JP7270607B2 - Solar cell manufacturing method, solar cell module manufacturing method, and solar cell module - Google Patents

Description

The present invention relates to a method for manufacturing a solar cell, a method for manufacturing a solar cell module, a solar cell, and a solar cell module.

In recent years, when modularizing double-sided electrode type solar cells, there is a method in which parts of the solar cells are overlapped to directly connect them electrically and physically without using conductive connection lines. exists (for example, Patent Document 1).

Such a connection method is called a single ring method. According to this method, more solar cells can be mounted in the limited solar cell mounting area of the solar cell module, and the light-receiving area for photoelectric conversion increases, which improves the output of the solar cell module. It is thought that

JP-A-11-186577

In a method for manufacturing a double-sided electrode type solar cell, a semiconductor laminate is obtained in which a p-type semiconductor layer and an n-type semiconductor layer are formed on both main surfaces of a semiconductor substrate, respectively, and transparent electrodes are provided on both main surfaces of the semiconductor laminate. layer, forming a metal electrode layer.
Generally, a physical vapor deposition method (PVD method) such as a sputtering method is used as a method for forming the transparent electrode layer. In this case, patterning is performed using a mask when forming the transparent electrode layer on one of the principal surfaces so that the transparent electrode layers on both principal surfaces of the semiconductor laminate are not short-circuited.

However, the inventors of the present application have found that in patterning using a mask during film formation, the film formation is hindered by the mask, and the film thickness of the transparent electrode layer at the edge of the solar cell near the mask is reduced to the central portion of the solar cell. We have obtained the knowledge that the film thickness becomes thinner than the film thickness of the As a result, it is expected that the resistance of the transparent electrode layer at the edge of the solar cell will increase and the output of the solar cell will decrease.

The present invention provides a method for manufacturing a solar cell, a method for manufacturing a solar cell module, a solar cell, and a solar cell module that can suppress a decrease in output when a solar cell module is formed using the shingling method. With the goal.

A method for manufacturing a solar cell according to the present invention is a solar cell module including at least one solar cell string in which at least two rectangular double-sided electrode type solar cells are electrically connected using a shingling method. A method for manufacturing a solar cell used in the above, wherein a transparent electrode layer forming step for forming a transparent electrode layer on both main surfaces of a semiconductor laminate, wherein one of the main surfaces has a transparent electrode on the side of one main surface When forming the layers, a mask is placed on one main surface side of the long-side region that will be the long-side portion of the solar cell and the short-side region that will be the short-side portion of the solar cell, and the mask will be placed in the direction intersecting the long side region. and a transparent electrode layer forming step of forming a transparent electrode layer by a physical vapor deposition method while conveying the semiconductor laminate in the conveying direction.

A method for manufacturing a solar cell module according to the present invention is a solar cell module including at least one solar cell string in which at least two rectangular double-sided electrode type solar cells are electrically connected using a shingling method. The method for manufacturing a solar cell is the method for manufacturing a solar cell described above, wherein the solar cell A mask is placed on one main surface side of the long-side region that will be the long-side portion of the cell and the short-side region that will be the short-side portion of the solar cell, and the semiconductor laminate will be transported with the direction intersecting the long-side region as the transport direction. while the front side in the transport direction of one of the adjacent solar cells manufactured by a solar cell manufacturing method including a transparent electrode layer forming step of forming a transparent electrode layer by physical vapor deposition. A portion of one main surface of the long side portion of the other main surface side opposite to the one main surface side of the long side portion on the rear side in the conveying direction of the other of the adjacent solar cells A solar cell string forming step is included in which adjacent solar cells are connected to each other by overlapping under a portion.

A solar cell according to the present invention is used in a solar cell module including at least one solar cell string in which at least two rectangular double-sided electrode type solar cells are electrically connected using a shingling method. , a solar cell comprising a semiconductor laminate and a transparent electrode layer formed on both main surfaces of the semiconductor laminate, wherein one of the main surfaces of the semiconductor laminate has a long side portion of the solar battery cell The width of the weakened region at the end of the transparent electrode layer on the long side of the other end of the solar battery cell The reduced region is a region in which the thickness of the transparent electrode layer at the end portion is smaller than the width of the region, and the thickness of the transparent electrode layer is reduced compared to the thickness at the central portion of the transparent electrode layer.

A solar cell module according to the present invention is a solar cell module including at least one solar cell string in which at least two rectangular double-sided electrode type solar cells are electrically connected using a shingling method. , the solar cell is the above solar cell, comprising a semiconductor laminate and a transparent electrode layer formed on both main surfaces of the semiconductor laminate; The width of the recessed region at the end of the transparent electrode layer on the long side of the other end of the solar cell is equal to the width of the recessed region on the long side of the long side of the solar cell. A portion of the long side portion on the one end side of one of the adjacent solar cells, which is smaller than the width of the recessed region at the end portion of the electrode layer and on the one main surface side of the adjacent solar cell It is connected under a portion of the other main surface side opposite to the one main surface side of the long side portion on the other end side of the other solar battery cell.

ADVANTAGE OF THE INVENTION According to this invention, the output reduction of a solar cell can be suppressed at the time of solar cell module-ization using a shingling method.

It is a figure which shows the transparent electrode layer formation process and cutting process in the manufacturing method of the conventional solar cell. It is a figure which shows the transparent electrode layer formation process using the PVD method in the manufacturing method of the conventional solar cell. It is a figure which shows the transparent electrode layer formation process using the PVD method in the manufacturing method of the conventional solar cell. It is a side view which shows the solar cell module which concerns on this embodiment. It is the figure which looked at the photovoltaic cell which concerns on this embodiment from the light-receiving surface side. FIG. 6 is a sectional view taken along the line VI-VI shown in FIG. 5; 7 is an enlarged view of a region A of the semiconductor laminate 10 shown in FIG. 6; FIG. It is a figure which shows the transparent electrode layer formation process in the manufacturing method of the photovoltaic cell which concerns on this embodiment. It is a figure which shows the photovoltaic cell cutting formation process in the manufacturing method of the photovoltaic cell which concerns on this embodiment. It is a figure which shows the photovoltaic cell cutting formation process in the manufacturing method of the photovoltaic cell which concerns on this embodiment. It is a figure which shows the photovoltaic cell cutting formation process in the manufacturing method of the photovoltaic cell which concerns on this embodiment. FIG. 4 is a diagram showing an example of superimposition of solar cells; FIG. 4 is a diagram showing another example of superimposition of solar cells; 9 is an enlarged view of region B in FIG. 8 when the transport direction in the transparent electrode layer forming step is the upward direction (+Y direction); FIG. 9 is an enlarged view of region B in FIG. 8 when the transport direction in the transparent electrode layer forming step is the right direction (−X direction); FIG. 9 is an enlarged view of region B in FIG. 8 when the transport direction in the transparent electrode layer forming step is the left direction (+X direction); FIG. FIG. 13B illustrates a table showing the width and area of the 50% thickness reduction region at the edge of the transparent electrode layer in FIGS. 13A-13B. It is a figure for demonstrating the film-thickness 50% decline area|region.

