TW201900803A - Film adhesive composite sheet and method of manufacturing semiconductor device - Google Patents

Film adhesive composite sheet and method of manufacturing semiconductor device Download PDF

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Publication number
TW201900803A
TW201900803A TW107110052A TW107110052A TW201900803A TW 201900803 A TW201900803 A TW 201900803A TW 107110052 A TW107110052 A TW 107110052A TW 107110052 A TW107110052 A TW 107110052A TW 201900803 A TW201900803 A TW 201900803A
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film
adhesive
shaped adhesive
support sheet
sheet
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TW107110052A
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TWI758445B (en
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佐川雄太
布施啓示
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日商琳得科股份有限公司
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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00Adhesives based on unspecified macromolecular compounds
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22Plastics; Metallised plastics
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52Mounting semiconductor bodies in containers
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/30Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83191Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Adhesive Tapes (AREA)
  • Dicing (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)

Abstract

A film-type adhesive composite sheet which includes a curable film-type adhesive provided on a support sheet, wherein the support sheet includes a substrate, a thickness of the curable film-type adhesive is 1 to 60 [mu]m, and the product of the Young's modulus of the support sheet and the thickness of the support sheet is 4 to 150 Mpa.mm.

Description

膜狀接著劑複合片以及半導體裝置的製造方法    Film-shaped adhesive compound sheet and method for manufacturing semiconductor device   

本發明係關於一種膜狀接著劑複合片以及半導體裝置的製造方法。 The present invention relates to a film-shaped adhesive compound sheet and a method for manufacturing a semiconductor device.

本申請案係基於2017年3月28日於日本提出申請之日本專利特願2017-063654號而主張優先權,將該申請案之內容援用至本文中。 This application claims priority based on Japanese Patent Application No. 2017-063654 filed in Japan on March 28, 2017, and the contents of this application are incorporated herein by reference.

於半導體裝置的製造步驟中,有時使用貼附有用於晶粒接著(die bonding)之膜狀接著劑之半導體晶片。作為獲得此種附有膜狀接著劑之半導體晶片的一個方法,有以下方法:對藉由切割(dicing)半導體晶圓而得之經單片化之複數個半導體晶片貼附膜狀接著劑後,將該膜狀接著劑於與半導體晶片之配置位置對應的位置切斷。該方法中,通常使用在支持片(support sheet)上設置有膜狀接著劑之膜狀接著劑複合片,將膜狀接著劑貼附於複數個半導體晶片。半導體晶片例如係藉由在半導體晶圓形成槽之後,對背面側進 行研磨直至到達該槽為止而製作,但該方法為一例,半導體晶片亦可由其他方法製作。貼附有切斷後之膜狀接著劑之半導體晶片係連同膜狀接著劑一併從支持片分離(拾取),用於晶粒接著。 In the manufacturing process of a semiconductor device, a semiconductor wafer to which a film-shaped adhesive for die bonding is attached is sometimes used. As a method for obtaining such a semiconductor wafer with a film-shaped adhesive, there is a method of applying a film-shaped adhesive to a plurality of singulated semiconductor wafers obtained by dicing a semiconductor wafer. The film-shaped adhesive is cut at a position corresponding to the arrangement position of the semiconductor wafer. In this method, a film-shaped adhesive composite sheet provided with a film-shaped adhesive on a support sheet is generally used, and the film-shaped adhesive is attached to a plurality of semiconductor wafers. The semiconductor wafer is produced, for example, by forming a groove on the semiconductor wafer and polishing the back side until the groove reaches the groove. However, this method is an example, and the semiconductor wafer may be produced by other methods. The semiconductor wafer to which the cut-off film-shaped adhesive is attached is separated (picked) from the support sheet together with the film-shaped adhesive, and is used for die bonding.

上述方法中,作為切斷膜狀接著劑之方法,例如已知對膜狀接著劑照射雷射而切斷之方法或藉由將膜狀接著劑擴張(expand)而切斷之方法。然而,照射雷射之方法存在需要雷射照射裝置並且無法短時間且高效率地切斷之問題點。另外,進行擴張之方法存在需要擴張裝置並且有時切斷面粗糙之問題點。再者,於擴張之情況下,力量僅作用於與膜狀接著劑為同一面之方向,故而有可能膜狀接著劑僅與支持片一併伸長而未被切斷。因此,有時將膜狀接著劑冷卻而使該膜狀接著劑容易被切斷並進行擴張,但該情形時需要冷卻步驟,生產性差。 Among the methods described above, as a method of cutting the film-shaped adhesive, for example, a method of cutting the film-shaped adhesive by irradiating a laser or a method of cutting the film-shaped adhesive by expanding is known. However, the method of irradiating a laser has a problem that a laser irradiating device is required and cannot be cut off in a short time and efficiently. In addition, the method of performing expansion has problems that an expansion device is required and the cut surface is sometimes rough. Furthermore, in the case of expansion, the force acts only in the same direction as the film-shaped adhesive, so it is possible that the film-shaped adhesive extends only with the support sheet without being cut. Therefore, the film-shaped adhesive may be cooled and the film-shaped adhesive may be easily cut and expanded, but in this case, a cooling step is required, and productivity is poor.

作為可解決這些問題點之方法,揭示有以下方法:使用特定的厚度及拉伸斷裂伸長率之膜狀接著劑,於即將拾取半導體晶片前之階段中,將半導體晶片連同該未切斷之膜狀接著劑一併朝拾取方向抬升,利用此時所產生之剪切力將膜狀接著劑切斷(參照專利文獻1)。 As a method to solve these problems, the following method has been disclosed: using a film-shaped adhesive with a specific thickness and tensile elongation at break, in a stage immediately before picking up a semiconductor wafer, the semiconductor wafer together with the uncut film The sheet-shaped adhesive is lifted in the pickup direction together, and the film-shaped adhesive is cut by the shearing force generated at this time (see Patent Document 1).

[先前技術文獻] [Prior technical literature]

[專利文獻] [Patent Literature]

專利文獻1:日本特開2013-179317號公報。 Patent Document 1: Japanese Patent Application Publication No. 2013-179317.

然而,專利文獻1所揭示之方法中,不確定能否抑制步驟異常之產生而將貼附有切斷後之膜狀接著劑之半導體晶片從支持片拾取。 However, in the method disclosed in Patent Document 1, it is uncertain whether it is possible to pick up a semiconductor wafer to which a film-shaped adhesive after the cutting is attached from a support sheet while suppressing the occurrence of a step abnormality.

本發明係鑒於上述情況而成,其課題在於提供一種於支持片上設置有膜狀接著劑之膜狀接著劑複合片以及使用該複合片之半導體裝置的製造方法,上述膜狀接著劑複合片可於製造半導體裝置時,利用經簡化之方法抑制步驟異常之產生而將貼附有膜狀接著劑之半導體晶片從支持片分離。 The present invention has been made in view of the above circumstances, and an object thereof is to provide a film-shaped adhesive composite sheet provided with a film-shaped adhesive on a support sheet and a method for manufacturing a semiconductor device using the composite sheet. When manufacturing a semiconductor device, a simplified method is used to suppress the occurrence of abnormal steps, and the semiconductor wafer to which the film-shaped adhesive is attached is separated from the support sheet.

為了解決上述課題,本發明提供一種膜狀接著劑複合片,係於具有基材之支持片上設置有厚度1μm至60μm之硬化性的膜狀接著劑,前述支持片的楊氏係數(Young’s modulus)A(MPa)及前述支持片的厚度B(mm)之積(A×B)處於4MPa.mm至150MPa.mm之範圍。 In order to solve the above-mentioned problems, the present invention provides a film-like adhesive composite sheet, which is provided on a supporting sheet having a substrate with a hardening film-like adhesive having a thickness of 1 μm to 60 μm. The Young's modulus of the supporting sheet The product (A × B) of A (MPa) and the thickness B (mm) of the aforementioned support sheet is at 4 MPa. mm to 150MPa. The range of mm.

於本發明之膜狀接著劑複合片中,較佳為將硬化前之前述膜狀接著劑以合計厚度成為200μm之方式積層而成 的積層體之斷裂伸長率C為5%至2000%。 In the film-shaped adhesive composite sheet of the present invention, it is preferable that the elongation at break C of the laminate obtained by laminating the film-shaped adhesive before curing to a total thickness of 200 m is 5% to 2000%.

另外,本發明提供一種半導體裝置的製造方法,係使用前述膜狀接著劑複合片,並且具有:將前述膜狀接著劑複合片經由前述膜狀接著劑而貼附於經分割之複數個半導體晶片之步驟;針對貼附於前述半導體晶片之前述膜狀接著劑複合片之支持片,從與設置有前述膜狀接著劑之側為相反之側施力,藉此隔著支持片對膜狀接著劑施力,將膜狀接著劑切斷之步驟;以及將前述半導體晶片及貼附於前述半導體晶片之切斷後之前述膜狀接著劑從前述支持片分離之步驟。 In addition, the present invention provides a method for manufacturing a semiconductor device using the film-shaped adhesive composite sheet, and further comprising attaching the film-shaped adhesive composite sheet to a plurality of divided semiconductor wafers through the film-shaped adhesive. Step: For the support sheet of the film-shaped adhesive composite sheet attached to the semiconductor wafer, apply force from the side opposite to the side where the film-shaped adhesive is provided, thereby bonding the film through the support sheet. A step of cutting the film-shaped adhesive with a force applied to the film; and a step of separating the film-shaped adhesive from the semiconductor wafer and the film-shaped adhesive adhered to the semiconductor wafer from the support sheet.

亦即,本發明包含以下態樣。 That is, the present invention includes the following aspects.

[1]一種膜狀接著劑複合片,係於支持片上設置有硬化性的膜狀接著劑,並且前述支持片具有基材,前述硬化性膜狀接著劑的厚度為1μm至60μm,前述支持片的楊氏係數及前述支持片的厚度之積為4MPa.mm至150MPa.mm。 [1] A film-shaped adhesive compound sheet, which is provided on a support sheet with a hardening film-shaped adhesive, and the support sheet has a base material, the thickness of the hardening film-shaped adhesive is 1 μm to 60 μm, and the support sheet is The product of the Young's coefficient and the thickness of the aforementioned support sheet is 4 MPa. mm to 150MPa. mm.

[2]如[1]所記載之膜狀接著劑複台片,其中前述膜狀接著劑具有以下特性:於將硬化前之前述膜狀接著劑積層而製成合計厚度成為200μm之積層體時,前述積層體之斷裂伸長率成為1%至2000%。 [2] The film-shaped adhesive compound sheet according to [1], wherein the film-shaped adhesive has the following characteristics: when the film-shaped adhesive before curing is laminated to form a laminate having a total thickness of 200 μm; The breaking elongation of the aforementioned laminated body is 1% to 2000%.

[3]一種半導體裝置的製造方法,係使用如[1]所記載之膜狀接著劑複合片,並且包含有:將前述膜狀接著劑複合片經由前述膜狀接著劑而貼附於經分割之複數個半導體晶片;針對貼附於前述半導體晶片之前述膜狀接著劑複合片 中之前述支持片,從與設置有前述膜狀接著劑之側為相反之側隔著前述支持片對前述膜狀接著劑施力,藉此將前述膜狀接著劑切斷;以及將前述半導體晶片及貼附於前述半導體晶片之切斷後之前述膜狀接著劑從前述支持片分離。 [3] A method for manufacturing a semiconductor device, comprising using the film-like adhesive composite sheet according to [1], and including attaching the film-like adhesive composite sheet to a divided sheet via the film-like adhesive. A plurality of semiconductor wafers; with respect to the support sheet in the film-shaped adhesive composite sheet attached to the semiconductor wafer, the film is interposed from the side opposite to the side on which the film-shaped adhesive is provided via the support sheet. A force is applied to the film-shaped adhesive to cut the film-shaped adhesive; and the semiconductor wafer and the film-shaped adhesive after the cutting is attached to the semiconductor wafer are separated from the support sheet.

根據本發明,提供一種於支持片上設置有膜狀接著劑之膜狀接著劑複合片以及使用該複合片之半導體裝置的製造方法,上述膜狀接著劑複合片可於製造半導體裝置時,利用經簡化之方法抑制步驟異常之產生而將貼附有膜狀接著劑之半導體晶片從支持片分離。 According to the present invention, there is provided a film-shaped adhesive composite sheet provided with a film-shaped adhesive on a support sheet and a method for manufacturing a semiconductor device using the composite sheet. The simplified method suppresses the occurrence of step abnormalities and separates the semiconductor wafer to which the film-shaped adhesive is attached from the support sheet.

1、7‧‧‧膜狀接著劑複合片 1, 7‧‧‧ film adhesive compound sheet

9‧‧‧半導體晶片 9‧‧‧ semiconductor wafer

9b‧‧‧半導體晶片之背面 9b‧‧‧ Back of semiconductor wafer

11、71‧‧‧支持片 11, 71‧‧‧ support videos

11a‧‧‧支持片之表面 11a‧‧‧ Support surface

11b‧‧‧支持片之背面 11b‧‧‧ Back of support

12、72‧‧‧膜狀接著劑 12, 72‧‧‧ film adhesive

81‧‧‧上頂部 81‧‧‧Top

82‧‧‧拉升部 82‧‧‧lifting department

121‧‧‧第一區域 121‧‧‧ first zone

122‧‧‧第二區域 122‧‧‧Second Zone

811‧‧‧突起 811‧‧‧ raised

812‧‧‧滑塊 812‧‧‧ slider

812a‧‧‧滑塊之表面 812a‧‧‧Surface of slider

圖1為示意性地表示本發明之半導體裝置的製造方法中的從膜狀接著劑之切斷至半導體晶片從支持片之分離為止的一實施形態的剖視圖。 FIG. 1 is a cross-sectional view schematically showing an embodiment from the cutting of a film-like adhesive to the separation of a semiconductor wafer from a support sheet in a method of manufacturing a semiconductor device according to the present invention.

圖2為用以示意性地說明於本發明之半導體裝置的製造方法中,對膜狀接著劑施力並將該膜狀接著劑切斷的另一實施形態的剖視圖。 2 is a cross-sectional view schematically illustrating another embodiment of a method for manufacturing a semiconductor device according to the present invention, in which a film-shaped adhesive is urged and the film-shaped adhesive is cut.

圖3為示意性地表示使用以往之膜狀接著劑複合片之情形時的半導體裝置的製造過程中的膜狀接著劑複合片及半導體晶片之一態樣的剖視圖。 FIG. 3 is a cross-sectional view schematically showing one aspect of a film-shaped adhesive composite sheet and a semiconductor wafer in a manufacturing process of a semiconductor device when a conventional film-shaped adhesive composite sheet is used.

圖4為示意性地表示使用以往之膜狀接著劑複合片之情形時的半導體裝置的製造過程中的膜狀接著劑複合片及 半導體晶片之另一態樣的剖視圖。 FIG. 4 is a cross-sectional view schematically showing another aspect of the film-shaped adhesive composite sheet and the semiconductor wafer during the manufacturing process of the semiconductor device when a conventional film-shaped adhesive composite sheet is used.

<<膜狀接著劑複合片>> << Film Adhesive Composite Sheet >>

本發明之膜狀接著劑複合片係於具有基材之支持片上設置有厚度1μm至60μm之硬化性的膜狀接著劑,前述支持片的楊氏係數(A)(MPa)及前述支持片的厚度(B)(mm)之積(亦即表示A×B之值)處於4MPa.mm至150MPa.mm之範圍。 The film-shaped adhesive composite sheet of the present invention is a film-shaped adhesive having a thickness of 1 μm to 60 μm provided on a supporting sheet having a substrate. The Young's coefficient (A) (MPa) of the supporting sheet and the The product of thickness (B) (mm) (that is, the value of A × B) is at 4 MPa. mm to 150MPa. The range of mm.

前述膜狀接著劑複合片係於支持片上設置有膜狀接著劑,且於製造半導體裝置時藉由前述膜狀接著劑而貼附於半導體晶片之一個面。於後續步驟中,前述半導體晶片係保持貼附有前述膜狀接著劑之狀態而從前述支持片分離(拾取)。 The film-shaped adhesive composite sheet is provided with a film-shaped adhesive on a support sheet, and is attached to one surface of a semiconductor wafer by the film-shaped adhesive when a semiconductor device is manufactured. In a subsequent step, the semiconductor wafer is separated (picked) from the support sheet while the film-shaped adhesive is attached.

此時,前述膜狀接著劑複合片中,前述支持片的楊氏係數(A)(MPa)及前述支持片的厚度(B)(mm)之積(A×B)處於4MPa.mm至150MPa.mm之範圍,藉此可抑制步驟異常之產生而將貼附有前述膜狀接著劑之半導體晶片從前述支持片分離。 At this time, in the film-shaped adhesive composite sheet, the product (A × B) of the Young's coefficient (A) (MPa) of the support sheet and the thickness (B) (mm) of the support sheet is 4 MPa. mm to 150MPa. The range of mm can suppress the occurrence of step abnormalities and separate the semiconductor wafer to which the film-shaped adhesive is attached from the support sheet.

作為一個態樣,較佳為前述支持片的楊氏係數(A)(MPa)及前述支持片的厚度(B)(mm)之積(A×B)為13.6MPa.mm至112.5MPa.mm。 As one aspect, the product (A × B) of the Young's coefficient (A) (MPa) of the support sheet and the thickness (B) (mm) of the support sheet is preferably 13.6 MPa. mm to 112.5MPa. mm.

更具體而言如以下所述。 More specifically, it is as follows.

首先,藉由進行隔著支持片對膜狀接著劑施力之通常之拾取操作,可將前述膜狀接著劑切斷。亦即,即便不另行設置以膜狀接著劑之切斷為主要目的之步驟,亦可將膜狀接著劑於目標部位於常溫切斷。因此,抑制伴隨著膜狀接著劑未被切斷的半導體晶片之分離(抬升)不良。 First, the film-like adhesive can be cut by performing a normal pick-up operation to apply force to the film-like adhesive through a support sheet. That is, the film-shaped adhesive can be cut at the target portion at room temperature without having to separately provide a step whose main purpose is to cut the film-shaped adhesive. Therefore, it is possible to suppress defective (lifting) of the semiconductor wafer with the film-shaped adhesive not being cut.

另外,抑制以下現象:膜狀接著劑中之與目標半導體晶片對應的部位從支持片剝離,並且膜狀接著劑中之與目標外之半導體晶片對應的部位從支持片剝離。因此,抑制由膜狀接著劑之目標部位未從支持片剝離所致的半導體晶片之分離(抬升)不良,或者不僅目標半導體晶片而且與該目標半導體晶片鄰接的半導體晶片亦同時與膜狀接著劑一併從支持片分離之所謂雙晶粒之產生。 In addition, the phenomenon that the portion corresponding to the target semiconductor wafer in the film-shaped adhesive is peeled from the support sheet, and the portion corresponding to the semiconductor wafer outside the target in the film-shaped adhesive is peeled from the support sheet is suppressed. Therefore, it is possible to suppress poor separation (lifting) of the semiconductor wafer caused by the target portion of the film-shaped adhesive not being peeled from the support sheet, or not only the target semiconductor wafer but also the semiconductor wafer adjacent to the target semiconductor wafer and the film-shaped adhesive The generation of so-called double grains that are separated from the support sheet together.

再者,本說明書中所謂「步驟異常之抑制」係指上述半導體晶片之分離不良及雙晶粒(double die)之產生之抑制等。 In addition, the "suppression of step abnormality" in this specification refers to the above-mentioned failure of the semiconductor wafer and the suppression of the occurrence of double dies.

可認為若前述支持片的楊氏係數(A)(MPa)及前述支持片的厚度(B)(mm)之積(A×B)小於4MPa.mm,則基材大幅度地變形,拾取力未傳遞至膜狀接著劑,膜狀接著劑之切斷變困難。另外可認為,若積(A×B)超過150MPa.mm則基材硬,而將與半導體晶片對應的目標膜狀接著劑之部位之周圍亦抬升,拾取時之力亦未傳遞至膜狀接著劑,膜狀接著劑之切斷變困難。 It can be considered that if the product (A × B) of the Young's coefficient (A) (MPa) of the aforementioned support sheet and the thickness (B) (mm) of the aforementioned support sheet is less than 4 MPa. mm, the substrate is greatly deformed, and the pickup force is not transmitted to the film-shaped adhesive, and cutting of the film-shaped adhesive becomes difficult. In addition, it can be considered that if the product (A × B) exceeds 150 MPa. mm means that the substrate is hard, and the area around the target film-shaped adhesive corresponding to the semiconductor wafer is also lifted, and the force at the time of pickup is not transmitted to the film-shaped adhesive, and cutting of the film-shaped adhesive becomes difficult.

作為一個態樣,若前述支持片的楊氏係數(A)(MPa)及 前述支持片的厚度(B)(mm)之積(A×B)為4MPa.mm至150MPa.mm之範圍內,則基材不會大幅度地變形,拾取力容易傳遞至膜狀接著劑,故而膜狀接著劑之切斷變容易。另外,基材不會變得過硬,可抑制與半導體晶片對應的目標膜狀接著劑之部位之周圍上升,故而拾取時之力容易傳遞至膜狀接著劑,因此膜狀接著劑之切斷變容易。 As one aspect, if the product (A × B) of the Young's coefficient (A) (MPa) of the support sheet and the thickness (B) (mm) of the support sheet is 4 MPa. mm to 150MPa. In the range of mm, the substrate is not greatly deformed, and the pickup force is easily transmitted to the film-shaped adhesive, so cutting of the film-shaped adhesive is easy. In addition, the substrate does not become too hard, and the surrounding area of the target film-shaped adhesive corresponding to the semiconductor wafer can be suppressed from rising. Therefore, the force at the time of picking up is easily transmitted to the film-shaped adhesive. easily.

如此,藉由使用前述膜狀接著劑複合片,可抑制半導體晶片之分離不良及雙晶粒之產生。再者,可省略上述般之以膜狀接著劑之切斷為主目的之步驟,例如對膜狀接著劑照射雷射而切斷之步驟或藉由將膜狀接著劑擴張而切斷之步驟等,可避免因進行這些步驟而產生之問題點,並且可於常溫將膜狀接著劑切斷,亦可減少步驟數,可利用經簡化之方法製造半導體裝置。 In this way, by using the aforementioned film-shaped adhesive compound sheet, it is possible to suppress the occurrence of poor separation of the semiconductor wafer and the occurrence of double crystal grains. In addition, the above-mentioned steps, such as cutting the film-shaped adhesive, may be omitted, such as the step of cutting the film-shaped adhesive by irradiating the film, or the step of cutting by expanding the film-shaped adhesive. The problems caused by performing these steps can be avoided, and the film-like adhesive can be cut off at normal temperature, and the number of steps can be reduced, and a simplified method can be used to manufacture a semiconductor device.

相對於此,上述「日本特開2013-179317號公報」(專利文獻1)中揭示有以下方法:於即將拾取半導體晶片前之階段中,將半導體晶片與未切斷之膜狀接著劑一併朝拾取方向抬升,利用此時所產生之剪切力將膜狀接著劑切斷。然而,該方法中,不確定能否抑制步驟異常之產生而將貼附有切斷後之膜狀接著劑之半導體晶片從支持片拾取。例如,不確定半導體晶片是否保持正常地具備切斷後之膜狀接著劑之狀態而從支持片分離。該文獻之實施例中,具體揭示有於一般之切割片(亦即具有基材及黏著劑層之支持片) 設置膜狀接著劑而成之膜狀接著劑複合片,但關於發揮上述本發明之功效則未作揭示。 In contrast, the above-mentioned "Japanese Patent Application Laid-Open No. 2013-179317" (Patent Document 1) discloses a method of combining a semiconductor wafer with an uncut film-shaped adhesive in a stage immediately before picking up the semiconductor wafer. Lift up in the picking direction, and use the shearing force generated at this time to cut the film adhesive. However, in this method, it is uncertain whether it is possible to suppress the occurrence of step abnormalities and pick up a semiconductor wafer to which a film-shaped adhesive after cutting is attached from a support sheet. For example, it is uncertain whether or not the semiconductor wafer is normally separated from the support sheet in a state of being provided with the film-shaped adhesive after the cutting. The example of this document specifically discloses a film-shaped adhesive composite sheet in which a film-shaped adhesive is provided on a general dicing sheet (that is, a support sheet having a base material and an adhesive layer). The effect is not revealed.

<支持片> <Support film>

前述支持片為具有基材之片,可為僅由基材所構成(亦即僅具有基材)之片,亦可為具有基材及基材以外之其他層之片。作為前述具有其他層之支持片,例如可列舉於基材上具備黏著劑層之片。 The aforementioned support sheet is a sheet having a base material, which may be a sheet composed of only a base material (that is, only a base material), or a sheet having a base material and layers other than the base material. Examples of the support sheet having another layer include a sheet having an adhesive layer on a substrate.

後述膜狀接著劑係設置於支持片上。因此,例如於支持片為於基材上具備黏著劑層之片之情形時,於前述黏著劑層上設置有膜狀接著劑。於支持片為僅由基材所構成之片之情形時,於前述基材上直接接觸而設置有膜狀接著劑。 The film-shaped adhesive agent mentioned later is provided on a support sheet. Therefore, for example, when the support sheet is a sheet having an adhesive layer on a substrate, a film-like adhesive is provided on the adhesive layer. When a support sheet is a sheet | seat comprised only of a base material, a film-shaped adhesive agent is provided in direct contact with the said base material.

