JP7256661B2 - 撮像デバイス、撮像手段の制御方法、プログラム及び記憶媒体 - Google Patents

撮像デバイス、撮像手段の制御方法、プログラム及び記憶媒体 Download PDF

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JP7256661B2
JP7256661B2 JP2019051507A JP2019051507A JP7256661B2 JP 7256661 B2 JP7256661 B2 JP 7256661B2 JP 2019051507 A JP2019051507 A JP 2019051507A JP 2019051507 A JP2019051507 A JP 2019051507A JP 7256661 B2 JP7256661 B2 JP 7256661B2
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counting
pixels
exposure
imaging device
imaging
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Japanese (ja)
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JP2020155886A (ja
JP2020155886A5 (enExample
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裕子 佐藤
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Canon Inc
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Canon Inc
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Priority to JP2019051507A priority Critical patent/JP7256661B2/ja
Priority to US16/821,391 priority patent/US11336858B2/en
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Publication of JP2020155886A5 publication Critical patent/JP2020155886A5/ja
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
JP2019051507A 2019-03-19 2019-03-19 撮像デバイス、撮像手段の制御方法、プログラム及び記憶媒体 Active JP7256661B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2019051507A JP7256661B2 (ja) 2019-03-19 2019-03-19 撮像デバイス、撮像手段の制御方法、プログラム及び記憶媒体
US16/821,391 US11336858B2 (en) 2019-03-19 2020-03-17 Image capturing device and method that control an exposure period of a photon-counting type of an image sensor

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JP2019051507A JP7256661B2 (ja) 2019-03-19 2019-03-19 撮像デバイス、撮像手段の制御方法、プログラム及び記憶媒体

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JP2020155886A JP2020155886A (ja) 2020-09-24
JP2020155886A5 JP2020155886A5 (enExample) 2022-03-30
JP7256661B2 true JP7256661B2 (ja) 2023-04-12

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7572811B2 (ja) * 2020-08-18 2024-10-24 キヤノン株式会社 画像符号化装置及びその制御方法及びプログラム
JP2024073994A (ja) 2022-11-18 2024-05-30 キヤノン株式会社 光電変換装置
JP7686683B2 (ja) * 2023-02-10 2025-06-02 キヤノン株式会社 撮像装置、撮像装置の制御方法およびプログラム
US20240402311A1 (en) * 2023-05-30 2024-12-05 Canon Kabushiki Kaisha Photoelectric conversion apparatus, movable apparatus, control method, and storage medium
JP7753292B2 (ja) * 2023-05-30 2025-10-14 キヤノン株式会社 光電変換装置、移動体、光電変換方法、及びコンピュータプログラム
JP2025006098A (ja) * 2023-06-29 2025-01-17 キヤノン株式会社 撮像システム、移動体、撮像方法、及びコンピュータプログラム
JP2025018749A (ja) * 2023-07-27 2025-02-06 キヤノン株式会社 撮像装置、制御方法、プログラム及び記憶媒体
JP2025040787A (ja) * 2023-09-12 2025-03-25 キヤノン株式会社 光電変換装置、移動体、制御方法、及びコンピュータプログラム

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003101870A (ja) 2001-09-21 2003-04-04 Konica Corp 撮像装置
JP2015092660A (ja) 2013-10-01 2015-05-14 株式会社ニコン 撮像装置、撮像装置の制御方法、電子機器、電子機器の制御方法、及び制御プログラム
JP2015159518A (ja) 2014-02-25 2015-09-03 キヤノン株式会社 撮像装置およびその制御方法とプログラム
JP2018198388A (ja) 2017-05-24 2018-12-13 キヤノン株式会社 固体撮像素子、撮像装置及び撮像方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09210778A (ja) * 1996-02-07 1997-08-15 Kyocera Corp 測光・調光兼用回路
JP5432657B2 (ja) 2009-10-02 2014-03-05 キヤノン株式会社 撮像装置、記憶装置、及び制御方法
JP6531108B2 (ja) * 2013-10-23 2019-06-12 ナノヴィジョン・テクノロジー・（ベイジン）・カンパニー・リミテッド 光子計数に基づく放射線結像システム、方法、及びそのデバイス
JP6598039B2 (ja) * 2015-12-07 2019-10-30 パナソニックＩｐマネジメント株式会社 固体撮像装置及び固体撮像装置の駆動方法
US10785423B2 (en) * 2017-12-07 2020-09-22 Canon Kabushiki Kaisha Image sensor, image capturing apparatus, and image capturing method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003101870A (ja) 2001-09-21 2003-04-04 Konica Corp 撮像装置
JP2015092660A (ja) 2013-10-01 2015-05-14 株式会社ニコン 撮像装置、撮像装置の制御方法、電子機器、電子機器の制御方法、及び制御プログラム
JP2015159518A (ja) 2014-02-25 2015-09-03 キヤノン株式会社 撮像装置およびその制御方法とプログラム
JP2018198388A (ja) 2017-05-24 2018-12-13 キヤノン株式会社 固体撮像素子、撮像装置及び撮像方法

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US11336858B2 (en) 2022-05-17
JP2020155886A (ja) 2020-09-24

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