JP7178935B2 - グラフェン構造体を形成する方法および装置 - Google Patents

グラフェン構造体を形成する方法および装置 Download PDF

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JP7178935B2
JP7178935B2 JP2019049093A JP2019049093A JP7178935B2 JP 7178935 B2 JP7178935 B2 JP 7178935B2 JP 2019049093 A JP2019049093 A JP 2019049093A JP 2019049093 A JP2019049093 A JP 2019049093A JP 7178935 B2 JP7178935 B2 JP 7178935B2
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gas
substrate
processed
microwave
plasma
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JP2020147839A (ja
JP2020147839A5 (https=
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亮太 井福
貴士 松本
正仁 杉浦
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to KR1020217032269A priority patent/KR102650973B1/ko
Priority to US17/593,220 priority patent/US12014907B2/en
Priority to PCT/JP2020/007748 priority patent/WO2020189202A1/ja
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    • C—CHEMISTRY; METALLURGY
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    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/186—Preparation by chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0209—Pretreatment of the material to be coated by heating
    • C23C16/0218—Pretreatment of the material to be coated by heating in a reactive atmosphere
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
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    • H—ELECTRICITY
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    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
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    • H01J37/32—Gas-filled discharge tubes
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    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
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    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
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    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
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    • H10P14/69—Inorganic materials
    • H10P14/6902—Inorganic materials composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon
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    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/038—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers covering conductive structures
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    • H10P14/3202—Materials thereof
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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
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  • Analytical Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
JP2019049093A 2019-03-15 2019-03-15 グラフェン構造体を形成する方法および装置 Active JP7178935B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2019049093A JP7178935B2 (ja) 2019-03-15 2019-03-15 グラフェン構造体を形成する方法および装置
KR1020217032269A KR102650973B1 (ko) 2019-03-15 2020-02-26 그래핀 구조체를 형성하는 방법 및 장치
US17/593,220 US12014907B2 (en) 2019-03-15 2020-02-26 Method and device for forming graphene structure
PCT/JP2020/007748 WO2020189202A1 (ja) 2019-03-15 2020-02-26 グラフェン構造体を形成する方法および装置

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JP2019049093A JP7178935B2 (ja) 2019-03-15 2019-03-15 グラフェン構造体を形成する方法および装置

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JP2020147839A5 JP2020147839A5 (https=) 2022-01-06
JP7178935B2 true JP7178935B2 (ja) 2022-11-28

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Publication number Priority date Publication date Assignee Title
JP2022079159A (ja) * 2020-11-16 2022-05-26 東京エレクトロン株式会社 基板処理方法および基板処理装置
US11515163B2 (en) * 2021-01-06 2022-11-29 Applied Materials, Inc. Low temperature graphene growth
JP2022178748A (ja) * 2021-05-21 2022-12-02 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP2024004544A (ja) 2022-06-29 2024-01-17 東京エレクトロン株式会社 基板処理方法および基板処理装置

Citations (4)

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JP2013100205A (ja) 2011-11-09 2013-05-23 Tokyo Electron Ltd 前処理方法、グラフェンの形成方法及びグラフェン製造装置
JP2014231455A (ja) 2013-05-29 2014-12-11 東京エレクトロン株式会社 グラフェンの生成方法
JP2016520032A (ja) 2013-05-08 2016-07-11 マックス−プランク−ゲゼルシャフト ツア フェーデルンク デア ヴィッセンシャフテン エー．ファオ． 電荷キャリア移動度が非常に高いグラフェン及びその製造方法
JP2017521339A (ja) 2014-05-05 2017-08-03 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 化学堆積による一貫したグラフェン成長のための基板前処理

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US8119032B2 (en) * 2006-02-07 2012-02-21 President And Fellows Of Harvard College Gas-phase functionalization of surfaces including carbon-based surfaces
JP5026397B2 (ja) 2007-11-27 2012-09-12 株式会社半導体エネルギー研究所 成膜装置及び成膜方法
WO2010006000A1 (en) * 2008-07-08 2010-01-14 Sandisk 3D, Llc Carbon-based resistivity-switching materials and methods of forming the same
WO2011025045A1 (ja) * 2009-08-31 2011-03-03 独立行政法人科学技術振興機構 グラフェン薄膜とその製造方法
WO2015054138A1 (en) * 2013-10-10 2015-04-16 William Marsh Rice University Improved fatty acid productivity
KR101614322B1 (ko) * 2014-07-07 2016-04-21 재단법인 나노기반소프트일렉트로닉스연구단 층수가 제어된 그래핀의 제조방법 및 그를 이용한 전자소자의 제조방법
US9382118B2 (en) * 2014-11-11 2016-07-05 Hanwha Techwin Co., Ltd. Method of manufacturing graphene
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Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013100205A (ja) 2011-11-09 2013-05-23 Tokyo Electron Ltd 前処理方法、グラフェンの形成方法及びグラフェン製造装置
JP2016520032A (ja) 2013-05-08 2016-07-11 マックス−プランク−ゲゼルシャフト ツア フェーデルンク デア ヴィッセンシャフテン エー．ファオ． 電荷キャリア移動度が非常に高いグラフェン及びその製造方法
JP2014231455A (ja) 2013-05-29 2014-12-11 東京エレクトロン株式会社 グラフェンの生成方法
JP2017521339A (ja) 2014-05-05 2017-08-03 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 化学堆積による一貫したグラフェン成長のための基板前処理

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WO2020189202A1 (ja) 2020-09-24
JP2020147839A (ja) 2020-09-17
US12014907B2 (en) 2024-06-18
KR102650973B1 (ko) 2024-03-26
US20220223407A1 (en) 2022-07-14

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