JP7157304B2 - semiconductor equipment - Google Patents

Description

The present disclosure relates to semiconductor devices.

Patent Literature 1 discloses covering a region other than a mounting portion on which a light emitting element is mounted and a connection portion to which a wire is connected with a reflective frame. Further, it is disclosed that a silver plating layer is arranged on the upper surfaces of the mounting portion and the connecting portion.

WO2011/125346

However, in the light-emitting device of Patent Document 1, sulfur components in the atmosphere passing through the sealing resin are concentrated, for example, at the connecting portion to which the wire is connected, and the silver plating layer on the upper surface of the connecting portion deteriorates. This may break the wire.

Accordingly, an object of one embodiment of the present invention is to provide a semiconductor device in which wire disconnection is suppressed.

A semiconductor device according to one embodiment of the present invention includes a semiconductor element, a pair of leads, and a resin portion that holds the pair of leads, and has a bottom surface where a part of the upper surface of the pair of leads is exposed from the resin portion. A semiconductor device comprising a resin package having a concave portion, a semiconductor element, and wires electrically connecting a pair of leads, wherein the bottom surface of the concave portion has a substantially rectangular shape with four sides when viewed from above. At the bottom surface of the recess, the pair of leads has substantially the same size as the semiconductor element when viewed from above, at least a part of the circumference is surrounded by the resin portion, and an element mounting on which the semiconductor element is mounted a region, a wire connection region spaced apart from the element mounting region via the resin portion and surrounded by the resin portion to which wires are connected; and a first region at least partially surrounded by the resin portion. and, in the bottom surface of the recess, the element mounting region, the wire connection region and the first region are exposed from the resin portion, the other regions are covered with the resin portion, and the wire connection region and the first region are on the upper surface and the shortest distance between the first region and the wire connection region is at least half the length of the longest side of the four sides on the bottom surface of the recess.

According to one embodiment of the present invention, it is possible to provide a semiconductor device in which wire disconnection is suppressed.

1 is a schematic top view of a semiconductor device according to one embodiment; FIG. 1 is a schematic bottom view of a semiconductor device according to one embodiment; FIG. 1 is a schematic top view of a resin package according to one embodiment; FIG. FIG. 1D is a schematic end view along line 1D-1D in FIG. 1A; FIG. 1B is a schematic end view along line 1E-1E in FIG. 1A. FIG. 4 is a schematic top view of a pair of leads according to one embodiment; FIG. 4 is a schematic bottom view of a pair of leads according to one embodiment;

A detailed description will be given below with reference to the drawings. Parts with the same reference numbers that appear in multiple drawings indicate the same or equivalent parts or members.
Furthermore, the following are examples of semiconductor devices for embodying the technical idea of the present invention, and the present invention is not limited to the following. Unless otherwise specified, the dimensions, materials, shapes, relative positions, etc. of components are intended to be illustrative rather than limiting the scope of the present invention. Also, the following description may use terms that indicate specific directions or positions (eg, "upper", "lower" and other terms that include those terms). These terms use relative orientations or positions in the referenced drawings only for the sake of clarity. The sizes and positional relationships of members shown in each drawing may be exaggerated for ease of understanding.

In this specification and drawings, the X direction indicates the lateral direction, and includes both the right direction (X _{1 +} direction) and the left direction (X 1 ₋ direction). Also, the Y direction refers to the vertical direction and includes both the upward direction (Y _{1 +} direction) and the downward direction (Y 2 ₋ direction). Further, the upper surface may refer to a surface that can be seen when viewed from above, or may refer to a surface at the highest position in the height direction. The lower surface may refer to a surface that can be seen when viewed from below, or may refer to a surface at the lowest position in the height direction.

1A is a schematic top view of the semiconductor device 100, FIG. 1B is a schematic bottom view of the semiconductor device 100, and FIG. 1C is a schematic top view showing the resin package 10 before the semiconductor element 1 is mounted. . Hatched portions in FIGS. 1A and 1C indicate a pair of leads 5 exposed from the resin portion 30 . Also, in FIG. 1A, the sealing member 40 is omitted.
A semiconductor device 100 shown in FIG. 1A includes a semiconductor element 1, a resin package 10 having a recess 2, and wires 6 electrically connecting the resin package 10 and a light emitting element.

