JP7155245B2 - Die bonding film, dicing die bonding sheet, and method for manufacturing semiconductor chip - Google Patents

Description

The present invention relates to a die bonding film, a dicing die bonding sheet, and a method for manufacturing a semiconductor chip.
This application claims priority based on Japanese Patent Application No. 2018-057007 filed in Japan on March 23, 2018, the content of which is incorporated herein.

A semiconductor chip is usually die-bonded to a circuit forming surface of a substrate with a die-bonding film attached to its back surface. After that, one or more semiconductor chips are further laminated on this semiconductor chip as necessary, wire bonding is performed, and then the whole obtained is sealed with resin to fabricate a semiconductor package. Using this semiconductor package, a desired semiconductor device is manufactured.

A semiconductor chip having a die bonding film on its back surface is produced, for example, by dividing (cutting) a semiconductor wafer having a die bonding film on its back surface together with the die bonding film. As a method of dividing a semiconductor wafer into semiconductor chips in this manner, for example, a method of dicing a semiconductor wafer together with a die bonding film using a dicing blade is widely used. In this case, the die bonding film before division (cutting) is used as a dicing die bonding sheet that is laminated and integrated with a dicing sheet used for fixing a semiconductor wafer during dicing.
After completion of dicing, the semiconductor chip having the die bonding film on its back surface (semiconductor chip with die bonding film) is separated from the dicing sheet and picked up.

On the other hand, as a die bonding film, for example, a film having an elastic modulus G at 120° C. of 30000 Pa or less has been disclosed (see Patent Document 1). According to Patent Document 1, by using this die bonding film, the generation of voids (air gaps) can be suppressed at the interface of the die bonding film on the semiconductor chip side or the interface on the substrate side.
Further, a die bonding film having a two-layer configuration of a wire embedding layer and an insulating layer laminated thereon is disclosed (see Patent Document 2). According to Patent Document 2, this die bonding film is said to be suitable for manufacturing a semiconductor package in which chips are three-dimensionally stacked.

JP 2013-77855 A JP-A-2007-53240

As described above, the semiconductor chip after dicing is separated from the dicing sheet and picked up while still having the die bonding film on its back surface, and is die-bonded to the circuit forming surface of the substrate by the die bonding film. However, if the adhesive strength (adhesive strength) between the die bonding film and the semiconductor chip is insufficient, part or all of the die bonding film will peel off from the semiconductor chip and remain on the dicing sheet during pickup. As a result, an abnormality occurs in the transfer of the die bonding film from the dicing sheet to the semiconductor chip. In this specification, such an abnormality is referred to as "improper transfer".

Such a transfer defect of the die bonding film is likely to occur particularly when a semiconductor wafer is divided into small-sized semiconductor chips by dicing using a dicing blade. This is because dicing is performed while water (sometimes referred to as "cutting water") is caused to flow through the contact portion of the dicing blade with the semiconductor wafer. As the size of the semiconductor chip obtained by dicing becomes smaller, the amount of contact with water with respect to the surface area of one semiconductor chip increases, so that the influence of water is remarkably increased. If the adhesive strength (adhesive strength) between the die bonding film and the semiconductor chip is insufficient, water tends to enter the interface between the die bonding film and the semiconductor chip. When water penetrates, the die bonding film is easily peeled off from the semiconductor chip, resulting in poor transfer as described above.

On the other hand, the die bonding film disclosed in Patent Document 1 can suppress the generation of voids (air gaps) at the interface on the semiconductor chip side, but when the size of the semiconductor chip is small, the pick-up It is not certain whether the transfer failure of the die bonding film can be suppressed at times.

Usually, in order to suppress the transfer failure of the die bonding film, it is sufficient to improve the physical properties such as increasing the adhesive strength of the die bonding film. However, the die-bonding film is used for die-bonding the semiconductor chip to the circuit forming surface of the substrate. If the physical properties of the die bonding film are improved so as to be advantageous in suppressing transfer defects, for example, the occurrence of gaps between the substrate surface and the die bonding film during die bonding can be suppressed, and the die bonding film can be used as a substrate. In some cases, the embeddability of the so-called substrate that covers the surface is lowered.

On the other hand, the die bonding film disclosed in Patent Document 2 has a two-layer structure of a wire embedding layer and an insulating layer, suggesting that it has good embedding properties in a substrate. However, it is not clear whether the insulating layer of the die bonding film can suppress transfer defects of the die bonding film during pickup when the size of the semiconductor chip is small.

The present invention provides a die bonding film that can suppress defective transfer to a semiconductor chip when picking up a semiconductor chip with a small size and can satisfactorily embed a substrate during die bonding, and this die bonding film. It is an object of the present invention to provide a dicing die-bonding sheet provided with the dicing die-bonding sheet and a method of manufacturing a semiconductor chip using this dicing die-bonding sheet.

In order to solve the above problems, the present invention includes a first layer, a second layer on the first layer, the first layer having an initial detection temperature of melt viscosity of 75 ° C. or less, The second layer has adhesiveness and energy ray curability, and has a thickness of 10 μm and a width of more than 25 mm. The second layer is used as a test piece, and the test piece is attached to a silicon mirror wafer. Then, it is cut to a width of 25 mm, the cut test piece is immersed in pure water together with the silicon mirror wafer for 2 hours, and the test piece after immersion is cured with energy rays to obtain a cured product. As a result, when a test laminate in which the cured product is attached to a silicon mirror wafer is produced, the adhesive force between the cured product having a width of 25 mm and the silicon mirror wafer is 6 N/25 mm. Provided is a die bonding film having the above features.
Further, the present invention includes a support sheet, the die bonding film is provided on the support sheet, and the first layer in the die bonding film is arranged on the support sheet side. provide a sheet.

Further, the present invention provides a laminate (1-1) in which a semiconductor wafer is attached to the second layer and a dicing sheet is attached to the first layer of the die bonding film, or the dicing die bonding sheet , a step of producing a laminate (1-2) in which a semiconductor wafer is attached to the second layer in the die bonding film, and using a dicing blade, the laminate (1-1) or the laminate (1- 2) By cutting the semiconductor wafer in the inside together with the die bonding film, a laminated body (2) including the cut first layer, the cut second layer, and the semiconductor chip is produced. and energy beam curing of the cut second layer in the laminate (2) to obtain a cured product, thereby providing the cut first layer, the cured product, and the semiconductor chip. A step of producing a laminate (3), and in the laminate (3), the semiconductor chip provided with the cut first layer and the cured product is separated from the dicing sheet or the support sheet and picked up. and a method for manufacturing a semiconductor chip.

That is, the present invention includes the following aspects.
[1] including a first layer and a second layer provided on the first layer,
The first layer has a characteristic that the initial detection temperature of the melt viscosity is 75 ° C. or less,
The second layer has adhesiveness and energy ray curability, and has a thickness of 10 μm and a width of more than 25 mm. The second layer is used as a test piece, and the test piece is attached to a silicon mirror wafer. Then, the test piece is cut to have a width of 25 mm, the cut test piece is immersed in pure water for 2 hours together with the silicon mirror wafer, and the test piece after immersion is cured with energy rays. By using a cured product, when a test laminate in which the cured product is attached to the silicon mirror wafer is produced, the adhesive force between the cured product having a width of 25 mm and the silicon mirror wafer is , having characteristics of 6 N / 25 mm or more,
die bonding film.
[2] including a support sheet and the die bonding film according to [1] provided on the support sheet,
A dicing die bonding sheet, wherein the first layer in the die bonding film is arranged on the support sheet side.
[3] Among the die bonding films according to [1], a laminate (1-1) in which a semiconductor wafer is attached to the second layer and a dicing sheet is attached to the first layer, or [2] Of the dicing die bonding sheets according to 1, producing a laminate (1-2) in which a semiconductor wafer is attached to the second layer in the die bonding film;
By cutting the semiconductor wafer in the laminate (1-1) or the laminate (1-2) together with the die bonding film with a dicing blade, the cut first layer, the cut cut producing a laminate (2) comprising a second layer and a semiconductor chip which is the cut semiconductor wafer;
A laminated body ( 3) making
In the laminate (3), the semiconductor chip having the cut first layer and the cured product is separated from the support sheet or the dicing sheet and picked up;
A method of manufacturing a semiconductor chip, comprising:

According to the present invention, a die bonding film capable of suppressing defective transfer to a semiconductor chip when picking up a semiconductor chip having a small size and capable of satisfactorily embedding a substrate during die bonding, and the die bonding. A dicing die bonding sheet provided with a film and a method of manufacturing a semiconductor chip using this dicing die bonding sheet are provided.

1 is a cross-sectional view schematically showing a die bonding film according to one embodiment of the present invention; FIG. 1 is a cross-sectional view schematically showing a dicing die bonding sheet according to one embodiment of the present invention; FIG. 1 is a cross-sectional view schematically showing a dicing die bonding sheet according to one embodiment of the present invention; FIG. 1 is a cross-sectional view schematically showing a dicing die bonding sheet according to one embodiment of the present invention; FIG. 1 is a cross-sectional view schematically showing a dicing die bonding sheet according to one embodiment of the present invention; FIG. 1A to 1C are cross-sectional views for schematically explaining a method for manufacturing a semiconductor chip according to an embodiment of the present invention; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view schematically showing an example of a state in which a semiconductor chip with a cured die bonding film obtained by the present invention is die-bonded to a circuit forming surface of a substrate;

◇ Die bonding film A die bonding film according to one embodiment of the present invention includes a first layer and a second layer provided on the first layer, and the first layer is the initial detection temperature of melt viscosity ( In this specification, it may be abbreviated as “T ₀ ”) is 75 ° C. or less, the second layer has adhesiveness and energy ray curability, and has a thickness of 10 μm The second layer having a width of more than 25 mm is used as a test piece, the test piece is attached to a silicon mirror wafer, the test piece is cut so that the width is 25 mm, and the cut test piece is used as the A test laminate in which the cured product is attached to the silicon mirror wafer by immersing the silicon mirror wafer in pure water for 2 hours and curing the test piece after immersion with energy rays to obtain a cured product. was produced, the adhesive force between the cured product with a width of 25 mm and the silicon mirror wafer (in this specification, sometimes abbreviated as “adhesive force after immersion”) was 6 N / 25 mm It has the above characteristics.
The present invention includes a die bonding film having a second layer formed of the same material as that of the second layer having the above properties.

In the die bonding film, the first layer is used for die bonding to the substrate.
On the other hand, the second layer is attached to the semiconductor wafer, cured by irradiation with energy rays, and then picked up together with the semiconductor chip. The surface of the semiconductor wafer to which the second layer is attached is the surface opposite to the side of the semiconductor wafer on which the circuits are formed (in this specification, it may be referred to as the "back surface").

As used herein, the term "energy ray" means an electromagnetic wave or charged particle beam that has an energy quantum, and examples thereof include ultraviolet rays, radiation, electron beams, and the like.
Ultraviolet rays can be applied by using, for example, a high-pressure mercury lamp, a fusion lamp, a xenon lamp, a black light, an LED lamp, or the like as an ultraviolet light source. The electron beam can be generated by an electron beam accelerator or the like.
As used herein, "energy ray-curable" means the property of curing by irradiation with energy rays, and "non-energy ray-curable" means the property of not curing even when irradiated with energy rays. do.

In the die bonding film, the first layer has adhesiveness. Further, since the initial detection temperature (T ₀ ) of the melt viscosity of the first layer is 75° C. or less, the occurrence of a gap between the substrate surface and the first layer is suppressed during die bonding, and the One layer covers the substrate surface well and the first layer can embed the substrate well.

On the other hand, in the die bonding film, the second layer has adhesiveness and energy ray curability. Then, when the adhesive strength (adhesive strength after immersion) measured using the test piece of the second layer is 6 N / 25 mm or more, when picking up a semiconductor chip with a small size, the cured product of the second layer part or all of the second layer does not peel off from the semiconductor chip, the cured product of the second layer can suppress poor transfer to the semiconductor chip, and has good transferability.

The first layer and the second layer can stably maintain their lamination structure regardless of whether the second layer is cured with energy rays.
Therefore, the die bonding film has both good transferability to a small-sized semiconductor chip and good embedding property in a substrate.

In the present specification, when the first layer is not laminated with other layers but exists alone, such a first layer may be referred to as a "first film".
Similarly, when the second layer is not laminated with other layers but exists alone, such a second layer may be referred to as a "second film".

◎ 1st layer (1st film)
The said 1st layer (1st film) has adhesiveness as above-mentioned.
The first layer may further have curable properties (may be curable) or may not have curable properties (may be non-curable), and may have curable properties. In that case, for example, it may have both thermosetting and energy ray-curing properties, or may have both thermosetting and energy ray-curing properties.

Both the non-curing first layer and the uncured first layer having curability can be attached by lightly pressing to various adherends.
Moreover, the first layer may be one that can be applied to various adherends by heating to soften it, regardless of whether or not it is cured.
Both the non-curable first layer and the cured first layer having curable properties can maintain sufficient adhesive properties even under severe conditions of high temperature and high humidity.

_T0 of the first layer is 75°C or lower, preferably 73°C or lower, more preferably 71°C or lower, and even more preferably 69°C or lower, for example, 66°C or lower and 62°C or lower. °C or less. As another aspect, T ₀ of the first layer may be 68° C. or lower, or 59° C. or lower.
When T ₀ is equal to or less than the upper limit, the embeddability of the substrate of the first layer becomes higher.

The lower limit of _T0 of the first layer is not particularly limited.
The T ₀ of the first layer is preferably 50° C. or higher from the viewpoint of improving the handleability of the die bonding film including the first layer.

_T0 of the first layer can be appropriately adjusted within a range set by arbitrarily combining the preferred lower and upper limits described above. For example, T ₀ is preferably 50 to 75°C, more preferably 50 to 73°C, even more preferably 50 to 71°C, particularly preferably 50 to 69°C, for example 50 to 66°C and 50 to 62°C. °C. As another aspect, T ₀ may be 50 to 68°C, and may be 50 to 59°C or less.
However, these are examples of T ₀ of the first layer.

In this embodiment, _T0 of the first layer can be measured, for example, by the following method.
That is, using a capillary rheometer, the first film to be measured (the first layer existing alone) is set as a cylindrical test piece with a diameter of 10 mm and a height of 20 mm, for example, in the cylinder (capillary). Then, a piston movable along the inner wall of the cylinder in the longitudinal direction of the cylinder (in other words, the direction of the central axis) while contacting the inner wall of the cylinder is used to move the first film (the test piece) in the cylinder. The first film (the test piece) is heated (for example, at a heating rate of 10 ° C./min The temperature is raised from 50° C. to 120° C.), and a hole (for example, a diameter of 0.5° C.) provided at the tip of the cylinder (tip in the direction in which force is applied to the first film (said test piece)). When the extrusion of the first film (the test piece) to the outside of the cylinder is started from the hole of 5 mm and 1.0 mm in height), that is, the detection of the melt viscosity of the first film (the test piece) is started. The _temperature of the first film (the test piece) when the can be appropriately adjusted in consideration of the size of the cylinder.

In this specification, the term "melt viscosity" means the melt viscosity measured by the method described above, unless otherwise specified.

The first layer may consist of one layer (single layer), or may consist of a plurality of layers of two or more layers. The combination of multiple layers is not particularly limited.

In this specification, not only the case of the first layer, but also the phrase “multiple layers may be the same or different” means “all layers may be the same, or all layers may be It may be different, and only a part of the layers may be the same", and further, "a plurality of layers are different from each other" means that "at least one of the constituent material and thickness of each layer is different from each other". means that

Although the thickness of the first layer is not particularly limited, it is preferably 1 to 40 μm, more preferably 3 to 30 μm, and particularly preferably 5 to 20 μm. When the thickness of the first layer is equal to or more than the lower limit, the embedding property of the substrate of the first layer is further enhanced. Since the thickness of the first layer is equal to or less than the upper limit, the first layer (die bonding film) can be cut more easily in the semiconductor chip manufacturing process described later, and cut pieces derived from the first layer can be further reduced.
Here, the "thickness of the first layer" means the thickness of the entire first layer. means the thickness of

The first layer (first film) can be formed from the first adhesive composition containing its constituent materials. For example, the first layer can be formed on the target site by applying the first adhesive composition to the surface to be formed of the first layer and drying it as necessary.
The content ratio of the components that do not vaporize at room temperature in the first adhesive composition is usually the same as the content ratio of the components in the first layer. In this specification, the term "ordinary temperature" means a temperature at which no particular cooling or heating is applied, that is, a normal temperature.

Coating of the first adhesive composition may be performed by a known method, for example, air knife coater, blade coater, bar coater, gravure coater, roll coater, roll knife coater, curtain coater, die coater, knife coater, A method using various coaters such as a screen coater, a Meyer bar coater, and a kiss coater can be used.

Drying conditions for the first adhesive composition are not particularly limited, but when the first adhesive composition contains a solvent to be described later, it is preferable to dry by heating. The solvent-containing first adhesive composition is preferably dried, for example, at 70 to 130° C. for 10 seconds to 5 minutes.
Next, the first adhesive composition will be described in detail.

<<First Adhesive Composition>>
The type of the first adhesive composition is whether or not the first layer is curable, and if the first layer is curable, whether it is thermosetting or energy ray curable. can be selected according to the characteristics of
Preferred first adhesive compositions include thermosetting first adhesive compositions.
Examples of the thermosetting first adhesive composition include those containing a polymer component (a) and an epoxy thermosetting resin (b). Each component will be described below.

(Polymer component (a))
The polymer component (a) is a component that can be considered to be formed by a polymerization reaction of a polymerizable compound, and imparts film-forming properties, flexibility, etc. to the first layer, and adhesion to an object to be adhered such as a semiconductor chip. It is a polymer compound for improving the adhesiveness (adherability). In addition, the polymer component (a) is also a component that does not correspond to the epoxy resin (b1) and heat curing agent (b2) described below. That is, the polymer component (a) excludes components corresponding to the epoxy resin (b1) and heat curing agent (b2) described below.

The polymer component (a) contained in the first adhesive composition and the first layer may be of one type or two or more types. can.

Examples of the polymer component (a) include acrylic resins, polyesters, urethane resins, acrylic urethane resins, silicone resins, rubber resins, phenoxy resins, thermosetting polyimides, etc. Acrylic resins are preferred. .

Examples of the acrylic resin in the polymer component (a) include known acrylic polymers.
The weight average molecular weight (Mw) of the acrylic resin is preferably from 10,000 to 2,000,000, more preferably from 100,000 to 1,500,000. When the weight-average molecular weight of the acrylic resin is within such a range, it becomes easy to adjust the adhesive force between the first layer and the adherend within a preferable range.
On the other hand, when the weight average molecular weight of the acrylic resin is at least the lower limit, the shape stability (stability over time during storage) of the first layer is improved. Further, when the weight-average molecular weight of the acrylic resin is equal to or less than the upper limit, the embedding property of the substrate of the first layer becomes higher.
In addition, in this specification, the "weight average molecular weight" is a polystyrene conversion value measured by a gel permeation chromatography (GPC) method, unless otherwise specified.

