JP7143951B2 - semiconductor module - Google Patents

Description

The present invention relates to semiconductor modules.

Patent Literature 1 describes a semiconductor module having a crystal oscillator, a housing member, and a semiconductor element. At least a part of the upper surface of the housing member is made of a metal member, and the housing member houses the crystal oscillator in the internal space. A semiconductor element is laminated on the housing member so as to cover the metal member.

Japanese Unexamined Patent Application Publication No. 2010-10480

In a semiconductor module in which a semiconductor element is stacked on a housing member, when heat is applied, the semiconductor element may be deformed according to the difference in thermal expansion coefficient between the semiconductor element and the housing member. . When the semiconductor element is deformed, there is a possibility that the temperature characteristics of the semiconductor element will change.

An object of the present invention is to provide a semiconductor module capable of suppressing deformation of a semiconductor element when heat is applied.

A semiconductor module according to one aspect of the present invention includes a first substrate, electronic components mounted on the first substrate, an upper plate provided on the first substrate and covering the electronic components, and a periphery of the upper plate. a semiconductor element facing the upper plate and having an area larger than that of the first cap in plan view from a direction perpendicular to the first substrate; and an adhesive member provided between the first cap and the semiconductor element and formed with a fillet that spreads from the first cap toward the semiconductor element.

According to the semiconductor module of the present invention, deformation of the semiconductor element when heat is applied can be suppressed.

FIG. 1 is a cross-sectional view showing the configuration of a semiconductor module according to the first embodiment. FIG. 2 is a cross-sectional view showing a laminated structure of a crystal oscillator, a first housing member, and a semiconductor element. FIG. 3 is a plan view schematically showing the relationship among the crystal oscillator, the first housing member, the adhesive member, and the semiconductor element. FIG. 4 is a graph showing changes in the amount of warpage of the semiconductor element before and after the reflow process in the semiconductor module according to the example. FIG. 5 is a graph showing changes in the amount of warpage of a semiconductor element before and after a reflow process in a semiconductor module according to a comparative example. FIG. 6 is a cross-sectional view showing a laminated structure of a crystal oscillator, a first housing member, and a semiconductor element of a semiconductor module according to the second embodiment. FIG. 7 is a plan view schematically showing a semiconductor module according to the third embodiment.

BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of a semiconductor module according to the present invention will be described in detail below with reference to the drawings. It should be noted that the present invention is not limited by this embodiment. Each embodiment is an example, and it goes without saying that partial substitutions or combinations of configurations shown in different embodiments are possible. In the second and subsequent embodiments, descriptions of matters common to the first embodiment will be omitted, and only different points will be described. In particular, similar actions and effects due to similar configurations will not be mentioned sequentially for each embodiment.

(First embodiment)
FIG. 1 is a cross-sectional view showing the configuration of a semiconductor module according to the first embodiment. As shown in FIG. 1 , the semiconductor module 10 has a first housing member 12 , a crystal oscillator 20 , an adhesive member 30 , a semiconductor element 40 and a second housing member 50 . The semiconductor module 10 according to the first embodiment is, for example, a Temperature Compensated Crystal Oscillator (hereinafter sometimes referred to as "TCXO") equipped with a crystal oscillator 20 as an electronic component.

The first housing member 12 includes a first substrate 13 and a first cap 14 . The first substrate 13 is a flat insulating substrate, such as a ceramic substrate such as an alumina substrate. The first cap 14 is a concave metal housing, and is open on the first substrate 13 side (lower side). An iron-nickel alloy (Fe-42Ni), for example, is used as the material of the first cap 14 . Crystal oscillator 20 is provided in a space surrounded by first substrate 13 and first cap 14 .

The semiconductor element 40 is stacked on the first housing member 12 so as to cover the first cap 14 of the first housing member 12 . The semiconductor element 40 is adhered to the first housing member 12 by the adhesive member 30 . The semiconductor element 40 is, for example, an IC (Integrated Circuit), and includes various circuits such as an oscillation circuit and a temperature compensation circuit that constitute a TCXO. The temperature compensation circuit is a circuit that controls the oscillation frequency of the TCXO to be constant even if the temperature changes.