An embodiment of the present invention is described below, but the present invention is not limited to this. For the sake of convenience, hatching, member numbers, etc. may be omitted, but in such cases, other drawings shall be referred to. Also, the dimensions of various members in the drawings are adjusted for convenience and ease of viewing.

As described above, the PVD method is generally used as a method for forming a transparent electrode layer in a double-sided electrode type solar cell. In this case, patterning is performed using a mask when forming the transparent electrode layer on one of the principal surfaces so that the transparent electrode layers on both principal surfaces of the semiconductor laminate are not short-circuited.

By the way, in the method of manufacturing a solar cell used in a single-ring solar cell module, as shown in FIG. A plurality of rectangular solar cells may be obtained by laser cutting along cutting lines CL on the region where the transparent electrode layer 20X is formed.
In this case, when laser cutting is performed along the cutting line CL on the formation region of the transparent electrode layer 20X, the transparent electrode layer 20X is cut on the cut surface of the semiconductor stack 10X, particularly on the cut surface of the semiconductor substrate (photoelectric conversion substrate). It adheres and the performance of the solar battery cell deteriorates.
Regarding this point, it is conceivable not to form the transparent electrode in the vicinity of the cutting line CL (for example, see FIG. 9 described later). As a method for forming such a transparent electrode layer, patterning using a mask during film formation, patterning using etching after film formation, or the like can be considered. Patterning using etching after film formation increases manufacturing time and manufacturing costs due to an increase in the number of manufacturing processes.
Thus, from the viewpoint of suppressing performance degradation of the solar cell due to laser cutting, it is preferable to perform patterning using a mask when forming the transparent electrode layer on one of the main surfaces (for example, (see Fig. 8 of ).

However, as described above, the inventors of the present application found that in patterning using a mask during film formation, the film formation is hindered by the mask, and the film thickness of the transparent electrode layer at the end of the solar cell near the mask increases. We have obtained the knowledge that the film thickness becomes thinner than the film thickness at the central portion of the battery cell. As a result, it is expected that the resistance of the transparent electrode layer at the edge of the solar cell will increase and the output of the solar cell will decrease.

As shown in FIGS. 2 and 3, the inventors of the present application have found that the transport direction TD of the semiconductor laminate 10X in the PVD method and the film thickness of the end portion of the transparent electrode layer 20X near the mask MASK are equal to the center of the transparent electrode layer 20X. The relationship between the reduced regions R1 and R2 that are reduced (reduced) relative to the film thickness of the portion was found.
As shown in FIG. 2, when the semiconductor stacked body 10X mounted on the tray TRAY and having the mask MASK arranged on one main surface side of the end is transported in the transport direction TD, the opening of the mask MASK is exposed. A transparent electrode layer 20X is formed on the semiconductor laminate 10X.
In this case, as shown in FIG. 3, the width W2 of the attenuation region R2 at the end of the transparent electrode layer 20X on the rear side in the transport direction TD is equal to the width W2 of the attenuation region R1 at the end of the transparent electrode layer 20X on the front side in the transport direction TD. (and the widths of the reduced regions on the right and left sides in the transport direction TD: details will be described later). The widths W1 and W2 of the attenuation regions are the lengths of the attenuation regions in the direction intersecting the end (side) of the transparent electrode layer 20X and the end (side) of the semiconductor stack 10X.
In other words, the attenuation angle θ2 of the attenuation region R2 at the end of the transparent electrode layer 20X on the rear side in the transport direction TD is greater than the attenuation angle θ1 of the attenuation region R1 at the end of the transparent electrode layer 20X on the front side in the transport direction TD. is also big. The attenuation angles θ1 and θ2 are the angles of inclination of the surface of the attenuation region of the transparent electrode layer 20X with respect to the main surface of the semiconductor laminate 10X, in other words, the surface parallel to the main surface of the semiconductor laminate 10X (flatness of the transparent electrode layer 20X). line extending from the surface of the part) is the inclination angle of the attenuation of the transparent electrode layer 20X.

Therefore, the inventors of the present application have proposed a method for manufacturing a solar cell such that the long side of the solar cell is positioned behind the transport direction TD where the width W2 of the recessed region R2 at the end of the transparent electrode layer is small. found to do.
As a result, the total area of the weakened regions at the ends (four sides) of the transparent electrode layer in the solar cell is reduced, and an increase in the resistance of the transparent electrode layer at the ends of the solar cell is suppressed. As a result, a decrease in the output of the solar cell is suppressed.

Further, the inventors of the present application have found that, in a method for manufacturing a solar cell module, when forming a solar cell string in which the solar cells are electrically connected using a shingling method, one of the adjacent solar cells The front end in the transport direction TD where the width W1 of the weakened region R1 of the transparent electrode layer in the cell is large is the rear end in the transport direction TD where the width W2 of the weakened region R2 of the transparent electrode layer in the other solar cell is small. We have found that adjacent solar cells are superimposed so that they are under the part.
In this way, the front end in the transport direction TD in which the width W1 of the weakened region R1 of the transparent electrode layer in one solar cell is large, and the width W2 of the weakened region R2 of the transparent electrode layer in the other solar cell is small. By arranging in the light-shielding region by the end portion on the rear side in the transport direction TD, a decrease in the output of the photovoltaic cell is suppressed.
Hereinafter, the solar battery module, the solar battery cell, the method for manufacturing the solar battery module, and the method for manufacturing the solar battery cell according to the present embodiment will be described in detail.

(solar cell module)
FIG. 4 is a side view showing the solar cell module according to this embodiment. As shown in FIG. 1, a solar cell module 100 includes at least one solar cell string 2 that electrically connects at least two rectangular double-sided electrode type solar cells 1 using a shingling method. .

The solar cells 1 are connected in series. Specifically, part of one surface side (for example, light receiving surface side) of the long side portion on one end side in the X direction (+X direction) of one of the adjacent solar cells 1, 1 overlaps under part of the other surface side (for example, the back surface side) of the other end of the long side of the other solar cell 1 in the direction opposite to the X direction (−X direction). A busbar electrode (described later) extending in the Y direction is formed on a portion of the light receiving surface side on one end side of the solar cell 1 and a portion of the back surface side on the other end side of the solar cell 1 . The busbar electrode on the light-receiving surface side on one end side of one solar cell 1 is attached to the back surface side on the other end side of the other solar cell 1 via, for example, a conductive adhesive 8 (see FIG. 6 for details). It is electrically connected with the busbar electrode.
In this way, the plurality of solar cells 1 form a stacked structure in which the plurality of solar cells 1 are evenly aligned and tilted in a certain direction like a roof tiled, so the solar cells 1 are electrically connected in this way. The method is called the shingling method. A plurality of solar cells 1 connected in a string is called a solar cell string.
Hereinafter, a region where adjacent solar cells 1, 1 overlap is referred to as overlapping region Ro.

