JP2015012143A - Semiconductor light emitting device and manufacturing method of the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device and a manufacturing method of the same, which can be achieved in a simple structure and which inhibits light leakage in an edge direction to make light distribution characteristics of a light source be good.SOLUTION: A semiconductor light emitting device (10) comprises: a semiconductor layer (11); electrodes (12, 13) formed on a lower surface side of the semiconductor layer; and a frame-like part (14a) which surrounds an outer edge of the semiconductor layer and has a constant height from a top face of the semiconductor layer in a perpendicular direction to the top face and has a constant width at an upper end part in a direction along the top face. At least a part of the frame-like part is formed in contact with the outer edge of the semiconductor layer.

Description

  The present invention relates to a semiconductor light emitting device using a light emitting diode (LED) and a method for manufacturing the same. In particular, the present invention relates to a semiconductor light emitting device suitably used in a light source device that requires light distribution characteristics and a method for manufacturing the same.

  Light emitting diodes (hereinafter abbreviated as “LEDs”) are used in various application products such as lighting devices, optical communication devices, printers and scanners from the viewpoint of high luminous efficiency, low power consumption and long life. It is adopted as a light source. White LEDs, which are currently mainstream, are based on a combination of a blue LED having a wavelength peak of around 450 nm and a yellow phosphor that converts the blue light into a wavelength of around 550 nm. Only white light is realized. Moreover, it is possible to obtain high-quality illumination light with excellent color rendering properties by widening or arbitrarily selecting the wavelength conversion band of the phosphor or adding an LED element to which the phosphor is not applied.

  An LED element of a type that is surface-mounted on a circuit board of a light source device is obtained by epitaxially growing p-type and n-type semiconductor layers on a growth substrate such as sapphire, and then forming a p electrode and an n electrode made of a conductor on each semiconductor layer. It has a basic structure laminated to each other. One method for surface-mounting LED elements on a substrate of a chip package or a circuit board of a light source device (hereinafter collectively referred to as “mounting board”) is face-down (FD) mounting. Face down is a method of mounting LED elements in a direction in which the stacking direction of the semiconductor layers and the light extraction direction are reversed. A mounting method in which the stacking direction of the semiconductor layers and the light extraction direction coincide with each other is called face-up (FU).

  For example, Patent Document 1 discloses a structure in which LEDs are face-down mounted on a carrier substrate (corresponding to a mounting substrate). According to the mounting method of Patent Document 1, after LED is flip-chip mounted on a carrier substrate, underfill is injected between the bump-shaped electrodes. This underfill extends to the side surface of the LED epitaxial structure (semiconductor layer in the present specification) and hardens, whereby the support rigidity of the LED mounted on the carrier substrate is enhanced.

JP 2006-344971 A

  By the way, in an illuminator that controls the light distribution characteristics such as the direction and direction of light spread using an optical lens, the light emission area is small, the front luminance is high, and the light distribution color temperature difference is small. A so-called point light source is preferred. Therefore, in a semiconductor light emitting device using a conventional LED, a light emitting element in which a lens is installed is used. By installing a lens in the light emitting element, the light extraction efficiency is increased and the front luminance is increased. However, since a lens is required, a process for forming the lens has been required.

  The present invention has been made in view of such conventional problems, and is a semiconductor light-emitting device that can be realized with a simple structure and suppresses light leakage in the edge direction of the light-emitting element to improve the light distribution characteristics of the light source. And it aims at providing the manufacturing method.

  The present invention relates to a semiconductor layer, an electrode formed on the lower surface side of the semiconductor layer, and a frame-like portion surrounding an outer edge of the semiconductor layer, and is perpendicular to the upper surface of the semiconductor layer. A frame-shaped portion having a certain height and having a certain width at an upper end portion in a direction along the upper surface, the frame-shaped portion formed at least partially in contact with the outer edge of the semiconductor layer And a semiconductor light emitting device.

  Further, the present invention includes a step of disposing a plurality of light emitting elements having a semiconductor layer on a growth substrate and having an electrode on the semiconductor layer, with one surface of the growth substrate being in contact with a sheet at a predetermined interval; Disposing an insulating member so as to fill a gap between the growth substrates of each of the plurality of light emitting elements, forming a groove in the gap between the growth substrates while leaving a part of the insulating member; and A step of peeling off the semiconductor light emitting device.

  Further, the present invention provides a step of preparing a semiconductor wafer formed by stacking semiconductor layers on a growth substrate and arranging a plurality of light emitting elements at a predetermined interval, and a position between the adjacent semiconductor layers. A step of processing a groove in the growth substrate, a step of disposing an insulating member so as to fill the groove of the growth substrate, a step of peeling the growth substrate, and leaving the part of the insulating member. And cutting out each of the light emitting elements at the position of the semiconductor light emitting device.

  According to the semiconductor light emitting device of the present invention, it can be realized with a simple structure, light leakage in the edge direction can be suppressed, and light distribution characteristics of the light source can be improved. Further, according to the method for manufacturing a semiconductor light emitting device of the present invention, a high quality semiconductor light emitting device having a small number of steps and excellent mass productivity can be obtained.

