JP7073174B2 - 透過性を有するオプティカル・カプラのアクティブ・マトリクス・アレイ - Google Patents

透過性を有するオプティカル・カプラのアクティブ・マトリクス・アレイ Download PDF

Info

Publication number
JP7073174B2
JP7073174B2 JP2018072211A JP2018072211A JP7073174B2 JP 7073174 B2 JP7073174 B2 JP 7073174B2 JP 2018072211 A JP2018072211 A JP 2018072211A JP 2018072211 A JP2018072211 A JP 2018072211A JP 7073174 B2 JP7073174 B2 JP 7073174B2
Authority
JP
Japan
Prior art keywords
light
backplane
wavelength
optical
control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018072211A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018190961A (ja
JP2018190961A5 (enExample
Inventor
ジェンピン・ルー
パトリック・ワイ・マエダ
ソーロブ・レイチャウデユーリ
デイヴィッド・ケイ・ビーゲルセン
ユージン・エム・チャウ
Original Assignee
パロ アルト リサーチ センター インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by パロ アルト リサーチ センター インコーポレイテッド filed Critical パロ アルト リサーチ センター インコーポレイテッド
Publication of JP2018190961A publication Critical patent/JP2018190961A/ja
Publication of JP2018190961A5 publication Critical patent/JP2018190961A5/ja
Application granted granted Critical
Publication of JP7073174B2 publication Critical patent/JP7073174B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G02B27/14—Beam splitting or combining systems operating by reflection only
    • G02B27/141—Beam splitting or combining systems operating by reflection only using dichroic mirrors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/20—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only
    • H04N23/21—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from infrared radiation only from near infrared [NIR] radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/60—Systems using moiré fringes

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Electroluminescent Light Sources (AREA)
JP2018072211A 2017-04-28 2018-04-04 透過性を有するオプティカル・カプラのアクティブ・マトリクス・アレイ Active JP7073174B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/582,296 US10397529B2 (en) 2017-04-28 2017-04-28 Transparent optical coupler active matrix array
US15/582,296 2017-04-28

Publications (3)

Publication Number Publication Date
JP2018190961A JP2018190961A (ja) 2018-11-29
JP2018190961A5 JP2018190961A5 (enExample) 2021-11-04
JP7073174B2 true JP7073174B2 (ja) 2022-05-23

Family

ID=61972336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018072211A Active JP7073174B2 (ja) 2017-04-28 2018-04-04 透過性を有するオプティカル・カプラのアクティブ・マトリクス・アレイ

Country Status (3)

Country Link
US (1) US10397529B2 (enExample)
EP (1) EP3401725A1 (enExample)
JP (1) JP7073174B2 (enExample)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160212510A1 (en) 2013-08-21 2016-07-21 Telefonaktiebolaget L M Erisson (Publ) Optical Switching
JP2016225612A (ja) 2015-05-29 2016-12-28 パロ アルト リサーチ センター インコーポレイテッド 薄膜オプトカプラを使用して形成されるアクティブマトリクスバックプレーン

