JP7260309B2 - semiconductor light emitting device - Google Patents

Description

[0001] 1. Field of the Invention [0002] The present invention relates to a semiconductor light-emitting device having a light source and a fluorescent plate, and more particularly to a structure for supporting the fluorescent plate.

A semiconductor light-emitting device includes a light-emitting element such as a laser diode (LD) or a light-emitting diode (LED) that serves as a light source; Some have a substrate that accommodates a light-emitting element and a fluorescent plate.

Part of the light emitted from the light emitting element is wavelength-converted by the phosphor while passing through the inside of the fluorescent plate. The light whose wavelength has been converted by the phosphor is mixed with the light whose wavelength has not been converted inside the fluorescent plate, and is emitted from the semiconductor light emitting device.

For example, when the light emitting element emits blue light, if a phosphor that emits yellow fluorescence when excited by blue light is used, the semiconductor light emitting device emits white light in which blue light and yellow light are mixed. Further, for example, when the light-emitting element emits violet light, by using a plurality of phosphors that emit red, blue, and green, respectively, when excited by violet light, the semiconductor light-emitting device emits red light, blue light, green light, and violet light. It emits white light mixed with light.

Such a semiconductor light emitting device is designed and manufactured by measuring the color of the light emitted from the light emitting element and the color of the light wavelength-converted by the fluorescent plate in advance so as to emit light of a predetermined color from the combination thereof. be done. However, if even a part of the light emitted from the light emitting element is directly emitted outside the semiconductor light emitting device without passing through the inside of the fluorescent plate, the intended predetermined color cannot be obtained. Therefore, a structure has been proposed in which the light emitting element and the fluorescent plate are precisely arranged on the substrate so that all the light emitted from the light emitting element passes through the interior of the fluorescent plate.

For example, a semiconductor light-emitting device disclosed in Patent Document 1 includes a substrate having a recess on the top surface, a light-emitting element arranged on the bottom surface of the recess, and a plate-like fluorescent plate covering the recess. A pillar member is erected from the base material to prevent the positional deviation of the base material. In this semiconductor light-emitting device, the pillar members are arranged at positions in contact with four corners or four sides of the rectangular fluorescent plate.

Further, the semiconductor light emitting device disclosed in Patent Document 2 includes a substrate having a mortar-shaped concave portion on the top surface, a light emitting element arranged on the bottom surface of the concave portion, and a fluorescent plate arranged on the upper portion of the concave portion. ing. In this semiconductor light-emitting device, a stepped portion is provided on the inner wall surface of the base material forming the recess, and the fluorescent plate is arranged on the stepped portion.

JP 2010-258093 A JP 2009-200534 A

However, it is extremely difficult to manufacture the fluorescent plate and the concave portion of the base material without causing a slight tolerance in size between the two. For this reason, conventional semiconductor light-emitting devices have a structure in which a fluorescent plate is positioned on a base material like the semiconductor light-emitting devices disclosed in Patent Documents 1 and 2, and the light emitted from the light-emitting element is all emitted from the fluorescent plate. Even if the structure is such that light is emitted to the outside of the semiconductor light emitting device via the inside, a slight positional displacement of the fluorescent plate is unavoidable. According to experiments by the inventors, the fluorescent plate emits light by wavelength-converting the light propagating inside the fluorescent plate (emitted from the light emitting element) even in a region where the light emitted from the light emitting element does not directly hit, and Since the color of the light wavelength-converted by the fluorescent plate also changes depending on the propagation distance, if the position of the fluorescent plate shifts slightly and the area of the region on the fluorescent plate that does not directly hit the light emitted from the light emitting element changes, It has been found that the color of the light emitted from the semiconductor light emitting device is different from the predetermined color intended at the time of manufacture.

An object of the present invention is to provide a semiconductor light-emitting device capable of reliably emitting light of a predetermined color.

To achieve the above object, the semiconductor light emitting device of the present invention includes a substrate having a recess, a light emitting element fixed to the bottom surface of the recess, and a rectangular fluorescent plate fixed to the top of the recess. The inner wall surface of the base material forming the recess has a supporting surface for supporting the bottom surface of the fluorescent plate and a stepped portion formed of side surfaces along each side of the fluorescent plate. The stepped portion has, at a corner formed by two adjacent side surfaces thereof, a receiving recess for receiving a corner portion of the fluorescent plate, and the width of the bearing surface connecting to the two adjacent side surfaces is , narrower than the width of the opposing bearing surface. The fluorescent plate is arranged on the stepped portion so that the distance between the outer wall and two adjacent side surfaces is the shortest.

In the semiconductor light emitting device of the present invention, since the concave portion for receiving the corner portion of the fluorescent plate is provided on the side surface of the concave portion in which the fluorescent plate is arranged, the distance between the outer wall of the fluorescent plate and two adjacent side surfaces is the shortest. It is securely fixed at a predetermined position on the base material so as to be. As a result, the fluorescent plates can be arranged without positional deviation, and light of a predetermined color can be reliably emitted.

(A) Top view, (B) AA cross-sectional view, (C) BB cross-sectional view, (D) back view, and (E) enlarged cross-sectional view of the K part of the semiconductor light emitting device 1A of Embodiment 1. FIG. (A) Cross-sectional view of a semiconductor light-emitting device 1B of Modification 1, (B) Cross-sectional view of a semiconductor light-emitting device 1C of Modification 2. FIG. (A) Enlarged cross-sectional view of K part, (B) Enlarged cross-sectional view of K part. (A) to (I) are diagrams showing a method of manufacturing the semiconductor light emitting devices 1A to 1C. (A) to (F) are diagrams showing a method of manufacturing the semiconductor light emitting devices 1A to 1C. (A) A top view, (B), and (C) a BB cross-sectional view of a semiconductor light-emitting device 1D of Embodiment 2. FIG. (A) A top view, (B), and (C) a BB cross-sectional view of a semiconductor light-emitting device 1E of Embodiment 3. FIG. FIG. 4 is a top view showing a part of the manufacturing method of the semiconductor light emitting device 1E; (A) A top view, (B), and (C) a BB cross-sectional view of the semiconductor light emitting device 1F of Embodiment 4. FIG. (A) to (C) are top views for explaining the configuration of a semiconductor light emitting device 1G of Embodiment 5. FIG. (A) to (B) are top views for explaining the configuration of a semiconductor light emitting device 1H according to Embodiment 6. FIG. (A) top view, (B) cross-sectional view, (C) chromaticity distribution diagram of the semiconductor light-emitting device of Example 1, (D) top view of the semiconductor light-emitting device of Comparative Example 1, (E) cross-sectional view, (F) ) Chromaticity distribution diagram.

Hereinafter, the semiconductor light emitting device of this embodiment will be described with reference to each drawing. In the description of the vertical direction of the semiconductor light emitting device, the upstream side of the light path is the bottom side, and the downstream side is the top side.

