JP7096999B2 - Manufacturing method of composite board for heat dissipation material and heat dissipation unit - Google Patents
Manufacturing method of composite board for heat dissipation material and heat dissipation unit Download PDFInfo
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Description
本発明は、炭素系材料基板の上に接合用材料（以下、接合層）を形成した放熱材料用複合基板および放熱ユニットの製造方法に関する。
より詳しくは、グラフェンあるいはグラファイトを含む炭素系材料からなる高熱伝導性基板と他の放熱基板との接合を容易にするために、炭素系材料からなる基板(以下、「炭素系基板」という)に接合層を形成した放熱材料用複合基板の製造方法と、前記放熱材料用複合基板の接合層と他の放熱基板とを接合した放熱効果にすぐれた放熱ユニットの製造方法に関する。
The present invention relates to a method for manufacturing a composite substrate for heat-dissipating materials and a heat-dissipating unit in which a bonding material (hereinafter referred to as a bonding layer) is formed on a carbon-based material substrate.
More specifically, in order to facilitate the bonding between a high thermal conductive substrate made of a carbon-based material containing graphene or graphite and another heat-dissipating substrate, a substrate made of a carbon-based material (hereinafter referred to as "carbon-based substrate") is used. The present invention relates to a method for manufacturing a composite substrate for heat-dissipating material on which a bonded layer is formed, and a method for manufacturing a heat-dissipating unit having an excellent heat-dissipating effect by joining a bonded layer of the composite substrate for heat-dissipating material and another heat-dissipating substrate.
グラフェンをはじめとした炭素系材料からなる基板は、高熱伝導性かつ軽量であることから、車載向けのパワー半導体素子やその回路周辺からの放熱基板としての応用が期待される。特に近年注目を集める電気自動車への応用を考えた場合、素子の大電流化に伴い放熱効率の向上、車体軽量化を目的とした軽量部材の使用が増加することが予想され、放熱基板としてグラフェンの応用が期待されている。 Since a substrate made of a carbon-based material such as graphene has high thermal conductivity and is lightweight, it is expected to be applied as a power semiconductor element for automobiles and a heat dissipation substrate from the circuit periphery thereof. Especially when considering the application to electric vehicles, which have been attracting attention in recent years, it is expected that the use of lightweight members for the purpose of improving heat dissipation efficiency and reducing the weight of the vehicle body will increase as the current of the element increases, and graphene as a heat dissipation substrate. Is expected to be applied.
従来は、放熱基板と半導体素子は半田で接合し、冷却器側には、Ｃｕの放熱基板を利用する場合が一般的であったが、非特許文献１のように放熱基板の一部を高熱伝導性のグラファイトにすることにより、全体の放熱特性の改善を期待できる例が記載されている。 In the past, it was common to join the heat dissipation board and the semiconductor element with solder and use a Cu heat dissipation board on the cooler side, but as in Non-Patent Document 1, a part of the heat dissipation board is heated to high heat. An example is described in which the overall heat dissipation characteristics can be expected to be improved by using conductive graphite.
グラフェンをはじめとした炭素系材料を放熱材料として使用するにあたり、他の金属製の放熱部材や半導体素子とを半田などを用いて接合することが必須となるが、炭素系材料と金属材料との化学的親和性が著しく小さいため、直接接合することが困難であった。 When using a carbon-based material such as graphene as a heat-dissipating material, it is essential to join other metal heat-dissipating members and semiconductor elements with solder, etc. Due to its extremely low chemical affinity, direct bonding was difficult.
本発明の目的の一つは、グラフェンをはじめとした高熱伝導性の炭素系材料と金属材料との接合性を改善するために、炭素系基板に接合層を形成した複合基板の新たな製造方法を提供することである。
また、本発明の他の目的は、前記複合基板の放熱効果及び強度を向上させることであり、炭素系材料がグラフェン又はグラファイトの積層構造体から構成されている場合の、強度の向上及び層間剥離強度を向上させることである。
さらに、本発明の他の目的は、すぐれた放熱効果を発揮する複合基板、放熱ユニットを提供することである。
One of the objects of the present invention is a new method for manufacturing a composite substrate in which a bonding layer is formed on a carbon-based substrate in order to improve the bondability between a carbon-based material having high thermal conductivity such as graphene and a metal material. Is to provide.