The adhesive member 30 is, for example, die-bonding resin, and silicone resin is used. The adhesive member 30 is a flexible material that can be deformed when a force is applied, and has a lower tensile modulus than the first cap 14 and the semiconductor element 40 . Note that the adhesive member 30 is not limited to silicone resin, and may be epoxy resin, or a conductive silicone adhesive or epoxy resin containing a conductive filler (metal powder such as silver powder). . A detailed lamination structure of the first housing member 12, the crystal oscillator 20, the adhesive member 30, and the semiconductor element 40 will be described later.

The second receiving member 50 includes a second substrate 51 and a second cap 52 . The second substrate 51 is a flat insulating substrate, such as a ceramic substrate such as an alumina substrate. The first substrate 13 is mounted on the second substrate 51 . That is, the first substrate 13 , the crystal oscillator 20 , the first cap 14 , the adhesive member 30 and the semiconductor element 40 are laminated in this order on the second substrate 51 .

The first substrate 13 and the second substrate 51 are electrically connected via connection terminals 16 and 55 . The same material as that of the first substrate 13 is preferably used for the second substrate 51 . In this case, the difference in thermal expansion coefficient between the second substrate 51 and the first substrate 13 can be suppressed. Therefore, even when heat is applied to the semiconductor module 10, the connection between the second substrate 51 and the first substrate 13 can be ensured. However, the material is not limited to this, and the material of the second substrate 51 may be different from that of the first substrate 13 . Connection terminals 41 provided on the upper surface of the semiconductor element 40 and connection terminals 54 provided on the second substrate 51 are connected via bonding wires 45 . Thereby, the crystal resonator 20 and the semiconductor element 40 are electrically connected to the second substrate 51 .

The second cap 52 is a concave metal housing, and is open on the second substrate 51 side (lower side). The second cap 52 is provided on the second substrate 51 to cover the first housing member 12 , the crystal oscillator 20 and the semiconductor element 40 . In other words, the first housing member 12 , the crystal oscillator 20 and the semiconductor element 40 are arranged in the internal space SP<b>2 surrounded by the second substrate 51 and the second cap 52 . The internal space SP2 is, for example, an inert gas atmosphere such as nitrogen gas.

The second cap 52 has an upper plate 52a, a wall portion 52b, and a flange portion 52c. The upper plate 52 a faces the semiconductor element 40 . The upper plate 52 a is spaced apart from the semiconductor element 40 so as to be in non-contact with the bonding wires 45 . The wall portion 52b surrounds the upper plate 52a. The upper end side of the wall portion 52b is connected to the upper plate 52a. The flange portion 52c is provided on the lower end side of the wall portion 52b and extends in a direction perpendicular to the wall portion 52b. The lower end side of the wall portion 52b and the flange portion 52c are joined to the second substrate 51 by a joining member (not shown). The wall portion 52b is provided apart from the semiconductor element 40 and the first housing member 12 . Moreover, the wall portion 52b is provided apart from the connection terminal 54 so as to be in a non-contact state with the bonding wire 45. As shown in FIG.

In this embodiment, since the semiconductor element 40 is provided so as to overlap the first housing member 12, the area of the second housing member 50 (second substrate 51) can be reduced. A space is provided between the first housing member 12 and the semiconductor element 40 and the inner wall of the second cap 52, and no sealing resin or the like is provided. Therefore, deformation due to the difference in thermal expansion coefficient between the sealing resin and the semiconductor element 40 and breakage of the bonding wires 45 can be suppressed when heat is applied by reflow processing or the like.

Although the crystal oscillator 20 is shown as an electronic component housed in the first housing member 12, it is only an example and is not limited to this. A SAW (Surface Acoustic Wave) filter, a piezoelectric vibration element, a MEMS (Micro Electro Mechanical Systems) vibration element, or the like may be mounted on the semiconductor module 10 of the present embodiment as electronic components.