The glass transition temperature (Tg) of the acrylic resin is preferably -60 to 70°C, more preferably -30 to 50°C. When the Tg of the acrylic resin is equal to or higher than the lower limit, the adhesive force between the first layer and a support sheet or a dicing sheet described later is suppressed, and the semiconductor having the first layer is produced during pickup. It becomes easier to separate the chip from a support sheet or a dicing sheet, which will be described later. When the Tg of the acrylic resin is equal to or less than the upper limit, the adhesive strength between the first layer and the second layer is improved.

Examples of the (meth)acrylic acid esters constituting the acrylic resin include methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, isopropyl (meth)acrylate, (meth)acrylate, ) n-butyl acrylate, isobutyl (meth)acrylate, sec-butyl (meth)acrylate, tert-butyl (meth)acrylate, pentyl (meth)acrylate, hexyl (meth)acrylate, (meth)acrylic heptyl acid, 2-ethylhexyl (meth)acrylate, isooctyl (meth)acrylate, n-octyl (meth)acrylate, n-nonyl (meth)acrylate, isononyl (meth)acrylate, decyl (meth)acrylate , undecyl (meth)acrylate, dodecyl (meth)acrylate (also referred to as lauryl (meth)acrylate), tridecyl (meth)acrylate, tetradecyl (meth)acrylate (also referred to as myristyl (meth)acrylate), ( Alkyl such as pentadecyl methacrylate, hexadecyl (meth)acrylate (also referred to as palmityl (meth)acrylate), heptadecyl (meth)acrylate, and octadecyl (meth)acrylate (also referred to as stearyl (meth)acrylate) A (meth)acrylic acid alkyl ester in which the alkyl group constituting the ester is a chain structure having 1 to 18 carbon atoms;
Cycloalkyl (meth)acrylates such as isobornyl (meth)acrylate and dicyclopentanyl (meth)acrylate;
(meth)acrylic acid aralkyl ester such as benzyl (meth)acrylate;
(meth)acrylic acid cycloalkenyl esters such as (meth)acrylic acid dicyclopentenyl ester;
(meth)acrylic acid cycloalkenyloxyalkyl ester such as (meth)acrylic acid dicyclopentenyloxyethyl ester;
(meth)acrylic acid imide;
glycidyl group-containing (meth)acrylic acid esters such as glycidyl (meth)acrylate;
Hydroxymethyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, (meth) ) hydroxyl group-containing (meth)acrylic acid esters such as 3-hydroxybutyl acrylate and 4-hydroxybutyl (meth)acrylate;
Examples thereof include substituted amino group-containing (meth)acrylic acid esters such as N-methylaminoethyl (meth)acrylate. Here, "substituted amino group" means a group in which one or two hydrogen atoms of an amino group are substituted with groups other than hydrogen atoms.

In this specification, "(meth)acrylic acid" is a concept that includes both "acrylic acid" and "methacrylic acid". The same is true for (meth)acrylic acid and similar terms.

The acrylic resin is, for example, one or more monomers selected from (meth)acrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene, N-methylolacrylamide, etc., in addition to the (meth)acrylic acid ester. may be copolymerized.

Monomers constituting the acrylic resin may be of one type or two or more types, and in the case of two or more types, the combination and ratio thereof can be arbitrarily selected.
As one aspect, the acrylic resin is an acrylic resin obtained by copolymerizing n-butyl acrylate, methyl acrylate, glycidyl methacrylate and 2-hydroxyethyl acrylate, or n-butyl acrylate, acrylic An acrylic resin obtained by copolymerizing ethyl acetate, acrylonitrile and glycidyl methacrylate is preferred.

The acrylic resin may have functional groups capable of bonding with other compounds, such as vinyl groups, (meth)acryloyl groups, amino groups, carboxy groups, and isocyanate groups, in addition to the hydroxyl groups described above. These functional groups including the hydroxyl group of the acrylic resin may be bonded to other compounds via a cross-linking agent (f), which will be described later, or directly bonded to other compounds without the cross-linking agent (f). You may have The reliability of the package obtained by using the first layer tends to be improved by bonding the acrylic resin to the other compound through the functional group.

In the present invention, as the polymer component (a), a thermoplastic resin other than an acrylic resin (hereinafter sometimes simply referred to as "thermoplastic resin") is used alone without using an acrylic resin. Alternatively, it may be used in combination with an acrylic resin. By using the thermoplastic resin, it becomes easier to separate the semiconductor chip provided with the first layer from a support sheet or a dicing sheet to be described later during pickup, and the embedding of the substrate of the first layer is improved. It may get higher.

The weight average molecular weight of the thermoplastic resin is preferably 1,000 to 100,000, more preferably 3,000 to 80,000.

The glass transition temperature (Tg) of the thermoplastic resin is preferably -30 to 150°C, more preferably -20 to 120°C.

Examples of the thermoplastic resin include polyester, polyurethane, phenoxy resin, polybutene, polybutadiene, polystyrene and the like.

The thermoplastic resins contained in the first adhesive composition and the first layer may be of one type or two or more types, and when there are two or more types, the combination and ratio thereof can be arbitrarily selected.

In the first adhesive composition, the ratio of the content of the polymer component (a) to the total content (total mass) of all components other than the solvent (that is, the content of the polymer component (a) in the first layer ) is preferably 5 to 20% by mass, more preferably 6 to 16% by mass, and may be 7 to 12% by mass, regardless of the type of polymer component (a).

In the first adhesive composition and the first layer, the ratio of the content of the acrylic resin to the total content (total mass) of the polymer component (a) is preferably 80 to 100% by mass. It is more preferably up to 100% by mass, more preferably 90 to 100% by mass, and may be, for example, 95 to 100% by mass.

(Epoxy thermosetting resin (b))
The epoxy thermosetting resin (b) consists of an epoxy resin (b1) and a thermosetting agent (b2).
The epoxy thermosetting resin (b) contained in the first adhesive composition and the first layer may be of only one type, or may be of two or more types. Can be selected arbitrarily.

・Epoxy resin (b1)
Examples of the epoxy resin (b1) include known ones, such as polyfunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and hydrogenated products thereof, ortho-cresol novolak epoxy resins, dicyclopentadiene type epoxy resins, Biphenyl-type epoxy resins, bisphenol A-type epoxy resins, bisphenol F-type epoxy resins, phenylene skeleton-type epoxy resins, and other epoxy compounds having a functionality of two or more can be used.

As the epoxy resin (b1), an epoxy resin having an unsaturated hydrocarbon group may be used. Epoxy resins having unsaturated hydrocarbon groups have higher compatibility with acrylic resins than epoxy resins having no unsaturated hydrocarbon groups. Therefore, by using an epoxy resin having an unsaturated hydrocarbon group, the reliability of the package obtained using the first layer is improved.

The epoxy resin having an unsaturated hydrocarbon group includes, for example, a compound obtained by converting a part of the epoxy groups of a polyfunctional epoxy resin into a group having an unsaturated hydrocarbon group. Such a compound can be obtained, for example, by addition reaction of (meth)acrylic acid or a derivative thereof to an epoxy group. As used herein, unless otherwise specified, the term "derivative" means a compound obtained by substituting at least one group of the original compound with another group (substituent). Here, the term "group" includes not only an atomic group formed by bonding a plurality of atoms, but also a single atom.

Examples of the epoxy resin having an unsaturated hydrocarbon group include compounds in which a group having an unsaturated hydrocarbon group is directly bonded to an aromatic ring or the like that constitutes the epoxy resin.
The unsaturated hydrocarbon group is a polymerizable unsaturated group, and specific examples thereof include an ethenyl group (also referred to as a vinyl group), a 2-propenyl group (also referred to as an allyl group), and a (meth)acryloyl group. , (meth)acrylamide group and the like, and acryloyl group is preferred.

Although the number average molecular weight of the epoxy resin (b1) is not particularly limited, it is preferably 300 to 30000, preferably 400 to It is more preferably 10,000, and particularly preferably 500 to 3,000.

As used herein, the number average molecular weight is a polystyrene-equivalent value measured by a gel permeation chromatography (GPC) method, unless otherwise specified.

The epoxy equivalent of the epoxy resin (b1) is preferably 100-1000 g/eq, more preferably 150-800 g/eq.
As used herein, "epoxy equivalent" means the number of grams (g/eq) of an epoxy compound containing one equivalent of an epoxy group, and can be measured according to the method of JIS K 7236:2001.

The epoxy resin (b1) contained in the first adhesive composition and the first layer may be of only one type, or may be of two or more types, and when there are two or more types, the combination and ratio thereof may be arbitrarily selected. .
As one aspect, the epoxy resin (b1) is selected from the group consisting of bisphenol A type epoxy resins, polyfunctional aromatic type (triphenylene type) epoxy resins, bisphenol F type epoxy resins and dicyclopentadiene type epoxy resins. At least one is preferred.

・Heat curing agent (b2)
The thermosetting agent (b2) functions as a curing agent for the epoxy resin (b1).
Examples of the thermosetting agent (b2) include compounds having two or more functional groups capable of reacting with epoxy groups in one molecule. Examples of the functional group include a phenolic hydroxyl group, an alcoholic hydroxyl group, an amino group, a carboxyl group, and an anhydrided group of an acid group. is preferably a group, more preferably a phenolic hydroxyl group or an amino group.

Among thermosetting agents (b2), phenol-based curing agents having phenolic hydroxyl groups include, for example, polyfunctional phenolic resins, biphenols, novolac-type phenolic resins, dicyclopentadiene-type phenolic resins, aralkyl-type phenolic resins, and the like. .
Among the thermosetting agents (b2), amine-based curing agents having an amino group include, for example, dicyandiamide (sometimes abbreviated as DICY).

The thermosetting agent (b2) may have an unsaturated hydrocarbon group.
Examples of the thermosetting agent (b2) having an unsaturated hydrocarbon group include, for example, a compound obtained by substituting a portion of the hydroxyl groups of a phenol resin with a group having an unsaturated hydrocarbon group; Examples thereof include compounds in which a group having a saturated hydrocarbon group is directly bonded.
The unsaturated hydrocarbon group in the thermosetting agent (b2) is the same as the unsaturated hydrocarbon group in the above epoxy resin having an unsaturated hydrocarbon group.

When using a phenol-based curing agent as the thermosetting agent (b2), the thermosetting agent (b2) should have a high softening point or glass transition temperature because it facilitates adjustment of the adhesive strength of the die bonding film. is preferred.

Of the thermosetting agent (b2), the number average molecular weight of resin components such as polyfunctional phenolic resins, novolac-type phenolic resins, dicyclopentadiene-type phenolic resins, and aralkyl-type phenolic resins is preferably 300 to 30,000. , 400 to 10,000, and particularly preferably 500 to 3,000.
Among the thermosetting agent (b2), the molecular weight of non-resin components such as biphenol and dicyandiamide is not particularly limited, but is preferably 60 to 500, for example.

The first adhesive composition and the thermosetting agent (b2) contained in the first layer may be of only one type, or may be of two or more types. can.

Among the thermosetting agents (b2), the phenolic resin includes, for example, an alkyl group or the like for the carbon atom adjacent to the carbon atom to which the phenolic hydroxyl group is bonded (the carbon atom constituting the benzene ring skeleton). (In the present specification, it may be abbreviated as "sterically hindered phenolic resin") having steric hindrance in the vicinity of the phenolic hydroxyl group to which the substituent of is bound. Examples of such sterically hindered phenolic resins include o-cresol type novolac resins.

In the first adhesive composition and the first layer, the content of the thermosetting agent (b2) is preferably 10 to 200 parts by mass with respect to 100 parts by mass of the epoxy resin (b1). It is more preferably up to 160 parts by mass, even more preferably 20 to 120 parts by mass, and particularly preferably 25 to 80 parts by mass. When the content of the thermosetting agent (b2) is at least the lower limit, curing of the first layer proceeds more easily. When the content of the thermosetting agent (b2) is equal to or less than the upper limit, the moisture absorption rate of the first layer is reduced, and the reliability of the package obtained using the first layer is further improved.

In the first adhesive composition and the first layer, the content of the epoxy thermosetting resin (b) (the total content of the epoxy resin (b1) and the thermosetting agent (b2)) is the polymer component (a) With respect to the content of 100 parts by mass, it is preferably 400 to 1200 parts by mass, more preferably 500 to 1100 parts by mass, and even more preferably 600 to 1000 parts by mass. parts by mass, and 800 to 1000 parts by mass. When the content of the epoxy thermosetting resin (b) is within such a range, it is easier to adjust the adhesion between the first layer and the support sheet or dicing sheet described below. Become.

When the sterically hindered phenolic resin is used, the ratio of the content of the sterically hindered phenolic resin to the total content (total mass) of the thermosetting agent (b2) in the first adhesive composition and the first layer is , for example, 80 to 100% by mass, 85 to 100% by mass, 90 to 100% by mass, and 95 to 100% by mass.
Then, in the first adhesive composition and the first layer, the ratio of the content of the o-cresol type novolac resin to the total content (total mass) of the thermosetting agent (b2) is 80 to 100% by mass, 85 100% by mass, 90 to 100% by mass, and 95 to 100% by mass.

In order to improve the various physical properties of the first layer, in addition to the polymer component (a) and the epoxy-based thermosetting resin (b), it further contains other components that do not correspond to these, if necessary. may
Other components contained in the first layer include, for example, curing accelerator (c), filler (d), coupling agent (e), cross-linking agent (f), energy ray-curable resin (g), light Polymerization initiator (h), general-purpose additive (i), and the like can be mentioned. Among these, preferred other components include curing accelerator (c), filler (d), coupling agent (e), and general-purpose additive (i).

(Curing accelerator (c))
The curing accelerator (c) is a component for adjusting the curing speed of the first adhesive composition.
Preferred curing accelerators (c) include, for example, tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, tris(dimethylaminomethyl)phenol; 2-methylimidazole, 2-phenylimidazole. , 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole (at least one hydrogen atom is other than a hydrogen atom) imidazole substituted with a group); organic phosphines such as tributylphosphine, diphenylphosphine, triphenylphosphine (phosphines in which at least one hydrogen atom is substituted with an organic group); tetraphenylphosphonium tetraphenylborate, triphenylphosphine tetraphenylboron salts such as tetraphenylborate; clathrate compounds using the imidazole as a guest compound; and the like.

The curing accelerator (c) contained in the first adhesive composition and the first layer may be of only one type, or may be of two or more types, and when there are two or more types, the combination and ratio thereof may be arbitrarily selected. can.

When the curing accelerator (c) is used, the content of the curing accelerator (c) in the first adhesive composition and the first layer is based on the content of the epoxy thermosetting resin (b) of 100 parts by mass. It is preferably 0.01 to 5 parts by mass, more preferably 0.1 to 2 parts by mass. When the content of the curing accelerator (c) is at least the lower limit, the effect of using the curing accelerator (c) can be obtained more remarkably. When the content of the curing accelerator (c) is equal to or less than the above upper limit, for example, the highly polar curing accelerator (c) can adhere to the adherend in the first layer under high temperature and high humidity conditions. The effect of suppressing migration to the interface side and segregation is increased, and the reliability of the package obtained using the first layer is further improved.

Among the above, in the inclusion compound using the imidazole as a guest compound, the imidazole as an active ingredient is included in the host compound. Therefore, it is presumed that the reaction site of the imidazole is not exposed or the degree of exposure is suppressed except during the reaction. As a result, when the clathrate compound is used as the curing accelerator (c), the unintended reaction of the curing accelerator (c) is suppressed during storage of the first layer, whereby the first layer It is speculated that the storage stability of is higher.

Examples of the clathrate compound include those having an imidazole as a guest compound and a carboxylic acid as a host compound.

The carboxylic acid that is the host compound is preferably an aromatic carboxylic acid.
The aromatic carboxylic acid may be either a monocyclic aromatic carboxylic acid or a polycyclic aromatic carboxylic acid.
The aromatic carboxylic acid includes a carboxylic acid having only an aromatic hydrocarbon ring as a ring skeleton, a carboxylic acid having only an aromatic heterocyclic ring as a ring skeleton, and an aromatic hydrocarbon ring and an aromatic heterocyclic ring as a ring skeleton. It may be any carboxylic acid that has both.

The aromatic carboxylic acid is preferably an aromatic hydroxycarboxylic acid.
The aromatic hydroxycarboxylic acid is not particularly limited as long as it is an aromatic carboxylic acid having both a hydroxyl group and a carboxyl group in one molecule. Acids are preferred.

Preferred inclusion compounds include, for example, the imidazoles being 2-phenyl-4-methyl-5-hydroxymethylimidazole (herein sometimes abbreviated as "2P4MHZ"), Examples include inclusion compounds in which the carboxylic acid is 5-hydroxyisophthalic acid (in this specification, sometimes abbreviated as “HIPA”), and one molecule is composed of two molecules of 2P4MHZ and one molecule of HIPA. More preferably, it is a structured clathrate.

When the clathrate compound is used, the ratio of the content of the clathrate compound to the total content (total mass) of the curing accelerator (c) in the first adhesive composition and the first layer is 80 to 100. % by mass, 85 to 100% by mass, 90 to 100% by mass, and 95 to 100% by mass.
Then, in the first adhesive composition and the first layer, the ratio of the content of the clathrate compound composed of 2P4MHZ and HIPA to the total content (total mass) of the curing accelerator (c) is 80 to 100% by mass, 85 to 100% by mass, 90 to 100% by mass, and 95 to 100% by mass.

(Filler (d))
By containing the filler (d), the first layer can easily adjust its coefficient of thermal expansion. The reliability of the package obtained by using is further improved. In addition, by including the filler (d) in the first layer, the moisture absorption rate of the cured first layer can be reduced and the heat dissipation can be improved.

The filler (d) may be either an organic filler or an inorganic filler, but is preferably an inorganic filler.
Preferable inorganic fillers include, for example, powders of silica, alumina, talc, calcium carbonate, titanium white, iron oxide, silicon carbide, boron nitride; beads obtained by spheroidizing these inorganic fillers; and surface modification of these inorganic fillers. products; single crystal fibers of these inorganic fillers; glass fibers and the like.
Among these, the inorganic filler is preferably silica or alumina.

The average particle size of the filler (d) is not particularly limited, but is preferably 1 to 1000 nm, more preferably 5 to 800 nm, even more preferably 10 to 600 nm, for example 10 to 400 nm. , and 10 to 200 nm. As another aspect, the filler (d) may have an average particle size of 50 to 500 nm. When the average particle size of the filler (d) is in such a range, it becomes easier to adjust the coefficient of thermal expansion, moisture absorption rate and heat dissipation.
In the present specification, the "average particle size" means the value of the particle size ( _D50 ) at an integrated value of 50% in a particle size distribution curve obtained by a laser diffraction scattering method, unless otherwise specified. .

The first adhesive composition and the filler (d) contained in the first layer may be of only one type, or may be of two or more types, and when there are two or more types, the combination and ratio thereof can be arbitrarily selected. .