It is a figure which shows typically the cross-sectional structure of the semiconductor light-emitting device by the 1st Embodiment of this invention. It is the top view which looked at the semiconductor light-emitting device by 1st Embodiment shown in FIG. 1 from the light extraction surface side. It is a figure for demonstrating the effect | action of the semiconductor light-emitting device by 1st Embodiment. It is a manufacturing process figure for demonstrating the method to manufacture the semiconductor light-emitting device by 1st Embodiment. It is a figure which shows typically the cross-sectional structure of the semiconductor light-emitting device by the 2nd Embodiment of this invention. It is a figure for demonstrating the effect | action of the semiconductor light-emitting device by 2nd Embodiment. It is a manufacturing process figure for demonstrating the method to manufacture the semiconductor light-emitting device by 2nd Embodiment. It is a manufacturing process figure for demonstrating the method to manufacture the semiconductor light-emitting device by 3rd Embodiment. It is a figure which shows typically the cross section of the light source device by 4th Embodiment. It is a figure which shows typically the cross-section of the semiconductor light-emitting device by 5th Embodiment. It is a figure which shows typically the cross-section of the semiconductor light-emitting device by the modification of 5th Embodiment. It is a figure which shows typically the cross-section of the semiconductor light-emitting device by the other modification of 5th Embodiment. It is a figure which shows typically the cross-section of the semiconductor light-emitting device by 6th Embodiment.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. Throughout each of the drawings to be referred to, the same reference numerals are given to the same constituent elements and forms which are different but have a corresponding relationship. The embodiments described below are merely examples, and the invention is not limited to these specific modes.

(First embodiment)
FIG. 1 is a diagram schematically showing a cross-sectional structure of a semiconductor light emitting device 10 according to a first embodiment of the present invention. The semiconductor light emitting device 10 includes a semiconductor layer 11 that constitutes an LED that is a light emitting element, and a p-electrode 12 and an n-electrode 13 that are respectively formed on the lower surface side of the semiconductor layer 11. The wavelength conversion unit 15 may be disposed in contact with the upper surface of the semiconductor layer 11.

  Note that the expressions “upper surface” and “lower surface” of the semiconductor layer 11 are used in a relative meaning when the light extraction surface side is defined as the upper side and the bottom surface side where the electrode is formed is defined as the lower side in this specification. Only. That is, “upper” and “lower” are not intended to be interpreted in absolute upper and lower meanings.

As shown in detail in FIG. 1, the semiconductor layer 11 has a pn double heterostructure in which an n-type semiconductor layer 111, an active layer 112, and a p-type semiconductor layer 113 are sequentially stacked. The semiconductor layer 11 is, for example nitride compound semiconductor (general formula _{In x Al y Ga 1-xy} N (0 ≦ x, 0 ≦ y, x + y ≦ 1)) consisting of a is for example GaN based blue LED of. The semiconductor layer 11 constituting the LED may be made of another compound semiconductor such as ZnSe, InGaAs, or AlInGaP. The semiconductor layer 11 can be formed by sequentially laminating on a growth substrate (not shown) such as sapphire by, for example, metal organic chemical vapor deposition (MOCVD). Further, the semiconductor layer 11 may be formed using other vapor phase or liquid phase growth methods.

  The p-electrode 12 that is electrically connected to the anode of the LED is provided in electrical contact with the p-type semiconductor layer 113. On the other hand, the n-electrode 13 that is electrically connected to the cathode is provided in electrical contact with the n-type semiconductor layer 111. The p electrode 12 and the n electrode 13 are formed as bumps protruding toward a mounting substrate (not shown). For example, an under barrier metal (UBM) film is formed by sputtering or the like at predetermined positions of the p-type and n-type semiconductor layers 113 and 111, and the conductive metal having good wettability is formed on the formed UBM. By plating Au, bump-shaped p-electrode 12 and n-electrode 13 are obtained.

  In the semiconductor light emitting device 10, carriers are moved and confined in the active layer 112 by supplying a forward current to the semiconductor layer 11, where recombination of carriers occurs efficiently and light is emitted. For this reason, the active layer 112 is also referred to as a light emitting layer.

  Further, in order to realize a high-brightness LED, a light reflection layer 114 may be provided on the lower surface of the p-type semiconductor layer 113. As the light reflecting layer 114, for example, a DBR (Distributed Bragg Reflector) formed as a part of a p-type semiconductor can be used. DBR is a diffraction grating having a spatial period of λ / 2n (where λ is the wavelength of light in vacuum and n is the refractive index in the medium (specifically, p-type semiconductor layer)). That is, the light reflecting layer 114 made of DBR diffracts the light of wavelength λ emitted from the active layer 112 to the mounting substrate side to the light extraction surface side which is the upper surface on the opposite side, while generating a forward drive current. The active layer 112 and the n-type semiconductor layer 111 can be supplied. Thereby, it is possible to improve the light distribution characteristics and improve the light extraction efficiency.

  According to the embodiment of the present invention, the semiconductor light emitting device 10 includes a frame-like portion 14 a formed so as to surround the outer edge of the semiconductor layer 11. The frame-like portion 14 a is formed on the outer edge of the semiconductor layer 11 as a part of the insulating member 14 disposed so as to fill the space between the p electrode 12 and the n electrode 13.

