n型半導体層、および垂直に積層された第1活性層、第1p型半導体層及び第1透明電極を含み、前記第1n型半導体層の第1面の一部を露出させる第1メサ構造体を含む第1発光部と、
前記第1n型半導体層の前記露出された部分に配置され、前記第1メサ構造体と離隔され、第2n型半導体層、第2活性層、第2p型半導体層、及び第2透明電極を含む第2発光部と、
前記第1n型半導体層と前記第2n型半導体層との間を接合して電気的に接続する第1接合部と、を含む、
発光素子。 - 前記第2発光部は、垂直に積層された前記第2活性層、前記第2p型半導体層、及び前記第2透明電極を含む第2メサ構造体を含み、
前記第2メサ構造体は、前記第2n型半導体層の一部を露出させる、
請求項1に記載の発光素子。 - 前記第2n型半導体層の前記露出した部分上に配置され、第3n型半導体層、第3活性層、第3p型半導体層及び第3透明電極を含む第3発光部と、
前記第2n型半導体層と前記第3n型半導体層の間で、前記第2発光部及び前記第3発光部を接合して電気的に接続する第2接合部と、をさらに含む、
請求項2に記載の発光素子。 - 前記第2接合部の厚さは、前記第2活性層の厚さよりも大きい、
請求項3に記載の発光素子。 - 前記第1メサ構造体、前記第2メサ構造体、および前記第3発光部は互いに同一サイズを有する、
請求項3に記載の発光素子。 - 前記第1透明電極と電気的に接続される第1パッドと、
前記第2透明電極と電気的に接続される第2パッドと、
前記第3透明電極と電気的に接続される第3パッドと、
前記第1n型半導体層、前記第2n型半導体層および前記第3n型半導体層と電気的に接続されている共通パッドと、をさらに含む
請求項3に記載の発光素子。 - 前記共通パッドは、前記第1n型半導体層の一面に対向する他の面に配置される
請求項6に記載の発光素子。 - 前記共通パッドは、第1n型半導体層の前記露出した部分に配置される
請求項6に記載の発光素子。 - 前記共通パッドは、前記露出した第2n型半導体層上に配置される、
請求項6に記載の発光素子。 - 前記第3発光部は、前記第3活性層、前記第3p型半導体層、及び前記第3透明電極を有する第3メサ構造体を含み、
前記第3メサ構造体は、前記第3n型半導体層の一部を露出させ、
前記共通パッドは、前記露出した第3n型半導体層上に配置される
請求項6に記載の発光素子。 - 前記露出した第1n型半導体層上に配置され、前記第2発光部と離隔されて配置され、第3n型半導体層、第3活性層、第3p型半導体層、及び第3透明電極を含む第3発光部をさらに含む、
請求項1に記載の発光素子。 - 前記第1n型半導体層と第3n型半導体層の間で前記第1発光部及び前記第3発光部を接合し、電気的に接続する第2接合部をさらに含む、
請求項11に記載の発光素子。 - 前記第1接合部は、前記第1n型半導体層と前記第3n型半導体層の間に延長され、前記第1発光部と前記第3発光部とを接合して電気的に接続する、
請求項11に記載の発光素子。 - 前記第1メサ構造体、前記第2発光部と、前記第3発光部は、互いに同じサイズを有する、
請求項11に記載の発光素子。 - 前記第1n型半導体層の露出した部分に前記第2発光部及び前記第3発光部との間に配置される光遮断膜をさらに含む、
請求項11に記載の発光素子。 - 前記第1接合部の厚さは、前記第1活性層の厚さよりも大きい、
請求項1に記載の発光素子。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862764961P | 2018-08-17 | 2018-08-17 | |
US62/764,961 | 2018-08-17 | ||
US16/536,627 | 2019-08-09 | ||
US16/536,627 US10879419B2 (en) | 2018-08-17 | 2019-08-09 | Light emitting device |
PCT/KR2019/010326 WO2020036423A1 (ko) | 2018-08-17 | 2019-08-13 | 발광 소자 |
Publications (2)
Publication Number | Publication Date |
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JP2021534574A JP2021534574A (ja) | 2021-12-09 |
JP7288041B2 true JP7288041B2 (ja) | 2023-06-06 |
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JP2021506742A Active JP7288041B2 (ja) | 2018-08-17 | 2019-08-13 | 発光素子 |
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US (3) | US10879419B2 (ja) |
EP (1) | EP3840066B1 (ja) |
JP (1) | JP7288041B2 (ja) |
KR (1) | KR20210033480A (ja) |
CN (2) | CN210129519U (ja) |
BR (1) | BR112021002851A2 (ja) |
WO (1) | WO2020036423A1 (ja) |
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JP2021168360A (ja) * | 2020-04-13 | 2021-10-21 | 日亜化学工業株式会社 | 発光装置の製造方法 |
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CN116918068A (zh) * | 2021-03-19 | 2023-10-20 | 苏州晶湛半导体有限公司 | 半导体发光器件及其制备方法 |
CN116825910B (zh) * | 2023-08-29 | 2023-11-10 | 季华实验室 | 阵列基板的制备方法、阵列基板、显示面板及显示装置 |
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2019
- 2019-08-09 US US16/536,627 patent/US10879419B2/en active Active
- 2019-08-13 KR KR1020217002548A patent/KR20210033480A/ko unknown
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EP3840066B1 (en) | 2023-08-02 |
WO2020036423A1 (ko) | 2020-02-20 |
CN210129519U (zh) | 2020-03-06 |
BR112021002851A2 (pt) | 2021-05-18 |
EP3840066C0 (en) | 2023-08-02 |
CN112585768B (zh) | 2024-04-02 |
US20230025374A1 (en) | 2023-01-26 |
US11804566B2 (en) | 2023-10-31 |
US20200058824A1 (en) | 2020-02-20 |
US20210091256A1 (en) | 2021-03-25 |
KR20210033480A (ko) | 2021-03-26 |
US11469342B2 (en) | 2022-10-11 |
EP3840066A1 (en) | 2021-06-23 |
US10879419B2 (en) | 2020-12-29 |
CN112585768A (zh) | 2021-03-30 |
EP3840066A4 (en) | 2022-06-01 |
JP2021534574A (ja) | 2021-12-09 |
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