When using the filler (d), in the first adhesive composition, the ratio of the content of the filler (d) to the total content (total mass) of all components other than the solvent (i.e., filling of the first layer The content of material (d)) is preferably 5 to 40% by mass, more preferably 10 to 35% by mass, and particularly preferably 15 to 30% by mass. When the content of the filler (d) is within such a range, it becomes easier to adjust the coefficient of thermal expansion, moisture absorption rate, and heat dissipation.

When using a filler (d) having an average particle diameter of 1 to 1000 nm, the average particle diameter is 1 with respect to the total content (total mass) of the filler (d) in the first adhesive composition and the first layer. The content ratio of the filler (d) having a diameter of up to 1000 nm is preferably 80 to 100% by mass, more preferably 85 to 100% by mass, even more preferably 90 to 100% by mass. , for example, 95 to 100% by mass.

(Coupling agent (e))
By containing the coupling agent (e), the first layer improves adhesion and adhesion to the adherend. In addition, since the first layer contains the coupling agent (e), the cured product has improved water resistance without impairing heat resistance. Coupling agent (e) has a functional group capable of reacting with an inorganic compound or an organic compound.

The coupling agent (e) is preferably a compound having a functional group capable of reacting with the functional group of the polymer component (a), the epoxy thermosetting resin (b), etc., and is a silane coupling agent. is more preferable.
Preferred silane coupling agents include, for example, 3-glycidyloxypropyltrimethoxysilane, 3-glycidyloxypropylmethyldiethoxysilane, 3-glycidyloxypropyltriethoxysilane, 3-glycidyloxymethyldiethoxysilane, 2- (3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-methacryloyloxypropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-(2-aminoethylamino)propyltrimethoxysilane, 3-(2-amino ethylamino)propylmethyldiethoxysilane, 3-(phenylamino)propyltrimethoxysilane, 3-anilinopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-mercaptopropylmethyl dimethoxysilane, bis(3-triethoxysilylpropyl)tetrasulfane, methyltrimethoxysilane, methyltriethoxysilane, vinyltrimethoxysilane, vinyltriacetoxysilane, imidazolesilane, oligomeric or polymeric organosiloxane, and the like. .
The oligomeric or polymeric organosiloxane is an organosiloxane having an oligomeric or polymeric structure that can be regarded as being formed by a polymerization reaction of a polymerizable compound.

The first adhesive composition and the coupling agent (e) contained in the first layer may be of only one type, or may be of two or more types. can.
As one aspect, the coupling agent (e) includes 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyltriethoxysilane, and an oligomeric silane coupling agent having an epoxy group, a methyl group and a methoxy group. At least one selected from the group consisting of ring agents is preferred.

When the coupling agent (e) is used, the content of the coupling agent (e) in the first adhesive composition and the first layer is the amount of the polymer component (a) and the epoxy thermosetting resin (b). With respect to the total content of 100 parts by mass, it is preferably 0.03 to 20 parts by mass, more preferably 0.05 to 10 parts by mass, and particularly preferably 0.1 to 5 parts by mass. . When the content of the coupling agent (e) is at least the lower limit value, the dispersibility of the filler (d) in the resin is improved, the adhesion of the first layer to the adherend is improved, etc. The effects of using the coupling agent (e) are more remarkably obtained. When the content of the coupling agent (e) is equal to or less than the upper limit, outgassing is further suppressed.

When the oligomeric or polymeric organosiloxane is used, the content of the oligomeric or polymeric organosiloxane relative to the total content (total mass) of the coupling agent (e) in the first adhesive composition and the first layer The proportion of amounts may be anywhere from 25 to 100% by weight and from 40 to 100% by weight.

(Crosslinking agent (f))
As the polymer component (a), those having functional groups such as vinyl groups, (meth)acryloyl groups, amino groups, hydroxyl groups, carboxy groups, isocyanate groups, etc., which are capable of bonding with other compounds, such as the acrylic resins described above. When used, the first adhesive composition and first layer may contain a cross-linking agent (f) for linking and cross-linking said functional groups with other compounds. By cross-linking using the cross-linking agent (f), the initial adhesive strength and cohesive strength of the first layer can be adjusted.

Examples of the cross-linking agent (f) include an organic polyvalent isocyanate compound, an organic polyvalent imine compound, a metal chelate-based cross-linking agent (i.e., a cross-linking agent having a metal chelate structure), an aziridine-based cross-linking agent (i.e., having an aziridinyl group cross-linking agent) and the like.

Examples of the organic polyisocyanate compounds include aromatic polyisocyanate compounds, aliphatic polyisocyanate compounds and alicyclic polyisocyanate compounds (hereinafter collectively referred to as "aromatic polyisocyanate compounds, etc."). trimers, isocyanurates and adducts of the aromatic polyvalent isocyanate compounds; terminal isocyanate urethane prepolymers obtained by reacting the aromatic polyvalent isocyanate compounds and the like with polyol compounds. etc. The "adduct" is a mixture of the aromatic polyisocyanate compound, the aliphatic polyisocyanate compound or the alicyclic polyisocyanate compound and a low molecular weight compound such as ethylene glycol, propylene glycol, neopentyl glycol, trimethylolpropane or castor oil. It means a reactant with a compound containing molecularly active hydrogen. Examples of the adduct include a xylylene diisocyanate adduct of trimethylolpropane as described later. The term "terminal isocyanate urethane prepolymer" means a prepolymer having urethane bonds and an isocyanate group at the end of the molecule.

More specifically, the organic polyvalent isocyanate compound includes, for example, 2,4-tolylene diisocyanate; 2,6-tolylene diisocyanate; 1,3-xylylene diisocyanate; 1,4-xylylene diisocyanate; diphenylmethane-4 ,4'-diisocyanate; diphenylmethane-2,4'-diisocyanate; 3-methyldiphenylmethane diisocyanate; hexamethylene diisocyanate; isophorone diisocyanate; dicyclohexylmethane-4,4'-diisocyanate; Compounds in which one or more of tolylene diisocyanate, hexamethylene diisocyanate and xylylene diisocyanate are added to all or part of the hydroxyl groups of polyols such as propane; lysine diisocyanate and the like.

Examples of the organic polyvalent imine compound include N,N'-diphenylmethane-4,4'-bis(1-aziridinecarboxamide), trimethylolpropane-tri-β-aziridinylpropionate, and tetramethylolmethane. -tri-β-aziridinylpropionate, N,N'-toluene-2,4-bis(1-aziridinecarboxamide) triethylene melamine, and the like.

When an organic polyvalent isocyanate compound is used as the cross-linking agent (f), it is preferable to use a hydroxyl group-containing polymer as the polymer component (a). When the cross-linking agent (f) has an isocyanate group and the polymer component (a) has a hydroxyl group, the reaction between the cross-linking agent (f) and the polymer component (a) easily forms a cross-linked structure in the first layer. can be introduced.

The cross-linking agent (f) contained in the first adhesive composition and the first layer may be of one type or two or more types, and when there are two or more types, the combination and ratio thereof can be arbitrarily selected. .

In the first adhesive composition and the first layer, the content of the cross-linking agent (f) is preferably 0 to 5 parts by mass with respect to 100 parts by mass of the polymer component (a). It is more preferably ~3 parts by mass, more preferably 0 to 1 part by mass, and 0 parts by mass, that is, the first adhesive composition and the first layer contain the cross-linking agent (f) It is particularly preferred not to. When the content of the cross-linking agent (f) is equal to or less than the upper limit, the embedding property of the substrate of the first layer becomes higher.

(Energy ray curable resin (g))
Since the first layer contains the energy ray-curable resin (g), the properties can be changed by irradiation with energy rays.

The energy ray-curable resin (g) is obtained by polymerizing (curing) an energy ray-curable compound.
Examples of the energy ray-curable compound include compounds having at least one polymerizable double bond in the molecule, and acrylate compounds having a (meth)acryloyl group are preferred.

Examples of the acrylate compounds include trimethylolpropane tri(meth)acrylate, tetramethylolmethane tetra(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta ( Chain aliphatic skeleton-containing (meth)acrylates such as meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butylene glycol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate; Cycloaliphatic skeleton-containing (meth)acrylates such as cyclopentanyl di(meth)acrylate; polyalkylene glycol (meth)acrylates such as polyethylene glycol di(meth)acrylate; oligoester (meth)acrylates; urethane (meth)acrylate oligomers epoxy-modified (meth)acrylates; polyether (meth)acrylates other than the above-mentioned polyalkylene glycol (meth)acrylates; and itaconic acid oligomers.

The weight average molecular weight of the energy ray-curable resin (g) is preferably 100-30,000, more preferably 300-10,000.

The energy ray-curable resin (g) contained in the first adhesive composition may be of one type or two or more types, and when there are two or more types, the combination and ratio thereof can be arbitrarily selected.
As one aspect, the energy ray-curable resin (g) is preferably at least one selected from the group consisting of tricyclodecanedimethylol diacrylate and ε-caprolactone-modified tris-(2-acryloxyethyl) isocyanurate. .

When using the energy ray-curable resin (g), the content of the energy ray-curable resin (g) in the first adhesive composition is 1 to 95 mass with respect to the total mass of the first adhesive composition. %, more preferably 5 to 90% by mass, particularly preferably 10 to 85% by mass.

(Photoinitiator (h))
When the first adhesive composition contains the energy ray-curable resin (g), it contains a photopolymerization initiator (h) in order to efficiently promote the polymerization reaction of the energy ray-curable resin (g). may

Examples of the photopolymerization initiator (h) in the first adhesive composition include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, and benzoin dimethyl ketal. Acetophenone compounds such as acetophenone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, 2,2-dimethoxy-1,2-diphenylethan-1-one; bis(2,4 ,6-trimethylbenzoyl)phenylphosphine oxide, 2,4,6-trimethylbenzoyldiphenylphosphine oxide and other acylphosphine oxide compounds; benzylphenyl sulfide, tetramethylthiuram monosulfide and other sulfide compounds; 1-hydroxycyclohexylphenyl α-ketol compounds such as ketones; azo compounds such as azobisisobutyronitrile; titanocene compounds such as titanocene; thioxanthone compounds such as thioxanthone; peroxide compounds; -diethylthioxanthone; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone; quinone compounds such as 1-chloroanthraquinone and 2-chloroanthraquinone; .
Moreover, as a photoinitiator (h), photosensitizers, such as an amine, etc. are mentioned, for example.

The photopolymerization initiator (h) contained in the first adhesive composition may be of one type or two or more types, and when two or more types are used, the combination and ratio thereof can be arbitrarily selected.
In one aspect, the photoinitiator (h) is preferably 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butanone-1.

When the photopolymerization initiator (h) is used, the content of the photopolymerization initiator (h) in the first adhesive composition and the first layer is 100 parts by mass of the energy ray-curable resin (g). On the other hand, it is preferably 0.1 to 20 parts by mass, more preferably 1 to 10 parts by mass, and particularly preferably 2 to 5 parts by mass.

(General purpose additive (i))
The general-purpose additive (I) may be a known one, can be arbitrarily selected according to the purpose, and is not particularly limited. Preferred general-purpose additives (I) include, for example, plasticizers, antistatic agents, antioxidants, colorants (dyes, pigments), gettering agents, and the like.

The general-purpose additive (i) contained in the first adhesive composition and the first layer may be of one type or two or more types, and when there are two or more types, the combination and ratio thereof are arbitrarily selected. can.
The contents of the general-purpose additive (i) in the first adhesive composition and the first layer are not particularly limited, and may be appropriately selected according to the purpose.

(solvent)
The first adhesive composition preferably further contains a solvent. The first adhesive composition containing a solvent has good handleability.
The solvent is not particularly limited, but preferred examples include hydrocarbons such as toluene and xylene; methanol, ethanol, 2-propanol, isobutyl alcohol (also referred to as 2-methylpropan-1-ol), 1-butanol, and the like. esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; amides such as dimethylformamide and N-methylpyrrolidone (ie, compounds having an amide bond).
The number of solvents contained in the first adhesive composition may be one, or two or more, and when two or more, the combination and ratio thereof can be arbitrarily selected.

The solvent contained in the first adhesive composition is preferably methyl ethyl ketone or the like because the components contained in the first adhesive composition can be more uniformly mixed.

A preferred example of the first adhesive composition includes a polymer component (a), an epoxy thermosetting resin (b), a curing accelerator (c) and a coupling agent (e). In addition to these, those containing either one or both of the filler (d) and the general-purpose additive (i) are also included.

<<Method for producing the first adhesive composition>>
The first adhesive composition is obtained by blending the constituent components.
There are no particular restrictions on the order of addition of each component when blending, and two or more components may be added at the same time.
When a solvent is used, the solvent may be mixed with any compounding component other than the solvent and used by diluting this compounding component in advance, or any compounding component other than the solvent may be diluted in advance. You may use by mixing a solvent with these compounding ingredients, without preserving.

The method of mixing each component at the time of blending is not particularly limited, and may be selected from known methods such as a method of mixing by rotating a stirrer or a stirring blade; a method of mixing using a mixer; a method of mixing by applying ultrasonic waves. It can be selected as appropriate.
The temperature and time at which each component is added and mixed are not particularly limited as long as each compounded component does not deteriorate, and may be adjusted as appropriate, but the temperature is preferably 15 to 30°C.

◎ Second layer (second film)
The said 2nd layer (2nd film) has adhesiveness and energy-beam curability as above-mentioned.
The second layer may be thermosetting (thermosetting) or non-thermosetting (non-thermosetting).
In particular, the second layer preferably does not have thermosetting properties and has energy ray-curing properties.

Both the non-curable second layer and the non-curable second layer can be attached by lightly pressing onto various adherends.
Moreover, the second layer may be one that can be applied to various adherends by heating to soften it, regardless of whether or not it is cured.
Both the non-curable second layer and the cured product of the curable second layer can maintain sufficient adhesive properties even under severe high-temperature and high-humidity conditions.

The test laminate having an adhesive strength after immersion of 6 N/25 mm or more is produced as follows.
That is, a second layer having a thickness of 10 μm and a width of more than 25 mm is prepared as a test piece.
The second layer is prepared, for example, as a laminate with a release film, and by using this laminate, the test laminate can be produced more easily. In this case, the release film should be removed at an appropriate timing.

The length of the test piece is not particularly limited as long as the peel test described below can be stably performed, but is preferably 15 cm or more and 30 cm or less, for example.

This test piece is then attached to a silicon mirror wafer.
The test piece is preferably attached to a silicon mirror wafer while being heated to 35 to 45°C.
Also, the application speed and application pressure when the test piece is applied to the silicon mirror wafer are not particularly limited. For example, the application speed is preferably 5 to 20 mm/s, and the application pressure is preferably 0.1 to 1.0 MPa.

Next, a band-shaped strong adhesive tape with a width of 25 mm is attached to the exposed surface (surface opposite to the silicon mirror wafer side) of the test piece after this application (that is, the second layer after application of the silicon mirror wafer). .

Next, a band-shaped incision with a width of 25 mm is formed along the outer periphery of the strong adhesive tape in the test piece (second layer) after the strong adhesive tape is attached. This incision is formed in the entire thickness direction of the test piece. That is, the test piece is cut into strips having a width of 25 mm.

Next, the cut test piece together with the silicon mirror wafer (in other words, the silicon mirror wafer including the cut test piece) is immersed in pure water at 23° C. for 2 hours. At this time, the silicon mirror wafer having the cut test piece is entirely submerged in pure water (in other words, both the entire cut test piece and the entire silicon mirror wafer are submerged in pure water. ), placed in pure water.
It is preferable to immerse the silicon mirror wafer having the cut test piece in pure water immediately after its preparation. By doing so, the adhesive strength of the test laminate can be measured with higher accuracy.
The silicon mirror wafer with the cut test piece is preferably immersed in pure water in a dark place. By doing so, the adhesive strength of the test laminate can be measured with higher accuracy.

After immersing the silicon mirror wafer with the cut test piece in pure water for 2 hours, it is pulled out of the pure water, and if excess water droplets adhere to the surface, the water droplets are removed.
Next, by irradiating the cut test piece (second layer) with an energy ray, the strip-shaped test piece is cured with an energy ray.

The energy ray irradiation conditions are not particularly limited as long as the test piece is sufficiently energy ray cured. For example, the illuminance of energy rays during energy ray curing is preferably 4 to 280 mW/cm ² . It is preferable that the light amount of the energy ray during the energy ray curing is 3 to 1000 mJ/cm ² .

As described above, a test laminate obtained by immersion in pure water, in which the cured product of the test piece (second layer) is attached to the silicon mirror wafer, is obtained.

So far, the case of using the second layer as a laminate with a release film has been described, but the second layer may be used in the form of a laminate with the first layer, that is, a die bonding film. Thus, when the die bonding film is subjected to the measurement of the adhesive strength, the strong adhesive tape is applied to the exposed surface of the first layer (the side opposite to the second layer side) instead of the exposed surface of the second layer. surface). In addition, when cutting the test piece (second layer) into strips, cuts are formed in the entire thickness direction of the die bonding film (the first layer and the second layer, the entire thickness direction), and the die is cut. The entire bonding film may be cut into strips. As in the case of the second layer alone, the die bonding film may be used as a laminate with a release film, and in this case also, the release film may be removed at an appropriate timing.

The post-immersion adhesive strength of the test laminate is measured as follows.
That is, at normal temperature (for example, under the condition of 23° C.), the strong adhesive tape is pulled on the test laminate at a peeling (pulling) speed of 300 mm/min to form a peeling surface on the test laminate. At this time, so-called 180° peeling is performed by pulling the strong adhesive tape so that the newly formed peeling surfaces form an angle of 180°. In other words, the strong adhesive tape pulls one end toward the other end. Then, the peeling force (load, N/25 mm) measured when interfacial peeling occurred between the cured product of the second layer and the silicon mirror wafer was calculated as the adhesive force after immersion (into pure water Adhesive force between the cured product of the second layer with a width of 25 mm and the silicon mirror wafer in the test laminate after immersion).
The strong adhesive tape can be pulled, for example, by using a known tensile tester.

So far, the method for measuring the adhesive strength (adhesive strength after immersion) between the cured product of the second layer of the test laminate that has been immersed in pure water and the silicon mirror wafer has been described. For the test laminate that has not been immersed in pure water (in this specification, it may be abbreviated as the "non-immersion test laminate"), the second layer having a width of 25 mm is formed in the same manner. and the silicon mirror wafer (in this specification, it may be abbreviated as "non-immersion adhesive strength") (N/25 mm). The non-immersion adhesion can be measured in the same manner as the post-immersion adhesion described above, except that a test laminate that has not been immersed in pure water is used.

For the non-immersion test laminate, for example, instead of performing the step of immersing the silicon mirror wafer having the cut test piece in pure water at 23 ° C. for 2 hours, in a dark place under an air atmosphere, It can be produced in the same manner as in the case of the test laminate, except that the step of standing and storing for 30 minutes under conditions of a temperature of 23° C. and a relative humidity of 50% is performed.