FIG. 2 is a cross-sectional view showing a laminated structure of a crystal oscillator, a first housing member, and a semiconductor element. 2, the second housing member 50 and the bonding wires 45 are omitted, and the crystal oscillator 20, the first housing member 12, and the semiconductor element 40 are shown enlarged.

As shown in FIG. 2 , a crystal oscillator 20 is provided on the first main surface 13 a of the first substrate 13 . The second main surface 13b of the first substrate 13 is arranged to face the second substrate 51 (see FIG. 1). One end side of the crystal oscillator 20 is electrically connected to the first main surface 13a via the conductive adhesive 21 . The other end side of the crystal oscillator 20 is separated from the first main surface 13a.

The first cap 14 has an upper plate 14a, a wall portion 14b, a flange portion 14c, and a curved portion 14d. The upper plate 14 a faces the first substrate 13 and the crystal oscillator 20 . The upper plate 14 a is arranged apart from the crystal oscillator 20 . In other words, a space is provided between the upper plate 14 a and the crystal oscillator 20 . The wall portion 14b surrounds the upper plate 14a. Moreover, the wall portion 14b is provided apart from the crystal oscillator 20 . The curved portion 14d has a smooth curved surface so as to connect the upper end of the wall portion 14b and the end portion of the upper plate 14a.

The flange portion 14c is provided on the lower end side of the wall portion 14b and extends in a direction perpendicular to the wall portion 14b. The lower end side of the wall portion 14b and the flange portion 14c are joined to the first substrate 13 by a joining member (not shown) such as brazing material. As a result, the first substrate 13 and the first cap 14 are brought into close contact with each other, and the internal space SP1 surrounded by the first substrate 13 and the first cap 14 is sealed. A crystal oscillator 20 is provided in a sealed internal space SP1.

The first cap 14 can be manufactured, for example, by preparing a flat metal plate and forming the metal plate into a concave shape by press working using a die. The upper plate 14a, the wall portion 14b, the flange portion 14c and the curved portion 14d are integrally formed using one material. In addition, the manufacturing method of the 1st cap 14 is not limited to this.

In addition, in FIG. 2, the end of the flange portion 14c and the end of the first substrate 13 are aligned, but the present invention is not limited to this. The end portion of the flange portion 14 c may be located inside the end portion of the first substrate 13 . That is, the area of the first substrate 13 in plan view may be larger than that of the first cap 14 . Further, the first cap 14 may have a configuration in which the flange portion 14c is not provided.

The adhesive member 30 is provided between the first housing member 12 and the semiconductor element 40 . More specifically, the adhesive member 30 covers the upper plate 14 a and the curved portion 14 d of the first cap 14 and also covers the lower surface of the semiconductor element 40 . A fillet 31 that widens from the first cap 14 toward the semiconductor element 40 is formed on the peripheral edge of the adhesive member 30 .

In this embodiment, the semiconductor element 40 has an area larger than that of the first cap 14 in plan view. The semiconductor element 40 has an area at least larger than that of the upper plate 14a. In other words, the semiconductor element 40 has a portion that protrudes outward from the outer periphery of the first cap 14 (end portion of the flange portion 14c). The lower surface of the semiconductor element 40 includes a portion overlapping the upper plate 14a and the curved portion 14d, and a portion outside the upper plate 14a and the curved portion 14d and not overlapping the upper plate 14a and the curved portion 14d. In this specification, the term “planar view” refers to the positional relationship when viewed from a direction perpendicular to the first substrate 13 .

