JP7264984B2 - 二相作業物質を使用する非化学電池 - Google Patents
二相作業物質を使用する非化学電池 Download PDFInfo
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- JP7264984B2 JP7264984B2 JP2021500011A JP2021500011A JP7264984B2 JP 7264984 B2 JP7264984 B2 JP 7264984B2 JP 2021500011 A JP2021500011 A JP 2021500011A JP 2021500011 A JP2021500011 A JP 2021500011A JP 7264984 B2 JP7264984 B2 JP 7264984B2
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- 239000008207 working material Substances 0.000 title claims description 69
- 239000000126 substance Substances 0.000 title claims description 47
- 230000007704 transition Effects 0.000 claims description 57
- 238000004146 energy storage Methods 0.000 claims description 43
- 229910052760 oxygen Inorganic materials 0.000 claims description 28
- 239000001301 oxygen Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 19
- 230000005291 magnetic effect Effects 0.000 claims description 19
- 238000012546 transfer Methods 0.000 claims description 16
- 238000006243 chemical reaction Methods 0.000 claims description 14
- 230000005684 electric field Effects 0.000 claims description 12
- -1 oxygen ions Chemical class 0.000 claims description 6
- 238000007599 discharging Methods 0.000 claims description 4
- 239000013626 chemical specie Substances 0.000 claims 3
- 239000010410 layer Substances 0.000 description 93
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 64
- 229910052751 metal Inorganic materials 0.000 description 39
- 239000002184 metal Substances 0.000 description 39
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 34
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 27
- 239000012212 insulator Substances 0.000 description 23
- 239000000463 material Substances 0.000 description 23
- 230000008859 change Effects 0.000 description 21
- 150000002500 ions Chemical class 0.000 description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 18
- 125000004429 atom Chemical group 0.000 description 15
- 230000033001 locomotion Effects 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 13
- 150000002739 metals Chemical class 0.000 description 11
- 230000006870 function Effects 0.000 description 10
- 230000010287 polarization Effects 0.000 description 10
- 239000002772 conduction electron Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 229910052720 vanadium Inorganic materials 0.000 description 9
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 8
- 238000013461 design Methods 0.000 description 8
- 238000006073 displacement reaction Methods 0.000 description 8
- 230000005294 ferromagnetic effect Effects 0.000 description 8
- 229910052742 iron Inorganic materials 0.000 description 8
- 229910052719 titanium Inorganic materials 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 7
- 239000000956 alloy Substances 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 230000009466 transformation Effects 0.000 description 7
- 229910000859 α-Fe Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 238000004549 pulsed laser deposition Methods 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 239000011232 storage material Substances 0.000 description 5
- 229910017090 AlO 2 Inorganic materials 0.000 description 4
- 229910017771 LaFeO Inorganic materials 0.000 description 4
- 235000021028 berry Nutrition 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000005283 ground state Effects 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- 230000000737 periodic effect Effects 0.000 description 4
- 239000011780 sodium chloride Substances 0.000 description 4
- 230000002269 spontaneous effect Effects 0.000 description 4
- 239000002887 superconductor Substances 0.000 description 4
- 230000032258 transport Effects 0.000 description 4
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 3
- 241000009328 Perro Species 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 230000005290 antiferromagnetic effect Effects 0.000 description 3
- 229910001566 austenite Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 150000001768 cations Chemical class 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- LIKBJVNGSGBSGK-UHFFFAOYSA-N iron(3+);oxygen(2-) Chemical class [O-2].[O-2].[O-2].[Fe+3].[Fe+3] LIKBJVNGSGBSGK-UHFFFAOYSA-N 0.000 description 3
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 3
