JP7282489B2 - 撮像装置およびその制御方法 - Google Patents

撮像装置およびその制御方法 Download PDF

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Publication number
JP7282489B2
JP7282489B2 JP2018158250A JP2018158250A JP7282489B2 JP 7282489 B2 JP7282489 B2 JP 7282489B2 JP 2018158250 A JP2018158250 A JP 2018158250A JP 2018158250 A JP2018158250 A JP 2018158250A JP 7282489 B2 JP7282489 B2 JP 7282489B2
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Japan
Prior art keywords
signal
pixel
capacitance
image signal
image
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JP2018158250A
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English (en)
Japanese (ja)
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JP2020036073A (ja
JP2020036073A5 (https=
Inventor
真一 前田
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2018158250A priority Critical patent/JP7282489B2/ja
Priority to US16/534,501 priority patent/US10999521B2/en
Publication of JP2020036073A publication Critical patent/JP2020036073A/ja
Publication of JP2020036073A5 publication Critical patent/JP2020036073A5/ja
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/72—Combination of two or more compensation controls
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/74—Circuitry for compensating brightness variation in the scene by influencing the scene brightness using illuminating means
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/741—Circuitry for compensating brightness variation in the scene by increasing the dynamic range of the image compared to the dynamic range of the electronic image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/76—Circuitry for compensating brightness variation in the scene by influencing the image signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/532—Control of the integration time by controlling global shutters in CMOS SSIS
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Studio Devices (AREA)
JP2018158250A 2018-08-27 2018-08-27 撮像装置およびその制御方法 Active JP7282489B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2018158250A JP7282489B2 (ja) 2018-08-27 2018-08-27 撮像装置およびその制御方法
US16/534,501 US10999521B2 (en) 2018-08-27 2019-08-07 Imaging device and control method therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018158250A JP7282489B2 (ja) 2018-08-27 2018-08-27 撮像装置およびその制御方法

Publications (3)

Publication Number Publication Date
JP2020036073A JP2020036073A (ja) 2020-03-05
JP2020036073A5 JP2020036073A5 (https=) 2021-09-30
JP7282489B2 true JP7282489B2 (ja) 2023-05-29

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JP2018158250A Active JP7282489B2 (ja) 2018-08-27 2018-08-27 撮像装置およびその制御方法

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US (1) US10999521B2 (https=)
JP (1) JP7282489B2 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11665444B2 (en) 2021-01-04 2023-05-30 Samsung Electronics Co., Ltd. Image sensor, pixel, and method of operating the pixel
US12177576B2 (en) * 2021-02-15 2024-12-24 Dv2Js Innovation Llp. Dynamic range enhancement in CMOS image sensors using charge transfer amplification

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004048561A (ja) 2002-07-15 2004-02-12 Fuji Photo Film Co Ltd 撮像装置及び測光装置
JP2004336565A (ja) 2003-05-09 2004-11-25 Riyuutaro Oi 光電変換装置及びデジタルカメラ
JP2011232658A (ja) 2010-04-28 2011-11-17 Fujifilm Corp Ｃｍｏｓ型固体撮像素子を搭載した撮像装置及びそのプリ発光制御方法並びにフラッシュ発光量調光方法
JP2013074437A (ja) 2011-09-27 2013-04-22 Canon Inc 撮像装置、及びその制御方法
JP2018093301A (ja) 2016-11-30 2018-06-14 キヤノン株式会社 撮像素子及び撮像素子の制御方法
US20180191974A1 (en) 2016-12-30 2018-07-05 Samsung Electronics Co., Ltd. Image sensor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3070300B2 (ja) * 1992-10-19 2000-07-31 株式会社ニコン カメラの測光装置
TWI456990B (zh) * 2011-04-08 2014-10-11 原相科技股份有限公司 高動態範圍影像感測電路及高動態範圍影像讀取方法
JP5791765B2 (ja) 2014-06-25 2015-10-07 キヤノン株式会社 撮像装置及びその制御方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004048561A (ja) 2002-07-15 2004-02-12 Fuji Photo Film Co Ltd 撮像装置及び測光装置
JP2004336565A (ja) 2003-05-09 2004-11-25 Riyuutaro Oi 光電変換装置及びデジタルカメラ
JP2011232658A (ja) 2010-04-28 2011-11-17 Fujifilm Corp Ｃｍｏｓ型固体撮像素子を搭載した撮像装置及びそのプリ発光制御方法並びにフラッシュ発光量調光方法
JP2013074437A (ja) 2011-09-27 2013-04-22 Canon Inc 撮像装置、及びその制御方法
JP2018093301A (ja) 2016-11-30 2018-06-14 キヤノン株式会社 撮像素子及び撮像素子の制御方法
US20180191974A1 (en) 2016-12-30 2018-07-05 Samsung Electronics Co., Ltd. Image sensor

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JP2020036073A (ja) 2020-03-05
US20200068109A1 (en) 2020-02-27
US10999521B2 (en) 2021-05-04

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