The thickness of the adhesive member 30 is formed substantially constant in the region overlapping the upper plate 14a. The thickness of the adhesive member 30 increases toward the outer periphery of the wall portion 14b in the region overlapping the curved portion 14d. A fillet 31 is formed outside the curved portion 14d, that is, outside the wall portion 14b. The fillet 31 is formed to extend to the peripheral side of the lower surface of the semiconductor element 40, that is, to a portion of the lower surface of the semiconductor element 40 that does not overlap the upper plate 14a and the curved portion 14d. The fillet 31 is formed such that the contact area between the adhesive member 30 and the semiconductor element 40 is larger than the contact area between the adhesive member 30 and the upper plate 14a and the curved portion 14d.

FIG. 3 is a plan view schematically showing the relationship among the crystal oscillator, the first housing member, the adhesive member, and the semiconductor element. FIG. 3 shows a cross-sectional view taken along line III-III' of FIG. However, in FIG. 3, the semiconductor element 40 is indicated by a two-dot chain line, and the fillet 31 portion of the adhesive member 30 is indicated by oblique lines.

As shown in FIG. 3, the crystal oscillator 20 has a rectangular shape in plan view. Corresponding to the crystal oscillator 20, the first housing member 12 (the first substrate 13 and the first cap 14) is also rectangular in plan view. That is, the first housing member 12 has a first long side 12a, a second long side 12b, a first short side 12c and a second short side 12d. The first long side 12a faces the second long side 12b. The first long side 12 a and the second long side 12 b are provided along the longitudinal direction of the crystal oscillator 20 . The first short side 12c faces the second short side 12d. The first short side 12c and the second short side 12d are positioned between the first long side 12a and the second long side 12b. Here, the first long side 12a, the second long side 12b, the first short side 12c, and the second short side 12d match the outer shape of the first substrate 13 in plan view.

The first cap 14 also has a first long side s1, a second long side s2, a first short side s3 and a second short side s4. The first long side s1, the second long side s2, the first short side s3, and the second short side s4 are the outer shape of the wall portion 14b in plan view.

The semiconductor element 40 has an area larger than that of the first housing member 12 and overlaps the first long side 12 a , the second long side 12 b , the first short side 12 c and the second short side 12 d of the first housing member 12 . All of the four sides of the first housing member 12, the crystal oscillator 20, and the adhesive member 30 are positioned inside the outer periphery of the semiconductor element 40 in plan view.

The adhesive member 30 is provided inside the outer periphery of the semiconductor element 40 and in a region overlapping the first housing member 12 . The adhesive member 30 overlaps the first long side 12a, the second long side 12b, the first short side 12c and the second short side 12d, and the first long side 12a, the second long side 12b and the first short side 12c. and the area outside the second short side 12d. In other words, the adhesive member 30 covers the entire area of the upper plate 14a and the curved portion 14d of the first cap 14 .

The fillet 31 is formed outside the wall portion 14b. That is, the fillet 31 is formed in a frame shape along the first long side s1, the second long side s2, the first short side s3 and the second short side s4. The fillet 31 overlaps the first long side 12a, the second long side 12b, the first short side 12c, and the second short side 12d of the first housing member 12, and the first long side 12a and the second long side 12b. , outside the first short side 12c and the second short side 12d.

As an example of a method of forming the adhesive member 30, liquid resin is applied in a predetermined pattern on the upper surface of the upper plate 14a of the first cap 14 using a dispenser. After that, by placing the semiconductor element 40 on the upper plate 14a of the first cap 14, the liquid resin is spread over the entire surface of the upper plate 14a, and a fillet 31 is formed around the outer periphery of the liquid resin. The liquid resin is then cured to form the adhesive member 30 having the fillet 31 .

(Example)
FIG. 4 is a graph showing changes in the amount of warpage of the semiconductor element before and after the reflow process in the semiconductor module according to the example. FIG. 5 is a graph showing changes in the amount of warpage of a semiconductor element before and after a reflow process in a semiconductor module according to a comparative example. The semiconductor module 10 according to the embodiment shown in FIG. 4 has the configuration in which the adhesive member 30 having the fillet 31 is provided between the first cap 14 and the semiconductor element 40 as described above. The semiconductor module according to the comparative example shown in FIG. 5 has a configuration in which a fillet is not formed on the bonding member, that is, a configuration in which the bonding member is provided only in the region overlapping the first cap. The embodiment and the comparative example differ only in the presence or absence of the fillet 31 of the adhesive member 30, and the other configurations (eg, the material of the adhesive member 30, the size of the semiconductor element 40, etc.) and the reflow conditions are the same.