Photovoltaic cell 1 is sandwiched between light-receiving side protective member 3 and back side protective member 4 . A liquid or solid sealing material 5 is filled between the light-receiving side protective member 3 and the back side protective member 4 to seal the solar cells 1 .

In addition, as the conductive adhesive 8, for example, a conductive adhesive paste can be used. Such a conductive adhesive paste is, for example, a paste-like adhesive in which conductive particles are dispersed in a thermosetting adhesive resin material such as epoxy resin, acrylic resin, or urethane resin. However, it is not limited to this, and for example, a conductive adhesive film or an anisotropic conductive film formed in a film form by dispersing conductive particles in a thermosetting adhesive resin material may be used. do not have.

The sealing material 5 seals and protects the solar cell 1 , and is between the light-receiving-side surface of the solar cell 1 and the light-receiving-side protective member 3 and between the back surface of the solar cell 1 . It is interposed between the back side protection member 4 and the back side protection member 4 .
The shape of the sealing material 5 is not particularly limited, and may be, for example, a sheet shape. This is because the sheet form facilitates covering the front and back surfaces of a planar solar cell.
The material of the encapsulant 5 is not particularly limited, but preferably has a property of transmitting light (translucency). Moreover, it is preferable that the material of the encapsulant 5 has adhesiveness to bond the photovoltaic cell 1 , the light-receiving side protective member 3 , and the back side protective member 4 .
Examples of such materials include ethylene/vinyl acetate copolymer (EVA), ethylene/α-olefin copolymer, ethylene/vinyl acetate/triallyl isocyanurate (EVAT), polyvinyl butyrate (PVB), acrylic Translucent resins such as resins, urethane resins, and silicone resins can be used.

The light-receiving-side protective member 3 covers the surface (light-receiving surface) of the solar cell 1 via the encapsulant 5 to protect the solar cell 1 .
The shape of the light-receiving-side protective member 3 is not particularly limited, but a plate-like or sheet-like shape is preferable from the point of indirectly covering the planar light-receiving surface.
Although the material of the light-receiving side protective member 3 is not particularly limited, it is preferable to use a material that has translucency and is resistant to ultraviolet light, similar to the sealing material 5. For example, glass, or Transparent resins such as acrylic resins and polycarbonate resins can be used. Further, the surface of the light-receiving-side protective member 3 may be processed into an uneven shape, or may be coated with an antireflection coating layer. This is because the light-receiving-side protective member 3 having such a configuration makes it difficult to reflect the received light, and guides more light to the solar battery cell 1 .

The back side protection member 4 covers the back side of the solar cell 1 via the encapsulant 5 to protect the solar cell 1 .
The shape of the back side protection member 4 is not particularly limited, but like the light receiving side protection member 3, it is preferably plate-like or sheet-like in that it indirectly covers the planar back side.
Although the material for the back side protection member 4 is not particularly limited, a material that prevents the infiltration of water or the like (highly impervious to water) is preferable. Examples thereof include laminates of resin films such as polyethylene terephthalate (PET), polyethylene (PE), olefin resins, fluorine-containing resins, or silicone-containing resins, and metal foils such as aluminum foil.
The solar battery cell 1 will be described in detail below.

(solar battery cell)
5 is a view of the photovoltaic cell according to this embodiment as seen from the light receiving surface side, and FIG. 6 is a sectional view taken along the line VI-VI shown in FIG. The solar cell 1 shown in FIGS. 5 and 6 is a rectangular double-sided electrode type solar cell. The solar cell 1 includes a semiconductor laminate 10 having two main surfaces, a transparent electrode layer 20 formed on substantially the entire surface of one of the main surfaces of the semiconductor laminate 10 (for example, the light receiving surface side), A metal electrode layer 21 formed on the transparent electrode layer 20, a transparent electrode layer 30 formed on substantially the entire surface of the other surface side (for example, the back surface side) of the main surface of the semiconductor laminate 10, and the transparent electrode layer 30 and a metal electrode layer 31 formed thereon.

FIG. 7 is an enlarged view of region A of semiconductor laminate 10 shown in FIG. As shown in FIG. 7, the semiconductor laminate 10 includes a semiconductor substrate (photoelectric conversion substrate) 110 having two main surfaces, and one of the main surfaces of the semiconductor substrate 110 (for example, the light receiving surface side). passivation layer 120 and first conductivity type semiconductor layer 121, and passivation layer 130 and second conductivity type semiconductor layer 131 laminated in order on the other side (for example, the back side) of the main surface of semiconductor substrate 110. have.

<Semiconductor substrate>
As the semiconductor substrate 110, a conductivity type single crystal silicon substrate such as an n-type single crystal silicon substrate or a p-type single crystal silicon substrate is used. This realizes high photoelectric conversion efficiency.
Semiconductor substrate 110 is preferably an n-type single crystal silicon substrate. This prolongs the lifetime of carriers in the crystalline silicon substrate. This is because, in a p-type single crystal silicon substrate, LID (Light Induced Degradation), which is a recombination center, may occur due to the influence of B (boron), which is a p-type dopant, due to light irradiation. This is to further suppress LID in the substrate.

The semiconductor substrate 110 has a pyramid-shaped fine uneven structure called a texture structure on the back surface side. As a result, the recovery efficiency of the light that has passed through the semiconductor substrate 110 without being absorbed increases.
In addition, the semiconductor substrate 110 may have a pyramid-shaped fine uneven structure called a texture structure on the light receiving surface side. As a result, the reflection of incident light on the light receiving surface is reduced, and the light confinement effect in the semiconductor substrate 11 is improved.

The thickness of the semiconductor substrate 110 is preferably 50 μm or more and 250 μm or less, more preferably 60 μm or more and 230 μm or less, and even more preferably 70 μm or more and 210 μm or less. This reduces material costs.
As the semiconductor substrate 110, a conductive polycrystalline silicon substrate such as an n-type polycrystalline silicon substrate or a p-type polycrystalline silicon substrate may be used. In this case, solar cells are manufactured at a lower cost.

<First conductivity type semiconductor layer and second conductivity type semiconductor layer>
The first-conductivity-type semiconductor layer 121 is formed over substantially the entire light-receiving surface side of the semiconductor substrate 110 with the passivation layer 120 interposed therebetween, and the second-conductivity-type semiconductor layer 131 is formed over substantially the entire back surface side of the semiconductor substrate 110 . It is formed through the passivation layer 130 .