(Embodiment 1)
A basic structure of the semiconductor light emitting device 1A of Embodiment 1 will be described with reference to FIG. As shown in FIGS. 1A and 1B, the semiconductor light emitting device 1A includes a substrate 14 having a recess, a light emitting element 2 fixed to the bottom surface of the recess, and a corner fixed to the top of the recess. and a fluorescent plate 3 of the type. The base material 14 is composed of a substrate 14A on which the light emitting device 2 is fixed and a frame 14B arranged on the substrate 14A so as to surround the light emitting element 2. It is a space surrounded by the inner wall surface of 14B. Furthermore, in the semiconductor light emitting device 1A of the present embodiment, the sealing member 4 that covers the light emitting element 2 is provided in the concave portion of the base material 14, and the sealing member 4 is filled so as to be in contact with the lower surface of the fluorescent plate 3. It is The sealing member 4 fixes the fluorescent plate 3 in the concave portion of the base material 14 by closely contacting the lower surface of the fluorescent plate 3 .

The inner wall surface of the frame 14B forming the recess has a stepped portion 15 for supporting the fluorescent plate 3. As shown in FIG. The stepped portion 15 includes a support surface 15a that supports the bottom surface of the fluorescent plate 3, and side surfaces 15b along each side of the fluorescent plate 3 and connected to the support surface 15a.

As shown in FIG. 1A, the stepped portion 15 has a receiving recess 16 for receiving one corner of the fluorescent plate 3 at a corner formed by two adjacent side surfaces 15b1 and 15b2 of the side surface 15b. ing.

The fluorescent plate 3 is flat and has a square shape when viewed from above (as seen from the light emitting side). Although the fluorescent plate 3 in the first embodiment has a rectangular shape when viewed from the top, it may have a square shape when viewed from the top. Furthermore, although the fluorescent plate 3 in Embodiment 1 is formed in a flat plate shape with a constant thickness, it is also possible to form a desired thickness distribution, for example, by increasing the thickness of the region corresponding to the position directly above the light emitting element 2. can.

The fluorescent plate 3 is arranged at a position (hereinafter referred to as a predetermined position) where the distance between the outer wall and the side surfaces 15b1 and 15b2 closest to the receiving recess 16 is the shortest. That is, the fluorescent plate 3 is arranged on the support surface 15a so as to be in close contact with the side surfaces 15b1 and 15b2. The outer wall of the fluorescent plate 3 is in contact with the side surfaces 15b1 and 15b2 via the appropriate sealing material 4b and adhesive 16b. At this time, the receiving recesses 16 receive the corners of the fluorescent plate 3 and enable the fluorescent plate 3 and the side surfaces 15b1 and 15b2 to come into close contact with each other. Note that the outer wall of the fluorescent plate 3 and the side surfaces 15b1 and 15b2 do not necessarily have to be interposed between the sealing material 4b and the adhesive 16b.

The side surface 15b includes side surfaces 15b1 and 15b2 sandwiching the receiving recess 16, a side surface 15b3 facing the side surface 15b1, and a side surface 15b4 facing the side surface 15b2.

The bearing surface 15a includes a bearing surface 15a1 connected to the side surface 15b1, a bearing surface 15a2 connected to the side surface 15b2, a bearing surface 15a3 connected to the side surface 15b3, and a bearing surface 15b4 connected to the side surface 15b4.

Almost the entire surfaces of the support surfaces 15a1 and 15a2 face the bottom surface of the fluorescent plate 3 and support the fluorescent plate 3 .

The bearing surface 15a3 is formed with a width larger than that of the bearing surface 15a1, and has a region where the bottom surface of the fluorescent plate 3 does not face. The support surface 15a3 faces the bottom surface of the fluorescent plate 3 by the same width as the support surface 15a1 located at the opposing position, and supports the fluorescent plate 3. As shown in FIG.

The bearing surface 15a4 is formed with a width larger than that of the bearing surface 15a2, and has a region where the bottom surface of the fluorescent plate 3 does not face. The support surface 15a4 faces the bottom surface of the fluorescent plate 3 by the same width as the support surface 15a2 located at the opposing position, and supports the fluorescent plate 3. As shown in FIG.

The width of the support surface 15a that actually supports the fluorescent plate 3, that is, the width of the region of the support surface 15a that faces the bottom surface of the fluorescent plate 3 and supports the fluorescent plate 3, is determined when the fluorescent plate 3 is in close contact with the side surfaces 15b1 and 15b2 as described above. , are designed to have the same width at opposing positions. As a result, in the semiconductor light emitting device 1A, the paths of the light traveling inside the fluorescent plate 3 become equal at the portions supported by the supporting surfaces 15a located opposite to each other, and light of a predetermined color is emitted without chromaticity deviation. can be emitted. The relationship between the fluorescent plate 3 and the stepped portion 15 of the substrate 14 will be detailed later.

The configuration of the semiconductor light emitting device 1A is the same as that of a known semiconductor light emitting device except for the structure of the fluorescent plate 3 and the concave portion of the substrate 14 described above. Other configurations of the semiconductor light emitting device 1A will be briefly described below. As shown in FIGS. 1B and 1D, the semiconductor light emitting device 1A has an external electrode 7 arranged on the lower surface of the substrate 14A and an electric power to the light emitting element 2 arranged on the upper surface of the substrate 14A. Mounted wiring 5 to be supplied, bonding member 6 for bonding and electrically connecting mounted wiring 5 and light emitting element 2, electrode 5b on substrate 14A, mounted wiring 5 and external electrode 7, electrode 5b and It has a hole (conducting via) 8 in the substrate 14 filled with a material for electrically connecting to the external electrode 7 and a connecting wire 9 for electrically connecting the electrode 5 b and the light emitting element 2 .

The light emitting element 2 is a light emitting diode that emits light of a predetermined wavelength.

The fluorescent plate 3 is made of a material in which phosphor particles that emit fluorescence of a predetermined wavelength when excited by the light from the light emitting element 2 are kneaded and dispersed in resin, glass, ceramic, or the like. Further, the fluorescent screen 3 can be made of a sintered body of a high-purity fluorescent material, or can be constructed in an appropriate form containing the fluorescent material. For the fluorescent material of the fluorescent plate 3, for example, a fluorescent material (such as a YAG fluorescent material) that emits yellow fluorescence when excited by the light emitted from the light emitting element 2 that emits blue light is used. When the light-emitting element 2 emits light (eg, blue light), the emitted light enters the fluorescent plate 3 . A part of the light incident on the fluorescent plate 3 is absorbed by the fluorescent material contained in the fluorescent plate 3 and wavelength-converted into fluorescent light (eg, yellow light). The light (blue light) not absorbed by the phosphor and the wavelength-converted fluorescence (yellow light) are mixed, and this mixed light (white light) is emitted from the upper surface of the fluorescent plate 3 .

As shown in FIG. 1A, the sealing member 4 is also filled in the receiving recess 16 to bond the corners of the fluorescent plate 3 and the receiving recess 16 . The material of the sealing member 4 filled in the receiving recess 16 may be different from the material of the sealing member 4 filled in the recess of the base material 14 . The sealing member 4 may be filled up to the same height as the upper end of the fluorescent plate 3 to the extent that it does not overflow from the upper end of the base material 14. 3 to bond the side surfaces 15b1 and 15b2 and the fluorescent plate 3 together.

The external electrode 7 is connected to an external power source (not shown) and supplies power to the light emitting element 2 from the external power source.

