JP2020161762A - Method for manufacturing light-emitting device - Google Patents

Abstract

To provide a method for manufacturing a highly-efficient light-emitting device.SOLUTION: According to an embodiment, a method for manufacturing a light-emitting device includes the steps of: forming a resin layer including a side surface facing a silicon substrate around a structure including the silicon substrate and a semiconductor laminate including a first surface in contact with the silicon substrate; exposing the first surface of the semiconductor laminate from the resin layer by removing the silicon substrate; forming a reflection film including a first surface facing region facing the first surface and a side surface facing region facing the side surface on the first surface and a side surface of the resin layer; and performing anisotropic etching to remove the first surface facing region of the reflection film and leave at least a part of the side surface facing region. In the reflection film forming step, at least a part of the side surface of the resin layer is substantially perpendicular to the first surface.SELECTED DRAWING: Figure 1

Description

The present invention relates to a method for manufacturing a light emitting device.

Patent Document 1 discloses a light emitting device in which a reflective member made of a reflective resin or the like is arranged on a side surface of an LED element. Further improvement in light extraction efficiency is desired in the light emitting device.

Japanese Unexamined Patent Publication No. 2012-227470

One embodiment of the present invention provides a method for manufacturing a light emitting device having high light extraction efficiency.

The method for manufacturing a light emitting device according to an embodiment of the present invention is a resin including a side surface facing the silicon substrate around a structure including a silicon substrate and a semiconductor laminate including a first surface in contact with the silicon substrate. Including the step of forming a layer. The manufacturing method includes a step of removing the silicon substrate to expose the first surface of the semiconductor laminate from the resin layer. The manufacturing method comprises a step of forming a reflective film on the first surface and the side surface of the resin layer, which includes a first surface facing region facing the first surface and a side facing region facing the side surface. Including. The manufacturing method includes a step of performing anisotropic etching in which the first surface facing region of the reflecting film is removed and at least a part of the side facing region of the reflecting film is left. In the step of forming the reflective film, at least a part of the side surface of the resin layer is substantially perpendicular to the first surface.

According to one embodiment of the present invention, it is possible to provide a method for manufacturing a light emitting device having high light extraction efficiency.

FIG. 1 is a flowchart illustrating a method of manufacturing a light emitting device according to the first embodiment. FIG. 2 is a schematic cross-sectional view illustrating the method for manufacturing the light emitting device according to the first embodiment. FIG. 3 is a schematic cross-sectional view illustrating the method for manufacturing the light emitting device according to the first embodiment. FIG. 4 is a schematic cross-sectional view illustrating the method for manufacturing the light emitting device according to the first embodiment. FIG. 5 is a schematic cross-sectional view illustrating the method for manufacturing the light emitting device according to the first embodiment. FIG. 6 is a schematic cross-sectional view illustrating the method for manufacturing the light emitting device according to the first embodiment. FIG. 7 is a schematic cross-sectional view illustrating the method for manufacturing the light emitting device according to the first embodiment. FIG. 8 is a schematic cross-sectional view illustrating the method for manufacturing the light emitting device according to the first embodiment. FIG. 9 is a schematic cross-sectional view illustrating the method for manufacturing the light emitting device according to the first embodiment. FIG. 10 is a schematic cross-sectional view illustrating a part of the light emitting device according to the first embodiment. FIG. 11 is a schematic cross-sectional view illustrating a part of the light emitting device according to the first embodiment. FIG. 12 is a schematic cross-sectional view illustrating the light emitting device according to the second embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
It should be noted that the drawings are schematic or conceptual, and the relationship between the thickness and width of each configuration, the ratio of sizes between configurations, and the like are not necessarily the same as those in reality. Further, even when the same configuration is represented, the dimensions and ratios of the drawings may be different from each other.
In the specification of the present application, the same elements as those described above with respect to the above-mentioned figures are designated by the same reference numerals, and detailed description thereof will be omitted as appropriate.