支持片的厚度可於充分滿足前述積(A×B)之條件之範圍內根據目的而適當選擇,較佳為20μm至200μm,更佳為25μm至150μm,尤佳為30μm至100μm,極佳為38μm至80μm。 The thickness of the support sheet may be appropriately selected depending on the purpose within a range that satisfies the conditions of the aforementioned product (A × B), preferably 20 μm to 200 μm, more preferably 25 μm to 150 μm, particularly preferably 30 μm to 100 μm, and most preferably 38 μm to 80 μm.

此處,所謂「支持片的厚度」係指支持片總體的厚度,例如所謂由複數層所構成之支持片的厚度係指構成支持片之所有層之合計厚度。再者,作為支持片的厚度之測定方法,例如可列舉:藉由接觸式厚度計於任意5處測定厚度並算出該厚度之測定值之平均值之方法等。 Here, the "thickness of the support sheet" refers to the thickness of the entire support sheet. For example, the thickness of the support sheet composed of a plurality of layers refers to the total thickness of all layers constituting the support sheet. In addition, as a method for measuring the thickness of the support sheet, for example, a method of measuring the thickness at any of five positions by a contact thickness meter and calculating an average value of the measured values of the thickness can be cited.

支持片的楊氏係數可於充分滿足積(A×B)之條件之範圍內根據目的而適當選擇,較佳為50MPa至5000MPa,更佳為100MPa至4000MPa,尤佳為150MPa至3000MPa,極佳為170MPa至2250MPa。 The Young's coefficient of the support sheet can be appropriately selected according to the purpose within a range that fully satisfies the condition of the product (A × B), preferably 50 MPa to 5000 MPa, more preferably 100 MPa to 4000 MPa, and even more preferably 150 MPa to 3000 MPa. It is 170MPa to 2250MPa.

「楊氏係數」為如後述實施例中所記載,使用萬能試驗機,根據JIS(Japanese industrial standard;日本工業標準)K7127:1999於夾具間為100mm、拉伸速度為200mm/min之條件下測定之值。 The "Young's coefficient" is measured under the conditions of 100 mm between fixtures and 200 mm / min using a universal testing machine in accordance with JIS (Japanese industrial standard) K7127: 1999 as described in the examples described later. Value.

作為一個態樣,本發明之支持片較佳為厚度(B)為38μm至80μm,楊氏係數(A)為170MPa至2250MPa,且這些之積(A×B)為13.6MPa.mm至112.5MPa.mm。 As one aspect, the supporting sheet of the present invention preferably has a thickness (B) of 38 μm to 80 μm, a Young's coefficient (A) of 170 MPa to 2250 MPa, and a product of these (A × B) of 13.6 MPa. mm to 112.5MPa. mm.

[基材] [Substrate]

前述基材之構成材料較佳為各種樹脂,具體而言,例如可列舉:聚乙烯(例如低密度聚乙烯(有時簡稱為LDPE)、直鏈低密度聚乙烯(有時簡稱為LLDPE)、高密度聚乙烯(有時簡稱為HDPE等))、聚丙烯、聚丁烯、聚丁二烯、聚甲基戊烯、苯乙烯-乙烯丁烯-苯乙烯嵌段共聚物、聚氯乙烯、氯乙烯共聚物、聚對苯二甲酸乙二酯(有時簡稱為PET)、聚對苯二甲酸丁二酯、聚胺基甲酸酯、聚丙烯酸胺基甲酸酯、聚醯亞胺、乙烯乙酸乙烯酯共聚物、離子聚合物樹脂、乙烯-(甲基)丙烯酸共聚物、乙烯-(甲基)丙烯酸酯共聚物、聚苯乙烯、聚碳酸酯、氟樹脂、這些任一樹脂之氫化物、改性物、交聯物或共聚物等。 The constituent material of the substrate is preferably various resins, and specific examples include polyethylene (for example, low density polyethylene (sometimes referred to as LDPE), linear low density polyethylene (sometimes referred to as LLDPE), High-density polyethylene (sometimes referred to as HDPE, etc.)), polypropylene, polybutene, polybutadiene, polymethylpentene, styrene-ethylene butene-styrene block copolymer, polyvinyl chloride, Vinyl chloride copolymer, polyethylene terephthalate (sometimes referred to as PET), polybutylene terephthalate, polyurethane, polyacrylate urethane, polyimide, Ethylene vinyl acetate copolymer, ionic polymer resin, ethylene- (meth) acrylic copolymer, ethylene- (meth) acrylate copolymer, polystyrene, polycarbonate, fluororesin, hydrogenation of any of these resins Materials, modified products, crosslinked products or copolymers.

再者,於本說明書中,所謂「(甲基)丙烯酸」係設為包含「丙烯酸」及「甲基丙烯酸」兩者之概念。與(甲基)丙烯酸類似之用語亦相同,例如所謂「(甲基)丙烯酸酯」為包含「丙烯酸酯」及「甲基丙烯酸酯」兩者之概念,所謂「(甲基)丙烯醯基」為包含「丙烯醯基」及「甲基丙烯醯基」兩者之概念。 In addition, in this specification, a "(meth) acryl" means the concept which includes both "acryl" and "methacryl." The terms similar to (meth) acrylic acid are also the same. For example, the so-called "(meth) acrylate" is a concept including both "acrylate" and "methacrylate", and the so-called "(meth) acryl" The concept includes both "acrylfluorenyl" and "methacrylfluorenyl".

構成基材之樹脂可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些之組合及比率可任意選擇。 The resin constituting the substrate may be only one kind, or two or more kinds. In the case of two or more kinds, the combination and ratio of these may be arbitrarily selected.

基材可由一層(亦即單層)所構成,或亦可由兩層以上之複數層所構成。於基材由複數層所構成之情形時,這些複數層可彼此相同亦可不同。亦即,可所有層相同,或亦可所有層不同,或亦可僅一部分層相同。而且,於複數層互不相同之情形時,只要不損及本發明之功效,則這些複數層之組合並無特別限定。此處,所謂複數層互不相同係指各層之材質及厚度之至少一者互不相同。 The substrate may be composed of one layer (ie, a single layer), or may be composed of two or more layers. When the substrate is composed of a plurality of layers, the plurality of layers may be the same as or different from each other. That is, all layers may be the same, or all layers may be different, or only some of the layers may be the same. Moreover, when the plural layers are different from each other, the combination of the plural layers is not particularly limited as long as the effect of the present invention is not impaired. Here, the plurality of layers being different from each other means that at least one of a material and a thickness of each layer is different from each other.

再者,於本說明書中,不限於基材之情形,所謂「複數層可彼此相同亦可不同」係指「可所有層相同,或亦可所有層不同,或亦可僅一部分層相同」,再者所謂「複數層互不相同」係指「各層之構成材料及厚度之至少一者互不相同」。 Furthermore, in this specification, it is not limited to the case of a base material, so that "a plurality of layers may be the same as or different from each other" means that "all layers may be the same, or all layers may be different, or only a part of the layers may be the same", Furthermore, "the plural layers are different from each other" means "at least one of the constituent materials and thicknesses of each layer is different from each other".

基材的厚度可於充分滿足積(A×B)之條件之範圍內根據目的而適當選擇,較佳為20μm至200μm,更佳為25μm至150μm,尤佳為30μm至100μm,極佳為38μm至80μm。 The thickness of the substrate can be appropriately selected according to the purpose within a range that satisfies the conditions of the product (A × B), preferably 20 μm to 200 μm, more preferably 25 μm to 150 μm, even more preferably 30 μm to 100 μm, and most preferably 38 μm Up to 80 μm.

此處,所謂「基材的厚度」係指基材總體的厚度,例如所謂由複數層所構成之基材的厚度係指構成基材之所有層之合計厚度。再者,作為基材的厚度之測定方法,例如可列舉:使用接觸式厚度計於任意5處測定厚度並算出測定值之平均值之方法等。 Here, the "thickness of the base material" means the thickness of the entire base material. For example, the thickness of the base material composed of a plurality of layers means the total thickness of all the layers constituting the base material. In addition, as a method of measuring the thickness of the base material, for example, a method of measuring the thickness at any five places using a contact thickness meter, and calculating an average value of the measured values.

基材的楊氏係數可於充分滿足積(A×B)之條件之範圍內根據目的而適當選擇,較佳為50MPa至5000MPa,更佳為100MPa至4000MPa,尤佳為150MPa至3000MPa,極佳為170MPa至2250MPa。 The Young's coefficient of the substrate can be appropriately selected according to the purpose within a range that fully satisfies the condition of the product (A × B), preferably 50 MPa to 5000 MPa, more preferably 100 MPa to 4000 MPa, and even more preferably 150 MPa to 3000 MPa. It is 170MPa to 2250MPa.

作為一個態樣,本發明之基材較佳為厚度為38μm至80μm,楊氏係數為170MPa至2250MPa,且這些之積為13.6MPa.mm至112.5MPa.mm。 As one aspect, the substrate of the present invention preferably has a thickness of 38 μm to 80 μm, a Young's coefficient of 170 MPa to 2250 MPa, and a product of these is 13.6 MPa. mm to 112.5MPa. mm.

基材亦可為了提高與設置於該基材上之黏著劑層等其他層之密接性而對表面實施有以下處理:利用噴砂處理、溶劑處理等之凹凸化處理,或電暈放電處理、電子束照射處理、電漿處理、臭氧處理、紫外線照射處理、火焰處理、鉻酸處理、熱風處理等氧化處理等。 The substrate may also be subjected to the following treatments on the surface in order to improve the adhesion with other layers such as an adhesive layer provided on the substrate: a roughening treatment using a sandblasting treatment, a solvent treatment, or the like; or a corona discharge treatment; Beam irradiation treatment, plasma treatment, ozone treatment, ultraviolet irradiation treatment, flame treatment, chromic acid treatment, hot air treatment and other oxidation treatments.

另外,基材亦可為表面經實施底漆(primer)處理。 In addition, the substrate may be subjected to a primer treatment on the surface.

另外,基材亦可具有抗靜電塗層、於將膜狀接著劑複合片重合保存時防止基材接著於其他片或防止基材接著於吸附台之層等。 In addition, the substrate may have an antistatic coating, a layer that prevents the substrate from adhering to another sheet, or a substrate that is adhering to the adsorption table when the film-like adhesive composite sheet is stacked and stored.

這些中,就抑制因切割半導體晶圓時之刀片摩擦而導致產生基材碎片之方面而言,基材尤佳為表面經實施電子束照射處理。 Among these, in terms of suppressing the occurrence of chipping of the substrate due to blade friction when dicing the semiconductor wafer, the substrate is particularly preferably subjected to an electron beam irradiation treatment on the surface.

[黏著劑層] [Adhesive layer]

前述黏著劑層可適當使用公知者。 The said adhesive layer can use a well-known thing suitably.

黏著劑層可由含有用以構成該黏著劑層之各種成分之黏著劑組成物所形成。黏著劑組成物中之於常溫不氣化之成分彼此之含量之比率通常與黏著劑層之前述成分彼此之含量之比率相同。再者,於本說明書中,所謂「常溫」係指不特別冷或不特別熱之溫度亦即平常之溫度,例如可列舉15℃至25℃之溫度等。 The adhesive layer may be formed of an adhesive composition containing various components for constituting the adhesive layer. The ratio of the content of the components which are not vaporized at ordinary temperature in the adhesive composition to each other is usually the same as the ratio of the content of the aforementioned components to each other in the adhesive layer. In addition, in this specification, "normal temperature" means the temperature which is not particularly cold or particularly hot, that is, ordinary temperature, for example, the temperature of 15 degreeC-25 degreeC, etc. are mentioned.

於前述黏著劑層包含能量線硬化性成分之情形時,藉由照射能量線使該能量線硬化性成分之黏著性降低,半導體晶片之拾取變得更容易。對黏著劑層照射能量線而使黏著性降低之處理可於將膜狀接著劑複合片貼附於被黏附體之後,或亦可於貼附於被黏附體之前預先進行。 In a case where the adhesive layer contains an energy ray-curable component, the energy of the energy ray-curable component is reduced by irradiating the energy ray, and the pickup of the semiconductor wafer becomes easier. The treatment of reducing the adhesiveness by irradiating the adhesive layer with energy rays may be performed after the film-like adhesive compound sheet is attached to the adherend, or may be performed in advance before being attached to the adherend.

於本發明中,所謂「能量線」係指電磁波或帶電粒子束中具有能量量子者,作為該能量線之例,可列舉紫外線 、電子束等。 In the present invention, the "energy line" refers to a person having an energy quantum in an electromagnetic wave or a charged particle beam. Examples of the energy line include ultraviolet rays and electron beams.

紫外線例如可藉由使用高壓水銀燈、融合(fusion)H燈或氙氣燈等作為紫外線源而照射。關於電子束,可照射藉由電子束加速器等所產生者。 The ultraviolet rays can be irradiated, for example, by using a high-pressure mercury lamp, a fusion H lamp, a xenon lamp, or the like as an ultraviolet source. The electron beam can be irradiated by a generator such as an electron beam accelerator.

於本發明中,所謂「能量線硬化性」係指藉由照射能量線而硬化之性質,所謂「非能量線硬化性」係指即便照射能量線亦不硬化之性質。 In the present invention, the "energy ray hardenability" refers to a property that is hardened by irradiating energy rays, and the "non-energy ray hardenability" refers to a property that does not harden even when energy rays are irradiated.

作為前述黏著劑組成物,例如較佳為含有丙烯酸聚合物及能量線聚合性化合物之組成物(黏著劑組成物(i));含有具有羥基且側鏈中具有聚合性基之丙烯酸聚合物(例如具有羥基且經由胺基甲酸酯鍵而於側鏈中具有聚合性基者)以及異氰酸酯系交聯劑之組成物(黏著劑組成物(ii)),更佳為進一步含有溶劑之組成物。 As the adhesive composition, for example, a composition containing an acrylic polymer and an energy ray polymerizable compound (adhesive composition (i)); an acrylic polymer having a hydroxyl group and a polymerizable group in a side chain ( For example, a composition having a hydroxyl group and a polymerizable group in a side chain via a urethane bond) and an isocyanate-based crosslinking agent (adhesive composition (ii)), more preferably a composition further containing a solvent .

除了上述成分以外,前述黏著劑組成物亦可進一步含有光聚合起始劑或著色劑(顏料、染料)、防劣化劑、抗靜電劑、阻燃劑、矽酮(silicone)化合物、鏈轉移劑等各種添加劑之任一種。 In addition to the above components, the adhesive composition may further contain a photopolymerization initiator or a colorant (pigment, dye), an anti-deterioration agent, an antistatic agent, a flame retardant, a silicone compound, and a chain transfer agent. And any of a variety of additives.

前述黏著劑組成物亦可含有用以抑制保存中之非預期之交聯反應之進行的反應延遲劑。作為前述反應延遲劑,例如可列舉:妨礙成為使交聯反應進行之觸媒之成分的作用者。作為較佳者,例如可列舉:藉由對前述觸媒之螯合 而形成螯合錯合物者。作為較佳之反應延遲劑,更具體可列舉分子中具有2個以上之羰基(-C(=O)-)者,作為分子中具有2個羰基者,例如可列舉二羧酸、酮酸、二酮等。 The said adhesive composition may contain the reaction delaying agent which suppresses the progress of an unintended crosslinking reaction during storage. Examples of the reaction delaying agent include those that hinder the function of a component of a catalyst that causes a crosslinking reaction to proceed. Preferred examples include those that form a chelate complex by chelation of the catalyst. As a preferable reaction delaying agent, more specific examples include those having two or more carbonyl groups (-C (= O)-) in the molecule, and those having two carbonyl groups in the molecule include, for example, dicarboxylic acid, keto acid, and dicarboxylic acid. Ketones, etc.

於支持片具有黏著劑層時,黏著劑層的厚度可於充分滿足積(A×B)之條件之範圍內根據目的而適當選擇,較佳為1μm至100μm,更佳為1μm至60μm,尤佳為1μm至30μm。此處所謂「黏著劑層的厚度」係指黏著劑層總體的厚度,例如所謂由複數層所構成之黏著劑層的厚度係指構成黏著劑層之所有層之合計厚度。再者,作為黏著劑層的厚度之測定方法,例如可列舉:使用接觸式厚度計於任意5處測定厚度並算出測定值之平均值之方法等。 When the support sheet has an adhesive layer, the thickness of the adhesive layer can be appropriately selected according to the purpose within a range that fully satisfies the product (A × B), preferably 1 μm to 100 μm, more preferably 1 μm to 60 μm, especially It is preferably 1 μm to 30 μm. The "thickness of the adhesive layer" herein refers to the thickness of the entire adhesive layer. For example, the thickness of the adhesive layer composed of a plurality of layers refers to the total thickness of all the layers constituting the adhesive layer. In addition, as a method for measuring the thickness of the adhesive layer, for example, a method of measuring the thickness at any five places using a contact thickness meter and calculating an average value of the measured values can be cited.

黏著劑組成物係藉由將丙烯酸聚合物等用以構成黏著劑層之各成分調配而獲得,例如可利用除了調配成分不同之方面以外與後述接著劑組成物之情形相同的方法而獲得。 The adhesive composition is obtained by blending the components constituting the adhesive layer, such as an acrylic polymer, and can be obtained, for example, by the same method as in the case of the adhesive composition described later except that the blending components are different.

黏著劑層可藉由在前述基材之表面塗敷黏著劑組成物並加以乾燥而形成。 The adhesive layer can be formed by applying an adhesive composition on the surface of the substrate and drying it.

此時,視需要亦可藉由將所塗敷之黏著劑組成物加熱而進行交聯。加熱條件例如可設為100℃至130℃且1分鐘至5分鐘,但不限定於此。另外,將藉由在剝離膜之剝離處理面塗敷黏著劑組成物並加以乾燥而形成之黏著劑層貼合於 基材之表面,視需要將前述剝離膜去除,藉此亦可於基材上形成黏著劑層。 At this time, if necessary, the applied adhesive composition may be crosslinked by heating. The heating conditions may be, for example, 100 ° C. to 130 ° C. and 1 minute to 5 minutes, but are not limited thereto. In addition, an adhesive layer formed by applying an adhesive composition to the release-treated surface of the release film and drying it is adhered to the surface of the substrate, and if necessary, the aforementioned release film is removed, whereby the substrate can also be applied to the substrate. An adhesive layer is formed thereon.

黏著劑組成物向基材表面或剝離材料之剝離層表面之塗敷只要利用公知之方法進行即可,例如可列舉:使用氣刀塗佈機、刀片塗佈機、棒式塗佈機、凹版塗佈機、輥式塗佈機、輥刀塗佈機、簾幕式塗佈機、模具塗佈機、刮刀塗佈機、絲網塗佈機、邁耶棒(Meyer bar)塗佈機、吻合式塗佈機等各種塗佈機之方法。 The application of the adhesive composition to the substrate surface or the release layer surface of the release material may be performed by a known method, and examples thereof include the use of an air knife coater, a blade coater, a bar coater, and a gravure. Coater, roll coater, roll knife coater, curtain coater, die coater, blade coater, screen coater, Meyer bar coater, Methods of various coaters such as anastomotic coaters.

<膜狀接著劑> <Film Adhesive>

前述膜狀接著劑具有硬化性。前述膜狀接著劑較佳為具有熱硬化性,且較佳為具有感壓接著性。兼具熱硬化性及感壓接著性之膜狀接著劑可藉由在未硬化狀態下輕輕按壓於各種被黏附體而貼附。另外,膜狀接著劑亦可藉由進行加熱加以軟化而可貼附於各種被黏附體。膜狀接著劑藉由硬化而最終成為耐衝擊性高之硬化物,該硬化物即便於嚴酷之高溫、高濕度條件下亦可保持充分之接著特性。 The film-shaped adhesive is hardenable. The film-shaped adhesive preferably has thermosetting properties, and more preferably has pressure-sensitive adhesive properties. A film-shaped adhesive having both thermosetting and pressure-sensitive adhesive properties can be attached by gently pressing on various adherends in an uncured state. In addition, the film-shaped adhesive can be softened by heating and can be attached to various adherends. The film-shaped adhesive is finally hardened to become a hardened product with high impact resistance, and the hardened product can maintain sufficient adhesive properties even under severe high temperature and high humidity conditions.

前述膜狀接著劑的厚度為1μm至60μm,較佳為3μm至25μm,更佳為5μm至15μm。藉由膜狀接著劑的厚度為前述下限值以上,而獲得對被黏附體(亦即半導體晶片)之高接著力。另外,藉由膜狀接著劑的厚度為前述上限值以下,而藉由進行製造半導體裝置時通常進行的隔著支持片 對膜狀接著劑施力之操作,可利用該操作中產生之剪切力將膜狀接著劑容易地切斷,無需另行設置以膜狀接著劑之切斷為主要目的之步驟。 The thickness of the film adhesive is 1 μm to 60 μm, preferably 3 μm to 25 μm, and more preferably 5 μm to 15 μm. When the thickness of the film-shaped adhesive is greater than or equal to the aforementioned lower limit, a high adhesive force to an adherend (ie, a semiconductor wafer) is obtained. In addition, when the thickness of the film-shaped adhesive is equal to or less than the aforementioned upper limit value, and by performing an operation to apply force to the film-shaped adhesive through a support sheet when a semiconductor device is manufactured, the shear generated in this operation can be used. The cutting force easily cuts the film-shaped adhesive, and there is no need to separately provide a step whose main purpose is to cut the film-shaped adhesive.

作為膜狀接著劑的厚度之測定方法,例如可列舉:使用接觸式厚度計於任意5處測定厚度並算出測定值之平均值之方法等。 As a method for measuring the thickness of the film-shaped adhesive, for example, a method of measuring the thickness at any five places using a contact thickness meter and calculating an average value of the measured values can be cited.

於本發明中,將硬化前之前述膜狀接著劑以合計厚度成為200μm之方式積層所得的積層體之斷裂伸長率C例如較佳為5%至2000%,更佳為30%至1200%,再者佳為40%至1100%,尤佳為45%至1050%。藉由斷裂伸長率(C)為前述上限值以下,可於拾取貼附有膜狀接著劑之半導體晶片之前,將膜狀接著劑更容易地切斷。 In the present invention, the elongation at break C of the laminate obtained by laminating the aforementioned film-shaped adhesive before curing such that the total thickness becomes 200 μm is, for example, preferably from 5% to 2000%, more preferably from 30% to 1200%, Furthermore, it is preferably 40% to 1100%, and particularly preferably 45% to 1050%. When the elongation at break (C) is equal to or less than the aforementioned upper limit value, the film-shaped adhesive can be more easily cut before picking up the semiconductor wafer to which the film-shaped adhesive is attached.

亦即,作為一個態樣,本發明之膜狀接著劑複合片中之膜狀接著劑具有以下特性:於將硬化前之前述膜狀接著劑積層而製成合計厚度成為200μm之積層體時,前述積層體之斷裂伸長率(C)成為1%至2000%,較佳為30%至1200%,更佳為40%至1100%,尤佳為45%至1050%。 That is, as one aspect, the film-shaped adhesive in the film-shaped adhesive composite sheet of the present invention has the following characteristics: When the film-shaped adhesive before curing is laminated to form a laminated body having a total thickness of 200 μm, The elongation at break (C) of the aforementioned laminated body is 1% to 2000%, preferably 30% to 1200%, more preferably 40% to 1100%, and even more preferably 45% to 1050%.

作為另一態樣,斷裂伸長率(C)較佳為2000%以下,更佳為1500%以下,尤佳為1000%以下,例如可為30%至1500%、40%至500%及45%至1000%等之任一者。藉由斷裂伸長率(C)為前述上限值以下,可於拾取貼附有膜狀接著劑之半導體晶片之前,將膜狀接著劑以各種方式更容易地切斷。 As another aspect, the elongation at break (C) is preferably 2000% or less, more preferably 1500% or less, and even more preferably 1000% or less. For example, it may be 30% to 1500%, 40% to 500%, and 45%. Up to 1000%. When the elongation at break (C) is equal to or less than the aforementioned upper limit value, the film-shaped adhesive can be more easily cut in various ways before picking up the semiconductor wafer to which the film-shaped adhesive is attached.

亦即,作為膜狀接著劑之切斷方式,不僅可較佳地應用最普通之銷上頂方式,而且亦可較佳地應用滑塊上頂方式等其他方式,膜狀接著劑複合片之通用性變高。 That is, as the cutting method of the film-like adhesive, not only the most common pin-up method, but also other methods such as the slider-up method can be preferably applied. Versatility becomes higher.

於本說明書中,所謂「斷裂伸長率(C)(%)」為將硬化前之前述膜狀接著劑以合計厚度成為200μm之方式積層所得的積層體之斷裂伸長率。 In the present specification, the "elongation at break (C) (%)" refers to the elongation at break of a laminate obtained by laminating the aforementioned film-shaped adhesive before curing so that the total thickness becomes 200 μm.

於本發明中,硬化前之膜狀接著劑或將該硬化前之膜狀接著劑積層所得的整個積層體之斷裂伸長率為依據JIS K7161-1994(ISO(International Organization for Standardization;國際標準化組織)527-1)或JIS K7127:1999(ISO 527-3)所求出之值。於測定對象物(試片)不具有降伏點之情形時可測定拉伸斷裂應變,於具有降伏點之情形可測定拉伸斷裂標稱應變,並使用這些測定值而求出斷裂伸長率。 In the present invention, the elongation at break of the film-shaped adhesive before curing or the entire laminate obtained by laminating the film-shaped adhesive before curing is based on JIS K7161-1994 (ISO (International Organization for Standardization; International Standardization Organization)) 527-1) or JIS K7127: 1999 (ISO 527-3). The tensile fracture strain can be measured when the measurement object (test piece) does not have a drop point, and the nominal strain at break can be measured when there is a drop point, and the elongation at break can be determined using these measured values.