In both the post-immersion adhesive strength and non-immersion adhesive strength measurements, interfacial peeling between the cured product of the second layer and the silicon mirror wafer (in this specification, " In addition to interfacial peeling between the strong adhesive tape and its adjacent layers (for example, the cured product of the second layer, the first layer, etc.) (this specification In the book, it may be referred to as "peeling with a strong adhesive tape"), cohesive failure, etc. may occur in the cured product of the second layer.
When the adhesion between the cured product of the second layer and the silicon mirror wafer is sufficiently large, during the peeling test, for example, peeling on the silicon mirror wafer (cured product of the second layer and the silicon mirror wafer and interfacial peeling), before cohesive failure occurs in the cured product of the second layer, peeling with a strong adhesive tape (interfacial peeling between the strong adhesive tape and its adjacent layer) ) is likely to occur.
In this case, if the peel force when peeling occurs with the strong adhesive tape is 6 N/25 mm or more, the adhesive force between the cured product of the second layer with a width of 25 mm and the silicon mirror wafer. can be determined to be 6 N/25 mm or more.
On the other hand, when the adhesive force between the cured product of the second layer and the silicon mirror wafer is small, during the peel test, for example, peeling occurs on the silicon mirror wafer before peeling occurs on the strong adhesive tape. easily occur.

The post-immersion adhesive strength is 6 N/25 mm or more, preferably 7 N/25 mm or more, more preferably 8 N/25 mm or more, and even more preferably 9 N/25 mm or more. When the adhesive strength after immersion is equal to or higher than the lower limit, the transferability of the cured product of the second layer to the semiconductor chip becomes higher when picking up a semiconductor chip having a small size.

The upper limit of the adhesive strength after immersion is not particularly limited.
For example, in the case of the cured product of the second layer having an adhesive strength after immersion of 20 N/25 mm or less, it is easier to obtain the constituent raw materials.

The post-immersion adhesive strength can be appropriately adjusted within a range set by arbitrarily combining the preferred lower limit and upper limit described above. For example, the adhesive strength after immersion is preferably 6 to 20 N/25 mm, more preferably 7 to 20 N/25 mm, still more preferably 8 to 20 N/25 mm, and particularly preferably 9 to 20 N/25 mm. Also, as another aspect, it may be 10 to 20 N/25 mm. However, these are examples of the post-immersion adhesive force.

Although the non-immersion adhesive strength is not particularly limited, it is preferably equal to or greater than the post-immersion adhesive strength.
For example, the non-immersion adhesive strength is any of 6 N/25 mm or more, 7 N/25 mm or more, 8 N/25 mm or more, and 9 N/25 mm or more, and is equal to or greater than the post-immersion adhesive strength. good too.
Further, the non-immersion adhesive strength may be 20 N/25 mm or less, and may be equal to or greater than the post-immersion adhesive strength.
The non-immersion adhesive strength is any of 6 to 20 N/25 mm, 7 to 20 N/25 mm, 8 to 20 N/25 mm, and 9 to 20 N/25 mm, and is equivalent to the post-immersion adhesive strength. or more. Also, as another aspect, it may be 10 to 20 N/25 mm.

As one aspect, the die bonding film, which is one embodiment of the present invention,
The second layer may have properties such that the post-immersion adhesion is 6 to 20 N/25 mm and the non-immersion adhesion is 6 to 20 N/25 mm.

The second layer may consist of one layer (single layer) or may consist of two or more layers. The combination of multiple layers is not particularly limited.

Although the thickness of the second layer is not particularly limited, it is preferably 1 to 40 μm, more preferably 3 to 30 μm, and particularly preferably 5 to 20 μm. When the thickness of the second layer is equal to or more than the lower limit, the adhesion of the second layer to the adherend (semiconductor wafer, semiconductor chip) is increased, and as a result, when picking up a semiconductor chip having a small size. , the transferability of the cured product of the second layer to the semiconductor chip is enhanced. Since the thickness of the second layer is equal to or less than the upper limit, the second layer (die bonding film) can be cut more easily in the semiconductor chip manufacturing process described later, and cut pieces derived from the second layer can be further reduced.
Here, the "thickness of the second layer" means the thickness of the entire second layer. means the thickness of

A second layer (second film) can be formed from a second adhesive composition containing its constituent materials. For example, the second layer can be formed on the target site by applying the second adhesive composition to the surface on which the second layer is to be formed, and drying it if necessary.
The content ratio of the components that do not vaporize at room temperature in the second adhesive composition is usually the same as the content ratio of the components in the second layer.

The second adhesive composition can be applied in the same manner as the first adhesive composition, and the drying conditions for the second adhesive composition can be the same as the drying conditions for the first adhesive composition. can.
Next, the second adhesive composition will be described in detail.

<<second adhesive composition>>
The type of the second adhesive composition can be selected according to the properties of the second layer, such as whether or not the second layer is thermosetting.
The second adhesive composition has energy ray curability and may have both energy ray curability and heat curability.
The ingredients of the second adhesive composition and the second layer include the same ingredients as the above-mentioned ingredients of the first adhesive composition and the first layer. The effects of the ingredients contained therein are also the same as those of the first adhesive composition and the first layer.
Examples of the second adhesive composition include those containing a polymer component (a), a filler (d), an energy ray-curable resin (g) and a photopolymerization initiator (h).

(Polymer component (a))
The polymer component (a) in the second adhesive composition and the second layer is the same as the polymer component (a) in the first adhesive composition and the first layer.

The second adhesive composition and the polymer component (a) contained in the second layer may be of one type or two or more types. can.

In the second adhesive composition, the ratio of the content of the polymer component (a) to the total content (total mass) of all components other than the solvent (that is, the content of the polymer component (a) in the second layer ) is preferably 10 to 45% by mass, more preferably 15 to 40% by mass, and particularly preferably 20 to 35% by mass, regardless of the type of polymer component (a).

In the second adhesive composition and the second layer, the ratio of the content of the acrylic resin to the total content (total mass) of the polymer component (a) is preferably 80 to 100% by mass. It is more preferably up to 100% by mass, more preferably 90 to 100% by mass, and may be, for example, 95 to 100% by mass.

(Filler (d))
The filler (d) in the second adhesive composition and the second layer is the same as the filler (d) in the first adhesive composition and the first layer.

The second adhesive composition and the filler (d) contained in the second layer may be of only one kind, or may be of two or more kinds. .

In the second adhesive composition, the ratio of the content of the filler (d) to the total content (total mass) of all components other than the solvent (that is, the content of the filler (d) in the second layer) is , preferably 25 to 70% by mass, more preferably 35 to 67% by mass, and particularly preferably 45 to 64% by mass. When the content of the filler (d) is within such a range, it becomes easier to adjust the thermal expansion coefficient, moisture absorption rate and heat dissipation of the second layer.

When using a filler (d) having an average particle diameter of 1 to 1000 nm, the average particle diameter is 1 with respect to the total content (total mass) of the filler (d) in the second adhesive composition and the second layer. The content ratio of the filler (d) having a diameter of up to 1000 nm is preferably 80 to 100% by mass, more preferably 85 to 100% by mass, even more preferably 90 to 100% by mass. , for example, 95 to 100% by mass.

(Energy ray curable resin (g))
The energy ray-curable resin (g) in the second adhesive composition and the second layer is the same as the energy ray-curable resin (g) in the first adhesive composition and the first layer.

The energy ray-curable resin (g) contained in the second adhesive composition and the second layer may be of only one type, or may be of two or more types. can be selected to
As one aspect, the energy ray-curable resin (g) contained in the second adhesive composition and the second layer is tricyclodecanedimethylol diacrylate and ε-caprolactone-modified tris-(2-acryloxyethyl) isocyanate At least one selected from the group consisting of nurates is preferred.

In the second adhesive composition, the content of the energy ray-curable resin (g) is preferably 1 to 95% by mass, more preferably 3 to 90% by mass, relative to the total mass of the second adhesive composition. is more preferable, and 5 to 85% by mass is particularly preferable.

(Photoinitiator (h))
The photoinitiator (h) in the second adhesive composition and the second layer is the same as the photoinitiator (h) in the first adhesive composition and the first layer.

The photopolymerization initiator (h) contained in the second adhesive composition and the second layer may be only one type, or may be two or more types, and when there are two or more types, the combination and ratio thereof are arbitrary You can choose.
In one aspect, the photoinitiator (h) in the second adhesive composition and second layer is preferably 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butanone-1.

In the second adhesive composition and the second layer, the content of the photopolymerization initiator (h) is 0.1 to 20 parts by mass with respect to 100 parts by mass of the energy ray-curable resin (g). preferably 0.5 to 15 parts by mass, particularly preferably 1 to 10 parts by mass.

In order to improve various physical properties of the second layer, in addition to the polymer component (a), the filler (d), the energy ray-curable resin (g) and the photopolymerization initiator (h), if desired, Other components not applicable to these may be contained.
Other components contained in the second layer include, for example, a coupling agent (e), an epoxy thermosetting resin (b), a curing accelerator (c), a cross-linking agent (f), and general-purpose additives (i). etc.
Among these, preferred other components include the coupling agent (e) and the general-purpose additive (i).

(Coupling agent (e))
The coupling agent (e) in the second adhesive composition and the second layer is the same as the coupling agent (e) in the first adhesive composition and the first layer.
Among them, the coupling agent (e) is preferably an oligomeric or polymeric organosiloxane.

The second adhesive composition and the coupling agent (e) contained in the second layer may be of only one type, or may be of two or more types. can.

When the coupling agent (e) is used, the content of the coupling agent (e) in the second adhesive composition and the second layer is 0 with respect to the content of 100 parts by mass of the polymer component (a). .1 to 20 parts by mass, more preferably 0.5 to 15 parts by mass, and particularly preferably 1 to 10 parts by mass. When the content of the coupling agent (e) is at least the lower limit value, improvement in the dispersibility of the filler (d) in the resin, improvement in adhesion of the second layer to the adherend, etc. The effects of using the coupling agent (e) are more remarkably obtained. When the content of the coupling agent (e) is equal to or less than the upper limit, outgassing is further suppressed.

When the oligomeric or polymeric organosiloxane is used as the coupling agent (e), in the second adhesive composition and the second layer, the oligomer with respect to the total content (total mass) of the coupling agent (e) The percentage content of type or polymeric type organosiloxanes may be anywhere from 25 to 100% by weight and from 40 to 100% by weight.

(Epoxy thermosetting resin (b) (epoxy resin (b1) and thermosetting agent (b2))
The epoxy thermosetting resin (b) consists of an epoxy resin (b1) and a thermosetting agent (b2).
The epoxy thermosetting resin (b) (epoxy resin (b1), thermosetting agent (b2)) in the second adhesive composition and the second layer is the epoxy thermosetting resin in the first adhesive composition and the first layer. It is the same as the curable resin (b) (epoxy resin (b1), thermosetting agent (b2)).

The epoxy resin (b1) and the thermosetting agent (b2) contained in the second adhesive composition and the second layer may each be of one type or two or more types. can be selected arbitrarily.

When the epoxy resin (b1) and the thermosetting agent (b2) are used, the content of the thermosetting agent (b2) in the second adhesive composition and the second layer is equal to the content of the epoxy resin (b1) of 100 parts by mass. is preferably 10 to 200 parts by mass. When the content of the thermosetting agent (b2) is at least the lower limit, curing of the second layer proceeds more easily. When the content of the thermosetting agent (b2) is equal to or less than the upper limit, the moisture absorption rate of the second layer is reduced, and the reliability of the package obtained using the second layer is further improved.

When the epoxy resin (b1) and the thermosetting agent (b2) are used, the content of the epoxy thermosetting resin (b) (the epoxy resin (b1) and the thermosetting agent The total content of (b2)) is preferably 400 to 1200 parts by mass with respect to 100 parts by mass of the polymer component (a). When the content of the epoxy thermosetting resin (b) is within such a range, it becomes easier to adjust the adhesive strength of the second layer.

(Curing accelerator (c))
When the second adhesive composition and the second layer contain the epoxy thermosetting resin (b), it is preferable to contain the curing accelerator (c).
The curing accelerator (c) in the second adhesive composition and the second layer is the same as the curing accelerator (c) in the first adhesive composition and the first layer.

The curing accelerator (c) contained in the second adhesive composition and the second layer may be only one type, or may be two or more types, and when there are two or more types, the combination and ratio thereof are arbitrarily selected. can.

When using the curing accelerator (c), the content of the curing accelerator (c) in the second adhesive composition and the second layer is based on the content of 100 parts by mass of the epoxy thermosetting resin (b). It is preferably 0.01 to 5 parts by mass, more preferably 0.1 to 2 parts by mass. When the content of the curing accelerator (c) is at least the lower limit, the effect of using the curing accelerator (c) can be obtained more remarkably. When the content of the curing accelerator (c) is equal to or less than the upper limit, for example, the highly polar curing accelerator (c) can adhere to the adherend in the second layer under high temperature and high humidity conditions. The effect of suppressing migration to the interface side and segregation is increased, and the reliability of the package obtained using the second layer is further improved.

(Crosslinking agent (f))
The cross-linking agent (f) in the second adhesive composition and the second layer is the same as the cross-linking agent (f) in the first adhesive composition and the first layer.

The cross-linking agent (f) contained in the second adhesive composition and the second layer may be of one type or two or more types, and when there are two or more types, the combination and ratio thereof can be arbitrarily selected. .

In the second adhesive composition and the second layer, the content of the cross-linking agent (f) is preferably 0 to 5 parts by mass per 100 parts by mass of the polymer component (a).

(General purpose additive (i))
The general purpose additive (i) in the second adhesive composition and the second layer is the same as the general purpose additive (i) in the first adhesive composition and the first layer.

The second adhesive composition and the general-purpose additive (i) contained in the second layer may be of only one type, or may be of two or more types, and when there are two or more types, the combination and ratio thereof may be arbitrarily selected. can.
The contents of the second adhesive composition and the general-purpose additive (i) in the second layer are not particularly limited, and may be appropriately selected according to the purpose.

(solvent)
The second adhesive composition preferably further contains a solvent. The second adhesive composition containing a solvent has good handleability.
The solvent in the second adhesive composition is the same as the solvent in the first adhesive composition.

The solvent contained in the second adhesive composition is preferably methyl ethyl ketone or the like from the viewpoint that the components contained in the second adhesive composition can be more uniformly mixed.

A preferred example of the second adhesive composition contains a polymer component (a), a filler (d), an energy ray-curable resin (g), a photopolymerization initiator (h), and a coupling agent (e). In addition to these, those containing the general-purpose additive (i) are also exemplified.

<<Method for producing the second adhesive composition>>
The second adhesive composition can be prepared in the same manner as the first adhesive composition described above.

The thickness of the die bonding film (the total thickness of the first layer and the second layer) is preferably 2 to 80 μm, more preferably 6 to 60 μm, particularly preferably 10 to 40 μm. .

FIG. 1 is a cross-sectional view schematically showing a die bonding film according to one embodiment of the present invention. In addition, in the drawings used in the following description, in order to make the features of the present invention easier to understand, there are cases where the main parts are enlarged for convenience, and the dimensional ratios of each component are the same as the actual ones. not necessarily.

The die bonding film 13 shown here comprises a first layer 131 and a second layer 132 on the first layer 131 .
The die bonding film 13 has a first release film 151 on one surface (in this specification, sometimes referred to as a “first surface”) 13a, and the other side opposite to the first surface 13a. A second peeling film 152 is provided on the surface (in this specification, sometimes referred to as a "second surface") 13b.
Such a die bonding film 13 is suitable for storage as a roll, for example.

In the die bonding film 13, a first release film 151 is laminated, and the second release film 152 is laminated on the surface 131b of the first layer 131 opposite to the second layer 132 side (in this specification, sometimes referred to as the “second surface”) 131b. ing.
The second surface 131 b of the first layer 131 is the same as the second surface 13 b of the die bonding film 13 , and the first surface 132 a of the second layer 132 is the same as the first surface 13 a of the die bonding film 13 .

The initial detection temperature (T ₀ ) of the first layer of the die bonding film 13 is 75° C. or less.
Of the die bonding film 13, the second layer has adhesiveness and energy ray curability, and the adhesive strength after immersion of the test laminate produced using the test piece of the second layer is 6 N / 25 mm or more.

Both the first release film 151 and the second release film 152 may be known ones.
The first release film 151 and the second release film 152 may be the same as each other, or may be different from each other, for example, the peel force required when peeling from the die bonding film 13 is different. good.

In the die bonding film 13 shown in FIG. 1, the first peeling film 151 is removed and the exposed surface produced, in other words, the first surface 132a of the second layer 132 is attached to the back surface of a semiconductor wafer (not shown). . Then, the exposed surface produced by removing the second release film 152, in other words, the second surface 131b of the first layer 131, becomes the attachment surface of the support sheet to be described later.

◇ Method for manufacturing die bonding film A die bonding film can be manufactured by, for example, separately forming a first layer (first film) and a second layer (second film) and bonding them together. The method of forming the layer and the second layer is as described above.

For example, on the release film, the first adhesive composition is used to form the first layer in advance, and similarly, separately, on the release film, the second adhesive composition is used to form the second layer in advance. keep forming. At this time, these compositions are preferably applied to the release-treated surface of the release film. Then, the exposed surface opposite to the side in contact with the release film of the formed first layer and the side opposite to the side in contact with the release film of the formed second layer A die bonding film in which the first layer and the second layer are laminated can be obtained by bonding the exposed surface and .
Both the release film in contact with the first layer and the release film in contact with the second layer may be removed at suitable timing when using the die bonding film.

◇ Dicing die bonding sheet A dicing die bonding sheet according to one embodiment of the present invention includes a support sheet, the die bonding film is provided on the support sheet, and the first layer in the die bonding film is It is arranged on the support sheet side.
The dicing die bonding sheet can be used when dicing a semiconductor wafer.
Each layer constituting the dicing die bonding sheet will be described in detail below.

⊚ Support Sheet The support sheet may consist of one layer (single layer), or may consist of two or more layers. When the support sheet is composed of multiple layers, the constituent materials and thicknesses of these multiple layers may be the same or different, and the combination of these multiple layers is not particularly limited as long as the effects of the present invention are not impaired.

Preferable supporting sheets include, for example, those consisting only of a base material; those having a base material and an intermediate layer on the base material;

The support sheet consisting of only the base material is suitable as a carrier sheet or a dicing sheet. In a dicing die bonding sheet provided with a support sheet consisting only of such a base material, the surface (i.e., first surface) opposite to the side provided with the support sheet (i.e., base material) of the die bonding film is a semiconductor It is used by being attached to the back surface of the wafer.

On the other hand, the support sheet comprising a base material and an intermediate layer on the base material is suitable as a dicing sheet. The dicing die bonding sheet provided with such a support sheet is also used with the surface (first surface) opposite to the side provided with the support sheet of the die bonding film attached to the back surface of the semiconductor wafer. .

How to use the dicing die bonding sheet will be described later in detail.
Each layer constituting the support sheet will be described below.

