JP7082860B2 - 光放射の検出を改善するための構造化基板および同構造化基板に関する方法 - Google Patents
光放射の検出を改善するための構造化基板および同構造化基板に関する方法 Download PDFInfo
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Description
パターン化されていない表面上の局所SPR
この例では、固体表面(DNA「クラスタ」)上の増幅DNAの蛍光強度を増大するための、局所表面プラズモン共鳴(SPR)の使用について記載する。この例において、結果は、Auナノ粒子を混ぜた、シランフリーアクリルアミド(SFA)でコーティングしたパターン化されていないガラス表面に示される。DNAクラスタはその後、この表面上で増幅した。
ナノ粒子付きパターン化基板上での増強蛍光
プラズモンナノ構造は、増強蛍光のため、パターン化ナノウェル基板と組み合わせることも可能である。この例において蛍光増強は、ナノウェル内のナノ粒子を用いて達成された。ナノ粒子は、新規のSn/Auリフローアプローチを用いて、ナノウェル内に形成した。図3Aに示すように、Sn/Auの均一フィルムをまずナノウェル基板上にコーティングし、続いて、400℃の熱アニールプロセスを実施し、小ナノ粒子へのフィルムのリフローをもたらした(図3Bおよび3C)。最初のフィルム厚さを制御することにより、ナノ粒子サイズを操作した。この実施例は図3Bおよび3Cに示し、それぞれ6nmと10nmのフィルム厚さで開始し、それぞれ、直径>50nmの粒子と、<30nmの粒子になった。
金ナノプラグ付きパターン化基板での増強蛍光
この例では、蛍光強度を、ウェルの底に付着させた金ナノプラグを用いてナノウェル内で増強した。ナノウェル62にあるAuナノプラグ60の加工を図8Aに示す。簡潔に言うと、Auをパターン化フローセル64に付着させ、各ウェル62の底および核間隙領域68にAuの層66を生じさせる。機械的研磨で間隙領域68に付着したAuを取り除き、Auプラグ60をウェル62の底のみに残す。図8Bは結果として生じるSEM画像を示す。固体金(Au)プラグはウェルの底に見られ、Auナノ粒子は壁と間隙領域に見られる。この単純な構造も、下記の配列決定実験で実証するように、クラスタの蛍光強度を増強することが可能である。
Claims (9)
- (a)複数の反応キャビティを有する平坦な表面を有し、前記複数の反応キャビティは間隙領域により互いに分離されている、固体支持体と、
(b)同一の形態を有するプラズモンナノ構造が複数配置されており、
前記のプラズモンナノ構造はプラズモン共鳴材で形成されるものであり、
各反応キャビティ内に配置され、対応する反応キャビティ内に伝播する電磁エネルギーを増幅するか、または対応する反応キャビティ内で生成される電磁エネルギーを増幅するように構成されたアンサンブル増幅器を形成する、プラズモンナノ構造であって、
前記アンサンブル増幅器を形成するプラズモンナノ構造は、それぞれ、対応するアンサンブル増幅器を形成する他のプラズモンナノ構造に対し、予め決められた位置を有し、前記プラズモンナノ構造は、ボウタイナノアンテナ、ナノロッド、ナノリング、ナノプラグ、またはナノ格子の形態を有する、プラズモンナノ構造と、
(c)前記プラズモンナノ構造を覆う層を形成するゲル材料と、
(d)前記ゲル材料に結合されるプライマー核酸と、を含む、アレイ。 - 前記プラズモンナノ構造は、金(Au)、銀(Ag)、スズ(Sn)、ロジウム(Rh)、ルテニウム(Ru)、パラジウム(Pd)、オスミウム(Os)、イリジウム(Ir)、白金(Pt)、チタン(Ti)、アルミニウム(Al)、クロム(Cr)、銅(Cu)、p型ドープシリコン、n型ドープシリコン、および、ヒ化ガリウムからなる群から選択した物質を含む、請求項1に記載のアレイ。
- (a)請求項1のアレイを提供するステップと、
(b)標的核酸のライブラリを前記ゲル材料に送達して、前記ゲル材料に核酸フィーチャのアレイを生成するステップと、
(c)前記アレイを、前記標的核酸に結合する少なくとも1つの蛍光標識プローブと接触させるステップと、
(d)前記アレイ上の蛍光シグナルを検出し、前記少なくとも1つのプローブに結合する前記標的核酸を識別するステップを含む、核酸を検出する方法。 - 前記プラズモンナノ構造は、銀、金、p型ドープシリコン、n型ドープシリコン、および、ヒ化ガリウムからなる群から選択した物質を含む、請求項3に記載の方法。
- 前記固体支持体はフローセルの表面を含む、請求項3に記載の方法。
- 前記蛍光標識プローブは蛍光標識ヌクレオチドを含む、請求項3に記載の方法。
- 検出するステップは、各フィーチャの標的核酸に対するオリゴヌクレオチドプローブのハイブリダイゼーションの検出を含む、または検出するステップは、各フィーチャの標的核酸へのヌクレオチドプローブまたはオリゴヌクレオチドプローブの導入の検出を含む、
のうち少なくとも1つを満たす、請求項3に記載の方法。 - 前記ゲル材料はヒドロゲルを含む、請求項1に記載のアレイ。
- 前記固体支持体はフローセルの表面を含む、請求項1に記載のアレイ。
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JP6402838B2 (ja) * | 2016-03-25 | 2018-10-10 | 大日本印刷株式会社 | 電磁波応答性積層体 |
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CN106062212A (zh) | 2016-10-26 |
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WO2015100373A2 (en) | 2015-07-02 |
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BR112016014923A2 (ja) | 2017-08-08 |
ES2848062T3 (es) | 2021-08-05 |
KR102475314B1 (ko) | 2022-12-06 |
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EP3778890A1 (en) | 2021-02-17 |
WO2015100373A3 (en) | 2015-08-13 |
CA2933548C (en) | 2023-07-11 |
CA3198424A1 (en) | 2015-07-02 |
EP3087181B1 (en) | 2020-12-02 |
KR20160101961A (ko) | 2016-08-26 |
KR102333635B1 (ko) | 2021-11-30 |
US20180073065A1 (en) | 2018-03-15 |
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