JP7270131B2 - Method for manufacturing light emitting device - Google Patents

Description

The present invention relates to a method for manufacturing a light emitting device.

Patent Literature 1 discloses a light-emitting device in which a reflective member made of a reflective resin or the like is arranged on the side surface of an LED element. Further improvement in light extraction efficiency is desired in light emitting devices.

JP 2012-227470 A

One embodiment of the present invention provides a method of manufacturing a light emitting device with high light extraction efficiency.

A method for manufacturing a light-emitting device according to one embodiment of the present invention includes a structure including a silicon substrate and a semiconductor laminate including a first surface in contact with the silicon substrate. Forming a layer is included. The manufacturing method includes a step of removing the silicon substrate to expose the first surface of the semiconductor laminate from the resin layer. The manufacturing method includes forming, on the first surface and side surfaces of the resin layer, a reflective film including a first surface-facing region facing the first surface and a side-facing region facing the side surface. include. The manufacturing method includes performing anisotropic etching to remove the first surface facing region of the reflective film and leave at least part of the side facing region of the reflective film. In the step of forming the reflective film, at least part of the side surface of the resin layer is substantially perpendicular to the first surface.

According to one embodiment of the present invention, it is possible to provide a method for manufacturing a light emitting device with high light extraction efficiency.

FIG. 1 is a flow chart diagram illustrating a method for manufacturing a light emitting device according to the first embodiment. FIG. 2 is a schematic cross-sectional view illustrating the method for manufacturing the light emitting device according to the first embodiment. 3A to 3C are schematic cross-sectional views illustrating the method for manufacturing the light emitting device according to the first embodiment. 4A to 4D are schematic cross-sectional views illustrating the method for manufacturing the light emitting device according to the first embodiment. 5A to 5D are schematic cross-sectional views illustrating the method for manufacturing the light emitting device according to the first embodiment. 6A to 6D are schematic cross-sectional views illustrating the method for manufacturing the light emitting device according to the first embodiment. 7A to 7D are schematic cross-sectional views illustrating the method for manufacturing the light emitting device according to the first embodiment. 8A to 8D are schematic cross-sectional views illustrating the method for manufacturing the light emitting device according to the first embodiment. 9A to 9D are schematic cross-sectional views illustrating the method for manufacturing the light emitting device according to the first embodiment. FIG. 10 is a schematic cross-sectional view illustrating part of the light emitting device according to the first embodiment. FIG. 11 is a schematic cross-sectional view illustrating part of the light emitting device according to the first embodiment. FIG. 12 is a schematic cross-sectional view illustrating the light emitting device according to the second embodiment.

Each embodiment of the present invention will be described below with reference to the drawings.
Note that the drawings are schematic or conceptual, and the relationship between the thickness and width of each component, the size ratio between components, and the like are not necessarily the same as the actual ones. Moreover, even when the same configuration is shown, the dimensions and ratios may be different depending on the drawing.
In the specification of the present application, the same reference numerals are assigned to the same elements as those described above with respect to the figures already appearing, and detailed description thereof will be omitted as appropriate.

(First embodiment)
FIG. 1 is a flow chart diagram illustrating a method for manufacturing a light emitting device according to the first embodiment. 2 to 8 are schematic cross-sectional views illustrating the method for manufacturing the light emitting device according to the first embodiment.
As shown in FIG. 1, in the method for manufacturing a light emitting device according to this embodiment, a resin layer is formed on the structure 15 (step S110). For example, in the step of forming the resin layer 30 , the structure 15 as shown in FIG. 2 is prepared and the resin layer 30 is formed around the structure 15 . A structure 15 includes a silicon substrate 10 and a semiconductor stack 20 . The semiconductor laminate 20 includes a first surface 20fa that contacts the silicon substrate 10 . The first surface 20fa faces the silicon substrate 10 . The structure 15 is obtained by using, for example, the silicon substrate 10 as a substrate for growth, and the semiconductor laminate 20 is formed on the silicon substrate 10 . Resin layer 30 includes a side surface 30 s facing the side surface of silicon substrate 10 .