Another object of the present invention is to improve the heat dissipation effect and strength of the composite substrate, and when the carbon-based material is composed of a laminated structure of graphene or graphite, the strength is improved and delamination is performed. It is to improve the strength.
Further, another object of the present invention is to provide a composite substrate and a heat dissipation unit that exhibit an excellent heat dissipation effect.
本発明の第１の特徴は、
炭素系基板を化学蒸着装置に装入する工程、
前記化学蒸着装置内に反応ガスを導入する工程、
前記炭素系基板表面に金属成分を化学蒸着させて前記炭素系基板表面に接合層を形成する工程、
を含む複合基板の製造方法において、
前記反応ガスは、接合層を構成する金属成分の金属塩化物ガスを２～１０容量％と残部は水素ガスからなり、
前記接合層は、少なくとも前記炭素系基板との界面で金属炭化物を形成している放熱材料用複合基板の製造方法にある。
The first feature of the present invention is
The process of charging a carbon-based substrate into a chemical vapor deposition device,
The step of introducing the reaction gas into the chemical vapor deposition apparatus,
A step of chemically vapor deposition of a metal component on the surface of the carbon-based substrate to form a bonding layer on the surface of the carbon-based substrate.
In the method of manufacturing a composite substrate including
The reaction gas consists of 2 to 10% by volume of metal chloride gas, which is a metal component constituting the bonding layer, and hydrogen gas in the balance.
The bonding layer is in a method for manufacturing a composite substrate for a heat-dissipating material in which a metal carbide is formed at least at an interface with the carbon-based substrate.
また、本発明の第２の特徴は、前記複合基板の炭素系基板が、シート状のグラフェンを積層したグラフェン積層構造体で構成されている点にある。 The second feature of the present invention is that the carbon-based substrate of the composite substrate is composed of a graphene laminated structure in which sheet-shaped graphene is laminated.
さらに、本発明の第３の特徴は、前記複合基板と、放熱器または半導体素子とが前記接合層を介して接合されている放熱ユニットにある。 Further, a third feature of the present invention is a heat dissipation unit in which the composite substrate and a radiator or a semiconductor element are bonded via the bonding layer.
炭素系材料と金属材料は、一般的に化学親和性が乏しいため、接合が困難であるとされてきたが、本発明によれば、グラフェン、グラファイト等の炭素系材料からなる炭素系基板の表面に、化学蒸着法により接合層を容易に形成することができ、そして、形成された接合層と炭素系基板との少なくとも界面には金属炭化物が生成するため、炭素系基板と接合層との密着性にすぐれた複合基板を得ることができる。
そして、前記複合基板の接合層と、例えばＣｕからなる放熱器または半導体素子を接合した放熱ユニットは、接合強度が高く、かつ、極めて高い放熱効率が得られる。
It has been considered difficult to bond carbon-based materials and metal materials because they generally have poor chemical affinity. However, according to the present invention, the surface of a carbon-based substrate made of carbon-based materials such as graphene and graphite. In addition, the bonding layer can be easily formed by the chemical vapor deposition method, and since metal carbide is generated at least at the interface between the formed bonding layer and the carbon-based substrate, the carbon-based substrate and the bonding layer adhere to each other. It is possible to obtain a composite substrate having excellent properties.
The heat dissipation unit in which the bonding layer of the composite substrate is bonded to a radiator or a semiconductor element made of, for example, Cu has high bonding strength and extremely high heat dissipation efficiency.