(First Embodiment)
FIG. 1 is a flowchart illustrating a method of manufacturing a light emitting device according to the first embodiment. 2 to 8 are schematic cross-sectional views illustrating the method for manufacturing the light emitting device according to the first embodiment.
As shown in FIG. 1, in the method for manufacturing a light emitting device according to the present embodiment, a resin layer is formed on the structure 15 (step S110). For example, in the step of forming the resin layer 30, the structure 15 as shown in FIG. 2 is prepared, and the resin layer 30 is formed around the structure 15. The structure 15 includes a silicon substrate 10 and a semiconductor laminate 20. The semiconductor laminate 20 includes a first surface 20fa in contact with the silicon substrate 10. The first surface 20fa faces the silicon substrate 10. The structure 15 is a structure in which, for example, a silicon substrate 10 is used as a growth substrate, and a semiconductor laminate 20 is formed on the silicon substrate 10. The resin layer 30 includes a side surface 30s facing the side surface of the silicon substrate 10.

The direction from the semiconductor laminate 20 toward the silicon substrate 10 is defined as the first direction D1. The first direction D1 is the Z-axis direction. One direction perpendicular to the Z-axis direction is defined as the X-axis direction. The direction perpendicular to the Z-axis direction and the X-axis direction is defined as the Y-axis direction.

The first surface 20fa is along the XY plane. The first surface 20fa is substantially parallel to the XY plane. The side surface 30s intersects the XY plane.

As shown in FIG. 2, the step of forming the resin layer 30 is performed in a state where the structure 15 is fixed to the support member 60. The support member 60 is, for example, a mounting board for mounting the structure 15. In this state, the semiconductor laminate 20 is provided between the support member 60 and the silicon substrate 10. The semiconductor laminate 20 includes a facing surface 20fc facing the support member 60. The facing surface 20fc is between the first surface 20fa and the support member 60. For example, the first element electrode 20E and the second element electrode 20F are provided on the facing surface 20fc of the semiconductor laminate 20.

On the other hand, the first electrode 51 and the second electrode 52 are provided on the surface of the support member 60. For example, the first electrode 51 and the first element electrode 20E are electrically connected by the first connecting member 51C. For example, the second electrode 52 and the second element electrode 20F are electrically connected by the second connecting member 52C. By applying a voltage between the first electrode 51 and the second electrode 52, a current is supplied to the semiconductor laminate 20. As a result, light is emitted from the semiconductor laminate 20.

The resin layer 30 contains, for example, a resin and a plurality of particles. There is resin around multiple particles. The particles have a function of diffusing light from the semiconductor laminate 20. The particles include, for example, titanium oxide or aluminum oxide. The resin includes, for example, an acrylic resin or a silicone resin. The resin layer 30 contains, for example, a silicone resin and titanium oxide. The reflectance of the resin layer 30 at the peak wavelength of the light emitted from the semiconductor laminate 20 is, for example, higher than the reflectance of the semiconductor laminate 20 at the peak wavelength.

For example, after the structure 15 is mounted on the support member 60, a resin is applied and the resin is cured to form the resin layer 30.

As shown in FIG. 2, in this example, a part of the resin layer 30 is also formed on the silicon substrate 10. As shown in FIG. 2, the silicon substrate 10 includes a third surface 10fc and a fourth surface 10fd. The third surface 10fc is in contact with the first surface 20fa of the semiconductor laminate 20. The third surface 10fc faces the first surface 20fa. The third surface 10fc is between the first surface 20fa and the fourth surface 10fd. The fourth surface 10fd is the surface opposite to the third surface 10fc.

In the example of FIG. 2, for example, the first surface 20fa of the semiconductor laminate 20 is the upper surface of the semiconductor laminate 20. For example, the third surface 10fc of the silicon substrate 10 is the lower surface of the silicon substrate 10. For example, the fourth surface 10fd of the silicon substrate 10 is the upper surface of the silicon substrate 10.