A direction from the semiconductor stack 20 toward the silicon substrate 10 is defined as a first direction D1. Let the first direction D1 be the Z-axis direction. One direction perpendicular to the Z-axis direction is defined as the X-axis direction. A direction perpendicular to the Z-axis direction and the X-axis direction is defined as the Y-axis direction.

The first surface 20fa extends along the XY plane. The first surface 20fa is substantially parallel to the XY plane. Side 30s intersects the XY plane.

As shown in FIG. 2 , the step of forming the resin layer 30 is performed while the structure 15 is fixed to the support member 60 . The support member 60 is, for example, a mounting board for mounting the structure 15 . In this state, the semiconductor laminated body 20 is provided between the supporting member 60 and the silicon substrate 10 . The semiconductor laminate 20 includes a facing surface 20fc that faces the supporting member 60 . The facing surface 20fc is between the first surface 20fa and the support member 60. As shown in FIG. For example, the first element electrode 20E and the second element electrode 20F are provided on the facing surface 20fc of the semiconductor laminate 20. As shown in FIG.

Meanwhile, a first electrode 51 and a second electrode 52 are provided on the surface of the support member 60 . For example, the first electrode 51 and the first element electrode 20E are electrically connected by the first connection member 51C. For example, the second electrode 52 and the second element electrode 20F are electrically connected by the second connection member 52C. A current is supplied to the semiconductor laminate 20 by applying a voltage between the first electrode 51 and the second electrode 52 . As a result, light is emitted from the semiconductor laminate 20 .

The resin layer 30 contains resin and a plurality of particles, for example. There is resin around the plurality of particles. The particles have a function of diffusing light from the semiconductor stack 20 . Particles include, for example, titanium oxide or aluminum oxide. The resin includes, for example, acrylic resin or silicone resin. The resin layer 30 contains, for example, silicone resin and titanium oxide. The reflectance of the resin layer 30 at the peak wavelength of the light emitted from the semiconductor laminate 20 is, for example, higher than the reflectance of the semiconductor laminate 20 at the peak wavelength.

For example, after the structure 15 is mounted on the support member 60, the resin layer 30 is formed by applying resin and curing the resin.

As shown in FIG. 2, part of the resin layer 30 is also formed on the silicon substrate 10 in this example. As shown in FIG. 2, the silicon substrate 10 includes a third surface 10fc and a fourth surface 10fd. The third surface 10fc contacts the first surface 20fa of the semiconductor stack 20 . The third surface 10fc faces the first surface 20fa. The third surface 10fc is between the first surface 20fa and the fourth surface 10fd. The fourth surface 10fd is the surface opposite to the third surface 10fc.

In the example of FIG. 2, for example, the first surface 20fa of the semiconductor laminate 20 is the upper surface of the semiconductor laminate 20. In the example of FIG. For example, the third surface 10fc of the silicon substrate 10 is the bottom surface of the silicon substrate 10 . For example, the fourth surface 10fd of the silicon substrate 10 is the top surface of the silicon substrate 10 .

In the step of forming the resin layer 30 (step S110), the fourth surface 10fd of the silicon substrate 10 may be covered with the resin layer 30 . Resin layer 30 includes a first region 31 . The first region 31 faces the fourth surface 10fd. The first region 31 contacts, for example, the fourth surface 10fd. The first region 31 covers the fourth surface 10fd of the silicon substrate 10, for example. Between the first region 31 and the semiconductor stack 20 is the silicon substrate 10 .

As shown in FIG. 2, in this example, the resin layer 30 further includes a second surface 30fb in addition to the side surface 30s. The second surface 30fb does not overlap the silicon substrate 10 in the first direction D1. The second surface 30fb is adjacent to the first region 31 of the resin layer 30 .