○ Substrate The substrate is sheet-like or film-like, and examples of its constituent materials include various resins.
Examples of the resin include polyethylene such as low-density polyethylene (sometimes abbreviated as LDPE), linear low-density polyethylene (sometimes abbreviated as LLDPE), and high-density polyethylene (sometimes abbreviated as HDPE). Polyolefins other than polyethylene such as polypropylene, polybutene, polybutadiene, polymethylpentene, norbornene resin; Ethylene-vinyl acetate copolymer, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic acid ester copolymer , Ethylene copolymers such as ethylene-norbornene copolymers (copolymers obtained using ethylene as a monomer); Vinyl chloride resins such as polyvinyl chloride and vinyl chloride copolymers (vinyl chloride as a monomer polystyrene; polycycloolefin; polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, polyethylene isophthalate, polyethylene-2,6-naphthalene dicarboxylate, all structural units of which are aromatic cyclic groups Copolymers of two or more of the above polyesters; Poly(meth)acrylic acid esters; Polyurethanes; Polyurethane acrylates; Polyimides; Polyamides; sulfide; polysulfone; polyetherketone and the like.
Examples of the resin include polymer alloys such as mixtures of the polyester and other resins. The polymer alloy of the polyester and the resin other than polyester is preferably one in which the amount of the resin other than the polyester is relatively small.
Further, as the resin, for example, a crosslinked resin in which one or more of the resins exemplified above are crosslinked; Also included are resins.

The resin constituting the substrate may be of one type or two or more types, and when two or more types are used, the combination and ratio thereof can be arbitrarily selected.

The substrate may consist of one layer (single layer), or may consist of a plurality of layers of two or more layers. A combination of layers is not particularly limited.

The thickness of the substrate is preferably 50-300 μm, more preferably 60-150 μm. When the thickness of the base material is in such a range, the flexibility of the dicing die bonding sheet, the adhesion of the dicing die bonding sheet to a semiconductor wafer or semiconductor chip, and the semiconductor with a cured die bonding film described later Chip pick-up performance is further improved.
Here, the "thickness of the base material" means the thickness of the entire base material. means.

It is preferable that the base material has a high thickness accuracy, that is, a material in which variations in thickness are suppressed irrespective of portions. Among the constituent materials described above, examples of materials that can be used to form a base material with high thickness accuracy include polyethylene, polyolefins other than polyethylene, polyethylene terephthalate, polybutylene terephthalate, polyurethane acrylate, and ethylene. - Vinyl acetate copolymers and the like.

The substrate contains various known additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, softeners (plasticizers), etc., in addition to the main constituent materials such as the resins. may

The substrate may be transparent or opaque, colored according to purpose, or may be deposited with other layers. However, the substrate preferably transmits energy rays, and more preferably has high energy ray permeability.

In order to improve adhesion with other layers such as an intermediate layer provided thereon, the substrate is subjected to roughening treatment such as sandblasting, solvent treatment, corona discharge treatment, electron beam irradiation treatment, plasma treatment, Ozone/ultraviolet irradiation treatment, flame treatment, chromic acid treatment, oxidizing treatment such as hot air treatment, etc. may be applied to the surface.
Further, the substrate may have a primer-treated surface.
In addition, the base material is an antistatic coating layer; a layer that prevents the base material from adhering to other sheets or the base material from adhering to the suction table when the dicing die bonding sheets are superimposed and stored. It may have

A base material can be manufactured by a well-known method. For example, a substrate containing a resin can be produced by molding a resin composition containing the resin.

○ Intermediate layer The intermediate layer is not particularly limited as long as it is disposed between the substrate and the die bonding film and exhibits its function.
More specifically, the intermediate layer includes, for example, a peelability improving layer having at least one surface subjected to a peeling treatment, an adhesive layer, and the like.

The peelability improving layer facilitates peeling of the cured die bonding film from the support sheet when picking up a semiconductor chip with a cured die bonding film, which will be described later.
The adhesive layer stabilizes the fixing of the semiconductor wafer on the support sheet during dicing, and facilitates the peeling of the cured die bonding film from the support sheet when picking up the semiconductor chip with the cured die bonding film. and so on.

• Peelability-improving layer The peelability-improving layer is in the form of a sheet or a film.
Examples of the peelability-improving layer include a multi-layer layer including a resin layer and a release treatment layer formed on the resin layer; a single layer containing a release agent; and the like. is mentioned. In the dicing die-bonding sheet, the peelability improving layer is arranged with the peel-treated surface facing the die-bonding film.

Among the peelability improving layers consisting of multiple layers, the resin layer can be produced by molding or coating a resin composition containing a resin, and drying if necessary.
Then, the peelability improving layer consisting of multiple layers can be produced by subjecting one surface of the resin layer to a peeling treatment.

The release treatment of the resin layer can be performed using various known release agents such as alkyd-based, silicone-based, fluorine-based, unsaturated polyester-based, polyolefin-based, and wax-based release agents.
The release agent is preferably an alkyd-based, silicone-based, or fluorine-based release agent in that it has heat resistance.

The resin, which is the constituent material of the resin layer, may be appropriately selected depending on the purpose, and is not particularly limited.
Preferred resins include polyethylene terephthalate (sometimes abbreviated as PET), polyethylene naphthalate (sometimes abbreviated as PEN), polybutylene terephthalate (sometimes abbreviated as PBT), and polyethylene ( (sometimes abbreviated as PE), polypropylene (sometimes abbreviated as PP), and the like.

The resin layer may consist of one layer (single layer), or may consist of two or more layers, and when it consists of multiple layers, these multiple layers may be the same or different, The combination of these multiple layers is not particularly limited.

The single-layer release improving layer can be produced by molding or coating a release composition containing a release agent, and drying if necessary.
Examples of the release agent contained in the release composition include the same release agents as those used in the release treatment of the resin layer.
The release composition may contain the same resin as the resin constituting the resin layer. That is, the single-layer peelability improving layer may contain a resin in addition to the release agent.

The thickness of the peelability improving layer is preferably 10 to 200 μm, more preferably 15 to 150 μm, particularly preferably 25 to 120 μm. When the thickness of the peelability-improving layer is at least the above lower limit, the effect of the peelability-improving layer becomes more pronounced, and the effect of suppressing breakage such as cutting of the peelability-improving layer becomes higher. When the thickness of the peelability improving layer is equal to or less than the upper limit, when picking up a semiconductor chip with a cured die bonding film, which will be described later, a pushing force is easily transmitted to the semiconductor chip with a cured die bonding film. can be done more easily.
Here, the "thickness of the peelability-improving layer" is the total thickness of the resin layer and the peeling-treated layer when the peelability-improving layer consists of a plurality of layers including the resin layer and the peeling-treated layer. means the thickness of Further, when the peelability improving layer is composed of a single layer containing a release agent, it means the thickness of this single layer.

- Adhesive layer The adhesive layer is sheet-like or film-like and contains an adhesive.
Examples of the adhesive include adhesive resins such as acrylic resins, urethane resins, rubber resins, silicone resins, epoxy resins, polyvinyl ethers, polycarbonates, and ester resins, with acrylic resins being preferred. .

In this specification, the term "adhesive resin" is a concept that includes both a resin having adhesiveness and a resin having adhesiveness. , resins that exhibit adhesiveness when used in combination with other components such as additives, and resins that exhibit adhesiveness due to the presence of a trigger such as heat or water.

The pressure-sensitive adhesive layer may consist of one layer (single layer) or may consist of two or more layers. The combination of multiple layers is not particularly limited.

Although the thickness of the adhesive layer is not particularly limited, it is preferably 1 to 100 μm.
Here, the "thickness of the pressure-sensitive adhesive layer" means the thickness of the entire pressure-sensitive adhesive layer. means the thickness of

The pressure-sensitive adhesive layer may be transparent, opaque, or colored depending on the purpose. However, the pressure-sensitive adhesive layer preferably transmits energy rays, and more preferably has high energy-ray permeability.

The adhesive layer may be formed using an energy ray-curable adhesive, or may be formed using a non-energy ray-curable adhesive. A pressure-sensitive adhesive layer formed using an energy ray-curable pressure-sensitive adhesive can easily adjust physical properties before and after curing.

The adhesive layer can be formed using an adhesive composition containing an adhesive. For example, the pressure-sensitive adhesive layer can be formed on the target site by applying the pressure-sensitive adhesive composition to the surface on which the pressure-sensitive adhesive layer is to be formed, and drying it as necessary.

Although the methods for forming the peelability improving layer and the pressure-sensitive adhesive layer have been described so far, the intermediate layer can be formed using an intermediate layer composition containing its constituent materials. For example, the intermediate layer can be formed on the target site by applying the intermediate layer composition to the surface on which the intermediate layer is to be formed and, if necessary, drying it. The intermediate layer can also be formed by molding the intermediate layer composition, depending on the type of the intermediate layer composition.

Next, examples of the dicing die bonding sheet of the present invention will be described below for each type of support sheet with reference to the drawings.

FIG. 2 is a cross-sectional view schematically showing one embodiment of the dicing die bonding sheet of the present invention.
In the drawings after FIG. 2, the same constituent elements as those shown in already explained figures are given the same reference numerals as in the already explained figures, and detailed explanations thereof will be omitted.

A dicing die bonding sheet 1A shown here includes a support sheet 10 and a die bonding film 13 on the support sheet 10 . The support sheet 10 consists of only the base material 11, and the dicing die bonding sheet 1A is, in other words, one surface (in this specification, sometimes referred to as "first surface") 11a of the base material 11. It has a structure in which die bonding films 13 are laminated. Further, the dicing die bonding sheet 1A further includes a release film 15 on the die bonding film 13. As shown in FIG.

In the dicing die bonding sheet 1A, the first layer 131 is laminated on the first surface 11a of the base material 11. As shown in FIG. A second layer 132 is laminated on a surface 131a of the first layer 131 opposite to the substrate 11 side (in this specification, this may be referred to as a "first surface"). In addition, the jig adhesive layer 16 is laminated on a part of the first surface 132a of the second layer 132 (in other words, the first surface 13a of the die bonding film 13), that is, a region near the peripheral edge. . In addition, among the first surface 132 a of the second layer 132 , the surface on which the jig adhesive layer 16 is not laminated and the surface 16 a of the jig adhesive layer 16 which is not in contact with the die bonding film 13 A release film 15 is laminated on (upper surface and side surface).
Here, the first surface 11 a of the base material 11 is also referred to as the first surface 10 a of the support sheet 10 .

The release film 15 is similar to the first release film 151 or the second release film 152 shown in FIG.

The jig adhesive layer 16 may have, for example, a single-layer structure containing an adhesive component, or a plurality of layers in which layers containing an adhesive component are laminated on both sides of a sheet serving as a core material. It may be structural.

In the dicing die bonding sheet 1A, the jig adhesive layer 16 is laminated on the first surface 132a of the second layer 132 (the first surface 13a of the die bonding film 13) with the release film 15 removed. The back surface of a semiconductor wafer (not shown) is adhered to the non-removed area, and the upper surface of the surface 16a of the jig adhesive layer 16 is adhered to a jig such as a ring frame for use.

FIG. 3 is a cross-sectional view schematically showing another embodiment of the dicing die bonding sheet of the present invention.
The dicing die-bonding sheet 1B shown here is the same as the dicing die-bonding sheet 1A shown in FIG. 2 except that the jig adhesive layer 16 is not provided. That is, in the dicing die bonding sheet 1B, the first layer 131 is laminated on the first surface 11a of the base material 11 (the first surface 10a of the support sheet 10), and the first surface 131a of the first layer 131 has the Two layers 132 are laminated, and the release film 15 is laminated on the entire surface of the first surface 132 a of the second layer 132 .
In other words, the dicing die bonding sheet 1B is configured by laminating the base material 11, the first layer 131, the second layer 132 and the release film 15 in this order in the thickness direction thereof.

As in the case of the dicing die bonding sheet 1A shown in FIG. 2, the dicing die bonding sheet 1B shown in FIG. The back surface of a semiconductor wafer (not shown) is attached to a part of the area of , and the area near the peripheral edge of the die bonding film 13 is attached to a jig such as a ring frame for use.

FIG. 4 is a cross-sectional view schematically showing still another embodiment of the dicing die bonding sheet of the present invention.
The dicing die bonding sheet 1C shown here is the same as the dicing die shown in FIG. It is the same as the bonding sheet 1A. The support sheet 10 is a laminate of a substrate 11 and an intermediate layer 12, and the dicing die bonding sheet 1C also has a configuration in which a die bonding film 13 is laminated on the first surface 10a of the support sheet 10. FIG.

In the dicing die bonding sheet 1</b>C, the intermediate layer 12 is laminated on the first surface 11 a of the base material 11 . A first layer 131 is laminated on the surface 12a of the intermediate layer 12 on the side opposite to the substrate 11 side (in this specification, this may be referred to as a "first surface"). A second layer 132 is laminated on the first surface 131 a of the first layer 131 . In addition, the jig adhesive layer 16 is laminated on a part of the first surface 132a of the second layer 132 (in other words, the first surface 13a of the die bonding film 13), that is, a region near the peripheral edge. . In addition, among the first surface 132 a of the second layer 132 , the surface on which the jig adhesive layer 16 is not laminated and the surface 16 a of the jig adhesive layer 16 which is not in contact with the die bonding film 13 A release film 15 is laminated on (upper surface and side surface).

In the dicing die bonding sheet 1C, when the intermediate layer 12 is the peelability improving layer composed of a plurality of layers, for example, the layer on the substrate 11 side of the intermediate layer 12 is the resin layer (not shown), and the intermediate The layer on the die bonding film 13 (first layer 131) side of the layer 12 becomes the release treatment layer (not shown). Therefore, in this case, the first surface 12a of the intermediate layer 12 is the release-treated surface. On the other hand, when the intermediate layer 12 is the single-layer peelability improving layer, the first surface 12a of the intermediate layer 12 is the release-treated surface as described above, but the intermediate layer 12 as a whole is Contains release agent. Thus, when the intermediate layer 12 is a peelability improving layer, the cured die bonding film (the die bonding film 13 in FIG. 4 is cut and Furthermore, the second layer 132 in the die bonding film 13 is easily peeled off.

In the dicing die bonding sheet 1C shown in FIG. 4, the adhesive layer for a jig is formed on the first surface 132a of the second layer 132 (the first surface 13a of the die bonding film 13) with the release film 15 removed. The back surface of a semiconductor wafer (not shown) is attached to the area where the adhesive layer 16 is not laminated, and the upper surface of the surface 16a of the jig adhesive layer 16 is attached to a jig such as a ring frame for use. be done.

FIG. 5 is a cross-sectional view schematically showing still another embodiment of the dicing die bonding sheet of the present invention.
The dicing die-bonding sheet 1D shown here is the same as the dicing die-bonding sheet 1C shown in FIG. 4 except that the jig adhesive layer 16 is not provided and the shape of the die-bonding film is different. That is, the dicing die-bonding sheet 1D has a substrate 11, an intermediate layer 12 on the substrate 11, and a die bonding film 23 on the intermediate layer 12. FIG. The support sheet 10 is a laminate of a substrate 11 and an intermediate layer 12 . The die bonding film 23 is a laminate of a first layer 231 and a second layer 232 . The dicing die bonding sheet 1</b>D also has a configuration in which a die bonding film 23 is laminated on the first surface 10 a of the support sheet 10 .

In the dicing die bonding sheet 1D, the intermediate layer 12 is laminated on the first surface 11a of the base material 11. As shown in FIG. Also, a first layer 231 is laminated on a part of the first surface 12a of the intermediate layer 12, that is, on a region on the central side. A second layer 232 is laminated on the first surface 231 a of the first layer 231 . Then, of the first surface 12a of the intermediate layer 12, the area where the die bonding film 23 is not laminated, and the surface of the die bonding film 23 that is not in contact with the intermediate layer 12 (the first surface 23a and the side surface) A release film 15 is laminated thereon.

When the dicing die bonding sheet 1D is viewed from above in plan view, the die bonding film 23 has a surface area smaller than that of the intermediate layer 12 and has, for example, a circular shape.

In the dicing die bonding sheet 1D shown in FIG. 5, a semiconductor wafer (not shown) is attached to the first surface 232a of the second layer 232 (the first surface 23a of the die bonding film 23) with the release film 15 removed. The rear surface is attached, and the area of the first surface 12a of the intermediate layer 12 where the die bonding film 23 is not laminated is attached to a jig such as a ring frame for use.

In the dicing die bonding sheet 1D shown in FIG. 5, a jig similar to that shown in FIGS. (illustration omitted). In the dicing die bonding sheet 1D having such a jig adhesive layer, the upper surface of the jig adhesive layer is formed into a ring, as in the case of the dicing die bonding sheet shown in FIGS. It is used by being attached to a jig such as a frame.

Thus, the dicing die bonding sheet may be provided with a jig adhesive layer regardless of the form of the support sheet and the die bonding film. Generally, however, as shown in FIGS. 2 and 4, the dicing die bonding sheet provided with the jig adhesive layer preferably has the jig adhesive layer on the die bonding film.

The dicing die bonding sheet of the present invention is not limited to those shown in FIGS. 2 to 5, and part of the configuration shown in FIGS. , or may be a configuration in which another configuration is added to the configuration described above.

For example, the dicing die bonding sheets shown in FIGS. 2 to 5 may be provided with layers other than the base material, the intermediate layer, the die bonding film, and the release film at arbitrary locations.
Further, in the dicing die bonding sheet, a partial gap may be formed between the release film and the layer in direct contact with the release film.
In addition, in the dicing die bonding sheet, the size and shape of each layer can be arbitrarily adjusted according to the purpose.

◇Manufacturing Method of Dicing Die Bonding Sheet The dicing die bonding sheet can be manufactured by, for example, bonding the die bonding film and the support sheet together.

A support sheet comprising a base material and an intermediate layer can be produced by coating the above-described intermediate layer composition on the base material and drying it as necessary. For example, when the intermediate layer is a peelability improving layer, the intermediate layer composition for forming the resin layer is coated on the base material to form the resin layer, and then the exposed surface is peeled off. Peeling treatment may be performed.

A support sheet comprising a substrate and an intermediate layer can also be produced by the following method.
That is, the intermediate layer is formed on the release film in the same manner as in the method for forming the intermediate layer described above, except that the release film is used instead of the substrate. At this time, the intermediate layer composition is preferably applied to the release-treated surface of the release film.
Then, the support sheet can be manufactured by bonding the exposed surface of the intermediate layer (the surface opposite to the release film side) and one surface (first surface) of the substrate.

In addition, the dicing die bonding sheet can be manufactured, for example, without forming the die bonding film and the support sheet in advance.
For example, an intermediate layer is formed on the release film by the method described above. Furthermore, using the first layer (first film) formed on the release film, the second layer (second film) formed on the release film, and the base material, the base material and the formed intermediate A layer, the formed first layer, and the formed second layer are laminated in this order in their thickness direction. At this time, the release film provided on each layer is removed at an appropriate timing as necessary. As described above, a dicing die bonding sheet having an intermediate layer is obtained.

<Method for Manufacturing Semiconductor Chip> The die bonding film and dicing die bonding sheet of the present invention can be used for manufacturing a semiconductor chip, more specifically, a semiconductor chip with a cured die bonding film.