In the step of forming the resin layer 30 (step S110), the resin layer 30 may cover the fourth surface 10fd of the silicon substrate 10. The resin layer 30 includes the first region 31. The first region 31 faces the fourth surface 10fd. The first region 31 is in contact with, for example, the fourth surface 10fd. The first region 31 covers, for example, the fourth surface 10fd of the silicon substrate 10. There is a silicon substrate 10 between the first region 31 and the semiconductor laminate 20.

As shown in FIG. 2, in this example, the resin layer 30 further includes a second surface 30fb in addition to the side surface 30s. The second surface 30fb does not overlap with the silicon substrate 10 in the first direction D1. The second surface 30fb is adjacent to the first region 31 of the resin layer 30.

The resin layer 30 having such a structure is formed in step S110.

As shown in FIG. 1, in the method for manufacturing a light emitting device according to the present embodiment, the silicon substrate 10 is removed to expose the first surface 20fa of the semiconductor laminate 20 from the resin layer 30 (step S120).

In this example, as shown in FIG. 3, first, the first region 31 (for example, the portion covering the fourth surface 10fd) of the resin layer 30 is removed. As a result, the silicon substrate 10 is exposed. In the step of removing the first region 31 of the resin layer 30, the portion of the resin layer 30 including the second surface 30fb is also removed. Part of the resin layer 30 can be removed by, for example, grinding (including CMP) or the like.

After that, as shown in FIG. 4, the first surface 20fa is exposed by removing the silicon substrate 10. For example, the silicon substrate 10 is removed by RIE or the like. By removing the silicon substrate 10, a part of the first surface 20fa may be removed.

As shown in FIGS. 3 and 4, in the step of exposing the first surface 20fa (step S120), the first region 31 (the portion covering the fourth surface 10fd) of the resin layer 30 is removed to remove the silicon substrate 10. It may include exposing.

As shown in FIG. 1, after that, rough surface processing (step S125) may be performed, if necessary. Rough surface processing will be described later.

As shown in FIG. 1, a reflective film is formed (step S130). For example, as shown in FIG. 5, the reflective film 40 is formed on the first surface 20fa and the side surface 30s of the resin layer 30. The reflective film 40 includes a first surface facing region 40fp and a side facing region 40sp. The first surface facing region 40fp faces the first surface 20fa. The side surface facing region 40sp faces the side surface 30s of the resin layer 30.

In this example, the reflective film 40 further includes a second surface facing region 40fq. The second surface facing region 40fq faces the second surface 30fb of the resin layer 30. For example, the side surface facing region 40sp is continuous with the first surface facing region 40fp and the second surface facing region 40fq.

The reflective film 40 is formed by, for example, a sputtering method. In one example, the reflective film 40 includes a DBR (Distributed Bragg Reflector). The reflective film 40 may include a metal film. The reflectance of the reflective film 40 with respect to the light from the semiconductor laminate 20 is higher than the reflectance of the resin layer 30. An example of the reflective film 40 will be described later.

As shown in FIG. 1, anisotropic etching is performed (step S140). As shown in FIG. 6, in step S140, the first surface facing region 40fp of the reflective film 40 is removed. At this time, at least a part of the side surface facing region 40sp of the reflective film 40 is left. In anisotropic etching, for example, an etching gas such as fluorine is used.

When the reflective film 40 includes the second surface facing region 40fq, the second surface facing region 40fq is also removed in step S140.

In the present embodiment, in the step of forming the reflective film (step S130), at least a part of the side surface 30s of the resin layer 30 is substantially perpendicular to the first surface 20fa. For example, as shown in FIG. 6, the angle θ2 formed by at least a part of the side surface 30s and the first surface 20fa is 80 degrees or more and 100 degrees or less.

