GB2579517B - Photoelectric conversion apparatus and image pickup system - Google Patents

Photoelectric conversion apparatus and image pickup system Download PDF

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Publication number
GB2579517B
GB2579517B GB2002364.4A GB202002364A GB2579517B GB 2579517 B GB2579517 B GB 2579517B GB 202002364 A GB202002364 A GB 202002364A GB 2579517 B GB2579517 B GB 2579517B
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GB
United Kingdom
Prior art keywords
photoelectric conversion
image pickup
conversion apparatus
pickup system
photoelectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB2002364.4A
Other languages
English (en)
Other versions
GB202002364D0 (en
GB2579517A (en
Inventor
Nishimura Yu
Suzuki Sho
Matsuno Yasushi
Onuki Yusuke
Kobayashi Masahiro
Okagawa Takashi
Nakagawa Yoshiyuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority claimed from GB1717460.8A external-priority patent/GB2558714B/en
Publication of GB202002364D0 publication Critical patent/GB202002364D0/en
Publication of GB2579517A publication Critical patent/GB2579517A/en
Application granted granted Critical
Publication of GB2579517B publication Critical patent/GB2579517B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
GB2002364.4A 2016-10-28 2017-10-24 Photoelectric conversion apparatus and image pickup system Active GB2579517B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016212128 2016-10-28
JP2017194427A JP7086558B2 (ja) 2016-10-28 2017-10-04 光電変換装置および撮像システム
GB1717460.8A GB2558714B (en) 2016-10-28 2017-10-24 Photoelectric conversion apparatus and image pickup system

Publications (3)

Publication Number Publication Date
GB202002364D0 GB202002364D0 (en) 2020-04-08
GB2579517A GB2579517A (en) 2020-06-24
GB2579517B true GB2579517B (en) 2020-12-09

Family

ID=62149308

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2002364.4A Active GB2579517B (en) 2016-10-28 2017-10-24 Photoelectric conversion apparatus and image pickup system

Country Status (2)

Country Link
JP (1) JP7086558B2 (enrdf_load_stackoverflow)
GB (1) GB2579517B (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101740607B1 (ko) * 2016-02-26 2017-05-26 (주)뉴클리어엔지니어링 중수로용 사용후핵연료의 용적 저감 처리 방법
WO2020053921A1 (ja) 2018-09-10 2020-03-19 オリンパス株式会社 半導体装置
JP7008054B2 (ja) * 2018-10-17 2022-01-25 キヤノン株式会社 光電変換装置および機器
JP2021019058A (ja) * 2019-07-18 2021-02-15 キヤノン株式会社 光電変換装置および機器
JP7520558B2 (ja) 2020-04-07 2024-07-23 キヤノン株式会社 光電変換装置および機器
JP7534902B2 (ja) 2020-09-23 2024-08-15 キヤノン株式会社 光電変換装置、撮像装置、半導体装置及び光電変換システム
JP7595443B2 (ja) * 2020-11-26 2024-12-06 株式会社ジャパンディスプレイ 検出装置
JP7624825B2 (ja) * 2020-11-27 2025-01-31 シャープセミコンダクターイノベーション株式会社 固体撮像装置
CN120345372A (zh) * 2022-12-27 2025-07-18 索尼半导体解决方案公司 光检测装置和电子设备

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001144280A (ja) * 1999-11-12 2001-05-25 Sony Corp 固体撮像素子
US20090065815A1 (en) * 2007-09-11 2009-03-12 Naya Akihiko Solid-state imaging device and imaging apparatus
US20100001178A1 (en) * 2008-07-01 2010-01-07 Fujifilm Corporation Solid-state imaging device and imaging apparatus
US20120049305A1 (en) * 2010-08-30 2012-03-01 Sony Corporation Solid-state imaging device and electronic apparatus

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3381291B2 (ja) * 1992-02-20 2003-02-24 松下電器産業株式会社 固体撮像装置およびその製造方法
JP4725614B2 (ja) 2008-01-24 2011-07-13 ソニー株式会社 固体撮像装置
JP5558916B2 (ja) 2009-06-26 2014-07-23 キヤノン株式会社 光電変換装置の製造方法
JP2012124275A (ja) 2010-12-07 2012-06-28 Sharp Corp 固体撮像素子およびその製造方法、並びにそれを備えた電子機器
JP5709564B2 (ja) 2011-02-09 2015-04-30 キヤノン株式会社 半導体装置の製造方法
JP6095258B2 (ja) 2011-05-27 2017-03-15 キヤノン株式会社 固体撮像装置、及び固体撮像装置を用いた撮像システム
JP6296788B2 (ja) 2013-12-25 2018-03-20 キヤノン株式会社 撮像装置および撮像システム
JP6274567B2 (ja) 2014-03-14 2018-02-07 キヤノン株式会社 固体撮像装置及び撮像システム

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001144280A (ja) * 1999-11-12 2001-05-25 Sony Corp 固体撮像素子
US20090065815A1 (en) * 2007-09-11 2009-03-12 Naya Akihiko Solid-state imaging device and imaging apparatus
US20100001178A1 (en) * 2008-07-01 2010-01-07 Fujifilm Corporation Solid-state imaging device and imaging apparatus
US20120049305A1 (en) * 2010-08-30 2012-03-01 Sony Corporation Solid-state imaging device and electronic apparatus

Also Published As

Publication number Publication date
GB202002364D0 (en) 2020-04-08
JP7086558B2 (ja) 2022-06-20
JP2018078281A (ja) 2018-05-17
GB2579517A (en) 2020-06-24

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