The first-conductivity-type semiconductor layer 121 is formed of a first-conductivity-type silicon-based layer, for example, a p-type silicon-based layer. The second conductivity type semiconductor layer 131 is formed of a silicon-based layer of a second conductivity type different from the first conductivity type, such as an n-type silicon-based layer. The first conductivity type semiconductor layer 121 may be an n-type silicon-based layer, and the second conductivity-type semiconductor layer 131 may be a p-type silicon-based layer.
The p-type silicon-based layer and the n-type silicon-based layer are formed of an amorphous silicon layer or a microcrystalline silicon layer containing amorphous silicon and crystalline silicon. B (boron) is preferably used as the dopant impurity for the p-type silicon-based layer, and P (phosphorus) is preferably used as the dopant impurity for the n-type silicon-based layer.

<Passivation layer>
Passivation layers 120 and 130 are formed of intrinsic silicon-based layers. The passivation layers 120 and 130 function as passivation layers to suppress recombination of carriers.

<Transparent electrode layer>
Description will be made with reference to FIGS. 5 and 6 again. The transparent electrode layer 20 is formed on substantially the entire light-receiving surface side of the semiconductor laminated body 10 , and the transparent electrode layer 30 is formed substantially on the rear surface side of the semiconductor laminated body 10 .
The transparent electrode layers 20 and 30 are made of a transparent conductive material. As the transparent conductive material, transparent conductive metal oxides such as indium oxide, tin oxide, zinc oxide, titanium oxide and composite oxides thereof are used. Among these, an indium-based composite oxide containing indium oxide as a main component is preferable. Indium oxide is particularly preferred from the viewpoint of high electrical conductivity and transparency. Additionally, dopants are preferably added to the indium oxide to ensure reliability or higher conductivity. Dopants include Sn, W, Zn, Ti, Ce, Zr, Mo, Al, Ga, Ge, As, Si, or S, for example.

The transparent electrode layer 30 is formed by an in-line PVD method that does not use a mask, and the transparent electrode layer 20 is formed by an in-line PVD method that uses a mask. In the transparent electrode layer 20, on the light-receiving surface side of the semiconductor laminate 10, a mask is placed on the long-side region RL that becomes the long-side portion of the solar cell 1 and the short-side region RS that becomes the short-side portion of the solar cell, It is formed by the PVD method while transporting the semiconductor stacked body 10 with the X direction crossing the long side regions RL as the transport direction (details will be described later).
As a result, a reduced region is formed in which the film thickness of the end portions (four side portions) of the transparent electrode layer 20 near the mask is reduced from the film thickness of the central portion of the transparent electrode layer 20 . The width W2 of the attenuation region R2 at the end of the transparent electrode layer 20 on the rear side in the X direction (transportation direction) is the width W1 of the attenuation region R1 at the end of the transparent electrode layer 20 on the front side in the X direction (transportation direction) { and the width of the recessed regions at the ends of the transparent electrode layer 20 on the right and left sides in the X direction (both ends in the direction crossing the conveying direction); In other words, the width W2 of the recessed region R2 at the end of the transparent electrode layer 20 on the other long side of the long side of the solar cell is equal to the width W2 of the transparent electrode layer 20 on the long side on the one end. (and the width of the recessed region at the end of the transparent electrode layer 20 on the short side).
Note that the reduced region is a region where the thickness of the end portions of the transparent electrode layer 20 is reduced compared to the thickness of the central portion of the transparent electrode layer 20, and the widths W1 and W2 of the reduced regions 20 and the length of the recessed region in the direction intersecting the end (side) of the semiconductor stack 10 .

In addition, the attenuation angle θ2 of the attenuation region R2 at the end of the transparent electrode layer 20 on the rear side in the X direction (transportation direction) is the same as that of the attenuation region R1 at the end of the transparent electrode layer 20 on the front side in the X direction (transportation direction). larger than the attenuation angle θ1 {and the attenuation angle of the attenuation regions at the ends of the transparent electrode layer 20 on the right and left sides in the X direction (both ends in the direction crossing the transport direction)}. In other words, the attenuation angle θ2 of the attenuation region R2 at the end of the transparent electrode layer 20 on the other end side of the solar cell is equal to that of the transparent electrode layer 20 on the other end side of the solar cell. It is larger than the attenuation angle θ1 of the edge attenuation region R1 (and the attenuation angle of the edge attenuation region of the transparent electrode layer 20 on the short side).
The attenuation angles θ1 and θ2 are the angles of inclination of the surface of the attenuation region of the transparent electrode layer 20 with respect to the main surface of the semiconductor laminate 10, in other words, the surface parallel to the main surface of the semiconductor laminate 10 (the surface of the transparent electrode). line extending from the surface of the flat portion)).

It is preferable that the long-side region RL where the transparent electrode layer 20 is not formed by the mask and the reduced regions R1 and R2 where the thickness of the transparent electrode layer 20 is reduced are included in the overlapping region Ro described above.

A metal electrode layer 21 is formed on the transparent electrode layer 20 and a metal electrode layer 31 is formed on the transparent electrode layer 30 .
The metal electrode layers 21 and 31 are made of a metal material. For example, Cu, Ag, Al, and alloys thereof are used as the metal material.

The metal electrode layer 21 has a so-called comb shape, and includes a plurality of finger electrode portions 21f corresponding to comb teeth and busbar electrode portions 21b corresponding to support portions of the comb teeth. The busbar electrode portion 21b extends along a partial overlap region Ro on the light receiving surface side (one main surface side) on one end side in the X direction (front side in the transport direction), particularly along the long side region RL on the front side in the transport direction. It extends in the Y direction along the decay region R1. The finger electrode portions 21f extend from the busbar electrode portions 21b in the X direction intersecting the Y direction.

The metal electrode layer 31 is formed, for example, on the back side. Like the metal electrode layer 21, the metal electrode layer 31 has a comb shape. That is, the metal electrode layer 31 has a plurality of finger electrode portions 31f corresponding to comb teeth and busbar electrode portions 31b corresponding to support portions of the comb teeth. The busbar electrode portion 31b extends in the Y direction along a partial overlap region Ro on the back side (the other main surface side) of the other end side (rear side in the transport direction) in the X direction. The finger electrode portions 31f extend from the busbar electrode portions 31b in the X direction intersecting the Y direction. The metal electrode layer 31 is not limited to a comb shape, and may be formed in a rectangular shape on substantially the entire rear surface side of the solar cell 1, for example.
In addition, on the overlapping region Ro of the metal electrode layer 31 (for example, the busbar electrode portion 31b of the metal electrode layer 31), the conductive adhesive 8 for fabricating the solar cell string described above is provided. The conductive adhesive 8 is applied to the overlapping region Ro of the metal electrode layer 21 on the light receiving surface side (for example, the busbar electrode portion 21b of the metal electrode layer 21) instead of the overlapping region Ro of the metal electrode layer 31 on the back surface side. ) may be provided on the

(Manufacturing method of solar cell)
Next, a method for manufacturing a solar cell according to this embodiment will be described with reference to FIGS. 5-7 and 8-11. FIG. 8 is a view showing a transparent electrode layer forming step in the method for manufacturing a solar cell according to this embodiment, and FIGS. It is a figure which shows a process.