Graph 1 shown in FIG. 4 and graph 2 shown in FIG. 5 show the amount of warpage of the semiconductor element 40 before and after the reflow process, respectively. In graphs 1 and 2, the horizontal axis indicates time, "initial" indicates the time before the reflow process, and "after 48 hours" indicates the time 48 hours after the reflow process. The vertical axis indicates the warp amount of the semiconductor element 40 . The amount of warp indicates a change in the amount of warp of the semiconductor element 40 when left for 48 hours after the reflow process, based on the amount of warp of the semiconductor element 40 at the "initial stage". Three samples A, B, and C in the example, and three samples D, E, and F in the comparative example were examined for changes in the amount of warpage of the semiconductor element 40 .

As shown in FIG. 4, in the semiconductor module 10 of the example, the warpage amounts of samples A, B, and C after the reflow process are 0.01 μm, 0.04 μm, and 0.01 μm, respectively. The average amount of warpage is 0.02 μm. On the other hand, as shown in FIG. 5, in the semiconductor module of the comparative example, the warpage amounts of samples D, E, and F after the reflow process are 0.17 μm, 0.03 μm, and 0.22 μm, respectively. The average amount of warpage is 0.14 μm.

As shown in FIGS. 4 and 5, in the semiconductor module 10 of the example, by providing the adhesive member 30 having the fillet 31, it was shown that the amount of warping of the semiconductor element 40 after the reflow process can be suppressed.

As described above, the semiconductor module 10 of this embodiment has the first substrate 13 , the crystal oscillator 20 (electronic component), the first cap 14 , the semiconductor element 40 and the adhesive member 30 . A crystal oscillator 20 is mounted on the first substrate 13 . The first cap 14 is provided on the first substrate 13 and includes an upper plate 14a covering the crystal oscillator 20 and a wall portion 14b surrounding the upper plate 14a. The semiconductor element 40 is provided to face the upper plate 14a and has an area larger than that of the first cap 14 in plan view from a direction perpendicular to the first substrate 13 . The adhesive member 30 is provided between the first cap 14 and the semiconductor element 40 and has an adhesive member 30 formed with a fillet 31 extending from the first cap 14 toward the semiconductor element 40 .

According to this, even if the semiconductor module 10 is subjected to heat treatment such as reflow treatment, the residual stress generated according to the difference in the coefficient of thermal expansion between the first cap 14 and the semiconductor element 40 is applied to the adhesive member. 30. In addition, since the fillet 31 is formed on the adhesive member 30, the contact area between the adhesive member 30 and the semiconductor element 40 is larger than when the fillet 31 is not formed. Accordingly, when heat is applied, the stress applied to the semiconductor element 40 is dispersed by the adhesive member 30, and the stress generated between the first cap 14 and the semiconductor element 40 is reduced. Thereby, the residual stress of the semiconductor element 40 after the heat treatment can be effectively suppressed. As a result, the semiconductor module 10 can suppress deformation (warping) of the semiconductor element 40 when heat is applied.

For example, in the TCXO, compared to the configuration in which the semiconductor element 40 is provided on the second substrate 51, in the present embodiment, the semiconductor element 40 is arranged over the first housing member 12 and the crystal oscillator 20. , the distance between the semiconductor element 40 and the crystal oscillator 20 can be reduced. As a result, the semiconductor module 10 can improve temperature characteristics. On the other hand, if the semiconductor element 40 warps, the temperature characteristics of the semiconductor element 40 may deteriorate due to the piezoresistive effect. In the present embodiment, as described above, deformation of the semiconductor element 40 is suppressed, so deterioration in temperature characteristics of the semiconductor element 40 can be suppressed.