  Specifically, as shown in FIG. 1, the frame-like portion 14 a has a certain height H with respect to the upper surface 11 a in a direction perpendicular to the upper surface 11 a of the semiconductor layer 11 and is along the upper surface 11 a. The upper end portion of the frame-like portion 14a has a certain width W in the horizontal direction. The inner side surface of the frame-like portion 14 a located above the position in contact with the semiconductor layer 11 is formed as a surface perpendicular to the upper surface 11 a of the semiconductor layer 11. Further, the outer wall surface 14b of the frame-shaped portion 14a is orthogonal to or perpendicular to a mounting substrate (not shown) on which the semiconductor light emitting device 10 is mounted, or a surface (mounting surface) mounted on the mounting substrate. Preferably formed as a surface.

The insulating member 14 including the frame-like portion 14a is formed from an insulating material having light reflectivity. Specifically, the main component of the insulating member 14 is preferably a thermosetting resin such as a silicone resin. The insulating material of the insulating member 14 is one kind of oxide selected from the group consisting of Ti, Zr, Nb, Al, and Si in the thermosetting resin, or at least one kind of AlN and MgF. It is preferable that at least one selected from the group consisting of TiO ₂ , ZrO ₂ , Nb ₂ O ₅ , Al ₂ O ₃ , MgF, AlN, and SiO ₂ is mixed. Thereby, in addition to the electrical insulation and mechanical strength suitable for the insulating member 14, light reflectivity can be provided.

  FIG. 2 is a plan view of the semiconductor light emitting device 10 shown in FIG. 1 as viewed from the light extraction surface (the upper surface 11a of the semiconductor layer) side. As shown in FIG. 2, the semiconductor light emitting device 10 has a quadrangular shape in plan view, and the frame-shaped portion 14 a has a rectangular shape so as to surround the edge (outer edge) of the light extraction surface (the upper surface 11 a of the semiconductor layer) of the LED. It is formed in a frame shape.

  The wavelength conversion part 15 is preferably made of a resin containing a phosphor material. Moreover, the wavelength conversion part 15 does not necessarily need to contain a phosphor material, and may be a resin containing a diffusing material (such as a filler) or a coloring material (such as a pigment). The wavelength converter 15 has a constant thickness H ′. As can be easily seen from FIG. 1, the height from the mounting surface, which is the bottom surface, to the top surface of the wavelength conversion portion 15 is higher than that of the frame-shaped portion 14a (that is, H ′> H). As described above, the frame-like portion 14a is formed from an insulating material having light reflectivity. For this reason, a part of the light emitted from the semiconductor layer 11 in the edge direction is reflected by the inner surface of the frame-shaped portion 14a (see FIG. 3). Thereby, the spread of the light emitted from the semiconductor light emitting device 10 can be suppressed, the light leakage in the edge direction can be suppressed, and the light distribution characteristics of the light source can be improved.

  Further, the structure in which the insulating member 14 filling the space between the p-electrode 12 and the n-electrode 13 packages the entire LED light emitting element eliminates the need for underfilling at the time of mounting on the substrate or after mounting on the substrate. Further, the frame-like portion 14a forming a part of the insulating member 14 has a certain height H and width W and surrounds the outer edge of the semiconductor layer 11, so that the external force from the side as compared with the conventional case is simple. And rigidity against stress is increased. In addition, since the frame-like portion 14 a having a certain height extends to the side surface of the wavelength conversion portion 15 and supports it, peeling and damage of the wavelength conversion portion 15 can be prevented.

  Next, a method for manufacturing the semiconductor light emitting device 10 according to the first embodiment will be described with reference to FIG.

  First, a semiconductor layer 11 is stacked on a growth substrate 31, a plurality of light emitting elements 32, 32,... Are arranged at predetermined intervals, and a predetermined electrode, a protective film, etc. are formed on each light emitting element 32. A wafer 30 is prepared (see FIG. 4a). When the semiconductor layer 11 is a nitride compound semiconductor, for example, a GaN blue LED, a sapphire single crystal wafer is preferably used as the growth substrate 31.

  In the semiconductor layer 11 already shown in FIG. 1, the n-type semiconductor layer 111 can be formed from, for example, GaN using Si as a dopant, and the p-type semiconductor layer 113 can be formed from, for example, GaN using Mg or Zn as a dopant. Layer 112 can be formed from, for example, GaN or InGaN. Moreover, in order to constitute a blue LED, the semiconductor layer 11 can be formed of an InAlGaN-based compound.

  The semiconductor layer 11 can be formed by epitaxially growing the n-type semiconductor layer 111, the active layer 112, and the p-type semiconductor layer 113 sequentially on the growth substrate 31, for example, by MOCVD method or other vapor phase growth method.

  After forming the semiconductor layer 11, the p electrode 12 and the n electrode 13 are formed. The p electrode 12 and the n electrode 13 can be formed in a bump shape protruding from a predetermined position of the semiconductor layer 11. That is, a UBM is formed by sputtering or the like on each of the p-type and n-type semiconductor layers 113 and 111, and, for example, Au is plated on the formed UBM, so that the bump-shaped p electrode 12 and the n electrode are formed. 13 is formed. Further, bumps may be formed by wire bonding.

  Next, grooves 31a, 31a,... For separating the light emitting elements 32 at positions between adjacent semiconductor layers 11 are processed (see FIG. 4b). The processing method of the groove 31a is not particularly limited. For example, the groove 31a can be formed on the growth substrate 31 by dicing, diamond cutting, or the like using a blade having a square cross section.