First, a passivation layer (eg, intrinsic silicon-based layer) 120 is deposited over substantially the entire light-receiving surface side of a semiconductor substrate (eg, n-type single crystal silicon substrate) 110 (see FIG. 7). Also, a passivation layer (for example, an intrinsic silicon-based layer) 130 is laminated on substantially the entire back surface side of the semiconductor substrate 110 (see FIG. 7).
After that, a first conductivity type semiconductor layer (for example, a p-type silicon layer) 121 is laminated on the passivation layer 120, that is, on substantially the entire light receiving surface side of the semiconductor substrate 110 (see FIG. 7). Also, a second conductivity type semiconductor layer (for example, an n-type silicon-based layer) 131 is stacked on the passivation layer 130, that is, on substantially the entire rear surface side of the semiconductor substrate 110 (see FIG. 7).

Although the method for forming the passivation layers 120 and 130, the first conductivity type semiconductor layer 121 and the second conductivity type semiconductor layer 131 is not particularly limited, it is preferable to use the plasma CVD method. As conditions for film formation by the plasma CVD method, for example, a substrate temperature of 100 to 300° C., a pressure of 20 to 2600 Pa, and a high frequency power density of 0.004 to 0.8 W/cm ² are suitably used. Silicon-containing gases such as SiH ₄ and Si ₂ H ₆ , or mixed gases of silicon-based gases and H ₂ are preferably used as material gases.
As the dopant addition gas for the first conductivity type semiconductor layer 121, for example, hydrogen-diluted B ₂ H ₆ is preferably used. As the dopant addition gas for the second conductivity type semiconductor layer 131, for example, hydrogen-diluted _PH3 is preferably used.
Also, in order to improve the light transmittance, a small amount of impurity such as oxygen or carbon may be added. In that case, for example, a gas such as CO ₂ or CH ₄ is introduced during CVD film formation.
According to the film formation using the plasma CVD method, the film quality can be relatively easily controlled by changing the film formation conditions, and thus the refractive index can be easily adjusted.
Through the above steps, the semiconductor laminate 10 is obtained.

Next, as shown in FIG. 8 , the transparent electrode layer 20 is laminated on the first conductivity type semiconductor layer 121 , that is, substantially all over the light receiving surface side of the semiconductor laminate 10 .
As a method for forming the transparent electrode layer 20, a physical vapor deposition method (PVD) such as a sputtering method is used. At that time, a mask MASK is arranged so as to cover the light-receiving surface side of the long-side region RL to be the long-side portion of the solar cell 1 and the short-side region RS to be the short-side portion of the solar cell 1, The transparent electrode layer 20 is formed on the light-receiving surface side of the semiconductor laminated body 10 while the semiconductor laminated body 10 is being conveyed with the X direction intersecting with the long-side region RL as the conveying direction TD (transparent electrode layer forming step).

Next, the transparent electrode layer 30 is laminated on the second conductivity type semiconductor layer 131 , that is, on substantially the entire rear surface side of the semiconductor laminate 10 .
As a method for forming the transparent electrode layer 30, a physical vapor deposition method (PVD) such as a sputtering method is used. At this time, the transparent electrode layer 30 is formed on the back side of the semiconductor laminate 10 while the semiconductor laminate 10 is being transported (transparent electrode layer forming step).

The pressure during film formation by the PVD method is preferably 0.3 Pa or more and 0.6 Pa or less. If the pressure is less than 0.3 Pa, the discharge will not be stable. If the pressure is higher than 0.6 Pa, the decay area is reduced, but the resistance of the transparent electrode layer is increased, resulting in a lower rate.
The conveying speed is preferably 500 mm/min or more and 1500 mm/min or less. When the conveying speed is higher than 1500 mm/min, it becomes necessary to increase the power in the PVD method in order to obtain the required film thickness, but increasing the power reduces the performance of the solar cell. If the conveying speed is less than 500 mm/min, it becomes necessary to lengthen the production line in order to obtain the necessary film thickness.
The width in the transport direction TD of the mask arranged in the long-side region RL cut in the cutting step to be described later is preferably 1.0 mm or more and 1.4 mm or less. 1.0 mm is the processing limit value. When the width of the mask is greater than 1.4 mm, the decay region does not fit within the overlapping region when the solar cell module is formed using the shingling method, and the decrease in the output of the solar cell due to the decay region is suppressed. effect is reduced.

Next, a metal electrode layer 21 is formed on the transparent electrode layer 20 , that is, on the light receiving surface side of the semiconductor laminate 10 . At this time, along a part of the overlap region Ro on one end side in the X direction, particularly along the weakened region R1 along the long side region RL on the front side in the transport direction during film formation of the transparent electrode layer 20, in the Y direction An extending busbar electrode portion 21b is formed.
Also, a metal electrode layer 31 is formed on the transparent electrode layer 30 , that is, on the back side of the semiconductor laminate 10 . At this time, the busbar electrode portion 31b extending in the Y direction is formed along the partial overlap region Ro on the other end side (rear side in the transport direction) in the X direction and on the back side (the other main surface side). .

After that, as shown in FIG. 9 (the metal electrode layer 21 is omitted for convenience), along the cutting line CL in the long side region RL, that is, the transparent electrode layer 20 non-formation region where the transparent electrode layer 20 is not formed is masked by mask MASK. , the semiconductor laminate 10 is cut using a laser. Then, as shown in FIGS. 10 and 11, the semiconductor laminate 10 is separated (the metal electrode layer 21 is omitted for convenience).
Then, the solar battery cell 1 shown in FIGS. 5 and 6 is completed through the above steps.

(Manufacturing method of solar cell module)
Next, a method for manufacturing a solar cell module according to this embodiment will be described.
First, as shown in FIG. 4, at least two rectangular solar cells 1 are electrically connected using a shingling method to obtain a solar cell string 2 (solar cell string forming step). Specifically, a part of the light-receiving surface side of the long side on the front side in the transport direction TD of one of the adjacent solar cells 1, 1 is Adjacent solar cells 1, 1 are connected to each other via a conductive adhesive 8 under a portion of the back side of the long side of the rear side of the TD. By connecting a desired number of solar cells 1 in this manner, a solar cell string 2 including a plurality of solar cells 1 is completed.

Next, the back side protective member 4, the encapsulant 5, at least one solar cell string 2, the encapsulant 5, and the light-receiving side protective member 3 are stacked in this order, and a vacuum evacuation laminator or the like is used. , to seal by heating and pressurizing at a predetermined temperature and pressure.
Through the above steps, the solar cell module 100 shown in FIG. 4 is completed.
Note that the method for manufacturing the solar cell module 100 is not particularly limited.