求出斷裂伸長率C之對象之前述積層體為厚度小於200μm之硬化前之膜狀接著劑,較佳為將用以構成本發明之膜狀接著劑複合片的厚度為1μm至60μm之硬化前之膜狀接著劑以合計厚度成為200μm之方式積層2片以上而獲得之積層體。 The laminated body for which the elongation at break C is to be determined is a film-shaped adhesive before hardening having a thickness of less than 200 μm, and preferably a film having a thickness of 1 μm to 60 μm before constituting the film-shaped adhesive composite sheet of the present invention. A laminated body obtained by laminating two or more film adhesives with a total thickness of 200 μm.

斷裂伸長率C係藉由以下方式求出:將前述積層體裁斷成寬度為15mm、長度為100mm、厚度為200μm之試片, 將前述試片以固定部位間之距離(例如藉由萬能試驗機之固定夾具將試片於兩處固定時的前述固定夾具之頂端部間之距離)成為75mm之方式於兩處固定,將拉伸速度設定為200mm/min,於該固定部位間拉伸前述積層體,測定積層體斷裂時之試片之伸長率。 The elongation at break C is obtained by cutting the laminated body into test pieces having a width of 15 mm, a length of 100 mm, and a thickness of 200 μm, and the test pieces are fixed at a distance between parts (for example, by a universal testing machine). The fixing jig fixes the test piece at two places when the distance between the top ends of the aforementioned fixing jigs is 75 mm. Fix it at two places, set the stretching speed to 200 mm / min, and stretch the laminate between the fixed parts. The elongation of the test piece when the laminated body was broken was measured.

再者,於本說明書中,所謂「斷裂伸長率(C)為X%(式中,X為正數)」係指於上述測定方法中拉伸試片(由積層體所製作之試片),於試片在該試片之拉伸方向上相對於原本之長度(未拉伸時之長度)而以X%之長度伸長時,亦即試片之拉伸方向上的總體之長度成為拉伸前之長度之[1+X/100]倍時,試片斷裂。 In addition, in the present specification, the "elongation at break (C) is X% (where X is a positive number)" means a tensile test piece (a test piece made of a laminate) in the above-mentioned measurement method, When the test piece is stretched by X% of its original length (length when not stretched) in the tensile direction of the test piece, that is, the overall length in the tensile direction of the test piece becomes stretched When the previous length is [1 + X / 100] times, the test piece breaks.

於本發明中,將硬化前之前述膜狀接著劑以合計厚度成為200μm之方式積層所得的積層體之斷裂強度(D)較佳為0.1MPa至17MPa,更佳為0.2MPa至15MPa,尤佳為0.4MPa至13MPa。此處所謂積層體係與作為上述斷裂伸長率(C)(%)之測定對象之積層體相同。 In the present invention, the fracture strength (D) of the laminate obtained by laminating the aforementioned film-shaped adhesive before hardening to a total thickness of 200 μm is preferably 0.1 MPa to 17 MPa, more preferably 0.2 MPa to 15 MPa, and particularly preferably It is 0.4MPa to 13MPa. The so-called laminated system is the same as the laminated body that is the measurement target of the elongation at break (C) (%).

斷裂強度D為於測定斷裂伸長率(C)時試片斷裂(被破壞)時之拉伸應力亦即拉伸破壞應力,可與斷裂伸長率(C)同時測定。 The breaking strength D is the tensile stress when the test piece breaks (is broken) when measuring the elongation at break (C), that is, the tensile breaking stress, and can be measured simultaneously with the elongation at break (C).

亦即,作為一個態樣,本發明之膜狀接著劑複合片中之膜狀接著劑具有以下特性:於將硬化前之前述膜狀接著劑積層而製成合計厚度成為200μm之積層體時,前述積層體之斷裂強度(D)成為較佳為0.1MPa至17MPa,更佳為 0.2MPa至15MPa,尤佳為0.4MPa至13MPa。 That is, as one aspect, the film-shaped adhesive in the film-shaped adhesive composite sheet of the present invention has the following characteristics: When the film-shaped adhesive before curing is laminated to form a laminated body having a total thickness of 200 μm, The breaking strength (D) of the aforementioned laminated body is preferably 0.1 MPa to 17 MPa, more preferably 0.2 MPa to 15 MPa, and even more preferably 0.4 MPa to 13 MPa.

硬化前之前述膜狀接著劑對半導體晶圓之接著力(E)較佳為3N/24mm以上,更佳為4N/24mm以上。接著力(E)之上限值例如可設定為15N/24mm、11N/24mm及10N/24mm之任一個,但這些為一例。作為一個態樣,本發明之膜狀接著劑複合片中之膜狀接著劑具有以下特性:將硬化前之前述膜狀接著劑接著於半導體晶圓時之接著力(E)成為較佳為3N/24mm以上15N/24mm以下,更佳為3N/24mm以上11N/24mm以下,尤佳為4N/24mm以上11N/24mm以下,極佳為4N/24mm以上10N/24mm以下。 The adhesive force (E) of the film adhesive to the semiconductor wafer before curing is preferably 3N / 24mm or more, and more preferably 4N / 24mm or more. The upper limit of the force (E) can be set to any of 15N / 24mm, 11N / 24mm, and 10N / 24mm, but these are examples. As one aspect, the film-shaped adhesive in the film-shaped adhesive composite sheet of the present invention has the following characteristics: the adhesive force (E) when the film-shaped adhesive before curing is bonded to a semiconductor wafer is preferably 3N Above / 24mm and below 15N / 24mm, more preferably between 3N / 24mm and 11N / 24mm, particularly preferably between 4N / 24mm and 11N / 24mm, and most preferably between 4N / 24mm and 10N / 24mm.

於本說明書中,硬化前之前述膜狀接著劑對半導體晶圓之接著力E(N/24mm)可利用以下方法來測定。亦即,製作寬度為24mm且長度任意之膜狀接著劑及黏著帶之積層片。該積層片係作為將膜狀接著劑積層於黏著帶之黏著面而成,作為黏著帶係使用Nichiban公司製造之「Cellotape(註冊商標)No.405」之24mm寬度的黏著帶。繼而,藉由經加熱至60℃之膜狀接著劑將該積層片貼附於半導體晶圓,製作依序積層有黏著帶、膜狀接著劑及半導體晶圓之積層體。將製作後之該積層體立即於JIS Z0237 2009所規定之標準環境下放置30分鐘後,進行所謂180°剝離,亦即以膜狀接著劑及半導體晶圓之相互接觸之面彼此成180°之角度之方式將膜狀接著劑及黏著帶之積層片以剝離速度150mm/min 從半導體晶圓分離。測定此時之剝離力,將該測定值作為接著力E(N/24mm)。供測定之前述積層片之長度只要為可穩定地測定剝離力之範圍,則並無特別限定。前述積層片之長度例如較佳為120mm至250mm。 In this specification, the adhesive force E (N / 24mm) of the film adhesive to a semiconductor wafer before curing can be measured by the following method. That is, a laminated sheet with a film-shaped adhesive and an adhesive tape having a width of 24 mm and an arbitrary length was produced. This laminated sheet is formed by laminating a film-shaped adhesive on the adhesive surface of the adhesive tape, and as the adhesive tape is a 24 mm wide adhesive tape of "Cellotape (registered trademark) No. 405" manufactured by Nichiban Corporation. Then, the laminated sheet was attached to a semiconductor wafer by a film-like adhesive heated to 60 ° C., and a laminated body having an adhesive tape, a film-like adhesive, and a semiconductor wafer sequentially laminated was produced. The laminated body was immediately placed in a standard environment specified by JIS Z0237 2009 for 30 minutes, and then the so-called 180 ° peeling was performed, that is, the contact surfaces of the film-shaped adhesive and the semiconductor wafer were 180 ° from each other. The laminated sheet of the film-like adhesive and the adhesive tape was separated from the semiconductor wafer at a peeling speed of 150 mm / min by an angle method. The peel force at this time was measured, and this measured value was made into adhesive force E (N / 24mm). The length of the laminated sheet to be measured is not particularly limited as long as it is a range in which the peel force can be measured stably. The length of the laminated sheet is, for example, preferably 120 mm to 250 mm.

硬化前之前述膜狀接著劑對半導體晶圓之接著力(E)可藉由調節膜狀接著劑之含有成分之種類及量、膜狀接著劑的厚度、構成前述支持片中之設置膜狀接著劑之面的材料、該面之狀態(表面狀態)等而適當調節。 The adhesive force (E) of the film-shaped adhesive to the semiconductor wafer before curing can be adjusted by adjusting the type and amount of the component of the film-shaped adhesive, the thickness of the film-shaped adhesive, and forming the film-like configuration in the support sheet. The material of the surface of the adhesive, the state of the surface (surface state), and the like are appropriately adjusted.

例如,若為膜狀接著劑之含有成分,則藉由調節後述矽烷偶合劑等偶合劑(e)之種類或量,可容易地調節硬化前之前述膜狀接著劑對半導體晶圓之接著力E。 For example, if it is a component of a film-shaped adhesive, by adjusting the type or amount of a coupling agent (e) such as a silane coupling agent described later, the adhesion force of the film-shaped adhesive before curing to a semiconductor wafer can be easily adjusted. E.

另外,例如支持片之前述表面狀態例如可藉由實施以下處理而調節:上文中作為使基材與其他層之密接性提升的處理而列舉之表面處理,亦即,利用噴砂處理、溶劑處理等之凹凸化處理;電暈放電處理、電子束照射處理、電漿處理、臭氧處理、紫外線照射處理、火焰處理、鉻酸處理、熱風處理等氧化處理;底漆處理等。 In addition, for example, the aforementioned surface state of the support sheet can be adjusted by, for example, implementing the following treatments: the surface treatments listed above as the treatments for improving the adhesion between the substrate and other layers, that is, using sandblasting treatment, solvent treatment, etc Corrugation treatment; corona discharge treatment, electron beam irradiation treatment, plasma treatment, ozone treatment, ultraviolet irradiation treatment, flame treatment, chromic acid treatment, hot air treatment and other oxidation treatments; primer treatment and so on.

然而,這些調節方法僅為一例。 However, these adjustment methods are only examples.

膜狀接著劑之前述斷裂伸長率(C)及斷裂強度(D)可藉由調節膜狀接著劑之含有成分之種類及量而適當調節。例如,藉由調整後述聚合物成分(a)之分子量及含量、構成環氧系熱硬化性樹脂(b)之成分之構造、軟化點及含量以及填 充劑(c)之含量等,可容易地調節膜狀接著劑之斷裂伸長率(C)及斷裂強度(D)。 The aforementioned elongation at break (C) and breaking strength (D) of the film-shaped adhesive can be appropriately adjusted by adjusting the kinds and amounts of the components contained in the film-shaped adhesive. For example, it is possible to easily adjust the molecular weight and content of the polymer component (a) described later, the structure, the softening point and content of the components constituting the epoxy-based thermosetting resin (b), and the content of the filler (c). Adjust the elongation at break (C) and the breaking strength (D) of the film adhesive.

然而,這些調節方法僅為一例。 However, these adjustment methods are only examples.

於本發明中,根據前述斷裂伸長率(C)、前述斷裂強度(D)及前述接著力(E)所求出之E/(C×D)之值較佳為0.0005以上,更佳為0.0006以上,尤佳為0.0007以上。E/(C×D)之上限值並無特別限定,例如可取0.80以下、0.50以下及0.10以下之任一個,但這些為一例。 In the present invention, the value of E / (C × D) determined based on the elongation at break (C), the breaking strength (D), and the adhesive force (E) is preferably 0.0005 or more, and more preferably 0.0006. Above, particularly preferably, it is 0.0007 or more. The upper limit of E / (C × D) is not particularly limited, and may be any one of 0.80 or less, 0.50 or less, and 0.10 or less, but these are examples.

作為一個態樣,本發明之膜狀接著劑複合片中之膜狀接著劑具有以下特性:由前述斷裂伸長率(C)、前述斷裂強度(D)及前述接著力(E)所求出之E/(C×D)之值成為較佳為0.0005以上0.80以下,更佳為0.0006以上0.50以下,尤佳為0.0007以上0.10以下。 As one aspect, the film-shaped adhesive in the film-shaped adhesive composite sheet of the present invention has the following characteristics: determined from the elongation at break (C), the strength at break (D), and the adhesion (E). The value of E / (C × D) is preferably 0.0005 or more and 0.80 or less, more preferably 0.0006 or more and 0.50 or less, and even more preferably 0.0007 or more and 0.10 or less.

[接著劑組成物] [Adhesive composition]

膜狀接著劑可由含有該膜狀接著劑之構成材料之接著劑組成物所形成。例如,於膜狀接著劑之形成對象面塗敷接著劑組成物,視需要加以乾燥,藉此可於目標部位形成膜狀接著劑。接著劑組成物中之於常溫下不氣化之成分彼此之含量之比率通常與膜狀接著劑之前述成分彼此之含量之比率相同。此處,所謂「常溫」如上文中所說明。 The film-shaped adhesive can be formed from an adhesive composition containing the material constituting the film-shaped adhesive. For example, a film-shaped adhesive can be formed on a target part by applying an adhesive composition on the surface to be formed of the film-shaped adhesive and drying it if necessary. The ratio of the content of the components which are not vaporized at ordinary temperature in the adhesive composition is usually the same as the ratio of the content of the aforementioned components in the film-shaped adhesive. Here, the "normal temperature" is as described above.

接著劑組成物之塗敷只要利用公知之方法進行即可, 例如可列舉:使用氣刀塗佈機、刀片塗佈機、棒式塗佈機、凹版塗佈機、輥式塗佈機、輥刀塗佈機、簾幕式塗佈機、模具塗佈機、刮刀塗佈機、絲網塗佈機、邁耶棒塗佈機、吻合式塗佈機等各種塗佈機之方法。 The application of the adhesive composition may be performed by a known method, and examples thereof include an air knife coater, a blade coater, a bar coater, a gravure coater, a roll coater, and a roll. Knife coater, curtain coater, mold coater, blade coater, screen coater, Meyer bar coater, anastomotic coater and other coaters.

接著劑組成物之乾燥條件並無特別限定,於接著劑組成物含有後述溶劑之情形時,較佳為進行加熱乾燥,於該情形時,例如較佳為於70℃至130℃且10秒鐘至5分鐘之條件下乾燥。 The drying conditions of the adhesive composition are not particularly limited. When the adhesive composition contains a solvent to be described later, it is preferable to perform drying by heating. In this case, for example, it is preferably 70 ° C to 130 ° C for 10 seconds. Dry to 5 minutes.

作為較佳之接著劑組成物,例如可列舉含有聚合物成分(a)及環氧系熱硬化性樹脂(b)之組成物。以下,對各成分加以說明。 As a preferable adhesive composition, the composition containing a polymer component (a) and an epoxy-type thermosetting resin (b) is mentioned, for example. Hereinafter, each component is demonstrated.

(聚合物成分(a)) (Polymer component (a))

聚合物成分(a)為被視為聚合性化合物發生聚合反應而形成之成分,為用以對膜狀接著劑賦予造膜性或可撓性等,並且使對半導體晶片等接著對象之接著性(貼附性)提升的聚合物化合物。另外,聚合物成分(a)亦為不相當於後述環氧樹脂(b1)及熱硬化劑(b2)之成分。 The polymer component (a) is a component which is considered to be formed by a polymerization reaction of a polymerizable compound. The polymer component (a) is used to impart film-forming property, flexibility, and the like to a film-like adhesive, and to adhere to a semiconductor wafer or the like (Adhesiveness) Improved polymer compound. The polymer component (a) is also a component that does not correspond to the epoxy resin (b1) and the thermosetting agent (b2) described later.

聚合物成分(a)可單獨使用一種,亦可併用兩種以上,於併用兩種以上之情形時,這些之組合及比率可任意選擇。 The polymer component (a) may be used singly or in combination of two or more kinds. When two or more kinds of polymer components are used in combination, the combination and ratio of these may be arbitrarily selected.

作為聚合物成分(a),例如可列舉:丙烯酸系樹脂(例如具有(甲基)丙烯醯基之樹脂)、聚酯、胺基甲酸酯系樹脂(例如具有胺基甲酸酯鍵之樹脂)、丙烯酸胺基甲酸酯樹脂、矽酮系樹脂(例如具有矽氧烷鍵之樹脂)、橡膠系樹脂(例如具有橡膠構造之樹脂)、苯氧基樹脂、熱硬化性聚醯亞胺等,較佳為丙烯酸系樹脂。 Examples of the polymer component (a) include an acrylic resin (for example, a resin having a (meth) acryl group), a polyester, and a urethane resin (for example, a resin having a urethane bond). ), Acrylic urethane resin, silicone-based resin (for example, resin having a siloxane bond), rubber-based resin (for example, resin having a rubber structure), phenoxy resin, thermosetting polyimide, etc. Is preferably an acrylic resin.

作為聚合物成分(a)中之前述丙烯酸系樹脂,可列舉公知之丙烯酸聚合物。 Examples of the acrylic resin in the polymer component (a) include known acrylic polymers.

丙烯酸系樹脂之重量平均分子量(Mw)較佳為10000至2000000,更佳為100000至1500000。藉由丙烯酸系樹脂之重量平均分子量為此種範圍內,容易將硬化前之前述膜狀接著劑對半導體晶圓之接著力E調節至上述範圍內。 The weight average molecular weight (Mw) of the acrylic resin is preferably 10,000 to 2,000,000, and more preferably 100,000 to 1,500,000. When the weight average molecular weight of the acrylic resin is within such a range, it is easy to adjust the adhesion force E of the film-like adhesive before curing to the semiconductor wafer within the above range.

另一方面,藉由丙烯酸系樹脂之重量平均分子量為前述下限值以上,膜狀接著劑之形狀穩定性(保管時之經時穩定性)提升。另外,藉由丙烯酸系樹脂之重量平均分子量為前述上限值以下,膜狀接著劑容易追隨被黏附體之凹凸面,而於被黏附體與膜狀接著劑之間進一步抑制空隙等之產生。 On the other hand, when the weight average molecular weight of the acrylic resin is at least the aforementioned lower limit value, the shape stability (stability over time during storage) of the film-shaped adhesive is improved. In addition, since the weight average molecular weight of the acrylic resin is equal to or less than the aforementioned upper limit value, the film-shaped adhesive easily follows the uneven surface of the adherend, and the generation of voids and the like between the adherend and the film-shaped adhesive is further suppressed.

再者,於本說明書中所謂「重量平均分子量」,只要無特別說明,則為藉由凝膠滲透層析(有時簡稱為GPC)法所測定之聚苯乙烯換算值。 In addition, the "weight average molecular weight" in this specification is a polystyrene conversion value measured by the gel permeation chromatography (sometimes abbreviated to GPC) method unless there is particular notice.

丙烯酸系樹脂之玻璃轉移溫度(有時簡稱為Tg)較佳為-60℃至70℃,更佳為-30℃至50℃。藉由丙烯酸系樹脂之Tg為前述下限值以上,而抑制膜狀接著劑與支持片之接著力,於拾取時,具有膜狀接著劑之半導體晶片從支持片之分離變得更容易。另外,藉由丙烯酸系樹脂之Tg為前述上限值以下,膜狀接著劑與半導體晶片之接著力E提升。 The glass transition temperature (sometimes simply referred to as Tg) of the acrylic resin is preferably -60 ° C to 70 ° C, and more preferably -30 ° C to 50 ° C. Since the Tg of the acrylic resin is equal to or more than the aforementioned lower limit value, the adhesion force between the film-shaped adhesive and the support sheet is suppressed, and it becomes easier to separate the semiconductor wafer with the film-shaped adhesive from the support sheet when picking up. In addition, when the Tg of the acrylic resin is equal to or lower than the aforementioned upper limit value, the adhesion E between the film-shaped adhesive and the semiconductor wafer is increased.

作為構成丙烯酸系樹脂之前述(甲基)丙烯酸酯,例如可列舉:(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸第二丁酯、(甲基)丙烯酸第三丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸異辛酯、(甲基)丙烯酸正辛酯、(甲基)丙烯酸正壬酯、(甲基)丙烯酸異壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸十一烷基酯、(甲基)丙烯酸十二烷基酯(亦稱為(甲基)丙烯酸月桂酯)、(甲基)丙烯酸十三烷基酯、(甲基)丙烯酸十四烷基酯(亦稱為(甲基)丙烯酸肉豆蔻酯)、(甲基)丙烯酸十五烷基酯、(甲基)丙烯酸十六烷基酯(亦稱為(甲基)丙烯酸棕櫚酯)、(甲基)丙烯酸十七烷基酯、(甲基)丙烯酸十八烷基酯(亦稱為(甲基)丙烯酸硬脂酯)等構成烷基酯之烷基係碳數為1至18之鏈狀構造的(甲基)丙烯酸烷基酯;(甲基)丙烯酸異酯、(甲基)丙烯酸二環戊酯等(甲基)丙烯酸環烷基酯;(甲基)丙烯酸苄酯等(甲基)丙烯酸芳烷基酯;(甲基)丙烯酸二環戊烯 基酯等(甲基)丙烯酸環烯基酯;(甲基)丙烯酸二環戊烯氧基乙酯等(甲基)丙烯酸環烯氧基烷基酯;(甲基)丙烯醯亞胺;(甲基)丙烯酸縮水甘油酯等含縮水甘油基之(甲基)丙烯酸酯;(甲基)丙烯酸羥基甲酯、(甲基)丙烯酸2-羥基乙酯、(甲基)丙烯酸2-羥基丙酯、(甲基)丙烯酸3-羥基丙酯、(甲基)丙烯酸2-羥基丁酯、(甲基)丙烯酸3-羥基丁酯、(甲基)丙烯酸4-羥基丁酯等含羥基之(甲基)丙烯酸酯;(甲基)丙烯酸N-甲基胺基乙酯等含有經取代之胺基之(甲基)丙烯酸酯等。此處,所謂「經取代之胺基」係指胺基之1個或2個氫原子經氫原子以外之基取代而成之基。 Examples of the (meth) acrylate constituting the acrylic resin include methyl (meth) acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, and isopropyl (meth) acrylate. Ester, n-butyl (meth) acrylate, isobutyl (meth) acrylate, second butyl (meth) acrylate, third butyl (meth) acrylate, amyl (meth) acrylate, (formyl) (Hexyl) hexyl acrylate, heptyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, isooctyl (meth) acrylate, n-octyl (meth) acrylate, n- (meth) acrylate Nonyl ester, isononyl (meth) acrylate, decyl (meth) acrylate, undecyl (meth) acrylate, dodecyl (meth) acrylate (also known as (meth) acrylic acid Lauryl), tridecyl (meth) acrylate, tetradecyl (meth) acrylate (also known as myristyl (meth) acrylate), pentadecyl (meth) acrylate, Hexadecyl (meth) acrylate (also known as palmityl (meth) acrylate), Heptadecyl (meth) acrylate, Stearyl (meth) acrylate (also known as (methyl) Base) stearyl acrylate) Alkyl (meth) acrylic acid alkyl esters having a chain structure of 1 to 18 carbons; Esters, cycloalkyl (meth) acrylates such as dicyclopentyl (meth) acrylate; aralkyl (meth) acrylates such as benzyl (meth) acrylate; dicyclopentenyl (meth) acrylate Cycloalkenyl (meth) acrylate, etc .; Cycloalkenyl (meth) acrylate, etc., such as dicyclopentenyloxyethyl (meth) acrylate; (meth) acrylamidoimine; (Glycidyl) glycidyl acrylate-containing (meth) acrylates; hydroxymethyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, 3-hydroxybutyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, etc. ) Acrylate; N-methylaminoethyl (meth) acrylate and the like (meth) acrylate containing a substituted amine group. Here, the "substituted amino group" refers to a group in which one or two hydrogen atoms of an amine group are substituted with a group other than a hydrogen atom.

丙烯酸系樹脂例如亦可為除了前述(甲基)丙烯酸酯以外,選自(甲基)丙烯酸、衣康酸、乙酸乙烯酯、丙烯腈、苯乙烯及N-羥甲基丙烯醯胺等中的一種或兩種以上之單體進行共聚合而成者。 The acrylic resin may be selected from, for example, (meth) acrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene, and N-methyl methacrylamide, in addition to the (meth) acrylate. Copolymerization of one or two or more monomers.

構成丙烯酸系樹脂之單體可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些之組合及比率可任意選擇。 The monomer constituting the acrylic resin may be only one type, or may be two or more types. In the case of two or more types, the combination and ratio of these may be arbitrarily selected.

