JP7134009B2 - 成膜装置および成膜方法 - Google Patents
成膜装置および成膜方法 Download PDFInfo
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
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- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
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- H01J37/3435—Target holders (includes backing plates and endblocks)
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
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Description
まず、第1の実施形態について説明する。
図1は、第1の実施形態に係る成膜装置を示す縦断面図である。
本実施形態の成膜装置1は、基板W上に反応性スパッタリングによって膜を形成するものである。成膜装置1は、処理チャンバ10と、基板支持部12と、基板移動機構14と、ターゲットホルダ16と、電源18と、スパッタ粒子遮蔽部材20と、スパッタリングガス導入部22と、反応ガス導入部24と、排気装置26とを有している。基板Wとしては、例えば半導体ウエハを挙げることができるがこれに限定されない。
まず、ゲートバルブ30を開け、処理チャンバ10に隣接する搬送室(図示せず)から、搬送装置(図示せず)により処理チャンバ10内の反応室S2に基板Wを搬入し、基板支持部12に載置する。
次に、第2の実施形態について説明する。
図4は、第2の実施形態に係る成膜装置を示す縦断面図である。
本実施形態の成膜装置1′は、基板移動機構14の代わりに基板移動機構14′を有する他は、図1に示す成膜装置1と同様に構成されている。
以上、実施形態について説明したが、今回開示された実施形態は、全ての点で例示であって制限的なものではないと考えられるべきである。上記の実施形態は、添付の特許請求の範囲およびその主旨を逸脱することなく、様々な形態で省略、置換、変更されてもよい。
10;処理チャンバ
10a;チャンバ本体
10b;蓋体
12;基板支持部
14,14′;基板移動機構
16;ターゲットホルダ
18;電源
20;スパッタ粒子遮蔽部材
22;スパッタリングガス導入部
24;反応ガス導入部
26;排気機構
28;ターゲット
36;スパッタ粒子遮蔽板
37;スパッタ粒子通過孔
38;シールド部材
S1;放電空間
S2;反応室
S3;反応空間
W;基板
Claims (8)
- 反応性スパッタリングにより膜を形成する成膜装置であって、
基板に対して成膜処理が行われる処理チャンバと、
前記処理チャンバ内で、ターゲットからスパッタ粒子を放出させるスパッタ機構と、
前記スパッタ機構により放出されたスパッタ粒子が放出される放電空間を遮蔽するスパッタ粒子遮蔽部材と、
前記処理チャンバ内の前記放電空間とは別個に設けられた反応室と、
前記反応室内で基板を支持する基板支持部と、
前記基板支持部に支持された基板を移動させる移動機構と、
前記スパッタ粒子遮蔽部材に設けられ、前記基板よりも狭い面積を有し、前記スパッタ粒子を前記反応室の基板に向けて通過させるスパッタ粒子通過孔と、
前記反応室内に反応ガスを導入する反応ガス導入部と、
を具備し、
前記基板は、前記基板支持部に水平に配置され、
前記基板移動機構は、前記基板を水平面内に移動させ、
前記スパッタ粒子遮蔽部材は、前記基板の直上に配置され、前記スパッタ粒子通過孔が形成されたスパッタ粒子遮蔽板を有し、
前記反応室の前記スパッタ粒子遮蔽板と前記基板との間に、前記スパッタ粒子と前記反応ガスが反応する反応空間が規定され、
前記スパッタ粒子遮蔽板と前記基板との間の距離を、前記反応空間に十分大きいコンダクタンスで反応ガスが供給可能なように2mm以上とし、
前記スパッタ粒子遮蔽板の前記スパッタ粒子通過孔以外の部分は、前記反応ガスを前記反応空間に導くための整流板として機能し、
前記スパッタ粒子は、前記基板移動機構により前記基板が移動された状態で、前記スパッタ機構により前記放電空間に放出され、前記スパッタ粒子通過孔を通過して前記反応室の前記反応空間に射出され、
前記反応ガスは、前記スパッタ粒子遮蔽板の前記整流板としての機能により層流状態で前記基板上へ安定供給され、
前記反応空間で前記スパッタ粒子と前記反応ガスとが反応され、この反応により生成された反応性スパッタ膜が前記基板上に成膜される、成膜装置。 - 前記スパッタ粒子通過孔の面積は、基板の面積の90%以下である、請求項1に記載の成膜装置。
- 前記スパッタ粒子通過孔の面積は、基板の面積の10~50%である、請求項2に記載の成膜装置。
- 前記スパッタ機構は、
前記スパッタ粒子を放出させるためのターゲットを保持するターゲット保持部と、
前記放電空間にスパッタリングガスを導入するスパッタリングガス導入部と、
前記ターゲット保持部に電圧を印加する電源と
を有し、