本発明の第１の特徴である複合基板の製造方法によれば、化学蒸着法で接合層を形成するに際し、反応ガスとして、接合層を構成する金属成分(例えば、Ｔｉ)の金属塩化物ガス(例えば、ＴｉＣｌ４ガス)と水素ガスのみを使用することによって、例えば、図１（ａ）、（ｂ）に示す金属成分主体の接合層２を形成することができるとともに、炭素系基板１と接合層２の界面に金属炭化物(例えば、ＴｉＣ。図示せず)を形成することができる。
従来、炭素系材料と金属材料の密着性の高い接合は困難であったが、本発明においては、炭素系基板と接合層の界面に金属炭化物を形成することにより、炭素系材料と金属材料の密着性にすぐれた複合基板を得ることができる。
According to the method for producing a composite substrate, which is the first feature of the present invention, when forming a bonding layer by a chemical vapor deposition method, a metal chloride gas of a metal component (for example, Ti) constituting the bonding layer is used as a reaction gas. By using only (for example, TiCl 4 gas) and hydrogen gas, for example, the metal component-based bonding layer 2 shown in FIGS. 1 (a) and 1 (b) can be formed, and the carbon-based substrate 1 can be formed. Metal carbides (eg TiC, not shown) can be formed at the interface of the bonding layer 2.
Conventionally, it has been difficult to bond a carbon-based material and a metal material with high adhesion, but in the present invention, by forming a metal carbide at the interface between the carbon-based substrate and the bonding layer, the carbon-based material and the metal material can be bonded. A composite substrate with excellent adhesion can be obtained.
前記接合層を構成する金属成分は、Ｔｉ、Ｃｒ及びＺｒから選ばれる何れか一種の金属成分であることが好ましく、接合層を構成する金属成分がＴｉの場合には、金属塩化物ガスはＴｉＣｌ４ガスであり、接合層を構成する金属成分がＣｒの場合、金属塩化物ガスはＣｒＣｌ３ガスであり、接合層を構成する金属成分がＺｒの場合、金属塩化物ガスはＺｒＣｌ４ガスである。
また、化学蒸着の好ましい蒸着条件は、次のとおりである。
反応ガス組成（容量％）：金属塩化物ガス ２～１０％，残部は水素ガス、
反応雰囲気温度：９５０～１０５０℃、
反応雰囲気圧力：６～２０ｋＰａ、
反応時間：３０～２４０分(ただし、形成する接合層の所望厚さによる)
The metal component constituting the bonding layer is preferably any one of the metal components selected from Ti, Cr and Zr, and when the metal component constituting the bonding layer is Ti, the metal chloride gas is TiCl. When the metal component constituting the bonding layer is Cr, the metal chloride gas is CrCl 3 gas , and when the metal component constituting the bonding layer is Zr, the metal chloride gas is ZrCl 4 gas. ..
The preferred vapor deposition conditions for chemical vapor deposition are as follows.
Reaction gas composition (volume%): Metal chloride gas 2-10%, the balance is hydrogen gas,
Reaction atmosphere temperature: 950-1050 ° C,
Reaction atmosphere pressure: 6-20 kPa,
Reaction time: 30-240 minutes (however, depending on the desired thickness of the bonding layer to be formed)
炭素系基板表面に、Ｔｉ、Ｃｒ、Ｚｒ等の金属成分を化学蒸着させて接合層を形成すると、炭素系基板表面と接合層間での界面反応により、Ｔｉ炭化物、Ｃｒ炭化物あるいはＺｒ炭化物等の金属炭化物が、前記炭素系基板表面と接合層との界面に生成することにより、炭素系基板と接合層との密着性が向上した複合基板を得ることができる。
特に、前記炭素系基板表面と接合層との界面に形成される金属炭化物が、Ｔｉの炭化物である場合には、基板を構成する炭素系材料であるグラフェンあるいはグラファイトとの親和性が高いことに加え、放熱材料として広く用いられるＣｕとの合金を形成しやすいことから、密着性、密着強度にすぐれた接合層を構成する金属成分としてはＴｉが好ましい。
When a metal component such as Ti, Cr, and Zr is chemically vapor-deposited on the surface of a carbon-based substrate to form a bonding layer, a metal such as Ti carbide, Cr carbide, or Zr carbide is formed due to an interfacial reaction between the surface of the carbon-based substrate and the bonding layer. By forming carbides at the interface between the carbon-based substrate surface and the bonding layer, a composite substrate with improved adhesion between the carbon-based substrate and the bonding layer can be obtained.
