JP7086558B2 - 光電変換装置および撮像システム - Google Patents

光電変換装置および撮像システム Download PDF

Info

Publication number
JP7086558B2
JP7086558B2 JP2017194427A JP2017194427A JP7086558B2 JP 7086558 B2 JP7086558 B2 JP 7086558B2 JP 2017194427 A JP2017194427 A JP 2017194427A JP 2017194427 A JP2017194427 A JP 2017194427A JP 7086558 B2 JP7086558 B2 JP 7086558B2
Authority
JP
Japan
Prior art keywords
light
region
layer
unit
shielding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2017194427A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018078281A5 (enrdf_load_stackoverflow
JP2018078281A (ja
Inventor
善之 中川
優 西村
翔 鈴木
崇 岡川
昌弘 小林
裕介 大貫
靖司 松野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to GB2002364.4A priority Critical patent/GB2579517B/en
Priority to US15/792,607 priority patent/US10763298B2/en
Priority to GB1717460.8A priority patent/GB2558714B/en
Priority to CN201711018487.6A priority patent/CN108010927B/zh
Priority to DE102017125227.4A priority patent/DE102017125227B4/de
Publication of JP2018078281A publication Critical patent/JP2018078281A/ja
Priority to US16/921,780 priority patent/US11177314B2/en
Publication of JP2018078281A5 publication Critical patent/JP2018078281A5/ja
Application granted granted Critical
Publication of JP7086558B2 publication Critical patent/JP7086558B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2017194427A 2016-10-28 2017-10-04 光電変換装置および撮像システム Active JP7086558B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
US15/792,607 US10763298B2 (en) 2016-10-28 2017-10-24 Photoelectric conversion apparatus and image pickup system
GB1717460.8A GB2558714B (en) 2016-10-28 2017-10-24 Photoelectric conversion apparatus and image pickup system
GB2002364.4A GB2579517B (en) 2016-10-28 2017-10-24 Photoelectric conversion apparatus and image pickup system
DE102017125227.4A DE102017125227B4 (de) 2016-10-28 2017-10-27 Fotoelektrisches umwandlungsgerät und bildaufnahmesystem
CN201711018487.6A CN108010927B (zh) 2016-10-28 2017-10-27 光电转换装置和图像拾取系统
US16/921,780 US11177314B2 (en) 2016-10-28 2020-07-06 Photoelectric conversion apparatus and image pickup system

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016212128 2016-10-28
JP2016212128 2016-10-28

Publications (3)

Publication Number Publication Date
JP2018078281A JP2018078281A (ja) 2018-05-17
JP2018078281A5 JP2018078281A5 (enrdf_load_stackoverflow) 2020-11-19
JP7086558B2 true JP7086558B2 (ja) 2022-06-20

Family

ID=62149308

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017194427A Active JP7086558B2 (ja) 2016-10-28 2017-10-04 光電変換装置および撮像システム

Country Status (2)

Country Link
JP (1) JP7086558B2 (enrdf_load_stackoverflow)
GB (1) GB2579517B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101740607B1 (ko) * 2016-02-26 2017-05-26 (주)뉴클리어엔지니어링 중수로용 사용후핵연료의 용적 저감 처리 방법

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020053921A1 (ja) 2018-09-10 2020-03-19 オリンパス株式会社 半導体装置
JP7008054B2 (ja) * 2018-10-17 2022-01-25 キヤノン株式会社 光電変換装置および機器
JP2021019058A (ja) * 2019-07-18 2021-02-15 キヤノン株式会社 光電変換装置および機器
JP7520558B2 (ja) 2020-04-07 2024-07-23 キヤノン株式会社 光電変換装置および機器
JP7534902B2 (ja) 2020-09-23 2024-08-15 キヤノン株式会社 光電変換装置、撮像装置、半導体装置及び光電変換システム
JP7595443B2 (ja) * 2020-11-26 2024-12-06 株式会社ジャパンディスプレイ 検出装置
JP7624825B2 (ja) * 2020-11-27 2025-01-31 シャープセミコンダクターイノベーション株式会社 固体撮像装置
CN120345372A (zh) * 2022-12-27 2025-07-18 索尼半导体解决方案公司 光检测装置和电子设备