丙烯酸系樹脂亦可具有乙烯基、(甲基)丙烯醯基、胺基、羥基、羧基、異氰酸酯基等可與其他化合物鍵結之官能基。丙烯酸系樹脂之前述官能基可經由後述交聯劑(f)而與其他化合物鍵結,亦可不經由交聯劑(f)而與其他化合物 直接鍵結。藉由丙烯酸系樹脂利用前述官能基與其他化合物鍵結,有使用膜狀接著劑複合片所得之封裝之可靠性提升的傾向。 The acrylic resin may have a functional group such as a vinyl group, a (meth) acrylfluorenyl group, an amine group, a hydroxyl group, a carboxyl group, or an isocyanate group, which can be bonded to another compound. The functional group of the acrylic resin may be bonded to another compound via a cross-linking agent (f) described later, or may be directly bonded to another compound without passing through the cross-linking agent (f). The acrylic resin uses the aforementioned functional group to bond with other compounds, and thus the reliability of the package obtained by using the film-like adhesive compound sheet tends to be improved.

於本發明中,作為聚合物成分(a),可不使用丙烯酸系樹脂而將丙烯酸系樹脂以外之熱塑性樹脂(以下有時僅簡稱為「熱塑性樹脂」)單獨使用,亦可將熱塑性樹脂與丙烯酸系樹脂併用。藉由使用前述熱塑性樹脂,有時於拾取時,具備膜狀接著劑之半導體晶片從支持片之分離變得更容易,膜狀接著劑容易追隨被黏附體之凹凸面,於被黏附體與膜狀接著劑之間進一步抑制空隙等之產生。 In the present invention, as the polymer component (a), a thermoplastic resin other than an acrylic resin (hereinafter sometimes referred to simply as a "thermoplastic resin") may be used alone without using an acrylic resin, or a thermoplastic resin and an acrylic resin may be used. Use resin together. By using the aforementioned thermoplastic resin, it is sometimes easier to separate a semiconductor wafer provided with a film-like adhesive from a support sheet when picking up, and the film-like adhesive easily follows the uneven surface of the adherend, and adheres to the adherend and the film. Formation of voids and the like between the adhesives is further suppressed.

前述熱塑性樹脂之重量平均分子量較佳為1000至100000,更佳為3000至80000。 The weight average molecular weight of the aforementioned thermoplastic resin is preferably 1,000 to 100,000, and more preferably 3,000 to 80,000.

前述熱塑性樹脂之玻璃轉移溫度(Tg)較佳為-30℃至150℃,更佳為-20℃至120℃。 The glass transition temperature (Tg) of the aforementioned thermoplastic resin is preferably -30 ° C to 150 ° C, and more preferably -20 ° C to 120 ° C.

作為前述熱塑性樹脂,例如可列舉:聚酯、聚胺基甲酸酯、苯氧基樹脂、聚丁烯、聚丁二烯、聚苯乙烯等。 Examples of the thermoplastic resin include polyester, polyurethane, phenoxy resin, polybutene, polybutadiene, and polystyrene.

接著劑組成物及膜狀接著劑所含有之前述熱塑性樹脂可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些之組合及比率可任意選擇。 The thermoplastic resin contained in the adhesive composition and the film-shaped adhesive may be only one kind, or two or more kinds. In the case of two or more kinds, the combination and ratio of these may be arbitrarily selected.

於接著劑組成物中,聚合物成分(a)中之丙烯酸系樹脂相對於溶劑以外之所有成分之總含量(總質量)的含量(亦即聚合物成分(a)中之丙烯酸系樹脂相對於膜狀接著劑之總質量的含量)較佳為5質量%至40質量%,更佳為7質量%至25質量%。 In the adhesive composition, the content of the acrylic resin in the polymer component (a) with respect to the total content (total mass) of all components except the solvent (that is, the acrylic resin in the polymer component (a) with respect to The content of the total mass of the film-shaped adhesive is preferably 5 to 40% by mass, and more preferably 7 to 25% by mass.

於接著劑組成物中,聚合物成分(a)相對於溶劑以外之所有成分之總含量(質量)的含量(亦即聚合物成分(a)相對於膜狀接著劑之總質量的含量)不依賴於聚合物成分(a)之種類,較佳為5質量%至85質量%,更佳為7質量%至80質量%。 In the adhesive composition, the content of the polymer component (a) with respect to the total content (mass) of all components other than the solvent (that is, the content of the polymer component (a) with respect to the total mass of the film-shaped adhesive) does not Depending on the kind of the polymer component (a), it is preferably 5 to 85 mass%, and more preferably 7 to 80 mass%.

藉由使用前述熱塑性樹脂,可獲得上述般之功效,但另一方面,擔心於將硬化前之膜狀接著劑暴露於高溫下時,該膜狀接著劑之硬度降低,未硬化或半硬化之狀態下的膜狀接著劑之打線接合適性降低。因此,接著劑組成物之聚合物成分(a)之含量較佳為考慮此種影響後設定。 By using the aforementioned thermoplastic resin, the above-mentioned effects can be obtained, but on the other hand, when the film-shaped adhesive before curing is exposed to a high temperature, the hardness of the film-shaped adhesive is reduced, and the film is not hardened or semi-hardened. In the state of the film-like adhesive, the wire bonding suitability is reduced. Therefore, the content of the polymer component (a) in the adhesive composition is preferably set in consideration of such effects.

(環氧系熱硬化性樹脂(b)) (Epoxy-based thermosetting resin (b))

環氧系熱硬化性樹脂(b)係由環氧樹脂(b1)及熱硬化劑(b2)所構成。 The epoxy-based thermosetting resin (b) is composed of an epoxy resin (b1) and a thermosetting agent (b2).

接著劑組成物及膜狀接著劑所含有之環氧系熱硬化性樹脂(b)可僅為一種,亦可為兩種以上,於為兩種以上之情 形時,這些之組合及比率可任意選擇。 The epoxy-based thermosetting resin (b) contained in the adhesive composition and the film-shaped adhesive may be only one type, or two or more types. In the case of two or more types, the combination and ratio of these may be arbitrary. select.

.環氧樹脂(b1) . Epoxy resin (b1)

作為環氧樹脂(b1),可列舉公知者,例如可列舉:多官能系環氧樹脂、聯苯化合物、雙酚A二縮水甘油醚及其氫化物、鄰甲酚酚醛清漆環氧樹脂、二環戊二烯型環氧樹脂、聯苯型環氧樹脂、雙酚A型環氧樹脂、雙酚F型環氧樹脂、伸苯基骨架型環氧樹脂等二官能以上之環氧化合物。 Known examples of the epoxy resin (b1) include polyfunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and hydrides thereof, o-cresol novolac epoxy resin, and Difunctional epoxy compounds such as cyclopentadiene epoxy resin, biphenyl epoxy resin, bisphenol A epoxy resin, bisphenol F epoxy resin, and phenylene skeleton epoxy resin.

作為環氧樹脂(b1),亦可使用具有不飽和烴基之環氧樹脂。具有不飽和烴基之環氧樹脂與不具有不飽和烴基之環氧樹脂相比,與丙烯酸系樹脂之相容性較高。因此,藉由使用具有不飽和烴基之環氧樹脂,使用膜狀接著劑複合片所得之封裝之可靠性提升。 As the epoxy resin (b1), an epoxy resin having an unsaturated hydrocarbon group can also be used. The epoxy resin having an unsaturated hydrocarbon group is more compatible with the acrylic resin than the epoxy resin having no unsaturated hydrocarbon group. Therefore, by using an epoxy resin having an unsaturated hydrocarbon group, the reliability of the package obtained by using the film-like adhesive compound sheet is improved.

作為具有不飽和烴基之環氧樹脂,例如可列舉將多官能系環氧樹脂之一部分環氧基變換成具有不飽和烴基之基而成的化合物。此種化合物例如係藉由使(甲基)丙烯酸或其衍生物與環氧基進行加成反應而獲得。再者,於本說明書中所謂「衍生物」,只要無特別說明係指原本之化合物之至少一個基經除此以外之基(取代基)取代而成的化合物。此處所謂「基」不僅係指複數個原子鍵結而成之原子團,亦包含一個原子。 Examples of the epoxy resin having an unsaturated hydrocarbon group include compounds obtained by converting a part of epoxy groups of a polyfunctional epoxy resin into a group having an unsaturated hydrocarbon group. Such a compound is obtained, for example, by subjecting (meth) acrylic acid or a derivative thereof to an addition reaction with an epoxy group. The term "derivative" in this specification means a compound in which at least one group of the original compound is substituted with another group (substituent group) unless otherwise specified. The so-called "base" here refers not only to a group of atoms bonded by a plurality of atoms, but also to one atom.

另外,作為具有不飽和烴基之環氧樹脂,例如可列舉:具有不飽和烴基之基直接鍵結於構成環氧樹脂之芳香環等的化合物等。 Examples of the epoxy resin having an unsaturated hydrocarbon group include compounds in which a group having an unsaturated hydrocarbon group is directly bonded to an aromatic ring constituting the epoxy resin.

不飽和烴基為具有聚合性之不飽和基,作為該不飽和烴基之具體例,可列舉:乙烯基(ethenyl)(亦稱為乙烯基(vinyl))、2-丙烯基(亦稱為烯丙基)、(甲基)丙烯醯基、(甲基)丙烯醯胺基等,較佳為丙烯醯基。 The unsaturated hydrocarbon group is a polymerizable unsaturated group. Specific examples of the unsaturated hydrocarbon group include ethylene (ethenyl) (also known as vinyl) and 2-propenyl (also known as allyl). Group), (meth) acrylfluorenyl group, (meth) acrylfluorenylamino group, etc., and preferably acrylfluorenyl group.

環氧樹脂(b1)之重量平均分子量並無特別限定,就膜狀接著劑之硬化性以及硬化後之膜狀接著劑之強度及耐熱性之方面而言,較佳為300至30000。 The weight average molecular weight of the epoxy resin (b1) is not particularly limited, and it is preferably from 300 to 30,000 in terms of the curability of the film-like adhesive and the strength and heat resistance of the film-like adhesive after curing.

環氧樹脂(b1)之環氧當量較佳為100g/eq至1000g/eq,更佳為150g/eq至800g/eq。 The epoxy equivalent of the epoxy resin (b1) is preferably 100 g / eq to 1000 g / eq, and more preferably 150 g / eq to 800 g / eq.

於本說明書中,所謂「環氧當量」係指包含1克當量之環氧基的環氧化合物之克數(g/eq),可依據JIS K 7236:2001之方法而測定。 In the present specification, the "epoxy equivalent" means the number of grams (g / eq) of an epoxy compound containing 1 gram equivalent of an epoxy group, and can be measured in accordance with the method of JIS K 7236: 2001.

環氧樹脂(b1)可單獨使用一種,亦可併用兩種以上,於併用兩種以上之情形時,這些之組合及比率可任意選擇。 The epoxy resin (b1) may be used singly or in combination of two or more kinds. When two or more kinds of epoxy resins are used in combination, the combination and ratio of these may be arbitrarily selected.

.熱硬化劑(b2) . Heat hardener (b2)

熱硬化劑(b2)作為對環氧樹脂(b1)之硬化劑而發揮功能。 The thermosetting agent (b2) functions as a curing agent for the epoxy resin (b1).

作為熱硬化劑(b2),例如可列舉一分子中具有2個以上之可與環氧基反應之官能基的化合物。作為前述官能基,例如可列舉:酚性羥基、醇性羥基、胺基、羧基、酸基經酐化而成之基等,較佳為酚性羥基、胺基或酸基經酐化而成之基,更佳為酚性羥基或胺基。 Examples of the thermosetting agent (b2) include compounds having two or more functional groups capable of reacting with epoxy groups in one molecule. Examples of the functional group include a phenolic hydroxyl group, an alcoholic hydroxyl group, an amine group, a carboxyl group, and an acid group obtained by anhydriding, and the phenolic hydroxyl group, an amine group, or an acid group is preferably anhydrided. The group is more preferably a phenolic hydroxyl group or an amine group.

熱硬化劑(b2)中,作為具有酚性羥基之酚系硬化劑,例如可列舉:多官能酚樹脂、聯苯酚、酚醛清漆型酚樹脂、二環戊二烯型酚樹脂、聯苯型酚樹脂、芳烷基型酚樹脂等。 Among the thermosetting agents (b2), examples of the phenolic curing agent having a phenolic hydroxyl group include polyfunctional phenol resins, biphenols, novolac-type phenol resins, dicyclopentadiene-type phenol resins, and biphenyl-type phenols. Resin, aralkyl-type phenol resin, etc.

熱硬化劑(B2)中,作為具有胺基之胺系硬化劑,例如可列舉二氰二胺(以下有時簡稱為「DICY」)等。 Among the thermal curing agents (B2), examples of the amine-based curing agent having an amine group include dicyandiamine (hereinafter sometimes referred to simply as "DICY").

熱硬化劑(b2)亦可具有不飽和烴基。 The thermosetting agent (b2) may have an unsaturated hydrocarbon group.

作為具有不飽和烴基之熱硬化劑(b2),例如可列舉:酚樹脂之一部分羥基經具有不飽和烴基之基取代而成的化合物、具有不飽和烴基之基直接鍵結於酚樹脂之芳香環而成的化合物等。 Examples of the thermosetting agent (b2) having an unsaturated hydrocarbon group include compounds in which a part of hydroxyl groups of a phenol resin is substituted with a group having an unsaturated hydrocarbon group, and a group having an unsaturated hydrocarbon group is directly bonded to an aromatic ring of the phenol resin. And other compounds.

熱硬化劑(b2)中之前述不飽和烴基與上述具有不飽和烴基之環氧樹脂中之不飽和烴基相同。 The aforementioned unsaturated hydrocarbon group in the thermosetting agent (b2) is the same as the unsaturated hydrocarbon group in the above-mentioned epoxy resin having an unsaturated hydrocarbon group.

於使用酚系硬化劑作為熱硬化劑(b2)之情形時,就容易將硬化前之前述膜狀接著劑相對於半導體晶圓之接著力E調節至上述範圍內的方面而言,熱硬化劑(b2)較佳為軟化 點或玻璃轉移溫度高。 When a phenol-based hardener is used as the thermal hardener (b2), the thermal hardener is in terms of easily adjusting the adhesive force E of the film adhesive before curing to the semiconductor wafer within the above range. (b2) The softening point or the glass transition temperature is preferably high.

熱硬化劑(b2)之重量平均分子量例如較佳為60至30000。 The weight-average molecular weight of the thermosetting agent (b2) is preferably 60 to 30,000, for example.

熱硬化劑(b2)可單獨使用一種,亦可併用兩種以上,於併用兩種以上之情形時,這些之組合及比率可任意選擇。 The thermosetting agent (b2) may be used singly, or two or more kinds may be used in combination. When two or more kinds are used in combination, the combination and ratio of these may be arbitrarily selected.

於接著劑組成物及膜狀接著劑中,相對於環氧樹脂(b1)之含量100質量份,熱硬化劑(b2)之含量較佳為0.1質量份至500質量份,更佳為1質量份至200質量份。藉由熱硬化劑(b2)之前述含量為前述下限值以上,膜狀接著劑之硬化更容易進行。另外,藉由熱硬化劑(b2)之前述含量為前述上限值以下,而減少膜狀接著劑之吸濕率,使用膜狀接著劑複合片所得之封裝之可靠性進一步提升。 In the adhesive composition and the film-shaped adhesive, the content of the thermosetting agent (b2) is preferably 0.1 to 500 parts by mass, and more preferably 1 part by mass based on 100 parts by mass of the content of the epoxy resin (b1). Parts to 200 parts by mass. When the aforementioned content of the thermosetting agent (b2) is equal to or more than the aforementioned lower limit value, the curing of the film-shaped adhesive is more easily performed. In addition, since the content of the thermosetting agent (b2) is equal to or less than the aforementioned upper limit value, the moisture absorption of the film-shaped adhesive is reduced, and the reliability of the package obtained by using the film-shaped adhesive composite sheet is further improved.

於接著劑組成物及膜狀接著劑中,相對於聚合物成分(a)之含量100質量份,環氧系熱硬化性樹脂(b)之含量(亦即環氧樹脂(b1)及熱硬化劑(b2)之合計含量)較佳為50質量份至1000質量份,更佳為100質量份至900質量份,尤佳為150質量份至870質量份。藉由環氧系熱硬化性樹脂(b)之前述含量為此種範圍,於拾取時,具備膜狀接著劑之半導體晶片從支持片之分離變得更容易。 In the adhesive composition and the film-like adhesive, the content of the epoxy-based thermosetting resin (b) (that is, the epoxy resin (b1) and the thermosetting) with respect to 100 parts by mass of the content of the polymer component (a) The total content of the agent (b2)) is preferably 50 parts by mass to 1,000 parts by mass, more preferably 100 parts by mass to 900 parts by mass, and even more preferably 150 parts by mass to 870 parts by mass. When the aforementioned content of the epoxy-based thermosetting resin (b) is in such a range, it is easier to separate the semiconductor wafer provided with the film-shaped adhesive from the support sheet at the time of pickup.

作為一個態樣,相對於接著劑組成物及膜狀接著劑之總質量,環氧系熱硬化性樹脂(b)之含量較佳為20質量%至80質量%。 In one aspect, the content of the epoxy-based thermosetting resin (b) is preferably 20% by mass to 80% by mass based on the total mass of the adhesive composition and the film-like adhesive.

前述膜狀接著劑亦可為了改良該膜狀接著劑之各種物性,而除了聚合物成分(a)及環氧系熱硬化性樹脂(b)以外,再者視需要含有不相當於這些之其他成分。 In order to improve various physical properties of the film-shaped adhesive, the film-shaped adhesive may contain, in addition to the polymer component (a) and the epoxy-based thermosetting resin (b), other components that do not correspond to these. ingredient.

作為前述膜狀接著劑所含有之其他成分中較佳者,例如可列舉:硬化促進劑(c)、填充材料(d)、偶合劑(e)、交聯劑(f)、能量線硬化性樹脂(g)、光聚合起始劑(h)、通用添加劑(i)等。 Among the other components contained in the film-like adhesive, preferable ones include, for example, a hardening accelerator (c), a filler (d), a coupling agent (e), a cross-linking agent (f), and energy ray hardenability. Resin (g), photopolymerization initiator (h), general additive (i), and the like.

亦即,作為一個態樣,本發明之膜狀接著劑複合片之膜狀接著劑含有:聚合物成分(a);環氧系熱硬化性樹脂(b);以及選自由硬化促進劑(c)、填充材料(d)、偶合劑(e)、交聯劑(f)、能量線硬化性樹脂(g)、光聚合起始劑(h)及通用添加劑(i)所組成之群組中的至少一種成分。 That is, as one aspect, the film-shaped adhesive of the film-shaped adhesive composite sheet of the present invention contains: a polymer component (a); an epoxy-based thermosetting resin (b); and a member selected from a hardening accelerator (c ), Filler (d), coupling agent (e), cross-linking agent (f), energy ray hardening resin (g), photopolymerization initiator (h), and general additive (i) Of at least one ingredient.

(硬化促進劑(c)) (Hardening accelerator (c))

硬化促進劑(c)為用以調節接著劑組成物之硬化速度之成分。 The hardening accelerator (c) is a component for adjusting the hardening speed of the adhesive composition.

作為較佳之硬化促進劑(c),例如可列舉:三乙二胺、苄基二甲基胺、三乙醇胺、二甲基胺基乙醇、三(二甲基胺基甲基)苯酚等三級胺;2-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、2-苯基-4,5-二羥基甲基咪唑、2-苯基-4-甲基 -5-羥基甲基咪唑等咪唑類(例如至少一個氫原子經氫原子以外之基取代的咪唑);三丁基膦、二苯基膦、三苯基膦等有機膦類(例如,至少一個氫原子經有機基取代之膦);四苯基鏻四苯基硼酸鹽、三苯基膦四苯基硼酸鹽等四苯基硼鹽等。 Examples of the preferred hardening accelerator (c) include tertiary grades such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris (dimethylaminomethyl) phenol. Amine; 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl- Imidazoles such as 5-hydroxymethylimidazole (e.g., imidazole having at least one hydrogen atom substituted with a group other than a hydrogen atom); organic phosphines such as tributylphosphine, diphenylphosphine, triphenylphosphine (e.g., at least one hydrogen Phosphine with an atom substituted by an organic group); tetraphenylboronate such as tetraphenylphosphonium tetraphenylborate, triphenylphosphine tetraphenylborate, etc.

接著劑組成物及膜狀接著劑所含有之硬化促進劑(c)可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些之組合及比率可任意選擇。 The hardening accelerator (c) contained in the adhesive composition and the film-shaped adhesive may be only one kind, or two or more kinds. In the case of two or more kinds, the combination and ratio of these may be arbitrarily selected.

於使用硬化促進劑(c)之情形時,於接著劑組成物及膜狀接著劑中,相對於環氧系熱硬化性樹脂(b)之含量100質量份,硬化促進劑(c)之含量較佳為0.01質量份至10質量份,更佳為0.1質量份至5質量份。藉由硬化促進劑(c)之前述含量為前述下限值以上,而更顯著地獲得由使用硬化促進劑(c)所得之功效。另外,藉由硬化促進劑(c)之含量為前述上限值以下,例如抑制高極性之硬化促進劑(c)於高溫、高濕度條件下於膜狀接著劑中移動至與被黏附體之接著界面側而偏析的功效變高,使用膜狀接著劑複合片所得之封裝之可靠性進一步提升。 When the hardening accelerator (c) is used, the content of the hardening accelerator (c) in the adhesive composition and the film-like adhesive is 100 parts by mass with respect to the content of the epoxy-based thermosetting resin (b). It is preferably 0.01 to 10 parts by mass, and more preferably 0.1 to 5 parts by mass. Since the content of the hardening accelerator (c) is equal to or more than the aforementioned lower limit value, the effect obtained by using the hardening accelerator (c) is more significantly obtained. In addition, since the content of the hardening accelerator (c) is equal to or less than the aforementioned upper limit value, for example, the highly polar hardening accelerator (c) is inhibited from moving to the adherend in the film-shaped adhesive under high temperature and high humidity conditions. Then the effect of segregation on the interface side becomes higher, and the reliability of the package obtained by using the film-like adhesive composite sheet is further improved.

(填充材料(d)) (Filling material (d))

膜狀接著劑藉由含有填充材料(d),該膜狀接著劑之熱膨脹係數之調整變容易,藉由相對於膜狀接著劑之貼附對 象物而使該熱膨脹係數最適化,使用膜狀接著劑複合片所得之封裝之可靠性進一步提升。另外,膜狀接著劑藉由含有填充材料(d),亦可降低硬化後之膜狀接著劑之吸濕率,或提升散熱性。 The film-shaped adhesive contains a filler (d), and the adjustment of the thermal expansion coefficient of the film-shaped adhesive is facilitated. The film-shaped adhesive is optimized for the object to be attached to the film-shaped adhesive, and the film-shaped adhesive is used. The reliability of the package obtained by the adhesive compound sheet is further improved. In addition, by including the filler (d) in the film-shaped adhesive, the moisture absorption of the film-shaped adhesive after curing can be reduced, or the heat dissipation can be improved.

填充材料(d)可為有機填充材料及無機填充材料之任一種,較佳為無機填充材料。 The filler (d) may be any of an organic filler and an inorganic filler, and is preferably an inorganic filler.

作為較佳之無機填充材料,例如可列舉:二氧化矽、氧化鋁、滑石、碳酸鈣、鈦白、鐵丹、碳化矽、氮化硼等之粉末;將這些無機填充材料製成球形而成之珠(bead);這些無機填充材料之表面改質品;這些無機填充材料之單晶纖維;玻璃纖維等。 Preferred inorganic fillers include, for example, powders of silicon dioxide, alumina, talc, calcium carbonate, titanium dioxide, iron white, silicon carbide, boron nitride, etc .; these inorganic fillers are made into a spherical shape. Beads; surface modification products of these inorganic fillers; single crystal fibers of these inorganic fillers; glass fibers and the like.

這些中,無機填充材料較佳為二氧化矽或氧化鋁。 Among these, the inorganic filler is preferably silicon dioxide or aluminum oxide.

接著劑組成物及膜狀接著劑所含有之填充材料(d)可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些之組合及比率可任意選擇。 The filler composition (d) contained in the adhesive composition and the film adhesive may be only one type, or two or more types. In the case of two or more types, the combination and ratio of these may be arbitrarily selected.

於使用填充材料(d)之情形時,於接著劑組成物中,填充材料(d)相對於溶劑以外之所有成分之總含量(總質量)的含量(亦即填充材料(d)相對於膜狀接著劑之總質量的含量)較佳為5質量%至80質量%,更佳為7質量%至60質量%。藉由填充材料(d)之含量為此種範圍,上述熱膨脹係數之調整變得更容易。 When the filler (d) is used, the content of the filler (d) in the adhesive composition relative to the total content (total mass) of all components other than the solvent (that is, the filler (d) relative to the film) The content of the total mass of the adhesive agent is preferably 5 to 80% by mass, and more preferably 7 to 60% by mass. When the content of the filler (d) is in such a range, adjustment of the above-mentioned thermal expansion coefficient becomes easier.

(偶合劑(e)) (Coupling agent (e))

膜狀接著劑藉由含有偶合劑(e),對被黏附體之接著性及密接性提升。另外,藉由膜狀接著劑含有偶合劑(e),該膜狀接著劑之硬化物係於不損及耐熱性之情況下耐水性提升。偶合劑(e)具有可與無機化合物或有機化合物反應之官能基。 The film-shaped adhesive contains the coupling agent (e) to improve adhesion and adhesion to the adherend. In addition, when the film-shaped adhesive contains the coupling agent (e), the cured product of the film-shaped adhesive is improved in water resistance without impairing heat resistance. The coupling agent (e) has a functional group capable of reacting with an inorganic compound or an organic compound.