Resin layer 30 having such a configuration is formed in step S110.

As shown in FIG. 1, in the method for manufacturing a light emitting device according to this embodiment, the silicon substrate 10 is removed to expose the first surface 20fa of the semiconductor laminate 20 from the resin layer 30 (step S120).

In this example, as shown in FIG. 3, first, the first region 31 of the resin layer 30 (for example, the portion covering the fourth surface 10fd) is removed. Thereby, the silicon substrate 10 is exposed. In the step of removing the first region 31 of the resin layer 30, the portion including the second surface 30fb of the resin layer 30 is also removed. Such removal of part of the resin layer 30 can be implemented by, for example, grinding (including CMP and the like).

Thereafter, as shown in FIG. 4, the silicon substrate 10 is removed to expose the first surface 20fa. For example, the silicon substrate 10 is removed by RIE or the like. A portion of the first surface 20fa may be removed by removing the silicon substrate 10 .

As shown in FIGS. 3 and 4, in the step of exposing the first surface 20fa (step S120), the first region 31 (the portion covering the fourth surface 10fd) of the resin layer 30 is removed to remove the silicon substrate 10. May include exposing.

As shown in FIG. 1, after this, surface roughening (step S125) may be performed as needed. Surface roughening will be described later.

As shown in FIG. 1, a reflective film is formed (step S130). For example, as shown in FIG. 5, the reflective film 40 is formed on the first surface 20fa and the side surface 30s of the resin layer 30 . The reflective film 40 includes a first surface facing region 40fp and side facing regions 40sp. The first surface facing region 40fp faces the first surface 20fa. The side facing region 40sp faces the side surface 30s of the resin layer 30 .

In this example, the reflective film 40 further includes a second surface facing region 40fq. The second surface facing region 40fq faces the second surface 30fb of the resin layer 30 . For example, the side facing region 40sp is continuous with the first surface facing region 40fp and the second surface facing region 40fq.

The reflective film 40 is formed by, for example, a sputtering method. In one example, the reflective film 40 includes a DBR (Distributed Bragg Reflector). The reflective film 40 may include a metal film. The reflectance of the reflective film 40 with respect to the light from the semiconductor laminate 20 is higher than the reflectance of the resin layer 30 . An example of the reflective film 40 will be described later.

As shown in FIG. 1, anisotropic etching is performed (step S140). As shown in FIG. 6, in step S140, the first surface facing region 40fp of the reflective film 40 is removed. At this time, at least part of the side facing region 40sp of the reflective film 40 is left. In anisotropic etching, for example, an etching gas such as fluorine is used.

If the reflective film 40 includes the second surface facing region 40fq, the second surface facing region 40fq is also removed in step S140.

In the present embodiment, in the step of forming the reflective film (step S130), at least part of the side surface 30s of the resin layer 30 is substantially perpendicular to the first surface 20fa. For example, as shown in FIG. 6, an angle θ2 between at least a portion of the side surface 30s and the first surface 20fa is 80 degrees or more and 100 degrees or less.

This angle θ2 is determined during formation of the resin layer 30 (see FIG. 2). As shown in FIG. 2, the silicon substrate 10 includes a third surface 10fc in contact with the first surface 20fa of the semiconductor stack 20. As shown in FIG. At least a portion of side surface 30s is substantially perpendicular to third surface 10fc of silicon substrate 10 . An angle θ1 between at least part of the side surface 30s and the third surface 10fc of the silicon substrate 10 is 80 degrees or more and 100 degrees or less. Angle θ1 corresponds to angle θ2. The angle θ1 is determined, for example, by a cut surface formed by cutting the silicon substrate 10 . For example, when the silicon substrate 10 is cut and divided into individual pieces, the cross-sectional shape of the silicon substrate 10 is made rectangular. As a result, the side surface 30 s of the resin layer 30 is substantially perpendicular to the upper surface of the resin layer 30 .

