JP7282795B2 - 低角度拡散のマルチレベルパラメータおよび周波数パルス - Google Patents

低角度拡散のマルチレベルパラメータおよび周波数パルス Download PDF

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JP7282795B2
JP7282795B2 JP2020549047A JP2020549047A JP7282795B2 JP 7282795 B2 JP7282795 B2 JP 7282795B2 JP 2020549047 A JP2020549047 A JP 2020549047A JP 2020549047 A JP2020549047 A JP 2020549047A JP 7282795 B2 JP7282795 B2 JP 7282795B2
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level
parameter
signal
frequency
time
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JPWO2019182847A5 (https=
JP2021518629A5 (https=
JP2021518629A (ja
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シューブ・ジュリーン
パターソン・アレックス
ウー・イン
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/327—Arrangements for generating the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2020549047A 2018-03-21 2019-03-14 低角度拡散のマルチレベルパラメータおよび周波数パルス Active JP7282795B2 (ja)

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JP2023081175A JP7571193B2 (ja) 2018-03-21 2023-05-17 低角度拡散のマルチレベルパラメータおよび周波数パルス

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/928,039 US10224183B1 (en) 2018-03-21 2018-03-21 Multi-level parameter and frequency pulsing with a low angular spread
US15/928,039 2018-03-21
PCT/US2019/022191 WO2019182847A1 (en) 2018-03-21 2019-03-14 Multi-level parameter and frequency pulsing with a low angular spread

Related Child Applications (1)

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JP2023081175A Division JP7571193B2 (ja) 2018-03-21 2023-05-17 低角度拡散のマルチレベルパラメータおよび周波数パルス

Publications (4)

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JP2021518629A JP2021518629A (ja) 2021-08-02
JPWO2019182847A5 JPWO2019182847A5 (https=) 2022-04-20
JP2021518629A5 JP2021518629A5 (https=) 2022-04-20
JP7282795B2 true JP7282795B2 (ja) 2023-05-29

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JP2020549047A Active JP7282795B2 (ja) 2018-03-21 2019-03-14 低角度拡散のマルチレベルパラメータおよび周波数パルス
JP2023081175A Active JP7571193B2 (ja) 2018-03-21 2023-05-17 低角度拡散のマルチレベルパラメータおよび周波数パルス

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US (4) US10224183B1 (https=)
JP (2) JP7282795B2 (https=)
KR (1) KR20200124318A (https=)
WO (1) WO2019182847A1 (https=)

Families Citing this family (10)

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Publication number Priority date Publication date Assignee Title
CN109148250B (zh) * 2017-06-15 2020-07-17 北京北方华创微电子装备有限公司 阻抗匹配装置和阻抗匹配方法
US10224183B1 (en) * 2018-03-21 2019-03-05 Lam Research Corporation Multi-level parameter and frequency pulsing with a low angular spread
US10504744B1 (en) * 2018-07-19 2019-12-10 Lam Research Corporation Three or more states for achieving high aspect ratio dielectric etch
CN114041201B (zh) * 2019-04-29 2024-12-06 朗姆研究公司 用于rf等离子体工具中的多级脉冲的系统和方法
CN110779187B (zh) * 2019-11-04 2021-03-30 广东美的暖通设备有限公司 信号发送装置、信号接收装置、通讯装置及空调器
TWI889813B (zh) * 2020-05-14 2025-07-11 日商東京威力科創股份有限公司 電漿處理裝置
JP7588516B2 (ja) * 2020-05-14 2024-11-22 東京エレクトロン株式会社 プラズマ処理装置
US12609283B2 (en) 2020-06-15 2026-04-21 Lam Research Corporation Control of pulsing frequencies and duty cycles of parameters of RF signals
KR20260048616A (ko) * 2020-07-15 2026-04-10 램 리써치 코포레이션 플라즈마 챔버의 rf 코일들의 역 동기화된 펄싱
JP2024514105A (ja) * 2021-04-07 2024-03-28 ラム リサーチ コーポレーション プラズマシース特性を制御するためのシステムおよび方法

Citations (1)

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JP2009246091A (ja) 2008-03-31 2009-10-22 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法及びコンピュータ読み取り可能な記憶媒体

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US9123509B2 (en) 2007-06-29 2015-09-01 Varian Semiconductor Equipment Associates, Inc. Techniques for plasma processing a substrate
WO2013112481A1 (en) * 2012-01-23 2013-08-01 NuLEDs, Inc. Powering and/or controlling leds using a network infrastructure
US9390893B2 (en) * 2012-02-22 2016-07-12 Lam Research Corporation Sub-pulsing during a state
US9462672B2 (en) 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
US9197196B2 (en) 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
US9171699B2 (en) 2012-02-22 2015-10-27 Lam Research Corporation Impedance-based adjustment of power and frequency
TWI599272B (zh) 2012-09-14 2017-09-11 蘭姆研究公司 根據三個或更多狀態之功率及頻率調整
US9336995B2 (en) 2013-04-26 2016-05-10 Mks Instruments, Inc. Multiple radio frequency power supply control of frequency and phase
US9711332B2 (en) * 2013-05-09 2017-07-18 Lam Research Corporation Systems and methods for tuning an impedance matching network in a step-wise fashion for multiple states of an RF generator
JP6324223B2 (ja) * 2014-06-09 2018-05-16 住友重機械イオンテクノロジー株式会社 イオン注入装置及びイオン注入方法
US9536749B2 (en) 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
US9721758B2 (en) * 2015-07-13 2017-08-01 Mks Instruments, Inc. Unified RF power delivery single input, multiple output control for continuous and pulse mode operation
US10128082B2 (en) * 2015-07-24 2018-11-13 Varian Semiconductor Equipment Associates, Inc. Apparatus and techniques to treat substrates using directional plasma and point of use chemistry
US9761414B2 (en) * 2015-10-08 2017-09-12 Lam Research Corporation Uniformity control circuit for use within an impedance matching circuit
US10879044B2 (en) * 2017-04-07 2020-12-29 Lam Research Corporation Auxiliary circuit in RF matching network for frequency tuning assisted dual-level pulsing
US10395894B2 (en) * 2017-08-31 2019-08-27 Lam Research Corporation Systems and methods for achieving peak ion energy enhancement with a low angular spread
US10624178B2 (en) * 2017-11-30 2020-04-14 Lutron Technology Company Llc Multiple location load control system
US10224183B1 (en) * 2018-03-21 2019-03-05 Lam Research Corporation Multi-level parameter and frequency pulsing with a low angular spread

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Publication number Priority date Publication date Assignee Title
JP2009246091A (ja) 2008-03-31 2009-10-22 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法及びコンピュータ読み取り可能な記憶媒体

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Publication number Publication date
US10573494B2 (en) 2020-02-25
JP7571193B2 (ja) 2024-10-22
US11462390B2 (en) 2022-10-04
JP2021518629A (ja) 2021-08-02
WO2019182847A1 (en) 2019-09-26
JP2023096051A (ja) 2023-07-06
US20200176222A1 (en) 2020-06-04
US12068131B2 (en) 2024-08-20
US20230005718A1 (en) 2023-01-05
US20190295820A1 (en) 2019-09-26
US10224183B1 (en) 2019-03-05
KR20200124318A (ko) 2020-11-02

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