A method for manufacturing a semiconductor chip according to one embodiment of the present invention includes a laminate (1-1) in which a semiconductor wafer is attached to the second layer of the die bonding film and a dicing sheet is attached to the first layer. Or, of the dicing die bonding sheets, a step of producing a laminate (1-2) in which a semiconductor wafer is attached to the second layer in the die bonding film (in this specification, "laminate (1) may be referred to as a “manufacturing step”), and a dicing blade is used to cut the semiconductor wafer in the laminate (1-1) or the laminate (1-2) together with the die bonding film. A step of producing a laminate (2) comprising the first layer of the above, the second layer that has been cut, and the semiconductor chip (cut semiconductor wafer) (in this specification, "laminate (2) production may be referred to as a "process"), and the cut second layer in the laminate (2) is cured with an energy beam to obtain a cured product, whereby the cut first layer, the cured product, and a step of producing a laminate (3) including the semiconductor chip (in this specification, may be referred to as a "laminate (3) production step"), and the laminate (3) is cut A step of separating and picking up the semiconductor chip comprising the first layer of and the cured product from the dicing sheet or support sheet (in this specification, sometimes referred to as a “pick-up step”); include.
In this specification, the laminate (1-1) and laminate (1-2) may be collectively referred to as "laminate (1)".

In the manufacturing method, by using the die bonding film or dicing die bonding sheet, even if the size of the semiconductor chip is small, the cured product of the cut second layer (cut and cured Part or all of the second layer) is prevented from being peeled off from the semiconductor chip, and the transferability of the cured product of the second layer to the semiconductor chip is high.

The manufacturing method will be described in detail below with reference to the drawings.
FIG. 6 is a cross-sectional view for schematically explaining a method of manufacturing a semiconductor chip according to one embodiment of the present invention. Here, a method of manufacturing a semiconductor chip using the dicing die bonding sheet 1A shown in FIG. 2 will be described.

<<Laminate (1) manufacturing process>>
In the laminated body (1) manufacturing process, the semiconductor wafer 9 is attached to the second layer 132 in the die bonding film 13 of the dicing die bonding sheet 1A as shown in FIG. 6(a). A body (1-2) 101 is produced.
Laminate (1-2) 101 includes substrate 11, first layer 131, second layer 132 and semiconductor wafer 9 (in other words, substrate 11, die bonding film 13 and semiconductor wafer 9) in this order. It is configured by being laminated in the thickness direction.

In the laminate ( 1 - 2 ) 101 , the back surface 9 b of the semiconductor wafer 9 is attached to the first surface 132 a of the second layer 132 .
The dicing die bonding sheet 1A is used after removing the release film 15 .

Here, the case of using the dicing die bonding sheet 1A is described, but in this process, the die bonding film 13 is used instead of the dicing die bonding sheet 1A, and the second layer 132 is a semiconductor film. A laminate (1-1) may be produced in which the wafer 9 is attached and the substrate 11 (support sheet 10) is attached as a dicing sheet to the first layer 131. FIG.
The laminate (1-1) includes the substrate 11, the first layer 131, the second layer 132 and the semiconductor wafer 9 (in other words, the substrate 11, the die bonding film 13 and the semiconductor wafer 9) in this order. It is configured by being laminated in the vertical direction.
Thus, the resulting laminate (1-2) and laminate (1-1) are apparently the same and can both be described as laminate (1) 101.

The bonding of the semiconductor wafer 9 to the second layer 132 may be performed by softening the second layer 132 by heating. In that case, the heating temperature of the second layer 132 is preferably 35 to 45.degree.
Also, the bonding speed and bonding pressure when bonding the semiconductor wafer 9 to the second layer 132 are not particularly limited. For example, the application speed is preferably 5 to 20 mm/s, and the application pressure is preferably 0.1 to 1.0 MPa.

When the die bonding film 13 is used instead of the dicing die bonding sheet 1A, the dicing sheet (base material 11, support sheet 10) is attached to the first layer 131, and then the semiconductor wafer 9 is attached to the second layer 132. Sticking is preferred. A known method may be used to attach the dicing sheet to the first layer 131, and for example, the same conditions as when attaching the semiconductor wafer 9 may be employed.

<<Laminate (2) manufacturing process>>
In the laminated body (2) manufacturing process, a dicing blade is used to cut the semiconductor wafer 9 in the laminated body (1) 101 together with the die bonding film 13 (that is, the first layer 131 and the second layer 132). As a result, as shown in FIG. 6B, a laminate (2) 102 including the cut first layer 131', the cut second layer 132', and the semiconductor chip 9' is produced.
In the laminate (2) 102, the cut first layer 131', the cut second layer 132' and the semiconductor chip 9' (in other words, the cut die bonding film 13' and the semiconductor chip 9') are A plurality of laminates laminated in this order in the thickness direction are aligned and fixed on the substrate 11 by the first layer 131'.
In FIG. 6(b), a dicing die bonding sheet 1A from which the die bonding film 13 has been cut is shown with a new reference numeral 1A'.

In this step, dicing is normally performed while water (cutting water) is caused to flow through the contact portion of the dicing blade with the semiconductor wafer 9 . At this time, the first surface 132 a of the second layer 132 and the back surface 9 b of the semiconductor wafer 9 have high adhesion and adhesion, and the first surface 132 a ′ of the cut second layer 132 ′ and the semiconductor chip 9 Since the adhesive strength and adhesion between the 'back surface 9b' and the contact surface are also high, the intrusion of water between these contact surfaces is suppressed.

The size of the semiconductor chip 9' manufactured in this step is not particularly limited, but the length of one side of the semiconductor chip 9' is preferably 0.1 to 2.5 mm. The effect of the present invention can be obtained more remarkably when manufacturing such a small-sized semiconductor chip 9'.

The dicing conditions are not particularly limited and may be appropriately adjusted depending on the purpose.
Normally, the rotation speed of the dicing blade is preferably 15000-50000 rpm, and the moving speed of the dicing blade is preferably 5-75 mm/sec.

At the time of dicing, the base material 11 may be cut with a dicing blade from the first surface 11a to a depth of about 30 μm or less, for example.

<<Laminate (3) manufacturing process>>
In the laminate (3) production step, the cut second layer 132′ in the laminate (2) 102 is cured with energy rays to form a cured product 1320′, as shown in FIG. 6(c). Next, a laminated body (3) 103 including the cut first layer 131', the cured product 1320', and the semiconductor chip 9' is produced.
In the laminate (3) 103, the cut first layer 131', the cut and cured second layer 1320', and the semiconductor chip 9' are laminated in this order in the thickness direction. The laminate is secured in alignment on the substrate 11 by the first layer 131'. Laminate (3) 103 is the same as laminate (2) 102, except that the cut second layer 132' is cured.

Here, the laminate of the cut first layer 131' and the cut and cured second layer 1320' is labeled 130'. In this specification, such a laminate derived from the die bonding film 13 may be referred to as a "cured die bonding film".

As described above, the cut second layer 132' and the semiconductor chip 9' have high adhesive strength and adhesion, but the cut second layer 132' becomes a cured product 1320'. This cured product 1320' and the semiconductor chip 9' have higher adhesive strength and adhesion.

When the cut second layer 132' is irradiated with the energy ray and the second layer 132' is cured with the energy ray, the energy ray irradiation conditions are as long as the second layer 132' is sufficiently cured with the energy ray. It is not particularly limited. For example, the illuminance of energy rays during energy ray curing is preferably 4 to 280 mW/cm ² . It is preferable that the light amount of the energy ray during the energy ray curing is 3 to 1000 mJ/cm ² .
It is preferable to irradiate the cut second layer 132' from the base material 11 side through the base material 11 and the cut first layer 131'.

<<Pickup process>>
In the pick-up step, as shown in FIG. 6(d), in the laminated body (3) 103, the semiconductor chip 9' provided with the cut first layer 131' and the cured product 1320' is placed on the support sheet 10. It is separated from (base material 11) and picked up. In this specification, such a semiconductor chip may be referred to as a "semiconductor chip with a cured die bonding film".

As described above, even if the size of the semiconductor chip 9' is small, the adhesion and adhesion between the second layer 132' that has already been cut and the semiconductor chip 9' are high. Intrusion of water between the surfaces is suppressed. In addition, the adhesion and adhesion between the cured product 1320' and the semiconductor chip 9' are further enhanced. Therefore, in this step, part or all of the cured product 1320' is prevented from being peeled off from the semiconductor chip 9', and the transferability of the cured product 1320' to the semiconductor chip 9' is high.

Here, the arrow I indicates the direction of pickup.
As the separating means 8 for separating the semiconductor chip 9' from the support sheet 10 together with the cut first layer 131' and the cured product 1320', a vacuum collet or the like can be used. In FIG. 6, the separation means 8, which is different from the semiconductor chip with the cured die bonding film, is not shown in cross section.

So far, the method of manufacturing a semiconductor chip using the dicing die bonding sheet 1A has been described. Semiconductor chips can be manufactured in the same manner as described above when a sheet is used, or when a die bonding film is used instead of a dicing die bonding sheet in the first stage. The effect obtained in that case is also the same as in the case of using the dicing die bonding sheet 1A. When using other dicing die-bonding sheets, semiconductor chips can be manufactured by adding arbitrary processes as appropriate according to the structure.

<<Semiconductor device and its manufacturing method>>
A semiconductor chip with a cured die bonding film (a semiconductor chip comprising a cut first layer and a cut and cured second layer) obtained by applying the manufacturing method is a semiconductor device. It is particularly suitable for use in manufacturing.
For example, the semiconductor chip with the cured die-bonding film is die-bonded to the circuit forming surface of the substrate by the cut first layer.
FIG. 7 is a cross-sectional view schematically showing an example of the state in which the semiconductor chip with the cured die bonding film is die-bonded to the circuit forming surface of the substrate in this way. Here, as a semiconductor chip with a cured die bonding film, a semiconductor chip 9 provided with the cut first layer 131' and the cured product 1320', which is the object in the manufacturing method described with reference to FIG. ' is used.

As shown in FIG. 7, the semiconductor chip 9' provided with the cured die bonding film 130' is die-bonded to the circuit forming surface 7a of the substrate 7 by the cut first layer 131' of the film 130'. It is
More specifically, the surface of the cut first layer 131′ opposite to the cured product 1320′ side (in this specification, may be referred to as “second surface”) 131b′ and , and the circuit forming surface 7a of the substrate 7 are in direct contact with each other, and the semiconductor chip 9' is fixed on the substrate 7. As shown in FIG. In addition, description of the circuit in the board|substrate 7 is abbreviate|omitted.

The first layer 131 of the die bonding film 13 described above has good embedding properties in the substrate. Therefore, as shown here, the generation of gaps (voids) is suppressed between the circuit forming surface 7a of the substrate 7 and the cut first layer 131', and the cut first layer 131' ' satisfactorily embeds and covers the circuit forming surface 7a of the substrate 7. FIG.

Here, the die bonding of the semiconductor chip when using the dicing die bonding sheet 1A has been described, but other dicing die bonding of the present invention other than the dicing die bonding sheet 1A, such as the dicing die bonding sheet 1B, 1C or 1D, etc. Even when a sheet is used, or when a die bonding film is used instead of a dicing die bonding sheet in the first stage, the substrate can be embedded satisfactorily by the first layer in the same manner as described above.

As described above, after the semiconductor chip with the cured die bonding film is die-bonded, a semiconductor package and a semiconductor device are manufactured by the same method as the conventional method. For example, if necessary, at least one semiconductor chip is further laminated on the die-bonded semiconductor chip, wire-bonded, and then the whole obtained is sealed with resin to form a semiconductor package. is produced. Using this semiconductor package, a desired semiconductor device is manufactured.
By using the die bonding film or dicing die bonding sheet of the present invention, the embedding property of the substrate by the first layer is good, and as a result, the obtained semiconductor package has high reliability.

As one aspect, the die bonding film, which is one embodiment of the present invention,
comprising a first layer and a second layer provided on the first layer;
The first layer has a property that the initial detection temperature of the melt viscosity is 50 to 75° C. (or may be 50 to 68° C. or 50 to 59° C.);
The second layer has adhesiveness and energy ray curability;
A laminate of the first layer and the second layer having a thickness of 10 μm and a width of more than 25 mm is used as a test piece, and the test piece is attached to a silicon mirror wafer so that the width is 25 mm. The silicon mirror is obtained by cutting a piece, immersing the cut test piece together with the silicon mirror wafer in pure water for 2 hours, and curing the immersed test piece with energy rays to obtain a cured product. When a test laminate in which the cured product was attached to a wafer was produced, the adhesive force between the cured product having a width of 25 mm and the silicon mirror wafer was 6 to 20 N/25 mm, or 10 to A laminate of the first layer and the second layer having a thickness of 10 μm and a width of more than 25 mm is used as a test piece, and the test piece is attached to a silicon mirror wafer. Then, the test piece is cut to a width of 25 mm, and the cut test piece is placed together with the silicon mirror wafer in a dark place in an air atmosphere at a temperature of 23 ° C. and a relative humidity of 50%. A laminate for a non-immersion test in which the cured product was attached to the silicon mirror wafer was prepared by standing and storing for 30 minutes and curing the test piece after standing and storing with an energy ray to obtain a cured product. when the adhesive strength between the cured product having a width of 25 mm and the silicon mirror wafer is 6 to 20 N/25 mm, or 10 to 20 N/25 mm;
die bonding film.

Furthermore, the die bonding film is
The first layer is formed from a first adhesive composition,
wherein the second layer is formed from a second adhesive composition;
The first adhesive composition comprises a polymer component (a), an epoxy thermosetting resin (b) comprising an epoxy resin (b1) and a thermosetting agent (b2), an effect accelerator (c), a filler ( d) and a coupling agent (e),
The polymer component (a) is an acrylic resin obtained by copolymerizing n-butyl acrylate, methyl acrylate, glycidyl methacrylate and 2-hydroxyethyl acrylate, or n-butyl acrylate, ethyl acrylate, Acrylic resin obtained by copolymerizing acrylonitrile and glycidyl methacrylate (the content of the polymer component (a) is 5 to 20% by mass with respect to the total mass (other than the solvent) of the first adhesive composition, preferably 7 to 12%);
The epoxy resin (b1) is a bisphenol A type epoxy resin and a polyfunctional aromatic type (triphenylene type) epoxy resin, or a bisphenol F type epoxy resin and a dicyclopentadiene type epoxy resin;
The thermosetting agent (b2) is an o-cresol type novolac resin (the content of the epoxy thermosetting resin (b) is 800 to 1000 parts by mass, and the content of the thermosetting agent (b2) is preferably 25 to 80 parts by mass with respect to 100 parts by mass of the content of the epoxy resin (b1));
The curing accelerator (c) is an inclusion compound of 1 molecule of 5-hydroxyisophthalic acid (HIPA) and 2 molecules of 2-phenyl-4-methyl-5-hydroxymethylimidazole (2P4MHZ), or 2-phenyl-4 , 5-dihydroxymethylimidazole (the content of the curing accelerator (c) is preferably 0.1 to 2 parts by mass with respect to 100 parts by mass of the epoxy thermosetting resin (b). is);
The filler (d) is spherical silica modified with an epoxy group (the content of the filler (d) is preferably 15 to 30% by mass);
The coupling agent (e) is selected from the group consisting of 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyltriethoxysilane and an oligomeric silane coupling agent having an epoxy group, a methyl group and a methoxy group. (The content of the coupling agent (e) is preferably is 0.1 to 5 parts by mass);
The second adhesive composition contains a polymer component (a), a filler (d), a coupling agent (e), an energy ray-curable resin (g) and a photopolymerization initiator (h),
The polymer component (a) is an acrylic resin obtained by copolymerizing n-butyl acrylate, methyl acrylate, glycidyl methacrylate and 2-hydroxyethyl acrylate, or n-butyl acrylate, ethyl acrylate, It is an acrylic resin obtained by copolymerizing acrylonitrile and glycidyl methacrylate (the content of the polymer component (a) is preferably 20% relative to the total mass (other than the solvent) of the second adhesive composition. ~35% by mass);
The filler (d) is spherical silica or a silica filler modified with an epoxy group (the content of the filler (d) is , preferably 45 to 64% by mass);
The coupling agent (e) is an oligomeric silane coupling agent having an epoxy group, a methyl group and a methoxy group (preferably 0.1 ~ 5 parts by mass);
The energy ray-curable resin (g) is tricyclodecanedimethylol diacrylate or ε-caprolactone-modified tris-(2-acryloxyethyl) isocyanurate (the content of the energy ray-curable resin (g) is , with respect to the total mass of the second adhesive composition (other than the solvent), preferably 5 to 85% by mass);
The photopolymerization initiator (h) is 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butanone-1 (the photopolymerization initiator (h) is the energy ray-curable 1 to 10 parts by mass with respect to 100 parts by mass of the resin (g) content),
It may be a die bonding film.

The present invention will be described in more detail below with reference to specific examples. However, the present invention is by no means limited to the examples shown below.

<Monomer>
Formal names of monomers abbreviated in the examples and comparative examples are shown below.
BA: n-butyl acrylate MA: methyl acrylate HEA: 2-hydroxyethyl acrylate GMA: glycidyl methacrylate EA: ethyl acrylate AN: acrylonitrile

<Raw materials for manufacturing adhesive composition>
Raw materials used in the production of adhesive compositions in the present examples and comparative examples are shown below.