In particular, when the metal carbide formed at the interface between the surface of the carbon-based substrate and the bonding layer is a carbide of Ti, it has a high affinity with graphene or graphite, which are carbon-based materials constituting the substrate. In addition, since it is easy to form an alloy with Cu, which is widely used as a heat dissipation material, Ti is preferable as a metal component constituting a bonding layer having excellent adhesion and adhesion strength.
本発明の前記複合基板において、接合層を形成する基板表面は、炭素系基板の表面の片面のみ、あるいは両面とすることができる(図１（ａ）、（ｂ）参照)。
また、炭素系基板の表面の片面のみ、あるいは両面に接合層を形成するとともに、炭素系基板の表面の側面の一部あるいは全面に、接合層を形成することができる(図２（ａ）参照)。
In the composite substrate of the present invention, the substrate surface on which the bonding layer is formed may be only one side or both sides of the surface of the carbon-based substrate (see FIGS. 1 (a) and 1 (b)).
Further, the bonding layer can be formed on only one side or both sides of the surface of the carbon-based substrate, and the bonding layer can be formed on a part or the entire surface of the surface of the carbon-based substrate (see FIG. 2A). ).
図１（ａ）、（ｂ）、図２（ａ）においては、単層からなる接合層を示しているが、接合層は必ずしも単層である必要はなく、例えば、図２（ｂ）に示されるように複数層の積層構造（例えば、図２（ｂ）では、下部接合層と上部接合層の二層構造）として形成されていても良い。
例えば、炭素系基板に接する接合層(例えば、図２（ｂ）の「下部接合層」)の表面に、窒化物からなる接合層（上部接合層）を形成する場合は、金属塩化物ガスに加えＮ２ガスを含有する反応ガスを用いて蒸着すればよく、また、炭化物からなる接合層（上部接合層）を形成する場合は、例えば、金属塩化物ガスに加えＣＨ４ガスを含有する反応ガスを用いて成膜すればよい。
なお、図２（ｂ）の前記下部接合層は炭素系基板の表面直上に形成されていることから、炭素系基板との界面に金属炭化物が当然に形成されている。
接合層を複数層の積層構造として構成する場合には、炭素系基板に接していない接合層(図２（ｂ）の「上部接合層」参照)は、従来から知られている通常の化学蒸着法により任意の接合層を成膜することができる。
さらに、上部接合層も単層である必要はなく、複数層の積層構造として構成されていてもよい。
ただし、本発明の複合基板を放熱材料として適用する場合には、接合層は、単層構造であるか積層構造であるかにかかわらず、熱伝導性を低下させる接合層の形成を避けなければならないことは当然である。
なお、接合層の厚さ(積層構造からなる接合層の場合には、合計厚さ)は、好ましくは０．１～１０μｍである。その理由は、厚さが０．１μｍ未満であると十分な密着性が得られず、一方、厚さが１０μｍを超えると、接合層を設けることによる熱伝導の低下が無視できなくなり、放熱特性が低下するためである。
1 (a), (b), and 2 (a) show a bonded layer composed of a single layer, but the bonded layer does not necessarily have to be a single layer, and for example, FIG. 2 (b) shows. As shown, it may be formed as a laminated structure of a plurality of layers (for example, in FIG. 2B, a two-layer structure of a lower bonding layer and an upper bonding layer).