[Semiconductor device 1]
The semiconductor element 1 includes, for example, a light-emitting element such as a light-emitting diode or a laser diode, and a protective element such as a Zener diode. The semiconductor element 1 is mounted on one area (an element mounting area 11 to be described later) on the top surface of the pair of leads 5 on the bottom surface of the recess 2 . By placing the semiconductor element 1 on the upper surfaces of the pair of leads, the heat generated by the semiconductor element 1 can be efficiently radiated to the pair of leads 5 side. Semiconductor element 1 is electrically connected to resin package 10 via wires 6 . As the semiconductor element 1, for example, a semiconductor element having a pair of positive and negative electrodes located on the upper surface, or a semiconductor element having electrodes on the upper surface and the lower surface are preferably used.

In the semiconductor device 100 shown in FIG. 1A, the semiconductor element 1 includes four light emitting elements: a first light emitting element 1a, a second light emitting element 1b, a third light emitting element 1c, and a fourth light emitting element 1d. The first light emitting element 1a is mounted on the first element mounting area 11a, the second light emitting element 1b is mounted on the second element mounting area 11b, and the third light emitting element 1c is mounted on the third element mounting area 11c. The fourth light emitting element 1d is mounted on the fourth element mounting area 11d. The four light emitting elements are separated from each other via the resin portion 30 in a top view.

When the semiconductor device 100 includes a plurality of light emitting elements as the semiconductor elements 1, it is preferable that the side surfaces of the light emitting elements are not completely opposed to each other in at least one of the X direction and the Y direction. For example, in the semiconductor device 100 shown in FIG. 1A, the side surface of the first light emitting element 1a partly faces the side surface of the third light emitting element 1c, and the other part faces the third light emitting element 1c. do not have. Similarly, the side surface of the fourth light emitting element 1d partly faces the side surface of the second light emitting element 1b and the other part does not face the second light emitting element 1b. A part of the side surface of the second light emitting element 1b is opposed to the side surface of the third light emitting element 1c and the side surface of the fourth light emitting element 1d, and the other part of the side surface of the second light emitting element 1b is the third light emitting element. It faces the region between the element 1c and the fourth light emitting element 1d. A part of the side surface of the third light emitting element 1c faces the side surface of the first light emitting element 1a and the side surface of the second light emitting element 1b, and the other part of the side surface of the third light emitting element 1c is the first light emitting element. It faces the region between the element 1a and the second light emitting element 1b. By arranging a plurality of light emitting elements as described above, it is possible to reduce the rate of light emitted from the light emitting elements being absorbed by adjacent light emitting elements. Thereby, a semiconductor device with good light extraction can be obtained.

In the semiconductor device 100 shown in FIG. 1A, for example, part of the side surface of the first light emitting element 1a faces part of the side surface of the third light emitting element 1c, but the present invention is not limited to this. The light-emitting elements can be arranged so that the side surfaces of the light-emitting elements do not face each other in at least one of the X direction and the Y direction. As a result, it is possible to further reduce the rate at which the light emitted from the light emitting element is absorbed by the adjacent light emitting element.
The planar area, number, or arrangement of the semiconductor elements 1 can be appropriately set according to the application.

When semiconductor device 100 includes a plurality of semiconductor elements 1, each semiconductor element is electrically connected in series, in parallel, or in a combination of series and parallel. In the semiconductor device 100 shown in FIG. 1A, all four light emitting elements are connected in series. Accordingly, a bright semiconductor device can be obtained by applying a predetermined current.

[Resin package 10]
The resin package 10 is a base for mounting the semiconductor element 1 thereon. The resin package 10 has a resin portion 30 and first leads 51 and second leads 52 embedded in the resin portion 30 . Resin package 10 has recess 2 having an opening in upper surface 80a. The bottom surface of the recess 2 has a substantially rectangular shape with four sides when viewed from above. For example, in the resin package 10 shown in FIG. 1C, the bottom surface of the concave portion 2 is formed on the first side 21, the second side 22 opposite to the first side 21, and the first side 21 and the second side 22. It has a connecting third side 23 and a fourth side 24 opposite to the third side 23 .