At least part of the side surface 30s of the resin layer 30 is substantially perpendicular to the first surface 20fa, so that the first surface facing region 40fp and the second surface facing region 40fp and the second surface facing region are formed in the anisotropic etching (step S140). 40fq is efficiently removed, and the side facing region 40sp tends to remain. Damage to the side facing regions 40sp remaining after anisotropic etching can be suppressed. In the side facing region 40sp of the reflective film 40, it is easy to obtain a high light reflecting property with respect to the light from the semiconductor stacked body 20. FIG. Thereby, a light emitting device with high light extraction efficiency can be manufactured.

In this embodiment, the reflective film 40 formed on the side surface 30s substantially perpendicular to the upper surface of the resin layer 30 is not removed by anisotropic etching, and the surface of the semiconductor stack 20 and the upper surface of the resin layer 30 are not removed. can be selectively removed. As a result, the light from the semiconductor laminate 20 can be efficiently reflected by the reflective film 40 formed on the side surface 30 s of the resin layer 30 . According to this embodiment, a light emitting device having high light extraction efficiency can be efficiently manufactured.

In this embodiment, the resin layer 30 is formed along the outline of the silicon substrate 10 . A side surface 30 s of the resin layer 30 follows the shape of the side surface of the silicon substrate 10 . A reflecting film 40 including a side facing region 40sp facing the side face 30s is formed, and a portion of the reflecting film 40 (excluding the side facing region 40sp) is removed. By forming such a side surface 30s and removing a part of the reflective film 40, the side facing region 40sp can be formed with high accuracy.

For example, when removing part of the reflective film 40, a reference example is conceivable in which a mask or the like is formed and part of the reflective film 40 is removed using the mask. In this reference example, misalignment of the openings of the mask may occur. For this reason, a margin is applied in consideration of the positional deviation, and as a result, there is a limit to miniaturization of the light emitting device. As a result, it becomes difficult to obtain sufficient light reflection characteristics from the reflective film 40 . Furthermore, the number of steps in manufacturing the light-emitting device increases, resulting in an increase in cost.

In contrast, in the present embodiment, at least a portion of the side surface 30s of the resin layer 30 is substantially perpendicular to the first surface 20fa in forming the reflective film (step S130). Therefore, the first surface facing region 40fp and the second surface facing region 40fq can be efficiently removed by anisotropic etching (step S140). Damage to the side facing regions 40sp remaining after anisotropic etching can be suppressed. As a result, high light reflection characteristics are obtained by the highly efficient side facing regions 40sp, and a light emitting device with high light extraction efficiency can be manufactured. Furthermore, the process of manufacturing the light-emitting device is simple, which is advantageous in terms of cost.

In this embodiment, further steps described below may be performed.
As shown in FIG. 1, a wavelength conversion member is formed (step S150). For example, as shown in FIG. 7, the wavelength conversion member 35 is formed after the step of performing anisotropic etching (step S140). The wavelength conversion member 35 is formed in at least part of the region R1 formed by removing the silicon substrate 10 . In the first direction D1, the thickness of the wavelength conversion member 35 is, for example, the same as the thickness of the side-facing region 40sp, or is formed thin enough not to impair the wavelength conversion function. Thereby, the light from the wavelength conversion member 35 is easily reflected by the side facing region 40sp.

The wavelength conversion member 35 includes, for example, multiple wavelength conversion particles (for example, phosphor particles) and resin around the multiple wavelength conversion particles. The resin includes, for example, acrylic resin or silicone resin.

In this embodiment, as shown in FIG. 1, the step of forming the resin member (step S160) may be provided after the step of forming the wavelength conversion member (step S150). As shown in FIG. 7, for example, after the step of forming the wavelength conversion member 35, the resin member 36 is formed in the remaining portion of the region R1 formed by removing the silicon substrate 10. As shown in FIG. The resin member 36 is, for example, translucent resin. The resin member 36 contains, for example, acrylic resin or silicone resin. In this example, the resin member 36 includes a portion facing the second surface 30fb of the resin layer 30 (a portion 36c of the resin layer 30).