For example, when a bonding layer made of nitride (upper bonding layer) is formed on the surface of a bonding layer in contact with a carbon-based substrate (for example, the “lower bonding layer” in FIG. 2 (b)), a metal chloride gas is used. In addition, vapor deposition may be carried out using a reaction gas containing N 2 gas, and when forming a bonding layer made of carbide (upper bonding layer), for example, a reaction containing CH 4 gas in addition to metal chloride gas. The film may be formed using gas.
Since the lower bonding layer of FIG. 2B is formed directly above the surface of the carbon-based substrate, metal carbides are naturally formed at the interface with the carbon-based substrate.
When the bonding layer is configured as a laminated structure of a plurality of layers, the bonding layer that is not in contact with the carbon-based substrate (see "upper bonding layer" in FIG. 2 (b)) is a conventional chemical vapor deposition. Any bonding layer can be formed by the method.
Further, the upper bonding layer does not have to be a single layer, and may be configured as a laminated structure of a plurality of layers.
However, when the composite substrate of the present invention is applied as a heat radiating material, it is necessary to avoid forming a bonding layer that reduces thermal conductivity regardless of whether the bonding layer has a single-layer structure or a laminated structure. It is natural that it does not become.
The thickness of the bonding layer (in the case of a bonding layer having a laminated structure, the total thickness) is preferably 0.1 to 10 μm. The reason is that if the thickness is less than 0.1 μm, sufficient adhesion cannot be obtained, while if the thickness exceeds 10 μm, the decrease in heat conduction due to the provision of the bonding layer cannot be ignored, and the heat dissipation characteristics cannot be ignored. This is because
本発明の複合基板は、半導体素子や他の放熱材料と、金属成分主体の接合層を介して密着性にすぐれた状態で容易に接合することが可能となる。 The composite substrate of the present invention can be easily bonded to a semiconductor element or other heat-dissipating material in a state of excellent adhesion via a bonding layer mainly composed of a metal component.
本発明の炭素系基板における炭素系材料は、高熱伝導性を有するシート状のグラフェン又はグラファイトを積層した積層構造体で構成されることが好ましい。
ただ、シート状のグラフェン又はグラファイトを積層した積層構造体は、熱伝導率に異方性があるため、これを放熱材料用基板として用いる場合、所望の放熱(伝熱)方向に応じて、高放熱効果を得るために積層構造体におけるシート状のグラフェン又はグラファイトの積層方向を定める必要がある。
具体的には、炭素系基板の熱伝導率が、基板の厚み方向に高熱伝導率を示し、基板の厚み方向と直交する基板面方向の少なくとも１方向に低熱伝導率を示す異方性を有するように積層構造体の積層方向を定める必要がある。
より具体的には、図３に示す複合基板において、シート状のグラフェン又はグラファイトを積層した積層構造体からなる炭素系基板１は、基板の厚み方向(図３中、「伝熱方向」で示す)に高熱伝導率を示し、基板の厚み方向と直交する基板面方向(図３中、「積層方向」で示す)の少なくとも１方向に低熱伝導率を示す異方性を有することから、図３に示すように積層構造体の積層方向を定める必要がある。
また、図３に示す方向に、シート状のグラフェン又はグラファイトを積層した積層構造体の積層方向を定め、図２（ａ）に示すように炭素系基板の側面にも接合層を形成した場合には、本発明の複合基板は、半導体素子や他の放熱材料との接合の容易性に加え、複合基板としての強度の向上(積層方向に力が作用した場合の剥離強度の向上)を図ることができる。
なお、炭素系基板の厚さは、好ましくは１～３０ｍｍである。その理由は、１ｍｍ未満であると、薄すぎて十分な放熱能力を有することができず、一方、３０ｍｍを超えると、基板が大型化し過ぎてしまうためである。
The carbon-based material in the carbon-based substrate of the present invention is preferably composed of a laminated structure in which sheet-shaped graphene or graphite having high thermal conductivity is laminated.