The resin package 10 shown in FIGS. 1B and 1C has a substantially rectangular outer shape when viewed from above, and includes a first outer surface 81, a second outer surface 82 opposite to the first outer surface 81, and a third outer surface 82. It has a side surface 83 and a fourth outer surface 84 opposite the third outer surface 83 . Resin package 10 also has an upper surface 80a and a lower surface 80b opposite to upper surface 80a. A lower surface 80b of the resin package 10 functions as a mounting surface for mounting on a mounting substrate. The first portion 510 and the second portion 520 of the first lead 51 and the second lead 52 are exposed from the resin portion 30 on the lower surface 80 b of the resin package 10 . Thereby, heat generated by the semiconductor element 1 can be efficiently dissipated through the first lead 51 and the second lead 52 . The first portion 510 and the second portion 520 of the first lead 51 are part of the first lead 51 , and the first portion 510 and the second portion 520 are separated from each other via the resin portion 30 on the lower surface of the resin package 10 . is doing.

On the bottom surface of recess 2 , element mounting area 11 , wire connection area 12 and first area 13 are exposed from resin portion 30 , and other areas are covered with resin portion 30 . In this specification, the element mounting region 11, the wire connection region 12, and the first region 13 exposed from the resin portion 30 on the bottom surface of the recess 2 means that the element mounting region 11, the wire connection region, and the wire connection region are exposed from the top surface view. 12 and the first region 13 should be exposed from the resin portion 30 . That is, on the bottom surface of the recess 2, as shown in FIGS. 1D and 1E, the upper surface of the element mounting region 11 and the like and the resin portion 30 may be positioned substantially on the same plane. The upper surface may be positioned higher than the resin portion 30 , or the upper surface of the element mounting region 11 and the like may be positioned lower than the resin portion 30 .

The element mounting area 11 , the wire connection area 12 and the first area 13 are part of the upper surfaces of the pair of leads 5 . The element mounting area 11 is an area on which the semiconductor element 1 is mounted, and one semiconductor element 1 is mounted on one element mounting area 11 . In addition, the element mounting area 11 has substantially the same size as the semiconductor element 1 when viewed from above, and at least a part of the periphery is surrounded by the resin portion 30 . The wire connection region 12 is a region to which one end of the wire 6 connected to the electrode of the semiconductor element 1 is connected. Also, the wire connection region 12 is separated from the element mounting region 11 via the resin portion 30 and is surrounded by the resin portion 30 . The first region 13 is a region where neither the semiconductor element 1 nor the connection portion of the wire 6 is located, and at least a portion of the periphery is surrounded by the resin portion 30 . Further, the first region 13 is separated from the wire connection region 12 via the resin portion 30 in top view.

By exposing only the element mounting region 11, the wire connection region 12, and the first region 13 from the resin portion 30 on the bottom surface of the recess 2, even if oxygen, sulfur, or the like in the atmosphere enters the recess 2, , the regions of the upper surfaces of the pair of leads 5 exposed to oxygen, sulfur, etc. can be reduced. As a result, for example, when a light emitting element is used as the semiconductor element 1, the possibility of lowering the light reflectance of the resin package 10 can be suppressed. can be taken out. As the resin portion 30, it is preferable to use a member that is resistant to deterioration due to light and heat and has high light reflectivity. As such a resin portion 30, for example, an epoxy-based or silicone-based resin material containing a light-reflecting substance such as titanium oxide can be used.

In the resin package 10 shown in FIG. 1C, the bottom surface of the concave portion 2 has a first element mounting area 11a, a second element mounting area 11b, a third element mounting area 11c, a fourth element mounting area 11d, and a first wire. Connection region 12 a , second wire connection region 12 b and first region 13 are exposed from resin portion 30 . The first element mounting area 11 a , the second element mounting area 11 b , the third element mounting area 11 c , the fourth element mounting area 11 d , the first wire connection area 12 a and the first area 13 are the upper surface of the first lead 51 . , and the second wire connection region 12 b is located on the upper surface of the second lead 52 . Further, in top view, the first element mounting area 11a, the second element mounting area 11b, the third element mounting area 11c, the fourth element mounting area 11d, the first wire connection area 12a, and the second wire connection area 12b are spaced apart via the resin portion 30, respectively. In addition, when viewed from above, the first region 13 is separated from the first wire connection region 12a and the second wire connection region 12b via the resin portion 30 .

