JP7268986B2 - 整流性を有する素子と薄膜トランジスタとを含む装置 - Google Patents
整流性を有する素子と薄膜トランジスタとを含む装置 Download PDFInfo
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14616—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
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- H01L27/144—Devices controlled by radiation
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- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H10B—ELECTRONIC MEMORY DEVICES
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- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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Description
以下において、他の構成例を説明する。図10は、画素102の他の構成例を示す。以下では、図4の構成との相違点を主に説明する。薄膜トランジスタ104の制御電極331は、フォトダイオード103の下部電極308よりも下層の金属層であり、制御電極331は、下部電極308よりも、酸化物半導体層304に近い層である。
Claims (12)
- 上部電極から下部電極への順方向の整流性を有する第1素子と、
半導体膜、ゲート電極、第1信号電極及び第2信号電極を含む、Nチャネル薄膜トランジスタと、
前記半導体膜を挟んで、前記ゲート電極と対向する制御電極と、
を含み、
前記第2信号電極と前記下部電極が接続され、
前記制御電極と前記下部電極が接続され、
平面視において、前記半導体膜の前記第1信号電極側の第1チャネル端の少なくとも一部は、前記制御電極と重なっており、
平面視において、前記半導体膜の前記第2信号電極側の第2チャネル端は、前記制御電極から離間している、
装置。 - 下部電極から上部電極への順方向の整流性を有する第1素子と、
半導体膜、ゲート電極、第1信号電極及び第2信号電極を含む、Nチャネル薄膜トランジスタと、
前記半導体膜を挟んで、前記ゲート電極と対向する制御電極と、
を含み、
前記第2信号電極と前記下部電極が接続され、
前記制御電極と前記第1信号電極が接続され、
平面視において、前記半導体膜の前記第1信号電極側の第1チャネル端は、前記制御電極から離間しており、
平面視において、前記半導体膜の前記第2信号電極側の第2チャネル端の少なくとも一部は、前記制御電極と重なっている、
装置。 - 請求項1又は2に記載の装置であって、
前記第1素子はフォトダイオードである、
装置。 - 請求項1又は2に記載の装置であって、
前記半導体膜は、酸化物半導体膜である、
装置。 - 請求項1又は2に記載の装置であって、
前記ゲート電極は、前記半導体膜の下側に配置されている、
装置。 - 請求項1に記載の装置であって、
前記制御電極は、平面視において、前記第1チャネル端の全域と重なっている。
装置。 - 請求項2に記載の装置であって、
前記制御電極は、平面視において、前記第2チャネル端の全域と重なっている。
装置。 - 請求項1に記載の装置であって、
前記制御電極の前記第2チャネル端側の端は、前記第2チャネル端よりも前記第1チャ
ネル端に近い、
装置。 - 請求項2に記載の装置であって、
前記制御電極の前記第1チャネル端側の端は、前記第1チャネル端よりも前記第2チャネル端に近い、
装置。 - 請求項1又は2に記載の装置であって、
前記制御電極及び前記下部電極は、同一材料で構成され、同一層位置に配置されている、
装置。 - 請求項1に記載の装置であって、
前記制御電極は、前記下部電極の層と前記第1信号電極の層との間の層に配置されている、
装置。 - 請求項2に記載の装置であって、
前記制御電極は、前記下部電極の層と前記第2信号電極の層との間の層に配置されている、
装置。
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JP2018189931A JP7268986B2 (ja) | 2018-10-05 | 2018-10-05 | 整流性を有する素子と薄膜トランジスタとを含む装置 |
CN201910938047.5A CN111009539B (zh) | 2018-10-05 | 2019-09-30 | 图像传感器装置 |
US16/587,349 US10991732B2 (en) | 2018-10-05 | 2019-09-30 | Device including element having rectification characteristics and thin film transistor |
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JP2018189931A JP7268986B2 (ja) | 2018-10-05 | 2018-10-05 | 整流性を有する素子と薄膜トランジスタとを含む装置 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050242718A1 (en) | 2004-04-29 | 2005-11-03 | Lg.Philips Lcd Co. Ltd. | Organic electroluminescent display device and method of fabricating the same |
JP2008505496A (ja) | 2004-07-01 | 2008-02-21 | バリアン・メディカル・システムズ・テクノロジーズ・インコーポレイテッド | 連続した膜を使用する集積されたmis光電性デバイス |
JP2010521816A (ja) | 2007-03-16 | 2010-06-24 | バリアン・メディカル・システムズ・インコーポレイテッド | 連続した膜を使用する集積されたmis光電性デバイス |
JP2013191837A (ja) | 2012-02-15 | 2013-09-26 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2013243355A (ja) | 2012-04-25 | 2013-12-05 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2016154229A (ja) | 2015-02-12 | 2016-08-25 | 株式会社半導体エネルギー研究所 | 半導体装置、または該半導体装置を有する表示装置 |
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JPH06177417A (ja) * | 1992-12-04 | 1994-06-24 | Hitachi Ltd | ホトトランジスタ及びラインイメージセンサ |
JP4203783B2 (ja) * | 2000-09-13 | 2009-01-07 | カシオ計算機株式会社 | 2次元画像読取装置 |
JP2004087682A (ja) * | 2002-08-26 | 2004-03-18 | Chi Mei Electronics Corp | 薄膜トランジスタ、画像表示素子および画像表示装置 |
US7148487B2 (en) | 2002-08-27 | 2006-12-12 | Canon Kabushiki Kaisha | Image sensing apparatus and method using radiation |
KR102279274B1 (ko) * | 2014-11-05 | 2021-07-21 | 엘지디스플레이 주식회사 | 디지털 엑스레이 검출기용 박막 트랜지스터 어레이 기판 |
DE112016004928B4 (de) * | 2015-10-29 | 2020-08-06 | Mitsubishi Electric Corporation | Dünnschichttransistor-Substrat |
US9806197B1 (en) * | 2016-07-13 | 2017-10-31 | Innolux Corporation | Display device having back gate electrodes |
-
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- 2018-10-05 JP JP2018189931A patent/JP7268986B2/ja active Active
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2019
- 2019-09-30 US US16/587,349 patent/US10991732B2/en active Active
- 2019-09-30 CN CN201910938047.5A patent/CN111009539B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050242718A1 (en) | 2004-04-29 | 2005-11-03 | Lg.Philips Lcd Co. Ltd. | Organic electroluminescent display device and method of fabricating the same |
JP2008505496A (ja) | 2004-07-01 | 2008-02-21 | バリアン・メディカル・システムズ・テクノロジーズ・インコーポレイテッド | 連続した膜を使用する集積されたmis光電性デバイス |
JP2010521816A (ja) | 2007-03-16 | 2010-06-24 | バリアン・メディカル・システムズ・インコーポレイテッド | 連続した膜を使用する集積されたmis光電性デバイス |
JP2013191837A (ja) | 2012-02-15 | 2013-09-26 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP2013243355A (ja) | 2012-04-25 | 2013-12-05 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2016154229A (ja) | 2015-02-12 | 2016-08-25 | 株式会社半導体エネルギー研究所 | 半導体装置、または該半導体装置を有する表示装置 |
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US20200111824A1 (en) | 2020-04-09 |
US10991732B2 (en) | 2021-04-27 |
JP2020061402A (ja) | 2020-04-16 |
CN111009539A (zh) | 2020-04-14 |
CN111009539B (zh) | 2024-05-03 |
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