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- 229910001416 lithium ion Inorganic materials 0.000 description 3
- 229910052748 manganese Inorganic materials 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- 238000005381 potential energy Methods 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 238000012216 screening Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052723 transition metal Inorganic materials 0.000 description 3
- 150000003624 transition metals Chemical class 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- 229910002967 CaCu3Fe4O12 Inorganic materials 0.000 description 2
- 206010021143 Hypoxia Diseases 0.000 description 2
- 229920001074 Tenite Polymers 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 125000002091 cationic group Chemical group 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000005090 crystal field Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005674 electromagnetic induction Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000002803 fossil fuel Substances 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 229910052595 hematite Inorganic materials 0.000 description 2
- 239000011019 hematite Substances 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 230000037427 ion transport Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 230000005381 magnetic domain Effects 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- FQXXSQDCDRQNQE-UHFFFAOYSA-N markiertes Thebain Natural products COC1=CC=C2C(N(CC3)C)CC4=CC=C(OC)C5=C4C23C1O5 FQXXSQDCDRQNQE-UHFFFAOYSA-N 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000005555 metalworking Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002070 nanowire Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- QKQQEIVDLRUZRP-UHFFFAOYSA-N northebaine Natural products COC1=CC=C2C(NCC3)CC4=CC=C(OC)C5=C4C23C1O5 QKQQEIVDLRUZRP-UHFFFAOYSA-N 0.000 description 2
- 230000005298 paramagnetic effect Effects 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910000938 samarium–cobalt magnet Inorganic materials 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000000844 transformation Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- QDNXSIYWHYGMCD-UHFFFAOYSA-N 2-(methylamino)-1-(3-methylphenyl)propan-1-one Chemical compound CNC(C)C(=O)C1=CC=CC(C)=C1 QDNXSIYWHYGMCD-UHFFFAOYSA-N 0.000 description 1
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910002515 CoAl Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 241000270878 Hyla Species 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910002321 LaFeO3 Inorganic materials 0.000 description 1
- 229910012851 LiCoO 2 Inorganic materials 0.000 description 1
- 229910014669 LiMnN Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910009973 Ti2O3 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 239000011260 aqueous acid Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical group [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 239000011532 electronic conductor Substances 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000005288 gauge theory Methods 0.000 description 1
- 229910001291 heusler alloy Inorganic materials 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 235000003642 hunger Nutrition 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 239000010416 ion conductor Substances 0.000 description 1
- SZVJSHCCFOBDDC-UHFFFAOYSA-N iron(II,III) oxide Inorganic materials O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000003350 kerosene Substances 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000010405 reoxidation reaction Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 229910001285 shape-memory alloy Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000037351 starvation Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- GQUJEMVIKWQAEH-UHFFFAOYSA-N titanium(III) oxide Chemical compound O=[Ti]O[Ti]=O GQUJEMVIKWQAEH-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
- 229910021489 α-quartz Inorganic materials 0.000 description 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/362—Composites
- H01M4/364—Composites as mixtures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/36—Accumulators not provided for in groups H01M10/05-H01M10/34
- H01M10/38—Construction or manufacture
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
