JP7223521B2 - Ｒｆ環境内で加熱される構成要素のための高電力ケーブル - Google Patents

Ｒｆ環境内で加熱される構成要素のための高電力ケーブル Download PDF

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Publication number
JP7223521B2
JP7223521B2 JP2018138106A JP2018138106A JP7223521B2 JP 7223521 B2 JP7223521 B2 JP 7223521B2 JP 2018138106 A JP2018138106 A JP 2018138106A JP 2018138106 A JP2018138106 A JP 2018138106A JP 7223521 B2 JP7223521 B2 JP 7223521B2
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Prior art keywords
substrate support
wires
heating elements
inductor
edge ring
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JP2018138106A
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English (en)
Japanese (ja)
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JP2019029346A5 (enExample
JP2019029346A (ja
Inventor
セイエド・ジャファール・ジャファリアン－テフラニ
ケニス・ウォルター・フィネガン
ショーン・オブライエン
ベンソン・キュー．・トン
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B9/00—Power cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B9/00—Power cables
    • H01B9/006—Constructional features relating to the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Control Of Resistance Heating (AREA)
  • Communication Cables (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Supply And Distribution Of Alternating Current (AREA)
  • Insertion, Bundling And Securing Of Wires For Electric Apparatuses (AREA)
JP2018138106A 2017-07-31 2018-07-24 Ｒｆ環境内で加熱される構成要素のための高電力ケーブル Active JP7223521B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762539065P 2017-07-31 2017-07-31
US62/539,065 2017-07-31
US16/017,357 2018-06-25
US16/017,357 US11837446B2 (en) 2017-07-31 2018-06-25 High power cable for heated components in RF environment

Publications (3)

Publication Number Publication Date
JP2019029346A JP2019029346A (ja) 2019-02-21
JP2019029346A5 JP2019029346A5 (enExample) 2021-09-02
JP7223521B2 true JP7223521B2 (ja) 2023-02-16

Family

ID=65138322

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018138106A Active JP7223521B2 (ja) 2017-07-31 2018-07-24 Ｒｆ環境内で加熱される構成要素のための高電力ケーブル

Country Status (5)

Country Link
US (3) US11837446B2 (enExample)
JP (1) JP7223521B2 (enExample)
KR (2) KR102618643B1 (enExample)
CN (2) CN109326497B (enExample)
TW (1) TWI811228B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11837446B2 (en) * 2017-07-31 2023-12-05 Lam Research Corporation High power cable for heated components in RF environment
US20200090907A1 (en) * 2018-09-18 2020-03-19 Applied Materials, Inc. Systems and processes for plasma tuning
US12002653B2 (en) * 2019-06-20 2024-06-04 Lam Research Corporation Systems and methods for compensating for RF power loss
KR20220110816A (ko) * 2019-12-06 2022-08-09 램 리써치 코포레이션 통합된 rf 필터들을 가진 기판 지지부들
CN119381236A (zh) * 2024-10-29 2025-01-28 北京北方华创微电子装备有限公司 下电极组件及半导体工艺腔室