[Polymer component (a)]
(a)-1: Acrylic resin (weight average molecular weight 500000, glass transition temperature −1° C.).
(a)-2: Acrylic resin (weight average molecular weight 700000, glass transition temperature 10°C).
(a)-3: Acrylic resin (weight average molecular weight 800,000, glass transition temperature -30°C).
(a)-4: Thermoplastic resin, polyester ("Vylon 220" manufactured by Toyobo Co., Ltd., weight average molecular weight 35000, glass transition temperature 53 ° C.)
[Epoxy resin (b1)]
(b1)-1: Bisphenol A type epoxy resin ("JER828" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 184 to 194 g/eq)
(b1)-2: Polyfunctional aromatic type (triphenylene type) epoxy resin (“EPPN-502H” manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent 167 g/eq, softening point 54° C., weight average molecular weight 1200)
(b1)-3: Bisphenol F type epoxy resin ("YL983U" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 170 g/eq)
(b1)-4: Dicyclopentadiene type epoxy resin ("XD-1000-L" manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent 248 g/eq)
(b1)-5: Mixture of liquid bisphenol A type epoxy resin and acrylic rubber fine particles (“BPA328” manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent 235 g/eq)
(b1)-6: dicyclopentadiene type epoxy resin (manufactured by DIC "Epiclon HP-7200HH", epoxy equivalent 255 to 260 g/eq)
[Heat curing agent (b2)]
(b2)-1: o-cresol type novolak resin ("Phenolite KA-1160" manufactured by DIC)
(b2)-2: novolak-type phenolic resin (novolak resin other than o-cresol type, "BRG-556" manufactured by Showa Denko KK)
(b2)-3: Dicyandiamide ("ADEKA Hardener EH-3636AS" manufactured by ADEKA, solid dispersion type latent curing agent, active hydrogen content 21 g/eq)
[Curing accelerator (c)]
(c)-1: Clathrate compound of 1 molecule of 5-hydroxyisophthalic acid (HIPA) and 2 molecules of 2-phenyl-4-methyl-5-hydroxymethylimidazole (2P4MHZ) (“HIPA-2P4MHZ” manufactured by Nippon Soda Co., Ltd.) )
(c) -2: 2-phenyl-4,5-dihydroxymethylimidazole (“Curesol 2PHZ-PW” manufactured by Shikoku Kasei Kogyo Co., Ltd.)
[Filler (d)]
(d)-1: Spherical silica modified with an epoxy group (“Admanano YA050C-MKK” manufactured by Admatechs, average particle size 50 nm)
(d)-2: Silica filler ("SC2050MA" manufactured by Admatechs, silica filler surface-modified with an epoxy-based compound, average particle size 500 nm)
[Coupling agent (e)]
(e) -1:3-Glycidoxypropyltrimethoxysilane (“KBM-403” manufactured by Shin-Etsu Silicone Co., Ltd., silane coupling agent, methoxy equivalent weight 12.7 mmol/g, molecular weight 236.3)
(e) -2: 3-Glycidoxypropyltriethoxysilane (“KBE-403” manufactured by Shin-Etsu Silicone Co., Ltd., silane coupling agent, methoxy equivalent weight 8.1 mmol/g, molecular weight 278.4)
(e)-3: Oligomeric silane coupling agent having an epoxy group, a methyl group and a methoxy group (“X-41-1056” manufactured by Shin-Etsu Silicone Co., Ltd., epoxy equivalent 280 g/eq)
(e)-4: Trimethoxy[3-(phenylamino)propyl]silane (“SZ6083” manufactured by Dow Toray Co., Ltd., silane coupling agent)
(e) Silicate compound to which -5:3-glycidoxypropyltrimethoxysilane is added (“MKC Silicate MSEP2” manufactured by Mitsubishi Chemical Corporation)
[Crosslinking agent (f)]
(f)-1: Tolylene diisocyanate trimer adduct of trimethylolpropane ("BHS8515" manufactured by Toyochem)
[Energy ray-curable resin (g)]
(g)-1: Tricyclodecanedimethylol diacrylate ("KAYARAD R-684" manufactured by Nippon Kayaku Co., Ltd., UV curable resin, molecular weight 304)
(g)-2: ε-caprolactone-modified tris-(2-acryloxyethyl) isocyanurate ("A-9300-1CL" manufactured by Shin-Nakamura Chemical Co., Ltd., trifunctional UV-curable compound)
[Photoinitiator (h)]
(h) -1: 1-Hydroxycyclohexylphenyl ketone (“IRGACURE (registered trademark) 184” manufactured by BASF)
(h)-2: 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)-butanone-1 ("IRGACURE (registered trademark) 369" manufactured by BASF)

[Example 1]
<<Production of die bonding film>>
<Production of first adhesive composition>
Polymer component (a)-1 (10 parts by mass), epoxy resin (b1)-1 (20 parts by mass), epoxy resin (b1)-2 (25 parts by mass), thermosetting agent (b2)-1 (25 parts by mass), curing accelerator (c)-1 (0.3 parts by mass), filler (d)-1 (20 parts by mass), coupling agent (e)-1 (0.3 parts by mass), cup A ring agent (e)-2 (0.4 parts by mass) and a coupling agent (e)-3 (0.5 parts by mass) were dissolved or dispersed in methyl ethyl ketone and stirred at 23° C. to obtain a solid concentration of was 55% by mass to obtain a first adhesive composition. In addition, all compounding amounts of components other than methyl ethyl ketone shown here are solid content conversion values.

<Production of Second Adhesive Composition>
Polymer component (a)-1 (22 parts by mass), filler (d)-2 (50 parts by mass), coupling agent (e)-3 (0.5 parts by mass), energy ray curable resin (g )-1 (20 parts by mass) and photopolymerization initiator (h)-2 (0.3 parts by mass) are dissolved or dispersed in methyl ethyl ketone and stirred at 23° C. to give a solid concentration of 55% by mass. A second adhesive composition was obtained. In addition, all compounding amounts of components other than methyl ethyl ketone shown here are solid content conversion values.

<Formation of first layer>
Using a release film ("SP-PET381031H" manufactured by Lintec Co., Ltd., thickness 38 μm) in which one side of a polyethylene terephthalate (PET) film is release-treated by silicone treatment, the release-treated surface is coated with the second obtained above. 1 adhesive composition was applied and dried by heating at 100° C. for 2 minutes to form a first layer having a thickness of 10 μm.

<Formation of second layer>
Using a release film ("SP-PET381031H" manufactured by Lintec Co., Ltd., thickness 38 μm) in which one side of a polyethylene terephthalate (PET) film is release-treated by silicone treatment, the release-treated surface is coated with the second obtained above. 2 adhesive composition was applied and dried by heating at 100° C. for 2 minutes to form a second layer having a thickness of 10 μm.

<Production of die bonding film>
The exposed surface on the side opposite to the release film side of the first layer obtained above and the exposed surface on the side opposite to the release film side of the second layer obtained above were heated to 40°C. C. to obtain a die bonding film with a release film, in which the release film, the first layer, the second layer and the release film are laminated in this order in the thickness direction.

<<Manufacture of dicing die bonding sheet>>
From the die bonding film obtained above, the release film on the first layer side is removed, and the newly generated exposed surface of the first layer is bonded to the base material to obtain the base material, the first layer, and the first layer. A dicing die bonding sheet was obtained in which two layers and a release film (in other words, base material, die bonding film and release film) were laminated in this order in their thickness direction. The substrate used here is a polyethylene film (thickness 100 μm).

<<Evaluation of die bonding film>>
<Calculation of initial detection temperature _T0 of melt viscosity>
The first layer of the die bonding film obtained above was laminated, and immediately a cylindrical test piece with a diameter of 10 mm and a height of 20 mm was produced.
The test piece immediately after preparation is set at the measurement point of a capillary rheometer ("CFT-100D" manufactured by Shimadzu Corporation), and a force of 5.10 N (50 kgf) is applied to the test piece while increasing the temperature of the test piece. The temperature was raised from 50°C to 120°C at 10°C/min. Then, when the test piece starts to be extruded from a hole with a diameter of 0.5 mm and a height of 1.0 mm provided in the die, that is, the temperature at which the detection of the melt viscosity of the test piece starts (initial detection temperature T ₀ ) (°C) was determined. Table 1 shows the results.

<Evaluation of embeddability of substrate>
(Manufacture of semiconductor chips with cured die bonding film)
The peeling film was removed from the dicing die bonding sheet obtained above, and the exposed surface of the newly generated second layer (die bonding film) was used as the mirror surface (back surface) of an 8-inch silicon mirror wafer (thickness 350 μm). affixed to. At this time, the dicing die-bonding sheet was heated to 40° C. and stuck under conditions of a sticking speed of 20 mm/s and a sticking pressure of 0.5 MPa.
As described above, the base material, the first layer, the second layer, and the silicon mirror wafer (in other words, the base material, the die bonding film, and the silicon mirror wafer) are laminated in this order in the thickness direction. Body (1) was obtained.

Next, by dicing using a dicing machine ("DFD6361" manufactured by Disco), the silicon mirror wafer in the laminate (1) is divided, and the first layer and the second layer (die bonding film) are also cut. , a silicon chip with a size of 2 mm×2 mm was obtained. At this time, the dicing was performed by cutting the substrate with the dicing blade to a depth of 20 μm from the first layer bonding surface at a moving speed of the dicing blade of 30 mm / sec and a rotational speed of the dicing blade of 40000 rpm. rice field. In addition, dicing was performed while water (cutting water) was flowing through the contact portion of the dicing blade with the silicon mirror wafer.
As described above, the cut first layer, the cut second layer and the silicon chip (the cut silicon mirror wafer) (in other words, the cut die bonding film and the silicon chip) are arranged in this order in the thickness direction. A laminate (2) was obtained in which a plurality of laminates laminated in (2) were fixed on the substrate in an aligned state by the first layer.

Next, using an ultraviolet irradiation device ("RAD-2000 m/12" manufactured by Lintec Corporation), under the conditions of an illuminance of 220 mW/cm ² and a light intensity of 120 mJ/cm ² , from the outside of the laminate (2) on the substrate side, The cut second layer in the laminate (2) was irradiated with ultraviolet rays to cure the second layer.
As described above, a plurality of laminates in which the cut first layer, the cut second layer cured product, and the silicon chip are laminated in this order in the thickness direction are formed by the first layer as a base. A laminate (3) was obtained which was fixed on the material in an aligned state. Laminate (3) is the same as laminate (2) except that the cut second layer is cured.

Next, using a pick-up die bonding apparatus ("BESTEM D02" manufactured by Canon Machinery), the first layer and the cured second layer (cured The silicon chip with the pre-cured die-bonding film (ie, silicon chip with pre-cured die-bonding film) was pulled apart and picked up.
As described above, a silicon chip with a cured die bonding film was obtained.

Table 1 shows the order of dicing (cutting of the die bonding film), curing of the die bonding film (second layer), and pick-up up to this point. The order in which these three steps are performed is not limited to the evaluation of this item (substrate embeddability), but is the same when evaluating other items described later.
Abbreviations in Table 1 have the following meanings.
DF: Die bonding film DC: Dicing PU: Pickup

(Evaluation of Embedability of Substrate of Die Bonding Film)
A disk-shaped transparent glass substrate (manufactured by NSG Precision, 8 inches in diameter, 100 μm in thickness) was divided into pieces of 8 mm×8 mm in size.
Next, using a pick-up die bonding apparatus ("BESTEM D02" manufactured by Canon Machinery), the silicon chip with the cured die bonding film obtained above is attached to the transparent glass substrate after singulation obtained above. was die-bonded to At this time, by bringing the cured die bonding film into contact with the transparent glass substrate after singulation under a temperature condition of 20 ° C., the silicon chip with the cured die bonding film is arranged on this substrate, and one The die bonding was performed by applying a force of 5 N for 0.5 seconds to the silicon chip with the cured die bonding film.

Then, using an optical microscope (“VHX-1000” manufactured by Keyence Corporation), the transparent glass substrate after die bonding was observed from the side opposite to the cured die bonding film side. Then, the presence or absence of voids (spaces) between the cured die bonding film and the glass substrate is checked, and the cured die bonding film is closely attached to the entire surface of the glass substrate on the cured die bonding film side. The ratio of the surface that is in contact (adhesion ratio, area %) was determined.

The above operation was performed on nine cured silicon chips with die bonding film, and the embedding property of the die bonding film in the substrate was evaluated according to the following criteria. Table 1 shows the results.
A: The adhesion rate was 90 area % or more for all of the 9 silicon chips with the cured die bonding film.
B: At least one silicon chip with a cured die bonding film having an adhesion ratio of less than 90 area % was present.

<Evaluation of Transferability to Semiconductor Chip>
(Production of laminate (3))
A laminate (3) was produced in the same manner as in the production of the semiconductor chip with the cured die bonding film described above.

(Evaluation of transferability to semiconductor chip)
Next, the laminate (3) obtained above was immersed in pure water at 23° C. for 2 hours. At this time, the laminate (3) was placed so that the entire laminate (3) was submerged in the pure water.
Next, the laminate (3) was pulled out of the pure water to remove water droplets adhering to the surface.
Then, using a pick-up die bonding apparatus ("BESTEM D02" manufactured by Canon Machinery Co., Ltd.), from the base material in the laminate (3) after this immersion, the first layer and the cured second layer were provided on the back surface. An attempt was made to separate and pick up the silicon chip (in other words, the silicon chip with the cured die bonding film).
The order of the steps of dicing, curing of the die bonding film (second layer), and picking up to this point is the same as that of evaluation of embedding property of the die bonding film in the substrate described above.

Then, using an optical microscope ("VHX-1000" manufactured by Keyence Corporation), the surface on which the first layer (die bonding film) of the substrate was laminated (in other words, the first surface) was observed, and according to the following criteria, Transferability of the cured die bonding film to a semiconductor chip was evaluated. Table 1 shows the results.
A: No cured die bonding film remained on the substrate.
B: A cured die bonding film (at least the first layer) remains on the substrate.

<Measurement of non-immersion adhesive strength and post-immersion adhesive strength>
(Manufacturing of test laminate)
From the die bonding film obtained above, the peeling film on the second layer side is removed, and the exposed surface of the newly generated second layer is a mirror surface (back surface) of a 6-inch silicon mirror wafer (thickness 350 μm). affixed to. At this time, the die bonding film was heated to 40° C. and adhered under conditions of a lamination speed of 20 mm/s and a lamination pressure of 0.5 MPa.
Next, the release film on the side of the first layer is removed from the die bonding film after this attachment, and a strong adhesive tape with a width of 25 mm ("PET50PL Shin ”) was attached.

Next, for the die bonding film attached to the 6-inch silicon mirror wafer, along the outer periphery of this strong adhesive tape, the entire thickness direction of the die bonding film (thicknesses of the first layer and the second layer) The die bonding film was cut into strips having a width of 25 mm.
Immediately after the cutting, the die bonding film after cutting was immersed in pure water at 23° C. for 2 hours together with the silicon mirror wafer in a dark place. At this time, the silicon mirror wafer to which the die-bonding film was adhered after cutting was placed in the pure water so that the entire wafer was submerged in the pure water.
Next, the silicon mirror wafer to which the die-bonding film was adhered after cutting was lifted out of the pure water, and water droplets adhering to its surface were removed.
Next, using an ultraviolet irradiation device ("RAD-2000 m/12" manufactured by Lintec Corporation), the cut die bonding film was irradiated with ultraviolet rays under the conditions of an illuminance of 220 mW/cm ² and a light amount of 120 mJ/cm ² . , cured the second layer.
As described above, the strong adhesive tape, the first layer having the notches formed thereon, the cured product of the second layer having the notches formed thereon, and the silicon mirror wafer are laminated in this order in the thickness direction to form a structure. A test laminate was obtained.

(Measurement of adhesive strength after immersion of test laminate)
Using a universal tensile tester ("Autograph AG-IS" manufactured by Shimadzu Corporation) at 23° C., the strong adhesive tape was pulled in the test laminate obtained above. At this time, the strong adhesive tape is pulled at a peeling (pulling) speed of 300 mm / min so that the peeling surfaces generated in the test laminate form an angle of 180 ° by pulling the strong adhesive tape, so-called 180 °. peeled off. Then, the peeling force (load, N/25 mm) at this time was measured, and the peeled portion and the peeling form that occurred in the test laminate were confirmed. The peel force was defined as the adhesive force (N/25 mm) between the cured product of the second layer having a width of 25 mm and the silicon mirror wafer in the test laminate. The results are shown in the column of "adhesive strength after immersion" in Table 1.

(Manufacture of laminate for non-immersion test)
Instead of immersing the silicon mirror wafer to which the cut die bonding film was attached in pure water at 23°C in a dark place for 2 hours, it was placed in a dark place in an air atmosphere at a temperature of 23°C and a relative humidity of 50. A non-immersion test laminate was produced in the same manner as for the test laminate described above, except that it was left to stand for 30 minutes under the condition of %.

(Measurement of non-immersion adhesive strength of laminate for non-immersion test)
For the non-immersion test laminate obtained above, the peel force (load, N / 25 mm) is measured in the same manner as for the above test laminate, and the peeling that occurs in the non-immersion test laminate The position and peeling pattern were confirmed, and the peeling force was defined as the adhesive force (N/25 mm) between the cured product of the second layer having a width of 25 mm and the silicon mirror wafer. The results are shown in the column of "non-immersion adhesive strength" in Table 1.

<<Production of die bonding film, production of dicing die bonding sheet, and evaluation of die bonding film>>
[Example 2]
Regarding the first adhesive composition and the second adhesive composition, the types and contents of the ingredients contained in these compositions are as shown in Table 1. A die bonding film and a dicing die bonding sheet were produced in the same manner as in Example 1 except that the amounts were changed, and the die bonding film was evaluated. Table 1 shows the results.

[Comparative Example 1]
<<Production of die bonding film, production of dicing die bonding sheet>>
A die bonding film and a dicing die bonding sheet were produced in the same manner as in Example 1.

<<Evaluation of die bonding film>>
<Calculation of initial detection temperature _T0 of melt viscosity>
The initial detection temperature T ₀ (° C.) was determined in the same manner as in Example 1. Table 2 shows the results.

<Evaluation of embeddability of substrate>
(Production of semiconductor chips with cured die bonding film for comparison)
A laminate (1) was produced in the same manner as in Example 1.

Next, using an ultraviolet irradiation device ("RAD-2000 m/12" manufactured by Lintec Corporation), under the conditions of an illuminance of 220 mW/cm ² and a light intensity of 120 mJ/cm ² , from the outside of the substrate side of the laminate (1), The second layer in the laminate (1) was irradiated with ultraviolet rays to cure the second layer.
As a result, a laminate (4) was obtained in which the first layer, the cured product of the second layer, and the silicon mirror wafer were laminated in this order in the thickness direction. Laminate (4) is the same as laminate (1) except that the second layer is cured.

Next, by dicing using a dicing device (“DFD6361” manufactured by Disco), the silicon mirror wafer in the laminate (4) is divided, and the first layer and the cured second layer (cured die bonding film ) was also cut to obtain a silicon chip with a size of 2 mm×2 mm. At this time, the dicing was performed by cutting the substrate with the dicing blade to a depth of 20 μm from the first layer bonding surface at a moving speed of the dicing blade of 30 mm / sec and a rotational speed of the dicing blade of 40000 rpm. rice field.
As described above, a plurality of laminates in which the cut first layer, the cut second layer cured product, and the silicon chip are laminated in this order in the thickness direction are formed by the first layer as a base. A comparative laminate (3') was obtained which was fixed in alignment on the material. In the laminate (3′) for comparison, the apparent types and lamination order of each layer are the same as in the case of the laminate (3) described above, but the order of dicing and curing of the second layer is , different from the case of laminate (3) described above.

Next, using a pick-up die bonding apparatus ("BESTEM D02" manufactured by Canon Machinery), from the base material in the comparative laminate (3') obtained above, the first layer and the cured The silicon chip with the second layer (cured die-bonding film) (ie, silicon chip with cured die-bonding film for comparison) was pulled apart and picked up.
As described above, a silicon chip with a cured die bonding film for comparison was obtained.

(Evaluation of Embedability of Substrate of Die Bonding Film)
The substrate embedability of the cured die bonding film was evaluated in the same manner as in Example 1, except that the silicon chip with the cured die bonding film obtained above was used for comparison. Table 2 shows the results.

<Evaluation of Transferability to Semiconductor Chip>
(Production of laminate (3′) for comparison)
A laminate (3′) for comparison was produced in the same manner as in the production of the above-described semiconductor chip with a cured die bonding film for comparison.