This angle θ2 is determined by the formation of the resin layer 30 (see FIG. 2). As shown in FIG. 2, the silicon substrate 10 includes a third surface 10fc in contact with the first surface 20fa of the semiconductor laminate 20. At least a part of the side surface 30s is substantially perpendicular to the third surface 10fc of the silicon substrate 10. The angle θ1 formed by at least a part of the side surface 30s and the third surface 10fc of the silicon substrate 10 is 80 degrees or more and 100 degrees or less. The angle θ1 corresponds to the angle θ2. The angle θ1 is determined by, for example, a fractured surface formed by cutting the silicon substrate 10. For example, when the silicon substrate 10 is cut into individual sides, the cross-sectional view shape of the silicon substrate 10 is made rectangular. As a result, the side surface 30s of the resin layer 30 becomes substantially perpendicular to the upper surface of the resin layer 30.

Since at least a part of the side surface 30s of the resin layer 30 is substantially perpendicular to the first surface 20fa, the first surface facing region 40fp and the second surface facing region in the anisotropic etching (step S140) 40fq is efficiently removed, and the side facing region 40sp tends to remain. Damage to the side facing region 40sp remaining after anisotropic etching can be suppressed. In the side surface facing region 40sp of the reflective film 40, it is easy to obtain high light reflection characteristics with respect to the light from the semiconductor laminate 20. This makes it possible to manufacture a light emitting device having high light extraction efficiency.

In the present embodiment, the reflective film 40 formed on the side surface 30s substantially perpendicular to the upper surface of the resin layer 30 is not removed by anisotropic etching, and the surface of the semiconductor laminate 20 and the upper surface of the resin layer 30 are formed. The reflective film 40 provided on the surface can be selectively removed. As a result, the light from the semiconductor laminate 20 can be efficiently reflected by the reflective film 40 formed on the side surface 30s of the resin layer 30. According to this embodiment, a light emitting device having a high light extraction efficiency can be efficiently manufactured.

In the present embodiment, the resin layer 30 is formed along the outer shape of the silicon substrate 10. The side surface 30s of the resin layer 30 follows the shape of the side surface of the silicon substrate 10. A reflective film 40 including a side surface facing region 40sp facing the side surface 30s is formed, and a part of the reflective film 40 (a portion excluding the side surface facing region 40sp) is removed. By forming such a side surface 30s and removing a part of the reflective film 40, the side surface facing region 40sp can be formed with high accuracy.

For example, a reference example in which a mask or the like is formed when a part of the reflective film 40 is removed and a part of the reflective film 40 is removed by using the mask can be considered. In this reference example, the opening of the mask may be misaligned. Therefore, a margin considering the misalignment is applied, and as a result, the miniaturization of the light emitting device is limited. As a result, it becomes difficult to obtain sufficient light reflection characteristics by the reflective film 40. Further, since the number of steps for manufacturing the light emitting device is increased, the cost is increased.

On the other hand, in the present embodiment, in the formation of the reflective film (step S130), at least a part of the side surface 30s of the resin layer 30 is substantially perpendicular to the first surface 20fa. Therefore, the first surface facing region 40fp and the second surface facing region 40fq can be efficiently removed by anisotropic etching (step S140). Damage to the side facing region 40sp remaining after anisotropic etching can be suppressed. As a result, high light reflection characteristics can be obtained due to the highly efficient side facing region 40sp, and a light emitting device having high light extraction efficiency can be manufactured. Further, the process of manufacturing the light emitting device is simple, which is advantageous in terms of cost.

In this embodiment, the steps described below may be further carried out.
As shown in FIG. 1, a wavelength conversion member is formed (step S150). For example, as shown in FIG. 7, the wavelength conversion member 35 is formed after the step of performing anisotropic etching (step S140). The wavelength conversion member 35 is formed in at least a part of the region R1 formed by removing the silicon substrate 10. In the first direction D1, the thickness of the wavelength conversion member 35 is formed to be, for example, the same as the thickness of the side facing region 40sp, or thin enough not to impair the wavelength conversion function. As a result, the light from the wavelength conversion member 35 is easily reflected by the side facing region 40sp.

The wavelength conversion member 35 includes, for example, a plurality of wavelength conversion particles (for example, phosphor particles) and a resin around the plurality of wavelength conversion particles. The resin includes, for example, an acrylic resin or a silicone resin.