However, since the laminated structure in which sheet-shaped graphene or graphite is laminated has anisotropy in thermal conductivity, when it is used as a substrate for heat dissipation material, it is high depending on the desired heat dissipation (heat transfer) direction. In order to obtain the heat dissipation effect, it is necessary to determine the stacking direction of sheet-shaped graphene or graphite in the laminated structure.
Specifically, the thermal conductivity of the carbon-based substrate has anisotropy showing high thermal conductivity in the thickness direction of the substrate and low thermal conductivity in at least one direction of the substrate surface direction orthogonal to the thickness direction of the substrate. It is necessary to determine the stacking direction of the laminated structure.
More specifically, in the composite substrate shown in FIG. 3, the carbon-based substrate 1 composed of a laminated structure in which sheet-shaped graphene or graphite is laminated is shown in the thickness direction of the substrate (in FIG. 3, "heat transfer direction"). ) Shows high thermal conductivity, and has anisotropy showing low thermal conductivity in at least one direction of the substrate surface direction (indicated by “lamination direction” in FIG. 3) orthogonal to the thickness direction of the substrate. It is necessary to determine the stacking direction of the laminated structure as shown in.
Further, when the laminating direction of the laminated structure in which the sheet-shaped graphene or graphite is laminated is determined in the direction shown in FIG. 3 and the bonding layer is formed on the side surface of the carbon-based substrate as shown in FIG. 2A. The composite substrate of the present invention is intended to improve the strength of the composite substrate (improve the peel strength when a force acts in the stacking direction) in addition to the ease of bonding with a semiconductor element or other heat radiating material. Can be done.
The thickness of the carbon-based substrate is preferably 1 to 30 mm. The reason is that if it is less than 1 mm, it is too thin to have sufficient heat dissipation capacity, while if it exceeds 30 mm, the size of the substrate becomes too large.
本発明の複合基板の接合層を介して放熱器や半導体素子を接合した、放熱ユニットを得ることができるが、放熱器の形状は板状に限定されるものではない。また、放熱器の材質は、Ｃｕ、Ａｌ、ＡｌＮ、Ａｌ２Ｏ３を例示することができる。 It is possible to obtain a heat dissipation unit in which a radiator and a semiconductor element are joined via a bonding layer of the composite substrate of the present invention, but the shape of the radiator is not limited to a plate shape. Further, as the material of the radiator, Cu, Al, AlN, and Al 2 O 3 can be exemplified.
本発明の実施例について説明する。 Examples of the present invention will be described.
接合層の形成：
図３に示すような積層方向を有する、シート状のグラフェンを積層した積層構造体からなる厚さ４ｍｍで縦と横が共に１００ｍｍの大きさの炭素系基板１を用意した。
次いで、図１（ｂ）に示されるように炭素系基板１の片面(上面)に、接合層２を形成した。
接合層２としては、ＴｉＣｌ４ガスを反応ガスとして用いた化学蒸着法によって膜厚３．５μｍになるように形成した。
化学蒸着の条件は、次のとおりである。
反応ガス組成(容量％) ： ＴｉＣｌ４ ４％、残部Ｈ２、
反応雰囲気温度：１０２０℃、
反応雰囲気圧力：８ｋＰａ、
反応時間 ：１２０分
上記の条件でＴｉを蒸着形成したところ、炭素系基板１の表面に接合層２として層厚３．５μｍのＴｉの炭化物を含む層が生成していることが観察された。
このようにして、炭素系基板１の表面に、Ｔｉの炭化物が含まれる接合層を形成した本発明の複合基板を作製した。
Formation of joint layer:
A carbon-based substrate 1 having a stacking direction as shown in FIG. 3 and having a thickness of 4 mm and a size of 100 mm in both length and width, which is composed of a laminated structure in which sheet-shaped graphene is laminated, was prepared.
Next, as shown in FIG. 1 (b), the bonding layer 2 was formed on one side (upper surface) of the carbon-based substrate 1.
The bonding layer 2 was formed so as to have a film thickness of 3.5 μm by a chemical vapor deposition method using TiCl 4 gas as a reaction gas.