And the insulating member 14 is arrange | positioned so that the groove | channels 31a, 31a, ... between the electrodes of the semiconductor layer 11 and between each light emitting element 32, 32, ... may be filled up (refer FIG. 4c). The insulating member 14 is, for example, at least one oxide selected from the group consisting of Ti, Zr, Nb, Al, and Si, a thermosetting resin made of silicone resin, or AlN and MgF. Is formed of an insulating material having light reflectivity, in which at least one selected from the group consisting of TiO ₂ , ZrO ₂ , Nb ₂ O ₅ , Al ₂ O ₃ , MgF, AlN, and SiO ₂ is mixed. it can.
As a method for forming the insulating member 14, a general molding method such as a compression molding method, a transfer molding method, or an injection molding method can be employed. Alternatively, the insulating member 14 may be formed by a method of printing or applying a resin, a method using a gel-like sheet, or the like, and then cured. Alternatively, the insulating member 14 may be formed (cured) so as to cover the p-electrode 12 and the n-electrode 13 and then cut to expose the electrode, resulting in the state shown in FIG. 4c.

  Are placed so that the electrode sides of the light emitting elements 32, 32,... Are in contact with another adhesive sheet 41 with the growth substrates 31, 31,.

  Next, the growth substrates 31, 31,... Are peeled off from the semiconductor layers 11, 11,... By, for example, LLO (Laser Lift Off) method (see FIG. 4e). And the wavelength conversion part 15 is arrange | positioned as needed on the semiconductor layers 11, 11, ... (refer FIG. 4f). The wavelength conversion unit 14 can be formed using a general molding method such as a compression molding method, a transfer molding method, or an injection molding method. Moreover, you may arrange | position on the semiconductor layer 11 using appropriate methods, such as potting of a material (mainly fluorescent substance), screen printing, electrodeposition, application | coating by spray, and sheet sticking.

As the material of the wavelength conversion unit 15, for example, a nitride phosphor or an oxynitride phosphor activated by a lanthanoid element such as Ce or Eu can be used.
Specifically, for example, a rare earth aluminate activated by a lanthanoid element such as Ce can be used, and among these, a YAG phosphor material is preferably used. In addition, a part or all of Y in the YAG phosphor material may be substituted with Tb and Lu. Moreover, rare earth silicates activated by Ce can be used for the phosphor material.
Also activated by lanthanoid elements such as Eu, alkaline earth halogen apatite, alkaline earth metal halogen borate, alkaline earth metal aluminate, alkaline earth metal sulfide, alkaline earth metal sulfur thiogallate, alkali An organic or organic complex activated by earth metal silicon nitride, germanate, or a lanthanoid element such as Eu can be used as the phosphor material. Examples of red phosphors include SCASN phosphors such as (Sr, Ca) AlSiN ₃ : Eu, CASN phosphors such as CaAlSiN ₃ : Eu, and SrAlSiN ₃ : Eu. In addition, for example, a chlorosilicate phosphor or a β sialon phosphor that absorbs blue light of the light emitting element and emits green light can be used.

  Next, the light emitting elements 32, 32,... Are cut out using appropriate cutting means such as dicing at the position of the groove 31a shown in FIG. Through these steps, a plurality of semiconductor light emitting devices 10 can be obtained simultaneously from one semiconductor wafer 30. Further, the insulating member 14 that insulates between the p-electrode 12 and the n-electrode 13 and packages the entire light-emitting element and the frame-like portion 14a that prevents light leakage in the edge direction are formed in the same process using the same material. Since it can be formed, it is possible to provide a method for manufacturing a high-quality semiconductor light-emitting device with a small number of steps and excellent mass productivity.

(Second Embodiment)
Next, a second embodiment of the present invention will be described. Here, FIG. 5 is a diagram schematically showing a cross-sectional structure of the semiconductor light emitting device 10 according to the second embodiment of the present invention. Similar to the first embodiment, the semiconductor light emitting device 10 includes a semiconductor layer 11, and a p electrode 12 and an n electrode 13 formed on the lower surface side of the semiconductor layer 11. In addition, the wavelength conversion unit 15 is preferably disposed in contact with the upper surface of the semiconductor layer 11.

The semiconductor layer 11 has a pn double heterostructure in which an n-type semiconductor layer 111, an active layer 112, and a p-type semiconductor layer 113 are sequentially stacked. The semiconductor layer 11 is, for example nitride compound semiconductor (general formula _{In x Al y Ga 1-xy} N (0 ≦ x, 0 ≦ y, x + y ≦ 1)) consisting of a is for example GaN based blue LED of. The semiconductor layer 11 constituting the LED may be made of another compound semiconductor such as ZnSe, InGaAs, or AlInGaP. The semiconductor layer 11 is formed by sequentially stacking on a growth substrate (not shown) such as sapphire by, for example, MOCVD. The semiconductor layer 11 may be formed using other vapor phase or liquid phase growth methods.

  The p-electrode 12 that is electrically connected to the anode of the LED is provided in electrical contact with the p-type semiconductor layer 113. On the other hand, the n-electrode 13 that is electrically connected to the cathode is provided in electrical contact with the n-type semiconductor layer 111. The p electrode 12 and the n electrode 13 are formed as bumps protruding toward a mounting substrate (not shown).

