JP7188690B2 - プロジェクター - Google Patents

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Publication number
JP7188690B2
JP7188690B2 JP2018155398A JP2018155398A JP7188690B2 JP 7188690 B2 JP7188690 B2 JP 7188690B2 JP 2018155398 A JP2018155398 A JP 2018155398A JP 2018155398 A JP2018155398 A JP 2018155398A JP 7188690 B2 JP7188690 B2 JP 7188690B2
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JP
Japan
Prior art keywords
light
layer
substrate
electrode
projector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018155398A
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English (en)
Japanese (ja)
Other versions
JP2020030308A5 (enExample
JP2020030308A (ja
Inventor
康一郎 赤坂
大毅 西岡
峻介 石沢
貴史 野田
保貴 今井
克巳 岸野
浩康 加▲瀬▼谷
剛 金子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Sophia School Corp
Original Assignee
Seiko Epson Corp
Sophia School Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Sophia School Corp filed Critical Seiko Epson Corp
Priority to JP2018155398A priority Critical patent/JP7188690B2/ja
Priority to US16/546,665 priority patent/US20200067271A1/en
Publication of JP2020030308A publication Critical patent/JP2020030308A/ja
Publication of JP2020030308A5 publication Critical patent/JP2020030308A5/ja
Application granted granted Critical
Publication of JP7188690B2 publication Critical patent/JP7188690B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • H01S5/4093—Red, green and blue [RGB] generated directly by laser action or by a combination of laser action with nonlinear frequency conversion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/20—Lamp housings
    • G03B21/2006—Lamp housings characterised by the light source
    • G03B21/2013—Plural light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B21/00—Projectors or projection-type viewers; Accessories therefor
    • G03B21/14—Details
    • G03B21/20—Lamp housings
    • G03B21/2006—Lamp housings characterised by the light source
    • G03B21/2033—LED or laser light sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Liquid Crystal (AREA)
  • Projection Apparatus (AREA)
  • Transforming Electric Information Into Light Information (AREA)
  • Semiconductor Lasers (AREA)
JP2018155398A 2018-08-22 2018-08-22 プロジェクター Active JP7188690B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2018155398A JP7188690B2 (ja) 2018-08-22 2018-08-22 プロジェクター
US16/546,665 US20200067271A1 (en) 2018-08-22 2019-08-21 Projector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018155398A JP7188690B2 (ja) 2018-08-22 2018-08-22 プロジェクター

Publications (3)

Publication Number Publication Date
JP2020030308A JP2020030308A (ja) 2020-02-27
JP2020030308A5 JP2020030308A5 (enExample) 2021-09-02
JP7188690B2 true JP7188690B2 (ja) 2022-12-13

Family

ID=69586446

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018155398A Active JP7188690B2 (ja) 2018-08-22 2018-08-22 プロジェクター

Country Status (2)

Country Link
US (1) US20200067271A1 (enExample)
JP (1) JP7188690B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6891870B2 (ja) * 2018-12-28 2021-06-18 セイコーエプソン株式会社 プロジェクター
JP6973452B2 (ja) * 2019-07-30 2021-12-01 セイコーエプソン株式会社 発光装置、光源モジュールおよびプロジェクター
JP7616599B2 (ja) * 2021-02-26 2025-01-17 セイコーエプソン株式会社 発光装置およびプロジェクター
JP7631976B2 (ja) * 2021-03-29 2025-02-19 セイコーエプソン株式会社 発光装置、プロジェクター、およびディスプレイ
JP7725917B2 (ja) 2021-07-29 2025-08-20 セイコーエプソン株式会社 発光装置およびプロジェクター
EP4661223A1 (en) 2023-02-02 2025-12-10 Sony Semiconductor Solutions Corporation Light source device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008306165A (ja) 2007-05-07 2008-12-18 Canon Inc 垂直共振器型面発光レーザ
JP2009542560A (ja) 2006-03-10 2009-12-03 エステイーシー．ユーエヌエム ＩＩＩ族窒化物半導体基板材料及びデバイスにおけるＧａＮナノワイヤーのパルス状成長及び応用
JP2010219307A (ja) 2009-03-17 2010-09-30 Seiko Epson Corp 光源装置、プロジェクター
US20110266577A1 (en) 2008-12-30 2011-11-03 Snu R&Db Foundation Organic electroluminescence device and method of manufacturing same
US20160164045A1 (en) 2013-07-08 2016-06-09 Corning Precision Materials Co., Ltd. Light extraction substrate for organic light emitting device, fabrication method therefor and organic light emitting device including same