偶合劑(e)較佳為具有可與聚合物成分(a)、環氧系熱硬化性樹脂(b)等所具有之官能基反應的官能基之化合物,更佳為矽烷偶合劑。 The coupling agent (e) is preferably a compound having a functional group capable of reacting with a functional group having a polymer component (a), an epoxy-based thermosetting resin (b), and the like, and more preferably a silane coupling agent.

作為較佳之前述矽烷偶合劑,例如可列舉:3-縮水甘油氧基丙基三甲氧基矽烷、3-縮水甘油氧基丙基甲基二乙氧基矽烷、3-縮水甘油氧基丙基三乙氧基矽烷、3-縮水甘油氧基甲基二乙氧基矽烷、2-(3,4-環氧環己基)乙基三甲氧基矽烷、3-甲基丙烯醯氧基丙基三甲氧基矽烷、3-胺基丙基三甲氧基矽烷、3-(2-胺基乙基胺基)丙基三甲氧基矽烷、3-(2-胺基乙基胺基)丙基甲基二乙氧基矽烷、3-(苯基胺基)丙基三甲氧基矽烷、3-苯胺基丙基三甲氧基矽烷、3-脲基丙基三乙氧基矽烷、3-巰基丙基三甲氧基矽烷、3-巰基丙基甲基二甲氧基矽烷、雙(3-三乙氧基矽烷基丙基)四硫化物、甲基三甲氧基矽烷、甲基三乙氧基矽烷、乙烯基三甲氧基矽烷、乙烯基三乙醯氧基矽烷、咪唑矽烷、含環氧基之寡聚物等。 Examples of the preferable silane coupling agent include 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, and 3-glycidoxypropyltrisilane. Ethoxysilane, 3-glycidyloxymethyldiethoxysilane, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-methacryloxypropyltrimethoxy Silane, 3-aminopropyltrimethoxysilane, 3- (2-aminoethylamino) propyltrimethoxysilane, 3- (2-aminoethylamino) propylmethyldi Ethoxysilane, 3- (phenylamino) propyltrimethoxysilane, 3-anilinepropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, 3-mercaptopropyltrimethoxysilane Silane, 3-mercaptopropylmethyldimethoxysilane, bis (3-triethoxysilylpropyl) tetrasulfide, methyltrimethoxysilane, methyltriethoxysilane, vinyl Trimethoxysilane, vinyltriethoxysilane, imidazolesilane, epoxy-containing oligomers, etc.

接著劑組成物及膜狀接著劑所含有之偶合劑(e)可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些之組合及比率可任意選擇。 The adhesive agent composition and the coupling agent (e) contained in the film-shaped adhesive agent may be only one kind, or two or more kinds. In the case of two or more kinds, the combination and ratio of these may be arbitrarily selected.

於使用偶合劑(e)之情形時,於接著劑組成物及膜狀接著劑中,相對於聚合物成分(a)及環氧系熱硬化性樹脂(b)之合計含量100質量份,偶合劑(e)之含量較佳為0.03質量份至20質量份,更佳為0.05質量份至10質量份,尤佳為0.1質量份至5質量份。 When the coupling agent (e) is used, the content of the polymer component (a) and the epoxy-based thermosetting resin (b) in the adhesive composition and the film-like adhesive is 100 parts by mass. The content of the mixture (e) is preferably 0.03 parts by mass to 20 parts by mass, more preferably 0.05 parts by mass to 10 parts by mass, and even more preferably 0.1 parts by mass to 5 parts by mass.

藉由偶合劑(e)之前述含量為前述下限值以上,而更顯著地獲得填充材料(d)於樹脂中之分散性提升或膜狀接著劑與被黏附體之接著性提升等由使用偶合劑(e)所得之功效。另外,藉由偶合劑(e)之前述含量為前述上限值以下,而進一步抑制逸氣之產生。 As the aforementioned content of the coupling agent (e) is above the aforementioned lower limit, the dispersion of the filler (d) in the resin is improved or the adhesion of the film-like adhesive to the adherend is improved. Effect of coupling agent (e). In addition, by the aforementioned content of the coupling agent (e) being equal to or lower than the aforementioned upper limit value, the generation of outgassing is further suppressed.

(交聯劑(f)) (Crosslinking agent (f))

於使用上述丙烯酸系樹脂等具有可與其他化合物鍵結之乙烯基、(甲基)丙烯醯基、胺基、羥基、羧基、異氰酸酯基等官能基者作為聚合物成分(a)之情形時,接著劑組成物及膜狀接著劑亦可含有用以使前述官能基與其他化合物鍵結而進行交聯之交聯劑(f)。藉由使用交聯劑(f)進行交聯,可調節膜狀接著劑之初期接著力及凝聚力。 In the case of using the acrylic resin and other functional groups having a functional group such as vinyl, (meth) acryl, amine, hydroxyl, carboxyl, and isocyanate groups, which can be bonded to other compounds, as the polymer component (a), The adhesive agent composition and the film-like adhesive agent may contain a crosslinking agent (f) for bonding the functional group to another compound to perform crosslinking. By performing crosslinking using the crosslinking agent (f), the initial adhesive force and cohesive force of the film-like adhesive can be adjusted.

作為交聯劑(f),例如可列舉:有機多元異氰酸酯化合物、有機多元亞胺化台物、金屬螯合系交聯劑(亦即具有金屬螯合構造之交聯劑)、氮丙啶系交聯劑(亦即具有氮丙啶基之交聯劑)等。 Examples of the crosslinking agent (f) include an organic polyisocyanate compound, an organic polyimide compound, a metal chelate-based cross-linking agent (that is, a cross-linking agent having a metal chelate structure), and an aziridine system. Cross-linking agents (that is, cross-linking agents having aziridinyl) and the like.

作為前述有機多元異氰酸酯化合物,例如可列舉:芳香族多元異氰酸酯化合物、脂肪族多元異氰酸酯化合物及脂環族多元異氰酸酯化合物(以下將這些化合物統一而簡稱為「芳香族多元異氰酸酯化合物等」);前述芳香族多元異氰酸酯化合物等之三聚物、異氰脲酸酯體及加合體;使前述芳香族多元異氰酸酯化合物等與多元醇化合物反應所得之末端異氰酸酯胺基甲酸酯預聚物等。前述「加合體」係指前述芳香族多元異氰酸酯化合物、脂肪族多元異氰酸酯化合物或脂環族多元異氰酸酯化合物與乙二醇、丙二醇、新戊二醇、三羥甲基丙烷或蓖麻油等含低分子活性氫之化合物的反應物,作為該反應物之例,可列舉後述般之三羥甲基丙烷之二甲苯二異氰酸酯加成物等。另外,所謂「末端異氰酸酯胺基甲酸酯預聚物」係指具有胺基甲酸酯鍵,並且於分子之末端部具有異氰酸酯基之預聚物。 Examples of the organic polyisocyanate compound include an aromatic polyisocyanate compound, an aliphatic polyisocyanate compound, and an alicyclic polyisocyanate compound (hereinafter, these compounds are collectively referred to simply as "aromatic polyisocyanate compounds"); the aromatic Terpolymers, isocyanurates, and adducts of group polyisocyanate compounds; terminal isocyanate urethane prepolymers and the like obtained by reacting the aforementioned aromatic polyisocyanate compounds and the like with polyol compounds. The aforementioned "adduct" refers to a low-molecular-weight compound such as the aforementioned aromatic polyisocyanate compound, aliphatic polyisocyanate compound, or alicyclic polyisocyanate compound, and ethylene glycol, propylene glycol, neopentyl glycol, trimethylolpropane, or castor oil. Examples of the reactant of the active hydrogen compound include xylene diisocyanate adducts of trimethylolpropane as described below, and the like. The "terminal isocyanate urethane prepolymer" refers to a prepolymer having a urethane bond and having an isocyanate group at the terminal portion of the molecule.

作為前述有機多元異氰酸酯化合物,更具體而言,例如可列舉:2,4-甲苯二異氰酸酯;2,6-甲苯二異氰酸酯;1,3-苯二甲基(xylylene)二異氰酸酯;1,4-二甲苯(xylene)二異氰酸酯;二苯基甲烷-4,4'-二異氰酸酯;二苯基甲烷-2,4'-二異 氰酸酯;3-甲基二苯基甲烷二異氰酸酯;六亞甲基二異氰酸酯;異佛爾酮二異氰酸酯;二環己基甲烷-4,4'-二異氰酸酯;二環己基甲烷-2,4'-二異氰酸酯;甲苯二異氰酸酯、六亞甲基二異氰酸酯及苯二甲基二異氰酸酯之任一種或兩種以上加成於三羥甲基丙烷等多元醇之所有或一部分羥基而成的化合物;離胺酸二異氰酸酯等。 Specific examples of the organic polyisocyanate compound include: 2,4-toluene diisocyanate; 2,6-toluene diisocyanate; 1,3-xylylene diisocyanate; 1,4- Xylene diisocyanate; diphenylmethane-4,4'-diisocyanate; diphenylmethane-2,4'-diisocyanate; 3-methyldiphenylmethane diisocyanate; hexamethylene di Isocyanates; isophorone diisocyanates; dicyclohexylmethane-4,4'-diisocyanate; dicyclohexylmethane-2,4'-diisocyanate; toluene diisocyanate, hexamethylene diisocyanate and xylylene A compound obtained by adding one or two or more diisocyanates to all or part of the hydroxyl groups of a polyhydric alcohol such as trimethylolpropane; a diisocyanate such as an amino acid.

作為前述有機多元亞胺化合物,例如可列舉:N,N'-二苯基甲烷-4,4'-雙(1-氮丙啶羧醯胺)、三羥甲基丙烷-三-β-氮丙啶基丙酸酯、四羥甲基甲烷-三-β-氮丙啶基丙酸酯、N,N'-甲苯-2,4-雙(1-氮丙啶羧醯胺)三乙烯三聚氰胺等。 Examples of the organic polyimide compound include N, N'-diphenylmethane-4,4'-bis (1-aziridinecarboxamide), and trimethylolpropane-tri-β-nitrogen. Propidyl propionate, tetramethylol methane-tri-β-aziridinyl propionate, N, N'-toluene-2,4-bis (1-aziridinecarboxamide) triethylene melamine Wait.

於使用有機多元異氰酸酯化合物作為交聯劑(f)之情形時,作為聚合物成分(a),較佳為使用含羥基之聚合物。於交聯劑(f)具有異氰酸酯基且聚合物成分(a)具有羥基之情形時,可藉由交聯劑(f)與聚合物成分(a)之反應而對膜狀接著劑簡便地導入交聯構造。 When using an organic polyisocyanate compound as a crosslinking agent (f), as a polymer component (a), it is preferable to use a hydroxyl-containing polymer. When the crosslinking agent (f) has an isocyanate group and the polymer component (a) has a hydroxyl group, the film-shaped adhesive can be easily introduced by the reaction of the crosslinking agent (f) and the polymer component (a). Crosslinked structure.

接著劑組成物及膜狀接著劑所含有之交聯劑(f)可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些之組合及比率可任意選擇。 The cross-linking agent (f) contained in the adhesive composition and the film-shaped adhesive may be only one type, or may be two or more types. When there are two or more types, the combination and ratio of these may be arbitrarily selected.

於使用交聯劑(f)之情形時,於接著劑組成物中,相對於聚合物成分(a)之含量100質量份,交聯劑(f)之含量較佳 為0.01質量份至20質量份,更佳為0.1質量份至10質量份,尤佳為0.5質量份至5質量份。藉由交聯劑(f)之前述含量為前述下限值以上,而更顯著地獲得由使用交聯劑(f)所得之功效。另外,藉由交聯劑(f)之前述含量為前述上限值以下,而抑制交聯劑(f)之過剩使用。 When a crosslinking agent (f) is used, the content of the crosslinking agent (f) in the adhesive composition is preferably 0.01 to 20 parts by mass based on 100 parts by mass of the content of the polymer component (a). Parts, more preferably 0.1 parts by mass to 10 parts by mass, and even more preferably 0.5 parts by mass to 5 parts by mass. Since the aforementioned content of the crosslinking agent (f) is above the aforementioned lower limit value, the effect obtained by using the crosslinking agent (f) is more significantly obtained. In addition, an excessive use of the crosslinking agent (f) is suppressed by the content of the crosslinking agent (f) being equal to or less than the aforementioned upper limit value.

(能量線硬化性樹脂(g)) (Energy ray curable resin (g))

膜狀接著劑藉由含有能量線硬化性樹脂(g),可藉由照射能量線而使特性變化。 The film-shaped adhesive contains an energy ray-curable resin (g), and its properties can be changed by irradiating the energy ray.

能量線硬化性樹脂(g)具有藉由照射能量線而進行硬化(聚合)之性質。 The energy ray-curable resin (g) has a property of being cured (polymerized) by irradiating energy rays.

作為前述能量線硬化性化合物,例如可列舉分子內具有至少一個聚合性雙鍵之化合物,較佳為具有(甲基)丙烯醯基之丙烯酸酯系化合物。 Examples of the energy ray-curable compound include a compound having at least one polymerizable double bond in the molecule, and an acrylate compound having a (meth) acrylfluorenyl group is preferable.

作為前述丙烯酸酯系化合物,例如可列舉:三羥甲基丙烷三(甲基)丙烯酸酯、四羥甲基甲烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇單羥基五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯等含鏈狀脂肪族骨架之(甲基)丙烯酸酯;二(甲基)丙烯酸二環戊酯、三環癸烷二羥甲基二丙烯酸酯等含環狀脂肪族骨架之(甲基)丙烯酸酯;聚乙二醇二(甲基)丙烯 酸酯等聚伸烷基二醇(甲基)丙烯酸酯;寡聚酯(甲基)丙烯酸酯;(甲基)丙烯酸胺基甲酸酯寡聚物;環氧改性(甲基)丙烯酸酯;前述聚伸烷基二醇(甲基)丙烯酸酯以外之聚醚(甲基)丙烯酸酯;衣康酸寡聚物等。 Examples of the acrylate compound include trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol tetra (methyl) Acrylate), dipentaerythritol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, 1,6-hexanediol di (Meth) acrylates containing chain aliphatic skeletons such as (meth) acrylates; cyclic aliphatic skeletons containing dicyclopentyl di (meth) acrylate, tricyclodecane dimethylol diacrylate, etc. (Meth) acrylates; polyalkylene glycol (meth) acrylates such as polyethylene glycol di (meth) acrylates; oligopolyester (meth) acrylates; (meth) acrylate amino groups Formate oligomers; epoxy-modified (meth) acrylates; polyether (meth) acrylates other than the aforementioned polyalkylene glycol (meth) acrylates; itaconic acid oligomers; and the like.

能量線硬化性樹脂(g)之重量平均分子量較佳為100至30000。 The weight average molecular weight of the energy ray-curable resin (g) is preferably 100 to 30,000.

接著劑組成物所含有之能量線硬化性樹脂(g)可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些之組合及比率可任意選擇。 The energy ray-curable resin (g) contained in the adhesive composition may be only one kind, or two or more kinds. In the case of two or more kinds, the combination and ratio of these may be arbitrarily selected.

相對於接著劑組成物之總質量,能量線硬化性樹脂(g)之含量較佳為1質量%至95質量%,更佳為3質量%至90質量%,尤佳為5質量%至85質量%。 The content of the energy ray-curable resin (g) is preferably 1% to 95% by mass, more preferably 3% to 90% by mass, and even more preferably 5% to 85% by mass relative to the total mass of the adhesive composition. quality%.

(光聚合起始劑(h)) (Photopolymerization initiator (h))

接著劑組成物於含有能量線硬化性樹脂(g)之情形時,亦可為了高效率地進行能量線硬化性樹脂(g)之聚合反應而含有光聚合起始劑(h)。 When the adhesive composition contains the energy ray-curable resin (g), the photopolymerization initiator (h) may be contained in order to efficiently perform the polymerization reaction of the energy ray-curable resin (g).

作為接著劑組成物中之光聚合起始劑(h),例如可列舉:安息香、安息香甲醚、安息香乙醚、安息香異丙醚、安息香異丁醚、安息香苯甲酸、安息香苯甲酸甲酯、安息香 二甲基縮酮等安息香化合物;苯乙酮、2-羥基-2-甲基-1-苯基-丙烷-1-酮、2,2-二甲氧基-1,2-二苯基乙烷-1-酮等苯乙酮化合物;雙(2,4,6-三甲基苯甲醯基)苯基氧化膦、2,4,6-三甲基苯甲醯基二苯基氧化膦等醯基氧化膦化合物;苄基苯基硫醚、一硫化四甲基秋蘭姆等硫醚化合物;1-羥基環己基苯基酮等α-酮醇化合物;偶氮雙異丁腈等偶氮化合物;二茂鈦等二茂鈦化合物;噻噸酮(thioxanthone)等噻噸酮化合物;過氧化物化合物;二乙醯等二酮化合物;苯偶醯;二苯偶醯;二苯甲酮;2,4-二乙基噻噸酮;1,2-二苯基甲烷;2-羥基-2-甲基-1-[4-(1-甲基乙烯基)苯基]丙酮;1-氯蒽醌、2-氯蒽醌等醌化合物等。 Examples of the photopolymerization initiator (h) in the adhesive composition include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin benzoic acid methyl ester, and benzoin. Benzoin compounds such as dimethyl ketal; acetophenone, 2-hydroxy-2-methyl-1-phenyl-propane-1-one, 2,2-dimethoxy-1,2-diphenylethyl Acetophenone compounds such as alkane-1-ones; bis (2,4,6-trimethylbenzylidene) phenylphosphine oxide, 2,4,6-trimethylbenzylidenediphenylphosphine oxide Isofluorenyl phosphine oxide compounds; thioether compounds such as benzylphenyl sulfide and tetramethylthiuram monosulfide; α-ketoalcohol compounds such as 1-hydroxycyclohexylphenyl ketone; and azobisisobutyronitrile Nitrogen compounds; Titanocene compounds such as titanocene; thioxanthone compounds such as thioxanthone; peroxide compounds; diketone compounds such as diethylfluorene; benzoin; benzophenone; benzophenone ; 2,4-diethylthioxanthone; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1- [4- (1-methylvinyl) phenyl] acetone; 1- Quinone compounds such as chloroanthraquinone and 2-chloroanthraquinone.

另外,作為光聚合起始劑(h),例如亦可列舉胺等光增感劑等。 Examples of the photopolymerization initiator (h) include a photosensitizer such as an amine.

接著劑組成物所含有之光聚合起始劑(h)可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些之組合及比率可任意選擇。 The photopolymerization initiator (h) contained in the adhesive composition may be only one type, or two or more types. In the case of two or more types, the combination and ratio of these may be arbitrarily selected.

於接著劑組成物中,相對於能量線硬化性樹脂(g)之含量100質量份,光聚合起始劑(h)之含量較佳為0.1質量份至20質量份,更佳為1質量份至10質量份,尤佳為2質量份至5質量份。 In the adhesive composition, the content of the photopolymerization initiator (h) is preferably 0.1 to 20 parts by mass, and more preferably 1 part by mass with respect to 100 parts by mass of the content of the energy ray-curable resin (g). To 10 parts by mass, particularly preferably 2 to 5 parts by mass.

(通用添加劑(i)) (General additive (i))

通用添加劑(I)亦可為公知者,可根據目的而任意選擇,並無特別限定,作為較佳者,例如可列舉:塑化劑、抗靜電劑、抗氧化劑、著色劑(染料、顏料)、吸氣劑等。 The general-purpose additive (I) may also be known, and may be arbitrarily selected according to the purpose, and is not particularly limited. Preferred examples include plasticizers, antistatic agents, antioxidants, and colorants (dye, pigment). , Getter, etc.

接著劑組成物及膜狀接著劑所含有之通用添加劑(i)可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些之組合及比率可任意選擇。 The general additive (i) contained in the adhesive composition and the film-like adhesive may be only one type, or two or more types. In the case of two or more types, the combination and ratio of these may be arbitrarily selected.

接著劑組成物及膜狀接著劑之含量並無特別限定,只要根據目的而適當選擇即可。 The content of the adhesive composition and the film-like adhesive is not particularly limited, and may be appropriately selected depending on the purpose.

(溶劑) (Solvent)

接著劑組成物較佳為進一步含有溶劑。含有溶劑之接著劑組成物係操作性變良好。 The adhesive composition preferably further contains a solvent. The solvent-containing adhesive composition system has good operability.

前述溶劑並無特別限定,作為較佳者,例如可列舉:甲苯、二甲苯等烴;甲醇、乙醇、2-丙醇、異丁醇(亦稱為2-甲基丙烷-1-醇)、1-丁醇等醇;乙酸乙酯等酯;丙酮、甲基乙基酮等酮;四氫呋喃等醚;二甲基甲醯胺、N-甲基吡咯啶酮等醯胺(亦即具有醯胺鍵之化合物)等。 The solvent is not particularly limited, and preferred examples include hydrocarbons such as toluene and xylene; methanol, ethanol, 2-propanol, isobutanol (also known as 2-methylpropane-1-ol), Alcohols such as 1-butanol; esters such as ethyl acetate; ketones such as acetone, methyl ethyl ketone; ethers such as tetrahydrofuran; fluorenamines such as dimethylformamide, N-methylpyrrolidone (i.e., with fluoramine Bond compounds) and so on.

接著劑組成物所含有之溶劑可僅為一種,亦可為兩種以上,於為兩種以上之情形時,這些之組合及比率可任意選擇。 The solvent contained in the adhesive composition may be only one kind, or two or more kinds. In the case of two or more kinds, the combination and ratio of these may be arbitrarily selected.

就可將接著劑組成物中之含有成分更均勻地混合之方面而言,接著劑組成物所含有之溶劑較佳為甲基乙基酮等 。 The solvent contained in the adhesive composition is preferably methyl ethyl ketone, etc., from the viewpoint that the components contained in the adhesive composition can be more uniformly mixed.

[接著劑組成物的製造方法] [Manufacturing method of adhesive composition]

接著劑組成物係藉由將用以構成該接著劑組成物之各成分調配而獲得。 The adhesive agent composition is obtained by blending each component constituting the adhesive agent composition.

調配各成分時之添加順序並無特別限定,亦可同時添加兩種以上之成分。 The order of adding the ingredients is not particularly limited, and two or more kinds of ingredients may be added simultaneously.

於使用溶劑之情形時,可藉由將溶劑與溶劑以外之任一調配成分混合而將該調配成分預先稀釋而使用,亦可不將溶劑以外之任一調配成分預先稀釋,而藉由將溶劑與這些調配成分混合而使用。 In the case of using a solvent, the solvent may be mixed with any formulation component other than the solvent, and the formulation component may be diluted before use, or any formulation component other than the solvent may not be diluted in advance, and the solvent and the These preparation ingredients are mixed and used.

於調配時混合各成分之方法並無特別限定,只要從以下方法中適當選擇即可:使攪拌子或攪拌翼等旋轉而進行混合之方法;使用混合機進行混合之方法;施加超音波進行混合之方法等公知方法。 There is no particular limitation on the method of mixing the components during the preparation, as long as it is appropriately selected from the following methods: a method of mixing by rotating a stirrer or a stirring wing, etc .; a method of mixing using a mixer; and applying an ultrasonic wave to mix And other well-known methods.

各成分之添加及混合時之溫度以及時間只要各調配成分不劣化,則並無特別限定,只要適當調節即可,溫度較佳為15℃至30℃。 The temperature and time during the addition and mixing of the components are not particularly limited as long as the prepared components do not deteriorate, as long as they are appropriately adjusted, the temperature is preferably 15 ° C to 30 ° C.

本發明之膜狀接著劑複合片較佳為支持片僅由基材所構成,且針對該基材直接接觸而設置有膜狀接著劑。於如此般支持片不具有黏著劑層等,於基材上直接設置有膜狀接著劑之情形時,膜狀接著劑中之成分移行至黏著劑層等 基材上之其他層或與此相反而此種其他層中之成分移行至膜狀接著劑等構成成分之層間移動得到抑制。因此,顯著抑制製造半導體裝置時之步驟異常之產生或半導體封裝之可靠性降低。 In the film-shaped adhesive composite sheet of the present invention, it is preferable that the support sheet is composed of only a substrate, and a film-shaped adhesive is provided for the substrate to be in direct contact. When such a support sheet does not have an adhesive layer and the like, and a film-like adhesive is directly provided on the substrate, the components in the film-like adhesive migrate to other layers on the substrate such as the adhesive layer or the other way around. On the other hand, the migration of components in such other layers to the interlayer movement of constituent components such as a film-like adhesive is suppressed. Therefore, it is possible to significantly suppress the occurrence of step abnormalities in manufacturing a semiconductor device or decrease the reliability of the semiconductor package.

通常,於使用不具有黏著劑層者作為膜狀接著劑複合片之情形時,於將半導體晶片保持貼附有膜狀接著劑之狀態從支持片分離時,容易產生雙晶粒。然而,根據本發明之膜狀接著劑複合片,即便於該複合片不具有黏著劑層之情形時,亦抑制雙晶粒之產生。 In general, when a film-like adhesive composite sheet is used without a pressure-sensitive adhesive layer, when the semiconductor wafer is separated from the support sheet while the film-shaped adhesive is attached to the semiconductor wafer, double crystal grains are easily generated. However, according to the film-shaped adhesive composite sheet of the present invention, even when the composite sheet does not have an adhesive layer, the generation of double crystal grains is suppressed.

