CN109326497B - 用于射频环境中的加热元件的高功率电缆 - Google Patents

用于射频环境中的加热元件的高功率电缆 Download PDF

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Publication number
CN109326497B
CN109326497B CN201810832761.1A CN201810832761A CN109326497B CN 109326497 B CN109326497 B CN 109326497B CN 201810832761 A CN201810832761 A CN 201810832761A CN 109326497 B CN109326497 B CN 109326497B
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China
Prior art keywords
wires
substrate support
edge ring
heating element
isolation device
Prior art date
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CN201810832761.1A
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English (en)
Chinese (zh)
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CN109326497A (zh
Inventor
塞得·亚法·亚法莉安-特哈利
肯尼思·沃尔特·芬尼根
肖恩·奥布赖恩
班森·Q·唐
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Lam Research Corp
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Lam Research Corp
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B9/00—Power cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B9/00—Power cables
    • H01B9/006—Constructional features relating to the conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Control Of Resistance Heating (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Insertion, Bundling And Securing Of Wires For Electric Apparatuses (AREA)
  • Supply And Distribution Of Alternating Current (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Communication Cables (AREA)
CN201810832761.1A 2017-07-31 2018-07-26 用于射频环境中的加热元件的高功率电缆 Active CN109326497B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202311377184.9A CN117577501A (zh) 2017-07-31 2018-07-26 用于射频环境中的加热元件的高功率电缆

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762539065P 2017-07-31 2017-07-31
US62/539,065 2017-07-31
US16/017,357 2018-06-25
US16/017,357 US11837446B2 (en) 2017-07-31 2018-06-25 High power cable for heated components in RF environment

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202311377184.9A Division CN117577501A (zh) 2017-07-31 2018-07-26 用于射频环境中的加热元件的高功率电缆

Publications (2)

Publication Number Publication Date
CN109326497A CN109326497A (zh) 2019-02-12
CN109326497B true CN109326497B (zh) 2023-11-14

Family

ID=65138322

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201810832761.1A Active CN109326497B (zh) 2017-07-31 2018-07-26 用于射频环境中的加热元件的高功率电缆
CN202311377184.9A Pending CN117577501A (zh) 2017-07-31 2018-07-26 用于射频环境中的加热元件的高功率电缆

Family Applications After (1)

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CN202311377184.9A Pending CN117577501A (zh) 2017-07-31 2018-07-26 用于射频环境中的加热元件的高功率电缆

Country Status (5)

Country Link
US (3) US11837446B2 (enExample)
JP (1) JP7223521B2 (enExample)
KR (2) KR102618643B1 (enExample)
CN (2) CN109326497B (enExample)
TW (1) TWI811228B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11837446B2 (en) * 2017-07-31 2023-12-05 Lam Research Corporation High power cable for heated components in RF environment
US20200090907A1 (en) * 2018-09-18 2020-03-19 Applied Materials, Inc. Systems and processes for plasma tuning
WO2020256899A1 (en) * 2019-06-20 2020-12-24 Lam Research Corporation Systems and methods for compensating for rf power loss
KR20220110816A (ko) * 2019-12-06 2022-08-09 램 리써치 코포레이션 통합된 rf 필터들을 가진 기판 지지부들
CN119381236A (zh) * 2024-10-29 2025-01-28 北京北方华创微电子装备有限公司 下电极组件及半导体工艺腔室

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JP2006196640A (ja) * 2005-01-13 2006-07-27 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
CN102076162A (zh) * 2009-11-24 2011-05-25 东京毅力科创株式会社 等离子处理装置
JP2013104945A (ja) * 2011-11-11 2013-05-30 Toshiba Corp フレキシブル光電配線モジュール
CN103187943A (zh) * 2011-12-28 2013-07-03 中微半导体设备(上海)有限公司 一种用于静电吸盘的射频滤波器
CN104918400A (zh) * 2014-03-11 2015-09-16 东京毅力科创株式会社 等离子体处理装置

