JP7269327B2 - 加熱素子が埋め込まれた基板支持体のための長寿命高出力端子 - Google Patents

加熱素子が埋め込まれた基板支持体のための長寿命高出力端子 Download PDF

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JP7269327B2
JP7269327B2 JP2021514006A JP2021514006A JP7269327B2 JP 7269327 B2 JP7269327 B2 JP 7269327B2 JP 2021514006 A JP2021514006 A JP 2021514006A JP 2021514006 A JP2021514006 A JP 2021514006A JP 7269327 B2 JP7269327 B2 JP 7269327B2
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Prior art keywords
substrate support
cte
connection terminal
contact plate
ceramic layer
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Japanese (ja)
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JP2022500865A5 (https=
JP2022500865A (ja
Inventor
ティアン・シユアン
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Lam Research Corp
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Lam Research Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3341—Reactive etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Resistance Heating (AREA)
JP2021514006A 2018-09-20 2019-09-17 加熱素子が埋め込まれた基板支持体のための長寿命高出力端子 Active JP7269327B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023069698A JP7611957B2 (ja) 2018-09-20 2023-04-21 加熱素子が埋め込まれた基板支持体のための長寿命高出力端子

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/136,799 US10957520B2 (en) 2018-09-20 2018-09-20 Long-life high-power terminals for substrate support with embedded heating elements
US16/136,799 2018-09-20
PCT/US2019/051477 WO2020061019A1 (en) 2018-09-20 2019-09-17 Long-life high-power terminals for substrate support with embedded heating elements

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023069698A Division JP7611957B2 (ja) 2018-09-20 2023-04-21 加熱素子が埋め込まれた基板支持体のための長寿命高出力端子

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JP2022500865A JP2022500865A (ja) 2022-01-04
JP2022500865A5 JP2022500865A5 (https=) 2023-01-31
JP7269327B2 true JP7269327B2 (ja) 2023-05-08

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JP2021514006A Active JP7269327B2 (ja) 2018-09-20 2019-09-17 加熱素子が埋め込まれた基板支持体のための長寿命高出力端子
JP2023069698A Active JP7611957B2 (ja) 2018-09-20 2023-04-21 加熱素子が埋め込まれた基板支持体のための長寿命高出力端子

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US (1) US10957520B2 (https=)
JP (2) JP7269327B2 (https=)
KR (2) KR102730610B1 (https=)
WO (1) WO2020061019A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10186437B2 (en) * 2015-10-05 2019-01-22 Lam Research Corporation Substrate holder having integrated temperature measurement electrical devices
US11158488B2 (en) * 2019-06-26 2021-10-26 Mks Instruments, Inc. High speed synchronization of plasma source/bias power delivery
CN115103929A (zh) * 2020-02-18 2022-09-23 朗姆研究公司 具有散热器的高温衬底支撑件
US12300474B2 (en) * 2020-10-15 2025-05-13 Applied Materials, Inc. Semiconductor substrate support power transmission components
CN115985771B (zh) * 2023-03-21 2023-07-04 淄博美林电子有限公司 具有复合功能的igbt芯片结构的制备方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001319756A (ja) 2000-05-09 2001-11-16 Ibiden Co Ltd セラミック基板
US20020075624A1 (en) 1999-05-07 2002-06-20 Applied Materials, Inc. Electrostatic chuck bonded to base with a bond layer and method
JP2006295138A (ja) 2005-03-16 2006-10-26 Tokyo Electron Ltd 基板加熱機能を有する基板載置機構および基板処理装置
JP2011142302A (ja) 2009-12-11 2011-07-21 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
JP2012216786A (ja) 2011-03-31 2012-11-08 Ngk Insulators Ltd 半導体製造装置用部材
JP2013239575A (ja) 2012-05-15 2013-11-28 Tokyo Electron Ltd 載置台、及びプラズマ処理装置
US20140069585A1 (en) 2012-09-07 2014-03-13 Tokyo Electron Limited Plasma etching apparatus
JP2015002300A (ja) 2013-06-17 2015-01-05 株式会社Maruwa 接合構造体及びこれを用いた半導体製造装置
US20170062260A1 (en) 2013-08-05 2017-03-02 Applied Materials, Inc. In-situ removable electrostatic chuck
JP2017153254A (ja) 2016-02-25 2017-08-31 京セラ株式会社 半導体製造装置用部品

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EP0834652B1 (en) * 1996-04-10 2004-10-13 Denso Corporation Glow plug, its production process and ion current detector
JP2003273177A (ja) * 1999-08-09 2003-09-26 Ibiden Co Ltd 半導体製造・検査装置用セラミック基板
JP2001144167A (ja) * 1999-11-12 2001-05-25 Ngk Insulators Ltd 半導体保持装置
JP2001223261A (ja) * 2000-02-07 2001-08-17 Hitachi Ltd 静電チャック及び静電吸着装置
JP4184829B2 (ja) * 2003-02-25 2008-11-19 京セラ株式会社 静電チャックの製造方法
JP4421595B2 (ja) * 2006-11-16 2010-02-24 日本碍子株式会社 加熱装置
JP5496630B2 (ja) 2009-12-10 2014-05-21 東京エレクトロン株式会社 静電チャック装置
JP6441921B2 (ja) * 2014-06-27 2018-12-19 日本碍子株式会社 接合構造体
US20160168687A1 (en) 2014-12-14 2016-06-16 Applied Materials, Inc. Particle reduction in a deposition chamber using thermal expansion coefficient compatible coating
US10612121B2 (en) * 2016-03-14 2020-04-07 Applied Materials, Inc. Plasma resistant coating with tailorable coefficient of thermal expansion

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020075624A1 (en) 1999-05-07 2002-06-20 Applied Materials, Inc. Electrostatic chuck bonded to base with a bond layer and method
JP2001319756A (ja) 2000-05-09 2001-11-16 Ibiden Co Ltd セラミック基板
JP2006295138A (ja) 2005-03-16 2006-10-26 Tokyo Electron Ltd 基板加熱機能を有する基板載置機構および基板処理装置
JP2011142302A (ja) 2009-12-11 2011-07-21 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
JP2012216786A (ja) 2011-03-31 2012-11-08 Ngk Insulators Ltd 半導体製造装置用部材
JP2013239575A (ja) 2012-05-15 2013-11-28 Tokyo Electron Ltd 載置台、及びプラズマ処理装置
US20140069585A1 (en) 2012-09-07 2014-03-13 Tokyo Electron Limited Plasma etching apparatus
JP2015002300A (ja) 2013-06-17 2015-01-05 株式会社Maruwa 接合構造体及びこれを用いた半導体製造装置
US20170062260A1 (en) 2013-08-05 2017-03-02 Applied Materials, Inc. In-situ removable electrostatic chuck
JP2017153254A (ja) 2016-02-25 2017-08-31 京セラ株式会社 半導体製造装置用部品

Also Published As

Publication number Publication date
US20200098551A1 (en) 2020-03-26
KR102730610B1 (ko) 2024-11-14
WO2020061019A1 (en) 2020-03-26
JP2023099050A (ja) 2023-07-11
KR20230125349A (ko) 2023-08-29
US10957520B2 (en) 2021-03-23
JP2022500865A (ja) 2022-01-04
JP7611957B2 (ja) 2025-01-10
KR20210047957A (ko) 2021-04-30
KR102570498B1 (ko) 2023-08-23

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