(Evaluation of transferability to semiconductor chip)
Next, the laminate for comparison (3′) obtained above was immersed in pure water at 23° C. for 2 hours.
At this time, the laminate (3') for comparison was placed so that the entire laminate (3') for comparison was submerged in pure water.
Next, the laminate (3') for comparison was pulled out from the pure water to remove water droplets adhering to the surface. Then, using a pick-up die bonding apparatus ("BESTEM D02" manufactured by Canon Machinery Co., Ltd.), the first layer and the cured second layer were deposited on the back surface from the base material in the comparative laminate (3') after immersion. An attempt was made to pull apart and pick up a silicon chip with layers (in other words, a silicon chip with a cured die bonding film for comparison).
Next, the transferability of the cured die bonding film to the semiconductor chip was evaluated in the same manner as in Example 1, except that the silicon chip with the cured die bonding film for comparison was used. did. Table 2 shows the results.

<Measurement of non-immersion adhesive strength and post-immersion adhesive strength>
(Manufacturing of test laminate)
By the same method as in Example 1, a silicon mirror wafer to which the cut die bonding film was attached was obtained.
Next, using an ultraviolet irradiation device ("RAD-2000 m/12" manufactured by Lintec Corporation), the cut die bonding film was irradiated with ultraviolet rays under the conditions of an illuminance of 220 mW/cm ² and a light amount of 120 mJ/cm ² . , cured the second layer.
Next, in a dark place, the die bonding film after curing the second layer was immersed in pure water at 23° C. for 2 hours together with the silicon mirror wafer immediately after curing the second layer. At this time, the silicon mirror wafer to which the cured die bonding film was attached was placed in the pure water so that the entire wafer was submerged in the pure water.
Next, the silicon mirror wafer to which the cured die bonding film was attached was pulled out from the pure water, and water droplets adhering to its surface were removed.
As described above, the strong adhesive tape, the first layer having the notches formed thereon, the cured product of the second layer having the notches formed thereon, and the silicon mirror wafer are laminated in this order in the thickness direction to form a structure. Also, a test laminate for comparison was obtained.

(Manufacture of laminate for non-immersion test)
Instead of immersing the silicon mirror wafer with the die bonding film after curing the second layer in a dark place in pure water at 23 ° C. for 2 hours, it was placed in a dark place at a temperature of 23 ° C. in an air atmosphere. A non-immersion test laminate for comparison was produced in the same manner as in the case of the above-described comparative test laminate, except that the laminate was left to stand for 30 minutes under conditions of a relative humidity of 50%.

(Measurement of non-immersion adhesive strength and post-immersion adhesive strength of test laminate)
Using the comparative test laminate obtained above, the adhesive strength after immersion was measured in the same manner as in Example 1. In addition, the non-immersion adhesive strength was measured in the same manner as in Example 1 using the comparative non-immersion test laminate obtained above. Table 2 shows the results.

<<Production of die bonding film, production of dicing die bonding sheet, and evaluation of die bonding film>>
[Comparative Example 2]
<<Production of die bonding film, production of dicing die bonding sheet, evaluation of die bonding film>>
Except for using the die bonding film and dicing die bonding sheet produced in the same manner as in Example 2 instead of the die bonding film and dicing die bonding sheet produced in the same manner as in Example 1, comparison The die bonding film was evaluated in the same manner as in Example 1. Table 2 shows the results.

[Comparative Example 3]
<<Production of die bonding film>>
<Production of adhesive composition>
Polymer component (a)-3 (10 parts by mass), polymer component (a)-4 (20 parts by mass), epoxy resin (b1)-2 (20 parts by mass), epoxy resin (b1)-5 (20 parts by mass), thermosetting agent (b2)-2 (20 parts by mass), curing accelerator (c)-2 (0.3 parts by mass), filler (d)-2 (10 parts by mass), coupling agent (e)-4 (0.3 parts by mass), coupling agent (e)-5 (0.5 parts by mass), energy ray-curable resin (g)-1 (5 parts by mass) and photopolymerization initiator ( h)-1 (0.15 parts by mass) was dissolved or dispersed in methyl ethyl ketone and stirred at 23° C. to obtain an adhesive composition having a solid concentration of 55% by mass. In addition, all compounding amounts of components other than methyl ethyl ketone shown here are solid content conversion values.

<Production of die bonding film>
Using a release film (“SP-PET381031H” manufactured by Lintec Co., Ltd., thickness 38 μm) in which one side of a polyethylene terephthalate (PET) film is release-treated by silicone treatment, the adhesion obtained above is applied to the release-treated surface. A die bonding film having a thickness of 20 μm was formed by applying the agent composition and drying by heating at 100° C. for 2 minutes.

<<Manufacture of dicing die bonding sheet>>
By bonding the exposed surface of the die bonding film obtained above to the base material, the base material, the die bonding film and the release film are laminated in this order in the thickness direction. Dicing die bonding got a sheet. The substrate used here is the same as that used in Example 1.

<<Evaluation of die bonding film>>
<Calculation of initial detection temperature _T0 of melt viscosity>
For the die bonding film obtained above, the initial detection temperature T ₀ (° C.) was obtained in the same manner as in Example 1. Table 2 shows the results.

<Evaluation of embeddability of substrate>
(Production of semiconductor chips with cured die bonding film for comparison)
The release film was removed from the dicing die-bonding sheet obtained above, and the exposed surface of the die-bonding film newly produced was adhered to the mirror surface (back surface) of an 8-inch silicon mirror wafer (thickness: 350 μm). At this time, the dicing die-bonding sheet was heated to 40° C. and stuck under conditions of a sticking speed of 20 mm/s and a sticking pressure of 0.5 MPa.
As a result, a laminate (5) was obtained in which the substrate, the die bonding film, and the silicon mirror wafer were laminated in this order in the thickness direction.

Next, by dicing using a dicing machine ("DFD6361" manufactured by Disco), the silicon mirror wafer in the laminate (5) is divided, and the die bonding film is also cut to form a silicon wafer having a size of 2 mm × 2 mm. Got a tip. At this time, the dicing was performed by cutting the substrate with the dicing blade at a moving speed of 30 mm/sec and a rotating speed of 40,000 rpm to a depth of 20 μm from the bonding surface of the die bonding film. rice field.
As described above, the cut die bonding film and the silicon chip are laminated in the thickness direction, and a plurality of laminates are aligned and fixed on the substrate by the die bonding film. A body (6) was obtained.

Next, using an ultraviolet irradiation device ("RAD-2000 m/12" manufactured by Lintec Corporation), under the conditions of an illuminance of 220 mW/cm ² and a light intensity of 120 mJ/cm ² , from the outside of the laminate (6) on the substrate side, The cut die bonding film in the laminate (6) was irradiated with ultraviolet rays to cure the die bonding film.
As described above, the cured product of the cut die bonding film and the silicon chip are fixed in a state in which a plurality of laminates laminated in the thickness direction are aligned on the substrate by the cured product. A laminate (7) was obtained. Laminate (7) is the same as laminate (6) except that the cut die bonding film is cured.

Next, using a pick-up die bonding apparatus (Canon Machinery "BESTEM D02"), from the base material in the laminate (7) obtained above, a silicon chip ( That is, a silicon chip with a cured die bonding film for comparison) was separated and picked up.
As described above, a silicon chip with a cured die bonding film for comparison was obtained.

(Evaluation of Embedability of Substrate of Die Bonding Film)
The substrate embedability of the cured die bonding film was evaluated in the same manner as in Example 1, except that the silicon chip with the cured die bonding film obtained above was used for comparison. Table 2 shows the results.

<Evaluation of Transferability to Semiconductor Chip>
(Production of laminate (7))
A laminated body (7) was produced in the same manner as in the production of the semiconductor chip with the cured die bonding film for comparison.

(Evaluation of transferability to semiconductor chip)
Then, the laminate (7) obtained above was immersed in pure water at 23° C. for 2 hours. At this time, the laminate (7) was placed so that the entire laminate (7) was submerged in the pure water.
Next, the laminate (7) was pulled out of the pure water to remove water droplets adhering to the surface.
Then, using a pick-up die bonding apparatus ("BESTEM D02" manufactured by Canon Machinery), a silicon chip having a cured die bonding film on the back surface (in other words, Then, an attempt was made to separate and pick up a silicon chip with a cured die bonding film for comparison.
Next, the transferability of the cured die bonding film to the semiconductor chip was evaluated in the same manner as in Example 1, except that the silicon chip with the cured die bonding film for comparison was used. did. Table 2 shows the results.

<Measurement of non-immersion adhesive strength and post-immersion adhesive strength>
(Manufacturing of test laminate)
The exposed surface of the die bonding film obtained above was attached to the mirror surface (rear surface) of a 6-inch silicon mirror wafer (thickness: 350 μm). At this time, the die bonding film was heated to 40° C. and adhered under conditions of a lamination speed of 20 mm/s and a lamination pressure of 0.5 MPa.
Next, the release film was removed from the attached die bonding film, and a strong adhesive tape with a width of 25 mm ("PET50PL Shin" manufactured by Lintec) was attached to the newly exposed surface of the die bonding film.

Next, in the die bonding film to which the 6-inch silicon mirror wafer is attached, along the outer periphery of the strong adhesive tape, cuts are formed throughout the thickness direction of the die bonding film, and the die bonding film is removed. It was cut into strips with a width of 25 mm.
Next, in a dark place, the die bonding film after cutting was immersed in pure water at 23° C. for 2 hours together with the silicon mirror wafer immediately after the cutting. At this time, the silicon mirror wafer to which the die-bonding film was adhered after cutting was placed in the pure water so that the entire wafer was submerged in the pure water.
Next, the silicon mirror wafer to which the die-bonding film was adhered after cutting was lifted out of the pure water, and water droplets adhering to its surface were removed.
Next, using an ultraviolet irradiation device ("RAD-2000 m/12" manufactured by Lintec Corporation), the cut die bonding film was irradiated with ultraviolet rays under the conditions of an illuminance of 220 mW/cm ² and a light amount of 120 mJ/cm ² . , cured the die bonding film.
As described above, the strong adhesive tape, the cured product of the die bonding film in which the notch is formed, and the silicon mirror wafer are laminated in this order in the thickness direction to form a comparative test laminate. Obtained.

(Measurement of adhesive strength after immersion of test laminate)
Under the condition of 23° C., the strong adhesive tape was pulled on the test laminate using a universal tensile tester ("Autograph AG-IS" manufactured by Shimadzu Corporation). At this time, the adhesive tape is pulled at a peeling (pulling) speed of 300 mm / min so that the peeling surfaces generated in the test laminate form an angle of 180 ° by pulling the strong adhesive tape, so-called 180 °. peeled off. Then, the peeling force (load, N/25 mm) at this time was measured, and the peeling location and peeling pattern that occurred in the test laminate were confirmed. The peel force was defined as the adhesive force (N/25 mm) between the cured die bonding film having a width of 25 mm and the silicon mirror wafer in the test laminate. The results are shown in the column of "adhesive strength after immersion" in Table 2.

(Manufacture of laminate for non-immersion test)
Instead of immersing the silicon mirror wafer to which the cut die bonding film was attached in pure water at 23°C in a dark place for 2 hours, it was placed in a dark place in an air atmosphere at a temperature of 23°C and a relative humidity of 50. A non-immersion test laminate for comparison was produced in the same manner as in the case of the above-described comparative test laminate, except that it was left to stand for 30 minutes under the condition of %.

(Measurement of non-immersion adhesive strength of laminate for non-immersion test)
For the non-immersion test laminate obtained above, the peel force (load, N / 25 mm) is measured in the same manner as for the above test laminate, and the peeling that occurs in the non-immersion test laminate The position and peeling pattern were confirmed, and the peeling force was defined as the adhesive force (N/25 mm) between the cured product of the second layer having a width of 25 mm and the silicon mirror wafer. The results are shown in the column of "non-immersion adhesive strength" in Table 2.

[Comparative Example 4]
<<Production of die bonding film>>
<Production of adhesive composition>
Polymer component (a)-3 (10 parts by mass), epoxy resin (b1)-4 (10 parts by mass), epoxy resin (b1)-5 (10 parts by mass), epoxy resin (b1)-6 (20 parts by mass part), thermosetting agent (b2)-3 (1 part by mass), curing accelerator (c)-2 (1 part by mass), filler (d)-2 (50 parts by mass), coupling agent (e) -5 (0.5 parts by mass), cross-linking agent (f)-1 (0.3 parts by mass), energy ray-curable resin (g)-1 (5 parts by mass) and photopolymerization initiator (h)-1 (0.15 parts by mass) was dissolved or dispersed in methyl ethyl ketone and stirred at 23° C. to obtain an adhesive composition having a solid concentration of (55) mass %. In addition, all compounding amounts of components other than methyl ethyl ketone shown here are solid content conversion values.

<Production of die bonding film>
A die bonding film was produced in the same manner as in Comparative Example 3, except that the adhesive composition obtained above was used.

<<Production of dicing die bonding sheet and evaluation of die bonding film>>
A dicing die bonding sheet was produced in the same manner as in Comparative Example 3, except that the die bonding film obtained above was used, and the die bonding film was evaluated. Table 2 shows the results.

As is clear from the above results, in Examples 1 and 2, the initial detection temperature T ₀ of the first layer of the die bonding film is 68 ° C. or less (59 to 68 ° C.), and the first layer is the substrate was excellent in embedding properties.

In Examples 1 and 2, the post-immersion adhesive strength between the cured product of the second layer and the silicon mirror wafer was 10 N/25 mm or more (10 N/25 mm≦). When measuring the adhesive strength after immersion, peeling (interfacial peeling) occurred first between the first layer and the strong adhesive tape in the test laminate, and the peeling force at this time was 10 N/25 mm. Therefore, no separation occurred between the cured product of the second layer and the silicon mirror wafer. In addition, the non-immersion adhesive strength between the cured product of the second layer and the silicon mirror wafer is 10 N / 25 mm or more, similar to the post-immersion adhesive strength, and the test laminate that is not immersed (non-immersed Test laminate), no peeling occurred between the cured product of the second layer and the silicon mirror wafer.
The die bonding film in which the second layer had been cured was excellent in transferability to the semiconductor chip.

As described above, the die bonding films of Examples 1 and 2 have a two-layer structure, so that when picking up a semiconductor chip having a small size, it is possible to suppress poor transfer to the semiconductor chip, and At the time of die bonding, it was possible to embed the substrate satisfactorily.

On the other hand, in Comparative Examples 1 and 2, the adhesion after immersion between the cured product of the second layer and the silicon mirror wafer was 3.0 N/25 mm or less (2.3 to 3.0 N/ 25 mm) was small. At this time, in the test laminate for comparison, peeling (interfacial peeling) occurred between the cured product of the second layer and the silicon mirror wafer. The non-immersion adhesive force between the cured product of the second layer and the silicon mirror wafer was 10 N/25 mm or more, as in Examples 1 and 2.
The die bonding film with the second layer already cured was inferior in transferability to the semiconductor chip.

Comparative Example 1 and Comparative Example 2 used the same die-bonding film and dicing die-bonding sheet as Example 1 and Example 2, respectively. Nevertheless, the reason for such a result is that, at the time of evaluation, the die bonding film after cutting, which is attached to the silicon mirror wafer, was immersed in pure water and cured (the second layer This is because the order of curing) and , is reversed between Examples 1 and 2 and Comparative Examples 1 and 2. In the case of Examples 1 and 2, the cut die bonding film was cured after being immersed in pure water. Considering that dicing using a dicing blade is performed while running water (cutting water), it can be said that the evaluation in Examples 1 and 2 reflects the process order of curing the die bonding film after dicing. . On the other hand, in Comparative Examples 1 and 2, the cut die bonding film was immersed in pure water after curing. That is, it can be said that the evaluation of Comparative Examples 1 and 2 reflects the order of steps in which dicing is performed after the die bonding film is cured. Therefore, the evaluation results of these Examples and Comparative Examples were obtained using the die bonding film of the present invention. By performing the steps in this order, it is possible to manufacture a semiconductor chip while suppressing the transfer failure of the die bonding film to the semiconductor chip when picking up a semiconductor chip having a small size.

In Comparative Example 3, the die bonding film had a single layer structure, and the post-immersion adhesive strength between the cured die bonding film and the silicon mirror wafer was as small as 3.1 N/25 mm. At this time, in the test laminate, peeling (interfacial peeling) occurred between the cured product of the die bonding film and the silicon mirror wafer. The non-immersion adhesive force between the cured product of the die bonding film and the silicon mirror wafer was 10 N/25 mm or more, as in Examples 1 and 2.
The cured product of the die bonding film was inferior in transferability to the semiconductor chip.

On the other hand, in Comparative Example 4, the initial detection temperature T ₀ of the single-layer die bonding film was as high as 83° C., and the die bonding film was inferior in embedding properties in the substrate. On the other hand, the post-immersion adhesion and non-immersion adhesion between the cured product of the die bonding film and the silicon mirror wafer are both 10 N/25 mm or more, as in Examples 1 and 2. there were.

The present invention provides a die bonding film that can suppress defective transfer to a semiconductor chip when picking up a semiconductor chip with a small size and can satisfactorily embed a substrate during die bonding, and this die bonding film. Since a dicing die bonding sheet provided with the dicing die bonding sheet and a method for manufacturing a semiconductor chip using this dicing die bonding sheet can be provided, it is industrially extremely useful.

1A, 1B, 1C, 1D... dicing die bonding sheet,
10... support sheet (dicing sheet),
12... Intermediate layer,
13, 23... die bonding film,
131, 231... first layer,
131'... the cut first layer,
132, 232... second layer,
132'... the cut second layer,
1320' Cut and hardened second layer,
9 ... semiconductor wafer,
9'... a semiconductor chip,
101 Laminate (1-2) (Laminate (1), Laminate (1-1)),
102 Laminate (2),
103 Laminate (3)

Claims (3)

comprising a first layer and a second layer provided on said first layer;
The first layer has a characteristic that the initial detection temperature of the melt viscosity is 75 ° C. or less,
The second layer has adhesiveness and energy ray curability, and the second layer having a thickness of 10 μm and a width of more than 25 mm is used as a test piece, and the test piece is attached to a silicon mirror wafer. Then, the test piece is cut to have a width of 25 mm, the cut test piece is immersed in pure water for 2 hours together with the silicon mirror wafer, and the test piece after immersion is cured with energy rays. Adhesive force between the cured product having a width of 25 mm and the silicon mirror wafer when a laminate for testing in which the cured product is attached to the silicon mirror wafer is produced by using the cured product. has a characteristic of 6 N / 25 mm or more,
die bonding film. A support sheet and the die bonding film according to claim 1 provided on the support sheet,
A dicing die bonding sheet, wherein the first layer in the die bonding film is arranged on the support sheet side. Among the die bonding films according to claim 1, a laminate (1-1) in which a semiconductor wafer is attached to the second layer and a dicing sheet is attached to the first layer, or the laminate according to claim 2 Of the dicing die bonding sheets, producing a laminate (1-2) in which a semiconductor wafer is attached to the second layer in the die bonding film;
By cutting the semiconductor wafer in the laminate (1-1) or the laminate (1-2) together with the die bonding film with a dicing blade, the cut first layer and the cut first layer are obtained. producing a laminate (2) comprising two layers and semiconductor chips which are said cut semiconductor wafers;
A laminated body ( 3) making
In the laminate (3), the semiconductor chip having the cut first layer and the cured product is separated from the dicing sheet or the support sheet and picked up;
A method of manufacturing a semiconductor chip, comprising:

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