  Further, in order to realize a high-brightness LED, a light reflection layer 114 may be provided on the lower surface of the p-type semiconductor layer 113. For the light reflecting layer 114, for example, DBR formed as a part of a p-type semiconductor can be used. Thereby, it is possible to improve the light distribution characteristics and improve the light extraction efficiency.

  The semiconductor light emitting device 10 includes a frame-like portion 14 a formed so as to surround the outer edge of the semiconductor layer 11. The frame-like portion 14 a is formed on the outer edge of the semiconductor layer 11 as a part of the light-reflective insulating member 14 disposed so as to fill the space between the p-electrode 12 and the n-electrode 13.

  The frame-like portion 14a has a quadrangular outer edge shape in plan view, has a certain height with respect to the upper surface 11a in a direction perpendicular to the upper surface 11a of the semiconductor layer 11, and in a direction along the upper surface 11a. The upper end portion has a certain width. In the semiconductor light emitting device 10 of the second embodiment, in more detail, the inner side surface 14t of the frame-like portion 14a in contact with the semiconductor layer 11 is formed as an inclined surface that extends upward with respect to the upper surface 11a. That is, the rectangular opening side of the frame-like portion 14 a is wider than the light extraction surface of the semiconductor layer 11. On the other hand, the outer wall surface 14 b of the frame-like portion 14 a is formed as a surface that is orthogonal to or perpendicular to the mounting surface of the semiconductor light emitting device 10.

The insulating member 14 including the frame-like portion 14a is formed from an insulating material having light reflectivity. Specifically, the main component of the insulating member 14 is preferably a thermosetting resin such as a silicone resin. The insulating material of the insulating member 14 is one kind of oxide selected from the group consisting of Ti, Zr, Nb, Al, and Si in the thermosetting resin, or at least one kind of AlN and MgF. It is preferable that at least one selected from the group consisting of TiO ₂ , ZrO ₂ , Nb ₂ O ₅ , Al ₂ O ₃ , MgF, AlN, and SiO ₂ is mixed. Thereby, in addition to the electrical insulation and mechanical strength suitable for the insulating member 14, light reflectivity can be provided. When the wavelength conversion unit 15 is disposed in contact with the upper surface of the semiconductor layer 11, the height from the mounting surface, which is the bottom surface, to the upper surface of the wavelength conversion unit 15 is easy to understand from FIG. 5. Higher than that.

  FIG. 6 is a diagram illustrating the operation of the semiconductor light emitting device 10 according to the second embodiment. As described above, the frame-like portion 14a is formed from an insulating material having light reflectivity. For this reason, a part of the light emitted from the semiconductor layer 11 in the edge direction is reflected by the inclined inner side surface 14t of the frame-shaped portion 14a. Thereby, the spread of light emitted from the semiconductor light emitting device 10 is suppressed, and light leakage in the edge direction is suppressed. Further, since the direction of light reflected by the inner side surface 14t of the frame-shaped portion 14a is substantially orthogonal to the surface of the wavelength conversion portion 15, refraction in an undesired direction at the boundary surface between the wavelength conversion portion 15 and air is suppressed. be able to. Thereby, the light distribution characteristic of the light source can be further improved.

  In addition, the structure in which the insulating member 14 filling the gap between the p-electrode 12 and the n-electrode 13 packages the entire semiconductor layer 11 eliminates the need for underfilling during or after mounting the substrate, which is conventionally required. In addition, the frame-like portion 14a forming a part of the insulating member 14 has a certain height and width and surrounds the outer edge of the semiconductor layer 11, so that the external force and stress from the side as compared with the conventional structure are reduced. The rigidity against is increased. In addition, since the frame-like portion 14 a having a certain height extends to the side surface of the wavelength conversion portion 15 and supports it, peeling and damage of the wavelength conversion portion 15 can be prevented.

  Next, a method for manufacturing the semiconductor light emitting device 10 according to the second embodiment will be described with reference to FIG.

  First, a semiconductor layer 11 is stacked on a growth substrate 31, a plurality of light emitting elements 32, 32,... Are arranged at predetermined intervals, and a predetermined electrode, a protective film, etc. are formed on each light emitting element 32. A wafer 30 is prepared (see FIG. 7a). In the case where the semiconductor layer 11 is a nitride compound semiconductor, for example, a GaN blue LED, sapphire is suitably used as the growth substrate 31.

  In the semiconductor layer 11 already shown in FIG. 5, the n-type semiconductor layer 111 can be formed from, for example, GaN using Si as a dopant, and the p-type semiconductor layer 113 can be formed from, for example, GaN using Mg or Zn as a dopant. Layer 112 can be formed from, for example, GaN or InGaN. Moreover, in order to constitute a blue LED, the semiconductor layer 11 can be formed of an InAlGaN-based compound.

  The semiconductor layer 11 can be formed by epitaxially growing the n-type semiconductor layer 111, the active layer 112, and the p-type semiconductor layer 113 sequentially on the growth substrate 31, for example, by MOCVD method or other vapor phase growth method.