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006196640A (ja) 2005-01-13 2006-07-27 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2011135052A (ja) 2009-11-24 2011-07-07 Tokyo Electron Ltd プラズマ処理装置
JP2013104945A (ja) 2011-11-11 2013-05-30 Toshiba Corp フレキシブル光電配線モジュール
JP2013175573A (ja) 2012-02-24 2013-09-05 Tokyo Electron Ltd 基板載置台及びプラズマエッチング装置
JP2014075579A (ja) 2012-09-12 2014-04-24 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
JP2014229565A (ja) 2013-05-24 2014-12-08 東京エレクトロン株式会社 プラズマ処理装置及びフィルタユニット
JP2015173027A (ja) 2014-03-11 2015-10-01 東京エレクトロン株式会社 プラズマ処理装置
JP2015220368A (ja) 2014-05-19 2015-12-07 東京エレクトロン株式会社 ヒータ給電機構
JP2016027601A (ja) 2014-06-24 2016-02-18 東京エレクトロン株式会社 載置台及びプラズマ処理装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7777152B2 (en) * 2006-06-13 2010-08-17 Applied Materials, Inc. High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck
TW200832901A (en) * 2007-01-18 2008-08-01 Asustek Comp Inc Filter circuit for reducing EMI of differential signal
CN102217054B (zh) * 2008-11-25 2013-05-08 京瓷株式会社 晶片加热装置、静电卡盘以及晶片加热装置的制造方法
US8742666B2 (en) * 2010-08-06 2014-06-03 Lam Research Corporation Radio frequency (RF) power filters and plasma processing systems including RF power filters
CN103187943B (zh) 2011-12-28 2017-02-08 中微半导体设备(上海)有限公司 一种用于静电吸盘的射频滤波器
JP5905735B2 (ja) * 2012-02-21 2016-04-20 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板温度の設定可能帯域の変更方法
US9224583B2 (en) * 2013-03-15 2015-12-29 Lam Research Corporation System and method for heating plasma exposed surfaces
US9449797B2 (en) * 2013-05-07 2016-09-20 Lam Research Corporation Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface
US9312832B2 (en) 2014-07-23 2016-04-12 Lam Research Corporation High power filter with single adjust for multiple channels
JP6452449B2 (ja) * 2015-01-06 2019-01-16 東京エレクトロン株式会社 載置台及び基板処理装置
US10879041B2 (en) * 2015-09-04 2020-12-29 Applied Materials, Inc. Method and apparatus of achieving high input impedance without using ferrite materials for RF filter applications in plasma chambers
US10044338B2 (en) * 2015-10-15 2018-08-07 Lam Research Corporation Mutually induced filters
US10283330B2 (en) * 2016-07-25 2019-05-07 Lam Research Corporation Systems and methods for achieving a pre-determined factor associated with an edge region within a plasma chamber by synchronizing main and edge RF generators
US11837446B2 (en) * 2017-07-31 2023-12-05 Lam Research Corporation High power cable for heated components in RF environment

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006196640A (ja) 2005-01-13 2006-07-27 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2011135052A (ja) 2009-11-24 2011-07-07 Tokyo Electron Ltd プラズマ処理装置
JP2013104945A (ja) 2011-11-11 2013-05-30 Toshiba Corp フレキシブル光電配線モジュール
JP2013175573A (ja) 2012-02-24 2013-09-05 Tokyo Electron Ltd 基板載置台及びプラズマエッチング装置
JP2014075579A (ja) 2012-09-12 2014-04-24 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
JP2014229565A (ja) 2013-05-24 2014-12-08 東京エレクトロン株式会社 プラズマ処理装置及びフィルタユニット
JP2015173027A (ja) 2014-03-11 2015-10-01 東京エレクトロン株式会社 プラズマ処理装置
JP2015220368A (ja) 2014-05-19 2015-12-07 東京エレクトロン株式会社 ヒータ給電機構
JP2016027601A (ja) 2014-06-24 2016-02-18 東京エレクトロン株式会社 載置台及びプラズマ処理装置

Also Published As

Publication number Publication date
US20190035608A1 (en) 2019-01-31
KR102618643B1 (ko) 2023-12-26
TW201921416A (zh) 2019-06-01
KR20190013510A (ko) 2019-02-11
JP2019029346A (ja) 2019-02-21
CN109326497A (zh) 2019-02-12
US12217944B2 (en) 2025-02-04
US11837446B2 (en) 2023-12-05
CN109326497B (zh) 2023-11-14
KR102818730B1 (ko) 2025-06-10
CN117577501A (zh) 2024-02-20
US20250183015A1 (en) 2025-06-05
TWI811228B (zh) 2023-08-11
KR20240004160A (ko) 2024-01-11
US20240105429A1 (en) 2024-03-28

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