JP7263708B2 - ポリカルボシラン含有組成物 - Google Patents

ポリカルボシラン含有組成物 Download PDF

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Publication number
JP7263708B2
JP7263708B2 JP2018134574A JP2018134574A JP7263708B2 JP 7263708 B2 JP7263708 B2 JP 7263708B2 JP 2018134574 A JP2018134574 A JP 2018134574A JP 2018134574 A JP2018134574 A JP 2018134574A JP 7263708 B2 JP7263708 B2 JP 7263708B2
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methyl
group
acetate
ethyl
ether
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JP2020012951A (ja
Inventor
謙 石橋
修平 志垣
誠 中島
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Nissan Chemical Corp
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Nissan Chemical Corp
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Priority to JP2023003464A priority patent/JP7494954B2/ja
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  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2018134574A 2018-07-17 2018-07-17 ポリカルボシラン含有組成物 Active JP7263708B2 (ja)

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JP2018134574A JP7263708B2 (ja) 2018-07-17 2018-07-17 ポリカルボシラン含有組成物
JP2023003464A JP7494954B2 (ja) 2018-07-17 2023-01-13 ポリカルボシラン含有組成物

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JP2018134574A JP7263708B2 (ja) 2018-07-17 2018-07-17 ポリカルボシラン含有組成物

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JP2023003464A Division JP7494954B2 (ja) 2018-07-17 2023-01-13 ポリカルボシラン含有組成物

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JP2020012951A JP2020012951A (ja) 2020-01-23
JP7263708B2 true JP7263708B2 (ja) 2023-04-25

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JP2023003464A Active JP7494954B2 (ja) 2018-07-17 2023-01-13 ポリカルボシラン含有組成物

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102460271B1 (ko) * 2015-04-03 2022-10-28 닛산 가가쿠 가부시키가이샤 광가교기를 가지는 단차 기판 피복 조성물
WO2025009380A1 (ja) * 2023-07-06 2025-01-09 Jsr株式会社 半導体基板の製造方法及び反転パターン形成材

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003316019A (ja) 2002-04-24 2003-11-06 Toshiba Corp パターン形成方法および半導体装置の製造方法
JP2011248242A (ja) 2010-05-28 2011-12-08 Jsr Corp 絶縁パターン形成方法及びダマシンプロセス用絶縁パターン形成材料
US20120321854A1 (en) 2009-12-01 2012-12-20 University Of Massachusetts System For Producing Patterned Silicon Carbide Structures
WO2018066515A1 (ja) 2016-10-04 2018-04-12 日産化学工業株式会社 パターン反転のための被覆組成物

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003316019A (ja) 2002-04-24 2003-11-06 Toshiba Corp パターン形成方法および半導体装置の製造方法
US20120321854A1 (en) 2009-12-01 2012-12-20 University Of Massachusetts System For Producing Patterned Silicon Carbide Structures
JP2011248242A (ja) 2010-05-28 2011-12-08 Jsr Corp 絶縁パターン形成方法及びダマシンプロセス用絶縁パターン形成材料
WO2018066515A1 (ja) 2016-10-04 2018-04-12 日産化学工業株式会社 パターン反転のための被覆組成物

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JP2023040240A (ja) 2023-03-22
JP7494954B2 (ja) 2024-06-04
JP2020012951A (ja) 2020-01-23

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