The wire connection region 12 and the first region 13 have a silver-containing layer 4 on top. Accordingly, when a light emitting element is used as the semiconductor element 1 , light emitted from the light emitting element can be efficiently reflected on the upper surfaces of the wire connection region 12 and the first region 13 . As the silver-containing layer 4, for example, a plated layer made of silver or an alloy containing silver can be used. In addition to the upper surfaces of the wire connection region 12 and the first region 13 , the silver-containing layer 4 is formed on the upper surface of the element mounting region 11 and a pair of layers other than the element mounting region 11 , the wire connection region 12 and the first region 13 . may be located on the upper surface of the lead 5 of the . Additionally, the silver-containing layer 4 may be on the side and bottom surfaces of the pair of leads 5 .

In general, ingredients such as oxygen and sulfur tend to bond with the silver-containing layer. The first region 13 suppresses concentration of oxygen, sulfur, etc. in the wire connection region 12 when oxygen, sulfur, etc. in the atmosphere enters the recess 2, and guides oxygen, sulfur, etc. to the upper surface of itself. It has a role as an area. Since the semiconductor device 100 has the first region 13 having the silver-containing layer 4 on the upper surface, concentration of oxygen, sulfur, or the like in the wire connection region 12 can be suppressed, and disconnection of the wire 6 can be effectively prevented. can be suppressed. The semiconductor device 100 may have only one first region 13 or may have two or more first regions 13 .

The shortest distance between the first region 13 and the wire connection region 12 is at least half the length of the longest side of the four sides on the bottom surface of the recess 2 when viewed from above. As a result, the wire connection region 12 and the first region 13 can be sufficiently separated from each other, and when oxygen, sulfur, or the like is positioned on the upper surface of the first region 13, the oxygen, sulfur, or other components are removed from the wire connection region. The probability of reaching 12 can be reduced. Thereby, breakage of the wire 6 can be effectively suppressed.

The first region 13 is preferably located in contact with the outer edge of the bottom surface of the recess 2 . By locating the first region 13 in the outer region of the bottom surface of the recess 2 , even if the first region 13 is deteriorated by oxygen, sulfur, or the like, the rate of light reaching the semiconductor element 1 can be reduced. As a result, a semiconductor device with good light extraction can be obtained. In FIG. 1C , the first region 13 is in contact with the fourth side 24 of the bottom surface of the recess 2 . Moreover, it is preferable that the first region 13 is continuous with at least one of the element mounting regions 11 when viewed from above. Thereby, heat generated by the semiconductor element 1 can be efficiently radiated from the first area 13 in addition to the element mounting area 11 . Further, for example, when a protective layer such as silicon oxide is formed by sputtering in the recessed portion 2 of the semiconductor device 100 , part of the first region 13 may be blocked by the side surface of the semiconductor element 1 or the like. A region where the protective layer is not formed can be intentionally formed in the part. Thereby, for example, oxygen, sulfur, or the like can be effectively introduced to the first region 13 . Note that the first region 13 and the element mounting region 11 may be separated via the resin portion 30 when viewed from above.

Next, the pair of leads 5 will be described with reference to FIGS. 2A and 2B. FIG. 2A is a schematic top view showing a pair of leads 5. FIG. In FIG. 2A, dashed line X indicates the outer edge of the bottom surface of recess 2 . A pair of leads 5 shown in FIG. 2A have upper surface depressions 7a. A portion of the resin portion 30 enters the upper surface recess portion 7a. The top surface recessed portion 7a has a region located on the bottom surface of the recessed portion 2 and a region located outside the bottom surface of the recessed portion 2 and embedded in the resin portion 30 when viewed from above. Since the pair of leads 5 has the recessed portion 7a on the upper surface, the adhesion between the resin portion 30 and the pair of leads 5 can be improved. In addition, by inserting the resin portion 30 into the recessed portion 7a on the upper surface, the area of the pair of leads 5 exposed from the resin portion 30 on the bottom surface of the recess portion 2 can be reduced.

The pair of leads 5 preferably has a main body portion and an extension portion 15 extending outwardly from a portion of the main body portion. In FIG. 2A, the extension 15 extends in the X direction or the Y direction from part of the main body. Since the pair of leads 5 has the extended portion 15 extending outward from a portion of the main body, the adhesion between the pair of leads and the resin portion 30 is improved.