In the present embodiment, as shown in FIG. 1, a step of forming the resin member (step S160) may be provided after the step of forming the wavelength conversion member (step S150). As shown in FIG. 7, for example, after the step of forming the wavelength conversion member 35, the resin member 36 is formed in the remaining portion of the region R1 formed by removing the silicon substrate 10. The resin member 36 is, for example, a translucent resin. The resin member 36 includes, for example, an acrylic resin or a silicone resin. In this example, the resin member 36 includes a portion of the resin layer 30 facing the second surface 30fb (a part 36c of the resin layer 30).

As shown in FIG. 1, after the step of forming the resin member (step S160), the portion of the resin layer 30 including the second surface 30fb is removed (step S170). For example, as shown in FIG. 8, a part 36c (a portion facing the second surface 30fb) of the resin member 36 is removed from the state of FIG. 7. Then, in this example, a part of the resin member 36 is removed until the side surface facing region 40sp is exposed. As a result, the resin member is not located on the side facing region 40sp, and the light propagating in the resin member does not exist. As a result, it is possible to suppress the light spreading in the second direction D2 (see FIG. 2) of the light emitting device and improve the "parting off". The front brightness can be increased. Part of the resin member 36 can be removed by, for example, grinding (including CMP or the like).

In this way, the light emitting device 110 is obtained. In the light emitting device 110, for example, high light extraction efficiency can be obtained by the side surface facing region 40sp.

In the light emitting device 110, the length 40t (thickness, see FIG. 12) of the side surface facing region 40sp along the second direction D2 is, for example, 0.5 μm or more and 3 μm or less. The length 40h (height, see FIG. 12) of the side surface facing region 40sp along the first direction D1 is, for example, 50 μm or more and 200 μm or less. These numerical values are examples and may be changed as appropriate.

In the manufacturing method according to the present embodiment, the side surface facing region 40sp of the reflective film 40 does not overlap with the semiconductor laminate 20 in the first direction D1 (Z-axis direction) (see FIG. 6). In the side facing region 40sp, the light from the semiconductor laminate 20 outside the first surface 20fa of the semiconductor laminate 20 in the XY plane is mainly from the first surface 20fa of the semiconductor laminate 20 in the first direction D1. It emits to. Since the side facing region 40sp is outside the first surface 20fa in the XY plane, the light emitted from the first surface 20fa is not obstructed by the side facing region 40sp, so that the semiconductor laminate 20 efficiently Light can be taken out.

As shown in FIG. 2, the outer edge of the silicon substrate 10 is preferably outside the outer edge of the semiconductor laminate 20. As shown in FIG. 2, for example, the semiconductor laminate 20 includes a first end portion 20a and a second end portion 20b. The second direction D2 from the first end 20a to the second end 20b is perpendicular to the first direction D1 (Z-axis direction). The second direction D2 is, for example, the X-axis direction. The silicon substrate 10 includes a third end portion 10c and a fourth end portion 10d. The direction from the third end 10c to the fourth end 10d is along the second direction D2. For example, the direction from the third end 10c to the fourth end 10d is parallel to the second direction D2. In the second direction D2, the first end 20a and the second end 20b are between the third end 10c and the fourth end 10d.

By having both ends of the silicon substrate 10 outside both ends of the semiconductor laminate 20, for example, light can be efficiently extracted.

Since the outer edge of the silicon substrate 10 is outside the outer edge of the semiconductor laminate 20, for example, when the silicon substrate 10 is removed, the reflective film 40 is formed on the outside of the region where the semiconductor laminate 20 is provided. Area can be secured.

As shown in FIG. 1, in the present embodiment, the rough surface on the first surface 20fa is between the step of exposing the first surface 20fa (step S120) and the step of forming the reflective film 40 (step S130). The step of performing processing (step S125) may be carried out.