As shown in FIG. 1, after the step of forming the resin member (step S160), the portion including the second surface 30fb of the resin layer 30 is removed (step S170). For example, as shown in FIG. 8, a portion 36c (the portion facing the second surface 30fb) of the resin member 36 is removed from the state shown in FIG. Then, in this example, part of the resin member 36 is removed until the side facing region 40sp is exposed. As a result, the resin member is not positioned above the side facing region 40sp, and no light propagates through the resin member. As a result, it is possible to suppress the light spreading in the second direction D2 (see FIG. 2) of the light emitting device and improve the "clearance". The front brightness can be increased. Part of the resin member 36 can be removed by, for example, grinding (including CMP and the like).

Thus, the light emitting device 110 is obtained. In the light emitting device 110, for example, high light extraction efficiency can be obtained due to the side facing region 40sp.

In the light emitting device 110, the length 40t (thickness, see FIG. 12) of the side facing region 40sp along the second direction D2 is, for example, 0.5 μm or more and 3 μm or less. A length 40h (height, see FIG. 12) of the side facing region 40sp along the first direction D1 is, for example, 50 μm or more and 200 μm or less. These numerical values are examples and may be changed as appropriate.

In the manufacturing method according to the present embodiment, the side facing region 40sp of the reflective film 40 does not overlap the semiconductor stacked body 20 in the first direction D1 (Z-axis direction) (see FIG. 6). In the side-facing region 40sp, light from the semiconductor laminate 20 outside the first surface 20fa of the semiconductor laminate 20 in the XY plane is mainly emitted from the first surface 20fa of the semiconductor laminate 20 in the first direction D1. to Since the side-facing regions 40sp are outside the first surface 20fa in the XY plane, the light emitted from the first surface 20fa is not blocked by the side-facing regions 40sp, so that the light can be efficiently emitted from the semiconductor stacked body 20. of light can be extracted.

As shown in FIG. 2, the outer edge of the silicon substrate 10 is preferably outside the outer edge of the semiconductor stack 20 . As shown in FIG. 2, for example, the semiconductor stack 20 includes a first end 20a and a second end 20b. A second direction D2 from the first end 20a to the second end 20b is perpendicular to the first direction D1 (Z-axis direction). The second direction D2 is, for example, the X-axis direction. The silicon substrate 10 includes a third end 10c and a fourth end 10d. The direction from the third end portion 10c to the fourth end portion 10d is along the second direction D2. For example, the direction from the third end 10c to the fourth end 10d is parallel to the second direction D2. In the second direction D2, the first end 20a and the second end 20b are between the third end 10c and the fourth end 10d.

Both ends of the silicon substrate 10 are outside both ends of the semiconductor stack 20, so that light can be efficiently extracted, for example.

Since the outer edge of the silicon substrate 10 is outside the outer edge of the semiconductor laminate 20, for example, when the silicon substrate 10 is removed, the reflective film 40 is formed outside the region where the semiconductor laminate 20 is provided. area can be secured.

As shown in FIG. 1, in the present embodiment, between the step of exposing the first surface 20fa (step S120) and the step of forming the reflective film 40 (step S130), a rough surface is formed on the first surface 20fa. A step of processing (step S125) may be performed.

9A to 9D are schematic cross-sectional views illustrating the method for manufacturing the light emitting device according to the first embodiment.
As shown in FIG. 9, after exposing the first surface 20fa, the first surface 20fa is roughened. As a result, the unevenness 20dp is formed on the first surface 20fa. A height 20h of the unevenness 20dp is, for example, 1 nm or more and 3 nm or less. The height 20h of the unevenness 20dp corresponds to the distance between the top of the unevenness 20dp and the bottom of the unevenness 20dp. This distance is, for example, the distance along the first direction D1.