FIG. 2B is a schematic bottom view showing a pair of leads 5. FIG. The pair of leads 5 has a bottom surface recessed portion 7b on the bottom surface. The hatched area in FIG. 2B is the lower recessed portion 7b. A region surrounded by a broken line inside the pair of leads 5 is an upper recess portion 7 a on the upper surface of the pair of leads 5 . A portion of the resin portion 30 enters the lower surface recessed portion 7b. Since the pair of leads 5 has the recessed portion 7b on the lower surface, the adhesion between the resin portion 30 and the pair of leads 5 can be improved. Also, the first lead 51 has a first portion 510 and a second portion 520 on the lower surface. The first portion 510 and the second portion 520 are separated via the lower surface recess portion 7b. By providing the lower surface recessed portion 7b so as to separate the lower surface of the first lead 51 into a plurality of portions, for example, the first lead 51 having a larger planar area than the second lead 52 has a higher adhesion to the resin portion 30. Further, it is possible to suppress peeling between the first lead 51 and the resin portion 30 . Also, when the shape of the first lead 51 is, for example, a shape having a narrow portion 9a and a wide portion 9b as shown in FIG. In this case, there is a possibility that the semiconductor device 100 may be rotated due to the difference in the surface tension of the bonding member in the narrow width portion 9a and the surface tension of the bonding member in the wide width portion 9b. Therefore, by providing the lower surface recessed portion 7b so as to separate the lower surface of the first lead 51 into the narrow portion 9a and the wide portion 9b, the surface tension of each portion can be applied separately. can effectively improve self-alignment. In addition, in the X direction of FIG. 2B, the width of the narrow portion 9a is narrower than the width of the wide portion 9b.

The first region 13 preferably overlaps with the lower recessed portion 7b that separates the first lead 51 into a plurality of portions when viewed from above. As a result, for example, by arranging the first region 13 above the lower surface recessed portion 7b where the lead thickness is thin, the heat dissipation of the semiconductor device 100 can be improved while the adhesion between the pair of leads 5 and the resin portion 30 is improved. can be improved.

In FIG. 2B, dashed line Y indicates the position of the outer surface of semiconductor device 100 . The first lead 51 and the second lead 52 are exposed from the resin portion 30 and are substantially flush with the resin portion 30 on the outer surface. In this manner, since the first lead 51 and the second lead 52 do not extend outward from the resin portion 30 on the outer surface, a compact semiconductor device 100 occupying a small area can be provided.

The upper surface recessed portion 7a and the lower surface recessed portion 7b are provided on the upper surface or the lower surface of the first lead 51 and the second lead 52, and are recesses that do not penetrate the first lead 51 and the second lead 52 in the depth direction. The depth of the upper recessed portion 7a is, for example, 0.1 to 0.9 times the thickness of the first lead 51 and the second lead 52, preferably 0.2 to 0.8 times. , 0.4 to 0.6 times. The depth of the recessed portion 7b on the lower surface is 0.1 to 0.9 times the thickness of the first lead 51 and the second lead 52, preferably 0.2 to 0.8 times. , 0.4 to 0.7 times. For example, when the thickness of the first lead 51 and the second lead 52 is 0.2 mm, the depth of the upper recessed portion 7a is 0.08 mm to 0.11 mm, and the depth of the lower recessed portion 7b is 0.12 mm. ~0.15 mm. The depths of the upper surface recessed portion 7a and the lower surface recessed portion 7b may be the same or different. Moreover, the depth may be different in each region in the upper surface recessed portion 7a or the lower surface recessed portion 7b. For example, the depth of the upper surface recess 7a located near one wire connection region 12 can be made deeper than the depth of the upper surface recess 7a located near one element mounting region 11 . As a result, for example, in the vicinity of one wire connection region 12, the adhesion between the resin portion 30 and the pair of leads 5 is improved, and disconnection of the wire 6 connected to the wire connection region 12 can be effectively prevented. can.

[Wire 6]
Specifically, the wire 6 can be a metal wire of metal such as gold, copper, silver, platinum, aluminum, palladium, or an alloy thereof. If the wire is an alloy wire containing gold and silver, the content of silver can be, for example, 15-20%, 45-55%, 70-90% or 95%-99%. The wire diameter of the wire can be selected as appropriate, but is preferably 5 μm or more and 50 μm or less, more preferably 10 μm or more and 40 μm or less, and even more preferably 15 μm or more and 30 μm or less.