Next, the structure and function of the step portion 15 for reliably arranging the fluorescent plate 3 at a predetermined position on the base material 14 will be described in detail.

Corners connecting adjacent side surfaces 15b of the substrate 14 are chamfered into a rounded shape (hereinafter referred to as R shape) for convenience of molding. Since the corners of the fluorescent plate 3 are right-angled, even if an attempt is made to insert the corners of the fluorescent plate 3 into the R-shaped chamfered corners and approach the side surface 15b, the corners of the fluorescent plate 3 do not conform to the R-shaped corners. As a result, the outer wall surface of the fluorescent plate 3 is separated from the side surface 15b. When the outer wall surface of the fluorescent plate 3 is separated from the side surface 15b, it is difficult to fix the fluorescent plate 3 at a predetermined position. In the semiconductor light emitting device 1A of the present embodiment, one of the corners of the R shape is provided with a receiving recess 16, and the receiving recess 16 receives the corner of the fluorescent plate 3 so that the outer wall and the side surface of the fluorescent plate 3 are separated. 15b1 and 15b2 can be brought closer to each other so that the distance between them is the shortest.

The size of the concave portion of the base material 14 is such that the opening size of the concave portion on the upper surface of the base material 14 is larger than the size of the fluorescent plate 3 so that the fluorescent plate 3 can be placed on the supporting surface 15a without warping. It has a structure in which the opening size of the recess at the same height as 15a) is smaller than the size of the fluorescent plate 3. Specifically, in the direction along the side surface 15b1, as shown in FIG. 1B, the opening width W1 of the recess on the upper surface of the base material 14 is larger than the width L1 of the fluorescent plate 3 and is at the same height as the bearing surface 15a. is smaller than the width L1 of the fluorescent plate 3 (W1>L1>W2). In the direction along the side surface 15b2, as shown in FIG. 1C, the opening width W3 of the recess on the upper surface of the base material 14 is larger than the width L2 of the fluorescent plate 3, and the opening of the recess at the same height as the bearing surface 15a. The width W4 is smaller than the width L2 of the fluorescent plate 3 (W3>L2>W4).

In the recess of the substrate 14, when viewed from above, the opening of the recess on the upper surface of the substrate 14 has a substantially rectangular shape of width W1×width W3, and the opening of the recess at the height of the support surface 15a has a substantially rectangular shape of width W2×width W4. Shape.

Further, as described above, the size of the support surface 15a of the stepped portion 15 is such that the width of the support surface 15a that supports the fluorescent plate 3 (the width of the support surface 15a that supports the fluorescent plate 3 at the bottom surface of the fluorescent plate 3 in the state that the fluorescent plate 3 is substantially in close contact with the side surfaces 15b1 and 15b2). 1(B) and width D4=D5 in FIG. 1(C). Therefore, the sum of the opening width of the recess at the same height as the support surface 15a and twice the width of the support surface 15a1 connected to the side surface 15b1 or the support surface 15a2 connected to the side surface 15b2 substantially matches the width of the fluorescent screen 3. Specifically, in the direction along the side surface 15b1, as shown in FIG. 1B, W2+D3×2=L1 holds. In the direction along the side surface 15b2, as shown in FIG. 1(C), W4+D4×2=L2 holds.

On the upper surface of the base material 14, the size of the opening of the concave portion is larger than the size of the fluorescent plate 3 as described above. A space (gap) 19 is formed between 15b4 and the outer wall of the fluorescent plate 3 . This space 19 functions as a space that absorbs design tolerances. As described above, the widths of the bearing surfaces 15a1 and 15a2 are equal to the widths of the supporting surfaces 15a3 and 15a4 that support the phosphor screen 3, so that the gap 19 is formed by the width of the bearing surfaces 15a3 and 15a4. It is vacant because it is larger than the width of the bearing surfaces 15a1 and 15a2.

Next, the structure of the support surface 15a that contacts the bottom surface of the fluorescent plate 3 will be described. As shown in FIG. 1C, the height H1 of the side surface 15b from the bearing surface 15a is the same as the thickness of the fluorescent plate 3 or higher. Therefore, the fluorescent plate 3 does not come off from the stepped portion 15 even if a force is applied from the outside, and can maintain a fixed state at a predetermined position.

Further, as shown in FIG. 1(E), the stepped portion 15 has a projection 21 on the support surface 15a for supporting the fluorescent plate 3 from below. A corner portion connecting the side surface 15b of the stepped portion 15 and the bearing surface 15a is also formed with an R-shaped chamfered portion 21a for convenience of molding, similarly to the corner portion connecting the adjacent side surfaces 15b. In this case, since the corners of the bottom portion of the fluorescent plate 3 (hereinafter referred to as bottom corners) are right-angled, even if the bottom corners of the fluorescent plate 3 are inserted into the R-shaped chamfered portion 21a to approach the side surface 15b, the fluorescent plate 3 touches the chamfered portion 21a, and the side surface 15b of the stepped portion 15 and the side surface of the fluorescent plate 3 are separated from each other. In this embodiment, as a configuration for avoiding contact of the bottom corner portion of the fluorescent plate 3 with the chamfered portion 21a of the stepped portion 15, the protrusion 21 is provided on the support surface 15a so that the protrusion 21 is above the chamfered portion 21a. The fluorescent plate 3 can be supported, and the side surface 15b and the fluorescent plate 3 can be stuck or adhered without a gap. In addition, it is preferable that the protrusion 21 protrudes upward from the R shape of the chamfered portion 21a.

Further, the sealing member 4 is applied on the support surface 15a with a thickness equal to or greater than the height of the projection 21. As shown in FIG. Specifically, the thickness of the portion of the sealing member 4 applied to the bearing surface 15a is constant (the same height as the protrusion 21) at the portion where the fluorescent plate 3 is placed thereon. The thickness of the portion (gap 19) where the fluorescent plate 3 is not placed thereon is the same as or thicker than the portion where the fluorescent plate 3 is placed thereon.

The sealing member 4 applied between the supporting surface 15a and the fluorescent plate 3 adheres the fluorescent plate 3 and the supporting surface 15a to prevent the fluorescent plate 3 from peeling off. In particular, when the fluorescent plate 3 is made of resin, the difference in coefficient of linear expansion from that of the base material 14 is large, and the sealing member 4 is coated on the support surface 15a because the fluorescent plate 3 is likely to come off due to heat during manufacturing or assembly of the semiconductor light emitting device. This is effective in preventing the fluorescent plate 3 from peeling off.

As described above, in the semiconductor light emitting device 1A of the present embodiment, one corner of the fluorescent plate 3 enters the receiving recess 16, and the distance between the outer wall of the fluorescent plate 3 and the two side surfaces 15b1 and 15b2 adjacent to the receiving recess 16 is are arranged so that the If the direction of travel of the light emitted from the light emitting device 2 and traveling inside the fluorescent plate 3 is greatly different between the portions of the fluorescent plate 3 supported by the supporting surfaces 15a that are opposed to each other, the chromaticity of the emitted light will change. Misalignment can occur. However, since the semiconductor light-emitting device 1A has the configuration described above, and the width of the supporting surface 15a for supporting the fluorescent plate 3 is the same at the opposing positions, the light inside the fluorescent plate 3 travels at the opposing positions. It becomes substantially equal at the portion supported by a certain bearing surface 15a. As a result, the semiconductor light emitting device 1A can reliably emit light of a predetermined color without chromaticity deviation.