<<膜狀接著劑複合片的製造方法>> << Making method of film-like adhesive compound sheet >>

本發明之膜狀接著劑複合片可藉由將上述各層以成為對應之位置關係之方式依序積層而製造。各層之形成方法如上文中所說明。 The film-like adhesive composite sheet of the present invention can be produced by sequentially laminating the above-mentioned layers so as to have a corresponding positional relationship. The formation method of each layer is as described above.

例如,於製造支持片時於基材上積層黏著劑層之情形時,藉由在基材上塗敷上述黏著劑組成物,視需要加以乾燥,可積層黏著劑層。 For example, in the case of laminating an adhesive layer on a substrate when manufacturing a support sheet, the adhesive layer can be laminated by coating the above-mentioned adhesive composition on the substrate and drying it if necessary.

例如於在積層於基材上的黏著劑層之上再者積層膜狀接著劑之情形時,作為一個態樣,可於黏著劑層上塗敷接著劑組成物,於前述黏著劑層上直接形成膜狀接著劑。亦即,於形成連續兩層之積層構造之情形時,可使用任一組成物,於由前述組成物所形成之層上再者直接塗敷其他組成物而新形成層。另外,作為另一態樣,這些兩層中後積 層之層亦可使用前述組成物預先形成於其他剝離膜上,並將該所形成之層中的與和前述剝離膜接觸之側為相反側的露出面與已形成之其餘層之露出面貼合,藉此形成連續兩層之積層構造。此時,前述組成物較佳為塗敷於剝離膜之剝離處理面。剝離膜只要於形成積層構造後視需要而去除即可。 For example, when a film-shaped adhesive is laminated on the adhesive layer laminated on the substrate, as an aspect, an adhesive composition can be applied on the adhesive layer and directly formed on the aforementioned adhesive layer. Membrane adhesive. That is, in the case of forming a laminated structure of two consecutive layers, any composition may be used, and another composition may be directly applied to the layer formed of the foregoing composition to newly form a layer. In addition, as another aspect, the back-laminated layer of these two layers may be formed in advance on another release film using the aforementioned composition, and the side of the formed layer that is in contact with the release film is the opposite side The exposed surface of is bonded to the exposed surfaces of the remaining layers already formed, thereby forming a continuous two-layer laminated structure. In this case, the composition is preferably applied to a release-treated surface of a release film. The release film may be removed as necessary after forming a laminated structure.

例如,於製造於基材上積層黏著劑層並於前述黏著劑層上積層膜狀接著劑而成之膜狀接著劑複合片(亦即支持片為基材及黏著劑層之積層物的膜狀接著劑複合片)之情形時,可藉由以下方式獲得膜狀接著劑複合片:於基材上塗敷黏著劑組成物,視需要加以乾燥,藉此於基材上積層黏著劑層,另外於剝離膜上塗敷接著劑組成物,視需要加以乾燥,藉此於前述剝離膜上形成膜狀接著劑,將該膜狀接著劑之露出面與積層於前述基材上之黏著劑層之露出面貼合,將前述膜狀接著劑積層於前述黏著劑層上。 For example, a film-shaped adhesive compound sheet (that is, a film of a support sheet as a substrate and a laminate of an adhesive layer) produced by laminating an adhesive layer on a substrate and laminating a film-shaped adhesive on the aforementioned adhesive layer. In the case of adhesive-like adhesive composite sheet), a film-like adhesive composite sheet can be obtained by coating an adhesive composition on a substrate and drying it if necessary, thereby laminating an adhesive layer on the substrate, and An adhesive composition is coated on the release film, and if necessary dried, a film-shaped adhesive is formed on the release film, and the exposed surface of the film-shaped adhesive and the adhesive layer laminated on the substrate are exposed. The surface is bonded, and the film-shaped adhesive is laminated on the adhesive layer.

再者,於基材上積層黏著劑層之情形時,亦可如上所述,代替於基材上塗敷黏著劑組成物之方法,而於剝離膜上塗敷黏著劑組成物,視需要加以乾燥,藉此於剝離膜上形成黏著劑層,將該黏著劑層之露出面與基材之一個表面貼合,藉此將前述黏著劑層積層於前述基材上。 In addition, when the adhesive layer is laminated on the substrate, as described above, instead of applying the adhesive composition on the substrate, the adhesive composition may be applied on the release film and dried as necessary. Thereby, an adhesive layer is formed on the release film, and the exposed surface of the adhesive layer is adhered to one surface of the substrate, thereby laminating the adhesive on the substrate.

任一方法中,剝離膜只要於形成目標積層構造後之任意時序去除即可。 In either method, the release film may be removed at any timing after the target laminated structure is formed.

如此,構成膜狀接著劑複合片之基材以外之層均可利用預先形成於剝離膜上並貼合於目標層之表面的方法而積層,故只要視需要適當選擇採用此種步驟之層而製造膜狀接著劑複合片即可。 In this way, layers other than the base material constituting the film-like adhesive composite sheet can be laminated by a method previously formed on the release film and bonded to the surface of the target layer, so as long as the layer using this step is appropriately selected as needed, A film-like adhesive composite sheet may be produced.

再者,膜狀接著劑複合片通常係以於該膜狀接著劑複合片中的與支持片為相反側之最表層(例如膜狀接著劑)之表面貼合有剝離膜的狀態而保管。因此,亦藉由以下方式而獲得膜狀接著劑複合片:於該剝離膜(較佳為該剝離膜之剝離處理面)上,塗敷用以形成構成膜狀接著劑複合片中的與支持片側為相反側之最表層的層之組成物(亦即接著劑組成物等),視需要加以乾燥,藉此於剝離膜上形成構成前述最表層之層,於該層中之與和剝離膜接觸之側為相反側的露出面上利用上述任一方法積層其餘各層,不將剝離膜加以去除而保持貼合之狀態。 The film-shaped adhesive composite sheet is usually stored in a state in which a release film is bonded to the surface of the outermost layer (for example, a film-shaped adhesive) on the opposite side to the support sheet in the film-shaped adhesive composite sheet. Therefore, a film-like adhesive composite sheet is also obtained by coating the release film (preferably the release-treated surface of the release film) with a support for forming and forming a film-like adhesive composite sheet. The composition of the outermost layer (ie, the adhesive composition, etc.) on the opposite side of the sheet side is dried as necessary to form a layer constituting the outermost layer on the release film, and the release layer and the release film The contact side is an exposed surface on the opposite side, and the remaining layers are laminated by any of the methods described above, and the peeling film is not removed, and the bonded state is maintained.

<<半導體裝置的製造方法>> << Method for Manufacturing Semiconductor Device >>

本發明之一實施形態之半導體裝置的製造方法係使用前述膜狀接著劑複合片,並且包含有:將前述膜狀接著劑複合片經由前述膜狀接著劑而貼附於經分割之複數個半導體晶片(以下有時簡稱為「貼附步驟」);針對貼附於前述半導體晶片之前述膜狀接著劑複合片中之支持片,從與設置有前述膜狀接著劑之側為相反之側隔著前述支持片對前 述膜狀接著劑施力,藉此將前述膜狀接著劑切斷(以下有時簡稱為「切斷步驟」);以及將前述半導體晶片及貼附於該半導體晶片之切斷後之前述膜狀接著劑從前述支持片分離(以下有時簡稱為「分離步驟」)。 A method for manufacturing a semiconductor device according to an embodiment of the present invention uses the film-shaped adhesive composite sheet, and includes attaching the film-shaped adhesive composite sheet to a plurality of divided semiconductors through the film-shaped adhesive. Wafers (hereinafter sometimes referred to as "attachment steps"); the support sheet attached to the aforementioned film-like adhesive composite sheet of the semiconductor wafer is separated from the side opposite to the side where the film-like adhesive is provided Apply force to the film-shaped adhesive by the support sheet, thereby cutting the film-shaped adhesive (hereinafter sometimes referred to simply as the "cutting step"); and cutting the semiconductor wafer and a die attached to the semiconductor wafer The film-like adhesive after separation is separated from the support sheet (hereinafter sometimes referred to simply as "separation step").

根據前述製造方法,藉由使用前述膜狀接著劑複合片,可於製造半導體裝置時,利用經簡化之方法抑制步驟異常之產生而將貼附有膜狀接著劑之半導體晶片從支持片分離。 According to the aforementioned manufacturing method, by using the aforementioned film-shaped adhesive composite sheet, a semiconductor device to which the film-shaped adhesive is affixed can be separated from the support sheet by using a simplified method to suppress the occurrence of step abnormalities when manufacturing a semiconductor device.

<貼附步驟> <Attachment procedure>

於前述貼附步驟中,將前述膜狀接著劑複合片經由前述膜狀接著劑而貼附於經分割之複數個半導體晶片。於該步驟中,將一片膜狀接著劑複合片中之膜狀接著劑貼附於複數個半導體晶片之背面。 In the aforementioned attaching step, the aforementioned film-like adhesive composite sheet is attached to a plurality of divided semiconductor wafers via the aforementioned film-like adhesive. In this step, a film-shaped adhesive in a film-shaped adhesive composite sheet is attached to the back surface of a plurality of semiconductor wafers.

經分割之複數個半導體晶片例如可藉由以下方式製作:從半導體晶圓中之與前述膜狀接著劑複合片之貼附面(有時稱為背面)為相反側的表面形成槽,將前述背面進行研磨直至到達該槽為止。作為形成前述槽之方法,例如可列舉:使用刀片刻劃半導體晶圓,藉此形成槽之方法(亦即刀片切割);藉由雷射照射刻劃半導體晶圓,藉此形成槽之方法(亦即雷射切割);藉由噴附包含研磨劑之水而刻劃半導體晶圓,藉此形成槽之方法(亦即水切割)等。 The divided plurality of semiconductor wafers can be produced, for example, by forming grooves from the surface of the semiconductor wafer opposite to the surface on which the film-like adhesive compound is attached (sometimes referred to as the back surface), and The back is ground until it reaches the groove. As a method of forming the aforementioned grooves, for example, a method of scribe a semiconductor wafer using a blade to form a groove (ie, dicing by a blade); a method of scribe a semiconductor wafer by laser irradiation to form a groove ( (Ie, laser cutting); a method of forming a groove by spraying a semiconductor wafer by spraying water containing an abrasive (ie, water cutting), and the like.

另外,經分割之複數個半導體晶片亦可藉由以下方式製作:以於設置於半導體晶圓之內部之焦點聚焦之方式照射紅外域之雷射光,於半導體晶圓之內部形成改質層後,對半導體晶圓之前述背面進行研磨,再者於前述背面對研磨後之半導體晶圓施力,或對前述背面研磨中之半導體晶圓施加研磨時之力,藉此於前述改質層之形成部位將前述半導體晶圓分割。 In addition, a plurality of divided semiconductor wafers can also be produced by irradiating laser light in the infrared region in a manner focused on the focus provided inside the semiconductor wafer, and forming a modified layer inside the semiconductor wafer. Polish the aforementioned back surface of the semiconductor wafer, and then apply force to the polished semiconductor wafer on the aforementioned back surface, or apply the force during polishing to the aforementioned semiconductor wafer during the aforementioned back grinding, thereby forming the modified layer. The part divides the aforementioned semiconductor wafer.

<切斷步驟> <Cutting step>

於前述切斷步驟中,於前述貼附步驟後,針對貼附於前述半導體晶片之膜狀接著劑複合片中之支持片,從與設置有前述膜狀接著劑之側為相反之側隔著前述支持片對前述膜狀接著劑施力,將前述膜狀接著劑切斷。以下,一邊參照圖式一邊對本發明之一實施形態之半導體裝置的製造方法加以說明。圖1中的(a)至圖1中的(c)為示意性地表示本發明的製造方法中的從膜狀接著劑之切斷至從半導體晶片的支持片之分離為止之一實施形態的剖視圖。圖1中的(a)至圖1中的(c)中,僅對與膜狀接著劑複合片有關之構成進行剖面表示。 In the cutting step, after the attaching step, the support sheet attached to the film-shaped adhesive compound sheet of the semiconductor wafer is separated from the side opposite to the side on which the film-shaped adhesive is provided. The support sheet applies force to the film-shaped adhesive, and cuts the film-shaped adhesive. Hereinafter, a method for manufacturing a semiconductor device according to an embodiment of the present invention will be described with reference to the drawings. (A) to (c) of FIG. 1 are schematic views showing an embodiment from the cutting of the film-like adhesive to the separation from the support sheet of a semiconductor wafer in the manufacturing method of the present invention. Sectional view. In (a) to (c) of FIG. 1, only the structure regarding a film-shaped adhesive compound sheet is shown in cross section.

如圖1中的(a)所示,藉由前述貼附步驟將膜狀接著劑複合片1之膜狀接著劑12貼附於複數個半導體晶片9之背面9b。而且,於該步驟中,將半導體裝置的製造裝置(省略總 體圖之圖示)中的將半導體晶片上頂之上頂部81,抵接於膜狀接著劑複合片1中之支持片11中的與設置有膜狀接著劑12之側的面(有時稱為表面)11a為相反側之面(有時稱為背面)11b。 As shown in (a) of FIG. 1, the film-shaped adhesive 12 of the film-shaped adhesive composite sheet 1 is attached to the back surface 9 b of the plurality of semiconductor wafers 9 by the aforementioned attaching step. Furthermore, in this step, the semiconductor wafer manufacturing apparatus (not shown in the general drawing) is placed on top of the semiconductor wafer 81 on the support sheet 11 in the film-shaped adhesive composite sheet 1. A surface (sometimes referred to as a back surface) 11b opposite to a surface (sometimes referred to as a surface) 11a on the side where the film-like adhesive 12 is provided.

於支持片11僅由基材所構成之情形時,膜狀接著劑複合片1為將基材及膜狀接著劑12積層而成之片,將膜狀接著劑12中之與和基材接觸之側為相反側的表面貼附於半導體晶片9之背面9b。 When the support sheet 11 is composed only of a substrate, the film-like adhesive composite sheet 1 is a sheet obtained by laminating a substrate and a film-like adhesive 12, and the film-like adhesive 12 is in contact with the substrate. The surface on the opposite side is attached to the back surface 9 b of the semiconductor wafer 9.

於支持片11為將基材及黏著劑層積層而成之片之情形時,膜狀接著劑複合片1係依序積層有基材、黏著劑層及膜狀接著劑12,將膜狀接著劑12中之與和黏著劑層接觸之側為相反側的表面貼附於半導體晶片9之背面9b。 When the support sheet 11 is a sheet obtained by laminating a base material and an adhesive, the film-like adhesive composite sheet 1 has a base material, an adhesive layer, and a film-like adhesive 12 laminated in this order, The surface of the agent 12 on the side opposite to the side in contact with the adhesive layer is attached to the back surface 9 b of the semiconductor wafer 9.

於該步驟中,繼而如圖1中的(b)所示,針對膜狀接著劑複合片1中之支持片11,從該支持片11之背面11b施力,藉此隔著支持片11對膜狀接著劑12施力。此處,示出如下之例:突起(亦即銷)811從上頂部81突出,突起811之頂端部將支持片11從該支持片11之背面11b上頂,藉此介隔支持片11對膜狀接著劑12朝突起811之突出方向施力。此時,可適當調節突起811之突出量(亦即上頂量)、突出速度(亦即上頂速度)、突出狀態之保持時間(亦即抬升等待時間)等上頂條件。此處,示出將支持片11上頂之突起811之個數為5個之情形,但亦可為1個,亦可為2個以上,突起811之個數只要 適當選擇即可。 In this step, as shown in FIG. 1 (b), a force is applied to the support sheet 11 in the film-like adhesive composite sheet 1 from the back surface 11 b of the support sheet 11, so as to sandwich the support sheet 11 through the support sheet 11. The film-like adhesive 12 applies a force. Here, an example is shown: a protrusion (ie, a pin) 811 protrudes from the upper top portion 81, and a top portion of the protrusion 811 lifts the support sheet 11 from the back surface 11b of the support sheet 11, thereby interposing the support sheet 11 pair The film-shaped adhesive 12 is urged in a protruding direction of the protrusion 811. At this time, it is possible to appropriately adjust the protruding conditions (ie, the amount of pushing up), the protruding speed (ie, the pushing speed), the holding time of the protruding state (ie, the waiting time for lifting), and other lifting conditions. Here, the number of the protrusions 811 on the support sheet 11 is shown as five, but it may be one or two or more. The number of the protrusions 811 may be appropriately selected.

若如此般對膜狀接著劑12施力,則由於使用膜狀接著劑複合片1,故而可藉由伴隨著突起811之上頂而產生之剪切力,一邊抑制步驟異常之產生一邊將膜狀接著劑12切斷。更具體而言,可將膜狀接著劑12於目標部位亦即僅包圍作為半導體晶片9的成為從支持片11之分離對象者的部位於常溫切斷。而且,例如可於不另行設置對膜狀接著劑12照射雷射而切斷之步驟或藉由將膜狀接著劑12擴張而切斷之步驟等以膜狀接著劑12之切斷為主要目的之步驟之情況下進行切斷。 If a force is applied to the film-like adhesive 12 in this manner, since the film-like adhesive composite sheet 1 is used, it is possible to suppress the occurrence of step abnormalities while suppressing the occurrence of abnormalities in the film while suppressing the occurrence of step abnormalities due to the shear force generated by the top of the protrusion 811. The adhesive agent 12 is cut. More specifically, the film-shaped adhesive 12 can be cut at room temperature at a target portion, that is, only a portion surrounding the person to be separated from the support sheet 11 as the semiconductor wafer 9 is located at a normal temperature. Further, for example, the step of cutting off the film-shaped adhesive 12 may be performed without separately providing a step of cutting the film-shaped adhesive 12 by laser or a step of cutting the film-shaped adhesive 12 by expanding the film-shaped adhesive 12 as the main purpose. In the case of step.

<分離步驟> <Separation step>

於前述分離步驟中,於前述切斷步驟後,如圖1中的(c)所示,將半導體晶片9及貼附於該半導體晶片9之切斷後之膜狀接著劑12從支持片11分離(亦即拾取)。該步驟通常係於前述切斷步驟後立即連續進行。此處,示出如下之例:藉由半導體裝置的製造裝置之拉升部82將半導體晶片9拉升,藉此將貼附於該半導體晶片9之切斷後之膜狀接著劑12從支持片11分離。如此般拉升半導體晶片9之方法可為公知方法,例如可列舉藉由真空夾盤吸附半導體晶片9之表面並拉升的方法等。 In the aforementioned separating step, as shown in FIG. 1 (c), after the aforementioned cutting step, the semiconductor wafer 9 and the cut film-shaped adhesive 12 attached to the semiconductor wafer 9 are separated from the support sheet 11. (I.e. pick up). This step is usually performed immediately after the aforementioned cutting step. Here, an example is shown in which the semiconductor wafer 9 is pulled up by the pulling portion 82 of the manufacturing apparatus of the semiconductor device, whereby the film-shaped adhesive 12 adhered to the semiconductor wafer 9 is cut from the support sheet. 11 separation. The method of pulling up the semiconductor wafer 9 in this manner may be a known method, and examples thereof include a method of sucking the surface of the semiconductor wafer 9 by a vacuum chuck and pulling up.

若如此般拉升半導體晶片9,則由於使用膜狀接著劑複 合片1,故而可一邊抑制步驟異常之產生,一邊使膜狀接著劑12從支持片11剝離。更具體而言,抑制以下現象:膜狀接著劑12中之與目標半導體晶片9對應的部位從支持片11剝離,並且膜狀接著劑12中之與目標外之半導體晶片9對應的部位從支持片11剝離。而且,由於已將膜狀接著劑12於預定部位切斷,故而將經拉升之半導體晶片9與膜狀接著劑12一併從支持片11分離。 When the semiconductor wafer 9 is pulled up in this manner, since the film-like adhesive composite sheet 1 is used, the film-like adhesive 12 can be peeled from the support sheet 11 while suppressing the occurrence of step abnormalities. More specifically, the phenomenon that the portion corresponding to the target semiconductor wafer 9 in the film-shaped adhesive 12 is peeled from the support sheet 11 and the portion corresponding to the semiconductor wafer 9 outside the target in the film-shaped adhesive 12 is removed from the support is suppressed. The sheet 11 is peeled. In addition, since the film-like adhesive 12 has been cut at a predetermined position, the lifted semiconductor wafer 9 and the film-like adhesive 12 are separated from the support sheet 11 together.

於本發明的製造方法中,可使用與膜狀接著劑一併被分離(亦即被拾取)之半導體晶片,以後利用與以往的方法相同之方法,亦即經由藉由膜狀接著劑將前述半導體晶片於基板之電路面晶粒接著的步驟而製造半導體裝置。例如,藉由膜狀接著劑將前述半導體晶片於基板之電路面晶粒接著,視需要對該半導體晶片再者積層一個以上之半導體晶片,進行打線接合後,藉由樹脂將總體密封,藉此製成半導體封裝。繼而,只要使用該半導體封裝製作目標半導體裝置即可。 In the manufacturing method of the present invention, a semiconductor wafer that is separated (that is, picked up) together with a film-shaped adhesive can be used. Later, the same method as in the conventional method is used, that is, the aforementioned method is performed by using the film-shaped adhesive. The semiconductor wafer is formed on the circuit surface of the substrate, and a semiconductor device is manufactured. For example, the aforementioned semiconductor wafer is bonded to the circuit surface of the substrate with a film-shaped adhesive, and if necessary, one or more semiconductor wafers are laminated on the semiconductor wafer, and after wire bonding is performed, the whole is sealed with resin, thereby Made into a semiconductor package. Then, it is only necessary to produce a target semiconductor device using the semiconductor package.

作為一個態樣,本發明之半導體裝置的製造方法包含有:將前述膜狀接著劑複合片經由前述膜狀接著劑而貼附於經分割之複數個半導體晶片;針對貼附於前述半導體晶片之前述膜狀接著劑複合片中之支持片,從與設置有前述膜狀接著劑之側為相反之側隔著前述支持片對前述膜狀接著劑施力,藉此將前述膜狀接著劑切斷;將前述半導體晶片及貼附於該前述半導體晶片之切斷後之前述膜狀接著劑 從前述支持片分離;藉由前述膜狀接著劑將從前述支持片分離之半導體晶片於基板之電路面晶粒接著;以及視需要對前述半導體晶片再者積層一個以上之半導體晶片,進行打線接合後,藉由樹脂將總體密封,藉此獲得半導體封裝。 As one aspect, the method for manufacturing a semiconductor device of the present invention includes: attaching the film-like adhesive composite sheet to a plurality of divided semiconductor wafers through the film-like adhesive; The support sheet in the film-shaped adhesive composite sheet is configured to cut the film-shaped adhesive by applying force to the film-shaped adhesive through the support sheet from a side opposite to a side on which the film-shaped adhesive is provided. The semiconductor wafer and the film-shaped adhesive adhered to the semiconductor wafer are separated from the support sheet; the semiconductor wafer separated from the support sheet by the film-shaped adhesive is on the circuit surface of the substrate Die bonding; and if necessary, laminating more than one semiconductor wafer to the aforementioned semiconductor wafer, wire bonding, and overall sealing with resin to obtain a semiconductor package.

本發明之半導體裝置的製造方法不限定於引用圖1中的(a)至圖1中的(c)所說明之上述方法,亦可於不損及本發明之功效之範圍內,於上述方法中變更、刪除或追加一部分構成。 The manufacturing method of the semiconductor device of the present invention is not limited to the above-mentioned method described with reference to (a) to (c) in FIG. 1, and may also be within the above-mentioned method within a range that does not impair the efficacy of the present invention. Change, delete, or add a part of the configuration.

例如,作為隔著支持片11對膜狀接著劑12施力之方法,至此為止對藉由利用突起811將支持片11上頂而對膜狀接著劑12施力之方法進行了說明。作為除此以外之方法,例如可列舉:代替突起811而藉由滑塊將支持片11上頂,藉此對膜狀接著劑12施力之方法。 For example, as a method of applying force to the film-like adhesive 12 via the support sheet 11, a method of applying force to the film-like adhesive 12 by lifting the support sheet 11 with the protrusion 811 has been described so far. Other methods include, for example, a method of applying force to the film-shaped adhesive 12 by sliding the support sheet 11 up by a slider instead of the protrusion 811.

圖2中的(a)及圖2中的(b)為用以示意性地說明對上述膜狀接著劑施力而將該膜狀接著劑切斷的另一實施形態之剖視圖。再者,於圖2中的(a)及圖2中的(b)中,對與圖1中的(a)至圖1中的(c)所示者相同之構成要素標注與圖1中的(a)至圖1中的(c)之情形相同之符號,省略該構成要素之詳細說明。這一情況於圖3中的(a)及圖3中的(b)以後之圖中亦相同。 FIG. 2 (a) and FIG. 2 (b) are cross-sectional views schematically illustrating another embodiment in which the film-shaped adhesive is cut by applying force to the film-shaped adhesive. In addition, in (a) in FIG. 2 and (b) in FIG. 2, the same constituent elements as those shown in (a) to (c) in FIG. 1 are denoted as in FIG. 1. (A) to (c) in FIG. 1 are the same symbols, and detailed descriptions of the constituent elements are omitted. This situation is the same in the figures after (a) in FIG. 3 and (b) in FIG. 3.

此處所示係將膜狀接著劑之切斷方法替換為參照圖1 中的(b)所說明者。 The method shown here replaces the cutting method of the film-like adhesive with the one described with reference to (b) in FIG. 1.