Each member used in the semiconductor device 100 of the present invention will be described in detail below.

(resin package)
The resin package 10 is a base for arranging the light emitting element. The resin package 10 includes a pair of leads 5 and a resin portion 30 holding the pair of leads 5 . Resin package 10 has recess 2 . The outer shape of the resin package 10 when viewed from above is, for example, a square of 3.0 mm×1.4 mm, 2.5 mm×2.5 mm, 3.0 mm×3.0 mm, and 4.5 mm×4.5 mm. Note that the external shape of the resin package 10 is not limited to a quadrangle when viewed from above, and may be other shapes such as a polygon or an ellipse. Also, the depth of the recess 2 is, for example, 0.5 to 0.8 times the height of the resin package 10 . As shown in FIG. 1C, the resin package 10 can have anode marks or cathode marks M near the corners, for example, indicating the polarity of the leads.

In addition, in the resin package 10 shown in FIG. 1C, the first lead 51 and the second lead 52 do not extend outward from the resin portion 30 on the outer surface of the resin package 10. Not limited. That is, the first lead 51 and the second lead 52 may extend outward from the resin portion 30 on the outer surface of the resin package 10 . Thereby, the heat generated by the light emitting element can be efficiently radiated to the outside.

(Resin part)
The resin portion 30 can use a thermosetting resin, a thermoplastic resin, or the like as a resin material serving as a base material. Specifically, epoxy resin compositions, silicone resin compositions, modified epoxy resin compositions such as silicone-modified epoxy resins, modified silicone resin compositions such as epoxy-modified silicone resins, modified silicone resin compositions, unsaturated polyester resins, Cured products such as saturated polyester resin, polyimide resin composition, modified polyimide resin composition, polyphthalamide (PPA), polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), ABS resin, phenolic resin, acrylic resin, A resin such as PBT resin can be used. In particular, as the resin material of the resin portion 30, it is preferable to use a thermosetting resin such as an epoxy resin composition or a silicone resin composition having excellent heat resistance and light resistance.

It is preferable that the resin portion 30 contains a light-reflecting substance in the above-described base resin material. As the light-reflecting substance, it is preferable to use a member that hardly absorbs light from the light-emitting element and that has a large difference in refractive index with respect to the resin material serving as the base material. Such light-reflecting substances are, for example, titanium oxide, zinc oxide, silicon oxide, zirconium oxide, aluminum oxide, aluminum nitride and the like.

Moreover, in order to improve the contrast of the semiconductor device 100 , the resin portion 30 may contain a filler having a low light reflectance with respect to external light (sunlight in many cases) of the semiconductor device 100 . In this case, the resin portion 30 is, for example, black or a color similar thereto. As the filler, carbon such as acetylene black, activated carbon and graphite, transition metal oxides such as iron oxide, manganese dioxide, cobalt oxide and molybdenum oxide, or colored organic pigments can be used depending on the purpose.

(1st lead, 2nd lead)
The first lead 51 and the second lead 52 are conductive and function as electrodes for supplying power to the light emitting element. The base material of the first lead 51 and the second lead 52 can be metal such as copper, aluminum, gold, silver, iron, nickel, alloys thereof, phosphor bronze, iron-containing copper, or the like. These may be single layers or laminated structures (for example, clad materials). In particular, it is preferable to use copper, which is inexpensive and has high heat dissipation, as the base material. Also, the first lead 51 and the second lead 52 have the silver-containing layer 4 on their surfaces. In addition, the first lead 51 and the second lead 52 can have an intermediate layer between the base material and the silver-containing layer 4 . The intermediate layer contains, for example, aluminum, nickel, palladium, rhodium, gold, copper, or alloys thereof. The silver-containing layer 4 or the intermediate layer may be provided over the entire surface of the first lead 51 and the second lead 52, or may be provided partially. Also, for example, the silver-containing layer 4 or intermediate layer formed on the upper surface side of the lead can be thicker than the silver-containing layer 4 or intermediate layer formed on the lower surface side of the lead.