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US7777152B2 (en) * 2006-06-13 2010-08-17 Applied Materials, Inc. High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck
TW200832901A (en) * 2007-01-18 2008-08-01 Asustek Comp Inc Filter circuit for reducing EMI of differential signal
CN102217054B (zh) * 2008-11-25 2013-05-08 京瓷株式会社 晶片加热装置、静电卡盘以及晶片加热装置的制造方法
US8742666B2 (en) * 2010-08-06 2014-06-03 Lam Research Corporation Radio frequency (RF) power filters and plasma processing systems including RF power filters
JP5905735B2 (ja) * 2012-02-21 2016-04-20 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板温度の設定可能帯域の変更方法
JP5917946B2 (ja) 2012-02-24 2016-05-18 東京エレクトロン株式会社 基板載置台及びプラズマエッチング装置
JP6257071B2 (ja) 2012-09-12 2018-01-10 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
US9224583B2 (en) * 2013-03-15 2015-12-29 Lam Research Corporation System and method for heating plasma exposed surfaces
US9449797B2 (en) 2013-05-07 2016-09-20 Lam Research Corporation Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface
JP6050722B2 (ja) 2013-05-24 2016-12-21 東京エレクトロン株式会社 プラズマ処理装置及びフィルタユニット
JP6219229B2 (ja) 2014-05-19 2017-10-25 東京エレクトロン株式会社 ヒータ給電機構
JP6442296B2 (ja) * 2014-06-24 2018-12-19 東京エレクトロン株式会社 載置台及びプラズマ処理装置
US9312832B2 (en) 2014-07-23 2016-04-12 Lam Research Corporation High power filter with single adjust for multiple channels
JP6452449B2 (ja) * 2015-01-06 2019-01-16 東京エレクトロン株式会社 載置台及び基板処理装置
US10879041B2 (en) * 2015-09-04 2020-12-29 Applied Materials, Inc. Method and apparatus of achieving high input impedance without using ferrite materials for RF filter applications in plasma chambers
US10044338B2 (en) * 2015-10-15 2018-08-07 Lam Research Corporation Mutually induced filters
US10283330B2 (en) * 2016-07-25 2019-05-07 Lam Research Corporation Systems and methods for achieving a pre-determined factor associated with an edge region within a plasma chamber by synchronizing main and edge RF generators
US11837446B2 (en) * 2017-07-31 2023-12-05 Lam Research Corporation High power cable for heated components in RF environment

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Publication number Priority date Publication date Assignee Title
JP2006196640A (ja) * 2005-01-13 2006-07-27 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
CN102076162A (zh) * 2009-11-24 2011-05-25 东京毅力科创株式会社 等离子处理装置
JP2013104945A (ja) * 2011-11-11 2013-05-30 Toshiba Corp フレキシブル光電配線モジュール
CN103187943A (zh) * 2011-12-28 2013-07-03 中微半导体设备(上海)有限公司 一种用于静电吸盘的射频滤波器
CN104918400A (zh) * 2014-03-11 2015-09-16 东京毅力科创株式会社 等离子体处理装置

Also Published As

Publication number Publication date
TW201921416A (zh) 2019-06-01
US20250183015A1 (en) 2025-06-05
TWI811228B (zh) 2023-08-11
CN117577501A (zh) 2024-02-20
US12217944B2 (en) 2025-02-04
KR20190013510A (ko) 2019-02-11
KR102818730B1 (ko) 2025-06-10
US20190035608A1 (en) 2019-01-31
KR20240004160A (ko) 2024-01-11
CN109326497A (zh) 2019-02-12
JP2019029346A (ja) 2019-02-21
US20240105429A1 (en) 2024-03-28
US11837446B2 (en) 2023-12-05
KR102618643B1 (ko) 2023-12-26
JP7223521B2 (ja) 2023-02-16

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