於應用本實施形態之情形時,亦首先利用與參照圖1中的(a)所說明之情形相同之方法進行貼附步驟。 In the case of applying this embodiment, the attaching step is also first performed by the same method as the case described with reference to (a) in FIG. 1.

繼而,針對膜狀接著劑複合片1中之支持片11,於該支持片11之背面11b隔著支持片11對膜狀接著劑12施力。然而,本實施形態中,藉由圖2中的(a)及圖2中的(b)所示般之滑塊812之移動而非上頂部81中之圖1中的(b)所示般之突起811之突出,而將支持片11從該支持片11之背面11b上頂。 Next, for the support sheet 11 in the film-shaped adhesive composite sheet 1, the film-shaped adhesive 12 is urged on the back surface 11b of the support sheet 11 via the support sheet 11. However, in this embodiment, the movement of the slider 812 shown in FIG. 2 (a) and FIG. 2 (b) is not the same as shown in FIG. 1 (b) in the upper top 81. The protrusion 811 protrudes, and the support sheet 11 is lifted from the back surface 11 b of the support sheet 11.

於本實施形態中,如圖2中的(a)所示,從上頂部81突出之滑塊812之表面812a成為與支持片11之背面11b接觸之狀態。此時,滑塊812之表面812a與圖1中的(a)所示般之切斷步驟前之支持片11之背面11b並不平行。因此,於與滑塊812之表面812a正交之方向亦即傾斜方向而非鉛垂方向,對支持片11從該支持片11之背面11b施力,藉此膜狀接著劑12之上頂高度產生差。然而,與圖1中的(b)之情形同樣地隔著支持片11對膜狀接著劑12施力。藉此,於膜狀接著劑12之上頂高度高之區域中,於未貼附半導體晶片9之區域(圖2中的(a)中之第一區域121)中,藉由伴隨著上頂而產生之剪切力,可一邊抑制步驟異常之產生一邊將膜狀接著劑12切斷。 In this embodiment, as shown in (a) of FIG. 2, the surface 812 a of the slider 812 protruding from the upper top portion 81 is brought into contact with the back surface 11 b of the support sheet 11. At this time, the surface 812a of the slider 812 is not parallel to the back surface 11b of the support sheet 11 before the cutting step as shown in FIG. 1 (a). Therefore, the support sheet 11 is forced from the back surface 11b of the support sheet 11 in a direction orthogonal to the surface 812a of the slider 812, that is, an oblique direction instead of a vertical direction, thereby the top height of the film-shaped adhesive 12 Make a difference. However, similarly to the case of (b) in FIG. 1, the film-shaped adhesive 12 is urged through the support sheet 11. Thereby, in the region where the top height above the film-like adhesive 12 is high, and in the region where the semiconductor wafer 9 is not attached (the first region 121 in (a) in FIG. 2), the top is accompanied by The shearing force generated can cut the film-like adhesive 12 while suppressing the occurrence of step abnormalities.

於滑塊812之上頂時,可適當調節滑塊812之突出量(亦 即上頂量)、傾斜角(亦即上頂速度)、移動速度(亦即抬升等待時間)等上頂條件。 When the slider 812 is pushed upward, the protrusion conditions of the slider 812 (ie, the amount of pushing up), the inclination angle (that is, the speed of pushing up), and the moving speed (that is, the waiting time for lifting) can be appropriately adjusted.

於本實施形態中,繼而如圖2中的(b)所示,使滑塊812朝相對於未被上頂之支持片11之背面11b而平行之方向移動。藉此,支持片11之上頂部位移動。而且,於該上頂部位之移動後,於膜狀接著劑12之上頂高度高之區域中,於未貼附半導體晶片9之區域(圖2中的(b)中之第二區域122),藉由伴隨著上頂而產生之剪切力,可一邊抑制步驟異常之產生一邊將膜狀接著劑12切斷。 In this embodiment, as shown in FIG. 2 (b), the slider 812 is moved in a direction parallel to the back surface 11 b of the support sheet 11 that is not topped. Thereby, the top position of the support sheet 11 is moved. After the upper and upper positions are moved, in a region where the top height above the film-like adhesive 12 is high, a region where the semiconductor wafer 9 is not attached (the second region 122 in (b) in FIG. 2) The film-like adhesive 12 can be cut while suppressing the occurrence of step abnormalities by the shearing force accompanying the top-up.

藉由伴隨著此種滑塊812之移動而產生之剪切力,膜狀接著劑12係與參照圖1中的(a)至圖1中的(c)所說明之情形同樣地,一邊抑制步驟異常之產生一邊被切斷。 By the shearing force accompanying the movement of the slider 812, the film adhesive 12 is suppressed in the same manner as described with reference to (a) to (c) in FIG. 1. The abnormality of the step is cut off.

以後,可利用與參照圖1中的(a)所說明之情形相同之方法進行分離步驟。 Thereafter, the separation step can be performed by the same method as that described with reference to (a) in FIG. 1.

然而,通常與參照圖2中的(a)及圖2中的(b)所說明般之滑塊上頂方式相比,參照圖1中的(a)至圖1中的(c)所說明般之銷上頂方式係膜狀接著劑之切斷功效較高。因此,關於採用哪一方式,例如較佳為考慮支持片的楊氏係數(A)或膜狀接著劑之斷裂伸長率(C)等與強度有關之特性而選擇。 However, it is generally described with reference to (a) in FIG. 2 and (b) in FIG. 2 as described above with reference to (a) to (c) in FIG. 1 The general pin-on-top method is a film-shaped adhesive with high cutting effect. Therefore, it is preferable to select which method to take into consideration, for example, the Young's coefficient (A) of the support sheet or the elongation at break (C) of the film-like adhesive, and the strength-related characteristics are selected.

如以上般,根據本發明之一實施形態之半導體裝置的 製造方法,於前述切斷步驟中,可將膜狀接著劑於目標部位切斷,故而抑制伴隨著膜狀接著劑未被切斷的半導體晶片之分離(抬升)不良。 As described above, according to the method for manufacturing a semiconductor device according to an embodiment of the present invention, in the cutting step, the film-shaped adhesive can be cut at a target portion, so that the film-shaped adhesive can be prevented from being cut. Defective separation (lifting) of the semiconductor wafer.

另外,根據本發明之一實施形態之半導體裝置的製造方法,於前述分離步驟中,膜狀接著劑之目標部位從支持片剝離,故而抑制半導體晶片之分離(抬升)不良之產生。再者,抑制膜狀接著劑之目標外之部位從支持片剝離,故而抑制不僅目標半導體晶片而且與該目標半導體晶片鄰接之半導體晶片亦同時與膜狀接著劑一併從支持片分離的所謂雙晶粒之產生。 In addition, according to the method for manufacturing a semiconductor device according to an embodiment of the present invention, in the aforementioned separation step, the target portion of the film-like adhesive is peeled from the support sheet, so that occurrence of separation (lifting) defects of the semiconductor wafer is suppressed. In addition, peeling off parts of the film-shaped adhesive from the support sheet is suppressed, so that not only the target semiconductor wafer but also a semiconductor wafer adjacent to the target semiconductor wafer is simultaneously suppressed from being separated from the support sheet together with the film-shaped adhesive. Generation of grains.

如此,根據本發明,可利用經簡化之方法抑制步驟異常之產生而製造半導體裝置。 Thus, according to the present invention, a simplified method can be used to suppress the occurrence of step abnormalities to manufacture a semiconductor device.

於不使用本發明之膜狀接著劑複合片之情形時,有可能於製造半導體裝置時無法抑制以下所示般之步驟異常之產生。 When the film-shaped adhesive compound sheet of the present invention is not used, it may be impossible to suppress the occurrence of abnormalities in the steps shown below when manufacturing a semiconductor device.

圖3中的(a)及圖3中的(b)為示意性地表示使用以往之膜狀接著劑複合片之情形時的半導體裝置的製造過程中的膜狀接著劑複合片及半導體晶片之一態樣的剖視圖。 (A) and (b) of FIG. 3 are schematic diagrams showing examples of a film-like adhesive composite sheet and a semiconductor wafer in a manufacturing process of a semiconductor device when a conventional film-like adhesive composite sheet is used. A cross-section view.

於使用此處所示之膜狀接著劑複合片7之情形時,如圖3中的(a)所示,即便隔著支持片71對膜狀接著劑72施力,支持片71亦大幅度地變形,拾取力未傳遞至膜狀接著劑,膜狀接著劑72未被切斷,再者,於將半導體晶片9拉升時,膜 狀接著劑72從半導體晶片9剝離而保持積層於支持片71。結果如圖3中的(b)所示,發生半導體晶片9之抬升不良。 When the film-shaped adhesive composite sheet 7 shown here is used, as shown in FIG. 3 (a), even if the film-shaped adhesive 72 is urged through the support sheet 71, the support sheet 71 is greatly increased. The ground is deformed, and the pickup force is not transmitted to the film-shaped adhesive, and the film-shaped adhesive 72 is not cut. Furthermore, when the semiconductor wafer 9 is pulled up, the film-shaped adhesive 72 is peeled from the semiconductor wafer 9 and is kept laminated to support. Tablet 71. As a result, as shown in FIG. 3 (b), the lifting failure of the semiconductor wafer 9 occurred.

此種步驟異常例如於以下情形時容易產生:於膜狀接著劑複合片7中,前述支持片的楊氏係數(A)(MPa)小,或前述支持片的厚度(B)(mm)小,或前述支持片的楊氏係數(A)與前述支持片的厚度(B)兩者小,結果前述積(A×B)小於4MPa.mm。 Such a step abnormality is likely to occur, for example, in the case of the film-like adhesive composite sheet 7 in which the Young's coefficient (A) (MPa) of the support sheet is small, or the thickness (B) (mm) of the support sheet is small. , Or both the Young's coefficient (A) of the support sheet and the thickness (B) of the support sheet are small, as a result, the aforementioned product (A × B) is less than 4 MPa. mm.

圖4中的(a)及圖4中的(b)為示意性地表示使用以往之膜狀接著劑複合片之情形時的半導體裝置的製造過程中的膜狀接著劑複合片及半導體晶片之另一態樣的剖視圖。 FIGS. 4 (a) and 4 (b) are schematic diagrams showing the state of a film-like adhesive compound sheet and a semiconductor wafer during the manufacturing process of a semiconductor device when a conventional film-like adhesive compound sheet is used. A cross-sectional view of another aspect.

於使用此處所示之膜狀接著劑複合片7之情形時,即便如圖4中的(a)所示般隔著支持片71對膜狀接著劑72施力,支持片71亦不易變形。因此,將與半導體晶片對應之目標膜狀接著劑之部位之周圍亦抬升,拾取時之力未傳遞至膜狀接著劑,膜狀接著劑72未被切斷。再者,於拉升半導體晶片9時,膜狀接著劑72從半導體晶片9剝離而保持積層於支持片71。結果,如圖3中的(b)所示,產生半導體晶片9之抬升不良。 In the case where the film-shaped adhesive composite sheet 7 shown here is used, even if the film-shaped adhesive 72 is urged through the support sheet 71 as shown in FIG. 4 (a), the support sheet 71 is not easily deformed. . Therefore, the area around the target film-shaped adhesive corresponding to the semiconductor wafer is also lifted, and the force at the time of pickup is not transmitted to the film-shaped adhesive, and the film-shaped adhesive 72 is not cut. When the semiconductor wafer 9 is pulled up, the film-like adhesive 72 is peeled from the semiconductor wafer 9 and is kept laminated on the support sheet 71. As a result, as shown in FIG. 3 (b), the lifting failure of the semiconductor wafer 9 occurs.

此種步驟異常例如容易於以下情形時容易產生:於膜狀接著劑複合片7中,前述支持片的楊氏係數(A)(MPa)大,或前述支持片的厚度(B)(mm)大,或前述支持片的楊氏係數(A)及前述支持片的厚度(B)兩者大,結果前述積(A×B)大於150MPa.mm。 Such a step abnormality is easily caused, for example, when the film-like adhesive compound sheet 7 has a large Young's coefficient (A) (MPa) of the support sheet, or a thickness (B) (mm) of the support sheet. Large, or both the Young's coefficient (A) of the support sheet and the thickness (B) of the support sheet are large, as a result, the aforementioned product (A × B) is greater than 150 MPa. mm.

再者,參照圖3中的(a)及圖3中的(b)至圖4中的(a)及圖4中的(b)所說明之步驟異常係一例,視情形不同,有時亦產生其他步驟異常。 Moreover, the abnormal steps described with reference to (a) in FIG. 3 and (b) in FIG. 3 to (a) in FIG. 4 and (b) in FIG. 4 are examples, and depending on the situation, sometimes Generate other steps exception.

相對於此,於使用本發明之膜狀接著劑複合片之情形時,抑制此種步驟異常之產生,結果,可利用較以往更簡化之方法廉價地製造半導體裝置。 On the other hand, when the film-shaped adhesive composite sheet of the present invention is used, the occurrence of abnormalities in such steps is suppressed, and as a result, a semiconductor device can be manufactured at a lower cost by a more simplified method than in the past.

作為一個態樣,本發明之一實施形態之膜狀接著劑複合片係於支持片上設置有硬化性的膜狀接著劑,並且前述支持片具有基材,前述支持片的厚度為20μm至200μm,較佳為25μm至150μm,更佳為30μm至100μm,尤佳為38μm至80μm;前述膜狀接著劑的厚度為1μm至60μm,較佳為3μm至25μm,更佳為5μm至15μm;前述支持片的楊氏係數為50MPa至5000MPa,較佳為100MPa至4000MPa,更佳為150MPa至3000MPa,尤佳為170MPa至2250MPa;前述支持片的楊氏係數與前述支持片的厚度之積為4MPa.mm至150MPa.mm,較佳為13.6MPa.mm至112.5MPa.mm;前述硬化性膜狀接著劑具有以下特性:於將硬化前之前述膜狀接著劑積層而製成合計厚度成為200μm之積層體時,前述積層體之斷裂伸長率成為1%至2000%,較佳為30%至1200%,更佳為40%至1100%,尤佳為45%至1050%,且具有以下特性:前述積層體之斷裂強度成為0.1MPa至17MPa,較佳為0.2MPa至15MPa,更佳為0.4MPa至13MPa;前述硬 化性膜狀接著劑具有以下特性:於將硬化前之前述膜狀接著劑接著於半導體晶圓時之接著力成為3N/24mm以上15N/24mm以下,較佳為3N/24mm以上11N/24mm以下,更佳為4N/24mm以上11N/24mm以下,尤佳為4N/24mm以上10N/24mm以下;前述硬化性膜狀接著劑具有以下特性:前述接著力/(前述斷裂伸長率×前述斷裂強度)之值成為0.0005以上0.80以下,較佳為0.0006以上0.50以下,更佳為0.0007以上0.10以下。 As one aspect, a film-like adhesive composite sheet according to an embodiment of the present invention is provided with a hardening film-like adhesive on a support sheet, and the support sheet has a substrate, and the thickness of the support sheet is 20 μm to 200 μm. The thickness is preferably 25 μm to 150 μm, more preferably 30 μm to 100 μm, and even more preferably 38 μm to 80 μm. The thickness of the film adhesive is 1 μm to 60 μm, preferably 3 μm to 25 μm, and more preferably 5 μm to 15 μm. The Young's coefficient is 50 MPa to 5000 MPa, preferably 100 MPa to 4000 MPa, more preferably 150 MPa to 3000 MPa, and even more preferably 170 MPa to 2250 MPa; the product of the Young's coefficient of the aforementioned support sheet and the thickness of the aforementioned support sheet is 4 MPa. mm to 150MPa. mm, preferably 13.6 MPa. mm to 112.5MPa. mm; The hardening film-shaped adhesive has the following characteristics: When the film-shaped adhesive before curing is laminated to form a laminated body having a total thickness of 200 μm, the elongation at break of the laminated body is 1% to 2000%, It is preferably 30% to 1200%, more preferably 40% to 1100%, particularly preferably 45% to 1050%, and has the following characteristics: the breaking strength of the aforementioned laminated body is 0.1 MPa to 17 MPa, and preferably 0.2 MPa to 15 MPa, more preferably 0.4 MPa to 13 MPa; the aforementioned hardening film-shaped adhesive has the following characteristics: when the film-shaped adhesive before curing is adhered to a semiconductor wafer, the adhesive force becomes 3N / 24mm or more and 15N / 24mm or less, It is preferably 3N / 24mm or more and 11N / 24mm or less, more preferably 4N / 24mm or more and 11N / 24mm or less, and particularly preferably 4N / 24mm or more and 10N / 24mm or less. The hardening film-shaped adhesive has the following characteristics: The value of (the aforementioned elongation at break × the aforementioned breaking strength) is 0.0005 or more and 0.80 or less, preferably 0.0006 or more and 0.50 or less, and more preferably 0.0007 or more and 0.10 or less.

作為另一態樣,本發明之一實施形態之膜狀接著劑複合片係於支持片上設置有硬化性的膜狀接著劑,並且前述支持片具有基材,前述支持片的厚度為20μm至200μm,較佳為25μm至150μm,更佳為30μm至100μm,尤佳為38μm至80μm;前述基材為由聚對苯二甲酸乙二酯所構成之基材;前述硬化性膜狀接著劑的厚度為1μm至60μm,較佳為3μm至25μm,更佳為5μm至15μm;前述硬化性膜狀接著劑含有:聚合物成分(a),環氧系熱硬化性樹脂(b),以及選自由硬化促進劑(c)、填充材料(d)、偶合劑(e)、交聯劑(f)、能量線硬化性樹脂(g)、光聚合起始劑(h)及通用添加劑(i)所組成之群組中的至少一種成分;前述聚合物成分(a)為丙烯酸系樹脂;前述環氧系熱硬化性樹脂(b)包含選自由雙酚A型環氧樹脂、多官能芳香族型環氧樹脂及二環戊二烯型環氧樹脂所組成之群組中的至少一種樹脂;相對於前述硬化性膜狀接著劑之總質量,前述聚合物成分(a)之含 量為5質量%至85質量%,較佳為7質量%至80質量%;相對於前述聚合物成分(a)之含量100質量份,前述環氧系熱硬化性樹脂(b)之含量為50質量份至1000質量份,較佳為100質量份至900質量份,更佳為150質量份至870質量份;前述支持片的楊氏係數與前述支持片的厚度之積為4MPa.mm至150MPa.mm,較佳為13.6MPa.mm至112.5MPa.mm。 As another aspect, the film-shaped adhesive composite sheet according to an embodiment of the present invention is provided with a hardening film-shaped adhesive on a support sheet, and the support sheet has a substrate, and the thickness of the support sheet is 20 μm to 200 μm. , Preferably 25 μm to 150 μm, more preferably 30 μm to 100 μm, particularly preferably 38 μm to 80 μm; the aforementioned substrate is a substrate composed of polyethylene terephthalate; and the thickness of the aforementioned hardening film-like adhesive 1 μm to 60 μm, preferably 3 μm to 25 μm, more preferably 5 μm to 15 μm; the aforementioned hardening film-shaped adhesive contains: a polymer component (a), an epoxy-based thermosetting resin (b), and a material selected from the group consisting of hardening Composition of accelerator (c), filler (d), coupling agent (e), cross-linking agent (f), energy ray hardening resin (g), photopolymerization initiator (h), and general additive (i) At least one component of the group; the polymer component (a) is an acrylic resin; the epoxy-based thermosetting resin (b) includes a resin selected from a bisphenol A-type epoxy resin and a polyfunctional aromatic epoxy At least one resin in the group consisting of resin and dicyclopentadiene epoxy resin; The total mass of the curable film-shaped adhesive is that the content of the polymer component (a) is 5 to 85% by mass, preferably 7 to 80% by mass; The content is 100 parts by mass, and the content of the epoxy-based thermosetting resin (b) is 50 to 1,000 parts by mass, preferably 100 to 900 parts by mass, and more preferably 150 to 870 parts by mass; The product of the Young's coefficient of the support sheet and the thickness of the aforementioned support sheet is 4 MPa. mm to 150MPa. mm, preferably 13.6 MPa. mm to 112.5MPa. mm.

作為另一態樣,本發明之一實施形態之半導體裝置的製造方法係包含有:將上述膜狀接著劑複合片經由前述膜狀接著劑而貼附於經分割之複數個半導體晶片;針對貼附於前述半導體晶片之前述膜狀接著劑複合片中之前述支持片,從與設置有前述膜狀接著劑之側為相反之側隔著前述支持片對前述膜狀接著劑施力,藉此將前述膜狀接著劑切斷;以及將前述半導體晶片及貼附於前述半導體晶片之切斷後之前述膜狀接著劑從前述支持片分離。 As another aspect, a method for manufacturing a semiconductor device according to an embodiment of the present invention includes: attaching the film-shaped adhesive composite sheet to a plurality of divided semiconductor wafers through the film-shaped adhesive; The support sheet in the film-shaped adhesive composite sheet attached to the semiconductor wafer is urged to the film-shaped adhesive through the support sheet from the side opposite to the side on which the film-shaped adhesive is provided, whereby Cutting the film-shaped adhesive; and separating the semiconductor wafer and the film-shaped adhesive adhered to the semiconductor wafer from the support sheet.

前述製造方法亦可進一步包含有:藉由前述膜狀接著劑將從前述支持片分離之半導體晶片於基板之電路面晶粒接著;以及視需要對前述半導體晶片再者積層一個以上之半導體晶片,進行打線接合後,藉由樹脂將總體密封,藉此獲得半導體封裝。 The manufacturing method may further include: bonding the semiconductor wafer separated from the support sheet to the circuit surface die of the substrate by the film-shaped adhesive; and laminating more than one semiconductor wafer on the semiconductor wafer, if necessary, After the wire bonding is performed, the whole is sealed with a resin, thereby obtaining a semiconductor package.

[實施例] [Example]

以下,藉由具體實施例對本發明進行更詳細說明。然而,本發明不受以下所示之實施例之任何限定。 Hereinafter, the present invention will be described in more detail through specific examples. However, this invention is not limited at all by the Example shown below.

以下示出用於製造接著劑組成物之成分。 The components for producing the adhesive composition are shown below.

.聚合物成分 . Polymer composition

(a)-1:丙烯酸系樹脂(日本合成化學工業公司製造之「Coponyl N-2359-6」)。 (a) -1: Acrylic resin ("Coponyl N-2359-6" manufactured by Nippon Synthetic Chemical Industry Co., Ltd.).

.環氧樹脂 . Epoxy resin

(b1)-1:液狀雙酚A型環氧樹脂(三菱化學公司製造之「JER834」,環氧當量250g/eq,重量平均分子量470)。 (b1) -1: Liquid bisphenol A type epoxy resin ("JER834" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 250 g / eq, weight average molecular weight 470).

(b1)-2:多官能芳香族型(三聯苯型)環氧樹脂(日本化藥公司製造之「EPPN-502H」,環氧當量167g/eq,軟化點54℃,重量平均分子量1200)。 (b1) -2: Polyfunctional aromatic type (terphenyl) epoxy resin ("EPPN-502H" manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent 167 g / eq, softening point 54 ° C, weight average molecular weight 1200).

(b1)-5:二環戊二烯型環氧樹脂(ADEKA公司製造之「ADEKA RESIN EP-4088L」,環氧當量165g/eq)。 (b1) -5: Dicyclopentadiene type epoxy resin ("ADEKA RESIN EP-4088L" manufactured by ADEKA Corporation, epoxy equivalent 165 g / eq).

.熱硬化劑 . Heat hardener

(b2)-1聯苯型酚樹脂(明和化成公司製造之「MEH-7851-SS」,軟化點67℃)。 (b2) -1 Biphenyl type phenol resin ("MEH-7851-SS" manufactured by Meiwa Chemical Co., Ltd., softening point: 67 ° C).

.硬化促進劑 . Hardening accelerator

(c)-1:2-苯基-4,5-二羥基甲基咪唑(四國化成工業公司製造之「Curezol 2PHZ」)。 (c) -1: 2-phenyl-4,5-dihydroxymethylimidazole ("Curezol 2PHZ" manufactured by Shikoku Chemical Industry Co., Ltd.).

.填充材料 . Filler

(d)-1:球狀二氧化矽(Admatechs公司製造之「SC2050」)。 (d) -1: Spherical silicon dioxide ("SC2050" manufactured by Admatechs).

.偶合劑 . Coupling agent

(e)-1:矽烷偶合劑,3-縮水甘油氧基丙基甲基二乙氧 基矽烷(信越矽酮公司製造之「KBE-402」)。 (e) -1: Silane coupling agent, 3-glycidyloxypropylmethyldiethoxysilane ("KBE-402" manufactured by Shin-Etsu Silicone).

<支持片的製造> <Manufacture of support sheet>

以下示出用於製造膜狀接著劑複合片之支持片。 A support sheet for producing a film-like adhesive composite sheet is shown below.