The unevenness 20dp can be formed by wet etching or dry etching, for example. Roughening corresponds to making the height 20h of the unevenness 20dp after roughening larger than the height 20h of the unevenness 20dp before roughening.

By forming the irregularities 20dp on the first surface 20fa, which is the light exit surface, the light extraction efficiency is further improved.

Examples of the reflective film 40 will be described below.
FIG. 10 is a schematic cross-sectional view illustrating part of the light emitting device according to the first embodiment.
As shown in FIG. 10, the reflective film 40 includes a plurality of first films 41 and a plurality of second films 42 alternately provided. One refractive index of the plurality of first films 41 is different from one refractive index of the plurality of second films 42 . For example, the reflective film 40 includes a plurality of first films 41 and second films 42 . The second film 42 is provided between one of the multiple first films 41 and another one of the multiple first films 41 .

The first film 41 and the second film 42 are, for example, dielectric films. The first film 41 and the second film 42 contain oxide (for example, metal oxide) or the like. For example, the first film 41 contains the first element and oxygen. The second film 42 contains a second element and oxygen. The first element is different from the second element. The reflective film 40 is, for example, a DBR (Distributed Bragg Reflector). Such a configuration provides high reflectance. High stability can be obtained in optical properties. High durability is obtained.

FIG. 11 is a schematic cross-sectional view illustrating part of the light emitting device according to the first embodiment.
As shown in FIG. 11, the reflective film 40 includes a metal film 45 and a dielectric film 46 . The metal film 45 is provided between the dielectric film 46 and the side surface 30 s of the resin layer 30 . The metal film 45 contains, for example, at least one selected from the group consisting of Ag, Al and Rh. The dielectric film 46 contains, for example, silicon oxide. A high reflectance can be obtained even in such a configuration.

(Second embodiment)
The second embodiment relates to a light emitting device.
FIG. 12 is a schematic cross-sectional view illustrating the light emitting device according to the second embodiment.
As shown in FIG. 12, the light emitting device 110 according to the embodiment includes a semiconductor laminate 20, a resin layer 30 and a reflective film 40. As shown in FIG.

The semiconductor laminate 20 includes a first conductivity type first semiconductor layer 21 , a second conductivity type second semiconductor layer 22 , and a light emitting layer 23 . The light emitting layer 23 is provided between the first semiconductor layer 21 and the second semiconductor layer 22 . For example, the first conductivity type is n-type and the second conductivity type is p-type. These semiconductor layers contain, for example, gallium and nitrogen. The semiconductor laminate 20 is made of, for example, a nitride semiconductor.

A direction from the second semiconductor layer 22 toward the first semiconductor layer 21 is defined as a first direction D1. The first direction D1 is, for example, along the Z-axis direction.

The resin layer 30 includes first to sixth partial regions pr1 to pr6. A semiconductor stacked body 20 is provided between the first partial region pr1 and the second partial region pr2 in the second direction D2. The second direction D2 crosses the first direction D1. For example, the second direction D2 crosses the first direction D1. For example, the second direction D2 is perpendicular to the first direction D1. The second direction D2 is, for example, the X-axis direction.

A third partial region pr3 is provided between the first partial region pr1 and the semiconductor stacked body 20 in the second direction D2. A fourth partial region pr4 is provided between the second partial region pr2 and the semiconductor stacked body 20 in the second direction D2. The direction from the first partial region pr1 to the fifth partial region pr5 is along the first direction D1 (Z-axis direction). The direction from the second partial region pr2 to the sixth partial region pr6 is along the first direction D1 (Z-axis direction). The first to sixth partial regions pr1 to pr6 correspond to the first to sixth positions on the resin layer 30, respectively. The first to sixth partial regions pr1 to pr6 are continuous with each other.

The reflective film 40 includes a first region 41p and a second region 42p. The direction from the third partial region pr3 to the first region 41p is along the first direction D1 (Z-axis direction). The direction from the fourth partial region pr4 toward the second region 42p is along the first direction D1.