Further, in the semiconductor light-emitting device 1A of the present embodiment, since the receiving recesses 16 are provided, the corners of the fluorescent plate 3 do not have to be chamfered into the same R shape as the corners of the substrate 14. The distance between the outer wall and the side surfaces 15b1 and 15b2 can be minimized, and the steps for manufacturing the fluorescent screen 3 can be reduced.

Further, in the semiconductor light emitting device 1A, the entire concave portion of the base material 14 is filled with the sealing member 4, and the light emitted from the light emitting element 2 reaches the fluorescent screen 3 without passing through the air layer. It can be extracted with high efficiency.

In the first embodiment, since the sealing member 4 is brought into close contact with the lower surface of the fluorescent plate 3 to fix the fluorescent plate 3, an adhesive for fixing the fluorescent plate 3 is prepared separately from the sealing member 4 and supported. The phosphor plate 3 is sufficiently fixed by the sealing member 4 without the need to apply it to the surface 15a or the side surface 15b.

Furthermore, in the semiconductor light-emitting device 1A, since the fluorescent plate 3 is surrounded by the side surface 15b having the same height as the fluorescent plate 3, the peeling of the film of the fluorescent plate 3 can be prevented even if stress is applied to the fluorescent plate 3 from the outside. can be done.

It should be noted that in adjacent bearing surfaces 15a (between the bearing surfaces 15a1 and 15a2, and between the bearing surfaces 15a3 and 15a4), even if the width of the bearing surface 15a that supports the fluorescent plate 3 is the same or different, Light can be emitted from the semiconductor light emitting device 1A without chromaticity deviation.

(Modification)
Modified semiconductor light emitting devices 1B and 1C will be described with reference to FIG. Semiconductor light emitting devices 1B and 1C differ from semiconductor light emitting device 1A in the shape of sealing member 4 . As shown in FIG. 2A, the sealing member 4 of the semiconductor light emitting device 1B of Modification 1 is formed in a uniform thin film so as to cover the light emitting element 2, the bonding member 6, the layout wiring 5 and the electrode 5b. and is provided on the entire inner wall of the recess of the base material 14 .

In addition, as shown in FIG. 2B, the sealing member 4 of the semiconductor light emitting device 1C of Modification 2 is part of the frame body 14B so as to cover the light emitting element 2, the bonding member 6, the layout wiring 5 and the electrode 5b. provided, for example, in a dome shape.

In the semiconductor light emitting devices 1B and 1C, the sealing member 4 has the above-described shape, so that the sealing member 4 is filled in the entire concave portion of the base material 14 compared to the semiconductor light emitting device 1A. The amount of material used for the member 4 can be reduced.

When the sealing member 4 has a hemispherical shape centered on the light emitting element 2 as in the semiconductor light emitting device 1C of the modified example 2, the light emitted from the light emitting element 2 in each direction is emitted at the interface between the sealing member 4 and the air. , exits with almost no refraction. Therefore, the semiconductor light emitting device 1C has a higher light extraction efficiency than the semiconductor light emitting device 1B in which the sealing member 4 is a thin film.

The sealing member 4 can be omitted when the space inside the concave portion of the base material 14 is hermetically sealed.

In the semiconductor light emitting devices 1B and 1C, since the sealing member 4 is not filled up to the position where it contacts the lower surface of the fluorescent plate 3, an adhesive is applied to the bearing surface 15a and the side surface 15b of the stepped portion 15, or the edge of the fluorescent plate 3 is coated with an adhesive. It is preferable to fix the fluorescent plate 3 to the base material 14 by applying an adhesive to the part or the lower surface of the fluorescent plate 3 . Note that the material of the adhesive may be the same as the material of the sealing member 4 .

In the semiconductor light emitting device 1A of Embodiment 1, as shown in FIG. 1E, the projections 21 provided on the support surface 15a avoid contact between the corners of the fluorescent plate 3 and the chamfered portions 21a of the stepped portions 15. However, the structure for avoiding contact between the fluorescent plate 3 and the chamfered portion 21a is not limited to the protrusion 21. FIG. For example, in order to avoid contact between the fluorescent plate 3 and the chamfered portion 21a, as shown in FIG. good. In order to avoid contact between the fluorescent plate 3 and the chamfered portion 21a, the fluorescent plate 3 may be processed, and as shown in FIG. may be The configuration for avoiding contact between the fluorescent plate 3 and the chamfered portion 21a can also be applied to the modified semiconductor light emitting devices 1B and 1C shown in FIG.

<<Method for Manufacturing Semiconductor Light Emitting Device of Embodiment 1>>
Next, a method for manufacturing the semiconductor light emitting devices 1A to 1C will be described with reference to FIGS. 4(A) to (I) and FIGS. 5(A) to (F). In the method of manufacturing the semiconductor light emitting devices 1A to 1C, since steps 1 and 2 shown in FIG. 4 are the same as step 6 shown in FIG. 5, they will be collectively described. On the other hand, since steps 3 to 5 shown in FIG. 5 are different for the semiconductor light emitting devices 1A to 1C, they will be explained separately. 4(E) is a top view of FIG. 4(D), FIG. 4(G) is a cross-sectional view of FIG. 4(F), and FIG. 4(I) is a cross-sectional view of FIG. 5(B) is a cross-sectional view of FIG. 5(A), and FIG. 5(E) is a cross-sectional view of FIG. 5(D).

(Step 1: Substrate preparation step)
First, as shown in FIG. 4A, an insulating substrate 14a (eg, a ceramic substrate) with metal (eg, Cu, Ni, Au) films formed on both upper and lower surfaces thereof is prepared. Next, after forming a resist mask on the metal film, part of the metal film disposed on the upper and lower surfaces of the substrate 14a is removed by etching using an aqueous solution of ferric chloride, as shown in FIG. Mounted wirings 5, electrodes 5b, and external electrodes 7 are formed as shown. Next, as shown in FIG. 4(C), a hole 8a is formed by laser from the mounting wiring 5 and the electrode 5b formed on the upper surface of the substrate 14a to the external electrode 7 on the lower surface of the substrate 14a. do. Next, electroless plating (Cu plating) is applied to the holes 8a, and after filling the holes 8a, electrolytic plating is applied to form the upper and lower mounting wirings 5 and the electrodes 5b, as shown in FIG. A conductive via 8 electrically connecting with the external electrode 7 is formed. Thus, a substrate 14A is formed as shown in FIG. 4(E).

After the substrate 14 is formed, as shown in FIGS. 4(F) and 4(G), a frame 14B is formed on the upper surface of the substrate 14A at a position surrounding the mounting wirings 5 and the electrodes 5b. The frame 14B can be formed using a thermosetting resin, for example. Specifically, first, the mold for forming the frame is heated to a temperature (around 150° C.) at which the material of the frame 14B (hereinafter referred to as the precursor) is cured. Next, the substrate 14A is set in a mold for forming a frame, a precursor is injected into the mold, and the precursor is cured by heating. As a result, the base material 14 having the concave portion on the upper surface is formed, with the frame 14B arranged on the upper surface of the substrate 14A. As the precursor, it is preferable to use a white resin such as a silicone resin containing titanium oxide.