支持片(1):準備將使丙烯酸-2-乙基己酯(以下簡稱為「2EHA」)(65質量份)、甲基丙烯酸甲酯(以下簡稱為「MMA」)(25質量份)及丙烯酸-2-羥基乙酯(以下簡稱為「HEA」)(10質量份)共聚合而成之丙烯酸系樹脂(重量平均分子量400000,玻璃轉移溫度-28℃)((a)-2)250質量份以及交聯劑((f)-1:BHS-8515:商品名,東洋油墨製造公司製造,甲苯二異氰酸酯系化合物)50.27質量份溶解於甲苯175.13部中之溶液,將前述溶液以塗膜的厚度成為20μm之方式塗敷於作為基材之Lintec公司製造之輕剝離片(製品名「SP-PET38 1031」(厚度:38μm)。將上述塗膜積層4次後將基材剝離,製成厚度80μm之支持片(1)。 Support sheet (1): Prepare 2-ethylhexyl acrylate (hereinafter referred to as "2EHA") (65 parts by mass), methyl methacrylate (hereinafter referred to as "MMA") (25 parts by mass), and Acrylic resin (weight average molecular weight 400,000, glass transition temperature -28 ° C) ((a) -2) 250 mass by copolymerization of 2-hydroxyethyl acrylate (hereinafter referred to as "HEA") (10 parts by mass) Parts and cross-linking agent ((f) -1: BHS-8515: trade name, manufactured by Toyo Ink Manufacturing Co., toluene diisocyanate-based compound) 50.27 parts by mass of a solution dissolved in 175.13 parts of toluene, and the aforementioned solution was coated with A light release sheet (product name "SP-PET38 1031" (thickness: 38 µm)) manufactured by Lintec Corporation as a substrate was applied so as to have a thickness of 20 μm. The substrate was peeled after the above coating film was laminated four times to obtain a thickness. 80 μm support sheet (1).

支持片(2):低密度PE(Polyethylene;聚乙烯)/PP(Polypropylene;聚丙烯)/低密度PE之兩種三層基材且總厚80μm,並且單面平滑且具有光澤,另一單面以抗黏連(blocking)為目的而經緞紋加工之複數層塑膠片。 Support sheet (2): low density PE (Polyethylene; polyethylene) / PP (Polypropylene; polypropylene) / low density PE two three-layer substrates with a total thickness of 80 μm, and one side is smooth and shiny, the other single The surface is a plurality of plastic sheets with satin processing for the purpose of blocking resistance.

支持片(3):Lintec公司製造之輕剝離片(製品名「SP-PET38 1031」,厚度38μm)。 Support sheet (3): a light release sheet (product name "SP-PET38 1031", thickness: 38 m) manufactured by Lintec.

支持片(4):Lintec公司製造之輕剝離片(製品名「SP-PET50 1031」,厚度50μm)。 Support sheet (4): a light release sheet (product name "SP-PET50 1031", thickness 50 μm) manufactured by Lintec.

支持片(5):將由丙烯酸2-乙基己酯82份、丙烯酸3份及丙烯醯胺15份所構成之調配混合物於乙酸乙酯100份中進行溶液聚合而獲得數量平均分子量700,000之丙烯酸系共聚物聚合物。繼而,於該所得之聚合物100份中添加酯系塑化劑(大日本油墨化學工業公司製造,對苯二甲酸二辛酯)20份、三聚氰胺系交聯劑(大日本油墨化學工業公司製造,J-820-60N)0.1份及異氰酸酯交聯劑(日本聚胺基甲酸酯工業公司製造,Coronate HL)3份,以塗膜的厚度成為20μm之方式塗敷於Lintec公司製造之輕剝離片(製品名「SP-PET38 1031」(厚度:38μm)。將上述塗膜積層4次後,將剝離膜去除,使用與製作前述支持片(1)相同之材料而形成厚度20μm之塗膜,將該塗膜積層於先製作之80μm之塗膜兩面,製成總厚120μm之支持片(5)。 Support sheet (5): A solution mixture of 82 parts of 2-ethylhexyl acrylate, 3 parts of acrylic acid, and 15 parts of acrylamide was subjected to solution polymerization in 100 parts of ethyl acetate to obtain an acrylic system having a number average molecular weight of 700,000. Copolymer polymer. Next, to 100 parts of the obtained polymer, 20 parts of an ester-based plasticizer (made by Dainippon Ink Chemical Industry Co., Ltd., dioctyl terephthalate) and a melamine-based crosslinking agent (made by Dainippon Ink Chemical Industry Co., Ltd.) were added. , J-820-60N) 0.1 part and isocyanate cross-linking agent (manufactured by Polyurethane Industry Co., Ltd., Japan, Coronate HL) 3 parts, coated with light peeling made by Lintec company so that the thickness of the coating film becomes 20 μm Sheet (product name "SP-PET38 1031" (thickness: 38 μm). After the above-mentioned coating film is laminated four times, the release film is removed, and a coating film having a thickness of 20 μm is formed using the same material as the above-mentioned support sheet (1). This coating film was laminated on both surfaces of the previously prepared 80 μm coating film to form a support sheet (5) with a total thickness of 120 μm.

支持片(6):準備將前述丙烯酸系樹脂((a)-2)250質量份、前述交聯劑((f)-1)50.27質量份溶解於甲苯175.13份中之溶液,將前述溶液以塗膜的厚度成為20μm之方式塗敷於作為基材之Lintec公司製造之輕剝離片(製品名「SP-PET38 1031」(厚度:38μm)。剝離基材而僅剩塗膜後,將該塗膜作為厚度20μm之支持片(6)。 Support sheet (6): A solution prepared by dissolving 250 parts by mass of the acrylic resin ((a) -2) and 50.27 parts by mass of the crosslinking agent ((f) -1) in 175.13 parts of toluene, and preparing the solution in The thickness of the coating film was applied to a light release sheet (product name "SP-PET38 1031" (thickness: 38 µm)) manufactured by Lintec Corporation so that the thickness of the coating film was 20 μm. After the substrate was peeled off and only the coating film remained, the coating was applied. The film was used as a support sheet (6) with a thickness of 20 μm.

支持片(7):Lintec公司製造之輕剝離片(製品名「SP-PET75 1031」,厚度75μm)。 Support sheet (7): a light release sheet (product name "SP-PET75 1031", thickness 75 μm) manufactured by Lintec.

支持片(8):Lintec公司製造之輕剝離片(製品名「SP-PET100 1031」,厚度100μm)。 Support sheet (8): a light release sheet (product name "SP-PET100 1031", thickness 100 μm) manufactured by Lintec.

<支持片之評價> <Evaluation of support film>

將上述所得之各支持片以寬度為15.0mm、長度為約150mm之長方形切出作為試片。 Each support sheet obtained above was cut out as a test piece with a rectangular shape having a width of 15.0 mm and a length of about 150 mm.

使用萬能試驗機(島津製作所(股)製造:Autograph AG-IS 500N),參考JIS K7127:1999,以夾具間為100mm、拉伸速度為200mm/min而進行楊氏係數測定。 The Young's coefficient was measured using a universal testing machine (manufactured by Shimadzu Corporation: Autograph AG-IS 500N), referring to JIS K7127: 1999, with 100 mm between fixtures and 200 mm / min tensile speed.

<膜狀接著劑複合片的製造> <Manufacture of film-shaped adhesive compound sheet>

[實施例1] [Example 1]

(接著劑組成物的製造) (Manufacture of adhesive composition)

使聚合物成分(a)-1(10.30質量份)、環氧樹脂(b1)-1(26.46質量份)、環氧樹脂(b1)-3(16.45質量份)、熱硬化劑(b2)-1(36.21質量份)、硬化促進劑(c)-1(0.22質量份)、填充材料(d)-1(9.36質量份)以及矽烷偶合劑(e)-1(1.00質量份)溶解或分散於甲基乙基酮中,於23℃攪拌,藉此獲得固形物濃度為60質量%之接著劑組成物作為接著劑組成物。 Polymer component (a) -1 (10.30 parts by mass), epoxy resin (b1) -1 (26.46 parts by mass), epoxy resin (b1) -3 (16.45 parts by mass), and thermosetting agent (b2)- 1 (36.21 parts by mass), hardening accelerator (c) -1 (0.22 parts by mass), filler (d) -1 (9.36 parts by mass), and silane coupling agent (e) -1 (1.00 parts by mass) are dissolved or dispersed By stirring in methyl ethyl ketone at 23 ° C., an adhesive composition having a solid content concentration of 60% by mass was obtained as an adhesive composition.

(膜狀接著劑複合片的製造) (Manufacture of film-like adhesive composite sheet)

於聚對苯二甲酸乙二酯製膜之單面經剝離處理的剝離膜(Lintec公司製造之「SP-PET38 1031」,厚度38μm)之剝離處理面,塗佈上述所得之接著劑組成物,於110℃進行3分鐘乾燥,藉此形成厚度為10μm之膜狀接著劑。繼而,於該膜狀接著劑之露出面貼合支持片(1)(厚度38μm)之單面,藉此獲得膜狀接著劑複合片。 Apply the adhesive composition obtained above to the release-treated side of a release film ("SP-PET38 1031" manufactured by Lintec Corporation, having a thickness of 38 μm) on one side of a polyethylene terephthalate film. After drying at 110 ° C for 3 minutes, a film-shaped adhesive having a thickness of 10 µm was formed. Then, a single surface of the support sheet (1) (thickness: 38 μm) was bonded to the exposed surface of the film-shaped adhesive to obtain a film-shaped adhesive composite sheet.

[實施例2] [Example 2]

將實施例1所用之支持片(1)換成支持片(2),將支持片(2)之光澤面之側貼合於膜狀接著劑之露出面,除了此方面以外,利用與實施例1相同之方法而製造膜狀接著劑複合片。 The support sheet (1) used in Example 1 was replaced with a support sheet (2), and the side of the glossy surface of the support sheet (2) was bonded to the exposed surface of the film-shaped adhesive. 1 The same method was used to produce a film-like adhesive composite sheet.

[實施例3] [Example 3]

將實施例1中所用之支持片(1)換成支持片(3),將支持片(3)之剝離處理面之側貼合於膜狀接著劑之露出面,除了此方面以外,利用與實施例1相同之方法而製造膜狀接著劑複合片。 The support sheet (1) used in Example 1 was replaced with the support sheet (3), and the side of the release-treated surface of the support sheet (3) was bonded to the exposed surface of the film-shaped adhesive. A film-like adhesive composite sheet was produced in the same manner as in Example 1.

[實施例4] [Example 4]

將實施例3中所用之支持片(3)換成支持片(4),除了此方面以外,利用與實施例3相同之方法而製造膜狀接著劑複合片。 The support sheet (3) used in Example 3 was replaced with a support sheet (4). Except for this point, a film-like adhesive composite sheet was produced by the same method as in Example 3.

[比較例1] [Comparative Example 1]

將實施例1中所用之支持片(1)換成支持片(5),將支持片(5)之單面貼合於膜狀接著劑之露出面,除了此方面以外,利用與實施例1相同之方法而製造膜狀接著劑複合片。 The support sheet (1) used in Example 1 was replaced with the support sheet (5), and the single side of the support sheet (5) was bonded to the exposed surface of the film-shaped adhesive. In the same manner, a film-like adhesive composite sheet was produced.

[比較例2] [Comparative Example 2]

將實施例1中所用之支持片(1)換成支持片(6),將支持片(6)之單面貼合於膜狀接著劑之露出面,除了此方面以外,利用與實施例1相同之方法而製造膜狀接著劑複合片。 The support sheet (1) used in Example 1 was replaced with a support sheet (6), and the single side of the support sheet (6) was bonded to the exposed surface of the film-shaped adhesive. In the same manner, a film-like adhesive composite sheet was produced.

[比較例3] [Comparative Example 3]

將實施例3中所用之支持片(3)換成支持片(7),除了此方面以外,利用與實施例3相同之方法而製造膜狀接著劑複合片。 The support sheet (3) used in Example 3 was replaced with a support sheet (7). Except for this point, a film-like adhesive composite sheet was produced by the same method as in Example 3.

[比較例4] [Comparative Example 4]

將實施例3中所用之支持片(3)換成支持片(8),除了此方面以外,利用與實施例3相同之方法而製造膜狀接著劑複合片。 The support sheet (3) used in Example 3 was replaced with a support sheet (8). Except for this point, a film-like adhesive composite sheet was produced by the same method as in Example 3.

<膜狀接著劑複合片之評價> <Evaluation of film-shaped adhesive compound sheet>

針對上述所得之各實施例及比較例之膜狀接著劑複合片,評價下述項目。 The following items were evaluated about the film-like adhesive composite sheets of each of the examples and comparative examples obtained above.

(利用銷之上頂之拾取適性之評價) (Evaluation of the pick-up suitability using the pin top)

將8吋之矽晶圓單片化為2mm×2mm、厚度50μm之晶片。繼而,使用層壓機,將膜狀接著劑複合片之膜狀接著劑加熱至60℃,於前述晶片之乾式拋光面貼合該經加熱之膜狀接著劑。藉由以上操作而獲得將一片膜狀接著劑複合片貼附於多數個矽晶片之試驗用片。 The 8-inch silicon wafer was singulated into 2 mm × 2 mm wafers with a thickness of 50 μm. Next, using a laminator, the film-shaped adhesive of the film-shaped adhesive composite sheet was heated to 60 ° C., and the heated film-shaped adhesive was bonded to the dry polishing surface of the wafer. By the above operation, a test sheet in which a film-shaped adhesive compound sheet was attached to a plurality of silicon wafers was obtained.

繼而,針對該試驗用片,使用拾取裝置(Canon Machinery公司製造之「BESTEM-D02」),於上頂量300μm、上頂速度20mm/min、抬升等待時間1s之條件下,藉由單銷上頂方式進行27次拾取。然後,於成功地拾取26次以上之情形時判定為拾取適性良好,於除此以外之情形時判定為拾取適性不良。將結果示於表1中。 Next, for this test piece, a pick-up device ("BESTEM-D02" manufactured by Canon Machinery Co., Ltd.) was used, under the conditions of a jacking amount of 300 μm, a jacking speed of 20 mm / min, and a lifting waiting time of 1 s. The top mode makes 27 picks. Then, it was judged that the picking suitability was good when it was successfully picked up more than 26 times, and it was judged that it was poor in picking suitability in other cases. The results are shown in Table 1.

(斷裂伸長率(C)之測定) (Measurement of elongation at break (C))

使用層壓機將兩片膜狀接著劑(厚度20μm)於60℃加熱並貼合,再者同樣地貼合相同之膜狀接著劑,重複上述操作而製作合計厚度為200μm之將膜狀接著劑積層而成之積層體。 Using a laminator, heat two sheets of film-shaped adhesive (thickness: 20 μm) at 60 ° C. and stick them together. Then apply the same film-shaped adhesive similarly. Repeat the above operation to make a film thickness of 200 μm. Laminated body made of layers.

繼而,使用經加熱至80℃之加熱板,將所得之積層體加熱30秒鐘。繼而,使用超級切割機(荻野精機製作所製造之「PH1-600」),將該經加熱之積層體於10秒以內裁斷,製作寬度15mm、長度100mm、厚度200μm之試片。於裁斷 時間超過10秒之情形時,暫且中止裁斷,使用經加熱至80℃之加熱板,一邊將裁斷中之前述積層體再次加熱一邊於10秒以內裁斷,製作試片。如此般將前述積層體於加熱後裁斷之原因在於:使試片之端部不產生導致斷裂之缺損部。 Then, using a heating plate heated to 80 ° C., the obtained laminated body was heated for 30 seconds. Then, using a super cutting machine ("PH1-600" manufactured by Takino Seiki Seisakusho), the heated laminated body was cut out within 10 seconds to produce test pieces having a width of 15 mm, a length of 100 mm, and a thickness of 200 μm. When the cutting time exceeds 10 seconds, the cutting is temporarily suspended, and a heating plate heated to 80 ° C is used to cut the laminated body within 10 seconds while heating the cutting body again to produce a test piece. The reason why the laminated body is cut after heating in this way is that the end portion of the test piece does not generate a defect portion that causes breakage.

繼而,針對所得之試片,依據JIS K7161-1994測定斷裂伸長率。更具體而言如以下所述。 Then, the elongation at break of the obtained test piece was measured in accordance with JIS K7161-1994. More specifically, it is as follows.

亦即,使用萬能試驗機(島津製作所製造之「Autograph AG-IS 500N」),藉由該萬能試驗機之固定夾具將前述試片於兩處固定。此時,將固定夾具之頂端部間之距離(試片之露出部位之長度、固定部位間之距離)設為75mm。 That is, a universal testing machine ("Autograph AG-IS 500N" manufactured by Shimadzu Corporation) was used, and the aforementioned test piece was fixed at two places by the fixing jig of the universal testing machine. At this time, the distance between the tip portions of the fixing jig (the length of the exposed portion of the test piece and the distance between the fixed portions) was set to 75 mm.

繼而,將拉伸速度設為200mm/min,於該固定部位間拉伸試片,求出試片之斷裂伸長率作為斷裂伸長率(C)(%)。 Next, the tensile speed was set to 200 mm / min, and the test piece was stretched between the fixed portions, and the elongation at break of the test piece was determined as the elongation at break (C) (%).

實施例1至實施例4以及比較例1至比較例4中所用之膜狀接著劑之斷裂伸長率(C)均相同,為900%。 The film-like adhesives used in Examples 1 to 4 and Comparative Examples 1 to 4 all had the same elongation at break (C), which was 900%.

(斷裂強度(D)之測定) (Measurement of breaking strength (D))

於測定上述斷裂伸長率(C)時,測定試片斷裂(被破壞)時之拉伸應力亦即拉伸破壞應力,將該測定值作為斷裂強度(D)(MPa)。 When the elongation at break (C) is measured, the tensile stress at which the test piece is broken (broken), that is, the tensile breaking stress is measured, and the measured value is taken as the breaking strength (D) (MPa).

實施例1至實施例4以及比較例1至比較例4中所用之膜狀接著劑之斷裂強度(D)均相同,為0.5MPa。 The breaking strength (D) of the film adhesives used in Examples 1 to 4 and Comparative Examples 1 to 4 were all the same and were 0.5 MPa.

(膜狀接著劑與半導體晶片之接著力(E)之測定) (Measurement of adhesion (E) between film adhesive and semiconductor wafer)

將膜狀接著劑複合片裁斷成24mm×300mm之大小,將膜狀接著劑加熱至60℃,對該膜狀接著劑貼附賽璐玢膠帶(Nichiban公司製造之「Cellotape(註冊商標)No.405」,寬度24mm)之黏著面。繼而,使基材從膜狀接著劑剝離,將露出之膜狀接著劑加熱至60℃,保持該狀態而貼附於6吋之矽晶圓(厚度350μm)之乾式拋光面,藉此獲得依序積層有賽璐玢膠帶、膜狀接著劑及矽晶圓之積層體作為試片。 The film-shaped adhesive composite sheet was cut into a size of 24 mm × 300 mm, the film-shaped adhesive was heated to 60 ° C., and the film-shaped adhesive was attached with a celluloid tape (“Cellotape (registered trademark) No. 405 ", width 24mm). Then, the substrate was peeled from the film-shaped adhesive, and the exposed film-shaped adhesive was heated to 60 ° C, and the dry polishing surface of a 6-inch silicon wafer (thickness: 350 μm) was attached while maintaining the state, thereby obtaining The laminated body of the celluloid tape, the film adhesive and the silicon wafer was used as a test piece.

將所得之積層體立即於23℃、相對濕度50%之環境下(JIS Z0237 2009所規定之標準環境下)放置30分鐘後,進行所謂180°剝離,亦即,以膜狀接著劑及矽晶圓之互相接觸之面彼此成180°之角度之方式,以剝離速度150mm/min從矽晶圓分離將膜狀接著劑及賽璐玢膠帶積層而成之積層片,測定此時之剝離力,將該測定值作為膜狀接著劑與半導體晶片之接著力E(N/24mm)。 The obtained laminated body was immediately left in an environment of 23 ° C. and a relative humidity of 50% (under a standard environment prescribed by JIS Z0237 2009) for 30 minutes, and then subjected to so-called 180 ° peeling, that is, using a film adhesive and silicon crystals. Laminated sheets formed by laminating film adhesives and cellophane tapes from a silicon wafer at a peeling speed of 150 mm / min so that the contact surfaces of the circles are at an angle of 180 ° with each other, and measure the peeling force at this time. This measured value was made into the adhesive force E (N / 24mm) of a film adhesive and a semiconductor wafer.

實施例1至實施例4以及比較例1至比較例4中所用之膜狀接著劑與半導體晶片之接著力(E)均相同,為10N/24mm。 The film-like adhesive used in Examples 1 to 4 and Comparative Examples 1 to 4 and the adhesive force (E) of the semiconductor wafer were all the same, and were 10 N / 24 mm.

另外,若根據這些測定結果來求E/(C×D),則為0.022(N/24mm/(%.MPa))。 In addition, when E / (C × D) was obtained from these measurement results, it was 0.022 (N / 24mm / (%. MPa)).

由上述結果表明,實施例1至實施例4之膜狀接著劑複合片係支持片的楊氏係數(A)(MPa)及支持片的厚度(B)(mm)之積(A×B)處於4MPa.mm至150MPa.mm之範圍,對於貼附有這些片之膜狀接著劑之矽晶片而言,藉由單銷上頂方式,即便不另行設置以膜狀接著劑之切斷為主要目的之步驟,亦可一邊抑制步驟異常之產生一邊將膜狀接著劑切斷。再者,可一邊抑制步驟異常之產生,一邊將貼附有切斷後之膜狀接著劑之矽晶片從支持片分離。如此,實施例1至實施例4之膜狀接著劑複合片於單銷上頂方式中顯示出良好之拾取適性。 The above results indicate that the product of the Young's coefficient (A) (MPa) and the thickness (B) (mm) of the support sheet of the film-like adhesive composite sheet of Examples 1 to 4 is (A × B) At 4MPa. mm to 150MPa. In the range of mm, for the silicon wafer to which the film-shaped adhesives of these sheets are attached, the single-pin top-up method can be used even if the main purpose of cutting the film-shaped adhesive is not separately provided. The film-like adhesive is cut while suppressing the occurrence of step abnormalities. In addition, the silicon wafer to which the cut-off film-shaped adhesive is attached can be separated from the support sheet while suppressing the occurrence of step abnormalities. In this way, the film-like adhesive composite sheets of Examples 1 to 4 exhibited good picking suitability in the single-pin top-up method.

相對於此,比較例1至比較例4之膜狀接著劑複合片係支持片的楊氏係數(A)(MPa)及支持片的厚度(B)(mm)之積(A×B)小於4MPa.mm或超過150MPa.mm,不滿足前述範圍。而且,貼附有這些片之膜狀接著劑之矽晶片於從膜狀接著劑之切斷至附有膜狀接著劑之矽晶片從支持片分離為止的期間中,步驟異常之產生次數多,拾取適性不良。 In contrast, the product (A × B) of the Young's coefficient (A) (MPa) and the thickness (B) (mm) of the support sheet of the film-like adhesive composite sheet of Comparative Examples 1 to 4 is less than 4MPa. mm or more than 150MPa. mm, does not satisfy the aforementioned range. In addition, the silicon wafer to which the film-shaped adhesive on these sheets are attached has a large number of abnormalities in the period from the cutting of the film-shaped adhesive to the separation of the silicon wafer with the film-shaped adhesive from the support sheet. Poor adaptability.

(產業可利用性) (Industrial availability)

本發明可用於製造半導體裝置,故而於產業上極為有用。 Since the present invention can be used for manufacturing a semiconductor device, it is extremely useful in industry.

Claims (3)

一種膜狀接著劑複合片,係於支持片上設置有硬化性的膜狀接著劑;前述支持片具有基材;前述硬化性膜狀接著劑的厚度為1μm至60μm;前述支持片的楊氏係數及前述支持片的厚度之積為4MPa.mm至150MPa.mm。     A film-shaped adhesive composite sheet is provided on a supporting sheet with a hardening film-shaped adhesive; the supporting sheet has a substrate; the thickness of the hardening film-shaped adhesive is 1 μm to 60 μm; and the Young's coefficient of the supporting sheet And the product of the thickness of the aforementioned support sheet is 4 MPa. mm to 150MPa. mm.     如請求項1所記載之膜狀接著劑複合片,其中前述膜狀接著劑具有以下特性:於將硬化前之前述膜狀接著劑積層而製成合計厚度成為200μm之積層體時,前述積層體之斷裂伸長率成為1%至2000%。     The film-shaped adhesive composite sheet according to claim 1, wherein the film-shaped adhesive has the following characteristics: when the film-shaped adhesive before curing is laminated to form a laminated body having a total thickness of 200 μm, the laminated body The elongation at break becomes 1% to 2000%.     一種半導體裝置的製造方法,係使用如請求項1所記載之膜狀接著劑複合片,並且包含有:將前述膜狀接著劑複合片經由前述膜狀接著劑而貼附於經分割之複數個半導體晶片;針對貼附於前述半導體晶片之前述膜狀接著劑複合片中之前述支持片,從與設置有前述膜狀接著劑之側為相反之側隔著前述支持片對前述膜狀接著劑施力,藉此將前述膜狀接著劑切斷;以及將前述半導體晶片及貼附於前述半導體晶片之切斷後之前述膜狀接著劑從前述支持片分離。     A method for manufacturing a semiconductor device, comprising using the film-like adhesive composite sheet according to claim 1, and including attaching the film-like adhesive composite sheet to a plurality of divided pieces through the film-like adhesive. Semiconductor wafer; for the support sheet in the film-shaped adhesive composite sheet attached to the semiconductor wafer, the film-shaped adhesive is interposed from the side opposite to the side on which the film-shaped adhesive is provided via the support sheet. By applying force, the film-shaped adhesive is cut; and the semiconductor wafer and the film-shaped adhesive adhered to the semiconductor wafer are separated from the support sheet.    
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