A protective layer such as silicon oxide can be provided on the outermost surface of the first lead 51 and the second lead 52 (for example, the surface of the silver-containing layer 4). By providing the protective layer on the surface of the silver-containing layer 4 , the progress of deterioration of the silver-containing layer 4 can be effectively inhibited by the protective layer when, for example, sulfur or the like enters the recesses 2 . The protective layer can be formed by a vacuum process such as sputtering, but other known methods may be used.

It is sufficient that the resin package 10 has at least the first lead 51 and the second lead 52 . The resin package 10 may have three or more leads, for example, a third lead in addition to the first lead 51 and the second lead 52 . The third lead may function as a heat radiating member, or may function as an electrode like the first lead 51 and the like.

(semiconductor element)
A light-emitting diode element or the like can be used as the semiconductor element, and a nitride semiconductor capable of emitting light in the visible range (In _x Al _y Ga _1-x-y N, 0≦x, 0≦y, x+y≦1) can be preferably used. The semiconductor device 100 shown in FIG. 1A includes four light emitting elements, but the semiconductor device of this embodiment is not limited to this. The semiconductor device 100 only needs to include at least one semiconductor element, and the number of semiconductor elements can be changed according to the purpose and application.

When the semiconductor device 100 includes a plurality of light-emitting elements, the plurality of light-emitting elements are, for example, a plurality of blue light-emitting elements that emit blue light, three light-emitting elements that emit blue light, green light, and red light, respectively, or , a combination of a light-emitting element that emits blue light and a light-emitting element that emits green light. When the semiconductor device 100 is used as a light source for a liquid crystal display device or the like, a light-emitting element that emits blue light or a combination of a light-emitting element that emits blue light and a light-emitting element that emits green light can be used. preferable. A light-emitting element that emits blue light and a light-emitting element that emits green light preferably have a half-value width of 40 nm or less, and more preferably have a half-value width of 30 nm or less. This allows blue light and green light to easily have sharp peaks. As a result, for example, when the light-emitting device is used as a light source for a liquid crystal display device, the liquid crystal display device can achieve high color reproducibility.

(sealing member)
The semiconductor device 100 can include a sealing member 40 that covers the semiconductor element 1 . The sealing member 40 can protect semiconductor elements and the like from external force, dust, moisture, and the like. The sealing member 40 preferably transmits, for example, 60% or more of the light emitted from the light emitting element, and more preferably transmits 90% or more of the light. As the base material of the sealing member 40, the resin material used for the resin portion 30 can be used. A thermosetting resin, a thermoplastic resin, or the like can be used as the resin material that serves as the base material. For example, a silicone resin, an epoxy resin, an acrylic resin, or a resin containing one or more of these can be used. The sealing member can be formed from a single layer or can be constructed from multiple layers. In addition, light scattering particles such as titanium oxide, silicon oxide, zirconium oxide, and aluminum oxide can be dispersed in the sealing member 40 .

The encapsulating member 40 may contain one or more phosphors that convert the wavelength of light emitted from the light emitting device. The phosphor may be any phosphor that is excited by the light from the light-emitting element, such as (Ca, Sr, Ba) ₅ (PO ₄ ) ₃ (Cl, Br):Eu, (Sr, Ca, Ba) ₄ Al. ₁₄ O ₂₅ : Eu, (Ca, Sr, Ba) ₈ MgSi ₄ O ₁₆ (F, Cl, Br) ₂ : Eu, (Y, Lu, Gd) ₃ (Al, Ga) ₅ O ₁₂ : Ce, (Sr , Ca) _AlSiN3 :Eu, _{3.5MgO.0.5MgF2.GeO2} :Mn, (xs)MgO.(s/ ₂ ) _{Sc2O3.yMgF2.uCaF2} .( _{1 - t} ) _GeO2 .( ^t / ₂ ) _Mt2O3 : _{zMn , Ca3Sc2Si3O12} :Ce, _CaSc2O4 :Ce, ₍ La _, Y) _3Si6N11 : _Ce , ( _Ca , Sr,Ba) _3Si6O9N4 :Eu, ₍ Ca _, Sr, _Ba ) _3Si6O12N2 : _Eu , ₍ Ba, _Sr ,Ca) _Si2O2N2 : _Eu , ₍ Ca, Sr,Ba) _2Si5N8 :Eu, ₍ Ca,Sr,Ba)S:Eu, ₍ Ba,Sr,Ca) _Ga2S4 : _Eu , K2 ₍ Si,Ti,Ge) _F6 :Mn , Si _6-z Al _z O _z N _8-z :Eu (0<z<4.2).