In the semiconductor module 10, the adhesive member 30 overlaps the four sides surrounding the first cap 14 (the first long side s1, the second long side s2, the first short side s3 and the second short side s4). be provided.

According to this, the semiconductor module 10 can effectively suppress residual stress generated between the first cap 14 and the semiconductor element 40 .

In the semiconductor module 10, the first cap 14 has a curved portion 14d connecting the upper plate 14a and the wall portion 14b, and the bonding member 30 is provided to cover the upper plate 14a and the curved portion 14d.

Accordingly, since the first cap 14 has the curved portion 14d, stress concentration in the first cap 14 can be suppressed compared to a structure in which the upper plate 14a and the wall portion 14b are bent and connected. Further, the adhesive member 30 is formed thicker in the portion overlapping with the curved portion 14d than in the portion overlapping with the upper plate 14a on the inner side of the curved portion 14d. Accordingly, the adhesive member 30 can effectively distribute the stress generated between the first cap 14 and the semiconductor element 40 and suppress deformation of the semiconductor element 40 . Moreover, the fillet 31 is well formed, and the area of the fillet 31 in contact with the semiconductor element 40 can be increased.

The semiconductor module 10 further includes a second substrate 51 on which the first substrate 13 is mounted, and a second cap 52 provided on the second substrate 51 to cover the first substrate 13, the first cap 14, and the semiconductor element 40. and including.

According to this, since the crystal oscillator 20 and the semiconductor element 40 are provided in the internal space SP2 surrounded by the second substrate 51 and the second cap 52, noise leaks to the outside and noise from the outside enters. can be suppressed. Also, the upper surface of the semiconductor element 40 faces the second cap 52 with a space therebetween. In other words, the adhesive member 30 is provided on the lower surface of the semiconductor element 40 , and the resin material such as the adhesive member 30 is not provided on the upper surface of the semiconductor element 40 . Therefore, stress generated in the semiconductor element 40 when heat is applied to the semiconductor module 10 can be suppressed compared to a configuration in which the semiconductor element 40 is sealed with resin.

Also, in the semiconductor module 10, the electronic component is the crystal oscillator 20. As shown in FIG.

According to this, the semiconductor module 10 can constitute a temperature-compensated crystal oscillator.

The shape, thickness, and the like of each component of the semiconductor module 10 are merely examples and can be changed as appropriate. For example, the first substrate 13 and the second substrate 51 may each be a multi-layer substrate, and in addition to the crystal oscillator 20, other components may be mounted thereon. Moreover, the first cap 14 and the second cap 52 are not limited to being made of a single metal, and may be provided with a film such as a plating film as necessary.

(Second embodiment)
FIG. 6 is a cross-sectional view showing a laminated structure of a crystal oscillator, a first housing member, and a semiconductor element of a semiconductor module according to the second embodiment. In the second embodiment, unlike the first embodiment, the upper plate 14a of the first cap 14 has a curved shape. For the sake of understanding, the curved shape of the upper plate 14a shown in FIG. 6 and the like is emphasized rather than the actual curved shape, and the difference between the distances d1 and d2 is shown to be large. The difference between the actual distances d1 and d2 is smaller than in FIG.

As shown in FIG. 6, in the semiconductor module 10A, the central portion of the upper plate 14a is recessed toward the first substrate 13 side. Also in this case, the upper plate 14a is provided so as to be in a non-contact state with the crystal resonator 20. As shown in FIG.

A distance d1 between the upper plate 14a and the semiconductor element 40 at the central portion of the upper plate 14a is larger than a distance d2 between the upper plate 14a and the semiconductor element 40 at the peripheral edge of the upper plate 14a. The distance d1 indicates the distance at the position where the upper plate 14a is the lowest (that is, closest to the first substrate 13). Further, the distance d2 indicates the distance at the position where the upper plate 14a is the highest (that is, the position farthest from the first substrate 13).