- H10N70/235—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect between different crystalline phases, e.g. cubic and hexagonal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
- H01M10/425—Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/48—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides
- H01M4/485—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of mixed oxides or hydroxides for inserting or intercalating light metals, e.g. LiTi2O4 or LiTi2OxFy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/48—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides
- H01M4/52—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron
- H01M4/525—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M6/00—Primary cells; Manufacture thereof
- H01M6/14—Cells with non-aqueous electrolyte
- H01M6/18—Cells with non-aqueous electrolyte with solid electrolyte
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M8/00—Fuel cells; Manufacture thereof
- H01M8/10—Fuel cells with solid electrolytes
- H01M8/1016—Fuel cells with solid electrolytes characterised by the electrolyte material
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N11/00—Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means
- H02N11/002—Generators
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M2004/021—Physical characteristics, e.g. porosity, surface area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/42—Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
- H01M10/425—Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing
- H01M2010/4271—Battery management systems including electronic circuits, e.g. control of current or voltage to keep battery in healthy state, cell balancing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M2300/00—Electrolytes
- H01M2300/0088—Composites
- H01M2300/0094—Composites in the form of layered products, e.g. coatings
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/50—Fuel cells
-
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Description
本出願は、2018年3月16日に出願した米国仮特許出願第62/644,068号、名称「NON-CHEMICAL ELECTRIC BATTERY USING TWO-PHASE WORKING MATERIAL」の優先利益を主張するものであり、その開示が本明細書に組み込まれている。
110 左の端子
120 領域
130 磁区壁
140 領域
150 右の端子
200 相転移電池
210 金属端子、接点、電極
220 部分
230 相壁
240 部分
250 金属端子、接点、第2の電極
300 グラフ
400 構造
500 構造
510 端子
520 端子
530 層
540 層
550 層
560 層
590 相区壁
610 電池
620 電池充電回路
630 負荷回路、負荷回路システム
910 水素インターカレートされたHyLa1-xSrxFeO3-x/2
920 酸素がドープされた同じ材料La1-xSrxFeO3-y
930 相壁
940 水素
950 酸素
Claims (19)
- 電気エネルギー貯蔵デバイスであって、前記電気エネルギー貯蔵デバイスの充電中に、電気エネルギーを前記電気エネルギー貯蔵デバイスに加え、前記電気エネルギー貯蔵デバイスの放電中に、電気エネルギーを前記電気エネルギー貯蔵デバイスから抽出するように構成され、
第1の相および第1のエネルギー密度を有する作業物質の第1の部分と、
前記第1のエネルギー密度と異なる第2のエネルギー密度とともに第2の相を有する前記作業物質の第2の部分と、
前記作業物質の前記第1の部分と前記第2の部分とを物理的に分離する相壁であって、前記作業物質が前記第1の相と前記第2の相との間の相転移を受けるとき、前記相壁は移動する、相壁と、
前記作業物質の前記第1の部分と前記第2の部分とを接続する外部電気回路と、を備え、
前記電気エネルギー貯蔵デバイスが、電源から充電され、次いで電気的負荷に放電されるように構成された、電気エネルギー貯蔵デバイス。 - 前記作業物質は、外部電気回路の第1の端子が第1のプリズム面に接続され、前記外部電気回路の第2の端子が第2のプリズム面に接続されているプリズムであり、前記相壁の表面は、前記第1のプリズム面と前記第2のプリズム面との間にある、請求項1に記載の電気エネルギー貯蔵デバイス。
- 外部電気回路の第1の端部を前記作業物質の第1の部分と結合し、外部電気回路の第2の端部を前記作業物質の第2の部分と接続する、請求項1に記載の電気エネルギー貯蔵デバイス。
- 前記第1の部分、前記第2の部分、および前記相壁は、同じ化学物質のものである、請求項1に記載の電気エネルギー貯蔵デバイス。
- 前記第1の相は第1の結晶構造を有し、前記第2の相は前記第1の結晶構造と異なる第2の結晶構造を有し、前記第1の結晶構造は、前記相壁内で前記第2の結晶構造に変形する、請求項1に記載の電気エネルギー貯蔵デバイス。
- 前記第1の部分および前記第2の部分は、異なる化学物質のものである、請求項1に記載の電気エネルギー貯蔵デバイス。
- 前記第1の部分および前記第2の部分は、1つまたは複数の化学種の点で異なり、前記相壁は、それらの種のより低い濃度の前記第2の部分から、より高い濃度の前記第1の部分を区切る、請求項6に記載の電気エネルギー貯蔵デバイス。
- 化学種が、前記第1の部分および前記第2の部分のうちの一方または両方から追加または除去され、化学反応が前記相壁内で生じ、前記相壁は自由に移動できる、請求項7に記載の電気エネルギー貯蔵デバイス。
- 前記化学種は、プロトンまたは酸素イオンである、請求項7に記載の電気エネルギー貯蔵デバイス。
- 端子電圧は、前記第1の部分と前記第2の部分との間の電気化学ポテンシャルの差を反映する、請求項1に記載の電気エネルギー貯蔵デバイス。
- 電源から充電され、次いで、後から負荷に放電され得る、請求項1に記載の電気エネルギー貯蔵デバイス。
- 前記作業物質は、磁性を有し、前記第1の部分および前記第2の部分のうちの1つは、高スピン状態にあり、残りの部分は、低スピン状態にある、請求項1に記載の電気エネルギー貯蔵デバイス。
- 前記第1の部分または前記第2の部分のうちの一方は、第1の磁気構造を有し、残りの部分は、異なる磁気構造を有する、請求項1に記載の電気エネルギー貯蔵デバイス。
- 前記第1の部分または前記第2の部分のうちの一方は、電子相転移の点で残りの部分と異なる、請求項1に記載の電気エネルギー貯蔵デバイス。
- 前記電子相転移は、Mott転移である、請求項14に記載の電気エネルギー貯蔵デバイス。
- 前記電子相転移は、サイト間電荷移動である、請求項14に記載の電気エネルギー貯蔵デバイス。
- 前記サイト間電荷移動は、電気的有極性無極性転移によって駆動される、請求項16に記載の電気エネルギー貯蔵デバイス。
- 前記作業物質は、秩序型または無秩序型の二重、三重、またはそれより高い次数のペロブスカイトを含む、請求項1に記載の電気エネルギー貯蔵デバイス。
- 前記作業物質は、強誘電体層、内部電場によってバイアスをかけられた強誘電体層、および電荷ドーピング層からなる三重またはそれより高い次数のペロブスカイトである、請求項18に記載の電気エネルギー貯蔵デバイス。
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