FIG. 9 is a schematic cross-sectional view illustrating the method for manufacturing the light emitting device according to the first embodiment.
As shown in FIG. 9, after the first surface 20fa is exposed, the first surface 20fa is roughened. As a result, unevenness 20 tp is formed on the first surface 20 fa. The height 20h of the unevenness 20dp is, for example, 1 nm or more and 3 nm or less. The height 20h of the unevenness 20dp corresponds to the distance between the top of the unevenness 20dp and the bottom of the unevenness 20dp. This distance is, for example, a distance along the first direction D1.

The unevenness of 20 dp can be formed by, for example, wet etching or dry etching. The rough surface processing corresponds to making the height 20h of the unevenness 20 tp after the rough surface processing larger than the height 20 h of the uneven surface 20 dm before the rough surface processing.

By forming the unevenness 20 tp on the first surface 20 fa which is the light emitting surface, the light extraction efficiency is further improved.

Hereinafter, an example of the reflective film 40 will be described.
FIG. 10 is a schematic cross-sectional view illustrating a part of the light emitting device according to the first embodiment.
As shown in FIG. 10, the reflective film 40 includes a plurality of first film 41 and a plurality of second film 42 provided alternately. The refractive index of one of the plurality of first films 41 is different from the refractive index of one of the plurality of second films 42. For example, the reflective film 40 includes a plurality of first film 41 and a second film 42. The second film 42 is provided between one of the plurality of first films 41 and another one of the plurality of first films 41.

The first film 41 and the second film 42 are, for example, dielectric films. The first film 41 and the second film 42 include oxides (for example, metal oxides) and the like. For example, the first film 41 contains the first element and oxygen. The second film 42 contains a second element and oxygen. The first element is different from the second element. The reflective film 40 is, for example, a DBR (Distributed Bragg Reflector). With such a configuration, high reflectance can be obtained. High stability is obtained in terms of optical characteristics. High durability can be obtained.

FIG. 11 is a schematic cross-sectional view illustrating a part of the light emitting device according to the first embodiment.
As shown in FIG. 11, the reflective film 40 includes a metal film 45 and a dielectric film 46. The metal film 45 is provided between the dielectric film 46 and the side surface 30s of the resin layer 30. The metal film 45 contains, for example, at least one selected from the group consisting of Ag, Al and Rh. The dielectric film 46 contains, for example, silicon oxide and the like. Even in such a configuration, high reflectance can be obtained.

(Second Embodiment)
The second embodiment relates to a light emitting device.
FIG. 12 is a schematic cross-sectional view illustrating the light emitting device according to the second embodiment.
As shown in FIG. 12, the light emitting device 110 according to the embodiment includes the semiconductor laminate 20, the resin layer 30, and the reflective film 40.

The semiconductor laminate 20 includes a first conductive type first semiconductor layer 21, a second conductive type second semiconductor layer 22, and a light emitting layer 23. The light emitting layer 23 is provided between the first semiconductor layer 21 and the second semiconductor layer 22. For example, the first conductive type is n-type and the second conductive type is p-type. These semiconductor layers include, for example, gallium and nitrogen. The semiconductor laminate 20 is made of, for example, a nitride semiconductor.

The direction from the second semiconductor layer 22 to the first semiconductor layer 21 is defined as the first direction D1. The first direction D1 is, for example, along the Z-axis direction.

The resin layer 30 includes the first to sixth partial regions pr1 to pr6. In the second direction D2, the semiconductor laminate 20 is provided between the first partial region pr1 and the second partial region pr2. The second direction D2 intersects the first direction D1. For example, the second direction D2 intersects the first direction D1. For example, the second direction D2 is perpendicular to the first direction D1. The second direction D2 is, for example, the X-axis direction.

In the second direction D2, a third partial region pr3 is provided between the first partial region pr1 and the semiconductor laminate 20. In the second direction D2, a fourth partial region pr4 is provided between the second partial region pr2 and the semiconductor laminate 20. The direction from the first partial region pr1 to the fifth partial region pr5 is along the first direction D1 (Z-axis direction). The direction from the second partial region pr2 to the sixth partial region pr6 is along the first direction D1 (Z-axis direction). The first to sixth partial regions pr1 to pr6 correspond to the first to sixth positions in the resin layer 30. The first to sixth subregions pr1 to pr6 are continuous with each other.