In the second embodiment, the thickness of the adhesive member 30 at the central portion of the upper plate 14a can be made thicker than in the first embodiment. Accordingly, when heat is applied, the stress generated between the first cap 14 and the semiconductor element 40 can be effectively dispersed, and the residual stress generated in the semiconductor element 40 after heat treatment can be effectively reduced. can be suppressed.

(Third embodiment)
FIG. 7 is a plan view schematically showing a semiconductor module according to the third embodiment. In the third embodiment, unlike the first and second embodiments, the adhesive member 30 is provided so as to overlap the first long side s1 and the second long side s2 of the four sides of the first cap 14. The configuration to be used will be described.

As shown in FIG. 7, in the semiconductor module 10B, the adhesive member 30 is provided at a position that does not overlap the first short side s3 and the second short side s4. In other words, the adhesive member 30 is arranged between the first short side s3 and the second short side s4 in plan view. The wall portion 14b of the first short side s3 and the second short side s4 faces the semiconductor element 40 without the adhesive member 30 interposed therebetween.

Of the four sides of the first cap 14, the first long side s1 and the second long side s2 are longer than the first short side s3 and the second short side s4. The amount of deformation when heat is applied is large in the direction along the side s1 and the second long side s2. Also in the third embodiment, since the adhesive member 30 is arranged to overlap at least the first long side s1 and the second long side s2, the stress generated in the semiconductor element 40 when heat is applied can be effectively reduced. can be suppressed, and deformation of the semiconductor element 40 can be suppressed.

The semiconductor module 10B of the third embodiment can be combined with the configuration of the second embodiment described above.

In addition, the above-described embodiment is for facilitating the understanding of the present invention, and is not for limiting and interpreting the present invention. The present invention may be modified/improved without departing from its spirit, and the present invention also includes equivalents thereof.

10, 10A, 10B semiconductor module 12 first housing member 12a, s1 first long side 12b, s2 second long side 12c, s3 first short side 12d, s4 second short side 13 first substrate 14 first cap 14a, 52a upper plate 14b, 52b wall portion 14c, 52c flange portion 14d curved portion 16, 41, 54, 55 connection terminal 20 crystal oscillator 21 conductive adhesive 30 adhesive member 31 fillet 40 semiconductor element 45 bonding wire 50 second housing member 51 second substrate 52 second cap SP1, SP2 internal space

Claims (6)

a first substrate;
an electronic component mounted on the first substrate;
a first cap that is provided on the first substrate and includes an upper plate that covers the electronic component and a wall that surrounds the upper plate;
a semiconductor element facing the upper plate and having an area larger than that of the first cap in plan view from a direction perpendicular to the first substrate;
an adhesive member provided between the first cap and the semiconductor element and formed with a fillet that spreads from the first cap toward the semiconductor element ;
the upper plate has a curved shape in which a central portion is recessed toward the first substrate;
The distance between the upper plate and the semiconductor element at the central portion is greater than the distance between the upper plate and the semiconductor element at the periphery of the upper plate.
semiconductor module. The semiconductor module according to claim 1,
The first cap includes, in plan view, a first long side, a second long side facing the first long side, and a first long side provided between the first long side and the second long side. having a short side and a second short side,
The adhesive member is provided so as to overlap at least the first long side and the second long side. 3. The semiconductor module according to claim 1 or 2,
The adhesive member is provided so as to overlap with four sides surrounding the periphery of the first cap in plan view. The semiconductor module according to any one of claims 1 to 3 ,
The first cap has a curved portion connecting the upper plate and the wall,
The adhesive member is provided to cover the upper plate and the curved portion. The semiconductor module according to any one of claims 1 to 4 ,
Furthermore, a second substrate on which the first substrate is mounted;
A semiconductor module including a second cap provided on the second substrate and covering the first substrate, the first cap, and the semiconductor element. The semiconductor module according to any one of claims 1 to 5 ,
The semiconductor module, wherein the electronic component is a crystal oscillator.

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