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009200462A (ja) 2008-01-24 2009-09-03 Sony Corp 固体撮像装置およびその製造方法
JP2011029604A (ja) 2009-06-26 2011-02-10 Canon Inc 光電変換装置の製造方法
JP2012124275A (ja) 2010-12-07 2012-06-28 Sharp Corp 固体撮像素子およびその製造方法、並びにそれを備えた電子機器
JP2012164945A (ja) 2011-02-09 2012-08-30 Canon Inc 半導体装置の製造方法
JP2012248680A (ja) 2011-05-27 2012-12-13 Canon Inc 固体撮像装置、及び固体撮像装置を用いた撮像システム
JP2015125999A (ja) 2013-12-25 2015-07-06 キヤノン株式会社 撮像装置および撮像システム
JP2015176969A (ja) 2014-03-14 2015-10-05 キヤノン株式会社 固体撮像装置及び撮像システム

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3381291B2 (ja) * 1992-02-20 2003-02-24 松下電器産業株式会社 固体撮像装置およびその製造方法
JP2001144280A (ja) * 1999-11-12 2001-05-25 Sony Corp 固体撮像素子
JP2009070912A (ja) * 2007-09-11 2009-04-02 Fujifilm Corp 固体撮像素子及び撮像装置
JP2010034512A (ja) * 2008-07-01 2010-02-12 Fujifilm Corp 固体撮像素子及び撮像装置
JP2012049431A (ja) * 2010-08-30 2012-03-08 Sony Corp 固体撮像装置および電子機器

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009200462A (ja) 2008-01-24 2009-09-03 Sony Corp 固体撮像装置およびその製造方法
JP2011029604A (ja) 2009-06-26 2011-02-10 Canon Inc 光電変換装置の製造方法
JP2012124275A (ja) 2010-12-07 2012-06-28 Sharp Corp 固体撮像素子およびその製造方法、並びにそれを備えた電子機器
JP2012164945A (ja) 2011-02-09 2012-08-30 Canon Inc 半導体装置の製造方法
JP2012248680A (ja) 2011-05-27 2012-12-13 Canon Inc 固体撮像装置、及び固体撮像装置を用いた撮像システム
JP2015125999A (ja) 2013-12-25 2015-07-06 キヤノン株式会社 撮像装置および撮像システム
JP2015176969A (ja) 2014-03-14 2015-10-05 キヤノン株式会社 固体撮像装置及び撮像システム

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101740607B1 (ko) * 2016-02-26 2017-05-26 (주)뉴클리어엔지니어링 중수로용 사용후핵연료의 용적 저감 처리 방법

Also Published As

Publication number Publication date
GB202002364D0 (en) 2020-04-08
JP2018078281A (ja) 2018-05-17
GB2579517A (en) 2020-06-24
GB2579517B (en) 2020-12-09

Similar Documents

Publication Publication Date Title
JP7086558B2 (ja) 光電変換装置および撮像システム
US11177314B2 (en) Photoelectric conversion apparatus and image pickup system
CN110034139B (zh) 图像传感器
US12261183B2 (en) Image pickup device and method for manufacturing image pickup device
US10158817B2 (en) Solid-state imaging apparatus and imaging system
CN103579272B (zh) 成像装置、成像系统和成像装置的制造方法
CN102637705B (zh) 半导体器件制造方法
EP2487716A2 (en) Solid-state image pickup device and method of making the same
CN106486507A (zh) 成像器件和制造成像器件的方法
CN114122033A (zh) 图像传感器及其制造方法
US8389923B2 (en) Photoelectric conversion device, image sensing system, and method of manufacturing photoelectric conversion device
US10431617B2 (en) Photoelectric conversion device and apparatus
US20240243150A1 (en) Image sensor
JP2011233589A (ja) 固体撮像デバイス及び電子機器
JP2024106980A (ja) イメージセンサ及びその製造方法
US9929303B2 (en) Method of manufacturing solid-state image sensor
CN108074945A (zh) 固态成像设备、成像系统和用于制造固态成像设备的方法
JP7008054B2 (ja) 光電変換装置および機器
JP6983925B2 (ja) 撮像装置
JP2017212371A (ja) 固体撮像装置及びその製造方法ならびにカメラ

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20201002

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20201002

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20210930

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20211019

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20211210

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20220510

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20220608

R151 Written notification of patent or utility model registration

Ref document number: 7086558

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151