In the light-emitting device 110 according to the embodiment, the reflecting film 40 is provided, so that the light emitted from the semiconductor stacked body 20 is effectively reflected by the reflecting film 40 . Light extraction efficiency can be improved. According to the embodiment, a highly efficient light emitting device can be provided.

The fifth partial region pr5 includes a first opposing surface 38fa facing the first region 41p. For example, the first opposing surface 38fa extends along the first direction D1. For example, the first opposing surface 38fa is substantially parallel to the first direction D1.

The sixth partial region pr6 includes a second opposing surface 38fb facing the second region 42p. For example, the second facing surface 38fb extends along the first direction D1. For example, the second facing surface 38fb is substantially parallel to the first direction D1.

Formation of the reflective film 40 is easy because the first opposing surface 38fa and the second opposing surface 38fb are aligned in the first direction D1. For example, the surface of the reflective film 40 extends along the first direction D1. Light can be reflected by the reflective film 40 and extracted efficiently.

In the light emitting device 110, the length (thickness) along the second direction D2 of each of the first region 41p and the second region 42p is, for example, 0.5 μm or more and 3 μm or less. The length (height) along the first direction D1 of each of the first region 41p and the second region 42p is, for example, 50 μm or more and 200 μm or less.

As shown in FIG. 12, the light emitting device 110 may further include a wavelength converting member 35. As shown in FIG. The wavelength converting member 35 is between the first region 41p and the second region 42p in the second direction D2.

A resin member 36 may be further provided. A wavelength conversion member 35 is provided between the semiconductor laminate 20 and the resin member 36 in the first direction D1. A support member 60 may be further provided in the light emitting device 110 .

The configuration described with respect to the first embodiment may be applied to the light emitting device 110 according to the second embodiment.

For example, in the light emitting device 110, the length 40t (thickness) along the second direction D2 of the side facing region 40sp is, for example, 0.5 μm or more and 3 μm or less. A length 40h (height) along the first direction D1 of the side facing region 40sp is, for example, 50 μm or more and 200 μm or less.

For example, there is a configuration in which a resin layer containing titanium oxide or the like is provided as a light reflecting member on the side surface of the light emitting element to improve the light extraction efficiency. As the resin layer becomes thicker, the light absorption in the resin layer increases. Furthermore, when a thick resin layer is provided, miniaturization of the light emitting device becomes difficult. On the other hand, if the resin layer is made thinner, the size can be reduced, but light passes through the resin layer and high reflectance cannot be obtained.

In this embodiment, for example, the reflective film 40 is provided on the side surface 30s of the resin layer 30 . The reflective film 40 can be selectively provided with high accuracy. Since the reflective film 40 provides a high reflectance, a light emitting device with high light extraction efficiency can be manufactured even if the resin layer provided on the side surface of the light emitting element is thin. Therefore, according to the present embodiment, it is possible to accurately manufacture a light-emitting device that is miniaturized and has high light extraction efficiency.

According to the embodiments, it is possible to provide a method for manufacturing a highly efficient light emitting device.

In the present specification, "perpendicular" and "parallel" include not only strict perpendicularity and strict parallelism, but also variations in the manufacturing process, for example, and substantially perpendicular or substantially parallel. Good to have.

The embodiments of the present invention have been described above with reference to specific examples. However, the invention is not limited to these specific examples. For example, with respect to specific configurations of semiconductor laminates, resin layers, reflective film members, wavelength conversion members, and the like, which are included in the light-emitting device, those skilled in the art can appropriately select them from the ranges known to those skilled in the art. As long as it can be implemented and the same effect can be obtained, it is included in the scope of the present invention.

Any combination of two or more elements of each specific example within the technically possible range is also included in the scope of the present invention as long as it includes the gist of the present invention.