前記ターゲット保持部に電圧が印加されることにより、前記ターゲットの周囲で前記スパッタリングガスが解離し、解離した前記スパッタリングのイオンが前記ターゲットに衝突し、スパッタ粒子を放出させる、請求項1から請求項3のいずれか1項に記載の成膜装置。 - 前記ターゲット保持部は、前記ターゲットを前記基板に対して斜めに保持し、前記ターゲットから放出された前記スパッタ粒子は、前記基板に対して斜めに照射される、請求項4に記載の成膜装置。
- 前記基板移動機構は、前記基板を直線的に移動させる、請求項1から請求項5のいずれか1項に記載の成膜装置。
- 前記基板移動機構は、前記基板を回転させる、請求項1から請求項5のいずれか1項に記載の成膜装置。
- 成膜装置を用いて反応性スパッタリングにより膜を形成する成膜方法であって、
前記成膜装置は、
基板に対して成膜処理が行われる処理チャンバと、
前記処理チャンバ内で、ターゲットからスパッタ粒子を放出させるスパッタ機構と、
前記スパッタ機構により放出されたスパッタ粒子が放出される放電空間を遮蔽するスパッタ粒子遮蔽部材と、
前記処理チャンバ内の前記放電空間とは別個に設けられた反応室と、
前記反応室内で基板を支持する基板支持部と、
前記基板支持部に支持された基板を移動させる移動機構と、
前記スパッタ粒子遮蔽部材に設けられ、前記基板よりも狭い面積を有し、前記スパッタ粒子を前記反応室の基板に向けて通過させるスパッタ粒子通過孔と、
前記反応室内に反応ガスを導入する反応ガス導入部と、
を具備し、
前記基板は、前記基板支持部に水平に配置され、
前記基板移動機構は、前記基板を水平面内に移動させ、
前記スパッタ粒子遮蔽部材は、前記基板の直上に配置され、前記スパッタ粒子通過孔が形成されたスパッタ粒子遮蔽板を有し、
前記反応室の前記スパッタ粒子遮蔽板と前記基板との間に、前記スパッタ粒子と前記反応ガスが反応する反応空間が規定され、
前記スパッタ粒子遮蔽板と前記基板との間の距離を、前記反応空間に十分大きいコンダクタンスで反応ガスが供給可能なように2mm以上とし、
前記スパッタ粒子遮蔽板の前記スパッタ粒子通過孔以外の部分は、前記反応ガスを前記反応空間に導くための整流板として機能し、
前記基板移動機構により前記基板を移動させる工程と、
前記基板を移動させる工程を行いながら、前記スパッタ機構により前記放電空間に前記スパッタ粒子を放出させ、前記スパッタ粒子通過孔を通過させて前記反応室の前記反応空間に射出する工程と、
前記反応ガスを、前記スパッタ粒子遮蔽板の前記整流板としての機能により層流状態で前記基板上へ安定供給する工程と、
前記反応空間で前記スパッタ粒子と前記反応ガスとを反応させる工程と、
前記反応させる工程により生成された反応性スパッタ膜を前記基板上に成膜する工程と
を有する、成膜方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018144448A JP7134009B2 (ja) | 2018-07-31 | 2018-07-31 | 成膜装置および成膜方法 |
TW108125175A TW202020197A (zh) | 2018-07-31 | 2019-07-17 | 成膜裝置及成膜方法 |
CN201910659991.7A CN110777340A (zh) | 2018-07-31 | 2019-07-22 | 成膜装置和成膜方法 |
KR1020190088924A KR102287784B1 (ko) | 2018-07-31 | 2019-07-23 | 성막 장치 및 성막 방법 |
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JP6832130B2 (ja) * | 2016-11-04 | 2021-02-24 | 東京エレクトロン株式会社 | 成膜装置 |
JP7097777B2 (ja) | 2018-08-10 | 2022-07-08 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
US11664207B2 (en) | 2018-08-10 | 2023-05-30 | Tokyo Electron Limited | Film-forming apparatus, film-forming system, and film-forming method |
JP7534044B2 (ja) * | 2020-08-05 | 2024-08-14 | 東京エレクトロン株式会社 | スパッタ装置及び成膜方法 |
KR102573323B1 (ko) * | 2021-03-12 | 2023-08-31 | 한국공학대학교산학협력단 | 사전 산화된 다공성 금속 박막의 제조 장치, 다공성 금속산화물 박막의 제조 방법 및 이에 의해 제조된 다공성 금속산화물 박막 |
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JP2011225951A (ja) * | 2010-04-22 | 2011-11-10 | Sumitomo Electric Ind Ltd | スパッタ成膜装置およびスパッタ成膜方法 |
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