JP7140327B2 - 波長変換装置及び光源装置 - Google Patents
波長変換装置及び光源装置 Download PDFInfo
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- JP7140327B2 JP7140327B2 JP2018134291A JP2018134291A JP7140327B2 JP 7140327 B2 JP7140327 B2 JP 7140327B2 JP 2018134291 A JP2018134291 A JP 2018134291A JP 2018134291 A JP2018134291 A JP 2018134291A JP 7140327 B2 JP7140327 B2 JP 7140327B2
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- 238000006243 chemical reaction Methods 0.000 title claims description 53
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 120
- 230000003287 optical effect Effects 0.000 claims description 25
- 239000000919 ceramic Substances 0.000 claims description 7
- 238000005192 partition Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 238000000605 extraction Methods 0.000 description 19
- 102220484488 Nuclear factor erythroid 2-related factor 3_L30A_mutation Human genes 0.000 description 14
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- 238000012986 modification Methods 0.000 description 6
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- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
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- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/008—Surface plasmon devices
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
- F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
- F21V9/32—Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/64—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/65—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction specially adapted for changing the characteristics or the distribution of the light, e.g. by adjustment of parts
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/68—Details of reflectors forming part of the light source
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
- G02B1/005—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials made of photonic crystals or photonic band gap materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B21/00—Projectors or projection-type viewers; Accessories therefor
- G03B21/14—Details
- G03B21/20—Lamp housings
- G03B21/2006—Lamp housings characterised by the light source
- G03B21/2033—LED or laser light sources
- G03B21/204—LED or laser light sources using secondary light emission, e.g. luminescence or fluorescence
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0087—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02257—Out-coupling of light using windows, e.g. specially adapted for back-reflecting light to a detector inside the housing
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/30—Semiconductor lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- Semiconductor Lasers (AREA)
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- Surface Treatment Of Optical Elements (AREA)
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Description
WC、WCA、WC1、WC2、WC21、WC22、WC3、WC4
14、21、22、31 波長変換体
14A、21A、21B、21C、31A 蛍光体プレート
15 アンテナアレイ
15A 光学アンテナ
17、22、22A、22B 凹部構造
R1、R2、R21、R22 凹部
Claims (11)
- 光入射面から入射した光の波長を変換して波長変換光を生成し、前記波長変換光を光出射面から出射する蛍光体プレートを有する波長変換体と、
前記蛍光体プレートの前記光出射面上において周期的に配列された複数の光学アンテナからなるアンテナアレイと、
前記蛍光体プレートの前記光出射面に設けられた少なくとも1つの凹部を含む凹部構造と、
前記蛍光体プレートに入射させる光を生成する半導体光源と、を有し、
前記複数の光学アンテナは、格子状に配列され、
前記凹部構造は、前記蛍光体プレートの前記光出射面において前記複数の光学アンテナの配列方向に沿って格子状に延びる複数の溝を有し、
前記複数の溝は、前記光出射面における前記アンテナアレイが形成された領域を格子状に区画し、隣接する溝と溝の間には前記光学アンテナが複数配置されており、
前記蛍光体プレートは、単相の蛍光体からなるセラミックプレートであることを特徴とする光源装置。 - 前記少なくとも1つの凹部は、粗面化された内壁面を有することを特徴とする請求項1に記載の光源装置。
- 前記少なくとも1つの凹部は、前記複数の光学アンテナの高さよりも大きな深さを有することを特徴とする請求項1又は2に記載の光源装置。
- 前記複数の光学アンテナは、前記波長変換光の前記蛍光体プレート内における波長に対応する周期で配列されていることを特徴とする請求項1乃至3のいずれか1つに記載の光源装置。
- 前記少なくとも1つの凹部は、前記蛍光体プレートの前記光出射面に対して傾斜した側面を有することを特徴とする請求項1乃至4のいずれか1つに記載の光源装置。
- 前記複数の光学アンテナは、正方格子状または三角格子状に配列されていることを特徴とする請求項1乃至5のいずれか1つに記載の光源装置。
- 前記蛍光体プレートは、前記光出射面から前記光入射面に向かって窄んだ傾斜側面を有することを特徴とする請求項1乃至6のいずれか1つに記載の光源装置。
- 前記凹部構造の前記少なくとも1つの凹部内に設けられた光反射部を有することを特徴とする請求項1乃至7のいずれか1つに記載の光源装置。
- 前記波長変換体は、前記蛍光体プレートの側面上に設けられた光反射膜を有することを特徴とする請求項1乃至8のいずれか1つに記載の光源装置。
- 前記蛍光体プレートの前記光入射面上に設けられ、前記光入射面から入射した光に対して透過性を有しかつ前記波長変換光に対して反射性を有する光反射構造と、
前記光反射構造を介して前記波長変換体を支持する支持体と、
前記支持体の前記光反射構造とは反対側の面上に設けられた反射防止構造と、を有することを特徴とする請求項1乃至9のいずれか1つに記載の光源装置。 - 前記光源はレーザ光を生成するレーザ光源であることを特徴とする請求項10に記載の光源装置。
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JP2018134291A JP7140327B2 (ja) | 2018-07-17 | 2018-07-17 | 波長変換装置及び光源装置 |
US16/510,736 US10907773B2 (en) | 2018-07-17 | 2019-07-12 | Wavelength conversion device and light source device |
CN201910640062.1A CN110726122B (zh) | 2018-07-17 | 2019-07-16 | 波长转换装置和光源装置 |
EP19186700.1A EP3598184B1 (en) | 2018-07-17 | 2019-07-17 | Wavelength conversion device and light source device |
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JP6918304B2 (ja) * | 2017-03-06 | 2021-08-11 | 国立大学法人京都大学 | 照明装置 |
DE102020106594A1 (de) * | 2019-03-12 | 2020-09-17 | Nichia Corporation | Verfahren zur herstellung eines optischen elements, optisches element, und lichtemittierende vorrichtung |
JP2023031430A (ja) * | 2021-08-25 | 2023-03-09 | 国立大学法人京都大学 | 波長変換装置及び照明装置 |
WO2023113962A1 (en) * | 2021-12-15 | 2023-06-22 | Lumileds Llc | Phosphor-converted light-emitting diode with dielectric spacer, method for operating an array of such phosphor-converted light-emitting diodes and method for making phosphor-converted light-emitting diode with dielectric spacer |
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US20200025341A1 (en) | 2020-01-23 |
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