REFERENCE SIGNS LIST 10 Silicon substrate 10c, 10d Third and fourth ends 10fc Third surface 10fd Fourth surface 15 Structure 20 Semiconductor laminate 20E, 20F First and second elements Electrodes 20a, 20b First and second ends 20dp Unevenness 20fa First surface 20fc Opposite surface 20h Height 21, 22 First and second semiconductor layers 23 Light-emitting layer 30... Resin layer 30fb... Second surface 30s... Side surface 31... First area 35... Wavelength converting member 36... Resin member 36c... Partial 38fa, 38fb... First and second opposing surfaces, 40 Reflective film 40fp, 40fq First and second surface-facing regions 40h, 40t Length 40sp Side-facing regions 41, 42 First and second films 41p, 42p First and second 2 regions 45... Metal film 46... Dielectric film 51, 52... First and second electrodes 51C, 52C... First and second connection members 60... Support members θ1, θ2... Angles 110... Light emitting device D1, D2...first and second directions R1...regions pr1 to pr6...first to sixth partial regions

Claims (9)

forming a resin layer including a side surface facing the silicon substrate around a structure including a silicon substrate and a semiconductor laminate including a first surface in contact with the silicon substrate;
removing the silicon substrate to expose the first surface of the semiconductor laminate from the resin layer;
In the first surface of the semiconductor laminate and the side surface of the resin layer, a first surface facing area facing the first surface of the semiconductor laminate and a side facing area facing the side surface of the resin layer are provided. a step of forming a reflective film comprising
performing anisotropic etching to remove the first surface facing region of the reflective film and leave at least a portion of the side facing region of the reflective film;
After the step of performing the anisotropic etching, a translucent resin member is formed in at least part of the region formed by removing the silicon substrate so as to cover the resin layer and the side facing region. process and
removing a portion of the resin member and a portion of the resin layer to expose the side facing region;
with
The method for manufacturing a light-emitting device, wherein in the step of forming the reflective film, at least part of the side surface of the resin layer is substantially perpendicular to the first surface. the resin layer further includes a second surface that does not overlap the silicon substrate in a first direction from the semiconductor stack toward the silicon substrate;
In the step of forming the reflective film, the reflective film further includes a second surface facing region facing the second surface,
2. The method of manufacturing a light-emitting device according to claim 1, wherein in the step of performing said anisotropic etching, said second surface facing region is further removed. 3. The method of manufacturing a light-emitting device according to claim 2, wherein said side facing region is continuous with said first face facing region and said second face facing region. 4. The method of manufacturing a light-emitting device according to claim 2, wherein said side facing region does not overlap said semiconductor laminate in said first direction. the semiconductor laminate includes a first end and a second end, and a second direction from the first end to the second end is perpendicular to the first direction;
the silicon substrate includes a third end and a fourth end, and a direction from the third end to the fourth end is parallel to the second direction;
Light emission according to any one of claims 2 to 4, wherein in the second direction the first end and the second end are between the third end and the fourth end. Method of manufacturing the device. the silicon substrate includes a third surface and a fourth surface;
the third surface is in contact with the first surface,
the third surface is between the first surface and the fourth surface;
The step of forming the resin layer includes covering the fourth surface with the resin layer,
The resin layer includes a first region covering the fourth surface,
6. The method of manufacturing a light emitting device according to claim 2, wherein the step of exposing the first surface includes removing the first region to expose the silicon substrate. After the step of performing the anisotropic etching and before the step of forming the resin member , the step of forming a wavelength conversion member in at least part of the region formed by removing the silicon substrate. further prepared ,
7. The method of manufacturing a light-emitting device according to claim 1 , wherein said resin member is formed so as to cover said wavelength conversion member . 8. The method according to claim 1, further comprising the step of roughening the first surface between the step of exposing the first surface and the step of forming the reflective film. and a method for manufacturing a light-emitting device. the silicon substrate includes a third surface in contact with the first surface,
6. The method of manufacturing a light-emitting device according to claim 1, wherein at least part of said side surface is substantially perpendicular to said third surface.

Images