JP7246148B2 - スパッタ装置 - Google Patents

スパッタ装置 Download PDF

Info

Publication number
JP7246148B2
JP7246148B2 JP2018167204A JP2018167204A JP7246148B2 JP 7246148 B2 JP7246148 B2 JP 7246148B2 JP 2018167204 A JP2018167204 A JP 2018167204A JP 2018167204 A JP2018167204 A JP 2018167204A JP 7246148 B2 JP7246148 B2 JP 7246148B2
Authority
JP
Japan
Prior art keywords
inner member
opening
substrate
tapered portion
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018167204A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020002456A (ja
Inventor
純一 武井
浩 曽根
直行 鈴木
伸二 居本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to US16/446,441 priority Critical patent/US11414747B2/en
Priority to KR1020190074847A priority patent/KR102236048B1/ko
Priority to CN201910547442.0A priority patent/CN110643956B/zh
Priority to TW108121904A priority patent/TW202018109A/zh
Publication of JP2020002456A publication Critical patent/JP2020002456A/ja
Application granted granted Critical
Publication of JP7246148B2 publication Critical patent/JP7246148B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP2018167204A 2018-06-26 2018-09-06 スパッタ装置 Active JP7246148B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US16/446,441 US11414747B2 (en) 2018-06-26 2019-06-19 Sputtering device
KR1020190074847A KR102236048B1 (ko) 2018-06-26 2019-06-24 스퍼터링 장치
CN201910547442.0A CN110643956B (zh) 2018-06-26 2019-06-24 溅射装置
TW108121904A TW202018109A (zh) 2018-06-26 2019-06-24 濺鍍裝置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018120503 2018-06-26
JP2018120503 2018-06-26

Publications (2)

Publication Number Publication Date
JP2020002456A JP2020002456A (ja) 2020-01-09
JP7246148B2 true JP7246148B2 (ja) 2023-03-27

Family

ID=69098831

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018167204A Active JP7246148B2 (ja) 2018-06-26 2018-09-06 スパッタ装置

Country Status (4)

Country Link
JP (1) JP7246148B2 (ko)
KR (1) KR102236048B1 (ko)
CN (1) CN110643956B (ko)
TW (1) TW202018109A (ko)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013094200A1 (ja) 2011-12-22 2013-06-27 キヤノンアネルバ株式会社 基板処理装置
JP2013253316A (ja) 2012-05-09 2013-12-19 Iza Corp スパッタリング装置
WO2014103168A1 (ja) 2012-12-26 2014-07-03 キヤノンアネルバ株式会社 基板処理装置
WO2015125241A1 (ja) 2014-02-19 2015-08-27 堺ディスプレイプロダクト株式会社 スパッタリング装置
JP2017172028A (ja) 2016-03-25 2017-09-28 日新電機株式会社 マスクフレーム及び真空処理装置
JP2018090876A (ja) 2016-12-06 2018-06-14 東京エレクトロン株式会社 成膜装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57111031A (en) * 1980-12-27 1982-07-10 Clarion Co Ltd Sputtering device
US4523985A (en) * 1983-12-22 1985-06-18 Sputtered Films, Inc. Wafer processing machine
US6296747B1 (en) * 2000-06-22 2001-10-02 Applied Materials, Inc. Baffled perforated shield in a plasma sputtering reactor
JP4830901B2 (ja) 2007-02-22 2011-12-07 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の成長方法およびｉｉｉ族窒化物結晶
CN101567304B (zh) * 2008-04-23 2010-12-01 北京北方微电子基地设备工艺研究中心有限责任公司 一种气体分配装置及应用该分配装置的半导体处理设备
US20110308458A1 (en) * 2010-06-21 2011-12-22 Semes Co., Ltd. Thin Film Deposition Apparatus
JP6224677B2 (ja) * 2012-05-09 2017-11-01 シーゲイト テクノロジー エルエルシーＳｅａｇａｔｅ Ｔｅｃｈｎｏｌｏｇｙ ＬＬＣ スパッタリング装置
JP6056403B2 (ja) * 2012-11-15 2017-01-11 東京エレクトロン株式会社 成膜装置
US9048373B2 (en) * 2013-06-13 2015-06-02 Tsmc Solar Ltd. Evaporation apparatus and method
JP2015067856A (ja) 2013-09-27 2015-04-13 シーゲイト テクノロジー エルエルシー マグネトロンスパッタ装置
CN205501411U (zh) * 2016-01-20 2016-08-24 红日应用材料有限公司 用于沉积设备的基板遮蔽结构

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013094200A1 (ja) 2011-12-22 2013-06-27 キヤノンアネルバ株式会社 基板処理装置
JP2013253316A (ja) 2012-05-09 2013-12-19 Iza Corp スパッタリング装置
WO2014103168A1 (ja) 2012-12-26 2014-07-03 キヤノンアネルバ株式会社 基板処理装置
WO2015125241A1 (ja) 2014-02-19 2015-08-27 堺ディスプレイプロダクト株式会社 スパッタリング装置
JP2017172028A (ja) 2016-03-25 2017-09-28 日新電機株式会社 マスクフレーム及び真空処理装置
JP2018090876A (ja) 2016-12-06 2018-06-14 東京エレクトロン株式会社 成膜装置

Also Published As

Publication number Publication date
CN110643956A (zh) 2020-01-03
CN110643956B (zh) 2022-01-07
KR20200001511A (ko) 2020-01-06
KR102236048B1 (ko) 2021-04-02
TW202018109A (zh) 2020-05-16
JP2020002456A (ja) 2020-01-09

Similar Documents

Publication Publication Date Title
CN107017181B (zh) 立式热处理装置
US8986495B2 (en) Plasma processing apparatus
US10763138B2 (en) Adjustment plate and apparatus for treating substrate having the same
KR101867133B1 (ko) 회전 테이블을 이용하는 기판 처리 장치
US8852386B2 (en) Plasma processing apparatus
US8852387B2 (en) Plasma processing apparatus and shower head
US8747609B2 (en) Plasma processing apparatus and shower head
US10283398B2 (en) Substrate placing table
JP7134009B2 (ja) 成膜装置および成膜方法
US20210118653A1 (en) Film formation device and film formation method
KR20230088467A (ko) 열적 균일 증착 스테이션
JP2023115151A (ja) 成膜装置および成膜方法
JP7246148B2 (ja) スパッタ装置
WO2020004104A1 (ja) スパッタ装置
US11414747B2 (en) Sputtering device
JP7257807B2 (ja) スパッタ装置
US20210013004A1 (en) Plasma processing apparatus
KR20220015942A (ko) 기판 처리 장치
US20120090783A1 (en) Plasma processing apparatus and processing gas supply structure thereof
WO2021182125A1 (ja) 成膜装置
KR20230100555A (ko) 기판 처리 장치 및 기판 처리 방법
KR20030062945A (ko) 반도체 제조용 챔버

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20210510

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20220217

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220301

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220408

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220607

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220725

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20221004

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20221130

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230214

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230314

R150 Certificate of patent or registration of utility model

Ref document number: 7246148

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150