As the precursor, epoxy resin containing light scattering particles, nylon, and thermoplastic resin such as PCT (polycyclohexanedimethylene terephthalate) can also be used.

(Step 2: Mounting step of light emitting element 2)
After the substrate 14 is formed, as shown in FIGS. 4(H) and 4(I), a bonding member (AuSn solder or the like) 6 is applied to the upper surface of the mounting wiring 5, and the light emitting element 2 is mounted thereon. . Next, the substrate 14 is heated in a reflow furnace to melt and heat the bonding member 6 to harden it. As a result, the light emitting element 2 is bonded onto the mounting wiring 5 . After that, the electrode 5b and the light emitting element 2 are electrically joined with a wire 9 (for example, an Au wire). By this step 2, the light emitting element 2 is mounted on the bottom surface of the concave portion of the base material 14 . The light emitting element 2 may be arranged at the center of the bottom surface of the concave portion of the substrate 14, or may be arranged at a position other than the center of the bottom surface.

Since the structure of the sealing member 4 is different in the semiconductor light emitting devices 1A to 1C in Steps 3 to 5, different drawings will be used in the following description. FIGS. 5A-1 to 5E-1 show manufacturing steps 3 to 5 of the semiconductor light emitting device 1A of Embodiment 1, and FIGS. 5A-3 to 5E-3 show manufacturing steps 3 to 5 of the semiconductor light emitting device 1B of Modification 1, and manufacturing steps 3 to 5 of the semiconductor light emitting device 1C of Modification 2. showing.

(Step 3: Filling step of sealing material)
After mounting the light emitting element 2 in step 2, as shown in FIGS. The recesses of the base material 14 are filled. The filled sealing material 4b is not yet cured, and the process proceeds to the next step 4. As the sealing material 4b, translucent resin (for example, silicone resin) or glass is used.

When manufacturing the semiconductor light emitting device 1A, as shown in FIGS. 5(A-1) and 5(B-1), the concave portion of the base material 14 is filled with the sealing material 4b so as to fill above the stepped portion 15. do.

When manufacturing the semiconductor light emitting device 1B, as shown in FIGS. 5A-2 and 5B-2, the sealing material 4b is sprayed so as to cover the light emitting element 2, the mounted wiring 5 and the electrode 5b. Apply thinly with

When manufacturing the semiconductor light emitting device 1C, as shown in FIGS. A sealing material 4b is applied to the dome shape covering the electrode 5b and the wire 9).

(Step 4: Adhesive application step)
Next, as shown in FIG. 5C, the receiving recess 16 is filled with a resin having adhesiveness different from that of the sealing material 4b or the sealing member 4b (hereinafter collectively referred to as adhesive 16b). The adhesive 16b is also applied to the stepped portion 15 as necessary.

When the semiconductor light emitting device 1A is manufactured, the fluorescent plate 3 can be sufficiently fixed by the sealing material 4b filled in the concave portion of the base material 14. Therefore, as shown in FIG. 5C-1, the base material 14 It is not necessary to apply the adhesive 16b to the bearing surface 15a.

When the semiconductor light-emitting devices 1B and 1C are manufactured, the sealing material 4b is not filled up to the position where it contacts the lower surface of the fluorescent plate 3, so that the stepped portion as shown in FIGS. 5(C-2) and 5(C-3) Preferably, the adhesive 16b is applied to the support surface 15a of the fluorescent plate 15, or the adhesive 16b is applied to the four edges of the lower surface of the fluorescent plate 3 or the entire lower surface of the fluorescent plate 3. Note that the side surface 15b of the stepped portion 15 may be coated with the adhesive 16b during the manufacture of any of the semiconductor light emitting devices 1A to 1C.

(Step 5: Step of Placing Fluorescent Plate)
Next, the fluorescent plate 3 is prepared, and as shown in FIGS. 5(D) and 5(E), the fluorescent plate 3 is placed on the support surface 15a of the step portion 15 using a vacuum pick or the like. When the fluorescent plate 3 is arranged so as to adhere to the adhesive 16b applied to the receiving recess 16, the adhesive 16b has an affinity with the fluorescent plate 3, and the fluorescent plate 3 moves so as to be attracted to the receiving recess 16. adjacent to the two side surfaces 15b1 and 15b2. After arranging the fluorescent plate 3, the substrate 14 is heated in a curing furnace to cure the sealing material 4b and the adhesive 16b.

In particular, when the fluorescent screen 3 is pushed in toward the receiving recess 16 and arranged, the adhesive 16b filled in the receiving recess 16 and the like becomes more compatible with the fluorescent screen 3 . In addition, by placing the fluorescent plate 3 while tilting the base material 14 slightly so that the receiving recess 16 side faces downward or applying ultrasonic vibration to the base material 14, the fluorescent plate 3 is brought into contact with the side surfaces 15b1 and 15b2. You can make it easier.

Since the opening size of the concave portion on the upper surface of the base material 14 is larger than the size of the fluorescent plate 3, when the fluorescent plate 3 is arranged closest to the reception concave portion 16 side, a gap 19 is formed between the side surfaces 15b3 and 15b4 and the fluorescent plate 3. .

When preparing the fluorescent plate 3, it is preferable to separate the fluorescent plate into pieces of a predetermined size after preparing a large plate-like fluorescent plate in consideration of mass productivity. A method such as dicing or punching can be used as a method for cutting out the fluorescent plate. Dicing is a method of separating the boundary of each fluorescent plate with a dicer, and dicing can reduce the cost because the fluorescent plate can be used as little as possible. Punching, on the other hand, is a method that uses a mold to make a hole in a predetermined shape, and can easily cut the fluorescent screen into any shape (for example, a shape with rounded corners).

(Step 6: Singulation step of base material)
Next, the base material 14 is separated into individual LED packages by a dicer as shown in FIG. 5(F). Through the steps 1 to 6 described above, the semiconductor light emitting devices 1A to 1C can be manufactured.

As described above, in the method for manufacturing the semiconductor light emitting devices 1A to 1C, the fluorescent plate 3 is arranged so that the corners of the fluorescent plate 3 enter the receiving recess 16 and the distance between the outer wall of the fluorescent plate 3 and the side surfaces 15b1 and 15b is the shortest. As a result, the width of the fluorescent plate 3 supported by the support surface 15a becomes the same at the opposing positions. As a result, it is possible to manufacture a semiconductor light-emitting device in which the fluorescent plate 3 is arranged without positional deviation and light of a predetermined color is reliably emitted.

In particular, even when obtaining a semiconductor light-emitting device 1 with a narrow chromaticity range of a predetermined emission color by combining the fluorescent plate 3 individually selected in advance for chromaticity and the light-emitting element 2 individually selected for light emission characteristics, the fluorescent plate 3 can be arranged at a predetermined position without deviation from the light emitting element 2, and the semiconductor light emitting device 1 with a desired chromaticity range can be easily provided.