  After forming the semiconductor layer 11, the p electrode 12 and the n electrode 13 are formed. The p electrode 12 and the n electrode 13 can be formed in a bump shape protruding from a predetermined position of the semiconductor layer 11. That is, a UBM is formed by sputtering or the like on each of the p-type and n-type semiconductor layers 113 and 111, and, for example, Au is plated on the formed UBM, so that the bump-shaped p electrode 12 and the n electrode are formed. 13 is formed.

Next, grooves 31b, 31b,... Whose side surfaces are inclined and the bottom surfaces are flat or substantially flat are processed at positions between adjacent semiconductor layers 11 (see FIG. 7b). Although the processing method of the groove 31b is not particularly limited, the groove 31b can be formed on the growth substrate 31 by dicing, diamond cutting, or the like, for example, with a trapezoidal cross section. And the insulating member 14 is arrange | positioned so that the groove | channels 31b, 31b, ... between the electrodes of the semiconductor layer 11 and between each light emitting element 32, 32, ... may be filled up (refer FIG. 7c). The insulating member 14 is, for example, at least one oxide selected from the group consisting of Ti, Zr, Nb, Al, and Si, a thermosetting resin made of silicone resin, or AlN and MgF. Is formed of an insulating material having light reflectivity, in which at least one selected from the group consisting of TiO ₂ , ZrO ₂ , Nb ₂ O ₅ , Al ₂ O ₃ , MgF, AlN, and SiO ₂ is mixed. it can.

  Are placed so that the electrode sides of the light emitting elements 32, 32,... Are in contact with the adhesive sheet 41 with the growth substrates 31, 31,.

  Next, the growth substrate 31 is peeled off from the semiconductor layers 11, 11,... By, for example, the LLO method (see FIG. 7e). And the wavelength conversion part 15 is arrange | positioned as needed on the semiconductor layers 11, 11, ... (refer FIG. 7f). Before the wavelength conversion unit 15 is disposed, plasma cleaning or primer treatment may be performed in order to improve the adhesion between the semiconductor layer 11 and the wavelength conversion unit 15.

  Next, the light emitting elements 32, 32,... Are cut out at the positions of the grooves 31b shown in FIG. Each light emitting element can be cut out by using an appropriate cutting means such as dicing. Through these steps, a plurality of semiconductor light emitting devices 10 can be obtained simultaneously from one semiconductor wafer 30. Further, the insulating member 14 that insulates between the p-electrode 12 and the n-electrode 13 and packages the entire light-emitting element and the frame-like portion 14a that prevents light leakage in the edge direction are formed in the same process using the same material. Since it can be formed, it is possible to provide a method for manufacturing a high-quality semiconductor light-emitting device with a small number of steps and excellent mass productivity.

(Third embodiment)
Next, a third embodiment, which is another method for manufacturing the semiconductor light emitting device 10 having the structure shown in FIG. 1, will be described with reference to the manufacturing process diagram of FIG.

  First, a plurality of light emitting elements 32, 32,... Each having a semiconductor layer 11, a predetermined electrode, a protective film, and the like formed on a growth substrate 31 are prepared. Similar to the first and second embodiments, the semiconductor layer 11 can be formed from, for example, GaN using Si as a dopant for the n-type semiconductor layer 111 by, for example, MOCVD or other vapor phase growth method. The layer 113 can be formed from GaN using, for example, Mg or Zn as a dopant, and the active layer 112 can be formed from, for example, GaN or InGaN. Moreover, in order to constitute a blue LED, the semiconductor layer 11 can be formed of an InAlGaN-based compound.

  The p-electrode 12 and the n-electrode 13 are formed into bumps by depositing UBMs by sputtering or the like at respective predetermined positions of the p-type and n-type semiconductor layers 113 and 111, and plating, for example, Au on the formed UBMs. It is formed.

  Each light emitting element 32 is arranged on the adhesive sheet 40 at a predetermined interval so that one surface of the growth substrate 31 is in contact with the adhesive sheet 40 (see FIG. 8a). In addition, after sticking the wafer which formed multiple light emitting elements 32, 32, ... on the adhesive sheet 40, a groove | channel is formed in the boundary of the light emitting elements 32, 32, ... by dicing or diamond cutting, etc. A method of separating the light emitting element 32 on the adhesive sheet 40 may be used.

Next, the insulating member 14 is disposed so as to fill between the electrodes of the semiconductor layer 11 and between the plurality of light emitting elements 32, 32,... (See FIG. 8b). The insulating member 14 is, for example, at least one oxide selected from the group consisting of Ti, Zr, Nb, Al, and Si, a thermosetting resin made of silicone resin, or AlN and MgF. Is formed of an insulating material having light reflectivity, in which at least one selected from the group consisting of TiO ₂ , ZrO ₂ , Nb ₂ O ₅ , Al ₂ O ₃ , MgF, AlN, and SiO ₂ is mixed. it can.

  Are placed so that the electrode sides of the light emitting elements 32, 32,... Are in contact with another adhesive sheet 41 with the growth substrates 31, 31,. Then, after thermally curing the insulating member 14, each light emitting element 32, leaving a part of the insulating member 14 at the boundary between the light emitting elements 32, 32,. .. Are formed (see FIG. 4d). For forming these grooves 14c and 14c, for example, a cutting means such as dicing is used, but the grooves 14c and 14c may be formed by a dry etching method. The frame-like portion 14a is formed by forming the groove 14c leaving a part of the insulating member 14.