The conditions for chemical vapor deposition are as follows.
Reaction gas composition (% by volume): TiCl 44%, balance H 2 ,
Reaction atmosphere temperature: 1020 ° C,
Reaction atmosphere pressure: 8 kPa,
Reaction time: 120 minutes When Ti was vapor-deposited and formed under the above conditions, it was observed that a layer containing a carbide of Ti having a layer thickness of 3.5 μm was formed as the bonding layer 2 on the surface of the carbon-based substrate 1.
In this way, the composite substrate of the present invention in which a bonding layer containing a carbide of Ti was formed on the surface of the carbon-based substrate 1 was produced.
次に、複合基板に形成された接合層（Ｔｉ炭化物を含有）に、厚さ３０ｍｍ、縦と横が共に１００ｍｍの大きさの純銅板を放熱板として接触させ、真空中で３００℃、１０ＭＰａの加圧下で接合することにより、放熱ユニットを作製した。
この放熱ユニットにおいては、複合基板と純銅板からなる放熱板の密着性はすぐれ、かつ、放熱効果も高いものであった。
Next, a pure copper plate having a thickness of 30 mm and a size of 100 mm in both length and width was brought into contact with the bonding layer (containing Ti carbide) formed on the composite substrate as a heat sink, and the temperature was 300 ° C. and 10 MPa in vacuum. A heat dissipation unit was manufactured by joining under pressure.
In this heat-dissipating unit, the adhesion between the heat-dissipating plate made of the composite substrate and the pure copper plate was excellent, and the heat-dissipating effect was also high.
本発明の複合基板は、他の放熱材料と組み合わせることにより、放熱材料とのすぐれた密着性を有するとともに、すぐれた放熱効果を発揮する放熱ユニットとしての利用が期待される。
The composite substrate of the present invention is expected to be used as a heat dissipation unit that has excellent adhesion to the heat dissipation material and exhibits an excellent heat dissipation effect by combining with other heat dissipation materials.
Claims (6)
前記化学蒸着装置内に反応ガスを導入する工程、
前記炭素系材料からなる基板の表面に金属成分を化学蒸着させて、前記炭素系材料からなる基板の表面に接合層を形成する工程、を含む複合基板の製造方法において、
前記反応ガスは、接合層を構成する金属成分の金属塩化物ガスを２～１０容量％と残部は水素ガスからなり、
前記接合層を構成する金属成分はＣｒまたはＺｒであり、前記金属塩化物ガスはＣｒＣｌ ３ ガスまたはＺｒＣｌ ４ ガスであり、
前記接合層は、少なくとも前記炭素系材料からなる基板との界面にＣｒの炭化物またはＺｒの炭化物が形成されていることを特徴とする放熱材料用複合基板の製造方法。 The process of charging a substrate made of carbon-based material into a chemical vapor deposition device,
The step of introducing the reaction gas into the chemical vapor deposition apparatus,
In a method for manufacturing a composite substrate, which comprises a step of chemically vapor deposition of a metal component on the surface of a substrate made of the carbon-based material to form a bonding layer on the surface of the substrate made of the carbon-based material.
The reaction gas consists of 2 to 10% by volume of metal chloride gas, which is a metal component constituting the bonding layer, and hydrogen gas in the balance.
The metal component constituting the bonding layer is Cr or Zr, and the metal chloride gas is CrCl 3 gas or ZrCl 4 gas.
A method for manufacturing a composite substrate for a heat-dissipating material, wherein the bonding layer is formed with a carbide of Cr or a carbide of Zr at an interface with a substrate made of at least the carbon-based material.
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| JP2012160605A (en) | 2011-02-01 | 2012-08-23 | Allied Material Corp | Manufacturing method of heat dissipation substrate and composite used for the same |
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| JP2012160605A (en) | 2011-02-01 | 2012-08-23 | Allied Material Corp | Manufacturing method of heat dissipation substrate and composite used for the same |
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