Further, since the opening size of the concave portion on the upper surface of the base material 14 is larger than the size of the fluorescent plate 3, the fluorescent plate 3 can be easily placed at a predetermined position on the support surface 15a without applying force to the fluorescent plate 3 to warp the fluorescent plate 3. can do. As a result, the fluorescent screen 3 can be assembled to the substrate 14 with high accuracy.

Further, the fluorescent plate 3 expands due to the heating of the base material 14, but since the gaps 19 are formed in the semiconductor light emitting devices 1A to 1C, the fluorescent plate 3 can expand toward the gaps 19 when expanding. As a result, it is possible to prevent the fluorescent plate 3 from being warped or peeled off from the substrate 14 due to thermal expansion. Especially when the fluorescent plate 3 is made of resin, the effect of providing the gap 19 is remarkable because the fluorescent plate 3 tends to expand.

Also, when heated, the sealing material 4b may expand and apply stress to the connecting wires 9. FIG. However, as shown in FIGS. 5(E-2) and 5(E-3), for example, if there is a space not filled with the sealing material 4b in the concave portion of the base material 14, the sealing material 4b can expand into that space. Therefore, especially in the semiconductor light emitting devices 1B and 1C, the stress applied to the connection wires 9 due to the expansion of the sealing material 4b is reduced, and the semiconductor light emitting devices have higher reliability.

In the above description, the sealing material 4b and the adhesive 16b are cured together in order to reduce the number of times of heating. When manufacturing the devices 1B and 1C, the step 5 of placing the fluorescent plate 3 may be performed after the sealing material 4b is heated and cured.

(Embodiment 2)
Next, the semiconductor light emitting device 1D of Embodiment 2 will be described with respect to the points different from the semiconductor light emitting device 1A of Embodiment 1. FIG. As shown in FIG. 6, the semiconductor light emitting device 1D has two adjacent side surfaces 15b1 and 15b2 of the four side surfaces forming the receiving recess 16, each having a convex portion 18 projecting toward the fluorescent screen 3 side. It is different from the semiconductor light emitting device of Embodiment 1 in this respect.

In the semiconductor light-emitting device 1D, the fluorescent plate 3 is arranged so as to abut against the two side surfaces 15b1 and 15b2, and is supported by the supporting surface 15a of the fluorescent plate 3, similarly to the semiconductor light-emitting device 1A of the first embodiment. The widths are the same at the opposing positions (width D1=D3 in FIG. 6B and width D4=D5 in FIG. 6C).

In the semiconductor light emitting device 1D, a gap 19 is provided between the outer wall of the fluorescent plate 3 and the side surfaces 15b3 and 15b4. , 15b2, there is also a gap 19A.

As described above, in the semiconductor light emitting device 1D, the gap 19A along the side surface of the fluorescent plate 3 is provided at a position facing the side of the fluorescent plate 3 on which the gap 19 is provided. advances in a state similar to that of the semiconductor light-emitting device 1A in which only the gap 19 is left, on the side surfaces of the opposing positions. As a result, in the semiconductor light emitting device 1D, it is possible to reduce the chromaticity deviation of the light emitted from the side surface of the fluorescent plate 3 facing the fluorescent plate 3. FIG.

One protrusion 18 may be provided on each of the side surfaces 15b1 and 15b2, or a plurality of protrusions 18 may be provided. Moreover, the same number of protrusions 18 may be provided on each of the side surfaces 15b1 and 15b2, or a different number of protrusions 18 may be provided. Further, recesses may be provided on the side surfaces 15b1 and 15b2 instead of the protrusions 18. FIG.

In the semiconductor light-emitting device 1D of Embodiment 2, since the gap 19A is formed between the fluorescent plate 3 and the side surfaces 15b1 and 15b2 by the convex portion 18, when the rounded shape of the corner connecting the side surfaces 15b1 and 15b2 is small, is a structure in which the corners of the fluorescent plate 3 do not come into contact with the corners connecting the side surfaces 15b1 and 15b2 even if the receiving recesses 16 are not provided in the corners. Therefore, in the semiconductor light emitting device 1D, the distance between the outer wall of the fluorescent plate 3 and the side surfaces 15b1 and 15b2 can be minimized even if the receiving recess 16 is omitted.

(Embodiment 3)
Next, a semiconductor light emitting device 1E of Embodiment 3 will be described with reference to FIG. The structure and arrangement of the fluorescent plate 3 and the substrate 14 of the semiconductor light emitting device 1E are the same as those of the semiconductor light emitting device 1A of the first embodiment. However, in the semiconductor light emitting device 1E, as shown in FIG. 7A, a gap 19 between the fluorescent plate 3 and the side surfaces 15b3 and 15b4 is filled with a resin 20 having reflectivity.

As shown in FIGS. 7B and 7C, the resin 20 is preferably buried from the bearing surface 15a to the same height as the side surface 15b. For the resin 20, it is preferable to use a resin having the same color or similar reflectance as the frame 14B, such as a silicone resin containing light scattering particles such as titanium oxide, alumina, or ZnO, or an epoxy resin.

In the semiconductor light-emitting device 1E, by embedding the resin 20 in the gap 19, the entire side surface of the fluorescent plate 3 is covered with the frame 14B or the white resin of the resin 20. Therefore, the light emitted from the side surface of the fluorescent plate 3 is reduced. The progress is similar to that of the semiconductor light-emitting device 1A in which the gap 19 is not filled with the resin 20, even on the side surfaces facing each other. Thereby, in the semiconductor light emitting device 1E, the chromaticity deviation of the light emitted from the side surface of the fluorescent plate 3 can be further reduced.

The manufacturing method of the semiconductor light-emitting device 1E of Embodiment 3 differs from the manufacturing method of the semiconductor light-emitting device 1A of Embodiment 1 only in that a white resin coating step is performed between Steps 5 and 6, and the other steps are different. are the same as in the first embodiment.

Specifically, as shown in FIG. 8, after the fluorescent plate 3 is placed at a predetermined position on the stepped portion 15 in step 5, the resin 20 is applied in the gap 19 to the same height as the side surface 15b. After applying the resin 20, the resin 20 is cured in a curing furnace. When this step is completed, step 6 (substrate singulation step) in FIG. 5(F) is performed.

(Embodiment 4)
Next, a semiconductor light emitting device 1F of Embodiment 4 will be described with reference to FIG. In the semiconductor light-emitting device 1F, the structure and arrangement of the fluorescent plate 3 and the substrate 14 are basically the same as the semiconductor light-emitting device 1A of Embodiment 1, but the semiconductor light-emitting device 1F has the structure shown in FIG. Moreover, the height of the side surface 15b of the frame 14B is different between the two side surfaces 15b1 and 15b2 adjacent to the receiving recess 16 and the side surfaces 15b3 and 15b4 located opposite thereto.

Specifically, as shown in FIGS. 9B and 9C, the structure has a structure in which the height H2 of the side surfaces 15b3 and 15b4 is lower than the height H1 of the side surfaces 15b1 and 15b2. The height H1 of the side surfaces 15b1 and 15b2 is preferably equal to or higher than the height of the fluorescent plate 3, and is, for example, 0.3 mm. A height H2 of the side surfaces 15b3 and 15b4 is, for example, about 0.1 mm to 0.2 mm.