In particular, two phosphors, Si _6-z Al _z O _z N _8-z :Eu (0<z<4.2) and K ₂ (Si,Ti,Ge)F ₆ :Mn, are used as phosphors. It is preferable to use a combination of By combining these two types of phosphors and a blue light-emitting element, a light-emitting device with good color reproducibility can be obtained. In addition to the two phosphors Si _6-z Al _z O _z N _8-z :Eu(0<z<4.2) and K ₂ (Si,Ti,Ge)F ₆ :Mn, It is more preferable to combine (Sr, Ca)AlSiN ₃ :Eu phosphors. By combining the (Sr, Ca)AlSiN ₃ :Eu phosphor as the phosphor, for example, the afterglow of the light emitting device can be reduced.

The content of the light-scattering particles and/or phosphor is preferably, for example, approximately 10 to 150% by weight with respect to the total weight of the sealing member 40 .

REFERENCE SIGNS LIST 100 semiconductor device 10 resin package 1 semiconductor element 1a first light emitting element 1b second light emitting element 1c third light emitting element 1d fourth light emitting element 11 element mounting region 11a first element mounting region 11b second element mounting region 11c 3 element placement area 11d 4th element placement area 12 wire connection area 12a 1st wire connection area 12b 2nd wire connection area 13 1st area 15 extension 2 recess 21 1st side 22 2nd side 23 3rd side 24 4th side 30 resin portion 4 silver-containing layer 40 sealing member 5 pair of leads 51 first lead 52 second lead 510 first portion 520 second portion 6 wire 7a upper surface depression 7b lower surface depression 80a upper surface 80b lower surface 81 second First outer surface 82 Second outer surface 83 Third outer surface 84 Fourth outer surface 9a Narrow portion 9b Wide portion

Claims (5)

a semiconductor element;
a resin package comprising a pair of leads and a resin portion for holding the pair of leads, and comprising a concave portion having a bottom surface in which a portion of the upper surface of the pair of leads is exposed from the resin portion;
the semiconductor element;a pair of wires electrically connecting each of the pair of leads;
a sealing member that covers the semiconductor element, the bottom surface of the recess, and the inner side surface of the recess; A semiconductor device comprising
The bottom surface of the recess has a substantially rectangular shape with four sides when viewed from above,
On the bottom surface of the recess, the pair of leads has substantially the same size as the semiconductor element when viewed from above, and at least a part of the periphery is surrounded by the resin portion, and the semiconductor element is placed thereon. The element mounting region is separated from the element mounting region through the resin portion and surrounded by the resin portion, anda first wire connection region to which one of the pair of wires is connected and a second wire connection region to which the other of the pair of wires is connected;a first region at least partially surrounded by the resin portion;
on the bottom surface of the recess, the element mounting region;The first wire connection area, the second wire connection areaand the first region is exposed from the resin portion, and other regions are covered with the resin portion,
The first wire connection area, the second wire connection areaand the first region has a silver-containing layer on the top surface,
the first region andsaid first wire connection areais at least half the length of the longest side of the four sides on the bottom of the recess.the law of nature,
the first wire connection area is located inside the outer edge of the bottom surface of the recess;
The first region is located in contact with the outer edge of the bottom surface of the recess, semiconductor equipment. the pair of leads has an upper surface depression portion in which a portion of the resin portion is disposed in a portion of the upper surface of the pair of leads located on the bottom surface of the recess;
2. The semiconductor device according to claim 1, wherein said element mounting region and said first wire connection region are separated from each other via said resin portion disposed in said upper surface recessed portion when viewed from above. 3. The semiconductor device according to claim 1 , wherein said first region is continuous with at least one of said element mounting regions when viewed from above. the pair of leads is a first lead and a second lead;
the first lead and the second lead are exposed from the resin portion on the lower surface of the semiconductor device;
the first lead has a recessed portion on the bottom surface into which a part of the resin portion enters;
4. The semiconductor device according to claim 1, wherein said first lead is separated into a plurality of regions on the lower surface of said semiconductor device via said resin portion which enters said lower surface recessed portion. . 5. The semiconductor device according to claim 4 , wherein said first region is located above said lower surface recessed portion.

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