The reflective film 40 includes a first region 41p and a second region 42p. The direction from the third partial region pr3 to the first region 41p is along the first direction D1 (Z-axis direction). The direction from the fourth partial region pr4 to the second region 42p is along the first direction D1.

In the light emitting device 110 according to the embodiment, the reflection film 40 is provided so that the light emitted from the semiconductor laminate 20 is effectively reflected by the reflection film 40. The efficiency of light extraction can be improved. According to the embodiment, a highly efficient light emitting device can be provided.

The fifth partial region pr5 includes a first facing surface 38fa facing the first region 41p. For example, the first facing surface 38fa is along the first direction D1. For example, the first facing surface 38fa is substantially parallel to the first direction D1.

The sixth partial region pr6 includes a second facing surface 38fb facing the second region 42p. For example, the second facing surface 38fb is along the first direction D1. For example, the second facing surface 38fb is substantially parallel to the first direction D1.

Since the first facing surface 38fa and the second facing surface 38fb are along the first direction D1, the reflective film 40 can be easily formed. For example, the surface of the reflective film 40 is along the first direction D1. Light can be reflected by the reflective film 40, and light can be efficiently extracted.

In the light emitting device 110, the length (thickness) of the first region 41p and the second region 42p along the second direction D2 is, for example, 0.5 μm or more and 3 μm or less. The length (height) of the first region 41p and the second region 42p along the first direction D1 is, for example, 50 μm or more and 200 μm or less.

As shown in FIG. 12, the light emitting device 110 may further include a wavelength conversion member 35. The wavelength conversion member 35 is located between the first region 41p and the second region 42p in the second direction D2.

A resin member 36 may be further provided. In the first direction D1, a wavelength conversion member 35 is provided between the semiconductor laminate 20 and the resin member 36. A support member 60 may be further provided in the light emitting device 110.

In the light emitting device 110 according to the second embodiment, the configuration described with respect to the first embodiment may be applied.

For example, in the light emitting device 110, the length 40t (thickness) of the side surface facing region 40sp along the second direction D2 is, for example, 0.5 μm or more and 3 μm or less. The length 40h (height) of the side facing region 40sp along the first direction D1 is, for example, 50 μm or more and 200 μm or less.

For example, there is a configuration in which a resin layer containing titanium oxide or the like is provided as a light reflecting member on the side surface of the light emitting element to improve the light extraction efficiency. The thicker the resin layer, the greater the light absorption in the resin layer. Further, when a thick resin layer is provided, it becomes difficult to miniaturize the light emitting device. On the other hand, when the resin layer is made thin, the size can be reduced, but light passes through the resin layer and high reflectance cannot be obtained.

In the present embodiment, for example, the reflective film 40 is provided on the side surface 30s of the resin layer 30. The reflective film 40 can be selectively provided with high accuracy. Since high reflectance can be obtained by the reflective film 40, a light emitting device having high light extraction efficiency can be manufactured even if the resin layer provided on the side surface of the light emitting element is thinned. Therefore, according to the present embodiment, it is possible to accurately manufacture a miniaturized light emitting device having high light extraction efficiency.

According to the embodiment, it is possible to provide a method for manufacturing a highly efficient light emitting device.

In the specification of the present application, "vertical" and "parallel" include not only strict vertical and strict parallel, but also variations in the manufacturing process, for example, and are substantially vertical or substantially parallel. All you need is.

The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, with respect to the specific configurations of the semiconductor laminate, the resin layer, the reflective film member, the wavelength conversion member, and the like included in the light emitting device, the present invention can be similarly described by appropriately selecting from a range known to those skilled in the art. It is included in the scope of the present invention as long as it can be carried out and the same effect can be obtained.

Further, a combination of any two or more elements of each specific example to the extent technically possible is also included in the scope of the present invention as long as the gist of the present invention is included.