When the fluorescent plate 3 is placed on the stepped portion 15 at the time of manufacture, the fluorescent plate 3 normally moves so as to be attracted to the side where more adhesive is applied. In the semiconductor light emitting device 1F, more adhesive can be applied to the high side surfaces 15b1 and 15b2 than to the low side surfaces 15b3 and 15b4. As a result, when the fluorescent plate 3 is placed on the stepped portion 15, the fluorescent plate 3 moves toward the high side surfaces 15b1 and 15b2. However, even if the fluorescent plate 3 is not arranged, the fluorescent plate 3 can be fixed closer to the side surfaces 15b1 and 15b2 more easily and reliably.

It should be noted that the height of the side surfaces of the frame 14B can be adjusted so that more adhesive can be applied to the side surfaces 15b1 and 15b2 on the side of the receiving recess 16 than to the side surfaces 15b3 and 15b4 located opposite to the side surfaces 15b1 and 15b2. The configuration is not limited to a configuration in which the entirety is higher than the entirety of the side surfaces 15b3 and 15b4. For example, some of the sides 15b1 and 15b2 may be higher than the rest of the side 15b, or all of the sides 15b1 and 15b2 and some of the sides 15b3 and 15b4 may be higher than the rest of the sides 15b3 and 15b4. It may be a configuration.

(Embodiment 5)
Next, a semiconductor light emitting device 1G of Embodiment 5 will be described with reference to FIG. As described above, the corners connecting the adjacent side surfaces 15b of the stepped portion 15 are usually formed with R-shaped chamfers for convenience of molding. As shown in FIG. 10A, the semiconductor light emitting device 1G of Embodiment 5 has large-diameter R-shaped chamfered portions 17A to 17C at three corners of the stepped portion 15 other than the corners where the receiving recesses 16 are provided. It is characterized by being provided at two corners.

As shown in FIG. 10B, the size of the R of the chamfered portions 17A to 17C is such that the width of the side surface of the recess (the width of the straight portion) excluding the R is shorter than the length of the side of the fluorescent plate 3. Satoru. Specifically, the length including the chamfered portions 17A and 17B of the side surface 15b3 is LOfl, the length of the side of the fluorescent plate 3 opposite the side surface 15b3 is LP, and the chamfered portions 17A and 17B of the side surface 15b3 are excluded. Letting LOst be the length of the side of the straight line portion, LOfl is longer than LP and LOst is shorter than LP (LOst<LP<LOfl). The relationship between the side surface 15b1 opposite the side surface 15b3 and the length of the side of the fluorescent plate 3 in contact with the side surface 15b1 is the same as the relationship between the lengths of the sides of the side surface 15b3 and the fluorescent plate 3. The length of the chamfered portions 17A and 17B in the direction along the side surface 15b3 is (LOfl-LOst)/2.

The same is true for the side surface perpendicular to it, the length including the chamfered portions 17B and 17C of the side surface 15b4 is WOfl, the length of the side of the fluorescent plate 3 facing the side surface 15b3 is WP, and the chamfered portion 17B of the side surface 15b4 is , 17C, WOst is longer than WP and WOst is shorter than WP (WOst<WP<WOfl). The relationship between the side surface 15b2 opposite the side surface 15b4 and the length of the side of the fluorescent plate 3 that is in contact with the side surface 15b2 is the same as the relationship between the lengths of the sides of the side surface 15b4 and the fluorescent plate 3. The length of the chamfered portions 17A and 17B in the direction along the side surface 15b3 is (WOfl-WOst)/2.

As described above, the semiconductor light emitting device 1G has a configuration in which the length of the straight portion of the side surface 15b excluding the chamfered portions 17A to 17C is shorter than the length of the side of the fluorescent plate 3, as shown in FIG. 10(C). Thus, even if the fluorescent plate 3 tries to approach the side surfaces 15b3 and 15b4, the chamfered portions 17A to 17C contact the corners of the fluorescent plate 3 and prevent the side surfaces 15b3 and 15b4 from coming into contact with the fluorescent plate 3. FIG. Therefore, in the semiconductor light emitting device 1G, the fluorescent plate 3 can be brought closer to the receiving recess 16 side and fixed more easily, so that light of a predetermined color can be emitted more reliably without chromaticity deviation.

(Embodiment 6)
Next, a semiconductor light emitting device 1H of Embodiment 6 will be described with reference to FIG. As shown in FIG. 11(A), the semiconductor light emitting device 1H has two side surfaces 15b3 and 15b4, which are located opposite to the side surfaces adjacent to the corners where the receiving recesses 16 are provided, and which protrude toward the fluorescent screen 3 side. 18B.

Since the convex portions 18B are provided on the side surfaces 15b3 and 15b4, as shown in FIG. Contact with the outer wall prevents the contact between the side surfaces 15b3 and 15b4 and the fluorescent plate 3. - 特許庁Therefore, in the semiconductor light-emitting device 1H, it becomes easier to bring the phosphor plate 3 closer to the receiving recess 16 side and fix it. As a result, the semiconductor light emitting device 1H can more reliably emit light of a predetermined color without chromaticity deviation.

One protrusion 18B may be provided on each of the side surfaces 15b3 and 15b4, or a plurality of protrusions 18B may be provided. Further, the same number of protrusions 18B may be provided on the side surfaces 15b3 and 15b4, or different numbers thereof may be provided.

In order to confirm the effect of suppressing the displacement of the fluorescent plate in the semiconductor light-emitting device of the present invention, the case where the fluorescent plate 3 is not displaced (Example 1) and the case where the fluorescent plate 3 is displaced (Comparative Example 1) were examined. The degree distribution was evaluated. 12A is a top view of the semiconductor light emitting device of Example 1, FIG. 12B is a sectional view thereof, and FIG. 12C is a chromaticity distribution of the semiconductor light emitting device of Example 1. FIG. 12(D) is a top view of the semiconductor light emitting device of Comparative Example 1, FIG. 12(E) is a sectional view thereof, and FIG. 12(F) is a chromaticity distribution of the semiconductor light emitting device of Comparative Example 1. . Unlike the semiconductor light emitting device of Embodiment 1, the semiconductor light emitting device of Example 1 does not have the stepped portion 15 and the receiving recess 16. A sample corresponding to the semiconductor light emitting device of the first embodiment is constructed by matching the outer shape with the position and size. The semiconductor light-emitting device of Comparative Example 1 is configured as a sample that does not correspond to the light-emitting device or the like of Embodiment 1 by shifting the position of the fluorescent plate 3 from the outer shape of the substrate 14 in the semiconductor light-emitting device of Example 1. .

<Preparation of semiconductor light-emitting device>
First, two semiconductor light emitting devices were prepared. The size of each of the substrates 14 was 2.2×1.7×t0.75 mm, and the frame 14B was made of silicone resin containing titanium oxide. A light-emitting diode made of InGaN and having a peak wavelength of 445 nm and a size of 0.2×0.32×t0.12 mm was used as the light-emitting element 2 . The phosphor plate 3 was made of silicone resin containing 15 wt % YAG phosphor, and had a size of 2.2×1.7×t0.18 mm. A sealing member in the concave portion of the base material 14 is omitted. As shown in FIGS. 12A and 12D, the width of the bearing surface 15a of the base material 14 is such that the bearing surfaces 15a at opposing positions have the same width. The bearing surfaces 15a2 and 15a4 are 0.3 mm.