As described above, according to the method for manufacturing a solar cell according to the present embodiment, when forming the transparent electrode layer 20 on the light receiving surface side of the semiconductor laminate 10 in the transparent electrode layer forming step, the solar cell A mask is placed on the light-receiving surface side of the long-side region RL that becomes the long-side portion of the photovoltaic cell 1 and the short-side region RS that becomes the short-side portion of the solar cell 1, and the X direction that intersects the long-side region RL is defined as the transport direction TD. The transparent electrode layer 20 is formed by the PVD method while transporting the semiconductor laminate 10 .
According to the solar cell 1 manufactured by this manufacturing method, the end of the transparent electrode layer 20 on the other long side of the long side of the solar cell 1 on the light receiving surface side of the semiconductor laminate 10 Width W2 of recessed region R2 at the edge is smaller than width W1 of recessed region R1 at the end of transparent electrode layer 20 at one end of the long side of solar cell 1 .
As a result, the total area of the weakened regions at the ends (four sides) of the transparent electrode layer 20 in the solar cell 1 is reduced, and an increase in the resistance of the transparent electrode layer 20 at the ends of the solar cell 1 is suppressed. As a result, a decrease in the output of the photovoltaic cell 1 is suppressed.
Furthermore, according to the method for manufacturing a solar cell according to the present embodiment, adhesion of the transparent electrode layer 20 to the cut surface of the semiconductor laminate 10, particularly to the cut surface of the semiconductor substrate (photoelectric conversion substrate) during laser cutting is suppressed. It is possible to suppress deterioration in the performance of the solar battery cell 1 .

In addition, according to the method for manufacturing a solar cell module according to the present embodiment, one of the adjacent solar cells 1, 1 on the light receiving surface side of the long side portion on the front side in the transport direction TD of one of the solar cells 1 adjacent solar cells 1, 1 are overlapped under part of the back surface side of the long side on the rear side in the transport direction TD of the other solar cell 1. As shown in FIG.
According to the solar cell module 100 manufactured by this manufacturing method, one of the adjacent solar cells 1, 1 has a long side portion on the one end side of one of the adjacent solar cells 1, which is part of the light-receiving surface side (transparent electrode). The width W1 of the weakened region R1 at the end of the layer 20 is larger) is a part of the back side of the long side of the other end of the other solar cell 1 (the weakened region R2 at the end of the transparent electrode layer 20). (the width W2 of which is smaller)).
In this way, the front end in the transport direction TD where the width W1 of the weakened region R1 of the transparent electrode layer 20 in one solar cell 1 is large corresponds to the weakened region R2 of the transparent electrode layer 20 in the other solar cell 1. By arranging in the light shielding region by the end portion on the rear side in the transport direction TD where the width W2 is small, a decrease in the output of the photovoltaic cell 1 is suppressed.

Here, with reference to FIGS. 13A to 13E, the relationship between the transport direction TD in the transparent electrode layer forming process and the width W of the recessed region at the end of the transparent electrode layer 20 will be verified.
13A is an enlarged view of region B in FIG. 8 when the transport direction TD in the transparent electrode layer forming step is the upward direction (+Y direction), and FIG. 13B is an enlarged view of region B in the transparent electrode layer forming step. FIG. 13C (corresponding to the embodiment described above) is an enlarged view of the area B in FIG. 8 when the right direction (−X direction) is set, and FIG. ) is an enlarged view of region B in FIG. 8 .
FIG. 13D shows the width W1 of the 50% film thickness reduction region R1 (50%) at the end of the transparent electrode layer 20 on the right side of the mask MASK (along the long side region RL serving as the left long side portion of the solar cell). (50%) and area, thickness 50% reduction region R2 (50%) at the end of the transparent electrode layer 20 (along the long side region RL which is the long side portion on the right side of the solar cell) on the left side of the mask MASK Width W2 (50%) and area of , and thickness 50% reduction region R3 ( 50%) width W3 (50%) and area, and the film of the edge of the transparent electrode layer 20 (along the short side region RS that will be the short side of the lower side of the solar cell) under the mask MASK FIG. 10 illustrates a table showing the width W4 (50%) and area of the 50% thickness recession region R4 (50%).
Here, in the above-described embodiment, the thickness of the end portions of the transparent electrode layer 20 shows the decreased regions R1 and R2 in which the thickness of the transparent electrode layer 20 decreases (decreases) compared to the thickness of the central portion of the transparent electrode layer 20, but this verification Then, as shown in FIG. 13E (cross-sectional view), the film thickness of the end portion of the transparent electrode layer 20 is reduced to 50% or less of the film thickness (100%) of the central portion of the transparent electrode layer 20 as the reduction region. ), the film thickness 50% reduction region is considered. As a result, the width W1 (50%) of the 50% thickness reduction region R1 (50%) and the width W2 (50%) of the 50% thickness reduction region R2 (50%) correspond to the edge of the transparent electrode layer 20. is the width in the X direction of the region where the film thickness of the portion is reduced to 50% or less of the film thickness (100%) of the central portion of the transparent electrode layer 20, and the width W3 (50%) of the 50% film thickness reduction region R3 (50%) 50%), and the width W4 (50%) of the 50% thickness reduction region R4 (50%) means that the thickness of the edge portion of the transparent electrode layer 20 is less than the thickness of the central portion of the transparent electrode layer 20 (100% ) is the width in the Y direction of the region that decreases to 50% or less of . Note that the decay region and its width are not limited to this, and for example, the thickness of the end portion of the transparent electrode layer 20 is less than 100% of the thickness (100%) of the central portion of the transparent electrode layer 20, or a predetermined ratio or less. It may be a region and its width that decays (decreases) to .
The table in FIG. 13D also shows the areas in the 50% film thickness reduction regions R1 (50%), R2 (50%), R3 (50%), and R4 (50%). If shadow loss occurs due to the method, the area is set to "0"). Also, the area loss due to attenuation is the rate of decrease in the area of the transparent electrode layer 20 due to attenuation. The area loss due to attenuation is the area ratio of the 50% thickness attenuation regions R1 (50%), R2 (50%), R3 (50%), and R4 (50%) in the area of the transparent electrode layer 20, that is, the following formula expressed.
Area loss=total area of regions R1 (50%), R2 (50%), R3 (50%), and R4 (50%) with thickness reduced by 50%/area of transparent electrode layer 20 The area of the transparent electrode layer 20 is described. In this verification, a square-shaped semiconductor substrate 110 having a side length of 156.75 mm was used, and semiconductor layers 120, 121, 130, and 131 were formed on the semiconductor substrate 110, and the transparent electrode layer 20, After forming 30 and metal electrode layers 21, 31, the substrate was divided into five parts by a laser. In the formation of the transparent electrode layer 20, the long-side region RL corresponding to the long-side portion of the solar cell and corresponding to the end portion of the semiconductor substrate 110 and the short-side region RS forming the short-side portion of the solar cell. Since the mask width of the short side region RS corresponding to the edge of the semiconductor substrate 110 is set to 1.0 mm, the length of the short side of the transparent electrode layer 20 in the rectangular solar cell is ((156.75−2) /5)-1.4=29.55 (mm) (where 1.4 mm is the mask width), and the area of the transparent electrode layer 20 is (156.75-2)×29.55=4752.86 mm ² Become. The transport speed is as shown in the table of FIG. 13D.