10 ... Silicon substrate, 10c, 10d ... 3rd, 4th end, 10fc ... 3rd surface, 10fd ... 4th surface, 15 ... Structure, 20 ... Semiconductor laminate, 20E, 20F ... 1st, 2nd elements Electrodes, 20a, 20b ... 1st and 2nd ends, 20dp ... Concavo-convex, 20fa ... 1st surface, 20fc ... Opposing surface, 20h ... Height, 21, 22 ... 1st and 2nd semiconductor layers, 23 ... Light emitting layer , 30 ... resin layer, 30fb ... second surface, 30s ... side surface, 31 ... first region, 35 ... wavelength conversion member, 36 ... resin member, 36c ... part, 38fa, 38fb ... first, second facing surface, 40 ... Reflective film, 40fp, 40fp ... First, second surface facing region, 40h, 40t ... Length, 40sp ... Side facing area, 41, 42 ... First, second film, 41p, 42p ... First, first 2 regions, 45 ... metal film, 46 ... dielectric film, 51, 52 ... first and second electrodes, 51C, 52C ... first and second connecting members, 60 ... support members, θ1, θ2 ... angles, 110 ... Light emitting device, D1, D2 ... 1st and 2nd directions, R1 ... region, pr1 to pr6 ... 1st to 6th subregions

Claims (9)

A step of forming a resin layer including a side surface facing the silicon substrate around a structure including a silicon substrate and a semiconductor laminate including a first surface in contact with the silicon substrate.
A step of removing the silicon substrate to expose the first surface of the semiconductor laminate from the resin layer,
A step of forming a reflective film on the first surface and the side surface of the resin layer, which includes a first surface facing region facing the first surface and a side facing region facing the side surface.
A step of removing the first surface facing region of the reflective film and performing anisotropic etching to leave at least a part of the side facing region of the reflective film.
With
A method for manufacturing a light emitting device, wherein at least a part of a side surface of the resin layer is substantially perpendicular to the first surface in the step of forming the reflective film. The resin layer further includes a second surface that does not overlap with the silicon substrate in the first direction from the semiconductor laminate to the silicon substrate.
In the step of forming the reflective film, the reflective film further includes a second surface facing region facing the second surface.
The method for manufacturing a light emitting device according to claim 1, wherein the second surface facing region is further removed in the step of performing the anisotropic etching. The method for manufacturing a light emitting device according to claim 2, wherein the side surface facing region is continuous with the first surface facing region and the second surface facing region. The method for manufacturing a light emitting device according to claim 2 or 3, wherein the side facing region does not overlap with the semiconductor laminate in the first direction. The semiconductor laminate includes a first end portion and a second end portion, and a second direction from the first end portion to the second end portion is perpendicular to the first direction.
The silicon substrate includes a third end portion and a fourth end portion, and the direction from the third end portion to the fourth end portion is parallel to the second direction.
The light emission according to any one of claims 2 to 4, wherein in the second direction, the first end portion and the second end portion are located between the third end portion and the fourth end portion. Manufacturing method of the device. The silicon substrate includes a third surface and a fourth surface.
The third surface is in contact with the first surface.
The third surface is between the first surface and the fourth surface.
The step of forming the resin layer includes covering the fourth surface with the resin layer.
The resin layer includes a first region covering the fourth surface.
The method for manufacturing a light emitting device according to any one of claims 2 to 5, wherein the step of exposing the first surface includes removing the first region to expose the silicon substrate. Any one of claims 1 to 6, further comprising a step of forming a wavelength conversion member in at least a part of a region formed by removing the silicon substrate after the step of performing the anisotropic etching. The method for manufacturing a light emitting device according to. The method according to any one of claims 1 to 7, further comprising a step of roughening the first surface between the step of exposing the first surface and the step of forming the reflective film. How to manufacture a light emitting device. The silicon substrate includes a third surface in contact with the first surface.
The method for manufacturing a light emitting device according to any one of claims 1 to 8, wherein at least a part of the side surface is substantially perpendicular to the third surface.

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