In the semiconductor light-emitting device of Example 1, as shown in FIGS. 12A and 12B, the fluorescent plate 3 is arranged and fixed on the supporting surface 15a without deviation. In the semiconductor light emitting device of Comparative Example 1, as shown in FIGS. 12D and 12E, the fluorescent plate 3 is shifted from the bearing surface 15a3 toward the bearing surface 15a1 by 0.15 mm, and is shifted from the bearing surface 15a4 toward the bearing surface 15a2 by 0.15 mm. .25 mm and fixed.

<Evaluation method>
A current of 30 mA was applied to each of the prepared semiconductor light emitting devices, and the light emitting state of each semiconductor light emitting device was photographed with a surface luminance meter installed on the side facing the light emitting surface to confirm the chromaticity distribution.

<Evaluation results>
In the semiconductor light emitting device of Example 1, as shown in FIG. 12(C), the chromaticity distribution of the light emitted from above the fluorescent screen 3 is arranged on the supporting surfaces 15a1 and 15a3 which are positioned opposite to each other. The portion located on the bearing surface 15a2 and the portion disposed on the bearing surface 15a4 were substantially the same. The average chromaticity in the on-axis direction of the semiconductor light emitting device at that time was (Cx, Cy)=(0.223, 0.141).

On the other hand, the average chromaticity in the axial direction of the semiconductor light emitting device of Comparative Example 1 is (Cx, Cy)=(0.220, 0.135), and the chromaticity difference from the semiconductor light emitting device of Example 1 is ΔCx=0.003, It occurred at ΔCy=0.006. In the semiconductor light-emitting device of Comparative Example 1 at that time, as shown in FIG. I saw a difference. In particular, the light emitted from the region Y arranged on the bearing surfaces 15a2 and 15a3 in the direction protruding from the substrate 14 of the fluorescent plate 3 is emitted from the portions arranged on the other bearing surfaces 15a1 and 15a4. It was more yellowish and less bright than the light that was emitted.

From this result, it can be seen that the chromaticity of the light emitted from the semiconductor light-emitting device is also deviated simply by shifting the position of the fluorescent plate 3 from the predetermined position. It has been found that the chromaticity of the emitted light varies when the arrangement width is different.

As in Comparative Example 1, if the width of the support surface 15a of the fluorescent plate 3 differs at the opposing position, the chromaticity of the light deviates at the opposing position. This is probably because the width, that is, the width of the region where the light emitted from the light emitting element 2 does not directly hit, differs at the opposing positions. As shown in region Y in FIG. 12F , the more regions the light from the light emitting element 2 indirectly hits, the more yellowish the light emitted from the upper surface of the region Y becomes, resulting in lower brightness. Conceivable. Further, in the semiconductor light emitting device of Example 1, since the fluorescent plates 3 arranged on the upper surface of the supporting surface 15a at the opposing position are arranged so that the widths of the fluorescent plates 3 are equal to each other, light incident on the fluorescent plate 3 from the light emitting element 2 The size of the area indirectly hit by the light passing through the fluorescent plate 3 becomes equal at the opposite positions, and the chromaticity deviation due to the positional deviation of the fluorescent plate 3 is reduced, so that the light of the predetermined color can be emitted reliably. Conceivable.

1A to 1H... Semiconductor light emitting device, 2... Light emitting element, 3... Fluorescent plate, 4... Sealing member, 14... Base material, 15... Stepped portion, 15a... Support Face, 15b... Side, 16... Receiving recess

Claims (11)

a substrate having a recess;
a light emitting element fixed to the bottom surface of the recess;
and a rectangular fluorescent plate fixed to the upper part of the recess,
The inner wall surface of the base material constituting the recess has a stepped portion formed of a bearing surface for supporting the bottom surface of the fluorescent plate and a side surface along each side of the fluorescent plate,
The stepped portion has, at a corner formed by two adjacent side surfaces thereof, a receiving recess for receiving a corner portion of the fluorescent plate, and the width of the bearing surface connected to the two adjacent side surfaces is , respectively narrower than the width of the opposing bearing surfaces,
The fluorescent plate is arranged at the stepped portion so that the distance between the outer wall and the two adjacent side surfaces is the shortest,
A semiconductor light-emitting device according to claim 1, wherein a space between the two adjacent side surfaces facing each other and an outer wall of the fluorescent plate is filled with a reflective material. a substrate having a recess;
a light emitting element fixed to the bottom surface of the recess;
and a rectangular fluorescent plate fixed to the upper part of the recess,
The inner wall surface of the base material constituting the recess has a stepped portion formed of a bearing surface for supporting the bottom surface of the fluorescent plate and a side surface along each side of the fluorescent plate,
The stepped portion has, at a corner formed by two adjacent side surfaces thereof, a receiving recess for receiving a corner portion of the fluorescent plate, and the width of the bearing surface connected to the two adjacent side surfaces is , respectively narrower than the width of the opposing bearing surfaces,
The fluorescent plate is arranged at the stepped portion so that the distance between the outer wall and the two adjacent side surfaces is the shortest,
At least a portion of the two adjacent side surfaces, or at least a portion of the two adjacent side surfaces at positions opposed to the two adjacent side surfaces, is provided with a convex portion projecting toward the fluorescent plate. A semiconductor light-emitting device characterized by: 3. The semiconductor light-emitting device according to claim 1 , wherein the supporting surfaces have the same width at which the fluorescent plate is supported at the opposing positions. 3. The semiconductor light-emitting device according to claim 1, wherein a gap between said receiving recess and said fluorescent plate is filled with an adhesive resin. 3. The semiconductor light-emitting device according to claim 1, wherein the fluorescent plate is adhered to the supporting surface or the two adjacent side surfaces with an adhesive resin. 5. A semiconductor light-emitting device according to claim 4 , wherein said light-emitting element is surrounded by a sealing member. 7. The semiconductor light-emitting device according to claim 6 , wherein the sealing member covering the light-emitting element is filled in the recess to a position where it comes into close contact with the bottom surface of the fluorescent plate. 3. The semiconductor light-emitting device according to claim 1, wherein a projection is provided on said support surface, and said projection supports the lower surface of said fluorescent plate. 3. The semiconductor light-emitting device according to claim 1 , wherein the supporting surface is provided with a recess for avoiding contact with the lower end of the corner of the fluorescent plate. 2. The base material is characterized in that the height of a part or the whole of the two side surfaces located at opposing positions of the two adjacent side surfaces is lower than the height of the two adjacent side surfaces. 2. The semiconductor light emitting device according to . A corner formed by adjacent side surfaces of the stepped portion has an R shape, and the length of the side of the straight portion of the side surface excluding the R shape is longer than the length of the side of the fluorescent plate in contact with the side surface. 3. The semiconductor light-emitting device according to claim 1 , wherein the length is short.

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