JP7080238B2 - 光検出器アレイのデジタルフロントエンドとのハイブリッド統合 - Google Patents
光検出器アレイのデジタルフロントエンドとのハイブリッド統合 Download PDFInfo
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- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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Description
[0001] 本出願は、2016年12月19日に出願された、米国特許出願第15/383,112号からの優先権の利益を主張し、その内容が参照により本明細書に組み込まれる。
[0024] 従来型の単一光子アバランシェ検出器(SPAD)は、70ボルト以上に逆バイアスされ得る。かかる高電圧は、従来型のCMOSプロセスが耐え得るより高い電場強度を生じ得る。そのため、従来型のSPAD装置からの光信号(photo signal)は初めに、アナログ読出し集積回路(ROIC:readout integrated circuit)を使用して、アナログ信号に変換され得る。
[0029] 図1は、実施形態例に従った、システム100を例示する。いくつかの実施形態では、システム100は、光検知測距(LIDAR)システムの光受信器部分を表し得る。すなわち、システム100は、LIDARシステムの照明器部分(例えば、レーザー)から放出された光パルスを受信するように構成され得る。
[0082] 図5は、実施形態に従った、方法500を例示する。方法500は、様々なブロックまたはステップを含み得る。ブロックまたはステップは個別に、または組み合わせて実行され得る。ブロックまたはステップは、任意の順番で、および/または連続して、もしくは並行して実行され得る。さらに、ブロックまたはステップは、省略されるか、または方法500に追加され得る。方法500のブロックは、図1、図2A、図2B、図2C、図2D、図2E、図3、図4A、図4B、および図4Cに関して例示および説明したシステム100、200、300、または回路400、440、もしくは450を形成または構成するために実行され得る。
Claims (15)
- 第1の基板であって、
複数の光検出器と、
前記複数の光検出器の各光検出器に電気的に結合されて、バイアス電圧を各光検出器に供給するように構成される、バイアス回路とを含む、第1の基板と、
第2の基板であって、
シリコンオンインシュレータ(SOI)材料と、
複数のコンデンサであって、
前記複数のコンデンサの各コンデンサは、前記複数の光検出器のそれぞれの光検出器に電気的に結合され、
各コンデンサは、前記SOI材料の埋め込み酸化層によって分離された2つの金属層を含む、複数のコンデンサと、
複数のチャネルを有する読出し回路であって、前記複数のチャネルの各チャネルは、前記複数のコンデンサのそれぞれのコンデンサを通して前記複数の光検出器のそれぞれの光検出器に容量結合される、読出し回路とを含む、第2の基板と
を備える、システム。 - 前記読出し回路は、相補型金属酸化膜半導体(CMOS)デジタル読出し集積回路(ROIC)を含む、請求項1に記載のシステム。
- 前記相補型金属酸化膜半導体(CMOS)デジタル読出し集積回路(ROIC)は、サイズが32ナノメートル未満の設計特徴を含む、請求項2に記載のシステム。
- 前記複数の光検出器は、複数の単一光子アバランシェ検出器(SPAD)を含む、請求項1に記載のシステム。
- 前記バイアス回路は受動クエンチング回路を含み、前記バイアス電圧は少なくとも70ボルトである、請求項1に記載のシステム。
- 各チャネルは、それぞれのCMOSトランジスタを含み、前記複数のコンデンサの各コンデンサは、前記それぞれのCMOSトランジスタの入力ゲート端子に電気的に結合される、請求項1に記載のシステム。
- 前記複数のコンデンサの各コンデンサのそれぞれの静電容量値は、少なくとも前記バイアス電圧および前記それぞれの入力ゲート端子における所望の入力電圧に基づいて選択される、請求項6に記載のシステム。
- 前記所望の入力電圧は5.5ボルト未満である、請求項7に記載のシステム。
- 前記複数のコンデンサは、前記第1の基板上に配置される、請求項1に記載のシステム。
- 前記システムは、光検知測距(LIDAR)システムの光受信器の少なくとも一部である、請求項1に記載のシステム。
- 第1の基板を提供することであって、前記第1の基板は、
複数の光検出器と、
前記複数の光検出器の各光検出器に電気的に結合されて、バイアス電圧を各光検出器に供給するように構成される、バイアス回路とを含む、第1の基板を提供することと、
複数のチャネルを有する読出し回路を含む第2の基板を提供することであって、前記第2の基板はシリコンオンインシュレータ(SOI)材料を含む、第2の基板を提供することと、
前記第2の基板上に複数のコンデンサを形成することであって、
前記複数のコンデンサの各コンデンサは、前記複数の光検出器のそれぞれの光検出器に電気的に結合され、
各コンデンサは、前記SOI材料の埋め込み酸化層によって分離された2つの金属層を含み、
前記複数のチャネルの各チャネルは、前記複数のコンデンサのそれぞれのコンデンサを通して前記複数の光検出器のそれぞれの光検出器に容量結合される、複数のコンデンサを形成することと、
前記第1の基板および前記第2の基板を結合することと
を含む、製造方法。 - 前記第1の基板および前記第2の基板を結合することは、融着プロセス、ウェーハボンディングプロセス、またはバンプボンディングプロセス、の少なくとも1つを含む、請求項11に記載の方法。
- 前記複数の光検出器は、複数の単一光子アバランシェ検出器(SPAD)を含む、請求項11に記載の方法。
- 前記バイアス回路は受動クエンチング回路を含み、前記バイアス電圧は少なくとも70ボルトである、請求項11に記載の方法。
- 前記読出し回路は、サイズが32ナノメートル未満の設計特徴を含む相補型金属酸化膜半導体(CMOS)デジタル読出し集積回路(ROIC)を含む、請求項11に記載の方法。
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US15/383,112 US10002986B1 (en) | 2016-12-19 | 2016-12-19 | Hybrid integration of photodetector array with digital front end |
US15/383,112 | 2016-12-19 | ||
PCT/US2017/067042 WO2018118787A1 (en) | 2016-12-19 | 2017-12-18 | Hybrid integration of photodetector array with digital front end |
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