  Note that the step of forming the grooves 14c and 14c in the insulating member 14 may be omitted, and the frame-like portion 14a may be formed in a step of cutting out each light emitting element 32, 32,.

  Next, the growth substrates 31, 31,... Are peeled off from the semiconductor layers 11, 11,... By, for example, the LLO method (see FIG. 8e). The wavelength conversion unit 15 may be arranged on the semiconductor layers 11, 11,... As necessary (see FIG. 8f).

  Next, each light emitting element 32, 32,... Is cut out on the adhesive sheet 41 using an appropriate cutting means such as dicing (see FIG. 8g).

  According to the manufacturing method of the third embodiment, since only the light emitting elements 32 whose color tone has been selected in advance can be arranged on the pressure-sensitive adhesive sheet 40, it is possible to reduce variations in color tone especially after whitening.

(Fourth embodiment)
FIG. 9 is a diagram schematically showing a cross section of the light source device according to the fourth embodiment of the present invention. Here, FIG. 9A shows the semiconductor light emitting device 10 of the first embodiment shown in FIG. 1 mounted on a mounting substrate 20 that is a circuit substrate of the light source device. FIG. 9B shows the semiconductor light emitting device 10 of the second embodiment shown in FIG. 5 mounted on the mounting substrate 20.

  The mounting substrate 20 is made of a plate-like material having insulating properties such as glass epoxy resin or ceramic such as alumina, and a conductive pattern made of, for example, copper is formed on the surface thereof by a known printing technique such as an electrolytic plating method or an etching method. Is formed. The surface of the conductive pattern is preferably plated with a highly reflective metal such as Ag, Au, or Al. In the fourth embodiment, a plurality of semiconductor light emitting devices 10 are provided in a state where they are flip-chip mounted on the conductive pattern of the mounting substrate 20 of the light source device.

  According to the fourth embodiment, since the amount of light emitted from each semiconductor light emitting device 10 in the lateral direction is reduced, the amount of light absorbed by the adjacent light emitting devices is reduced, and the semiconductor light emitting device 10 is mounted on the mounting substrate 20. Even when a plurality of light sources are arranged in a row, a decrease in light extraction efficiency can be suppressed.

(Fifth embodiment)
FIG. 10 is a view schematically showing a cross section of the semiconductor light emitting device 10 according to the fifth embodiment of the present invention. The semiconductor light emitting device 10 includes a semiconductor layer 11 and a p-electrode 12 and an n-electrode 13 formed on the lower surface side of the semiconductor layer 11 as in the above-described embodiment. Further, the semiconductor light emitting device 10 includes a frame-shaped portion 14 a having light reflectivity, which is formed so as to surround the outer edge of the semiconductor layer 11. The frame-like portion 14 a is formed on the outer edge of the semiconductor layer 11 as a part of the insulating member 14 disposed so as to fill the space between the p electrode 12 and the n electrode 13.

  Furthermore, in the semiconductor light emitting device 10 according to the present embodiment, the wavelength conversion unit 15 ′ having a step in contact with the upper surface of the semiconductor layer 11 is disposed. The wavelength converting portion 15 ′ is preferably made of a resin containing a phosphor material, but may be a resin containing a diffusing material and / or a coloring material or a resin mixed with the diffusing material and the coloring material. Good.

  In the wavelength converting portion 15 ′, the thickness of the portion covering the vicinity of the frame-shaped portion 14a and the thickness of the central portion covering the upper surface of the semiconductor layer 11 are substantially the same, but the frame-shaped portion 14a has a height H (see FIG. 1). ), A step as shown in FIG. 10 is formed. The semiconductor light emitting device 10 according to the fifth embodiment may have a rectangular or circular outer shape in plan view. If the semiconductor light emitting device 10 has a rectangular shape in plan view, the step of the wavelength converting portion 15 ′ is formed in a square shape along the outer edge of the semiconductor layer 11. If the semiconductor light emitting device 10 has a circular shape, the step of the wavelength converting portion 15 ′ A circular shape is formed along the outer edge of the semiconductor layer 11.

  The semiconductor light emitting device 10 according to the fifth embodiment includes a step of applying the resin material of the wavelength conversion unit 15 ′ to the upper surface of the semiconductor layer 11 by, for example, spraying after peeling the growth substrate from the semiconductor layer 11. Can be manufactured.

FIG. 11 shows a cross section of a semiconductor light emitting device 10 according to a modification of the fifth embodiment. In this modification, the resin material of the wavelength conversion unit 15 ′ is thinly laminated on the upper surface of the semiconductor layer 11 by, for example, electrodeposition or spray coating. That is, as shown in FIG. 11, the wavelength conversion portion 15 ′ is formed such that the height to the upper surface is lower than that of the frame-shaped portion 14a. Here, when the wavelength conversion part 15 ′ is formed by electrodeposition, the wavelength conversion material can be disposed only on the upper surface of the conductive semiconductor layer 11. When spray is used, the wavelength conversion material can be thinly applied only to the upper surface of the semiconductor layer 11 by masking the frame-like portion 14a.
As shown in FIG. 12, a transparent layer 16 may be formed over the entire surface of the wavelength conversion unit 15 ′ to protect the wavelength conversion unit 15 ′ stacked by electrodeposition or spray coating.