As shown in the tables of FIGS. 13A and 13D, when the transport direction TD in the transparent electrode layer forming step is the upward direction (+Y direction), the long side on the left side of the mask MASK (the long side portion on the right side of the photovoltaic cell) Width W2 (50%) of 50% film thickness reduction region R2 (50%) at the end of transparent electrode layer 20 (along region RL), right side of mask MASK (long side portion on left side of solar cell) The width W1 (50%) of the 50% film thickness reduction region R1 (50%) at the end of the transparent electrode layer 20 (along the side region RL), and the upper side of the mask MASK (the upper short side of the solar cell The width W3 (50%) of the 50% thickness reduction region R3 (50%) at the end of the transparent electrode layer 20 is large, and the width W3 (50%) of the lower side of the mask MASK (under the solar cell The width W4 (50%) of the 50% thickness reduction region R4 (50%) at the end of the transparent electrode layer 20 (along the short side region RS serving as the short side portion on the side) is small.
At this time, the overlap region Ro of the long side region RL and the decay region R1 (50%), which is the long side portion on the right side of the cutting line CL, that is, the left side of the solar cell, is the left side of the cutting line CL, that is, the solar cell When superimposed under the long side region RL and the decay region R2 (50%) that become the long side on the right side of the solar cell, the decay region R1 (50%) along the long side region RL that becomes the long side on the left side of the solar cell is covered. On the other hand, the area of the reduced region R2 (50%) along the long side region RL, which is the long side portion on the right side of the solar cell, is as large as 77.4 mm ² . As a result, the area loss due to the total area of the decay regions R1 (50%), R2 (50%), R3 (50%), and R4 (50%) with respect to the total area of the transparent electrode layer 20 in one solar cell is as large as 2.0%.
This is because, as shown in FIG. 12B, the solar cell covering the overlapping region Ro on the left side (long side) where the width W1 (50%) (area) of the weakened region R1 (50%) of the solar cell is large. This is because the width W2 (50%) (area) of the reduced region R2 (50%) on the right side (long side portion) of is also large.

Next, as shown in the tables of FIGS. 13B and 13D, assuming that the transport direction TD in the transparent electrode layer forming step is the right direction (−X direction), the long side portion on the left side of the mask MASK (the long side portion on the right side of the solar cell) width W2 (50%) of the 50% film thickness reduction region R2 (50%) at the end of the transparent electrode layer 20 (along the long side region RL that becomes The width W4 (50%) of the 50% film thickness reduction region R4 (50%) at the end of the transparent electrode layer 20 (along the short side region RS serving as the short side portion) and the width W4 (50%) of the mask MASK (solar cell The width W3 (50%) of the 50% film thickness reduction region R3 (50%) at the end of the transparent electrode layer 20 is large, and the width W3 (50%) on the right side of the mask MASK ( The width W1 (50%) of the 50% thickness reduction region R1 (50%) at the end of the transparent electrode layer 20 (along the long side region RL, which is the left long side portion of the solar cell) is small.
At this time, the overlap region Ro of the long side region RL and the decay region R1 (50%), which is the long side portion on the right side of the cutting line CL, that is, the left side of the solar cell, is the left side of the cutting line CL, that is, the solar cell When superimposed under the long side region RL and the decay region R2 (50%) that become the long side on the right side of the solar cell, the decay region R1 (50%) along the long side region RL that becomes the long side on the left side of the solar cell is covered. On the other hand, the area of the reduced region R2 (50%) along the long side region RL, which is the long side portion on the right side of the solar cell, is as large as 61.9 mm ² . As a result, the area loss due to the total area of the decay regions R1 (50%), R2 (50%), R3 (50%), and R4 (50%) with respect to the total area of the transparent electrode layer 20 in one solar cell is as large as 2.0%.

Next, as shown in the tables of FIGS. 13C and 13D, when the transport direction TD in the transparent electrode layer forming step is the left direction (+X direction) (corresponding to the embodiment described above), the left side of the mask MASK (solar cell The width W2 (50%) of the 50% film thickness reduction region R2 (50%) at the end of the transparent electrode layer 20 (along the long side region RL which is the long side portion on the right side of the cell) is small, and the width W2 (50%) of the right side of the mask MASK Width W1 (50%) of the 50% thickness reduction region R1 (50%) at the end of the transparent electrode layer 20 (along the long side region RL serving as the left long side of the solar cell), under the mask MASK Width W4 (50%) of a 50% film thickness reduction region R4 (50%) at the end of the transparent electrode layer 20 (along the short side region RS serving as the short side portion on the lower side of the solar cell), and , the width W3 (50% ) is large.
At this time, the overlap region Ro of the long side region RL and the decay region R1 (50%), which is the long side portion on the right side of the cutting line CL, that is, the left side of the solar cell, is the left side of the cutting line CL, that is, the solar cell When superimposed under the long side region RL and the decay region R2 (50%) that become the long side on the right side of the solar cell, the decay region R1 (50%) along the long side region RL that becomes the long side on the left side of the solar cell Also, the area of the recession region R2 (50%) along the long side region RL, which is the long side portion on the right side of the solar cell, is relatively small at 15.5 mm ² . As a result, the area loss due to the total area of the decay regions R1 (50%), R2 (50%), R3 (50%), and R4 (50%) with respect to the total area of the transparent electrode layer 20 in one solar cell is as small as 1.0%. In this case, the performance of the solar cell and solar module is expected to improve by 1.1% compared to the case of FIGS. 13A and 13B.
This is because, as shown in FIG. 12A, the width W1 (50%) (area) of the weakened region R1 (50%) of the solar cell covers the overlapping region Ro on the left side (long side). This is because the width W2 (50%) (area) of the reduced region R2 (50%) on the right side (long side portion) of is small.

When the transport speed was set to 600 mm/min, which is 10 times the speed of 60 mm/min, in the transport direction TD as in FIG. 13C, similar results were obtained as shown in the table of FIG. 13D.
As a result, although this verification was performed at a low transport speed of 60 mm/min, it is expected that the same tendency will be obtained even if the transport speed is increased.