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JP2004354617A (ja) * 2003-05-28 2004-12-16 Sharp Corp フォトニック結晶とその製造方法
TWI500072B (zh) * 2004-08-31 2015-09-11 Sophia School Corp 發光元件之製造方法
TW200632253A (en) * 2004-11-16 2006-09-16 Canon Kk Light-emitting photonic device
CN101595565B (zh) * 2006-09-18 2013-03-27 昆南诺股份有限公司 在垂直半导体结构上制造精密垂直和水平层的方法
US8152317B2 (en) * 2007-12-26 2012-04-10 Victor Company Of Japan, Limited Light source device, lighting device and image display device
JP4968959B2 (ja) * 2008-03-06 2012-07-04 キヤノン株式会社 フォトニック結晶および該フォトニック結晶を用いた面発光レーザ
CN102187479B (zh) * 2008-09-01 2014-06-18 学校法人上智学院 半导体光学元件阵列及其制造方法
WO2011049018A1 (ja) * 2009-10-23 2011-04-28 日本電気株式会社 発光素子、およびそれを備えた投写型表示装置
JP5527327B2 (ja) * 2009-10-30 2014-06-18 日本電気株式会社 発光素子、光源装置及び投射型表示装置
CN102386200B (zh) * 2010-08-27 2014-12-31 财团法人工业技术研究院 发光单元阵列与投影系统
KR101710159B1 (ko) * 2010-09-14 2017-03-08 삼성전자주식회사 Ⅲ족 질화물 나노로드 발광소자 및 그 제조 방법
JPWO2012172858A1 (ja) * 2011-06-17 2015-02-23 日本電気株式会社 光学素子、光源装置及び投射型表示装置
WO2013046872A1 (ja) * 2011-09-27 2013-04-04 日本電気株式会社 光学素子、光源装置及び投射型表示装置
TWI476953B (zh) * 2012-08-10 2015-03-11 Univ Nat Taiwan 半導體發光元件及其製作方法
US9130347B2 (en) * 2012-11-02 2015-09-08 The Regents Of The University Of California Nanopillar photonic crystal lasers
DE102013104273A1 (de) * 2013-04-26 2014-10-30 Osram Opto Semiconductors Gmbh Anordnung mit säulenartiger Struktur und einer aktiven Zone
KR102212557B1 (ko) * 2014-11-03 2021-02-08 삼성전자주식회사 나노구조 반도체 발광소자
GB201701829D0 (en) * 2017-02-03 2017-03-22 Norwegian Univ Of Science And Tech (Ntnu) Device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009542560A (ja) 2006-03-10 2009-12-03 エステイーシー．ユーエヌエム ＩＩＩ族窒化物半導体基板材料及びデバイスにおけるＧａＮナノワイヤーのパルス状成長及び応用
JP2008306165A (ja) 2007-05-07 2008-12-18 Canon Inc 垂直共振器型面発光レーザ
US20110266577A1 (en) 2008-12-30 2011-11-03 Snu R&Db Foundation Organic electroluminescence device and method of manufacturing same
JP2010219307A (ja) 2009-03-17 2010-09-30 Seiko Epson Corp 光源装置、プロジェクター
US20160164045A1 (en) 2013-07-08 2016-06-09 Corning Precision Materials Co., Ltd. Light extraction substrate for organic light emitting device, fabrication method therefor and organic light emitting device including same

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Publication number Publication date
JP2020030308A (ja) 2020-02-27
US20200067271A1 (en) 2020-02-27

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