(Sixth embodiment)
FIG. 13 is a view schematically showing a cross section of the semiconductor light emitting device 10 according to the sixth embodiment of the present invention. The semiconductor light emitting device 10 of this embodiment also includes a semiconductor layer 11 and a p-electrode 12 and an n-electrode 13 formed on the lower surface side of the semiconductor layer 11 as in the above-described embodiment. Further, the semiconductor light emitting device 10 includes a frame-shaped portion 14 a having light reflectivity, which is formed so as to surround the outer edge of the semiconductor layer 11. The frame-like portion 14 a is formed on the outer edge of the semiconductor layer 11 as a part of the insulating member 14 disposed so as to fill the space between the p electrode 12 and the n electrode 13.

  Furthermore, in the semiconductor light emitting device 10 according to the sixth embodiment, a dome-shaped wavelength conversion unit 15 ″ is disposed in contact with the upper surface of the semiconductor layer 11. The wavelength conversion unit 15 ″ is made of a resin containing a phosphor material. Preferably, it may be a resin or phosphor containing a diffusing material and / or a coloring material, and a resin obtained by mixing these diffusing material and coloring material.

  The semiconductor light emitting device 10 according to the sixth embodiment preferably has a circular outer shape in plan view. In this case, the peripheral end portion of the wavelength converting portion 15 ″ is formed in a circle along the outer edge of the semiconductor layer 11. Further, the peripheral end portion of the wavelength converting portion 15 ″ covers the frame-like portion 14a. There may be.

  Such a semiconductor light emitting device 10 of the sixth embodiment is manufactured by including a step of potting, for example, a resin material of the wavelength converting portion 15 ″ on the upper surface of the semiconductor layer 11 after peeling the growth substrate from the semiconductor layer 11. can do.

DESCRIPTION OF SYMBOLS 10 Semiconductor light-emitting device 11 Semiconductor layer 11a Upper surface 12 P electrode 13 N electrode 14 Insulating member 14a Frame-shaped part 14b Outer wall surface 14c Groove 14t Inner side surface 15 Wavelength conversion part 20 Mounting substrate 30 Semiconductor wafer 31 Growth substrate 31a, 31b Groove 32 Light emitting element

Claims (14)

A semiconductor layer;
An electrode formed on the lower surface side of the semiconductor layer;
A frame shape surrounding the outer edge of the semiconductor layer, having a constant height with respect to the upper surface in a direction perpendicular to the upper surface of the semiconductor layer, and having a constant width at the upper end portion in the direction along the upper surface A frame-shaped portion formed at least partially in contact with the outer edge of the semiconductor layer.   The semiconductor light-emitting device according to claim 1, wherein the frame-shaped portion is formed of an insulating material having light reflectivity.   The semiconductor light-emitting device according to claim 2, wherein the frame-shaped portion is made of a thermosetting resin. 2 wherein the thermosetting resin is _{TiO, ZrO 2, Nb 2 O} 5, Al 2 O 3, MgF, which is a material obtained by mixing at least one AlN, is selected from the group consisting of SiO _2, claim 3 Semiconductor light emitting device.   5. The semiconductor light emitting device according to claim 1, wherein an outer wall surface of the frame-shaped portion is formed as a surface perpendicular to a mounting surface of the semiconductor light emitting device.   6. The semiconductor light emitting device according to claim 1, wherein an inner side surface of the frame-shaped portion in contact with the semiconductor layer is formed as a surface perpendicular to the upper surface.   The semiconductor light-emitting device according to claim 1, wherein the semiconductor light-emitting device is formed as an inclined surface such that an inner surface of the frame-shaped portion in contact with the semiconductor layer extends upward with respect to the upper surface.   The semiconductor light-emitting device according to claim 1, wherein an outer edge shape of the frame-like portion is a quadrangle in a plan view.   The semiconductor light-emitting device according to claim 1, wherein a wavelength conversion unit is disposed on the semiconductor layer.   The semiconductor light emitting device according to claim 9, wherein the wavelength conversion unit has a thickness, and the height of the wavelength conversion unit from the mounting surface is higher than that of the frame-shaped unit. Arranging a plurality of light emitting elements having a semiconductor layer on a growth substrate and electrodes on the semiconductor layer, with one surface of the growth substrate being in contact with a sheet and a predetermined interval;
Disposing an insulating member so as to fill a gap between the growth substrates of the plurality of light emitting elements; and
Forming a groove in the gap of the growth substrate leaving a part of the insulating member;
Peeling the growth substrate;
A method for manufacturing a semiconductor light emitting device, comprising: Preparing a semiconductor wafer formed by laminating a semiconductor layer on a growth substrate and arranging a plurality of light emitting elements at a predetermined interval;
Machining a groove in the growth substrate at a position between the adjacent semiconductor layers;
Disposing an insulating member to fill the groove of the growth substrate;
Peeling the growth substrate;
Cutting out each light emitting element at the position of the groove leaving a part of the insulating member;
A method for manufacturing a semiconductor light emitting device, comprising:   The method of manufacturing a semiconductor light emitting device according to claim 12, wherein the groove has an inclined side surface and a substantially flat bottom surface.   The method for manufacturing a semiconductor light emitting device according to claim 11, further comprising a step of disposing a wavelength conversion unit on the semiconductor layer after peeling the growth substrate.

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