Next, consider the size of the mask in the step of forming the transparent electrode layer.
Considering the contact resistance and adhesion between the solar cells and the area loss due to overlapping, the width of the overlapping region Ro is preferably 1.5 mm. Accordingly, as shown in the tables of FIGS. 13C and 13D, in order to overlap all of the reduced regions R1 with a width W1=0.4 mm, the width of the mask on the right side of the cutting line CL is preferably 1.1 mm or less. .
On the other hand, due to physical damage caused by laser cutting, the passivation film does not function within a range of ±0.15 to less than 0.3 mm from the cutting line CL. 3 mm is preferable. This is because, if the transparent electrode layer is laminated within the above range, carriers (holes/electrons) that move to the transparent electrode layer through the vicinity of the passivation film that is functioning and the passivation film that is not functioning are This is because they do not migrate to the metal electrode layer, but migrate to the non-functioning passivation film, and eventually recombine in the semiconductor substrate 110 .
Considering the above, if the width of the mask is set to 1.4 mm or less, all of the attenuation regions R1 can be superimposed, and the attenuation regions R1 are highly effective in suppressing the decrease in the output of the solar cell.
Note that the processing limit of the mask is 1.0 mm. Accordingly, the width of the mask is preferably 1.0 mm or more and 1.4 mm or less.

Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various changes and modifications are possible. For example, in the present embodiment, a heterojunction solar cell and a method for manufacturing the same are illustrated as shown in FIG. It is applied to various solar cells such as solar cells of the type and manufacturing methods thereof.

REFERENCE SIGNS LIST 1 solar battery cell 2 solar battery string 3 light receiving side protective member 4 back side protective member 5 sealing material 8 conductive adhesive 10, 10X semiconductor laminate 20, 20X, 30 transparent electrode layer 21, 31 metal electrode layer 21f, 31f finger Electrode portions 21b, 31b Busbar electrode portion 100 Solar cell module 110 Semiconductor substrate 120, 130 Passivation layer 121 First conductivity type semiconductor layer 131 Second conductivity type semiconductor layer R1, R2, R3, R4 Decay region Ro Overlap region RL Long side Area RS Short side area TD Conveying direction

Claims (10)

A method for manufacturing a solar cell used in a solar cell module including at least one solar cell string in which at least two rectangular double-sided electrode type solar cells are electrically connected using a shingling method. hand,
A transparent electrode layer forming step for forming transparent electrode layers on both main surfaces of a semiconductor laminate,
When forming the transparent electrode layer on one of the two main surfaces, the long-side region that becomes the long-side portion of the solar cell and the short-side region that becomes the short-side portion of the solar cell A transparent electrode layer forming step of forming a transparent electrode layer by a physical vapor deposition method while placing a mask on one main surface side and transporting the semiconductor laminate with the direction intersecting the long side region as the transport direction. fruit,
The conveying speed in the transparent electrode layer forming step is 500 mm/min or more and 1500 mm/min or less.
A method for manufacturing a solar cell. A method for manufacturing a solar cell used in a solar cell module including at least one solar cell string in which at least two rectangular double-sided electrode type solar cells are electrically connected using a shingling method. hand,
A transparent electrode layer forming step for forming transparent electrode layers on both main surfaces of the semiconductor laminate, wherein the transparent electrode layer is formed on one main surface side of the two main surfaces, wherein the length of the solar cell is A mask is placed on the one main surface side of the long-side region that will be the side portion and the short-side region that will be the short-side portion of the solar cell, and the semiconductor laminate will be transported with the direction intersecting the long-side region as the transport direction. Including a transparent electrode layer forming step of forming a transparent electrode layer by a physical vapor deposition method while conveying,
The pressure during film formation by the physical vapor deposition method in the transparent electrode layer forming step is 0.3 Pa or more and 0.6 Pa or less.
A method for manufacturing a solar cell. further comprising cutting the semiconductor laminate in the long side region so as to obtain at least two solar cells from the semiconductor laminate;
The method for manufacturing the solar battery cell according to claim 1 or 2 . forming a bus bar electrode along the long side region on the front side in the conveying direction on the one main surface side of the semiconductor laminate;
4. The step of forming a busbar electrode layer along the long side region on the rear side in the transport direction on the other main surface side of the two main surfaces of the semiconductor laminate, according to any one of claims 1 to 3 . The method for manufacturing the solar battery cell according to any one of 1 . 4. The method of manufacturing a solar cell according to claim 3 , wherein the width in the conveying direction of the mask arranged in the long side regions cut in the cutting step is 1.0 mm or more and 1.4 mm or less. 2. The method for manufacturing a solar cell according to claim 1 , wherein the pressure during film formation by said physical vapor deposition method in said transparent electrode layer forming step is 0.3 Pa or more and 0.6 Pa or less. A method for manufacturing a solar cell module including at least one solar cell string in which at least two rectangular double-sided electrode type solar cells are electrically connected using a shingling method, the method comprising:
When the transparent electrode layer is formed on one of the two main surfaces of the semiconductor laminate , the solar battery cell has a long-side region serving as a long-side portion of the solar battery cell and a short-side region of the solar battery cell. A mask is placed on the one main surface side of the short-side regions to be the side portions, and the transparent electrode layer is formed by physical vapor deposition while transporting the semiconductor laminate with the direction intersecting the long-side regions as the transport direction. Manufactured by a solar cell manufacturing method including a transparent electrode layer forming step to form,
A portion of the one main surface side of the front long side portion in the conveying direction of one of the adjacent solar cells is attached to the conveying direction of the other of the adjacent solar cells. A solar cell string forming step of connecting adjacent solar cells by overlapping under a part of the other main surface side opposite to the one main surface side of the long side portion on the rear side of the direction,
A method for manufacturing a solar cell module. A solar cell module comprising at least one solar cell string in which at least two rectangular double-sided electrode type solar cells are electrically connected using a shingling method,
The photovoltaic cell includes a semiconductor laminate and transparent electrode layers formed on both main surfaces of the semiconductor laminate. The width of the recessed region at the end of the transparent electrode layer on the long side of the other end of the portion is the width of the transparent electrode layer on the long side of the long side of the solar battery cell on the one end. is smaller than the width of the reduced region at the end, the reduced region is a region where the thickness of the end of the transparent electrode layer is reduced compared to the thickness of the central portion of the transparent electrode layer,
The part of the one main surface side of the one end side long side of one of the adjacent solar cells is the other end of the other of the adjacent solar cells. is connected under a portion of the other main surface side opposite to the one main surface side of the long side of the side,
solar module. The solar cell is
a busbar electrode formed on a portion of the one main surface side of the one end side of the semiconductor laminate;
a bus bar electrode formed on a portion of the other main surface of the two main surfaces on the other end side of the semiconductor laminate;
The solar cell module of claim 8, comprising: The receding angle of the receding region of the end of the transparent electrode layer on the long side of the other end of the solar cell is the end of the transparent electrode layer on the long side of the one end of the solar cell. is greater than the decay angle of the decay region of
The attenuation angle is the angle of the surface of the attenuation region of the transparent electrode layer with respect to the main surface of the semiconductor laminate.
The solar cell module according to claim 8 or 9.

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