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4779126A (en) 1983-11-25 1988-10-18 International Rectifier Corporation Optically triggered lateral thyristor with auxiliary region
JPS60193384A (ja) * 1984-03-15 1985-10-01 Toshiba Corp 光スイツチングデバイス及び光スイツチング表示装置
KR910007142A (ko) 1988-09-30 1991-04-30 미다 가쓰시게 박막 광트랜지스터와 그것을 사용한 광센서어레이
US5200634A (en) 1988-09-30 1993-04-06 Hitachi, Ltd. Thin film phototransistor and photosensor array using the same
US5264720A (en) 1989-09-22 1993-11-23 Nippondenso Co., Ltd. High withstanding voltage transistor
US5028788A (en) 1990-04-03 1991-07-02 Electromed International Ltd. X-ray sensor array
US5083175A (en) 1990-09-21 1992-01-21 Xerox Corporation Method of using offset gated gap-cell thin film device as a photosensor
JP2878137B2 (ja) 1994-06-29 1999-04-05 シャープ株式会社 増幅型光電変換素子、それを用いた増幅型固体撮像装置、及び増幅型光電変換素子の製造方法
US7038242B2 (en) 2001-02-28 2006-05-02 Agilent Technologies, Inc. Amorphous semiconductor open base phototransistor array
US6885789B2 (en) 2002-06-07 2005-04-26 Fujitsu Limited Optical switch fabricated by a thin film process
GB0401578D0 (en) 2004-01-24 2004-02-25 Koninkl Philips Electronics Nv Phototransistor
EP1679749A1 (en) 2005-01-11 2006-07-12 Ecole Polytechnique Federale De Lausanne Epfl - Sti - Imm - Lmis3 Semiconductor photodiode and method of making
KR100916321B1 (ko) 2007-12-17 2009-09-11 한국전자통신연구원 유기 발광 다이오드 터치스크린 장치 및 그 제조 방법
US20140212085A1 (en) 2013-01-29 2014-07-31 Georgios Margaritis Optocoupler
WO2015143011A1 (en) 2014-03-19 2015-09-24 Bidirectional Display Inc. Image sensor panel and method for capturing graphical information using same
US9946135B2 (en) 2015-05-29 2018-04-17 Palo Alto Research Center Incorporated High voltage thin film optical switch

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160212510A1 (en) 2013-08-21 2016-07-21 Telefonaktiebolaget L M Erisson (Publ) Optical Switching
JP2016225612A (ja) 2015-05-29 2016-12-28 パロ アルト リサーチ センター インコーポレイテッド 薄膜オプトカプラを使用して形成されるアクティブマトリクスバックプレーン

Also Published As

Publication number Publication date
JP2018190961A (ja) 2018-11-29
US20180316897A1 (en) 2018-11-01
US10397529B2 (en) 2019-08-27
EP3401725A1 (en) 2018-11-14

Similar Documents

Publication Publication Date Title
JP7549637B2 (ja) 表示装置
JP2020074544A (ja) 電子機器
JP2021136208A (ja) 発光装置、表示装置、露光システム、及び表示撮像装置
CN114551430A (zh) 显示装置
US11527580B2 (en) Semiconductor device, display imaging apparatus, photoelectric conversion apparatus, electronic device, illumination apparatus, and moving body
KR20200038853A (ko) 디스플레이 장치
US8203663B2 (en) Liquid crystal device and projector having particular concave reflective layer
CN112992976B (zh) 显示装置
TW200912428A (en) Display device driven by electric field and method for manufacturing the same
US20230217791A1 (en) Light emitting apparatus, display apparatus, image pickup apparatus, electronic apparatus, illuminating apparatus, and movable object
TWI837871B (zh) 顯示裝置
KR102754802B1 (ko) 유기발광장치, 표시장치, 광전변환장치 및 전자기기
JP7073174B2 (ja) 透過性を有するオプティカル・カプラのアクティブ・マトリクス・アレイ
TW201812729A (zh) 電子裝置、電子裝置的驅動方法
KR102841198B1 (ko) 표시 장치
CN115666187A (zh) 包括滤色器的电子装置
US12477905B2 (en) Light emitting device, manufacturing method thereof, display device, photoelectric conversion device, electronic apparatus, illumination device, and moving body
CN112018150A (zh) 显示装置
TWI483226B (zh) 顯示面板
CN118284211A (zh) 显示装置
CN116249386A (zh) 电子装置
CN109637389B (zh) 显示面板及其控制方法和显示装置
KR102526061B1 (ko) 전기적 광량 조절 장치, 이 장치를 포함하는 카메라 모듈 및 이 모듈을 포함하는 모바일 기기
US20250241111A1 (en) Light emitting device, display device, photoelectric conversion device, electronic apparatus, and wearable device
TWI843380B (zh) 圖像採集裝置、圖像採集方法及電子裝置

Legal Events

Date Code Title Description
RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20180416

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20180417

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20210402

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210924

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20210924

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20211213

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220121

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20220411

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20220511

R150 Certificate of patent or registration of utility model

Ref document number: 7073174

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250